1999.9.-2003.6. Fudan Univeristy -                                        Bachelor

2003.7.-2008.7. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences-                       Master-PhD

2010-Present Associate Professor in CAS (National Natural Science Foundation Grant No. 61106090, 61574147)

2013-2014 Visitng Scholar in University of Cambridge

2009-2010 Visitng Researcher in Yale University

2010-Present Associate Professor in CAS (National Natural Science Foundation Grant No. 61106090, 61574147)

2013-2014 Visitng Scholar in University of Cambridge

2009-2010 Visitng Researcher in Yale University

1.        Qi, S., Cunha, J., Guo, T.-L., Chen, P., Proietti Zaccaria, R., Dai, M. Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint. Adv. Sci. (2019).

2.        Chen, P., Zhang, X., Jiang, K., Zhang, Q., Qi, S., Man, W., Webster. T. J., & Dai, M. Change of Nano Material Electrical Characteristics for Medical System Applications. Int. J. Nanomed. 14, 10119 (2019).

3.        Dai, M., Yang, W., Li, M., Zhang, L., Huo, C., Dong, Y., & Webster, T. J. One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications. Adv. Electron. Mater. 5, 1900262 (2019).

4.        Huo, C., Dai, M., Hu, Y., Zhang, X., Wang, W., Zhang, H., Jiang. K., Wang. P., Webster. T. J., Guo. L., & Zhu, W. Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications. Int. J. Nanomed. 14, 8685 (2019).

5.        Dai, M., Hu, Y., Huo, C., Webster, T. J., & Guo, L. A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications. Int. J. Nanomed. 14, 5691 (2019).

6.        Zhang, Q., Qi, S., Dai, C., Chen, R., Wu, Z., Zhang, X., Juodkazis. S., Zhang. H., Dai. M., & Wang, P. Advanced Design and Electrical Properties Simulation of Two-Dimensional Photovoltaic Devices. J. Phys. Chem. C 123, 11347-11350 (2018).

7.        Wang, W., Wang, P., & Dai, M. Simplification of sub-gap density of states extraction method for amorphous In-Ga-Zn-O thin-film transistors by a single capacitance-voltage curve. Microelectron. Reliab. 83, 111-114 (2018).

8.        Dai, M., Guan, J., & Song, Z. A memory structure with different control gates. Adv. Electron. Mater. 4, 1800186 (2018).

9.        Zhang, Q., Dai, M., Shao, H., Tian, Z., Lin, Y., Chen, L., & Zeng, X. C. Insights into High Conductivity of the Two-Dimensional Iodine-Oxidized sp2-c-COF. ACS Appl. Mater. Interfaces 10, 43595-43602 (2018).

10.    Dai, M., Huo, C., Zhang, Q., Khan, K., Zhang, X., & Shen, C. Electrochemical Mechanism and Structure Simulation of 2D Lithium‐Ion Battery. Adv. Theory Simul. 1, 1800023 (2018).

11.    Dai, M., Wang, W., Wang, P., Iqbal, M. Z., Annabi, N., & Amin, N. Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor. Sci. Rep. 7, 10997 (2017).

12.     Wang, W., Khan, K., Zhang, X., Qin, H., Jiang, J., Miao, L., Jiang. K., Wang. P., Dai. M., & Chu, J. A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors. Microelectron. Reliab. 60, 67–69 (2016). 

13.    Dai, M., Khan, K., Zhang, S., Jiang, K., Zhang, X., Wang, W., Liang. L., Cao. H., Wang. P., Wang. P., Miao. L., Qin. H., Jiang. J., Xue. L., & Miao, L. A direct method to extract transient sub-gap density of state (DOS) based on dual gate pulse spectroscopy. Sci. Rep. 6, 24096 (2016). 

14. Dai, M., Dai, N., Logic Circuit Funcion Realization by One Transistor. Nano Letters. 2012.

Nanoelectronic and Photonics Device Physics, Modeling, Processing, Characterization and Design