• Device Physics&Effects

• Simulation&Computing

• Integration Design

• Advanced materials

2009-2013 UESTC，China， Bachelor Degree

2013-2016 UCAS，China，Master Degree

2016-2019 NUS，Singpoare，Doctoral Degree

Dr. Wang received the B.S. degree in Microelectronics from University of Electronic Science and Technology of China (UESTC) in 2013, M.S. degree in Key Laboratory of Microelectronics Devices and Integrated Technology of IME-CAS && Microelectronics from University of Chinese Academy of Sciences (UCAS) in 2016, and the Ph.D. degree in Computational Nanoelectronics and Emerging Devices Group of ECE department from National University of Singapore (NUS) in 2019 thereafter, he was a Research Fellow in the Lab of Hybrid Integrated Flexible Electronic Systems of ECE department from NUS. Currently, he is a professor in IME-CAS, Beijing, China, and Adjunct Prof. in Peng Cheng Lab., Shenzhen, China. 

He has been involved in advanced material and device modeling for novel integration technology over 8 years. His model and simulation works have been employed for a-IGZO-TFTs, 2D-FETs, GAA-Nanosheet-FETs, Ferroelectric devices, Memristors, and Power devices, with a description of quantum potential, transport mechanism, multi-domain for ferroelectric material, disorder physics, temperature dependence and ultra-scaled behaviors etc., highlighting applications of hybrid simulation with advanced BEOL/FEOL compatible devices for monothetic 3D integration circuit, contributing to 34 journal/proceeding publications on IEEE TED, IEEE EDL, IEEE VLSI-Tech., IEEE IEDM, SISPAD, APL, JAP, Adv. Electron. Mater., ACS Nano etc. Besides, he is an IEEE EDS member as well as an active reviewer for EDL, TED, APA, etc. His recent research interest is advanced BEOL-device-technology (IGZO) for memory and logic applications, cooperating with leading institutes or companies.

2019-2020 NUS Research Fellow

2021-Today IME-CAS，UCAS，China，Full-time Professor&Researcher

[1] Lihua Xu, Jingrui Guo, Chen Sun, Zijie Zheng, Yannan Xu, Shijie Huang, Kaizhen Han, Wei Wei, Zean Guo, Xiao Gong, Qing Luo, Lingfei Wang* and Ling Li,  in IEEE Electron Device Letters, 2023.                 

[2] Jingrui Guo, Ying Sun, Lingfei Wang*, Xinlv Duan, Kailiang Huang, Zhaogui Wang, Junxiao Feng, Qian Chen, Shijie Huang, Lihua Xu, Di Geng, Guangfan Jiao, Shihui Yin, Zhengbo Wang, Weiliang Jing*, Ling Li* and Ming Liu,  2022 IEEE Symposium on VLSI Technology and Circuits, 2022, pp. 300-301. 

[3] Shijie Huang, Zhenhua Wu, Haoqing Xu, Jingrui Guo, Lihua Xu, Xinlv Duan, Qian Chen, Guanhua Yang, Qingzhu Zhang, Huaxiang Yin, Lingfei Wang*, Ling Li* and Ming Liu,  in 2021 IEEE International Electron Devices Meeting (IEDM), 2021, pp. 18.5. 1-18.5. 4.                 

[4] Jingrui Guo, Kaizhen Han, Subhali Subhechha, Xinlv Duan, Qian Chen Di Geng, Shijie Huang, Lihua Xu, Junjie An, Gouri Sankar Kar, Xiao Gong, Lingfei Wang*, Ling Li*, Ming Liu, in 2021 IEEE International Electron Devices Meeting (IEDM), 2021, pp. 8.5. 1-8.5. 4.                     

[5] Ying Zhao，Lingfei Wang*, Zhenhua Wu, Franz Schanovsky Xiaoxin Xu, Hong Yang, Hao Yu, Jinru Lai, Donyang Liu, Xichen Chuai, Yue Su, Xingsheng Wang, Ling Li* and Ming Liu*. In 2021 IEEE Symposium on VLSI Technology and Circuits, pp. 1-2. IEEE, 2021.       

[6] Lingfei Wang, Lin Wang, Kah-Wee Ang, Aaron Thean, and Gengchiau Liang,  in 2018 IEEE International Electron Devices Meeting (IEDM), 2018, pp. 24.5. 1-24.5. 4.                                 

[7] Lingfei Wang, Yang Li, Xiao Gong, Aaron Voon-Yew Thean, and Gengchiau Liang,  IEEE Electron Device Letters, vol. 39, no. 5, pp. 761-764, 2018.      

[8] Lingfei Wang, Yang Li, Xuewei Feng, Kah-Wee Ang, Xiao Gong, Aaron Thean, and Gengchiau Liang, in 2017 IEEE International Electron Devices Meeting (IEDM), 2017, pp. 31.4. 1-31.4. 4.

[9] Lingfei Wang, Wei Wang, Guangwei Xu, Zhuoyu Ji, Nianduan Lu, Ling Li, and Ming Liu,  Applied Physics Letters, vol. 108, no. 1, pp. 013503, 2016.

[10] Lingfei Wang, Songang Peng, Zhiwei Zong, Ling Li, Wei Wang, Guangwei Xu, Nianduan Lu, Zhuoyu Ji, Zhi Jin, and Ming Liu,  in 2015 IEEE International Electron Devices Meeting (IEDM), 2015, pp. 28.4. 1-28.4. 4.