电子邮件： yaoyixu@ime.ac.cn
通信地址： 北京市朝阳区北土城西路3号
邮政编码： 100029
招生信息
招生专业
招生方向
招生专业
招生方向
研究领域
本人主要从事氮化镓（GaN）功率器件物理与可靠性研究，以深能级瞬态谱（DLTS）缺陷表征技术为核心特色，聚焦GaN器件缺陷的产生机制、电学行为及其对器件性能与可靠性的影响，面向极端环境、功率电子等需求，开展高可靠GaN功率器件的基础与应用研究。
研究方向
1. DLTS与宽禁带半导体缺陷物理：多场耦合下GaN缺陷高精度表征，缺陷诱导器件动态退化与失效机理
2. GaN功率器件设计与优化：高压常关型MIS-HEMT、超薄势垒器件结构与栅极稳定性
3. 极端环境GaN电子技术：极端低温、空间辐照下GaN器件可靠性与抗辐照技术
主持国家自然科学基金、工信部重大专项等国家级项目，成果以一作/通讯身份发表于 Nature Communications、IEDM、IEEE EDL、TED、APL、ISPSD 等顶级期刊会议。
招生信息
招收微电子学与固体电子学学术硕士、电子信息专业硕士，欢迎对 GaN 功率器件、缺陷物理与可靠性感兴趣的同学联系报考。
招生专业
招生方向
招生专业
招生方向
教育背景
教育背景
工作经历
工作简历
工作经历
工作简历
出版信息
科研活动
出版信息
Journal Articles
1. J. Chen, R. Jia, J. An, C. Chang, M. Zhang, Y. Yao, S. Huang, C. Lin, X. Li. Boron diffusion buffer layer for defect suppression in Si PIN radiation detectors. Materials Science in Semiconductor Processing, published online September 24, 2026. DOI 10.1016/j.mssp.2026.111198.
2. Y. Yang, S. Huang, X. Fu, F. Guo, Y. Yao, K. Deng, J. Liu, X. Wang, X. Gao, K. Wei, X. Liu, X. Yang, B. Shen. Fabrication and properties of slanted-channel GaN-based p-type transistors via regrown heterostructure. Acta Physica Sinica, 75(8), 080805 (2026). DOI 10.7498/aps.75.20260336. In Chinese.
3. M. Wang, Y. Yao, S. Huang, K. Wei, X. Wang, X. Liu, Y. Lv, H. Zhou, C. Liu, P. Cui, Z. Lin, K. J. Chen. Gate-width scaling modulates electron velocity in AlGaN/GaN HEMTs. Applied Physics Letters, 128(22), 222104 (2026). DOI 10.1063/5.0336233.
4. J. Yuan, B. Guo, Y. Yao, C. Zhang, Y. Luo, L. Cen, K. Wei, Y. Li, S. Huang, X. Chen. PEALD-AlON passivated GaN-on-Si millimeter-wave MIS-HEMTs with low noise and high linearity. Microelectronic Engineering, 305, 112471 (2026). DOI 10.1016/j.mee.2026.112471.
5. C. Zhang, Y. Yao, S. Huang, X. Wang, L. Yu, H. Qian, Y. Pei, K. Wei, X. Liu. Spatially resolved I-DLTS mapping of hole migration induced traps in AlGaN/GaN HEMTs. Journal of Physics D: Applied Physics, 59(29), 295105 (2026). DOI 10.1088/1361-6463/ae8707.
6. C. Zhang, Y. Yao, S. Huang, L. Yu, H. Qian, Y. Pei, Q. Jiang, Z. Zhang, K. Wei, X. Wang, X. Liu. Structural design of GaN MIS-HEMTs for low-Earth-orbit radiation hardness: integrating back-barrier and deep source via. IEEE Transactions on Electron Devices, 73(9), 5335-5341 (2026). DOI 10.1109/ted.2026.3712325.
7. Y. Yao, S. Huang, R. Cao, Z. Zhang, X. Wang, Q. Jiang, J. Shi, C. Zhang, J. Liu, K. Wei, Y. Pei, H. Zhang, H. Qian, F. Guo, G. Li, N. Tang, J. W. Luo, W. Ge, X. Liu, B. Shen, K. J. Chen. Dislocation-assisted electron and hole transport in GaN epitaxial layers. Nature Communications, 16(1), 6448 (2025). DOI 10.1038/s41467-025-61510-w.
8. P. Li, J. Chen, Y. Yao, Y. Zheng. First-principles study on the influencing mechanisms of different strain fields on the electronic properties of diamond. Research & Progress of Solid State Electronics, 45(4), 402-408 (2025). DOI 10.12450/j.gtdzx.202504002. In Chinese.
9. Y. Yao, S. Huang, Q. Jiang, X. Wang, Y. Huang, Y. Pei, H. Qian, H. Zhang, F. Guo, B. Shen, X. Liu. Rapid detection of capture and emission processes in surface and buffer traps: understanding dynamic degradation in GaN power devices. Power Electronic Devices and Components, 8, 100065 (2024). DOI 10.1016/j.pedc.2024.100065.
10. K. Deng, S. Huang, X. Wang, Y. Yao, Y. Yang, L. Yu, Y. Pei, J. An, Q. Jiang, X. Liu, S. Yang, K. J. Chen. Deep level transient spectroscopy: tracing interface and bulk trap-induced degradation in AlGaN/GaN-heterostructure based devices. Information & Functional Materials, 1(3), 282-303 (2024). DOI 10.1002/ifm2.27.
11. L. Wang, S. Huang, Q. Jiang, X. Wang, Y. Wang, Y. Yao, J. Shi, J. Fan, H. Yin, K. Wei, X. Liu. High threshold voltage stability enhancement-mode GaN p-FETs fabricated with PEALD-AlN gate interfacial layer. IEEE Electron Device Letters, 45(3), 320-323 (2024). DOI 10.1109/led.2024.3354935.
12. J. Yuan, G. J. Jing, J. C. Wang, L. Wang, R. H. Gao, Y. C. Zhang, Y. X. Yao, K. Wei, Y. K. Li, X. J. Chen. High-performance MOCVD-SiNx/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves. Journal of Infrared and Millimeter Waves, 43(2), 199-205 (2024). DOI 10.11972/j.issn.1001-9014.2024.02.009. In Chinese.
13. Y. Huang, Q. Jiang, Y. Yao, S. Huang, X. Wang, X. Liu. Investigation of dynamic Eoss in p-GaN gate AlGaN/GaN HEMT. IEEE Electron Device Letters, 45(12), 2339-2342 (2024). DOI 10.1109/led.2024.3477605.
14. S. Huang, X. Wang, Y. Yao, K. Deng, Y. Yang, Q. Jiang, X. Liu, F. Guo, B. Shen, K. J. Chen, Y. Hao. Threshold voltage instability in III-nitride heterostructure metal-insulator-semiconductor high-electron-mobility transistors: characterization and interface engineering. Applied Physics Reviews, 11(2), 021325 (2024). DOI 10.1063/5.0179376.
15. T. Luan, Q. Jiang, S. Huang, X. Wang, H. Jin, F. Guo, Y. Yao, J. Fan, H. Yin, K. Wei, Y. Li, H. Jiang, J. Li, X. Liu. Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures. Microelectronic Engineering, 269, 111916 (2023). DOI 10.1016/j.mee.2022.111916.
16. Y. Yao, S. Huang, Q. Jiang, X. Wang, L. Bi, W. Shi, F. Guo, T. Luan, J. Fan, H. Yin, K. Wei, Y. Zheng, J. Shi, Y. Li, Q. Sun, X. Liu. Identification of semi-ON-state current collapse in AlGaN/GaN HEMTs by drain current deep level transient spectroscopy. IEEE Electron Device Letters, 43(2), 200-203 (2022). DOI 10.1109/led.2021.3135900.
17. M. Li, S. Huang, X. Wang, F. Guo, Y. Yao, J. Shi, K. Wei, X. Liu. Evolution of deep traps in GaN-based RF high electron mobility transistors under high voltage OFF-state stress. physica status solidi (RRL) - Rapid Research Letters, 16(4), 2100539 (2022). DOI 10.1002/pssr.202100539.
18. L. Bi, Y. Yao, Q. Jiang, S. Huang, X. Wang, H. Jin, X. Dai, Z. Xu, J. Fan, H. Yin, K. Wei, X. Liu. Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs. Journal of Semiconductors, 43(3), 032801 (2022). DOI 10.1088/1674-4926/43/3/032801.
19. Y. Yao, Q. Jiang, S. Huang, X. Wang, X. Luo, H. Jin, F. Guo, H. Yin, J. Shi, H. Jiang, J. Li, W. Wang, B. Shen, K. Wei, X. Liu. Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy. Applied Physics Letters, 119(23), 233502 (2021). DOI 10.1063/5.0078367.
20. W. Shi, Q. Jiang, T. Luan, S. Huang, X. Wang, F. Guo, Y. Yao, K. Deng, L. Bi, J. Fan, H. Yin, K. Wei, W. Xiong, Y. Li, H. Jiang, J. Li, X. Liu. Implementation of RTCVD-SiNx gate dielectric into enhancement-mode GaN MIS-HEMTs fabricated on ultrathin-barrier AlGaN/GaN-on-Si platform. IEEE Transactions on Electron Devices, 68(9), 4274-4277 (2021). DOI 10.1109/ted.2021.3088771.
21. W. Shi, S. Huang, X. Wang, Q. Jiang, Y. Yao, L. Bi, Y. Li, K. Deng, J. Fan, H. Yin, K. Wei, Y. Li, J. Shi, H. Jiang, J. Li, X. Liu. Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess. Journal of Semiconductors, 42(9), 092801 (2021). DOI 10.1088/1674-4926/42/9/092801.
22. J. Liu, Y. Yao. Modeling and analysis of wireless cyberphysical systems using stochastic methods. Wireless Communications and Mobile Computing, 2019, 1-17 (2019). DOI 10.1155/2019/3217625.
Conference Proceedings Papers
1. M. Wang, Y. Yao, J. Zhou, K. Wei, X. Wang, X. Liu, G. Yang, S. Chen, L. Li, S. Huang. Bridging the defect-to-device gap: experimentally resolved multielectron trapping enables field-temperature Monte Carlo leakage prediction. Accepted for oral presentation at the 2026 IEEE International Electron Devices Meeting, San Francisco, 12-16 December 2026. Paper 1020, Session 34-5.
2. K. Zhang, H. Zhou, Q. Lyu, N. Zhang, C. Zhang, J. Liu, Y. Yao, C. Wang, M. Zhou, Z. Liu, S. Huang, Y. Pei, Y. Hao, J. Zhang. AlN buffered K/Ku bands GaN RF power HEMTs with in-situ SiN silicidation enabled low RC = 0.03 Ω·mm at 500 K and record high Pout = 25 W/mm. IEEE/JSAP Symposium on VLSI Technology and Circuits, 1-3 (2026). DOI 10.1109/vlsitechnologyandcir65830.2026.11577592.
3. T. Luan, S. Huang, Y. Yao, Q. Jiang, Y. Wang, Y. Huang, C. Feng, X. Wang, X. Liu, R. Wang, Y. Ren, W. Cheng, H. Liang. 700 V/2.5 A normally-off ultrathin-barrier AlGaN(<6nm)/GaN MIS-HEMTs with improved gate overdrive window and PBTI. 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 103-106 (2023). DOI 10.1109/ispsd57135.2023.10147548.
4. Y. Yao, Q. Jiang, S. Huang, X. Wang, H. Jin, X. Dai, J. Fan, H. Yin, K. Wei, X. Liu. Dynamic-QGD of enhancement-mode AlGaN/GaN MIS-HEMTs induced by bulk/interface states in SiNx passivation dielectric. 19th China International Forum on Solid State Lighting and 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA/IFWS), 87-91 (2022). DOI 10.1109/sslchinaifws57942.2023.10071109.
5. Y. Yao, Q. Jiang, S. Huang, X. Wang, L. Bi, H. Jin, X. Dai, Y. Huang, J. Fan, K. Wei, J. Xiang, H. Jiang, J. Li, W. Wang, X. Liu. Investigation of dynamic-QGD on enhancement-mode AlGaN/GaN MIS-HEMTs with SiNx passivation dielectric. 34th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 77-80 (2022). DOI 10.1109/ispsd49238.2022.9813604.