随着人类社会信息量的高速增长，计算机在运算速度提高的同时，对能源的消耗也在迅速增加。人脑是自然界中非常高效、节能的信息处理系统，且只有约二十瓦左右的功率。这种能源消耗上的巨大差异，主要来自于计算机与人脑的构架及信息处理方式的不同。现有的计算机是通过冯·诺依曼构架方式进行信息存储与处理的，即信息存储与信息处理在物理上是分离的，在处理器和存储器之间需要进行大量的信息传递；而人脑则是由神经元网络所构成，信息通过改变神经元之间的连接强度（称为突触权重）来进行存储与处理，并且具有自学习功能，实现了存储与处理的一体化。

研究方向：围绕集成电路领域的算力、能效与智能化等瓶颈问题，开展具有认知记忆的类脑计算器件、算法、架构和芯片研究，拓展类脑计算软/硬件技术在智能计算、具身智能、智慧医疗、智能制造等人工智能产业中的应用。具体包括：1）神经形态计算器件与集成技术；2）神经网络模型与深度学习算法；3）感算融合的人工智能感知系统。

招生专业：微电子和固体电子学、电子科学与技术、信号与系统、人工智能等相关专业

招生数量：每年拟招收一名博士和一名硕士

140100-集成电路科学与工程
080903-微电子学与固体电子学
0805Z2-半导体材料与器件

神经形态计算器件与集成技术
神经网络模型与深度学习算法
感算融合的人工智能感知系统

2018-10--中国科学院微电子研究所   研究员
2014-03--2018-10   中国科学院物理研究所   副研究员
2013-11--2014-01   英国剑桥大学材料科学与冶金系   访问学者
2012-07--2014-03   德国亚琛工业大学物理系（IA)   洪堡学者
2011-05--2012-04   韩国国立首尔大学物理与天文系   博士后
2009-07--2018-10   中国科学院物理研究所   副研究员
2007-08--2009-06   中国科学院物理研究所   博士后
2004-03--2007-07   中国科学院上海硅酸盐研究所   博士

2018-10~现在, 中国科学院微电子研究所, 研究员，博士生导师
2014-03~2018-10, 中国科学院物理研究所, 副研究员，博士生导师
2013-11~2014-01, 英国剑桥大学材料科学与冶金系, 洪堡欧洲访问学者
2012-07~2014-03, 德国亚琛工业大学物理系（IA), 洪堡学者
2011-05~2012-04, 韩国国立首尔大学物理与天文系, 博士后
2009-07~2011-5, 中国科学院物理研究所, 副研究员
2007-08~2009-06, 中国科学院物理研究所, 博士后

2018-10~现在, 中国科学院微电子研究所, 研究员
2014-03~2018-10,中国科学院物理研究所, 副研究员
2013-11~2014-01,英国剑桥大学材料科学与冶金系, 访问学者
2012-07~2014-03,德国亚琛工业大学物理系（IA), 洪堡学者
2011-05~2012-04,韩国国立首尔大学物理与天文系, 博士后
2009-07~2018-10,中国科学院物理研究所, 副研究员
2007-08~2009-06,中国科学院物理研究所, 博士后

忆阻器及类脑计算
忆阻器及其类脑计算
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（2） Efficient modeling of ionic and electronic interactions by a resistive memory-based reservoir graph neural network, Nature Computational Science, 2025, 第 10 作者  通讯作者
（3） Brain-Inspired In-Memory Data Pruning and Computing with TaOx Mem-Selectors, Advanced Materials, 2025, 第 14 作者  通讯作者
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（5） Continuous-time digital twin with analog memristive neural ordinary differential equation solver, Science Advances, 2025, 第 22 作者  通讯作者
（6） Spin–orbit torque magnetic tunnel junctions with stochastic switching for temporal signal recognition, Journal of Magnetism and Magnetic Materials, 2025, 第 3 作者  通讯作者
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（8） Random resistive memory-based deep extreme point learning machine for unified visual processing, NATURE COMMUNICATIONS, 2025, 第 21 作者  通讯作者
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（12） Fully Binarized Graph Convolutional Network Accelerator Based on In-Memory Computing with Resistive Random-Access Memory, ADVANCED INTELLIGENT SYSTEMS, 2024, 第 13 作者  通讯作者
（13） Semantic memory-based dynamic neural network using memristive ternary CIM and CAM for 2D and 3D vision, SCIENCE ADVANCES, 2024, 第 14 作者  通讯作者
（14） 2T2R RRAM-Based In-Memory Hyperdimensional Computing Encoder for Spatio-Temporal Signal Processing, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2024, 第 12 作者  通讯作者
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（20） Spontaneous Threshold Lowering Neuron using Second-Order Diffusive Memristor for Self-Adaptive Spatial Attention, ADVANCED SCIENCE, 2023, 第 14 作者  通讯作者
（21） Associative Learning with Oxide-based Electrolyte-gated Transistor Synapses, JOURNAL OF INORGANIC MATERIALS, 2023, 第 9 作者  通讯作者
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（26） A Scalable Small-Footprint Time-Space-Pipelined Architecture for Reservoir Computing, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2023, 第 8 作者  通讯作者
（27） Bioinspired In-Sensor Reservoir Computing for Self-Adaptive Visual Recognition with Two-Dimensional Dual-Mode Phototransistors, ADVANCED OPTICAL MATERIALS, 2023, 第 16 作者  通讯作者
（28） Low power flexible monolayer MoS 2 integrated circuits, NATURE COMMUNICATIONS, 2023, 第 16 作者
（29） Low power flexible monolayer MoS2 integrated circuits, Nature Communications, 2023, 第 16 作者
（30） 基于氧化物基电解质栅控晶体管突触的关联学习, 无机材料学报, 2023, 
（31） An ADC-Less RRAM-Based Computing-in-Memory Macro With Binary CNN for Efficient Edge AI, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2023, 第 14 作者  通讯作者
（32） Li-Ion-Based Electrolyte-Gated Transistors with Short Write-Read Delay for Neuromorphic Computing, ADVANCED ELECTRONIC MATERIALS, 2023, 第 12 作者  通讯作者
（33） Next-generation reservoir computing based on memristor array, ACTA PHYSICA SINICA, 2022, 第 5 作者  通讯作者
（34） Long-Term Accuracy Enhancement of Binary Neural Networks Based on Optimized Three-Dimensional Memristor Array, MICROMACHINES, 2022, 第 9 作者
（35） Highly Stretchable MoS 2 -Based Transistors with Opto-Synaptic Functionalities, ADVANCED ELECTRONIC MATERIALS, 2022, 第 6 作者
（36） Few-shot graph learning with robust and energy-efficient memory-augmented graph neural network (MAGNN) based on homogeneous computing-in-memory, 2022 IEEE Symposium on VLSI Technology and Circuits, 2022, 第 13 作者  通讯作者
（37） One transistor one electrolyte-gated transistor for supervised learning in SNNs, IEEE Electron Device Letters, 2022, 第 9 作者  通讯作者
（38） Oscillator-Network-Based Ising Machine, MICROMACHINES, 2022, 第 8 作者
（39） 3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing, 2022 IEEE Symposium on VLSI Technology and Circuits, 2022, 第 12 作者  通讯作者
（40） Large-Area Printing of Ferroelectric Surface and Super-Domain for Solar Water Splitting, Advanced Functional Materials, 2022, 第 11 作者
（41） Convolutional echo-state network with random memristors for spatiotemporal signal classification, Advanced Intelligent Systems, 2022, 第 11 作者  通讯作者
（42） Mixed-precision continual learning based on computational resistance random access memory, Advanced Intelligent Systems, 2022, 第 13 作者  通讯作者
（43） Li-Ion-Based Electrolyte-Gated Transistors with Short Write-Read Delay for Neuromorphic Computing, ADVANCED ELECTRONIC MATERIALS, 2022, 第 12 作者  通讯作者
（44） 基于忆阻器阵列的下一代储池计算, 物理学报, 2022, 第 5 作者  通讯作者
（45） Improvement of weight stability in Li-ion-based electrolyte-gated transistor synapse by silica protective process, APPLIED PHYSICS LETTERS, 2022, 第 9 作者  通讯作者
（46） Electrolyte-gated transistors with good retention for neuromorphic computing, Applied Physics Letters, 2022, 第 8 作者  通讯作者
（47） Highly Stretchable MoS2-Based Transistors with Opto-Synaptic Functionalities, ADVANCED ELECTRONIC MATERIALS, 2022, 第 6 作者
（48） Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks, Science Bulletin, 2021, 第 10 作者
（49） A Reliable All-2D Materials Artificial Synapse for High Energy-Efficient Neuromorphic Computing, ADVANCED FUNCTIONAL MATERIALS, 2021, 第 18 作者
（50） Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System, IEDM, 2021, 第 11 作者
（51） Efficient and Robust Nonvolatile Computing-In-Memory based on Voltage Division in 2T2R RRAM with Input-Dependent Sensing Control, IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 第 7 作者
（52） 用于原位学习的忆阻器-CMOS混合神经元及全硬件忆阻脉冲神经网络的实现, Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks, 科学通报:英文版, 2021, 第 10 作者
（53） A 14 nm 100Kb 2T2R transpose RRAM with >150X resistance ratio enhancement and 27.95% reduction on energy-latency product using low-power near threshold read operation and fast data-line current stabling scheme, IEEE Symposium on VLSI Technology, 2021, 第 11 作者
（54） Energy efficient and robust reservoir computing system using ultrathin (3.5 nm) ferroelectric tunneling junctions for temporal data learning, 2021 IEEE Symposium on VLSI Technology and Circuits, 2021, 第 6 作者  通讯作者
（55） Charge-Driven Transtive Devices via Electric Field Control of Magnetism in a Helimagnet, PHYSICAL REVIEW APPLIED, 2021, 第 2 作者
（56） Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information Processing, ADVANCED MATERIALS, 2020, 第 3 作者  通讯作者
（57） Fully Memristive SNNs with Temporal Coding for Fast and Low-power Edge Computing, 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020, 第 13 作者
（58） Ion-gated transistor: An enabler for sensing and computing integration, Advanced Intelligent Systems, 2020, 第 1 作者  通讯作者
（59） Artificial synapse based on van der Waals heterostructures with tunable synaptic funcions for neuromorphic computing, ACS Applied Materials & Interfaces, 2020, 第 1 作者
（60） Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing, ACS APPLIED MATERIALS & INTERFACES, 2020, 第 3 作者
（61） Nonvolatile Memory and Artificial Synapse Based on the Cu/P(VDF-TrFE)/Ni Organic Memtranstor, ACS APPLIED MATERIALS & INTERFACES, 2020, 第 3 作者
（62） A highly CMOS compatible hafnia-based ferroelectric diode, NATURE COMMUNICATIONS, 2020, 第 17 作者
（63） An organic synaptic transistor with Nafion electrolyte, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 第 2 作者  通讯作者
（64） A CMOS-compatible ionic/electronic hybrid transistor based on 2D alpha-MoO3, 2019 INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC), 2019, 第 3 作者
（65） Artificial synaptic device based on a multiferroic heterostructure, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 第 3 作者
（66） Uniform, fast, and reliable LixSiOy-based resistive switching memroy, IEEE Electron Device Letters, 2019, 第 1 作者
（67） Realization of Complete Boolean Logic Functions using a Single Memtranstor, PHYSICAL REVIEW APPLIED, 2019, 第 3 作者
（68） Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode, IEEE ELECTRON DEVICE LETTERS, 2019, 
（69） Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory, IEEE ELECTRON DEVICE LETTERS, 2019, 第 3 作者
（70） Spin-induced multiferroicity in the binary perovskite manganite Mn 2 O 3, NATURE COMMUNICATIONS, 2018, 第 4 作者
（71） Electric control of exchange bias in multiferroic hexaferrite Ba 0.4 Sr 1.6 Mg 2 Fe 12 O 22, PHYSICAL REVIEW B, 2018, 第 4 作者
（72） Mimic synaptic plasticity and neural network using memtranstors, Advanced Materials, 2018, 第 1 作者  通讯作者
（73） All-Solid-State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing, ADVANCED FUNCTIONAL MATERIALS, 2018, 第 2 作者  通讯作者
（74） 基于忆耦器实现神经突触可塑性和神经网络模拟, 物理, 2018, 第 1 作者
（75） Fundamental circuit element and nonvolatile memory based on magnetoelectric effect, ACTA PHYSICA SINICA, 2018, 第 2 作者  通讯作者
（76） Electric control of exchange bias in multiferroic hexaferrite Ba0.4Sr1.6Mg2Fe22O22, Physics Review B, 2018, 第 1 作者
（77） Room-temperature magnetoelectric effects in multiferroic y-type hexaferrites, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 第 4 作者
（78） Room-Temperature Nonvolatile Memory Based on a Single-Phase Multiferroic Hexaferrite, ADVANCED FUNCTIONAL MATERIALS, 2018, 第 2 作者
（79） Electric control of exchange bias in multiferroic hexaferrite Ba0.4Sr1.6Mg2Fe12O22, PHYSICAL REVIEW B, 2018, 第 4 作者
（80） Mimicking Synaptic Plasticity and Neural Network Using Memtranstors, ADVANCED MATERIALS, 2018, 第 2 作者  通讯作者
（81） 基于磁电耦合效应的基本电路元件和非易失性存储器, Fundamental circuit element and nonvolatile memory based on magnetoelectric effect, ACTA PHYSICA SINICA, 2018, 第 2 作者  通讯作者
（82） Magnetocaloric effect in the layered organic–inorganic hybrid(CH_3NH_3)_2CuCl_4, Magnetocaloric effect in the layered organic–inorganic hybrid(CH_3NH_3)_2CuCl_4, 中国物理B：英文版, 2018, 第 5 作者
（83） Magnetocaloric effect in the layered organic-inorganic hybrid (CH3NH3)2CuCl4, Magnetocaloric effect in the layered organic–inorganic hybrid(CH_3NH_3)_2CuCl_4, Chinese Physics B, 2018, 第 5 作者
（84） Spin-induced multiferroicity in the binary perovskite manganite Mn2O3, NATURE COMMUNICATIONS, 2018, 第 4 作者
（85） 基于磁电耦合效应的基本电路元件和非易失性存储器, 物理学报, 2018, 第 1 作者  通讯作者
（86） Direct measurement of thermoelectric properties of β-MnO 2 in its powder form, APPLIED PHYSICS LETTERS, 2017, 第 5 作者
（87） Hidden spin-order-induced room-temperature ferroelectricity in a peculiar conical magnetic structure, PHYSICAL REVIEW B, 2017, 第 8 作者
（88） Direct measurement of thermoelectric properties of β-MnO2 in its powder form, Applied Physics Letters, 2017, 第 1 作者
（89） Direct measurement of thermoelectric properties of beta-MnO2 in its powder form, APPLIED PHYSICS LETTERS, 2017, 第 5 作者
（90） Synaptic Transistor Implemented Using Quasi-2D Molybdenum Oxide, Synaptic Transistor Implemented Using Quasi-2D Molybdenum Oxide, ADVANCED MATERIALS, 2017, 第 1 作者
（91） Impact of Pressure on the Resonant Bonding in Chalcogenides, JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 第 7 作者
（92） Large pyroelectric and thermal expansion coefficients in the (CH3)(2)NH2Mn (HCOO)(3) metal-organic framework, APPLIED PHYSICS LETTERS, 2017, 第 5 作者
（93） Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 第 2 作者  通讯作者
（94） A Synaptic Transistor based on Quasi-2D Molybdenum Oxide, ADVANCED MATERIALS, 2017, 第 2 作者  通讯作者
（95） Large pyroelectric and thermal expansion coefficients in the (CH 3 ) 2 NH 2 Mn (HCOO) 3 metal-organic framework, APPLIED PHYSICS LETTERS, 2017, 第 5 作者
（96） A synaptic transistor based on quasi-two- dimensional molybdenum oxide, Advanced Materials, 2017, 第 1 作者  通讯作者
（97） Giant magnetoelectric effects achieved by tuning spin cone symmetry in Y-type hexaferrites, NATURE COMMUNICATIONS, 2017, 第 8 作者
（98） Memristive switching in Cu/Si/Pt cells and its improvement in vacuum environment, SOLID STATE IONICS, 2016, 第 1 作者  通讯作者
（99） Realization of a flux-driven memtranstor at room temperature, Realization of a flux-driven memtranstor at room temperature, Chinese Physics B, 2016, 第 2 作者  通讯作者
（100） Quantum electric-dipole liquid on a triangular lattice, NATURE COMMUNICATIONS, 2016, 第 7 作者
（101） Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 第 2 作者  通讯作者
（102） Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures, APPLIED PHYSICS LETTERS, 2016, 第 2 作者  通讯作者
（103） Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2/3)O3]0.7[PbTiO3]0.3/Ni Heterostructure, Physical Review Applied, 2016, 第 1 作者  通讯作者
（104） A multilevel nonvolatile magnetoelectric memory, SCIENTIFIC REPORTS, 2016, 第 3 作者
（105） Nonvolatile Memory Based on Nonlinear Magnetoelectric Effects, PHYSICAL REVIEW APPLIED, 2016, 第 4 作者
（106） Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/Pbd(Mg1/3Nb2/3)O-3(0.7)PbTiO3(0.3)/Ni Heterostructure, PHYSICAL REVIEW APPLIED, 2016, 第 2 作者  通讯作者
（107） Spin-driven multiferroics in BaYFeO 4, JOURNAL OF APPLIED PHYSICS, 2015, 第 5 作者
（108） Enhancement of the thermoelectric properties of MnSb2Se4 through Cu resonant doping, RSC ADVANCES, 2015, 第 9 作者
（109） Understanding the conductive channel evolution in Na:WO3-x-based planar devices, NANOSCALE, 2015, 第 1 作者  通讯作者
（110） Toward the complete relational graph of fundamental circuit elements, Toward the complete relational graph of fundamental circuit elements, Chinese Physics B, 2015, 第 1 作者
（111） Spin-driven multiferroics in BaYFeO4, JOURNAL OF APPLIED PHYSICS, 2015, 第 5 作者
（112） Enhancement of the thermoelectric properties of MnSb 2 Se 4 through Cu resonant doping, RSC ADVANCES, 2015, 第 9 作者
（113） Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures, APPLIED PHYSICS LETTERS, 2013, 
（114） Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems, NANOTECHNOLOGY, 2013, 
（115） Resistance switching in oxides with inhomogeneous conductivity, Resistance switching in oxides with inhomogeneous conductivity, Chinese Physics B, 2013, 
（116） Pulse-induced alternation from bipolar resistive switching to unipolar resistive switching in the Ag/AgOx/Mg0.2Zn0.8O/Pt device, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 
（117） Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO 2 /Pt resistive switching devices, APPLIED PHYSICS LETTERS, 2012, 
（118） Pulse-induced alternation from bipolar resistive switching to unipolar resistive switching in the Ag/AgOx/MgZnO/Pt device, Journal of Physics D: Applied Physics, 2012, 第 1 作者
（119） Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices, APPLIED PHYSICS LETTERS, 2012, 
（120） Visualization of the conductive channel in a planar resistance switching device based on electrochromic materials, JOURNAL OF APPLIED PHYSICS, 2012, 第 1 作者  通讯作者
（121） Buffer-layer-enhanced magnetic field effect in La 0.5 Ca 0.5 MnO 3 /LaMnO 3 /SrTiO 3 :Nb heterojunctions, JOURNAL OF APPLIED PHYSICS, 2011, 
（122） Direct observation of local resistance switching in WO 3 films, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 
（123） Direct observation of local resistance switching in WO3 films, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 
（124） Buffer-layer-enhanced magnetic field effect in La0.5Ca0.5MnO3/LaMnO3/SrTiO3:Nb heterojunctions, JOURNAL OF APPLIED PHYSICS, 2011, 
（125） Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films, NANOTECHNOLOGY, 2011, 第 1 作者  通讯作者
（126） Influence of film thickness on the physical properties of manganite heterojunctions, JOURNAL OF APPLIED PHYSICS, 2011, 第 4 作者
（127） Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 
（128） Roles of silver oxide in the bipolar resistance switching devices with silver electrode, APPLIED PHYSICS LETTERS, 2011, 
（129） Effect of temperature on the La 1-x Ca x MnO 3 /SrTiO 3 :Nb (x=0-0.75) heterojunctions, APPLIED PHYSICS LETTERS, 2010, 
（130） Interfacial barrier in manganite junctions with different crystallographic orientations, APPLIED PHYSICS LETTERS, 2010, 
（131） Ag-AL合金顶电极La0.7Ca0.3MnO3薄膜器件阻变行为疲劳性的改进, JOURNAL OF APPLIED PHYSICS, 2010, 第 5 作者
（132） Effect of temperature on the La1-xCaxMnO3/SrTiO3:Nb (x=0-0.75) heterojunctions, APPLIED PHYSICS LETTERS, 2010, 
（133） Endurance improvement of resistance switching behaviors in the La0.7Ca0.3MnO3 film based devices with Ag-Al alloy top electrodes, JOURNAL OF APPLIED PHYSICS, 2010, 
（134） Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing, APPLIED PHYSICS LETTERS, 2010, 
（135） Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 第 2 作者  通讯作者
（136） Electronic transport and colossal electroresistance in SrTiO 3 :Nb-based Schottky junctions, APPLIED PHYSICS LETTERS, 2009, 
（137） Electric field-induced resistance switching in (Bi2O3)(0.7)(Y2O3)(0.3) films, JOURNAL OF APPLIED PHYSICS, 2009, 
（138） Bipolar Resistance Switching in Fully Transparent ZnO:Mg-Based Devices, APPLIED PHYSICS EXPRESS, 2009, 第 2 作者  通讯作者
（139） The polarity origin of the bipolar resistance switching behaviors in metal/La0.7Ca0.3MnO3/Pt junctions, APPLIED PHYSICS LETTERS, 2009, 
（140） Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions, APPLIED PHYSICS LETTERS, 2009, 
（141） Electronic transport and colossal electroresistance in SrTiO3:Nb-based Schottky junctions, APPLIED PHYSICS LETTERS, 2009, 
（142） Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes, JOURNAL OF APPLIED PHYSICS, 2009, 
（143） Crystallinity dependence of resistance switching in La0.7Ca0.3MnO3 films grown by pulsed laser deposition, JOURNAL OF APPLIED PHYSICS, 2009, 
（144） Electric pulse-induced resistance switching in (Bi2O3)0.7(Y2O3)0.3 films, Journal of Applied Physics, 2009, 第 1 作者
（145） Resistance dependence of photovoltaic effect in Au/SrTiO 3 :Nb(0.5 wt %) Schottky junctions, APPLIED PHYSICS LETTERS, 2008, 
（146） Resistance and magnetization of La(0.7)Ca(0.3)MnO(3) bulk at different resistance states induced by electric pulses, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 
（147） Photoresponse of the Schottky junction Au/SrTiO3 : Nb in different resistive states, APPLIED PHYSICS LETTERS, 2008, 
（148） Effects of oxygen partial pressure on the resistance switching properties of La0.7Ca0.3MnO3 thin films prepared by pulsed laser deposition method, 6th International Conference on Thin Film Physics and Applications, 2008, 第 4 作者
（149） Resistance dependence of photovoltaic effect in Au/SrTiO3:Nb(0.5 wt %) Schottky junctions, APPLIED PHYSICS LETTERS, 2008, 
（150） Reversible multilevel resistance switching of Ag-La0.7Ca0.3MnO3-Pt heterostructures, JOURNAL OF MATERIALS RESEARCH, 2008, 第 1 作者
（151） Asymmetric fatigue and its endurance improvement in resistance switching of ag-la0.7ca0.3mno3-pt heterostructures, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 
（152） "Positive" and "negative" electric-pulse-induced reversible resistance switching effect in Pr0.7Ca0.3MnO3 films", APPLIED PHYSICS A - MATERIALS SCIENCE AND PROCESSING, 2007, 第 2 作者
（153） "positive" and "negative" electric-pulse-induced reversible resistance switching effect in pr0.7ca0.3mno3 films, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 
（154） Asymmetric fatigue and its endurance improvement in resistance switching of Ag–La0.7Ca0.3MnO3–Pt heterostructures, J PHYS D: APPL PHYS, 2007, 第 1 作者
（155） Resistance and magnetization of La0. 7Ca0. 3MnO3 bulk at different resistance states induced by electric pulses, Journal of Physics D: Applied Physics, 2007, 第 1 作者
（156） Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures, PHYSICAL REVIEW B, 2006, 
（157） Resistance switching effect of Ag/Ln(1-x)Ca(x)MnO(3)/Pt sandwich structure, INTEGRATED FERROELECTRICS, 2006, 
（158） Temperature dependence of current-voltage characteristics of ag-la0.7ca0.3mno3-pt heterostructures, APPLIED PHYSICS LETTERS, 2006, 
（159） Effects of ingredients and post-heat treatment on phase transformation and structure of bloactive composite coatings, HIGH-PERFORMANCE CERAMICS III, PTS 1 AND 2, 2005, 
（160） Effects of Ingredients and Post-heat Treatment on Phase Transformation and Structure of Bioactive Composite Coatings, Key Engineering Materials, 2005, 第 1 作者
（161） Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag-La0.7Ca0.3MnO3-Pt sandwiches, APPLIED PHYSICS LETTERS, 2005, 
（162） Study on the subsonic thermal sprayed Ti/bioglass composite coatings on titanium alloy, PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 
（163） Resistance switching driven by polarity and voltage of electric pulse in agla0.7ca0.3mno3pt sandwiches, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 
（164） Study on the subsonic speed flame spraying coating of hydroxyapatite, RARE METALS, 2003, 
（165） Hydroxyapatite graded coatings made through subsonic thermal spraying, FUNCTIONALLY GRADED MATERIALS VII, 2003, 
（166） 电结晶羟基磷灰石涂层结构的研究, Study on Structure of the Hydroxyapatite Coating Prepared by Electro-deposition, 中国表面工程, 2003, 第 2 作者
（167） Recent progress and prospect in bioactive composite coatings on metal substrate, Journal of Jiamusi University (Natural Science Edition), 2002, 第 1 作者
（168） Towards the Complete Relational Graph of Fundamental Circuit Elements, 第 1 作者

   

复旦大学

香港大学

中国科学技术大学

清华大学

中国科学院物理研究所