基本信息

陈涌海 男 博导 半导体研究所
电子邮件:yhchen@semi.ac.cn 
电        话:010-82304815
通信地址:北京市海淀区清华东路甲35号
邮政编码:100083

教育背景

   
学历
1990年在北京大学获得学士学位,1993年在北京科技大学获得硕士学位,1998年在中科院半导体所获得博士学位,多次前往香港科技大学进行合作研究。
学位
-- 博士

教授课程

半导体光学

出版信息

   
部分发表论文
[1] 林兰英. 高纯外延GaAs中浅施主杂质的光热电离谱研究. 半导体学报. [[[1997]]], [[[18]]]([[[4]]]): [[[246]]]-[[[252]]], http://lib.cqvip.com/Qikan/Article/Detail?id=2463262.0.
[2] 陈涌海. Anomalous circular photogalvanic effect in p-GaAs. Optics Express. 2021, [3] Yu, Jinling, Zhuang, Hang, Zhu, Kejing, Chen, Yonghai, Liu, Yu, Zhang, Yang, Yin, Chunming, Cheng, Shuying, Lai, Yunfeng, He, Ke, Xue, Qikun. Observation of current-induced spin polarization in the topological insulator Bi2Te3 via circularly polarized photoconductive differential current. PHYSICAL REVIEW B[J]. 2021, 104(4): http://dx.doi.org/10.1103/PhysRevB.104.045428.
[4] Zhuang, Hang, Yu, Jinling, Chen, Lei, Gu, Peng, Chen, Yonghai, Liu, Yu, Yin, Chunming, Lai, Yunfeng, Cheng, Shuying. Giant circular photogalvanic effect of the surface states in an ultra-thin Bi2Se3 nanoplate grown by chemical vapor deposition. JOURNAL OF APPLIED PHYSICS[J]. 2021, 129(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000629692300001.
[5] Chen, Shenzhong, Yu, Jinling, Zhu, Kejing, Zeng, Xiaolin, Chen, Yonghai, Liu, Yu, Zhang, Yang, Cheng, Shuying, He, Ke. In-plane magnetic field induced helicity dependent photogalvanic effect on the surface states of topological insulators (BixSb1-x)(2)Te-3. JOURNAL OF APPLIED PHYSICS[J]. 2021, 130(8): [6] Sun, Yang, Yang, Cheng, Li, Qicong, Liu, Kong, Xue, Xiaodi, Zhang, Yang, Azam, Muhammad, Ren, Kuankuan, Chen, Yonghai, Wang, Zhijie, Qu, Shengchun, Wang, Zhanguo. The route and optimization of charge transport in ternary organic solar cells based on O6T-4F and PC71BM as acceptors. JOURNAL OF POWER SOURCES[J]. 2020, 449: http://dx.doi.org/10.1016/j.jpowsour.2019.227583.
[7] Zhang, Yang, Liu, Yu, Zeng, Xiao Lin, Wu, Jing, Yu, Jin Ling, Chen, Yong Hai. Distinguishing the inverse spin Hall effect photocurrent of electrons and holes by comparing to the classical Hall effect. OPTICS EXPRESS[J]. 2020, 28(6): 8331-8340, https://www.webofscience.com/wos/woscc/full-record/WOS:000522511600048.
[8] Yang, Cheng, Sun, Yang, Li, Qicong, Liu, Kong, Xue, Xiaodi, Huang, Yanbin, Ren, Kuankuan, Li, Long, Chen, Yonghai, Wang, Zhijie, Qu, Shengchun, Wang, Zhanguo. Nonfullerene Ternary Organic Solar Cell with Effective Charge Transfer between Two Acceptors. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2020, 11(3): 927-934, https://www.webofscience.com/wos/woscc/full-record/WOS:000512223400050.
[9] Yu, Jinling, Wu, Wenyi, Wang, Yumeng, Zhu, Kejing, Zeng, Xiaolin, Chen, Yonghai, Liu, Yu, Yin, Chunming, Cheng, Shuying, Lai, Yunfeng, He, Ke, Xue, Qikun. Giant photoinduced anomalous Hall effect of the topological surface states in three dimensional topological insulators Bi2Te3. APPLIED PHYSICS LETTERS[J]. 2020, 116(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000526892600004.
[10] Yu, Jinling, Xia, Lijia, Zhu, Kejing, Pan, Qinggao, Zeng, Xiaolin, Chen, Yonghai, Liu, Yu, Yin, Chunming, Cheng, Shuying, Lai, Yunfeng, He, Ke, Xue, Qikun. Control of Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi2Te3 via Spin Injection. ACS APPLIED MATERIALS & INTERFACES[J]. 2020, 12(15): 18091-18100, https://www.webofscience.com/wos/woscc/full-record/WOS:000526330900098.
[11] Zhang, Yang, Wang, Yu, Liu, Yu, Zeng, XiaoLin, Wu, Jing, Yu, JinLing, Chen, YongHai. Inverse spin Hall photocurrent in thin-film MoTe2. APPLIED PHYSICS LETTERS[J]. 2020, 116(22): https://www.webofscience.com/wos/woscc/full-record/WOS:000538171800002.
[12] Li, Qicong, Sun, Yang, Xue, Xiaodi, Yue, Shizhong, Liu, Kong, Azam, Muhammad, Yang, Cheng, Wang, Zhijie, Tan, Furui, Chen, Yonghai. Insights into Charge Separation and Transport in Ternary Polymer Solar Cells. ACS APPLIED MATERIALS & INTERFACES[J]. 2019, 11(3): 3299-3307, https://www.webofscience.com/wos/woscc/full-record/WOS:000457067300084.
[13] Wang, Y M, Yu, J L, Zeng, X L, Chen, Y H, Liu, Y, Cheng, S Y, Lai, Y F, Yin, C M, He, K, Xue, Q K. Temperature and excitation wavelength dependence of circular and linear photogalvanic effect in a three dimensional topological insulator Bi2Se3. JOURNAL OF PHYSICS-CONDENSED MATTER[J]. 2019, 31(41): [14] Xue, Xiaodi, Zhu, Laipan, Huang, Wei, Marie, Xavier, Renucci, Pierre, Liu, Yu, Zhang, Yang, Zeng, Xiaolin, Wu, Jing, Xu, Bo, Wang, Zhanguo, Chen, Yonghai, Zhang, Weifeng, Lu, Yuan. Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors. PHYSICAL REVIEW B[J]. 2019, 100(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000477892000004.
[15] Li, Yuan, Liu, Fengqi, Ye, Xiaoling, Liu, Yu, Wang, Jiawei, Chen, Yonghai. Quantitative investigation of intrinsic shear strain and asymmetric interface conditions in semiconductor superlattices. JOURNAL OF APPLIED PHYSICS[J]. 2019, 126(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000481451900025.
[16] Xue, Xiaodi, Liu, Yu, Zhu, Laipan, Huang, Wei, Zhang, Yang, Zeng, Xiaolin, Wu, Jing, Xu, Bo, Wang, Zhanguo, Chen, Yonghai, Zhang, Weifeng. Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells. CHINESE PHYSICS LETTERS[J]. 2019, 36(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000475395200019.
[17] Yu, Jinling, Zhu, Kejing, Zeng, Xiaolin, Chen, Lei, Chen, Yonghai, Liu, Yu, Yin, Chunming, Cheng, Shuying, Lai, Yunfeng, Huang, Jin, He, Ke, Xue, Qikun. Helicity-dependent photocurrent of the top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators Sb2Te3. PHYSICAL REVIEW B[J]. 2019, 100(23): https://www.webofscience.com/wos/woscc/full-record/WOS:000501347400002.
[18] 陈涌海. Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells. Chinese Physics Letters. 2019, [19] Yu, Jinling, Zeng, Xiaolin, Wang, Yumeng, Xia, Lijia, Cheng, Shuying, Chen, Yonghai, Liu, Yu, Lai, Yunfeng, Zheng, Qiao. Observation of Extrinsic Photo-Induced Inverse Spin Hall Effect in a GaAs/AlGaAs Two-Dimensional Electron Gas. NANOSCALE RESEARCH LETTERS[J]. 2018, 13(1): https://doaj.org/article/bb1c2876953f49769e8544ed251e15c8.
[20] Huang, Wei, Yue, Shizhong, Liu, Yu, Zhu, Laipan, Jin, Peng, Wu, Qing, Zhang, Yang, Chen, Yanan, Liu, Kong, Liang, Ping, Qu, Shengchun, Wang, Zhijie, Chen, Yonghai. Observation of Unusual Optical Band Structure of CH3NH3PbI3 Perovskite Single Crystal. ACS PHOTONICS[J]. 2018, 5(4): 1583-1590, https://www.webofscience.com/wos/woscc/full-record/WOS:000430642500055.
[21] Huang Wei, Liu Yu, Yue ShiZhong, Zhu LaiPan, Jin Peng, Wu Qing, Zhang Yang, Qu ShengChun, Wang ZhiJie, Chen YongHai. Optical bandgap energy of CH3NH3PbI3 perovskite studied by photoconductivity and reflectance spectroscopy. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2018, 61(6): 886-892, http://lib.cqvip.com/Qikan/Article/Detail?id=74698871504849564854484857.
[22] Jia, Caihong, Ren, Yong, Yang, Guang, Li, Jiachen, Chen, Yonghai, Zhang, Weifeng. Asymmetric resistive switching effect in ZnO/Nb:SrTiO3 heterojunctions. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2018, 124(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000424515500085.
[23] Zhang, Yang, Liu, Yu, Huang, Wei, Xue, XiaoDi, Chen, YongHai, Wang, ZhanGuo. The Mapping of Spin Photocurrent in In0.15Ga0.85As/Al0.3Ga0.7As Multiple Quantum Wells. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 18(11): 7613-7616, https://www.webofscience.com/wos/woscc/full-record/WOS:000443946600052.
[24] Xue, Xiaodi, Huang, Wei, Zhu, Laipan, Zhang, Yang, Lu, Yuan, Liu, Yu, Chen, Yonghai, Wang, Zhanguo. Angular Dependence of the Spin Photocurrent in a Spin Light Emitting Diode. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 18(11): 7573-7577, https://www.webofscience.com/wos/woscc/full-record/WOS:000443946600044.
[25] Tian Yu, Shuman Liu, Jinchuan Zhang, Bo Xu, Lijun Wang, Junqi Liu, Ning Zhuo, Shenqiang Zhai, Xiaoling Ye, Yonghai Chen, Fengqi Liu, Zhanguo Wang. InAs-based interband cascade lasers at 4.0 μm operating at room temperature. 半导体学报(英文版)[J]. 2018, 39(11): 36-39, http://lib.cqvip.com/Qikan/Article/Detail?id=676666949.
[26] Zheng, Xiantong, Huang, Wei, Liang, Hongwei, Wang, Ping, Liu, Yu, Chen, Zhaoying, Liang, Ping, Li, Mo, Zhang, Jian, Chen, Yonghai, Wang, Xinqiang. Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 18(11): 7468-7472, https://www.webofscience.com/wos/woscc/full-record/WOS:000443946600023.
[27] Jia, Caihong, Li, Jiachen, Yang, Guang, Chen, Yonghai, Zhang, Weifeng. Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions. NANOSCALE RESEARCH LETTERS[J]. 2018, 13(1): https://doaj.org/article/479ec0543d0f483c837259e85b2ce08a.
[28] Yu, Jinling, Zeng, Xiaolin, Zhang, Liguo, Yin, Chunming, Chen, Yonghai, Liu, Yu, Cheng, Shuying, Lai, Yunfeng, He, Ke, Xue, Qikun. Inverse spin Hall effect induced by linearly polarized light in the topological insulator Bi2Se3. OPTICS EXPRESS[J]. 2018, 26(4): 4832-4841, https://www.webofscience.com/wos/woscc/full-record/WOS:000426268500098.
[29] Zeng, X L, Yu, J L, Cheng, S Y, Lai, Y F, Chen, Y H, Huang, W. Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation. JOURNAL OF APPLIED PHYSICS[J]. 2017, 121(19): http://ir.semi.ac.cn/handle/172111/28299.
[30] Jia, Caihong, Yin, Xiaoqian, Yang, Guang, Wu, Yonghui, Li, Jiachen, Chen, Yonghai, Zhang, Weifeng. Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect. APPLIED PHYSICS LETTERS[J]. 2017, 111(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000413590200004.
[31] Qing Wu, Yu Liu, Hailong Wang, Yuan Li, Wei Huang, Jianhua Zhao, Yonghai Chen. Observation of spin-polarized photoconductivity in (Ga; Mn)As/GaAs heterojunction without. Scientific Reports[J]. 2017, 7: 40558-, http://ir.semi.ac.cn/handle/172111/28415.
[32] Fang, Yinglong, Li, Jiachen, Chen, Yonghai, Zhang, Weifeng, Jia, Caihong. Magnetic field-induced bipolar resistive switching and negative differential resistance in (110)SrTiO3: Nb/ZnO heterojunctions. PHYSICA B-CONDENSED MATTER[J]. 2017, 521: 69-72, http://dx.doi.org/10.1016/j.physb.2017.06.047.
[33] Yu, J L, Chen, Y H, Liu, Y, Cheng, S Y. Effects of Strain in Low-Dimensional Semiconductor Structures. NANOSCIENCE AND NANOTECHNOLOGY LETTERSnull. 2017, 9(7): 1066-1082, https://www.webofscience.com/wos/woscc/full-record/WOS:000410792700014.
[34] Guan, Hongming, Tang, Ning, Xu, Xiaolong, Shang, LiangLiang, Huang, Wei, Fu, Lei, Fang, Xianfa, Yu, Jiachen, Zhang, Caifeng, Zhang, Xiaoyue, Dai, Lun, Chen, Yonghai, Ge, Weikun, Shen, Bo. Photon wavelength dependent valley photocurrent in multilayer MoS2. PHYSICAL REVIEW B[J]. 2017, 96(24): http://ir.semi.ac.cn/handle/172111/28297.
[35] Wu, Qing, Liu, Yu, Wang, Hailong, Li, Yuan, Huang, Wei, Zhao, Jianhua, Chen, Yonghai. Observation of spin-polarized photoconductivity in (Ga, Mn) As/GaAs heterojunction without magnetic field. SCIENTIFIC REPORTS[J]. 2017, 7: https://www.webofscience.com/wos/woscc/full-record/WOS:000391934500001.
[36] Zhu, Laipan, Huang, Wei, Renucci, Pierre, Marie, Xavier, Liu, Yu, Li, Yuan, Wu, Qing, Zhang, Yang, Xu, Bo, Lu, Yuan, Chen, Yonghai. Angular Dependence of the Spin Photocurrent in a Co-Fe-B/MgO/n-i-p GaAs Quantum-Well Structure. PHYSICAL REVIEW APPLIED[J]. 2017, 8(6): http://ir.semi.ac.cn/handle/172111/28304.
[37] Yu, Jinling, Zeng, Xiaolin, Zhang, Liguo, He, Ke, Cheng, Shuying, Lai, Yunfeng, Huang, Wei, Chen, Yonghai, Yin, Chunming, Xue, Qikun. Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3. NANO LETTERS[J]. 2017, 17(12): 7878-7885, http://ir.semi.ac.cn/handle/172111/28296.
[38] J.L. Yu, Y.H. Chen, S.Y. Cheng, X.L. Zeng, Y. Liu, Y.F. Lai, Q. Zheng. Separation of the intrinsic and extrinsic mechanisms of the photo-induced anomalous Hall effect. Physica E[J]. 2017, 90: 55–60-, http://ir.semi.ac.cn/handle/172111/28298.
[39] Caihong Jia, Xiaoqian Yin, Guang Yang, Yonghui Wu, Jiachen Li, Yonghai Chen, Weifeng Zhang. Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect. Appl. Phys. Lett.[J]. 2017, 111: 113506-, http://ir.semi.ac.cn/handle/172111/28295.
[40] Yinglong Fang, Jiachen Li, Yonghai Chen, Weifeng Zhang, Caihong Jia. Magnetic field-induced bipolar resistive switching and negative differential resistance in (110)SrTiO3:Nb/ZnO heterojunctions. Physica B: Physics of Condensed Matter. 2017, 521: 69-72, http://dx.doi.org/10.1016/j.physb.2017.06.047.
[41] Yang, GuanQing, Zhang, ShiZhu, Xu, Bo, Chen, YongHai, Wang, ZhanGuo. Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation-dissolution-regrowth method. CHINESE PHYSICS B[J]. 2017, 26(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000403063200001.
[42] Han, Ming, Ren, Yong, Li, Jiachen, Chen, Yonghai, Zhang, Weifeng, Jia, Caihong. Enhancing rectification of Nb:SrTiO3/ZnO heterojunctions by magnetic field. VACUUM[J]. 2017, 142: 66-71, http://dx.doi.org/10.1016/j.vacuum.2017.05.007.
[43] 杨冠卿, 张世著, 徐波, 陈涌海, 王占国. Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation–dissolution–regrowth method. 中国物理B[J]. 2017, 26(6): 068102-, http://ir.semi.ac.cn/handle/172111/28121.
[44] Huang, Wei, Liu, Yu, Zhu, Laipan, Zheng, Xiantong, Li, Yuan, Wu, Qing, Wang, Yixin, Wang, Xinqiang, Chen, Yonghai. Reflectance difference spectroscopy microscope for circular defects on InN films. OPTICS EXPRESS[J]. 2016, 24(13): 15059-15070, http://ir.semi.ac.cn/handle/172111/27682.
[45] Zhu, Laipan, Liu, Yu, Huang, Wei, Qin, Xudong, Li, Yuan, Wu, Qing, Chen, Yonghai. Spin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light. NANOSCALE RESEARCH LETTERS[J]. 2016, 11(1): http://ir.semi.ac.cn/handle/172111/27720.
[46] Yu, Jinling, Zeng, Xiaolin, Cheng, Shuying, Chen, Yonghai, Liu, Yu, Lai, Yunfeng, Zheng, Qiao, Ren, Jun. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells. NANOSCALE RESEARCH LETTERS[J]. 2016, 11: [47] Jinling Yu, Xiaolin Zeng, Shuying Cheng, Yonghai Chen, Yu Liu, Yunfeng Lai, Qiao Zheng, Jun Ren. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells. Nanoscale res lett[J]. 2016, 11(1): 477-, http://ir.semi.ac.cn/handle/172111/27676.
[48] Jun Yin, Yang Li, Shengchang Chen, Changqing Chen, Jing Li, Junyong Kang, Wei Li, Peng Jin, Yonghai Chen, Zhihao Wu, Jiangnan Dai, Yanyan Fang. Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum. Advanced optical materials[J]. 2015, 2(5): 451-458, http://ir.semi.ac.cn/handle/172111/26866.
[49] Li, Yuan, Liu, Yu, Zhu, Laipan, Qin, Xudong, Wu, Qing, Huang, Wei, Niu, Zhichuan, Xiang, Wei, Hao, Hongyue, Chen, Yonghai. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice. APPLIED PHYSICS LETTERS[J]. 2015, 106(19): http://ir.semi.ac.cn/handle/172111/26775.
[50] Yu, J L, Cheng, S Y, Lai, Y F, Zheng, Q, Chen, Y H, Tang, C G. Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(1): http://ir.semi.ac.cn/handle/172111/26776.
[51] Zhang, Hongyi, Huo, Yongheng, Lindfors, Klas, Chen, Yonghai, Schmidt, Oliver G, Rastelli, Armando, Lippitz, Markus. Narrow-line self-assembled GaAs quantum dots for plasmonics. APPLIED PHYSICS LETTERS[J]. 2015, 106(10): http://ir.iphy.ac.cn/handle/311004/60281.
[52] Zhu, Laipan, Liu, Yu, Gao, Hansong, Qin, Xudong, Li, Yuan, Wu, Qing, Chen, Yonghai. Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well. NANOSCALE RESEARCH LETTERS[J]. 2014, 9: http://ir.semi.ac.cn/handle/172111/26206.
[53] Li, Yuan, Liu, Yu, Jiang, Chongyun, Zhu, Laipan, Qin, Xudong, Gao, Hansong, Ma, Wenquan, Guo, Xiaolu, Zhang, Yanhua, Chen, Yonghai. Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb superlattice. NANOSCALE RESEARCH LETTERS[J]. 2014, 9: http://ir.semi.ac.cn/handle/172111/26227.
[54] Zhu, L P, Liu, Y, Jiang, C Y, Qin, X D, Li, Y, Gao, H S, Chen, Y H. Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells. JOURNAL OF APPLIED PHYSICS[J]. 2014, 115(8): http://ir.semi.ac.cn/handle/172111/25962.
[55] Yu, Jinling, Cheng, Shuying, Lai, Yunfeng, Zheng, Qiao, Chen, Yonghai. Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells. NANOSCALE RESEARCH LETTERS[J]. 2014, 9: http://ir.semi.ac.cn/handle/172111/26385.
[56] Gao, H S, Liu, Y, Zhang, H Y, Wu, S J, Jiang, C Y, Yu, J L, Zhu, L P, Li, Y, Huang, W, Chen, Y H. Microscopic reflection difference spectroscopy for strain field of GaN induced by Berkovich nanoindentation. APPLIED PHYSICS LETTERS[J]. 2014, 104(5): http://ir.semi.ac.cn/handle/172111/25982.
[57] Jia, C H, Sun, X W, Li, G Q, Chen, Y H, Zhang, W F. Origin of attendant phenomena of bipolar resistive switching and negative differential resistance in SrTiO3:Nb/ZnO heterojunctions. APPLIED PHYSICS LETTERS[J]. 2014, 104(4): http://ir.semi.ac.cn/handle/172111/26079.
[58] Zhu, Laipan, Liu, Yu, Jiang, Chongyun, Yu, Jinling, Gao, Hansong, Ma, Hui, Qin, Xudong, Li, Yuan, Wu, Qing, Chen, Yonghai. Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well. APPLIED PHYSICS LETTERS[J]. 2014, 105(15): http://ir.semi.ac.cn/handle/172111/26044.
[59] Mei, Fuhong, Zhang, Shan, Tang, Ning, Duan, Junxi, Xu, Fujun, Chen, Yonghai, Ge, Weikun, Shen, Bo. Spin transport study in a Rashba spin-orbit coupling system. SCIENTIFIC REPORTS[J]. 2014, 4: http://ir.semi.ac.cn/handle/172111/25980.
[60] Liu, Yu, Chen, Yonghai, Wang, Chiyun, Wang, Zhanguo. Effective period potential in a hybrid mesoscopic ring with Rashba spin-orbit interaction. PHYSICS LETTERS A[J]. 2014, 378(5-6): 584-589, http://ir.semi.ac.cn/handle/172111/26158.
[61] Laipan Zhu, Yu Liu, Hansong Gao, Xudong Qin, Yuan Li, Qing Wu, Yonghai Chen. Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs. Nanoscale Research Letters. 2014, 9(1): 493-493, http://dx.doi.org/10.1186/1556-276X-9-493.
[62] Yu, J L, Lai, Y F, Wang, Y Z, Cheng, S Y, Chen, Y H. Polarized Raman scattering of single ZnO nanorod. JOURNAL OF APPLIED PHYSICS[J]. 2014, 115(3): http://ir.semi.ac.cn/handle/172111/26146.
[63] Yuan Li, Yu Liu, Chongyun Jiang, Laipan Zhu, Xudong Qin, Hansong Gao, Wenquan Ma, Xiaolu Guo, Yanhua Zhang, Yonghai Chen. Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs. Nanoscale Research Letters. 2014, 9(1): 279-279, http://dx.doi.org/10.1186/1556-276X-9-279.
[64] Yu, Jinling, Chen, Yonghai, Cheng, Shuying, Lai, Yunfeng. Temperature dependence of anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference spectroscopy. APPLIED OPTICS[J]. 2013, 52(5): 1035-1040, http://ir.semi.ac.cn/handle/172111/24377.
[65] Yu, J L, Chen, Y H, Bo, X, Jiang, C Y, Ye, X L, Wu, S J, Gao, H S. In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy. JOURNAL OF APPLIED PHYSICS[J]. 2013, 113(8): http://ir.semi.ac.cn/handle/172111/24367.
[66] Yu, J L, Chen, Y H, Liu, Y, Jiang, C Y, Ma, H, Zhu, L P, Qin, X D. Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room temperature. APPLIED PHYSICS LETTERS[J]. 2013, 102(20): http://ir.semi.ac.cn/handle/172111/24510.
[67] Yu, J L, Chen, Y H, Liu, Y, Jiang, C Y, Ma, H, Zhu, L P, Qin, X D. Observation of circular dichroism in (001)-oriented P-I-N InGaAs/GaAs quantum wells without magnetic field. APPLIED PHYSICS LETTERS[J]. 2013, 102(7): http://ir.semi.ac.cn/handle/172111/24371.
[68] Wu, Shujie, Chen, Yonghai, Yu, Jinling, Gao, Hansong, Jiang, Chongyun, Huang, Jianliang, Zhang, Yanhua, Wei, Yang, Ma, Wenquan. In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces. NANOSCALE RESEARCH LETTERS[J]. 2013, 8(1): http://ir.semi.ac.cn/handle/172111/24507.
[69] Yu, J L, Cheng, S Y, Lai, Y F, Chen, Y H. Investigation anisotropic mode splitting induced by electro-optic birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser. JOURNAL OF APPLIED PHYSICS[J]. 2013, 114(3): http://ir.semi.ac.cn/handle/172111/24489.
[70] Ma, Hui, Jiang, Chongyun, Liu, Yu, Zhu, Laipan, Qin, Xudong, Chen, Yonghai. Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two dimensional electron gas by photo-modulation technique. APPLIED PHYSICS LETTERS[J]. 2013, 102(23): http://ir.semi.ac.cn/handle/172111/24508.
[71] Zhang, Hongyi, Liu, Yu, Ye, Xiaoling, Chen, Yonghai. Photo-instability of CdSe/ZnS quantum dots in poly(methylmethacrylate) film. JOURNAL OF APPLIED PHYSICS[J]. 2013, 114(24): http://ir.semi.ac.cn/handle/172111/24493.
[72] Ma, Hui, Jiang, Chongyun, Liu, Yu, Yu, Jinling, Chen, Yonghai. Helicity dependent photocurrent enabled by unpolarized radiation in a GaAs/Al0.3Ga0.7As two-dimensional electron system. APPLIED PHYSICS LETTERS[J]. 2013, 102(21): http://ir.semi.ac.cn/handle/172111/24509.
[73] Zhang, Hongyi, Chen, Yonghai, Zhou, Xiaolong, Jia, Yanan, Ye, Xiaoling, Xu, Bo, Wang, Zhanguo. Observation of photo darkening in self assembled InGaAs/GaAs quantum dots. JOURNAL OF APPLIED PHYSICS[J]. 2013, 113(17): https://www.webofscience.com/wos/woscc/full-record/WOS:000319292800339.
[74] Liu, Jian-Qing, Chen, Yong-Hai, Xu, Bo, Wang, Zhan-Guo. Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface. Advanced materials research[J]. 2012, 341-342: 73-76, http://ir.semi.ac.cn/handle/172111/23917.
[75] Ma, Hui, Jiang, Chongyun, Liu, Yu, Yu, Jinling, Chen, Yonghai. Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system. Journal of physics: conference series[J]. 2012, 400(Part 4): 042041-, http://www.irgrid.ac.cn/handle/1471x/622118.
[76] Zhang, Hongyi, Chen, Yonghai, Zhou, Guanyu, Tang, Chenguang, Wang, Zhanguo. Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots. NANOSCALE RESEARCH LETTERS[J]. 2012, 7: http://ir.semi.ac.cn/handle/172111/23758.
[77] Liu, Jian-Qing, Chen, Yong-Hai, Xu, Bo, Wang, Zhan-Gzuo. Smooth GaAs (110) surface fabrication using the Ga-assisted deoxidation method. Advanced materials research[J]. 2012, 341-342: 138-141, http://www.irgrid.ac.cn/handle/1471x/639715.
[78] Jiang, Chongyun, Ma, Hui, Yu, Jinling, Liu, Yu, Chen, Yonghai. Radiation modulation of circular photogalvanic effect in two-dimensional electron gas system. Journal of physics: conference series[J]. 2012, 400(Part 4): 042024-, http://ir.semi.ac.cn/handle/172111/24057.
[79] Jiang, Chongyun, Ma, Hui, Yu, Jinling, Liu, Yu, Chen, Yonghai. Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system. APPLIED PHYSICS LETTERS[J]. 2011, 99(3): http://ir.semi.ac.cn/handle/172111/22797.
[80] Yu, J L, Chen, Y H, Jiang, C Y, Liu, Y, Ma, H. Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells. JOURNAL OF APPLIED PHYSICS[J]. 2011, 109(5): http://ir.semi.ac.cn/handle/172111/21277.
[81] Zhang Weifeng, Jia Caihong, Chen Yonghai, Guo Yan, Liu Xianglin, Yang Shaoyan, Wang Zhanguo. Valence band offset of InN/BaTiO 3 heterojunction measured by X-ray photoelectron spectroscopy. Nanoscale Research Letters[J]. 2011, 6(1): https://doaj.org/article/a0e8527429ac464aaf67c04b5d5d4694.
[82] Zhou, Xiaolong, Chen, Yonghai, Xu, Bo. Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure. NANOSCALE RESEARCH LETTERS[J]. 2011, 6(1): http://www.corc.org.cn/handle/1471x/2426170.
[83] Li, Tianfeng, Chen, Yonghai, Lei, Wen, Zhou, Xiaolong, Wang, Zhanguo. Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES[J]. 2011, 43(4): 869-873, http://ir.semi.ac.cn/handle/172111/21285.
[84] Zhou, X L, Chen, Y H, Li, T F, Zhou, G Y, Zhang, H Y, Ye, X L, Xu, Bo, Wang, Z G. Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots. JOURNAL OF APPLIED PHYSICS[J]. 2011, 109(9): http://ir.semi.ac.cn/handle/172111/21237.
[85] Guo, Yubing, Chen, Yonghai, Xiang, Ying, Qu, Shengchun, Wang, Zhanguo. Photorefractive effects in ZnO nanorod doped liquid crystal cell. APPLIED OPTICS[J]. 2011, 50(8): 1101-1104, http://ir.semi.ac.cn/handle/172111/21283.
[86] Jia, Caihong, Chen, Yonghai, Guo, Yan, Liu, Xianglin, Yang, Shaoyan, Zhang, Weifeng, Wang, Zhanguo. Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy. NANOSCALE RESEARCH LETTERS[J]. 2011, 6: http://ir.semi.ac.cn/handle/172111/23139.
[87] Jiang, Chongyun, Chen, Yonghai, Ma, Hui, Yu, Jinling, Liu, Yu. Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system. APPLIED PHYSICS LETTERS[J]. 2011, 98(23): http://ir.semi.ac.cn/handle/172111/21395.
[88] Caihong Jia, Yonghai Chen, Yan Guo, Xianglin Liu, Shaoyan Yang, Weifeng Zhang, Zhanguo Wang. Valence band offset of InN 3 heterojunction measured by X-ray photoelectron spectroscopy. Nanoscale Research Letters. 2011, 6(1): 316-316, http://dx.doi.org/10.1186/1556-276X-6-316.
[89] Liu GH (Liu Genhua), Zhou GH (Zhou Guanghui), Chen YH (Chen Yong-Hai). Effect of transverse electric field on helical edge states in a quantum spin-Hall system. Applied physics letters 卷: 99 期: 22 文献号: 222111[J]. 2011, 99(22): 222111-, http://ir.semi.ac.cn/handle/172111/22912.
[90] 郭玉冰, 陈涌海, 项颖, 曲胜春, 王占国. Photorefractive Effect of a Liquid Crystal Cell with a ZnO Nanorod Doped in Only One PVA Layer. CHINESE PHYSICS LETTERS[J]. 2011, 28(9): 198-200, http://ir.semi.ac.cn/handle/172111/22795.
[91] Guo Yubing, Chen Yonghai, Xiang Ying, Qu Shengchun. Voltage threshold behaviors of ZnO nanorod doped liquid crystal cell. 半导体学报[J]. 2011, 32(10): 105005-1, http://lib.cqvip.com/Qikan/Article/Detail?id=39451794.
[92] Zhou, G Y, Chen, Y H, Yu, J L, Zhou, X L, Ye, X L, Jin, P, Wang, Z G. The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing. APPLIED PHYSICS LETTERS[J]. 2011, 98(7): http://ir.semi.ac.cn/handle/172111/21309.
[93] Zhou, X L, Chen, Y H, Zhang, H Y, Zhou, G Y, Li, T F, Liu, J Q, Ye, X L, Xu, Bo, Wang, Z G. Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment. JOURNAL OF APPLIED PHYSICS[J]. 2011, 109(8): http://ir.semi.ac.cn/handle/172111/21241.
[94] Liu, Yu, Chen, Yonghai, Wang, Zhanguo. Chiral splitting and polarization-dependent optical absorption of exciton for Rashba spin-orbit interaction. PHYSICS LETTERS A[J]. 2011, 375(33): 3025-3031, http://www.irgrid.ac.cn/handle/1471x/264194.
[95] Liu, Genhua, Chen, Yonghai, Jia, Caihong, Hao, GuoDong, Wang, Zhanguo. Spin splitting modulated by uniaxial stress in InAs nanowires. JOURNAL OF PHYSICS-CONDENSED MATTER[J]. 2011, 23(1): http://ir.semi.ac.cn/handle/172111/20686.
[96] Zhou, X L, Chen, Y H, Ye, X L, Xu, Bo, Wang, Z G. Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states. JOURNAL OF APPLIED PHYSICS[J]. 2011, 109(11): http://www.irgrid.ac.cn/handle/1471x/444222.
[97] Yu, JinLing, Chen, YongHai, Tang, ChenGuang, Jiang, ChongYun, Ye, XiaoLing. Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain. NANOSCALE RESEARCH LETTERS[J]. 2011, 6(1): http://ir.semi.ac.cn/handle/172111/22951.
[98] Hao Guodong, Chen Yonghai, Fan Yaming, Huang Xiaohui, Wang Huaibing. Strain effects on optical polarisation properties in (11^-22) plane GaN films. 中国物理:英文版[J]. 2010, 117104-1, http://lib.cqvip.com/Qikan/Article/Detail?id=35788622.
[99] Hao GuoDong, Chen YongHai, Fan YaMing, Huang XiaoHui, Wang HuaiBing. Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films. CHINESE PHYSICS B[J]. 2010, 19(11): http://ir.semi.ac.cn/handle/172111/20683.
[100] 唐光华, 徐波, 姜立稳, 孔金霞, 孔宁, 梁德春, 梁平, 叶小玲, 金鹏, 刘峰奇, 陈涌海, 王占国. A Photovoltaic InAs Quantum-Dot Infrared Photodetector. 中国物理快报:英文版. 2010, 27(4): 219-222, http://lib.cqvip.com/Qikan/Article/Detail?id=33419748.
[101] Yin, Chunming, Shen, Bo, Zhang, Qi, Xu, Fujun, Tang, Ning, Cen, Longbin, Wang, Xinqiang, Chen, Yonghai, Yu, Jinling. Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain. APPLIED PHYSICS LETTERS[J]. 2010, 97(18): http://ir.semi.ac.cn/handle/172111/20652.
[102] Liu, Yu, Chen, Yonghai, Wang, Zhanguo. Kondo effect in a triangular triple quantum dots ring with three terminals. SOLID STATE COMMUNICATIONS[J]. 2010, 150(25-26): 1136-1140, http://dx.doi.org/10.1016/j.ssc.2010.03.022.
[103] Hao, GuoDong, Chen, YongHai, Hao, YaFei. Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2009, 48(4): http://ir.semi.ac.cn/handle/172111/7235.
[104] Hao YaFei, Chen YongHai, Hao GuoDong, Wang ZhanGuo. Anisotropic Spin Splitting in Step Quantum Wells. CHINESE PHYSICS LETTERS[J]. 2009, 26(3): 204-207, http://lib.cqvip.com/Qikan/Article/Detail?id=29591941.
[105] 郝亚非, 陈涌海, 郝国栋, 王占国. Anisotropic Spin Splitting in Step Quantum Wells. 中国物理快报:英文版. 2009, 26(3): 204-207, http://lib.cqvip.com/Qikan/Article/Detail?id=29591941.
[106] Hao Yafei, Chen Yonghai, Hao Guodong, Wang Zhanguo. Effect of a step quantum well structure and an electric-field on the Rashba spin splitting. 半导体学报. 2009, 11-14, http://lib.cqvip.com/Qikan/Article/Detail?id=30708678.
[107] Hao YaFei, Chen YongHai, Hao GuoDong, Wang ZhanGuo. Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells. CHINESE PHYSICS LETTERS[J]. 2009, 26(7): 263-266, http://lib.cqvip.com/Qikan/Article/Detail?id=30943011.
[108] 张曾, 张荣, 谢自力, 刘斌, 修向前, 李弋, 傅德颐, 陆海, 陈鹏, 韩平, 郑有炓, 汤晨光, 陈涌海, 王占国. 厚度对MOCVD生长InN薄膜位错特性与光电性质的影响. 物理学报. 2009, 3416-3420, http://lib.cqvip.com/Qikan/Article/Detail?id=30431862.
[109] Zhao Chao, Chen Yonghai, Xu Bo, Tang Chenguang, Wang Zhanguo, Cho YH, Kim EK. Morphology and wetting layer properties of InAs/GaAs nanostructures. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4null. 2009, 6(4): 789-792, [110] 陈涌海, 赵暕, 王占国, 徐波. 基于图形衬底的InAs/GaAs量子点和量子环液滴外延. 半导体学报. 2008, 29(10): 2003-2008, http://lib.cqvip.com/Qikan/Article/Detail?id=28463825.
[111] Wu, Yunlong, Zhang, Liuwan, Xie, Guanlin, Ni, Jun, Chen, Yonghai. Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates. SOLID STATE COMMUNICATIONS[J]. 2008, 148(5-6): 247-250, http://dx.doi.org/10.1016/j.ssc.2008.08.009.
[112] 周立, 陈涌海, 王占国, 赵有文. 多晶AlN光学性质研究. 光散射学报. 2008, 20(3): 245-248, http://lib.cqvip.com/Qikan/Article/Detail?id=28251831.
[113] 张春玲, 唐蕾, 徐波, 陈涌海, 王占国. 解理面预处理方法对二次外延的影响. 半导体学报. 2008, 29(3): 544-548, http://lib.cqvip.com/Qikan/Article/Detail?id=26739417.
[114] Zhang, Ting, Zhang, Weifeng, Chen, Yonghai, Yin, Jiang. Third-order optical nonlinearities of lead-free (Na1-xKx)(0.5)Bi0.5TiO3 thin films. OPTICS COMMUNICATIONS[J]. 2008, 281(3): 439-443, http://dx.doi.org/10.1016/j.optcom.2007.09.052.
[115] Liu, Genhua, Chen, Yonghai, Jia, Caihong, Wang, Zhanguo. Spin precession induced by an effective magnetic field in a two-dimensional electron gas. APPLIED PHYSICS LETTERS[J]. 2008, 93(23): http://ir.semi.ac.cn/handle/172111/7479.
[116] Wu, Yunlong, Zhang, Liuwan, Xie, Guanlin, Zhu, JiaLin, Chen, Yonghai. Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions. APPLIED PHYSICS LETTERS[J]. 2008, 92(1): http://ir.semi.ac.cn/handle/172111/6914.
[117] 王志成, 徐波, 陈涌海, 石礼伟, 梁志梅, 王占国. Electronic Energy Levels in an Asymmetric Quantum-Dots-in-a-Well Structure for Infrared Photodetectors. 中国物理快报:英文版. 2008, 25(7): 2645-2648, http://lib.cqvip.com/Qikan/Article/Detail?id=27686200.
[118] 周振宇, 陈涌海. 用偏振差分透射谱技术测量半导体晶体片应力分布. 硅酸盐通报. 2008, 27(3): 580-583, http://lib.cqvip.com/Qikan/Article/Detail?id=27645045.
[119] Wang, Zhicheng, Chen, Yonghai, Xu, Bo, Liu, Fengqi, Shi, Liwei, Tang, Chenguang, Wang, Zhanguo. Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES[J]. 2008, 40(3): 633-636, http://ir.semi.ac.cn/handle/172111/6872.
[120] Liu, Genhua, Chen, Yonghai, Liu, Yu, Jia, Caihong, Wang, Zhanguo. Spin-dependent transport and spin polarization in coupled quantum wells. JOURNAL OF APPLIED PHYSICS[J]. 2008, 104(6): http://ir.semi.ac.cn/handle/172111/6412.
[121] Hao GuoDong, Chen YongHai. Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN. CHINESE PHYSICS LETTERS[J]. 2008, 25(11): 4139-4142, http://lib.cqvip.com/Qikan/Article/Detail?id=28714922.
[122] Jia, Caihong, Chen, Yonghai, Liu, Genhua, Liu, Xianglin, Yang, Shaoyan, Wang, Zhanguo. Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD. JOURNAL OF CRYSTAL GROWTH[J]. 2008, 311(1): 200-204, http://ir.semi.ac.cn/handle/172111/7405.
[123] 周立, 陈涌海, 金鹏, 王占国. A面(11-20)ZnO薄膜中杂质的偏振PL谱研究. 光散射学报. 2008, 20(2): 186-189, http://lib.cqvip.com/Qikan/Article/Detail?id=27578656.
[124] 郝国栋, 陈涌海. Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN. 中国物理快报:英文版. 2008, 25(11): 4139-4142, http://lib.cqvip.com/Qikan/Article/Detail?id=28714922.
[125] Fan HaiBo, Yang ShaoYan, Zhang PanFeng, Wei HongYuan, Liu XiangLin, Jiao ChunMei, Zhu QinSheng, Chen YongHai, Wang ZhanGuo. A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition. CHINESE PHYSICS LETTERS[J]. 2008, 25(8): 3063-3066, http://lib.cqvip.com/Qikan/Article/Detail?id=27934374.
[126] Wang ZhiCheng, Xu Bo, Chen YongHai, Shi LiWei, Liang ZhiMei, Wang ZhanGuo. Electronic energy levels in an asymmetric quantum-dots-in-a-well structure for infrared photodetectors. CHINESE PHYSICS LETTERS[J]. 2008, 25(7): 2645-2648, http://lib.cqvip.com/Qikan/Article/Detail?id=27686200.
[127] Hu LiangJun, Chen YongHai, Ye XiaoLing, Wang ZhanGuo. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation. ACTA PHYSICA SINICA[J]. 2007, 56(8): 4930-4935, http://ir.semi.ac.cn/handle/172111/9344.
[128] Sun, Jie, Zhou, Dayong, Li, Ruoyuan, Zhao, Chang, Ye, Xiaoling, Xu, Bo, Chen, Yonghai, Wang, Zhanguo. Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers. MODERN PHYSICS LETTERS B[J]. 2007, 21(14): 859-866, http://ir.semi.ac.cn/handle/172111/6930.
[129] Yuanli Wang, Hua Cui, Wen Lei, Yahong Su, Yonghai Chen, Ju Wu, Zhanguo Wang. Influence of InAs deposition thickness on the structural and optical properties of InAs quantum wires. 北京科技大学学报:英文版. 2007, 14(4): 341-344, http://lib.cqvip.com/Qikan/Article/Detail?id=25288454.
[130] 刘俊朋, 曲胜春, 陈涌海, 许颖, 曾湘波, 梁凌燕, 王智杰, 周慧英, 王占国. Effect of Ultraviolet Light on Hybrid Zinc Oxide Polymer Bulk Heterojunction Solar Cells. 中国物理快报:英文版. 2007, 24(7): 2070-2073, http://lib.cqvip.com/Qikan/Article/Detail?id=25743595.
[131] 胡良均, 陈涌海, 叶小玲, 王占国. 离子注入法Mn掺杂InAs/GaAs量子点的光磁性质. 半导体学报. 2007, 84-87, http://lib.cqvip.com/Qikan/Article/Detail?id=1001096851.
[132] 刘俊朋, 曲胜春, 曾湘波, 许颖, 陈涌海, 王智杰, 周慧英, 王占国. 有机/无机复合体异质结太阳电池. 半导体学报. 2007, 364-368, http://lib.cqvip.com/Qikan/Article/Detail?id=1001096925.
[133] 赵玲慧, 陈涌海. 一种新型的材料内应力测试方法——偏振透射差分法. 半导体学报. 2007, 555-557, http://lib.cqvip.com/Qikan/Article/Detail?id=1001096837.
[134] 刘俊朋, 曲胜春, 许颖, 陈涌海, 曾湘波, 王智杰, 周慧英, 王占国. Photovoltaic and Electroluminescence Characters in Hybrid ZnO and Conjugated Polymer Bulk Heterojunction Devices. 中国物理快报:英文版. 2007, 24(5): 1350-1353, http://lib.cqvip.com/Qikan/Article/Detail?id=25865716.
[135] 胡良均, 陈涌海, 叶小玲, 王占国. Mn离子注入InAs/GaAs量子点结构材料的光电性质研究. 物理学报. 2007, 56(8): 4930-4935, http://lib.cqvip.com/Qikan/Article/Detail?id=25103805.
[136] 高玉竹, 龚秀英, 陈涌海, 吴俊. 截止波长12μm的InAS0.04Sb0.96/GaAs的熔体外延生长及特性研究. 光电子.激光. 2007, 18(1): 67-70, http://lib.cqvip.com/Qikan/Article/Detail?id=24019278.
[137] Sun, Jie, Jin, Peng, Zhao, Chang, Yu, Like, Ye, Xiaoling, Xu, Bo, Chen, Yonghai, Wang, Zhanguo. Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer. JOURNAL OF THE ELECTROCHEMICAL SOCIETY[J]. 2006, 153(7): G703-G706, http://ir.semi.ac.cn/handle/172111/10638.
[138] 张冠杰, 陈涌海, 姚江宏, 舒强, 刘如彬, 舒永春, 许京军, 王占国. InAlAs量子点材料的AFM和拉曼散射研究. 激光与光电子学进展[J]. 2006, 43(4): 68-72, http://ir.semi.ac.cn/handle/172111/16665.
[139] Zhao Lei, Chen Yonghai, Zuo Yuhua, Wang Haining, Shi Wenhua. Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy. SPECTROSCOPY AND SPECTRAL ANALYSIS[J]. 2006, 26(7): 1185-1189, http://ir.semi.ac.cn/handle/172111/10444.
[140] 王占国, 陈涌海, 叶小玲. 纳米半导体技术. 2006, http://ir.semi.ac.cn/handle/172111/6258.
[141] 王占国, 许京军, 张冠杰, 徐波, 陈涌海, 姚江宏, 林耀望, 舒永春, 皮彪, 邢晓东, 刘如彬, 舒强. 不同淀积厚度InAs量子点的喇曼散射. 半导体学报. 2006, 27(6): 1012-1015, http://lib.cqvip.com/Qikan/Article/Detail?id=22152544.
[142] Zhao Lei, Chen Yonghai, Zuo Yuhua, Wang Haining, Shi Wenhua. Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy. SPECTROSCOPY AND SPECTRAL ANALYSIS[J]. 2006, 26(7): 1185-1189, http://ir.semi.ac.cn/handle/172111/10444.
[143] 杨少延, 柴春林, 周剑平, 刘志凯, 陈涌海, 陈诺夫, 王占国. 稀土功能薄膜的离子束外延法制备生长研究. 中国稀土学报. 2005, 23(5): 576-581, http://lib.cqvip.com/Qikan/Article/Detail?id=20413521.
[144] 陈涌海. 砷化镓基量子级联激光器研究取得重要进展. 中国基础科学. 2005, 7(3): 30-30, http://lib.cqvip.com/Qikan/Article/Detail?id=15915849.
[145] 陈涌海, 杨少延, 王占国. 应变异质结构中超薄中间层的应变协调作用. 半导体学报. 2005, 26(9): 1740-1743, http://lib.cqvip.com/Qikan/Article/Detail?id=20260618.
[146] 金峰, 鲁华祥, 李凯, 陈涌海, 王占国. 量子点的原子力显微镜测试结果分析:数学形态学的实现. 半导体学报. 2005, 26(11): 2120-2126, http://lib.cqvip.com/Qikan/Article/Detail?id=20622828.
[147] 钱家骏, 叶小玲, 陈涌海, 徐波, 韩勤, 王占国. InAs/GaAs多层堆垛量子点激光器的激射特性. 半导体学报. 2005, 184-188, http://lib.cqvip.com/Qikan/Article/Detail?id=1000267853.
[148] 雷文, 陈涌海, 程伟明, 车晓玲, 刘俊歧, 黄秀颀, 王占国. InP基应变自组装纳米材料及其光电子器件研究进展. 微纳电子技术[J]. 2004, 41(4): 8-17, http://lib.cqvip.com/Qikan/Article/Detail?id=9551530.
[149] 王春华, 陈涌海, 王占国. 室温和350℃下注Mn的GaAs/AIGaAs超晶格的磁学性质. 半导体学报. 2004, 25(10): 1253-1257, http://lib.cqvip.com/Qikan/Article/Detail?id=10865183.
[150] 王春华, 陈涌海, 王占国. 室温和350℃下注Mn的GaAs/AlGaAs超晶格的磁学性质. 半导体学报[J]. 2004, 25(10): 1253-1257, http://ir.semi.ac.cn/handle/172111/17289.
[151] 钱家骏, 徐波, 陈涌海, 叶小玲, 韩勤, 王占国. 应变自组装InAs/GaAs量子点材料与器件光学性质研究. 半导体学报. 2003, 24(B05): 51-55, http://lib.cqvip.com/Qikan/Article/Detail?id=9068873.
[152] 陈涌海, 叶小玲, 王占国. 量子阱平面光学各向异性的偏振差分反射谱研究. 固体电子学研究与进展. 2002, 22(4): 412-416, http://lib.cqvip.com/Qikan/Article/Detail?id=7294312.
[153] 张志成, 杨少延, 陈涌海, 王占国. 应变异质外延中的柔性衬底技术. 金属材料研究[J]. 2002, 28(2): 1-6, http://lib.cqvip.com/Qikan/Article/Detail?id=6435553.
[154] 陈涌海, 韩德俊, 刘超, 李国辉, 姬成周, 叶小玲. InGaAs/InGaAsP量子阱激光器材料带隙蓝移研究. 北京师范大学学报:自然科学版. 2001, 37(2): 170-173, http://lib.cqvip.com/Qikan/Article/Detail?id=5234251.
[155] 成步文, 陈涌海, 罗丽萍, 王启明, 杨沁清, 王吉政, 李成, 王红杰, 余金中. Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing. 半导体学报[J]. 2000, 21(1): 18-, http://ir.semi.ac.cn/handle/172111/18845.
[156] 徐波, 陈涌海, 丁鼎, 钱家骏, 张金福, 王占国, 张秀兰, 叶小玲, 刘峰奇, 韩勤, 梁基本. 1.08μm InAs/GaAs量子点激光器光学特性研究. 功能材料与器件学报. 2000, 6(3): 243-247, http://lib.cqvip.com/Qikan/Article/Detail?id=4567083.
[157] 万寿科, 陈涌海, 王占国. 偏振差分反射谱(RDS)测试系统. 功能材料与器件学报. 2000, 6(4): 388-392, http://lib.cqvip.com/Qikan/Article/Detail?id=4761884.
[158] 陈涌海, 杨志宇, 王占国. A new interface anisotropic potential of zine-blends semiconductor interface induced by lattice mismatch. 中国物理快报[J]. 1999, 16(1): 56-, [159] 陈涌海. 半导体及其低维结构的平面光学各向异性研究. 1998, http://ir.semi.ac.cn/handle/172111/4533.
[160] 杨斌, 陈涌海, 王占国, 梁基本, 廖奇为, 林兰英. GaAs/AlGaAs二维电子气(2DEG)散射机理研究. 半导体学报[J]. 1995, 16(4): 248-, [161] 杨斌, 王占国, 陈涌海, 梁基本, 廖奇为, 林兰英, 朱战萍, 徐波, 李伟. 高电子迁移率GaAs/AlxGa(1-x)As二维电子气(2DEG)异质结结构参数优化研究. 半导体学报[J]. 1995, 16(9): 706-, [162] 杨斌, 陈涌海. GaAs/AIGaAs二维电子气(2DEG)散射机理研究. 半导体学报. 1995, 16(4): 248-252, http://lib.cqvip.com/Qikan/Article/Detail?id=5143981.
发表著作
(1) 纳米半导体技术,Nanoscale semiconductor technique,化学工业出版社,2006-04,第2作者

科研活动

   
科研项目
( 1 ) 半导体量子结构自旋分裂效应及其调控, 主持, 国家级, 2010-01--2015-12
( 2 ) 中科院****项目, 主持, 国家级, 2012-01--2014-12
( 3 ) 量子输运中的自旋轨道耦合效应及其调控, 主持, 国家级, 2011-11--2016-08
( 4 ) 量子级联材料能带工程设计及性能预测, 参与, 国家级, 2012-09--2017-08
( 5 ) 圆偏振光激发的反常霍尔效应研究, 主持, 国家级, 2015-01--2018-12
( 6 ) 中远红外及THz 量子级联激光器研究, 参与, 国家级, 2016-07--2019-12
( 7 ) 4-10微米连续可调红外激光光谱仪, 参与, 国家级, 2017-01--2021-12
( 8 ) 中远红外量子级联激光器及应用, 参与, 国家级, 2018-06--2023-04
( 9 ) 中远红外量子级联激光器结构演化及性能预测, 主持, 国家级, 2020-01--2024-12
( 10 ) 高性能中远红外量子级联激光器基础理论与关键技术, 主持, 国家级, 2019-01--2024-12

指导学生

已指导学生

周立  硕士研究生  080501-材料物理与化学  

丁飞  博士研究生  080501-材料物理与化学  

郝国栋  博士研究生  080501-材料物理与化学  

刘根华  博士研究生  080501-材料物理与化学  

贾彩虹  博士研究生  080501-材料物理与化学  

周晓龙  博士研究生  080501-材料物理与化学  

周冠宇  博士研究生  080501-材料物理与化学  

郭玉冰  硕士研究生  080501-材料物理与化学  

蒋崇云  博士研究生  080501-材料物理与化学  

俞金玲  博士研究生  080501-材料物理与化学  

马惠  博士研究生  080501-材料物理与化学  

武树杰  博士研究生  080501-材料物理与化学  

高寒松  博士研究生  080501-材料物理与化学  

张宏毅  博士研究生  080501-材料物理与化学  

秦旭东  博士研究生  080501-材料物理与化学  

朱来攀  博士研究生  080501-材料物理与化学  

李远  博士研究生  080501-材料物理与化学  

邬庆  博士研究生  080501-材料物理与化学  

杨冠卿  博士研究生  080501-材料物理与化学  

黄威  博士研究生  080501-材料物理与化学  

于天  博士研究生  080501-材料物理与化学  

现指导学生

张洋  博士研究生  080501-材料物理与化学  

黎昆  硕士研究生  080501-材料物理与化学  

曾晓琳  博士研究生  080501-材料物理与化学  

吴静  博士研究生  0805Z2-半导体材料与器件  

朱申波  硕士研究生  085204-材料工程  

研究领域

1)半导体低维结构材料和纳米材料研究,主要包括应变自组织半导体量子点(线)材料、纳米线材料、纳米颗粒等材料的光学性质研究,以及新型光电器件探索;
2 )半导体材料的光学偏振特性研究,主要利用反射差分谱等偏振调制光谱技术,研究半导体材料、量子结构材料的光学各向异性及其物理机制;
3)新型半导体光谱技术及应用,主要包括反射差分谱、微区光谱、时间分辨光谱等光谱技术在半导体材料和物理研究中的应用;
4)半导体自旋电子学研究,主要采用圆偏振自旋光电流等技术研究半导体材料中自旋轨道耦合相关的自旋性质,半导体材料中的自旋操控等。

成果与奖励

先后主持了国家重点基础规划项目和课题、国家自然科学基金重大项目和面上项目、中科院重点项目等十余个科研项目。在国际知名学术刊物上发表SCI论文百余篇,获得国家授权发明专利十余项。曾获2004年国家重点基础研究计划(973)先进个人称号、2006年度杰出青年基金获得者、2009年新世纪百千万人才工程国家级人选、2011年度中科院****入选者等奖励和荣誉。
主要学术成绩
1)在半导体低维结构的光学各向异性研究方面,将反射差分谱应用于半导体界面性质研究,揭示了界面原子偏析、界面结构和应变对量子阱光学偏振性质的重要影响;基于反射差分谱(RDS)技术,提出了一种测量量子阱激子各向异性交换分裂的方法,并演示了应变对激子精细分裂的调控作用; 基于RDS技术,建立了半导体衬底材料表面亚损伤和内应力分布的新型表征技术,可用于我国晶片材料相关高技术企业的产品检测。
2)在半导体纳米材料研究方面,提出并证实了组份调制表面上量子线生长的新模型;创新采用反射差分谱技术,观察到了InAs量子点生长演化中的新现象,揭示了应变自组织生长的物理机制;发现液滴外延生长中的临界现象,提出了浸润层耗尽生长的液滴外延生长模型;针对量子点发光行为,提出了多模尺寸分布量子点载流子通道数学模型、以及考虑了量子点隧穿效应的速率方程模型等。
3)在半导体自旋电子学研究方面,利用单轴应变下的圆偏振自旋光电流(CPGE)技术,首次得到AlGaN/GaN异质结构2DEG体系中自旋轨道耦合系数,首次在常温和宏观尺度下观察到AlGaN/GaN、GaAs/AlGaAs异质结构中由二维电子气(2DEG)自旋流产生的横向霍尔电流(逆自旋霍尔效应),提出了一种测量净自旋流的光电流方法等。

招生信息

下面写的招生专业是“材料物理与化学”,是这网站系统自动生成的,其实我很想把它改成 “凝聚态物理”。然而更重要的是,不管是你是什么专业,如果你有独立钻研精神,实验动手能力或者理论计算能力强,对物理研究感兴趣,计划以科研为未来职业,欢迎你加入我的研究团队 ^_^ 

招生专业
080501-材料物理与化学
招生方向
半导体材料,半导体光谱技术,半导体自旋电子学