My research focuses on the physics and reliability of gallium nitride (GaN) power devices, with particular expertise in defect characterization using deep-level transient spectroscopy (DLTS). I investigate defect formation mechanisms, the electrical behavior of defects, and their effects on device performance and reliability. My work spans fundamental and applied research on highly reliable GaN power devices for power electronics and extreme-environment applications.

1.DLTS and Defect Physics in Wide-Bandgap Semiconductors

High-precision characterization of defects in GaN under coupled physical fields, and mechanisms of defect-induced dynamic degradation and device failure.

2.Design and Optimization of GaN Power Devices

High-voltage normally-off metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), ultrathin-barrier device structures, and gate stability.

3.GaN Electronics for Extreme Environments

GaN device reliability at cryogenic temperatures and under space radiation, and radiation-hardening technologies.

I have led national research projects supported by the National Natural Science Foundation of China and major programs of the Ministry of Industry and Information Technology. My publications as a first or corresponding author have appeared in leading journals and conference proceedings, including Nature Communications, the IEEE International Electron Devices Meeting (IEDM), IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, and the International Symposium on Power Semiconductor Devices and ICs (ISPSD).

September 2019 – July 2022

Ph.D. in Engineering, Institute of Microelectronics, Chinese Academy of Sciences

September 2016 – July 2019

M.Eng. in Integrated Circuit Engineering, Peking University

September 2012 – July 2016

B.Eng., University of Electronic Science and Technology of China

January 2026 – Present

Associate Researcher, Institute of Microelectronics, Chinese Academy of Sciences

August 2022 – January 2026

Assistant Researcher, Institute of Microelectronics, Chinese Academy of Sciences

Journal Articles

1. J. Chen, R. Jia, J. An, C. Chang, M. Zhang, Y. Yao, S. Huang, C. Lin, X. Li. Boron diffusion buffer layer for defect suppression in Si PIN radiation detectors. Materials Science in Semiconductor Processing, published online September 24, 2026. DOI 10.1016/j.mssp.2026.111198.

2. Y. Yang, S. Huang, X. Fu, F. Guo, Y. Yao, K. Deng, J. Liu, X. Wang, X. Gao, K. Wei, X. Liu, X. Yang, B. Shen. Fabrication and properties of slanted-channel GaN-based p-type transistors via regrown heterostructure. Acta Physica Sinica, 75(8), 080805 (2026). DOI 10.7498/aps.75.20260336. In Chinese.

3. M. Wang, Y. Yao, S. Huang, K. Wei, X. Wang, X. Liu, Y. Lv, H. Zhou, C. Liu, P. Cui, Z. Lin, K. J. Chen. Gate-width scaling modulates electron velocity in AlGaN/GaN HEMTs. Applied Physics Letters, 128(22), 222104 (2026). DOI 10.1063/5.0336233.

4. J. Yuan, B. Guo, Y. Yao, C. Zhang, Y. Luo, L. Cen, K. Wei, Y. Li, S. Huang, X. Chen. PEALD-AlON passivated GaN-on-Si millimeter-wave MIS-HEMTs with low noise and high linearity. Microelectronic Engineering, 305, 112471 (2026). DOI 10.1016/j.mee.2026.112471.

5. C. Zhang, Y. Yao, S. Huang, X. Wang, L. Yu, H. Qian, Y. Pei, K. Wei, X. Liu. Spatially resolved I-DLTS mapping of hole migration induced traps in AlGaN/GaN HEMTs. Journal of Physics D: Applied Physics, 59(29), 295105 (2026). DOI 10.1088/1361-6463/ae8707.

6. C. Zhang, Y. Yao, S. Huang, L. Yu, H. Qian, Y. Pei, Q. Jiang, Z. Zhang, K. Wei, X. Wang, X. Liu. Structural design of GaN MIS-HEMTs for low-Earth-orbit radiation hardness: integrating back-barrier and deep source via. IEEE Transactions on Electron Devices, 73(9), 5335-5341 (2026). DOI 10.1109/ted.2026.3712325.

7. Y. Yao, S. Huang, R. Cao, Z. Zhang, X. Wang, Q. Jiang, J. Shi, C. Zhang, J. Liu, K. Wei, Y. Pei, H. Zhang, H. Qian, F. Guo, G. Li, N. Tang, J. W. Luo, W. Ge, X. Liu, B. Shen, K. J. Chen. Dislocation-assisted electron and hole transport in GaN epitaxial layers. Nature Communications, 16(1), 6448 (2025). DOI 10.1038/s41467-025-61510-w.

8. P. Li, J. Chen, Y. Yao, Y. Zheng. First-principles study on the influencing mechanisms of different strain fields on the electronic properties of diamond. Research & Progress of Solid State Electronics, 45(4), 402-408 (2025). DOI 10.12450/j.gtdzx.202504002. In Chinese.

9. Y. Yao, S. Huang, Q. Jiang, X. Wang, Y. Huang, Y. Pei, H. Qian, H. Zhang, F. Guo, B. Shen, X. Liu. Rapid detection of capture and emission processes in surface and buffer traps: understanding dynamic degradation in GaN power devices. Power Electronic Devices and Components, 8, 100065 (2024). DOI 10.1016/j.pedc.2024.100065.

10. K. Deng, S. Huang, X. Wang, Y. Yao, Y. Yang, L. Yu, Y. Pei, J. An, Q. Jiang, X. Liu, S. Yang, K. J. Chen. Deep level transient spectroscopy: tracing interface and bulk trap-induced degradation in AlGaN/GaN-heterostructure based devices. Information & Functional Materials, 1(3), 282-303 (2024). DOI 10.1002/ifm2.27.

11. L. Wang, S. Huang, Q. Jiang, X. Wang, Y. Wang, Y. Yao, J. Shi, J. Fan, H. Yin, K. Wei, X. Liu. High threshold voltage stability enhancement-mode GaN p-FETs fabricated with PEALD-AlN gate interfacial layer. IEEE Electron Device Letters, 45(3), 320-323 (2024). DOI 10.1109/led.2024.3354935.

12. J. Yuan, G. J. Jing, J. C. Wang, L. Wang, R. H. Gao, Y. C. Zhang, Y. X. Yao, K. Wei, Y. K. Li, X. J. Chen. High-performance MOCVD-SiNx/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves. Journal of Infrared and Millimeter Waves, 43(2), 199-205 (2024). DOI 10.11972/j.issn.1001-9014.2024.02.009. In Chinese.

13. Y. Huang, Q. Jiang, Y. Yao, S. Huang, X. Wang, X. Liu. Investigation of dynamic Eoss in p-GaN gate AlGaN/GaN HEMT. IEEE Electron Device Letters, 45(12), 2339-2342 (2024). DOI 10.1109/led.2024.3477605.

14. S. Huang, X. Wang, Y. Yao, K. Deng, Y. Yang, Q. Jiang, X. Liu, F. Guo, B. Shen, K. J. Chen, Y. Hao. Threshold voltage instability in III-nitride heterostructure metal-insulator-semiconductor high-electron-mobility transistors: characterization and interface engineering. Applied Physics Reviews, 11(2), 021325 (2024). DOI 10.1063/5.0179376.

15. T. Luan, Q. Jiang, S. Huang, X. Wang, H. Jin, F. Guo, Y. Yao, J. Fan, H. Yin, K. Wei, Y. Li, H. Jiang, J. Li, X. Liu. Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures. Microelectronic Engineering, 269, 111916 (2023). DOI 10.1016/j.mee.2022.111916.

16. Y. Yao, S. Huang, Q. Jiang, X. Wang, L. Bi, W. Shi, F. Guo, T. Luan, J. Fan, H. Yin, K. Wei, Y. Zheng, J. Shi, Y. Li, Q. Sun, X. Liu. Identification of semi-ON-state current collapse in AlGaN/GaN HEMTs by drain current deep level transient spectroscopy. IEEE Electron Device Letters, 43(2), 200-203 (2022). DOI 10.1109/led.2021.3135900.

17. M. Li, S. Huang, X. Wang, F. Guo, Y. Yao, J. Shi, K. Wei, X. Liu. Evolution of deep traps in GaN-based RF high electron mobility transistors under high voltage OFF-state stress. physica status solidi (RRL) - Rapid Research Letters, 16(4), 2100539 (2022). DOI 10.1002/pssr.202100539.

18. L. Bi, Y. Yao, Q. Jiang, S. Huang, X. Wang, H. Jin, X. Dai, Z. Xu, J. Fan, H. Yin, K. Wei, X. Liu. Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs. Journal of Semiconductors, 43(3), 032801 (2022). DOI 10.1088/1674-4926/43/3/032801.

19. Y. Yao, Q. Jiang, S. Huang, X. Wang, X. Luo, H. Jin, F. Guo, H. Yin, J. Shi, H. Jiang, J. Li, W. Wang, B. Shen, K. Wei, X. Liu. Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy. Applied Physics Letters, 119(23), 233502 (2021). DOI 10.1063/5.0078367.

20. W. Shi, Q. Jiang, T. Luan, S. Huang, X. Wang, F. Guo, Y. Yao, K. Deng, L. Bi, J. Fan, H. Yin, K. Wei, W. Xiong, Y. Li, H. Jiang, J. Li, X. Liu. Implementation of RTCVD-SiNx gate dielectric into enhancement-mode GaN MIS-HEMTs fabricated on ultrathin-barrier AlGaN/GaN-on-Si platform. IEEE Transactions on Electron Devices, 68(9), 4274-4277 (2021). DOI 10.1109/ted.2021.3088771.

21. W. Shi, S. Huang, X. Wang, Q. Jiang, Y. Yao, L. Bi, Y. Li, K. Deng, J. Fan, H. Yin, K. Wei, Y. Li, J. Shi, H. Jiang, J. Li, X. Liu. Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess. Journal of Semiconductors, 42(9), 092801 (2021). DOI 10.1088/1674-4926/42/9/092801.

22. J. Liu, Y. Yao. Modeling and analysis of wireless cyberphysical systems using stochastic methods. Wireless Communications and Mobile Computing, 2019, 1-17 (2019). DOI 10.1155/2019/3217625.

Conference Proceedings Papers

1. M. Wang, Y. Yao, J. Zhou, K. Wei, X. Wang, X. Liu, G. Yang, S. Chen, L. Li, S. Huang. Bridging the defect-to-device gap: experimentally resolved multielectron trapping enables field-temperature Monte Carlo leakage prediction. Accepted for oral presentation at the 2026 IEEE International Electron Devices Meeting, San Francisco, 12-16 December 2026. Paper 1020, Session 34-5.

2. K. Zhang, H. Zhou, Q. Lyu, N. Zhang, C. Zhang, J. Liu, Y. Yao, C. Wang, M. Zhou, Z. Liu, S. Huang, Y. Pei, Y. Hao, J. Zhang. AlN buffered K/Ku bands GaN RF power HEMTs with in-situ SiN silicidation enabled low RC = 0.03 Ω·mm at 500 K and record high Pout = 25 W/mm. IEEE/JSAP Symposium on VLSI Technology and Circuits, 1-3 (2026). DOI 10.1109/vlsitechnologyandcir65830.2026.11577592.

3. T. Luan, S. Huang, Y. Yao, Q. Jiang, Y. Wang, Y. Huang, C. Feng, X. Wang, X. Liu, R. Wang, Y. Ren, W. Cheng, H. Liang. 700 V/2.5 A normally-off ultrathin-barrier AlGaN(<6nm)/GaN MIS-HEMTs with improved gate overdrive window and PBTI. 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 103-106 (2023). DOI 10.1109/ispsd57135.2023.10147548.

4. Y. Yao, Q. Jiang, S. Huang, X. Wang, H. Jin, X. Dai, J. Fan, H. Yin, K. Wei, X. Liu. Dynamic-QGD of enhancement-mode AlGaN/GaN MIS-HEMTs induced by bulk/interface states in SiNx passivation dielectric. 19th China International Forum on Solid State Lighting and 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA/IFWS), 87-91 (2022). DOI 10.1109/sslchinaifws57942.2023.10071109.

5. Y. Yao, Q. Jiang, S. Huang, X. Wang, L. Bi, H. Jin, X. Dai, Y. Huang, J. Fan, K. Wei, J. Xiang, H. Jiang, J. Li, W. Wang, X. Liu. Investigation of dynamic-QGD on enhancement-mode AlGaN/GaN MIS-HEMTs with SiNx passivation dielectric. 34th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 77-80 (2022). DOI 10.1109/ispsd49238.2022.9813604.

I welcome applications to the academic master's program in Microelectronics and Solid-State Electronics and the professional master's program in Electronic Information. Students interested in GaN power devices, defect physics, and device reliability are encouraged to contact me to discuss research opportunities and applications.