Dr.  X. F. Liu received his Bachelor degree in Materials Science and Engineering from 

Central South University of Technology, and Master degree in Material Physics & Chemistry from 

Central South University. He received his Ph.D degree in Material Physics & Chemistry in 2007 from 

Graduate University of Chinese Academy of Sciences (UCAS). After that, he continued his research career at 

Institute of Semiconductors, Chinese Academy of Sciences.

Dr. Liu's research specialties are mainly to silicon carbide semiconductor epitaxy and power device development.  

He has published more than 40 SCI papers in well-known academic journals such as Appl Phys Lett, 

J Cryst Growth, IEEE Electron Device Lett, Crystals, Appl Surf Sci, Chin Phys B, RSC Adv, etc., 

and get more than 10 patents. He has made some important achievements in chemical vapor deposition 

flow field design, rapid epitaxy growth, PNPN epilayers preparation and related SiC power devices 

with high performance.