Name:                Junxi Wang

Title:                  Professor

Birth Date:         July 27, 1975

Gender:              Male

Health:               Excellent

Marital status:    Married

Nationality:        P.R.CHINA

Telephone:        +8610-82305247

Mobile:              +86 136 8358 7121


Research Areas

Nitride-based materials growth;

UV, Green and Blue LED&LD;

Optoelectronic device;


Sep. 2000- Jun. 2003               Institute of Semiconductors

                                                   Chinese Academy of Sciences, Beijing, P.R.China

                                                   Ph.D. degree in Material Physics and Chemistry awarded in August 2003.

                                                   Ph.D. Thesis Topic: MBE based GaN materials growth and Device Fabrication for microelectronic applications. 

Sep. 1998- Aug. 2000            Joint-Educationed by

                                                   Northwest University, Xi’an, P.R.China.   And

                                                   Institute of Semiconductors

                                                   Chinese Academy of Sciences, Beijing, P.R.China

                                                   M.S. degree in Physics awarded in June 2000

                                                   M.S. Thesis Topic: Growth and characterization of GaN grown by NH3-MBE

Sep. 1994- Aug. 1998            Northwest University, Xi’an, P.R.China

                                                   B.S. degree in Physics awarded in June 1998

Sep. 1991- Aug. 1994            High School of Xi’an City, Xi’an, P.R.China

                                                   High school.

Sep. 1988- Aug. 1991            The Sixth School of Xi’an City, Xi’an, P.R.China

                                                   Junior High School


Work Experience

2003.7 – 2007.10 Assistant Professor, Institute of Semiconductors, CAS

                                Beijing, P.R. China

2007.11 – present Professor, Institute of Semiconductors, CAS

                                Beijing, P.R. China


(1) Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate, nanoscale, 2018
(2) Crystallographic orientation control and optical properties of GaN nanowires, The Royal Society of Chemistry, 2018
(3) Highly Uniform White Light-Based Visible Light Communication Using Red, Green, and Blue Laser Diodes, IEEE Photonics Journal, 2018
(4) Composite degradation model and corresponding failure mechanism for mid-power GaN-based white LEDs, AIP Advances, 2018
(5) Exploration of photosensitive polyimide as the modification layer in thin film microcircuit, journal of semiconductors, 2018
(6) 71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation, optics express, 2017
(7) AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices, Superlattices and Microstructures
(8) Aluminum nitride-on-sapphire platform for integrated high-Q microresonators, optics express, 2017
(9) Characteristics of III-nitride based laser diode employed for short range underwater wireless optical communications, Optics Communications, 2017
(10) Deep-ultraviolet stimulated emission from AlGaN/AlN multiple-quantum-wells on nano-patterned AlN/sapphire templates with reduced threshold power density, Journal of Alloys and Compounds, 2017
(11) Effects of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si(100) substrate, OPTOELECTRONICS LETTERS
(12) Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN Multiple Quantum Wells with periodicity-wavelength matched nanostructure array, Nanoscale, 2017
(13) Growth mechanism of AlN on hexagonal BN/ sapphire substrate by metal–organic chemical vapor deposition, CrystEngComm, 2017
(14) Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy, Shaoteng Wu, Liancheng Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Guodong Yuan, Junxi Wang, and Jinmin Li, 2017
(15) Integrated continuous-wave aluminum nitride Raman laser, optica, 2017
(16) Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening, APPLIED PHYSICS LETTERS, 2017
(17) Nanostructure nitride light emitting diodes via the Talbot effect using improved colloidal photolithography, Nanoscale, 2017
(18) Optically pumped lasing with a Q-factor exceeding 6000 from wet-etched GaN micro-pyramids, optics letters, 2017
(19) Research on phosphor-conversion laser-based white light used as optical source of VLC and illumination, Opt Quant Electron, 2017
(20) Sapphire substrate sidewall shaping of deep ultraviolet light-emitting diodes by picosecond laser multiple scribing, Applied Physics Express, 2017
(21) Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography, Nanotechnology, 2017
(22) The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers, Journal of Semiconductors, 2017
(23) Ultraviolet Wavelength Identification Using Energy Distribution of Hot Electrons, ACS OMEGA, 2017
(24) Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film, Japanese Journal of Applied Physics, 2017
(25) Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness, MRS Advances, 2016
(26) Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides, Scientific Reports, 2016
(27) Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition, CHIN. PHYS. LETT., 2016
(28) Recent progress of research on III-nitride deep ultraviolet light-emitting diode, SCIENTIA SINICA Physica, Mechanica & Astronomica, 2015
(29) Enhancement of the modulation bandwidth for GaN-based light-emitting diode by surface plasmons, Optics Express, 2015
(30) Multiple-exposure colloidal lithography for enhancing light output of GaN-based light-emitting diodes by patterning Ni/Au electrodes, Optics Express, 2015
(31) AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE, Journal of Crystal Growth, 2015
(32) Efficiency improvementofInGaNlightemittingdiodeswithembedded, Journal of Crystal Growth, 2015
(33) The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing, AIP ADVANCES, 2014
(34) Investigation of Efficiency and Droop, IEEE Photonics, 2014
(35) Characterization of nitride-based LED materials, Surf. Interface Anal., 2014
(36) Enhanced light extraction of InGaN emitting diodes with photonic crystal selectively grown on p-GaN using nanospherical-lens lithography, J. Semicond., 2013
(37) Ferromagnetism and its stability in n-type Gd-doped GaN: First-principles calculation, Appl. Phys. Lett. , 2012
(38) Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes, Appl. Phys. Lett., 2012
(39) Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes, Appl. Phys. Lett. , 2011


(1) White light emitting diode of a blue and yellow light emitting (structure) layer stacked structure and method of manufacturing the same, US20060043385A1

(2) Packaging structure of light emitting diode and method of manufacturing the same, US9246052B2

(3) Multi-functional online testing system for semiconductor light-emitting devices or modules and method thereof, US9091721B2

(4) Methods of fabricating polygon-sectional rodlike ingot and substrate with orientation marker or rounded corners, rodlike ingot and substrate, US20160201220A1

(5) Gan-based vertical structure led applying graphene film current expansion layer, US20140151632A1

(6) Method of aligning quadrate wafer in first photolithography process, US9791790B2


Research Interests

1. Growth & Characterization of Nitrides Semiconductor Materials

2. LED Materials and Devices

3. LED Applications


(1)Research Progress on AlGaN-based Ultraviolet   2017-09-18

(2)Research Status and Development Trend of Deep Ultraviolet Light Emitting Diodes   The 2th China Symposium on the Wide band gap semiconductor   2017-08-10

(3)Generation of Solar Spectrum by Using LEDs 15th International Conference on Solid State Lighting and LED-Based Illumination Systems 2016-08-31

(4) Study on AlN-based Hybrid Bulk Acoustic Wave Resonator with Low Temperature Coefficient of Frequency 13th China International Forum on Solid State Lighting / International Forum on Wide Bandgap Semiconductors China 2016-11-15

(5) Visible light communication and lighting using Laser Diodes 16th International Conference on Numerical Simulation of Optoelectronic Devices 2016-07-15

(6) Growth and optical properties of gallium nitride film on glass substrates 11th International Conference on Nitride Semiconductors  2015-08-30



贠利君  硕士研究生  080501-材料物理与化学  

张宁  博士研究生  080501-材料物理与化学  

羊建坤  博士研究生  080501-材料物理与化学  

冯向旭  博士研究生  080501-材料物理与化学  

董鹏  博士研究生  080501-材料物理与化学  

付丙磊  博士研究生  080501-材料物理与化学  

张勇辉  博士研究生  080501-材料物理与化学  

朱邵歆  博士研究生  080501-材料物理与化学  

黄宇亮  硕士研究生  080501-材料物理与化学  

任鹏  博士研究生  080501-材料物理与化学  

赵云  博士研究生  080501-材料物理与化学  

张硕  硕士研究生  080903-微电子学与固体电子学  

郭亚楠  博士研究生  080501-材料物理与化学  

熊卓  博士研究生  080501-材料物理与化学  

孙雪娇  博士研究生  080903-微电子学与固体电子学  

吴卓辉  硕士研究生  080903-微电子学与固体电子学  

冯梁森  博士研究生  080501-材料物理与化学  

张翔  博士研究生  080501-材料物理与化学  

杨帅  博士研究生  080903-微电子学与固体电子学  

杨宇铭  硕士研究生  080903-微电子学与固体电子学  

张亮  博士研究生  080501-材料物理与化学  

常洪亮  博士研究生  080903-微电子学与固体电子学  

赵捷  博士研究生  080903-微电子学与固体电子学  


梁冬冬  博士研究生  080903-微电子学与固体电子学  

李燕  博士研究生  0805Z2-半导体材料与器件  

陈仁锋  硕士研究生  080501-材料物理与化学  

王新维  博士研究生  080903-微电子学与固体电子学  

张琪  硕士研究生  085400-电子信息  

王大地  博士研究生  080501-材料物理与化学  

蒋宗霖  硕士研究生  080903-微电子学与固体电子学  

王璐璐  博士研究生  080903-微电子学与固体电子学  

吴涵  硕士研究生  085400-电子信息  

张睿洁  博士研究生  080903-微电子学与固体电子学  

Honors & Distinctions

(1) Key Technologies of Gallium Nitride Based UV and Deep UV LEDs, Second Prize, National level, 2015

(2) Low thermal resistance and high luminous efficiency sapphire-based GaN LED material epitaxy and chip technology, Second Prize, National level, 2014

(3) High performance high power LEDs epitaxy, chip and integration technology, First Prize, Provincial level, 2012

(4) High quality GaN epitaxial material, Second Prize, Provincial level, 2012