研究方向

1. 面向3D-DRAM的氧化物薄膜晶体管

2. 半导体器件中的缺陷工程

发表期刊与论文130+篇，申请发明专利115项（其中授权中国发明专利60+项，美国发明专利6项，转移转让8项） 

出版图书

1. S. K. Wang, Kinetics studies in GeO2/Ge system: A retrospective from 2021, CRC Press, Taylor & Francis, 2022.

2. S. K. Wang, X. L. Wang, MOS interface physics, process, and characterization, CRC Press, Taylor & Francis, 2021.

3. S. K. Wang, H. G. Liu, “Passivation and Characterization in High-k/III-V Interfaces”, in book entitled “Nanoscale Semiconductor Devices, MEMS, and Sensors: Outlook and Challenges”, Springer Publisher, New York, USA, 2017.

代表论文

1. T. Liao，N. You, J. Wang, Y. Xu, G. Yang, D. Geng, L. Li, S. K. Wang*, IGZO Schottky-Barrier Thin-Film Transistors With Positive Vth and Steep SS by Modulating Schottky Barrier Height, IEEE Electron Device Letters, 47, 921-924 (2026).

2. K. Zhang, J. Wang, Y. Xu, N. You, D. Geng, G. Yang, L. Li, S. K. Wang*, Variable Photocurrent Method for Characterization of Subgap Defect States in Thin In2O3-Based TFTs, IEEE Trans. Electron Devices, 72, 6773 (2025)

3. S. Hu, J. Wang, S. K. Wang* et al., InGeO:F Channel Engineering by Fluorination Based on a GeO2 Buffer Layer with Enhanced Mobility and Negative-Bias Stability, IWDTF (2025) Awarded the Young Researcher Award: S. Hu

4. J. Wang, K. Zhang, Y. Li, N. You, Y. Xu, L. Li, S.-K. Wang*, Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In2O3 Thin-film Transistors, IEEE Trans. Electron Device, 71, 1932 (2024)

5.  J. Wang, Z. Bai, K. Zhang, Z. Wu, D. Geng, Y. Xu, N. You, Y. Li, G. Yang, L. Li*, S. K. Wang*, M. Liu, Ge-doped In2O3: First Demonstration of Utilizing Ge as Oxygen Vacancy Consumer to Break the Mobility/Reliability Tradeoff for High Performance Oxide TFTs, VLSI Symp, (2024) T12.2.

6. N. You, X. Liu, Q. Zhang, Z. Wang, J. Wang, Y. Xu, X. Li, Y. Guo, S.-K. Wang*, Enhanced quality of Al2O3/SiC gate stack via microwave plasma annealing, Rare Metals, 43, 5362 (2024)

7. N. You, Q. Zhang, J. Wang, Y. Xu, K. Zhang, Y. Li, S.-K. Wang*, Utilizing High-Pressure Microwave Plasma Oxidation for Advanced SiC MOS, IWDTF2023 Awarded the Young Researcher Award: N. You

8. Q. Zhang, N. You*, P. Liu, J. Wang, Y. Xu, S.-K. Wang*, Study of defects distribution in SiO2/SiC with plasma oxidation and post oxidation annealing, Applied Surface Science, 610, 155500 (2023).

9. N. N. You, X. Y. Liu, Y. Bai, P. Liu, Q. Zhang, Y. Zhang, S.-K. Wang*, Oxidation Kinetics of SiC in Microwave Oxygen Plasma, Applied Surface Science, 562, 150165 (2021).

10. Y. Xu, S. K. Wang*, P. L. Yao, Y. H. Wang, D. P. Chen, An air-plasma enhanced low-temperature wafer bonding method using high-concentration water glass adhesive layer, Applied Surface Science 500,144007 (2020)

11. S. K. Wang*, Q. Huang, J. Zhao, Y. Zhou, X. L. Zhao, P. L. Yao, X. Y. Liu, X. L. Liang, Electro-chemiresistive Functionalization of SWCNT-TFT by PCz and Its Electronic Hourglass Application with Zero-static Power Consumption, ACS Appl. Energy Mater., 2(11), 8253 (2019).

12. Z. Y. Peng, S. K. Wang*, Y. Bai, Y. D. Tang, X. M. Chen, C. Z. Li, K. A. Liu, X. Y. Liu*, High Temperature 1MHz Capacitance-Voltage Method for Evaluation of Border Traps in 4H-SiC MOS System, J. Appl. Phys.,123, 135302 (2018).

13. S.-K. Wang*, B. Sun, M.-M. Cao, H.-D. Chang, Y.-Y. Su, H.-O. Li, and H.-G. Liu*, Modification of Al2O3/InP interfaces using sulfur and nitrogen passivations, J. Appl. Phys., 121, 184104 (2017).

14. S. K. Wang*, Germanium and III-Vs for future logic (Invited), Comp. Semi. Int. 2017, Brussels Belgium, (March 7-8, 2017)

15. S. K. Wang*, Turbo charging the channel (Invited), Compound Semiconductor, 1, 22-30 (2016).

16. S. K. Wang*, M. Cao, B. Sun, H. Li, H. G. Liu, Reducing the interface trap density in Al2O3/InP stacks by low-temperature thermal process, Appl. Phys. Express 8, 091201 (2015).

17. X. Yang, S. K. Wang*, X. Zhang, B. Sun, W. Zhao, H. D. Chang, Z. H. Zeng, H. G. Liu*, Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method, Appl. Phys. Lett., 105, 092101 (2014).

18. S. K. Wang, H.-G. Liu*, and A. Toriumi, Kinetic Study of GeO Disproportionation into GeO2/Ge System Using X-ray Photoelectron Spectroscopy, Appl. Phys. Lett., 101, 061907 (2012).

19. S. K. Wang*, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi, Kinetic Effects of Oxygen Vacancy Formed by GeO2/Ge Interfacial Reaction, IWDTF 2011 Awarded the Young Researcher Award S. K. Wang

20. S. K. Wang*, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi, Isotope tracing study of GeO desorption mechanism from GeO2/Ge stack using 73Ge and 18O, Jpn J. Appl. Phys., 50(4), 04DA01 (2011).

21. S. K. Wang*, K. Kita, C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi, Desorption kinetics of GeO from GeO2/Ge structure, J. Appl. Phys., 108, 054104 (2010).

22. K. Kita*, S. K. Wang, M Yoshida, C. H. Lee, K. Nagashio, T. Nishimura, A. Toriumi, Comprehensive study of GeO2 oxidation, GeO desorption and GeO2-metal interaction -understanding of Ge processing kinetics for perfect interface control-, Tech. Dig. IEDM, 29.6, 693 (2009).

部分承担科研项目情况：

1. 中国科学院青年促进会优秀会员项目 (2021-2024)

2. 国家重点研发计划项目课题-LTPO技术应用示范 (2021-2024)

3. 国家自然科学基金面上基金项目(62174176) “基于低温原子氧化的SiC MOSFET低界面态栅氧制造技术” (2022-2025) 

4. 国家自然科学基金面上基金项目(61974159) “基于有效离子半径理论的SiC MOSFET栅介质与界面配位调控研究” (2020-2023) 

5. 中国科学院仪器装备研制项目"低界面态、高可靠性SiC MOSFET高压微波等离子体栅氧生长系统“ (2019-2021)

6. 中国科学院青年促进会项目 (2017-2020)

7. ASIC国家重点实验室开放课题：仿生神经元器件及细胞生物电行为模拟(2018-2019)

8. 中国工程物理研究院横向项目3项 (2016-2020)

9. 中国科学院重点实验室开放课题“二元系铁电氧化物极化行为研究”(2015-2016)

10. 国家自然科学基金青年基金项目(61204103) “Ge-MOS 技术中镧系复合高k介质与GeO2/Ge 界面调控的研究”（2013-2015）

11. 中国科学院人才基金A类重点项目-“基于光子晶体技术的硅基锗红外探测器研究” (2013-2014)

参与科研项目情况：

1. 国家重点研发计划(2016YFA0202304)课题“二维原子晶体的材料制备和器件验证” (2016-2021)

2. 国家973项目（2010CB327500）课题“超高频化合物基CMOS器件和电路研究” (2010-2014)

3. 国家973项目（2011CBA00600）课题“超低功耗高性能集成电路器件与工艺基础研究” (2011-2015)

4. 国家02科技重大专项课题(2011ZX02708-003) “高迁移率CMOS新结构器件与工艺集成研究” (2011-2014)

获奖荣誉

1. 2026, 中国电子学会教育教学成果大赛二等奖，“科教产”深度协同的研究生培养模式创新与实践

2. 2025, 中国科学院大学教育教学成果一等奖，新时代“科教产”协同融合培养模式创新与实践-以存储技术人才培养为例

3. 2025, Young Researcher Award, IWDTF2025 (作为导师获奖）

4. 2023, Young Researcher Award, IWDTF2023 (作为导师获奖）

5. 2021, 中国科学院青年创新促进会优秀会员

6. 2019, 北京市技术发明二等奖 “高电流密度电力电子器件关键技术及应用”

7. 2017, 中国科学院青年创新促进会会员

8. 2011, Young Researcher Award, IEEE-IWDTF2011, Japan.

9. 2009-2011, Global Center of Excellence Scholarship, Japan.

10. 2008, 哈尔滨工业大学优秀毕业生－金牌

11. 2006, 国防科工委优秀毕业生

现课题组学生博士8人，硕士生5人

学生就业方向：人工智能、氧化物晶体管、科学研究