------【后摩尔EDA器件模型与集成设计方法研究】--------

|--------面向新材料、新器件、新集成多元化的EDA---------

|新型先进器件特性研究：IGZO-FET、2D-FET、GAA-FET、TFT等

|器件模型与集成设计：器件模型开发与EDA集成电路设计方法

|制造端EDA器件仿真工具研究：多尺度、多物理、TCAD仿真

|----------器件物理：可靠性机理与传输机理研究-----------

|缺陷物理与可靠性：器件可靠性（如HCL、BTI等）与传输机理

|---------兼容M3D异质集成芯片（DRAM）集成设计-----------

|协同设计方法研究：以模型为核心的器件-电路协同设计方法

|-------------------------------------------------------

每年招收2名硕士或1硕1博

080903-微电子学与固体电子学
080902-电路与系统
080901-物理电子学

后摩尔器件模型及可靠集成方法
新型器件物理与TCAD方法，多尺度与多物理仿真
EDA新架构电路仿真与异质集成设计

2016-08--2019-08   新加坡国立大学   博士学位
2013-09--2016-07   中国科学院微电子研究所   硕士学位
2009-09--2013-07   电子科技大学   学士学位

   

2022-03~现在, 中国科学院微电子研究所, 研究员
2021-01~2022-03,中国科学院微电子研究所, 副研究员
2019-11~2020-11,新加坡国立大学, 博士后研究员（Reseach Fellow）

   

[1] 徐光伟, 韩志恒, 王伟, 陆丛研, 汪令飞, 李泠, 刘明. 一种获取平面型器件的接触电阻的方法. CN: CN105510717A, 2016-04-20.
[2] 汪令飞, 王伟, 徐光伟, 李泠, 刘明, 卢年端. 石墨烯晶体管的小信号模型的截止频率的计算方法. CN: CN105224717A, 2016-01-06.

   

[1] Kai Zhou, Songming Miao, Xuanze Zhou, Guangwei Xu, 汪令飞, Shibing Long. A core drain current model for β-Ga2O3 power MOSFETs based on surface potential. AIP Advances[J]. 2023, 第 5 作者  通讯作者  
[2] Shijie huang, 汪令飞. MOSFET Physics-Based Compact Model Mass-Produced: An Artificial Neural Network Approach. Mircromechines[J]. 2023, 第 2 作者  通讯作者  
[3] Kai Zhou, Songming Miao, Xuanze Zhou, Guangwei Xu, 汪令飞, Shibing Long. A core drain current model for ��-Ga2O3 power MOSFETs based on surface potential. AIP Advances[J]. 2023, 第 11 作者
[4] Shijie huang, 汪令飞. MOSFET Physics-Based Compact Model Mass-Produced: An Artificial Neural Network Approach. Mircromechines[J]. 2023, 第 11 作者
[5] Lihua Xu, Jingrui Guo, Chen Sun, Zijie Zheng, Yannan Xu, Shijie Huang, Kaizhen Han, Wei Wei, Zean Guo, Xiao Gong, Qing Luo, 汪令飞, Ling Li. A Surface Potential Based Compact Model for Ferroelectric a-InGaZnO-TFTs Toward Temperature Dependent Device Characterization. IEEE EDL[J]. 2023, 第 11 作者
[6] Jingrui Guo, Ying Sun, 汪令飞, Xinlv Duan, Kailiang Huang, Zhaogui Wang, Junxiao Feng, Qian Chen, Shijie Huang, Lihua Xu, Di Geng, Guangfan Jiao, Shihui Yin, Zhengbo Wang, Weiliang Jing, Ling Li, Ming Liu. Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2022, 第 3 作者  通讯作者  
[7] Kaifei Chen, Jiebin Niu, Guanhua Yang, Menggan Liu, Wendong Lu, Fuxi Liao, Kailiang Huang, XinLv Duan, Congyan Lu, Jiawei Wang, Lingfei Wang,Mengmeng Li, Di Geng, Chao Zhao, Guilei Wang, Nianduan Lu,, Ling Li, Ming Liu. Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2022, 
[8] Yaxin Ding, Junjie An, Jiabin Shen, Shujing Jia, Jingrui Guo, Lingfei Wang, Tiancheng Gong, Pengfei Jiang, Yuan Wang, Yuting Chen, Min Zhu, Chunmeng Dou, Qing Luo. Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory. Advanced Electronic Materials[J]. 2022, 
[9] Shijie Huang, Jingrui Guo, Lihua Xu, 汪令飞, Ling Li. Physics-based 2-D analytical potential model with disorder effects for scaling a-IGZO TFT via dual material gate engineering. Japanese Journal of Applied Physics[J]. 2022, 第 4 作者  通讯作者  
[10] Yu Yong, Jing Liang, Nan Yang, De-Yuan Xiao, Jian-Peng Jiang, Jing-Rui Guo, Ling-Fei Wang, Di Geng, Lan-Song Ba, Hong-Gang Liang, Ya-Nan Lu, Dan Wang, Yu-Ke Li, Xiao-Ming Yin, Long Huang, Jiang-Liu Shi, Gui-Lei Wang, Yan-Zhe Tang, Hong-Wen Li, Bryan Kang, Abraham Yoo, Kan-Yu Cao, Ling Li, Chao Zhao. Using compact model to verify IGZO RO performance for engineering application. 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). 2022, 
[11] Chen, Qian, Wang, Lingfei, Duan, Xinlv, Guo, Jingrui, Wang, Zhaogui, Huang, Kailiang, Feng, Junxiao, Sun, Ying, Jiao, Guangfan, Jing, Weiliang, Geng, Di, Li, Ling. Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2022, 第 2 作者43(6): 894-897, http://dx.doi.org/10.1109/LED.2022.3168059.
[12] Jingrui Guo, Ying Sun, 汪令飞, Xinlv Duan, Kailiang Huang, Zhaogui Wang, Junxiao Feng, Qian Chen, Shijie Huang, Lihua Xu, Di Geng, Guangfan Jiao, Shihui Yin, Zhengbo Wang, Weiliang Jing, Ling Li, Ming Liu. Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2022, 第 11 作者
[13] Kaifei Chen, Jiebin Niu, Guanhua Yang, Menggan Liu, Wendong Lu, Fuxi Liao, Kailiang Huang, XinLv Duan, Congyan Lu, Jiawei Wang, Lingfei Wang,Mengmeng Li, Di Geng, Chao Zhao, Guilei Wang, Nianduan Lu, Ling Li, Ming Liu. Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 ��S/��m at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 2022, 
[14] Yaxin Ding, Junjie An, Jiabin Shen, Shujing Jia, Jingrui Guo, Lingfei Wang, Tiancheng Gong, Pengfei Jiang, Yuan Wang, Yuting Chen, Min Zhu, Chunmeng Dou, Qing Luo. Low���Voltage and High Thermal Stability Single���Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross���Point Memory. Advanced Electronic Materials[J]. 2022, 
[15] Shijie Huang, Jingrui Guo, Lihua Xu, 汪令飞, Ling Li. Physics-based 2-D analytical potential model with disorder effects for scaling a-IGZO TFT via dual material gate engineering. Japanese Journal of Applied Physics[J]. 2022, 第 11 作者
[16] Yu Yong, Jing Liang, Nan Yang, De-Yuan Xiao, Jian-Peng Jiang, Jing-Rui Guo, Ling-Fei Wang, Di Geng, Lan-Song Ba, Hong-Gang Liang, Ya-Nan Lu, Dan Wang, Yu-Ke Li, Xiao-Ming Yin, Long Huang, Jiang-Liu Shi, Gui-Lei Wang, Yan-Zhe Tang, Hong-Wen Li, Bryan Kang, Abraham Yoo, Kan-Yu Cao, Ling Li, Chao Zhao. Using compact model to verify IGZO RO performance for engineering application. 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). 2022, 
[17] Chen, Qian, Wang, Lingfei, Duan, Xinlv, Guo, Jingrui, Wang, Zhaogui, Huang, Kailiang, Feng, Junxiao, Sun, Ying, Jiao, Guangfan, Jing, Weiliang, Geng, Di, Li, Ling. Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2022, 第 2 作者43(6): 894-897, http://dx.doi.org/10.1109/LED.2022.3168059.
[18] Shijie Huang, Zhenghua Wu, Haoqing Xu, Jingrui Guo, Lihua Xu, XinLv Duan, Qian Chen, Guanhua Yang, Qingzhu Zhang, Huaxiang Yin, 汪令飞, Ling Li, Ming Liu. Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs. IEEE International Electron Devices Meeting (IEDM). 2021, 第 11 作者  通讯作者  
[19] 刘金杨, 周凯, 徐光伟, 汪令飞, 李泠, 龙世兵. 功率二极管模型. 微纳电子与智能制造[J]. 2021, 第 4 作者3(1): 150-158, http://lib.cqvip.com/Qikan/Article/Detail?id=7106009190.
[20] Jingrui Guo, Kaizhen Han, Subhali Subhechha, Xinlv Duan, Qian Chen, Di Geng, Shijie Huang, Lihua Xu, Junjie An, Gouri Sankar Kar, Xiao Gong, 汪令飞, Ling Li, Ming Liu. A new surface potential and physics based compact model for a-IGZO TFTs at multinanoscale for high retention and low-power DRAM application. IEEE International Electron Devices Meeting (IEDM). 2021, 第 2 作者  通讯作者  
[21] Ying Zhao, 汪令飞, Zhenhua Wu, Franz Schanovsky, 许晓欣, Hong Yang, Lai, jinru, Donyang Liu, Xichen Chuai, Yue Su, Xingsheng Wang, Ling Li, Ming Liu. A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes. Symposium on VLSI Technology,. 2021, 第 2 作者  通讯作者  
[22] Feng, Xuewei, Li, Sifan, Wong, Swee Liang, Tong, Shiwun, Chen, Li, Zhang, Panpan, Wang, Lingfei, Fong, Xuanyao, Chi, Dongzhi, Ang, KahWee. Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing. ACS NANO[J]. 2021, 第 7 作者15(1): 1764-1774, http://dx.doi.org/10.1021/acsnano.0c09441.
[23] 刘孟淦, 陆丛研, 杨冠华, Weizhuo Gan, 彭松昂, zhenhua wu, Jiebin Niu, Jiawei Wang, 汪令飞, Mengmeng Li, Di Geng, 卢年端, Wei Cao, Deji Akinwande, Ling Li, Ming Liu. Analog Monolayer MoS2 Transistor with Record-high Intrinsic Gain (> 100 dB) and Ultra-low Saturation Voltage (< 0.1 V) by Source Engineering. 2021 Symposium on VLSI Technology. 2021, 第 9 作者
[24] Shijie Huang, Zhenghua Wu, Haoqing Xu, Jingrui Guo, Lihua Xu, XinLv Duan, Qian Chen, Guanhua Yang, Qingzhu Zhang, Huaxiang Yin, 汪令飞, Ling Li, Ming Liu. Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs. IEEE International Electron Devices Meeting (IEDM). 2021, 第 11 作者
[25] 刘金杨, 周凯, 徐光伟, 汪令飞, 李泠, 龙世兵. ���������������������. 微纳电子与智能制造[J]. 2021, 第 4 作者3(1): 150-158, http://lib.cqvip.com/Qikan/Article/Detail?id=7106009190.
[26] Jingrui Guo, Kaizhen Han, Subhali Subhechha, Xinlv Duan, Qian Chen, Di Geng, Shijie Huang, Lihua Xu, Junjie An, Gouri Sankar Kar, Xiao Gong, 汪令飞, Ling Li, Ming Liu. A new surface potential and physics based compact model for a-IGZO TFTs at multinanoscale for high retention and low-power DRAM application. IEEE International Electron Devices Meeting (IEDM). 2021, 第 11 作者
[27] Feng, Xuewei, Li, Sifan, Wong, Swee Liang, Tong, Shiwun, Chen, Li, Zhang, Panpan, Wang, Lingfei, Fong, Xuanyao, Chi, Dongzhi, Ang, KahWee. Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing. ACS NANO[J]. 2021, 第 7 作者15(1): 1764-1774, http://dx.doi.org/10.1021/acsnano.0c09441.
[28] Ying Zhao, 汪令飞, Zhenhua Wu, Franz Schanovsky, 许晓欣, Hong Yang, Lai, jinru, Donyang Liu, Xichen Chuai, Yue Su, Xingsheng Wang, Ling Li, Ming Liu. A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes. Symposium on VLSI Technology,. 2021, 第 11 作者
[29] 刘孟淦, 陆丛研, 杨冠华, Weizhuo Gan, 彭松昂, zhenhua wu, Jiebin Niu, Jiawei Wang, 汪令飞, Mengmeng Li, Di Geng, 卢年端, Wei Cao, Deji Akinwande, Ling Li, Ming Liu. Analog Monolayer MoS2 Transistor with Record-high Intrinsic Gain (> 100 dB) and Ultra-low Saturation Voltage (< 0.1 V) by Source Engineering. 2021 Symposium on VLSI Technology. 2021, 第 9 作者
[30] Li, Linan, Ba, Wenqiang, Wang, Wei, Li, Ling, Xu, Guangwei, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Banerjee, Writam. A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism. MICROELECTRONICS JOURNAL[J]. 2019, 第 6 作者86: 1-6, http://dx.doi.org/10.1016/j.mejo.2019.02.002.
[31] Wang, Lingfei, Thean, Aaron VoonYew, Liang, Gengchiau. A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems. JOURNAL OF APPLIED PHYSICS[J]. 2019, 第 1 作者125(22): http://dx.doi.org/10.1063/1.5098862.
[32] Wang, Lingfei, Wang, Lin, Ang, KahWee, Thean, Aaron VoonYew, Liang, Gengchiau. A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2019, 第 1 作者66(9): 4092-4100, http://dx.doi.org/10.1109/TED.2019.2931069.
[33] Li, Linan, Ba, Wenqiang, Wang, Wei, Li, Ling, Xu, Guangwei, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Banerjee, Writam. A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism. MICROELECTRONICS JOURNAL[J]. 2019, 第 6 作者86: 1-6, http://dx.doi.org/10.1016/j.mejo.2019.02.002.
[34] Wang, Lingfei, Thean, Aaron VoonYew, Liang, Gengchiau. A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems. JOURNAL OF APPLIED PHYSICS[J]. 2019, 第 1 作者125(22): https://www.webofscience.com/wos/woscc/full-record/WOS:000471698600038.
[35] Wang, Lingfei, Wang, Lin, Ang, KahWee, Thean, Aaron VoonYew, Liang, Gengchiau. A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2019, 第 1 作者66(9): 4092-4100, 
[36] Wang, Lingfei, Li, Yang, Feng, Xuewei, Ang, KahWee, Gong, Xiao, Thean, Aaron VoonYew, Liang, Gengchiau. A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors. JOURNAL OF APPLIED PHYSICS[J]. 2018, 第 1 作者124(3): http://dx.doi.org/10.1063/1.5040908.
[37] 汪令飞, Lin Wang, Kah-Wee Ang, Aaron Thean, Gengchiau Liang. A Surface Potential and Physics Based Compact Model for 2D Polycrystalline MoSFET with Resistive Switching Behavior in Neuromorphic Computing. IEEE International Electron Devices Meeting. 2018, 第 1 作者
[38] Wang, Lingfei, Li, Yang, Gong, Xiao, Thean, Aaron VoonYew, Liang, Gengchiau. A Physics-Based Compact Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 第 1 作者39(5): 761-764, http://dx.doi.org/10.1109/LED.2018.2820142.
[39] Wang, Lingfei, Thean, Aaron VoonYew, Liang, Gengchiau. Percolation theory based statistical resistance model for resistive random access memory. APPLIED PHYSICS LETTERS[J]. 2018, 第 1 作者  通讯作者  112(25): http://dx.doi.org/10.1063/1.5023196.
[40] Wang, Lingfei, Li, Yang, Feng, Xuewei, Ang, KahWee, Gong, Xiao, Thean, Aaron VoonYew, Liang, Gengchiau. A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors. JOURNAL OF APPLIED PHYSICS[J]. 2018, 第 1 作者124(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000439939600017.
[41] 汪令飞, Lin Wang, Kah-Wee Ang, Aaron Thean, Gengchiau Liang. A Surface Potential and Physics Based Compact Model for 2D Polycrystalline MoSFET with Resistive Switching Behavior in Neuromorphic Computing. IEEE International Electron Devices Meeting. 2018, 第 1 作者
[42] Wang, Lingfei, Li, Yang, Gong, Xiao, Thean, Aaron VoonYew, Liang, Gengchiau. A Physics-Based Compact Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 第 1 作者39(5): 761-764, https://www.webofscience.com/wos/woscc/full-record/WOS:000432990700030.
[43] Wang, Lingfei, Thean, Aaron VoonYew, Liang, Gengchiau. Percolation theory based statistical resistance model for resistive random access memory. APPLIED PHYSICS LETTERS[J]. 2018, 第 11 作者112(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000435987400047.
[44] Lingfei Wang, Yang Li, Xuewei Feng, Kah-Wee Ang, Xiao Gong, Aaron Thean, Gengchiau Liang. A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration. 2017 IEEE International Electron Devices Meeting (IEDM). 2017, 第 1 作者
[45] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 第 5 作者681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[46] Lu, Nianduan, Wang, Lingfei, Li, Ling, Liu, Ming. A review for compact model of graphene field-effect transistors. CHINESE PHYSICS B. 2017, 第 2 作者26(3): 36804-036804, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/26/3/036804.
[47] Lingfei Wang, Yang Li, Xuewei Feng, Kah-Wee Ang, Xiao Gong, Aaron Thean, Gengchiau Liang. A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration. 2017 IEEE International Electron Devices Meeting (IEDM). 2017, 第 1 作者
[48] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 第 5 作者681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[49] Lu, Nianduan, Wang, Lingfei, Li, Ling, Liu, Ming. A review for compact model of graphene field-effect transistors. CHINESE PHYSICS B[J]. 2017, 第 2 作者26(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000396129200044.
[50] Wei Wang, Yang Li, Ming Wang, 汪令飞, Qi Liu, Writam Banerjee, Ling Li, Ming Liu. A hardware neural network for handwritten digits recognition using binary RRAM as synaptic weight element. IEEE Silicon Nanoelectronics Workshop. 2016, 第 4 作者
[51] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Wang, Wei, Wang, Lingfei, Han, Zhiheng, Li, Ling, Liu, Ming. Progress in flexible organic thin-film transistors and integrated circuits. SCIENCE BULLETIN[J]. 2016, 第 5 作者61(14): 1081-1096, http://dx.doi.org/10.1007/s11434-016-1115-x.
[52] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 第 1 作者108(1): http://159.226.55.106/handle/172511/16251.
[53] Wang, Lingfei, Peng, Songang, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Jin, Zhi, Liu, Ming. Surface-potential-based physical compact model for graphene field effect transistor. JOURNAL OF APPLIED PHYSICS[J]. 2016, 第 1 作者120(8): http://159.226.55.106/handle/172511/16253.
[54] Wei Wang, Yang Li, Ming Wang, 汪令飞, Qi Liu, Writam Banerjee, Ling Li, Ming Liu. A hardware neural network for handwritten digits recognition using binary RRAM as synaptic weight element. IEEE Silicon Nanoelectronics Workshop. 2016, 第 4 作者
[55] Congyan Lu, Zhuoyu Ji, Guangwei Xu, Wei Wang, Lingfei Wang, Zhiheng Han, Ling Li, Ming Liu. Progress in flexible organic thin-film transistors and integrated circuits. Science Bulletin[J]. 2016, 第 5 作者61(14): 1081-1096, https://www.sciengine.com/doi/10.1007/s11434-016-1115-x.
[56] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 第 1 作者108(1): http://159.226.55.106/handle/172511/16251.
[57] Wang, Lingfei, Peng, Songang, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Jin, Zhi, Liu, Ming. Surface-potential-based physical compact model for graphene field effect transistor. JOURNAL OF APPLIED PHYSICS[J]. 2016, 第 1 作者120(8): http://159.226.55.106/handle/172511/16253.
[58] Wang, Lingfei, Li, Ling, Lu, Nianduan, Ji, Zhuoyu, Wang, Wei, Zong, Zhiwei, Xu, Guangwei, Liu, Ming. An Improved Cut-Off Frequency Model With a Modified Small-Signal Equivalent Circuit in Graphene Field-Effect Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 第 1 作者36(12): 1351-1354, https://www.webofscience.com/wos/woscc/full-record/WOS:000365295300027.
[59] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, 第 1 作者http://10.10.10.126/handle/311049/15248.
[60] 徐光伟, 王伟, 汪令飞, 姬濯宇, 王龙, 李泠, 刘明. Origin of Mobility Degeneration at High Gate Bias in Organic Thin Film Transistors Based on Carriers��� Freeze to Surface Charges. 2015, 第 3 作者http://10.10.10.126/handle/311049/15250.
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（ 1 ） 高性能氧化物TFT的模型与新型像素驱动架构, 负责人, 国家任务, 2021-12--2025-11
（ 2 ） 后摩尔晶体管紧凑模型技术及新型集成设计方法研究, 负责人, 国家任务, 2023-01--2026-12

（1）Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability   超大规模集成电路技术和电路研讨会   2022-06-01
（2）Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs   国际电子器件大会   2021-12-01
（3）A new surface potential and physics based compact model for a-IGZO TFTs at multinanoscale for high retention and low-power DRAM application   国际电子器件大会   2021-12-01
（4）A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes   超大规模集成电路技术和电路研讨会    2021-06-01