尚大山  男  博导  中国科学院微电子研究所
电子邮件: shangdashan@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号
邮政编码: 100029

研究领域

随着人类社会信息量的高速增长,计算机在运算速度提高的同时,对能源的消耗也在迅速增加。人脑是自然界中非常高效、节能的信息处理系统,且只有约二十瓦左右的功率。这种能源消耗上的巨大差异,主要来自于计算机与人脑的构架及信息处理方式的不同。现有的计算机是通过冯·诺依曼构架方式进行信息存储与处理的,即信息存储与信息处理在物理上是分离的,在处理器和存储器之间需要进行大量的信息传递;而人脑则是由神经元网络所构成,信息通过改变神经元之间的连接强度(称为突触权重)来进行存储与处理,并且具有自学习功能,实现了存储与处理的一体化。围绕类脑计算领域的重要科学与技术问题,开展具有认知记忆的神经形态计算器件、集成、算法和系统研究,拓展其在大数据处理、物联网和人工智能系统中的应用,具体包括:

  1. 神经形态计算器件与集成技术
  2. 神经网络模型与深度学习算法
  3. 感算融合的人工智能感知系统

招生信息

招生专业:微电子和固体电子学、电子科学与技术、信号与系统、人工智能等相关专业

招生数量:每年拟招收两名博士和两名硕士

招生专业
080903-微电子学与固体电子学
081002-信号与信息处理
085400-电子信息
招生方向
神经形态计算器件与集成技术
神经网络模型与深度学习算法
感算融合的人工智能感知系统

教育背景

2004-03--2007-07   中国科学院上海硅酸盐研究所   博士
学历

工作经历

2018-10~现在, 中国科学院微电子研究所, 研究员,博士生导师
2014-03~2018-10, 中国科学院物理研究所, 副研究员,博士生导师
2013-11~2014-01, 英国剑桥大学材料科学与冶金系, 洪堡欧洲访问学者
2012-07~2014-03, 德国亚琛工业大学物理系(IA), 洪堡学者
2011-05~2012-04, 韩国国立首尔大学物理与天文系, 博士后
2009-07~2011-5, 中国科学院物理研究所, 副研究员
2007-08~2009-06, 中国科学院物理研究所, 博士后


工作简历
2018-10~现在, 中国科学院微电子研究所, 研究员
2014-03~2018-10,中国科学院物理研究所, 副研究员
2013-11~2014-01,英国剑桥大学材料科学与冶金系, 访问学者
2012-07~2014-03,德国亚琛工业大学物理系(IA), 洪堡学者
2011-05~2012-04,韩国国立首尔大学物理与天文系, 博士后
2009-07~2018-10,中国科学院物理研究所, 副研究员
2007-08~2009-06,中国科学院物理研究所, 博士后

教授课程

忆阻器及其类脑计算
文献阅读
文献阅读-1班

专利与奖励

   
奖励信息
(1) 2018中国物理学会“最有影响力论文”一等奖, 一等奖, 其他, 2018
(2) 2017美国第三届功能材料进展国际会议Best Poster Award, 二等奖, 其他, 2017
(3) 2016美国第67届磁学与磁性材料国际会议Best Poster Award, 一等奖, 其他, 2016
专利成果
[1] 邢国忠, 林淮, 吴祖恒, 牛洁斌, 姚志宏, 尚大山, 李泠, 刘明. 忆阻器、汉明距离计算方法及存算一体集成应用. CN: CN113129967A, 2021-07-16.

[2] 孙阳, 柴一晟, 尚大山. 一种电磁转换器件以及包含这种电磁转换器件的信息存储器. CN: CN106796960B, 2020-12-22.

[3] Sun, Yang, Chai, Yisheng, Shang, Dashan. Electromagnetic conversion device and information memory comprising the same. US: US10062834(B2), 2018-08-28.

[4] Sun Yang, Chai Yisheng, Shang Dashan. ELECTROMAGNETIC CONVERSION DEVICE AND INFORMATION MEMORY COMPRISING THE SAME. 美国: US2018026177(A1), 2018-01-25.

[5] 孙阳, 柴一晟, 尚大山, 陆俊. 一种电磁转换器件. 中国: CN104681710A, 2015-06-03.

[6] 尚大山, 史磊, 孙继荣, 沈保根, 赵同云. 一种阻变存储器及其制备方法. 中国: CN101937969A, 2011.01.05.

[7] 尚大山, 史磊, 孙继荣, 沈保根, 赵同云. 一种阻变存储器及其制备方法. 中国: CN101997081A, 2011-03-30.

[8] 尚大山, 董春颖, 孙继荣, 沈保根, 赵同云. 一种非易失性阻变存储器及其制备方法. 中国: CN101969100A, 2011-02-09.

[9] 史磊, 尚大山, 孙继荣, 沈保根, 赵同云. 一种柔性阻变存储器及其制备方法. 中国: CN101958400A, 2011-01-26.

[10] 史磊, 尚大山, 孙继荣, 赵同云, 沈保根. 基于(Bi 2 O 3 ) 1-X (Y 2 O 3 ) X 固体电解质薄膜的非挥发记忆元件及其制备方法. 中国: CN101834272A, 2010.09.15.

[11] 陈立东, 吴子华, 王 群, 尚大山. 电脉冲诱导的电阻可逆变化的测试系统及其应用. 中国: CN100575972, 2009-12-30.

[12] 陈立东, 吴子华, 王 群, 尚大山. 电脉冲诱导的电阻可逆变化特性的测试装置. 中国: CN201047862, 2008-04-16.

[13] 陈立东, 尚大山, 王群, 吴子华. 提高脉冲触发电阻式随机存储器抗疲劳特性的方法. 中国: CN101017879, 2007-08-15.

出版信息

   
发表论文
(1) Long-Term Accuracy Enhancement of Binary Neural Networks Based on Optimized Three-Dimensional Memristor Array, Micromachines, 2022, 第 9 作者
(2) One transistor one electrolyte-gated transistor for supervised learning in SNNs, IEEE Electron Device Letters, 2022, 通讯作者
(3) Mixed-precision continual learning based on computational resistance random access memory, Advanced Intelligent Systems, 2022, 通讯作者
(4) Convolutional echo-state network with random memristors for spatiotemporal signal classification, Advanced Intelligent Systems, 2022, 通讯作者
(5) 基于忆阻器阵列的下一代储池计算, 物理学报, 2022, 通讯作者
(6) Electrolyte-gated transistors with good retention for neuromorphic computing, Applied Physics Letters, 2022, 通讯作者
(7) Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks, SCIENCE BULLETIN, 2021, 第 10 作者
(8) A Reliable All-2D Materials Artificial Synapse for High Energy-Efficient Neuromorphic Computing, ADVANCED FUNCTIONAL MATERIALS, 2021, 第 18 作者
(9) One transistor one electrolyte-gated transistor based spiking neural network for power-efficient neuromorphic computing system, Advanced Functional Materials, 2021, 通讯作者
(10) Efficient and Robust Nonvolatile Computing-In-Memory based on Voltage Division in 2T2R RRAM with Input-Dependent Sensing Control, IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 第 7 作者
(11) A 14 nm 100Kb 2T2R transpose RRAM with >150X resistance ratio enhancement and 27.95% reduction on energy-latency product using low-power near threshold read operation and fast data-line current stabling scheme, IEEE Symposium on VLSI Technology, 2021, 第11作者
(12) Energy efficient and robust reservoir computing system using ultrathin (3.5 nm) ferroelectric tunneling junctions for temporal data learning, IEEE Symposium on VLSI Technology, 2021, 通讯作者
(13) Charge-Driven Transtive Devices via Electric Field Control of Magnetism in a Helimagnet, PHYSICAL REVIEW APPLIED, 2021, 第 2 作者
(14) Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information Processing, ADVANCED MATERIALS, 2020, 通讯作者
(15) Fully Memristive SNNs with Temporal Coding for Fast and Low-power Edge Computing, 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020, 
(16) Ion-gated transistor: An enabler for sensing and computing integration, Advanced Intelligent Systems, 2020, 通讯作者
(17) Artificial synapse based on van der Waals heterostructures with tunable synaptic funcions for neuromorphic computing, ACS Applied Materials & Interfaces, 2020, 第 1 作者
(18) Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing, ACS APPLIED MATERIALS & INTERFACES, 2020, 第 3 作者
(19) A highly CMOS compatible hafnia-based ferroelectric diode, NATURE COMMUNICATIONS, 2020, 第 17 作者
(20) Nonvolatile Memory and Artificial Synapse Based on the Cu/P(VDF-TrFE)/Ni Organic Memtranstor, ACS APPLIED MATERIALS & INTERFACES, 2020, 第 3 作者
(21) An organic synaptic transistor with Nafion electrolyte, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 通讯作者
(22) Artificial synaptic device based on a multiferroic heterostructure, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 第 3 作者
(23) A CMOS-compatible ionic/electronic hybrid transistor based on 2D alpha-MoO3, 2019 INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC), 2019, 
(24) Uniform, fast, and reliable LixSiOy-based resistive switching memroy, IEEE Electron Device Letters, 2019, 第 1 作者
(25) Realization of Complete Boolean Logic Functions using a Single Memtranstor, PHYSICAL REVIEW APPLIED, 2019, 第 3 作者
(26) Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode, IEEE ELECTRON DEVICE LETTERS, 2019, 
(27) Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory, IEEE ELECTRON DEVICE LETTERS, 2019, 第 3 作者
(28) Mimic synaptic plasticity and neural network using memtranstors, Advanced Materials, 2018, 通讯作者
(29) All-Solid-State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing, ADVANCED FUNCTIONAL MATERIALS, 2018, 通讯作者
(30) 基于忆耦器实现神经突触可塑性和神经网络模拟, 物理, 2018, 第 1 作者
(31) Fundamental circuit element and nonvolatile memory based on magnetoelectric effect, ACTA PHYSICA SINICA, 2018, 通讯作者
(32) Electric control of exchange bias in multiferroic hexaferrite Ba0.4Sr1.6Mg2Fe22O22, Physics Review B, 2018, 第 1 作者
(33) Room-temperature magnetoelectric effects in multiferroic y-type hexaferrites, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 第 4 作者
(34) Room-Temperature Nonvolatile Memory Based on a Single-Phase Multiferroic Hexaferrite, ADVANCED FUNCTIONAL MATERIALS, 2018, 第 2 作者
(35) 基于磁电耦合效应的基本电路元件和非易失性存储器, Fundamental circuit element and nonvolatile memory based on magnetoelectric effect, ACTA PHYSICA SINICA, 2018, 通讯作者
(36) Mimicking Synaptic Plasticity and Neural Network Using Memtranstors, ADVANCED MATERIALS, 2018, 通讯作者
(37) Electric control of exchange bias in multiferroic hexaferrite Ba0.4Sr1.6Mg2Fe12O22, PHYSICAL REVIEW B, 2018, 第 4 作者
(38) Magnetocaloric effect in the layered organic–inorganic hybrid(CH_3NH_3)_2CuCl_4, Magnetocaloric effect in the layered organic–inorganic hybrid(CH_3NH_3)_2CuCl_4, CHINESE PHYSICS B, 2018, 第 5 作者
(39) Magnetocaloric effect in the layered organic–inorganic hybrid(CH_3NH_3)_2CuCl_4, Magnetocaloric effect in the layered organic–inorganic hybrid(CH_3NH_3)_2CuCl_4, 中国物理B:英文版, 2018, 第 5 作者
(40) 基于磁电耦合效应的基本电路元件和非易失性存储器, 物理学报, 2018, 通讯作者
(41) Spin-induced multiferroicity in the binary perovskite manganite Mn2O3, NATURE COMMUNICATIONS, 2018, 第 4 作者
(42) Hidden spin-order-induced room-temperature ferroelectricity in a peculiar conical magnetic structure, PHYSICAL REVIEW B, 2017, 第 8 作者
(43) Direct measurement of thermoelectric properties of β-MnO2 in its powder form, Applied Physics Letters, 2017, 第 1 作者
(44) Synaptic Transistor Implemented Using Quasi-2D Molybdenum Oxide, Synaptic Transistor Implemented Using Quasi-2D Molybdenum Oxide, Advanced Materials, 2017, 第 1 作者
(45) Impact of Pressure on the Resonant Bonding in Chalcogenides, JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 第 7 作者
(46) Direct measurement of thermoelectric properties of beta-MnO2 in its powder form, APPLIED PHYSICS LETTERS, 2017, 第 5 作者
(47) Large pyroelectric and thermal expansion coefficients in the (CH3)(2)NH2Mn (HCOO)(3) metal-organic framework, APPLIED PHYSICS LETTERS, 2017, 第 5 作者
(48) Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 通讯作者
(49) A Synaptic Transistor based on Quasi-2D Molybdenum Oxide, ADVANCED MATERIALS, 2017, 通讯作者
(50) Giant magnetoelectric effects achieved by tuning spin cone symmetry in Y-type hexaferrites, NATURE COMMUNICATIONS, 2017, 第 8 作者
(51) A synaptic transistor based on quasi-two- dimensional molybdenum oxide, Advanced Materials, 2017, 通讯作者
(52) Memristive switching in Cu/Si/Pt cells and its improvement in vacuum environment, SOLID STATE IONICS, 2016, 通讯作者
(53) Realization of a flux-driven memtranstor at room temperature, CHINESE PHYSICS B, 2016, 通讯作者
(54) Quantum electric-dipole liquid on a triangular lattice, NATURE COMMUNICATIONS, 2016, 第 7 作者
(55) Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 
(56) Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures, APPLIED PHYSICS LETTERS, 2016, 通讯作者
(57) Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2/3)O3]0.7[PbTiO3]0.3/Ni Heterostructure, Physical Review Applied, 2016, 通讯作者
(58) A multilevel nonvolatile magnetoelectric memory, SCIENTIFIC REPORTS, 2016, 第 3 作者
(59) Nonvolatile Memory Based on Nonlinear Magnetoelectric Effects, PHYSICAL REVIEW APPLIED, 2016, 第 4 作者
(60) Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/Pbd(Mg1/3Nb2/3)O-3(0.7)PbTiO3(0.3)/Ni Heterostructure, PHYSICAL REVIEW APPLIED, 2016, 通讯作者
(61) Understanding the conductive channel evolution in Na:WO3-x-based planar devices, NANOSCALE, 2015, 通讯作者
(62) Enhancement of the thermoelectric properties of MnSb2Se4 through Cu resonant doping, RSC ADVANCES, 2015, 第 9 作者
(63) Toward the complete relational graph of fundamental circuit elements, CHINESE PHYSICS B, 2015, 第 1 作者
(64) Spin-driven multiferroics in BaYFeO4, JOURNAL OF APPLIED PHYSICS, 2015, 第 5 作者
(65) Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures, APPLIED PHYSICS LETTERS, 2013, 
(66) Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems, NANOTECHNOLOGY, 2013, 
(67) Resistance switching in oxides with inhomogeneous conductivity, CHINESE PHYSICS B, 2013, 通讯作者
(68) Pulse-induced alternation from bipolar resistive switching to unipolar resistive switching in the Ag/AgOx/MgZnO/Pt device, Journal of Physics D: Applied Physics, 2012, 第 1 作者
(69) Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices, APPLIED PHYSICS LETTERS, 2012, 
(70) Visualization of the conductive channel in a planar resistance switching device based on electrochromic materials, JOURNAL OF APPLIED PHYSICS, 2012, 
(71) Direct observation of local resistance switching in WO3 films, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 
(72) Buffer-layer-enhanced magnetic field effect in La0.5Ca0.5MnO3/LaMnO3/SrTiO3:Nb heterojunctions, JOURNAL OF APPLIED PHYSICS, 2011, 
(73) Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films, NANOTECHNOLOGY, 2011, 
(74) Influence of film thickness on the physical properties of manganite heterojunctions, JOURNAL OF APPLIED PHYSICS, 2011, 第 4 作者
(75) Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 
(76) Roles of silver oxide in the bipolar resistance switching devices with silver electrode, APPLIED PHYSICS LETTERS, 2011, 
(77) Interfacial barrier in manganite junctions with different crystallographic orientations, APPLIED PHYSICS LETTERS, 2010, 
(78) Ag-AL合金顶电极La0.7Ca0.3MnO3薄膜器件阻变行为疲劳性的改进, JOURNAL OF APPLIED PHYSICS, 2010, 第 5 作者
(79) Effect of temperature on the La1-xCaxMnO3/SrTiO3:Nb (x=0-0.75) heterojunctions, APPLIED PHYSICS LETTERS, 2010, 
(80) Endurance improvement of resistance switching behaviors in the La0.7Ca0.3MnO3 film based devices with Ag-Al alloy top electrodes, JOURNAL OF APPLIED PHYSICS, 2010, 
(81) Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing, APPLIED PHYSICS LETTERS, 2010, 
(82) Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 
(83) Bipolar Resistance Switching in Fully Transparent ZnO:Mg-Based Devices, APPLIED PHYSICS EXPRESS, 2009, 
(84) The polarity origin of the bipolar resistance switching behaviors in metal/La0.7Ca0.3MnO3/Pt junctions, APPLIED PHYSICS LETTERS, 2009, 
(85) Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions, APPLIED PHYSICS LETTERS, 2009, 
(86) Electronic transport and colossal electroresistance in SrTiO3:Nb-based Schottky junctions, APPLIED PHYSICS LETTERS, 2009, 
(87) Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes, JOURNAL OF APPLIED PHYSICS, 2009, 
(88) Crystallinity dependence of resistance switching in La0.7Ca0.3MnO3 films grown by pulsed laser deposition, JOURNAL OF APPLIED PHYSICS, 2009, 
(89) Electric pulse-induced resistance switching in (Bi2O3)0.7(Y2O3)0.3 films, Journal of Applied Physics, 2009, 第 1 作者
(90) Photoresponse of the Schottky junction Au/SrTiO3 : Nb in different resistive states, APPLIED PHYSICS LETTERS, 2008, 
(91) Effects of oxygen partial pressure on the resistance switching properties of La0.7Ca0.3MnO3 thin films prepared by pulsed laser deposition method, THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE, 2008, 
(92) Resistance dependence of photovoltaic effect in Au/SrTiO3:Nb(0.5 wt %) Schottky junctions, APPLIED PHYSICS LETTERS, 2008, 
(93) Reversible multilevel resistance switching of Ag-La0.7Ca0.3MnO3-Pt heterostructures, JOURNAL OF MATERIALS RESEARCH, 2008, 第 1 作者
(94) Asymmetric fatigue and its endurance improvement in resistance switching of ag-la0.7ca0.3mno3-pt heterostructures, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 
(95) "Positive" and "negative" electric-pulse-induced reversible resistance switching effect in Pr0.7Ca0.3MnO3 films", Applied Physics A - Materials Science and Processing, 2007, 第 2 作者
(96) Ag-La0.7Ca0.3MnO3-Pt异质结电阻转变特性与机制的研究, Resistance switching characteristics and mechanism in Ag-La0.7Ca0.3MnO3-Pt heterostructures, 2007, 第 1 作者
(97) "positive" and "negative" electric-pulse-induced reversible resistance switching effect in pr0.7ca0.3mno3 films, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 
(98) Asymmetric fatigue and its endurance improvement in resistance switching of Ag–La0.7Ca0.3MnO3–Pt heterostructures, J PHYS D: APPL PHYS, 2007, 第 1 作者
(99) Resistance and magnetization of La0. 7Ca0. 3MnO3 bulk at different resistance states induced by electric pulses, Journal of Physics D: Applied Physics, 2007, 第 1 作者
(100) Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures, PHYSICAL REVIEW B, 2006, 
(101) Resistance switching effect of Ag/Ln(1-x)Ca(x)MnO(3)/Pt sandwich structure, INTEGRATED FERROELECTRICS, 2006, 
(102) Temperature dependence of current-voltage characteristics of ag-la0.7ca0.3mno3-pt heterostructures, APPLIED PHYSICS LETTERS, 2006, 
(103) Effects of Ingredients and Post-heat Treatment on Phase Transformation and Structure of Bioactive Composite Coatings, Key Engineering Materials, 2005, 第 1 作者
(104) Study on the subsonic thermal sprayed Ti/bioglass composite coatings on titanium alloy, PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 
(105) Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag-La0.7Ca0.3MnO3-Pt sandwiches, APPLIED PHYSICS LETTERS, 2005, 
(106) Resistance switching driven by polarity and voltage of electric pulse in agla0.7ca0.3mno3pt sandwiches, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 
(107) 电结晶羟基磷灰石涂层结构的研究, Study on Structure of the Hydroxyapatite Coating Prepared by Electro-deposition, 中国表面工程, 2003, 第 2 作者
(108) Study on the subsonic speed flame spraying coating of hydroxyapatite, RARE METALS, 2003, 
(109) Hydroxyapatite graded coatings made through subsonic thermal spraying, FUNCTIONALLY GRADED MATERIALS VII, 2003, 
(110) Recent progress and prospect in bioactive composite coatings on metal substrate, Journal of Jiamusi University (Natural Science Edition), 2002, 第 1 作者
(111) Towards the Complete Relational Graph of Fundamental Circuit Elements, 

科研活动

   
科研项目
( 1 ) 基于磁电耦合材料的新型信息存储器件研究, 主持, 国家级, 2017-01--2020-12
( 2 ) 基于层状氧化物材料的神经突触晶体管, 主持, 国家级, 2019-01--2022-12
( 3 ) 存算一体器件及其计算新架构, 主持, 国家级, 2019-09--2024-08
( 4 ) 基于混合器件的神经形态计算架构及芯片研究, 参与, 国家级, 2020-11--2025-10
( 5 ) 存算一体基础器件与系统前沿科学, 参与, 部委级, 2020-01--2024-12
( 6 ) 金属/绝缘体随机混合体系阻变效应研究, 主持, 国家级, 2013-01--2016-12
( 7 ) 巨电致电阻效应中导电路径的形成与演变过程研究, 主持, 国家级, 2011-01--2013-12
( 8 ) 新型电致电阻材料的物理机制, 参与, 国家级, 2013-01--2017-12
参与会议
(1)Few-shot graph learning with robust and energy-efficient memory-augmented graph neural network (MAGNN) based on homogeneous computing-in-memory   2022超大规模集成电路国际研讨会   2022-06-13
(2)3D reservoir computing with high area efficiency (5.12 TOPS/mm2) implemented by 3D dynamic memristor array for temporal signal processing   2022超大规模集成电路国际研讨会   2022-06-13
(3)Oxide-based electrolyte-gated transistor for neuromorphic computing   2021忆阻材料、器件与系统国际研讨会    2021-11-03
(4)氧化物电解质栅控离子晶体管及其神经形态计算   第二十三届全国半导体物理学术会议   2021-07-09
(5)Energy efficient and robust reservoir computing system using ultrathin (3.5 nm) ferroelectric tunneling junctions for temporal data learning   超大规模集成电路国际研讨会   2021-06-15
(6)Fully memristive SNNs with temporal coding for fast and low-power edge computing   2020国际电子器件大会   2020-12-14
(7)Experimental demonstration of conversion-based SNNs with 1T1R Mott neurons for neuromorphic inference   2019国际电子器件大会   2019-12-09
(8)Electrolyte-Gated Synaptic Transistor for Neuromorphic Computing   2019忆阻材料、器件与系统国际研讨会   尚大山   2019-07-09
(9)Synaptic Transistors Based on Layered Molybdenum Oxide   第2次中德电子和存储材料研讨会   尚大山   2018-09-05
(10)Nonvolatile memory and neuromorphic functions based on magnetoelectric effect   欧洲先进材料会议   尚大山   2018-08-24
(11)Electrochemcial synaptic transistors based on two-dimensional molybdenum oxide   2018材料研究会春季会议   尚大山   2018-04-02

合作情况

   
项目协作单位

复旦大学

香港大学

中国科学技术大学

清华大学

中国科学院物理研究所