基本信息
韩伟华 男 博导 半导体研究所
电子邮件:weihua@semi.ac.cn
通信地址:北京市海淀区清华东路甲35号中科院半导体所集成技术中心
邮政编码:100083

研究领域

1、量子效应硅纳米结构晶体管的研究

    过去的数十年中, CMOS 晶体管特征尺寸遵循摩尔定律从微米尺度向纳米尺度不断缩小,器件性能及其集成度得到持续提升。低成本、低功耗、高集成度仍在持续驱动 CMOS 器件的纳米化进程。随着CMOS器件特征尺寸缩小到10 nm以下,一方面在越来越短的沟道上实现掺杂浓度和类型的突变,变得越来越困难;而另一方面在越来越细的沟道中杂质波动对器件电学性能的影响也越来越大。近10年以来,纳米尺度下掺杂原子对晶体管性能影响的研究不断升温,硅单原子晶体管的概念正在变为现实。杂质在接近原子尺度的局域纳米空间将变得分立,电子通过电离的杂质将表现出显著的量子效应。单原子晶体管代表的是固态器件的最终尺度极限,杂质原子的尺度与2 nm左右的波尔半径相当,杂质原子的数量、分布和电离能都会决定器件的性能。单原子晶体管依赖电离杂质作为量子点工作,是单电子晶体管器件家族中的特殊成员。传统单电子晶体管依赖纳米加工形成的人造库仑岛进行工作,库仑岛由栅电极诱导电势限制或沟道起伏纳米空间限制形成。单原子晶体管中的电离杂质能级位于导带底部附近,电荷输运通过分立的杂质能级,最多容许两个电子通过。栅控电流谱的研究可以揭示电离杂质的许多重要的信息和潜在的应用方向。

2、硅基横向III-V纳米线晶体管的研究

    根据2014年《全球半导体技术发展路线图》,基于硅衬底生长的高迁移率III-V族沟道材料被认为是进一步提升CMOS器件性能的重点。然而,在硅衬底上外延生长III-V族半导体薄膜材料时,晶格失配产生的大量位错会破坏晶体质量,因此必须生长比较厚的缓冲层,严重影响了器件的制备和应用。近年来,高质量的III-V族纳米线不需要缓冲层就可以无位错生长在晶格失配高达12%的硅衬底上。这是因为III-V族纳米线结构与硅衬底接触面积小,可以从纳米线上表面和侧面两个维度释放晶格失配应力和热失配。研究表明,只要纳米线的直径小于某一临界直径,其外延生长就可以无须缓冲层而不受晶格失配的制约。一方面,利用金纳米颗粒催化剂辅助的气-液-固相(VLS)生长技术,将Au纳米颗粒在硅衬底上定位,就可以实现III-V族纳米线定位生长。另一方面,采用电子束曝光、多孔氧化铝模板(AAO)、纳米压印光刻或自组装纳米球光刻等技术在硅介质层表面定义周期孔成核点, 通过自组织生长获得整齐的纳米线阵列,不需要金属催化剂就可以选区生长III-V族纳米线。由于硅基横向III-V纳米线晶体管结构更加适合于逻辑电路的设计和平面工艺制备需求,因此在硅衬底上横向外延生长III-V族纳米线及其晶体管的制备将成为未来信息领域的热点研究课题。

招生信息

招收硕士和博士研究生,具有半导体物理与器件、固体物理和集成电路的专业背景,未来主要从事半导体微纳结构器件物理和电路设计的研究。
招生专业
080903-微电子学与固体电子学
085209-集成电路工程
085208-电子与通信工程
招生方向
半导体纳米器件和电路
新型微电子、光电子器件及其集成技术的研究、开发与应用

教育背景

2002-01--2004-03 日本北海道大学量子电子学中心 博士后
1998-08--2001-07 中国科学院半导体研究所 博士
1995-09--1998-06 吉林大学 硕士
学历
-- 研究生
学位
-- 博士

工作经历

   
工作简历
2004-04--今 中国科学院半导体研究所集成技术中心 研究员

教授课程

半导体微纳器件及其应用 、 半导体微纳加工技术、 半导体微纳器件及其应用、 电子束曝光技术

专利与奖励

   
专利成果
[1] 何玉铭, 韩伟华, 李兆峰, 杨富华, 陈淼. 谐振式陀螺仪光波导芯片及其制备方法. CN: CN110186447B, 2021-04-09.

[2] 杨冲, 韩伟华, 陈俊东, 张晓迪, 郭仰岩, 杨富华. 基于相变材料存储栅的无结硅纳米线晶体管及制备方法. CN: CN112614865A, 2021-04-06.

[3] 张晓迪, 韩伟华. 三维势垒限制的硅基杂质原子晶体管及其制备方法. CN: CN110299400B, 2021-04-06.

[4] 冯佐, 李兆峰, 杨富华, 王晓东, 何玉铭, 韩伟华. 混合集成的氮化硅微环谐振腔及其制备方法. CN: CN111399117B, 2021-02-02.

[5] 赵晓松, 韩伟华, 郭仰岩, 窦亚梅, 张晓迪, 吴歆宇, 杨富华. 一种基于共振隧穿的纳米线晶体管及其制备方法. CN: CN110491940B, 2021-02-02.

[6] 窦亚梅, 韩伟华, 张晓迪, 赵晓松, 郭仰岩, 吴歆宇, 杨富华. 三维空间束缚单杂质原子晶体管及其制备方法. CN: CN111223923B, 2021-01-15.

[7] 吴歆宇, 韩伟华, 杨富华. 基于硅纳米晶粒束缚的杂质原子晶体管及其制备方法. CN: CN110148622B, 2020-12-15.

[8] 何玉铭, 韩伟华, 李兆峰, 颜伟, 王晓东, 杨富华. 气体传感器及其制备方法. CN: CN109709069B, 2020-10-23.

[9] 郭仰岩, 韩伟华, 窦亚梅, 赵晓松, 杨富华. 杂质原子阵列晶体管及其制备方法. CN: CN110085673B, 2020-10-02.

[10] 窦亚梅, 韩伟华, 郭仰岩, 赵晓松, 杨富华. 硅晶面依赖的纳米结构晶体管及制备方法. CN: CN109962107A, 2019-07-02.

[11] 洪文婷, 韩伟华, 吕奇峰, 杨富华. 基于SOI衬底的横向纳米线叉指结构晶体管及制备方法. CN: CN104992972B, 2017-10-24.

[12] 吕奇峰, 韩伟华, 洪文婷, 杨富华. SOI叉指结构衬底Ⅲ‑Ⅴ族材料沟道薄膜晶体管及制备方法. CN: CN105070763B, 2017-10-03.

[13] 张望, 韩伟华, 赵晓松, 杨富华. III‑V族化合物横向纳米线结构,纳米线晶体管及其制备方法. CN: CN106898641A, 2017-06-27.

[14] 王昊, 韩伟华, 马刘红, 杨富华. 一种无结晶体管的电阻测试方法. CN: CN103575998B, 2016-05-11.

[15] 韩伟华, 王昊, 马刘红, 洪文婷, 杨晓光, 杨涛, 杨富华. 硅基横向纳米线多面栅晶体管及其制备方法. CN: CN103311305B, 2016-01-20.

[16] 马刘红, 韩伟华, 付英春, 洪文婷, 吕奇峰, 杨富华. 一种围栅无结纳米线晶体管的制备方法. CN: CN105185823A, 2015-12-23.

[17] 洪文婷, 韩伟华, 吕奇峰, 杨富华. 基于SOI衬底的Ⅲ-V族纳米线平面晶体管及制备方法. CN: CN104934479A, 2015-09-23.

[18] 王昊, 韩伟华, 杨富华. 基于SOI衬底的单杂质原子无结硅纳米线晶体管及制备方法. CN: CN104867834A, 2015-08-26.

[19] 韩伟华, 杨晓光, 杨涛, 王昊, 洪文婷, 杨富华. 硅基III-V族纳米线选区横向外延生长的方法. CN: CN103346070B, 2015-08-05.

[20] 韩伟华, 陈艳坤, 李小明, 杨富华. 聚光硅纳米孔阵列结构太阳能电池及其制备方法. CN: CN102610665B, 2014-04-09.

[21] 陈燕坤, 韩伟华, 洪文婷, 杨富华. 纳米孔与金属颗粒复合陷光结构太阳能电池及制备方法. CN: CN103219411A, 2013-07-24.

[22] 韩伟华, 熊莹, 赵凯, 杨香, 张严波, 王颖, 杨富华. 基于脉冲耦合的硅纳米线CMOS神经元电路. CN: CN101997538B, 2013-06-05.

[23] 李小明, 韩伟华, 张严波, 颜伟, 杜彦东, 陈燕坤, 杨富华. 一种基于体硅材料的无结硅纳米线晶体管及其制备方法. CN: CN102916048A, 2013-02-06.

[24] 张严波, 韩伟华, 杜彦东, 李小明, 陈艳坤, 杨香, 杨富华. 半导体晶体管结构及其制造方法. CN: CN102280454B, 2013-02-06.

[25] 韩伟华, 陈燕坤, 李小明, 张严波, 杜彦东, 杨富华. 硅纳米线光栅谐振增强型光电探测器及其制作方法. CN: CN102201483B, 2012-10-03.

[26] 熊莹, 韩伟华, 杨富华. 具有图像分割功能的脉冲耦合神经网络的实现电路. CN: CN101916393B, 2012-09-26.

[27] 杜彦东, 韩伟华, 颜伟, 张严波, 杨富华. SiO 2 /SiN双层钝化层T型栅AlGaN/GaN HEMT及制作方法. 中国: CN102437182A, 2012-05-02.

[28] 韩伟华, 熊莹, 张严波, 赵凯, 杨富华. 一种利用时间编码控制权重和信息整合的方法. CN: CN101860357B, 2012-04-11.

[29] 颜伟, 杜彦东, 韩伟华, 杨富华. 利用光子束超衍射技术制备半导体T型栅电极的方法. CN: CN102157361B, 2012-03-21.

[30] 王 颖, 韩伟华, 杨 香, 张 杨, 杨富华. 环形孔阵列结构的二维光子晶体的制作方法. CN: CN101470347B, 2011-10-26.

[31] 韩伟华, 杨 香. 具有双量子点接触结构的硅基单电子器件及其制作方法. CN: CN101359683B, 2011-05-04.

[32] 韩伟华, 杨 香. 围栅控制结构的硅基单电子晶体管及其制作方法. CN: CN101359684B, 2010-06-23.

[33] 杨香, 韩伟华, 王颖, 张杨, 杨富华. 依赖晶面的三维限制硅纳米结构的制备方法. CN: CN101723312A, 2010-06-09.

[34] 韩伟华. 硅基单电子神经元量子电路. CN: CN101364594B, 2010-06-02.

[35] 韩伟华, 杨 香, 吴南健. 一种具有侧栅结构的硅基单电子记忆存储器及其制作方法. CN: CN100468748C, 2009-03-11.

[36] 韩伟华, 张 扬, 刘 剑, 杨富华. 通过注氧进行量子限制的硅基单电子晶体管. CN: CN100409454C, 2008-08-06.

出版信息

   
发表论文
[1] Zhao, Shuai, Yuan, Guodong, Zhang, Di, Wu, Xingjun, Han, Weihua. Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2022, 138: http://dx.doi.org/10.1016/j.mssp.2021.106308.
[2] Liu, Yang, Huang, Xingrui, Guan, Huan, Yu, Zhiguo, Wei, Qingquan, Fan, Zhongchao, Han, Weihua, Li, Zhiyong. C-band four-channel CWDM (de-)multiplexers on a thin film lithium niobate-silicon rich nitride hybrid platform. OPTICS LETTERS[J]. 2021, 46(19): 4726-4729, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000702746400005.
[3] He, Yuming, Lu, Ziqing, Kuai, Xuebao, Feng, Zuo, Han, Weihua, Li, Zhaofeng, Yan, Wei, Yang, Fuhua. Heterogeneous integration of InP and Si3N4 waveguides based on interlayer coupling for an integrated optical gyroscope. APPLIED OPTICS[J]. 2021, 60(3): 662-669, https://www.webofscience.com/wos/woscc/full-record/WOS:000609948100023.
[4] Han Weihua. Observation of the influence of Source and Drain Voltage on the quantum transport spectrum in junctionless silicon nanowire transistor. Chinese Phys. B,in press https://doi.org/10.1088/1674-1056/ac21ba. 2021, [5] Han Weihua. Heterogeneous integration of InP and SiN waveguides based on interlayer coupling for an integrated optical gyroscope. Applied Optics, Vol.60, No.3,662. 2021, [6] Han Weihua. On-chip four-mode division (de-)multiplexer on thin film lithium niobate-silicon rich nitride hybrid platform. Optics Letters,Vol. 46, No. 13,3179. 2021, [7] Xinyu Wu, Weihua Han, Xiaosong Zhao, Yangyan Guo, Xiaodi Zhang, Fuhua Yang. Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors. 半导体学报:英文版[J]. 2020, 41(7): 44-48, http://lib.cqvip.com/Qikan/Article/Detail?id=7102257017.
[8] Feng, Zuo, He, Yuming, Yan, Wei, Yang, Fuhua, Han, Weihua, Li, Zhaofeng. Progress of Waveguide Ring Resonators Used in Micro-Optical Gyroscopes. PHOTONICSnull. 2020, 7(4): https://doaj.org/article/2e2a68f73f304f2c93d89d6f65c856ee.
[9] Chen JunDong, Han WeiHua, Yang Chong, Zhao XiaoSong, Guo YangYan, Zhang XiaoDi, Yang FuHua. Recent research progress of ferroelectric negative capacitance field effect transistors. ACTA PHYSICA SINICAnull. 2020, 69(13): http://dx.doi.org/10.7498/aps.69.20200354.
[10] 韩伟华. 相变材料Ge2Sb2Te5的性质及其面向新型数据存储的应用 (上). 微纳电子技术, Vol. 57, No.5, 341-348. 2020, [11] Ma, LiuHong, Han, WeiHua, Yang, FuHua. Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors. CHINESE PHYSICS B[J]. 2020, 29(3): 436-441, http://lib.cqvip.com/Qikan/Article/Detail?id=7101214722.
[12] Liu, Yang, Huang, Xingrui, Li, Zezheng, Guan, Huan, Wei, Qingquan, Fan, Zhongchao, Han, Weihua, Li, Zhiyong. Efficient grating couplers on a thin film lithium niobate-silicon rich nitride hybrid platform. OPTICS LETTERS[J]. 2020, 45(24): 6847-6850, http://dx.doi.org/10.1364/OL.413246.
[13] Li, Zezheng, Huang, Xingrui, Liu, Yang, Kuang, Yingxin, Guan, Huan, Tian, Lifei, Li, Zhiyong, Han, Weihua. Ultra-compact low-loss variable-ratio 1x2 power splitter with ultra-low phase deviation based on asymmetric ladder-shaped multimode interference coupler. OPTICS EXPRESS[J]. 2020, 28(23): 34137-34146, https://www.webofscience.com/wos/woscc/full-record/WOS:000589869600031.
[14] 陈俊东, 韩伟华, 杨冲, 赵晓松, 郭仰岩, 张晓迪, 杨富华. 铁电负电容场效应晶体管研究进展. 物理学报[J]. 2020, 69(13): 224-252, http://lib.cqvip.com/Qikan/Article/Detail?id=7102215458.
[15] Han Weihua. Ultra-compact low-loss variable-ratio 1*2 power splitter with ultra-low phase deviation based on asymmetric ladder-shapped multimode interference coupler. Optics Express 28(23):34137-34146. 2020, [16] Li, ZeZheng, Han, WeiHua, Li, ZhiYong. Unitary transformation of general nonoverlapping-image multimode interference couplers with any input and output ports. CHINESE PHYSICS B[J]. 2020, 29(1): 287-292, http://lib.cqvip.com/Qikan/Article/Detail?id=7101029359.
[17] Han Weihua. Low temperature electric field dependent mobility of the current oscillation regime in silicon junctionless nanowire transistor. IEEE International Conference on Solid-State and-Integrated Circuits Technology Proceedings (ICSICT), Kunming, Nov.3-6, p.186-189. 2020, [18] 杨冲, 韩伟华, 陈俊东, 张晓迪, 郭仰岩, 杨富华. 相变材料Ge2Sb2Te5的性质及其面向新型数据存储的应用. 微纳电子技术. 2020, 57(5): 341-348, http://lib.cqvip.com/Qikan/Article/Detail?id=7101876898.
[19] Kuang, Yingxin, Huang, Xingrui, Jiang, Rui, Guan, Huan, Wei, Qingquan, Han, Weihua, Li, Zhiyong, Wang, H. Design of high efficiency ITO phase/intensity modulator based on ultra-thin silicon strip waveguide. ELEVENTH INTERNATIONAL CONFERENCE ON INFORMATION OPTICS AND PHOTONICS (CIOP 2019)null. 2019, 11209: [20] Guo Yangyan, Han Weihua, Zhao Xiaosong, Dou Yamei, Zhang Xiaodi, Wu Xinyu, Yang Fuhua. Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors. 中国物理B[J]. 2019, 517-522, http://lib.cqvip.com/Qikan/Article/Detail?id=7003036361.
[21] Kuang, Yingxin, Liu, Yang, Tian, Lifei, Han, Weihua, Li, Zhiyong. A Dual-Slot Electro-Optic Modulator Based on an Epsilon-Near-Zero Oxide. IEEE PHOTONICS JOURNAL[J]. 2019, 11(4): https://doaj.org/article/77327cde7acf4628a89fc4c370e34585.
[22] Dou, YaMei, Han, WeiHua, Guo, YangYan, Zhao, XiaoSong, Zhang, XiaoDi, Wu, XinYu, Yang, FuHua. Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor. CHINESE PHYSICS B[J]. 2019, 28(6): http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574854485350.
[23] He, Yu Ming, Yang, Fu Hua, Yan, Wei, Han, Wei Hua, Li, Zhao Feng. Asymmetry Analysis of the Resonance Curve in Resonant Integrated Optical Gyroscopes. Sensors[J]. 2019, 19(15): https://doaj.org/article/92291c93143342dfb81884ef05819fd6.
[24] Li, Zezheng, Kuang, Yingxin, Guan, Huan, Liu, Yang, Zhang, Xinqun, Han, Weihua, Li, Zhiyong. Compact Low-Loss Optical 72 degrees Hybrid Based on Nonoverlapping-Image Multimode Interference Coupler in Silicon-on-Insulator. IEEE PHOTONICS JOURNAL[J]. 2019, 11(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000575108400001.
[25] Kuang, Yingxin, Li, Zezheng, Liu, Yang, Huang, Xingrui, Guan, Huan, Han, Weihua, Li, Zhiyong, IEEE. Low Voltage 40-Gb/s Ge PIN Photodetector. 2019 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP)null. 2019, [26] Guo, YangYan, Han, WeiHua, Zhao, XiaoSong, Dou, YaMei, Zhang, XiaoDi, Wu, XinYu, Yang, FuHua. Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors. CHINESE PHYSICS B[J]. 2019, 28(10): http://lib.cqvip.com/Qikan/Article/Detail?id=7003036361.
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[99] 杨香, 韩伟华, 王颖, 张杨, 杨富华. 利用电子束光刻制备晶面依赖的硅纳米结构. 半导体学报. 2008, 29(6): 1057-1061, http://lib.cqvip.com/Qikan/Article/Detail?id=27516626.
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[101] Huang QingZhong, Yu JinZhong, Chen ShaoWu, Xu XueJun, Han WeiHua, Fan ZhongChao. Design, fabrication and characterization of a high-performance microring resonator in silicon-on-insulator. CHINESE PHYSICS B[J]. 2008, 17(7): 2562-2566, http://lib.cqvip.com/Qikan/Article/Detail?id=27748951.
[102] 黄庆忠, 余金中, 陈少武, 徐学俊, 韩伟华, 樊中朝. Design, fabrication and characterization of a high-performance microring resonator in silicon-on-insulator. 中国物理:英文版. 2008, 17(7): 2562-2566, http://lib.cqvip.com/Qikan/Article/Detail?id=27748951.
[103] Yang Xiang, Han Weihua, Wang Ying, Zhang Yang, Yang Fuhua. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography. 半导体学报[J]. 2008, 29(6): 1057-1061, http://ir.semi.ac.cn/handle/172111/16041.
[104] 韩伟华, 汤圆美树, 葛西诚也. GaAs基单电子晶体管低温探测THz光子的研究. 半导体学报. 2007, 28(4): 500-506, http://lib.cqvip.com/Qikan/Article/Detail?id=24217834.
[105] 韩伟华. GaAs基单电子晶体管低温探测THz光子的研究(英文). 半导体学报. 2007, http://kns.cnki.net/KCMS/detail/detail.aspx?QueryID=0&CurRec=1&recid=&FileName=BDTX200704007&DbName=CJFD2007&DbCode=CJFQ&yx=&pr=&URLID=&bsm=QK0101;.
[106] Han Weihua, Yomoto M, Kasai S. Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures. 半导体学报[J]. 2007, 28(4): 500-506, http://ir.semi.ac.cn/handle/172111/16319.
[107] 韩伟华, 樊中朝, 杨富华. 微纳加工技术在光电子领域的应用. 物理. 2006, 35(1): 51-55, http://lib.cqvip.com/Qikan/Article/Detail?id=21073442.
[108] Han Weihua. Fabrication of a high quality etching mask for two-dimensional photonic crystal structures. Chinese Journal of Semiconductors. 2006, [109] 杜伟, 许兴胜, 韩伟华, 王春霞, 张杨, 杨富华, 陈弘达. 高质量二维光子晶体结构刻蚀掩膜版的制作方法. 半导体学报. 2006, 27(9): 1640-1644, http://lib.cqvip.com/Qikan/Article/Detail?id=22775342.
[110] 张杨, 韩伟华, 杨富华. 硅基单电子晶体管的制备. 微纳电子技术[J]. 2006, 43(2): 73-79, http://lib.cqvip.com/Qikan/Article/Detail?id=21081709.
[111] Seiya Kasai, Weihua Han, Miki Yumoto, Hideki Hasegawa. Terahertz response of Schottky wrap gate‐controlled quantum dots. 2003, http://kns.cnki.net/KCMS/detail/detail.aspx?QueryID=0&CurRec=1&recid=&FileName=SJWD9829303A1B4006E1FE324664BDB622C0&DbName=SJWDLAST&DbCode=SJWD&yx=&pr=&URLID=&bsm=.
[112] 韩伟华, 余金中. 硅片键合过程中的接触面积. 飞通光电子技术. 2002, 2(1): 31-35, http://lib.cqvip.com/Qikan/Article/Detail?id=12248089.
[113] 余金中, 韩伟华. 硅片接触表面的弹性形变范围. 半导体光电. 2001, 22(6): 440-442, http://lib.cqvip.com/Qikan/Article/Detail?id=5847417.
[114] 韩伟华, 余金中. 硅片发生室温键合所需的平整度条件. 半导体学报. 2001, 22(12): 1516-1518, http://lib.cqvip.com/Qikan/Article/Detail?id=5777141.
[115] Han Weihua. A thermodynamic model on hydrogen-induced silicon surface layer cleavage. Journal of Applied Physics. 2001, [116] 韩伟华, 余金中. 智能剥离工艺的热动力学模型. 半导体学报. 2001, 22(7): 821-825, http://lib.cqvip.com/Qikan/Article/Detail?id=5386595.
[117] 余金中, 韩伟华. 智能剥离工艺的热动力学模型(英文). 半导体学报[J]. 2001, 22(7): 821-, http://ir.semi.ac.cn/handle/172111/18667.
[118] 韩伟华, 余金中. 低温键合技术. 飞通光电子技术. 2001, 1(2): 68-70, http://lib.cqvip.com/Qikan/Article/Detail?id=5770719.
[119] 余金中, 王启明, 韩伟华. 直接键合硅片界面键合能的理论分析. 半导体学报. 2001, 22(2): 140-144, http://lib.cqvip.com/Qikan/Article/Detail?id=4859076.
[120] 韩伟华. 硅基键合技术的理论和工艺研究. 2001, http://ir.semi.ac.cn/handle/172111/5043.
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发表著作
(1) 走向量子鳍式场效应晶体管,Toward Quantum FinFET,Springer,2013-12,第1作者

科研活动

   
科研项目
(1) 基于低能场发射电子的三维微纳加工与原位测量系统,参与,国家级,2014-01--2018-10
(2) 硅基III-V族纳米线选区横向生长及其高迁移率3D晶体管研究,主持,国家级,2014-01--2017-12
(3) 纳米器件制备工艺创新与应用基础研究,主持,国家级,2010-01--2014-08
参与会议
(1) Analog CMOS pulse-coupled neuron circuit with multipath-switching device,2012-10,Weihua Han*, Ying Xiong, Kai Zhao, Yanbo Zhang, Fuhua Yang
(2) An Analog CMOS Pulse Coupled Neural Network for Image Segmentation,2010-11,Y. Xiong, W.H. Han
(3) Self-limiting oxidation of silicon nanostructure on silicon-on-insulator substrate ,2009-12,WH Han
(4) Fabrication method of silicon nanostructures by anisotropic etching,2008-09,WH Han

指导学生

已指导学生

熊莹  硕士研究生  080903-微电子学与固体电子学  

杜彦东  硕士研究生  080903-微电子学与固体电子学  

陈燕坤  硕士研究生  080903-微电子学与固体电子学  

李小明  硕士研究生  430110-集成电路工程  

洪文婷  硕士研究生  080903-微电子学与固体电子学  

现指导学生

吕奇峰  硕士研究生  085208-电子与通信工程  

王昊  博士研究生  080903-微电子学与固体电子学  

张望  硕士研究生  080903-微电子学与固体电子学  

赵晓松  硕士研究生  080903-微电子学与固体电子学