基本信息
戴明志  女  博导  中国科学院宁波材料技术与工程研究所
电子邮件: daimz@nimte.ac.cn
通信地址: 中国浙江省宁波市镇海区庄市大道519号C416
邮政编码: 315201

研究领域

纳米电子学

光电子学

器件和电路物理、模拟、表征、设计与工艺

招生信息

   
招生专业
080501-材料物理与化学
招生方向
功能材料与纳米器件,新能源技术
光电器件和电路设计

教育背景

2003-07--2008-07   上海微系统与信息技术研究所   博士
1999-09--2003-06   复旦大学   本科

工作经历

2010-Present Associate Professor in CAS (National Natural Science Foundation Grant No. 61106090, 61574147)

2013-2014 Visitng Scholar in University of Cambridge

2009-2010 Visitng Researcher in Yale University


工作简历
2010-08~现在, 宁波材料技术与工程研究所, 副研究员
2009-06~2010-05,耶鲁大学电子工程系, 访问学者

专利与奖励

   
奖励信息
(1) Research Exchange with China and India Award, 其他, 2013

出版信息

1.        Qi, S., Cunha, J., Guo, T.-L., Chen, P., Proietti Zaccaria, R., Dai, M. Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint. Adv. Sci. 1901224 (2019).

2.        Chen, P., Zhang, X., Jiang, K., Zhang, Q., Qi, S., Man, W., Webster. T. J., & Dai, M. Change of Nano Material Electrical Characteristics for Medical System Applications. Int. J. Nanomed. 14, 10119 (2019).

3.        Dai, M., Yang, W., Li, M., Zhang, L., Huo, C., Dong, Y., & Webster, T. J. One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications. Adv. Electron. Mater. 5, 1900262 (2019).

4.        Huo, C., Dai, M., Hu, Y., Zhang, X., Wang, W., Zhang, H., Jiang. K., Wang. P., Webster. T. J., Guo. L., & Zhu, W. Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications. Int. J. Nanomed. 14, 8685 (2019).

5.        Dai, M., Hu, Y., Huo, C., Webster, T. J., & Guo, L. A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications. Int. J. Nanomed. 14, 5691 (2019).

6.        Zhang, Q., Qi, S., Dai, C., Chen, R., Wu, Z., Zhang, X., Juodkazis. S., Zhang. H., Dai. M., & Wang, P. Advanced Design and Electrical Properties Simulation of Two-Dimensional Photovoltaic Devices. J. Phys. Chem. C 123, 11347-11350 (2018).

7.        Wang, W., Wang, P., & Dai, M. Simplification of sub-gap density of states extraction method for amorphous In-Ga-Zn-O thin-film transistors by a single capacitance-voltage curve. Microelectron. Reliab. 83, 111-114 (2018).

8.        Dai, M., Guan, J., & Song, Z. A memory structure with different control gates. Adv. Electron. Mater. 4, 1800186 (2018).

9.        Zhang, Q., Dai, M., Shao, H., Tian, Z., Lin, Y., Chen, L., & Zeng, X. C. Insights into High Conductivity of the Two-Dimensional Iodine-Oxidized sp2-c-COF. ACS Appl. Mater. Interfaces 10, 43595-43602 (2018).

10.    Dai, M., Huo, C., Zhang, Q., Khan, K., Zhang, X., & Shen, C. Electrochemical Mechanism and Structure Simulation of 2D Lithium‐Ion Battery. Adv. Theory Simul. 1, 1800023 (2018).

11.    Dai, M., Wang, W., Wang, P., Iqbal, M. Z., Annabi, N., & Amin, N. Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor. Sci. Rep. 7, 10997 (2017).

12.     Wang, W., Khan, K., Zhang, X., Qin, H., Jiang, J., Miao, L., Jiang. K., Wang. P., Dai. M., & Chu, J. A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors. Microelectron. Reliab. 60, 67–69 (2016). 



发表论文
(1) A memory structure with different control gates, Advanced Electronic Materials, 2018, 第 1 作者
(2) Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor, Scientific Reports, 2017, 第 1 作者
(3) A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy., Scientific Reports, 2016, 通讯作者
(4) Logic Circuit Function Realization by One Transistor, Nano Letters, 2012, 第 1 作者
(5) Modeling of low-voltage oxide-based electric-double-layer thin-film transistors fabricated at room temperature, Applied Physics Letters, 2011, 第 1 作者
(6) Density-of-State and Trap Modeling of Oxide-Based Electric-Double-Layer TFTs, IEEE Electron Device Letters, 2011, 第 1 作者
(7) Modeling of Self-Assembled Inorganic Oxide Semiconductor Based-Electric-Double-Layer Thin Film Transistors, Applied Physics Letters, 2011, 第 1 作者

科研活动

   
参与会议
(1)Bias Instability Study of Low-Voltage Electric-Double-Layer Thin-Film Transistors   Mingzhi Dai   2011-07-01