General

Puqi Ning

npq@mail.iee.ac.cn

Institute of electrical engineering, CAS

No.6 Zhongguancun Beiertiao, Haidian District, Beijing, China

Research Areas

  1. Wide bandgap semiconductors in application
  2. High temperature power module packaging
  3. High power density inverter for motor drive


Education

  • August 2006 - May 2010: Virginia Polytechnic Institute and State University (USA), Ph.D.
  • September 2004 - July 2006: Tsinghua University, Master's degree
  • September 2000 - July 2004: Tsinghua University, Bachelor's degree


Experience

   
Work Experience
  • 2014 - present: Institute of Electrical Engineering, Chinese Academy of Sciences, professor
  • 2013 - 2014: Institute of Electrical Engineering, Chinese Academy of Sciences, Associate professor
  • 2011 - 2013: Oak Ridge National Laboratory (USA), Associate Researcher
  • 2010 - 2011: Oak Ridge National Laboratory (USA), Pos-tdoctor


Teaching Experience

Publications

   
Papers

1. An Automatic Optimization Method for Electrical and Thermal Performance of Stacked DBC Power Module, Xiaoshuang Hui; Puqi Ning; Tao Fan; Yuhui Kang; Kai Wang; Yunhui Mei,IEEE Journal of Emerging and Selected Topics in Power Electronics, 2024, 12(6): 5901-5914.

2. Improved Power Semiconductor Dynamic Testing Circuit to Suppress Leakage Current, Hui, Xiaoshuang; Ning, Puqi; Zheng, Dan; Fan, Tao; Wang, Kai; Mei, Yunhui, IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2024, 12(6): 5715-5723.  

3. A Novel Multiple DBC-staked units Package to Parallel More Chips for SiC Power Module, Hui, Xiaoshuang; Ning, Puqi; Fan, Tao; Kang, Yuhui; Wang, Kai; Mei, Yunhui; Lei, Guangyin, CES TRANSACTIONS ON ELECTRICAL MACHINES AND SYSTEMS, 2024, 8(1): 72-79.

4. Investigation on the novel high-performance copper/graphene composite conductor for high power density motor, Jiaxiao Wang; Tingting Zuo; Jiangli Xue; Yadong Ru; Yue Wu; Zhuang Xu; Yongsheng Liu; Zhaoshun Gao; Puqi Ning; Tao Fan; Xuhui Wen; Li Han; Liye Xiao, CES Transactions on Electrical Machines and Systems, 2024, 1-6

5. Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical Parameter, Cao Han; Ning Puqi; Huang Yunhao; Wen Xuhui, CSEE Journal of Power and Energy Systems, 2024, 10(4): 1799-1807.  

6. Review of Thermal Design of SiC Power Module for Motor Drive in Electrical Vehicle Application, Ning Puqi; Hui Xiaoshuang; Li Dongrun; Kang Yuhui; Yang Jiajun; Liu Chaohui, CES Transactions on Electrical Machines and Systems, 2024, 8(3): 332-346.

7. Review of Hybrid Packaging Methods for Power Modules, Puqi Ning; Xiaoshuang Hui; Yuhui Kang; Tao Fan; Kai Wang; Yunhui Mei; Guangyin Lei, Chinese Journal of Electrical Engineering, 2023, 9(4): 23-40.

8.  Local Interconnection Degradation of a Double-Sided Cooling SiC MOSFET Module under Power Cycling, Yue Chen; Yunhui Mei; Puqi Ning; Guoquan Lu, IEEE Transactions on Components, Packaging and Manufacturing Technology, 2023.  

9. On-Site Estimation of Thermal Resistance Degradation of Double-Sided Cooling (DSC) Power Modules Under Power Cycling Conditions, Yue Chen; Yun-Hui Mei; Puqi Ning; Guo-Quan Lu, IEEE Journal of Emerging and Selected Topics in Power Electronics, 2023, 11(4): 4419-4429. 

10. Online Junction Temperature Measurement of Double-sided Cooling IGBT Power Module through On-state Voltage with High Current, Xiaoguang Chai; Puqi Ning; Han Cao; Dan Zheng; Huakang Li; Yunhao Huang; Yuhui Kang, Chinese Journal of Electrical Engineering, 2022, 8(4): 104-112





Patents
  1. Power module structure and power devices, Invention Patent, 2023, 2nd Author, Patent No.: CN116504722A
  2. A high-precision junction temperature online monitoring method and system, 2023, 2nd Author, Patent No.: CN113030682B
  3. A junction temperature online monitoring data verification system and method, 2023, 2nd Author, Patent No.: CN112986781B
  4. An online working sampling circuit, Invention Patent, 2022, 2nd Author, Patent No.: CN115542106A
  5. A quasi-online identification method and junction temperature calibration method and system for power module aging parameters, Invention Patent, 2022, 2nd Author, Patent No.: CN114924176A
  6. A quasi-online identification method and junction temperature calibration method and system for power module aging parameters, Invention Patent, 2022, 2nd Author, Patent No.: 202210524777.2
  7. A high-precision junction temperature online monitoring method and system, Invention Patent, 2021, 2nd Author, Patent No.: CN113030682A
  8. A junction temperature online monitoring data verification system and method, Invention Patent, 2021, 2nd Author, Patent No.: CN112986781A
  9. A layout optimization method, device, and storage medium for electric vehicle motor controller, Invention Patent, 2021, 2nd Author, Patent No.: CN112800547A
  10. A SiC-based MOSFET junction temperature online monitoring system and method, Invention Patent, 2021, 2nd Author, Patent No.: CN112229530A
  11. An online measurement circuit for IGBT on-state voltage drop and junction temperature detection method, Invention Patent, 2020, 2nd Author, Patent No.: CN111812479A
  12. A hybrid power electronic module of Si IGBT and SiC MOSFET, Invention Patent, 2018, 2nd Author, Patent No.: CN108649772A
  13. A power converter layout method, Invention Patent, 2017, 2nd Author, Patent No.: CN107506530A
  14. An IGBT junction temperature measurement device, Invention Patent, 2016, 2nd Author, Patent No.: CN106199367A
  15. An IGBT output characteristic test device, Invention Patent, 2016, 2nd Author, Patent No.: CN105445639A
  16. A design method for common-mode electromagnetic interference filter in motor drive system, Invention Patent, 2016, 2nd Author, Patent No.: CN105354397A
  17. A dual-pulse generator with adjustable pulse width, Invention Patent, 2016, 2nd Author, Patent No.: CN105306026A
  18. An IGBT model for electromagnetic interference simulation analysis, Invention Patent, 2016, 2nd Author, Patent No.: CN105279339A
  19. A current measurement device, Utility Model, 2015, 2nd Author, Patent No.: CN104297558A
  20. A current measurement device, Invention Patent, 2010, 2nd Author, Patent No.: CN101839936A


Honors & Distinctions

  1. "Ninth Chinese Overseas Chinese Contribution Award" by the Chinese Overseas Chinese Federation, Second Prize, Ministerial Level, 2022
  2. Best Paper Award at the IEEE EVS34 Conference, Other, 2021
  3. Technical Invention Award by the Electrical Engineering Society, First Prize, Other, 2020
  4. First Prize for Technical Invention by the Power Supply Society, First Prize, Provincial Level, 2019
  5. Best Paper Award at the IEEE CIEEC 2019, First Prize, Other, 2019
  6. Best Paper Award at the IEEE PCIM ASIA 2017, First Prize, Other, 2019
  7. First CASA Third-Generation Semiconductor Outstanding Innovation Youth, First Prize, Other, 2016