WeiHua HAN

Professor, Ph.D,  Member of Chinese Society of Micro-Nano Technology        
Address: Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Postcode: 100083

Research Areas

1 Silicon nanowires devices

        In the past few decades, following Moore’s Law in the field of integrated circuit technology , the traditional planar CMOS transistors are shrinking  from micron-scale feature size to the nanometer scale. Low-cost, low power, high dense integration drive CMOS process into nanofabrication. It has become a trend that nanoscale COMS transistor structure evolve from planar to three-dimensional nanowire. Silicon-based nanowire transistors has become an hot topics of micro-nanoelectronics . Triple-gate surronding the nanowire shows excellent electric control capability, which is close to the ideal CMOS switching performance . Ultra-fine silicon nanowires can realize fully depleted and effetively suppress short-channel effect . Parrallel nanowires can effectively improve the drive current.
2  Analog CMOS Implementation of a Temporal Coding Pulsed-Coupled Neural Cell

       A compact architecture for voltage-mode pulse-coupled neural cell has been demonstrated by temporal coding analog CMOS circuits combining neurophysiological principles. The physical principles governing ion flow through biological neuron membranes is similar to the conductivity of silicon transistors. The analog of sodium (Na+) and potassium (K+) channels consists of a CMOS inverter chain. The synaptic weights are obtained by the organization of different channel width of multiple-input P-MOSFETs using temporal codes of pulse width modulation. The output pulse stream of neuron circuit carries the weight information on the pulse frequency. The neuron circuit connects each other via adaptive weight circuit, causing the synchronization of neurons in frequency and phase difference.


He was conferred Bachelor Degree of Engineering in 1995 at the department of electronic engineering, Shenyang University of Technology, Master Degree of Sciences in 1998 at the department of electronic engineering, Jilin University and Doctor Degree of Sciences in 2001 in Institute of Semiconductors, Chinese Academy of Sciences. From 2002 to 2004, he worked as a postdoctoral researcher in the field of THz wave detection by single electron transistors in Research Center of Integrated Quantum Electronics, Hokkaido University, Japan.


He has been working in Engineering Research Center of Semiconductor Integrated Technology, Institute of Semiconductors since 2004. He has published more than forty research papers and ten patents. His present research interests are mainly focused on Si-based nanoscale devices and nanofabrication.


[1] Y. B. Zhang, Y. Xiong, X. Yang, W. H. Han, F. H. Yang. Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors, Journal of Nanoscience and Nanotechnology, 10(11), pp. 7113-7116, 2010.
[2] Y. Wang, W. H. Han, X. Yang, R.P. Zhang, Y. Zhang, F.H. Yang, An efficient dose-compensation method for proximity effect correction, Chinese Journal of Semiconductors, 31(8), p.086001, 2010.
[3] Y. Xiong, W. H. Han, K. Zhao, Y. B. Zhang, F. H. Yang,An Analog CMOS Pulse Coupled Neural Network for Image Segmentation,IEEE International Conference on Solid-State and Integrated Circuits Technology Proceedings (ICSICT), Shanghai, China, p.1883-1885, Nov.1-4, 2010.
[4] W. H. Han, X. Yang, Y. B. Zhang, Y. Xiong, Y. Wang, Z.C. Fan, F. H.Yang, Self-limiting oxidation of silicon nanostructure on silicon-on-insulator substrate, Oral report, Session B: Si and Ge Nanowires, 3rd International Conference on One-dimensional Nanomaterials (ICON 2009), Atlanta, USA, Dec. 7-9, 2009.
[5] Y. Zhang, R. P. Zhang, W. H. Han, J. Liu, X. Yang,Y. Wang, C.C. Li, F. H. Yang, Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure, Journal of Semiconductors, 30( 11),p.116001, 2009.
[6] Q.Z. Huang, J. Z. Yu, S.W. Chen, X. J. Xu, W. H. Han, Z.C. Fan, Design, fabrication and characterization of a high-performance microring resonator in silicon-on-insulator, Chinese Physics B, 17 (7), pp. 2562-2566, 2008.
[7] W. H. Han, X. Yang, Y. Wang, F. H. Yang, J. Z. Yu. Fabrication method of silicon nanostructures by anisotropic etching, IEEE 5th Internantional Conference on Group IV Photonics, Sorrento, Italy, p146-148, 17-19 Sept. 2008.
[8] Y. Wang, W. H. Han, X. Yang,J. J. Chen , F. H. Yang, Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors, IEEE 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (ICSICT), Beijing, China, p 393-395, 21-23 Oct.2008.
[9] X. Yang, W. H. Han, Y. Wang, Y. Zhang, F. H. Yang. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography, Journal of Semiconductors, 29(6), p15-19, 2008.
[10] Q.Z. Huang, J. Z. Yu, S.W. Chen, X. J. Xu, W. H. Han, Z.C. Fan, High Q microring resonator in silicon-on-insulator rib waveguides, Proceedings of SPIE - The International Society for Optical Engineering, v 6838, p 68380J, 2008.
[11] W. H. Han, M. Yomoto, S. Kasai, Detection of Terahertz photon by GaAs-based single electron transistor at low temperatures, Chinese Journal of Semiconductors, 28(4), pp. 500-506, 2007.
[12] W. Du, X. S. Xu, W. H. Han, CX Wang , Y. Zhang; F. H. Yang; H.D. Chen, Fabrication of a high quality etching mask for two-dimensional photonic crystal structures, Chinese Journal of Semiconductors, 27(9) pp.1640-4, 2006.
[13] S. Kasai, W. H. Han, M. Yumoto and H. Hasegawa,Terahertz response of Schottky wrap gate-controlled quantum dots, Phys. Stat. Sol. (c)0, No.4, 1329-1332, 2003.



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