纳米电子学

光电子学

器件和电路物理、模拟、表征、设计与工艺

   

080501-材料物理与化学

功能材料与纳米器件，新能源技术
光电器件和电路设计

2003-07--2008-07   上海微系统与信息技术研究所   博士
1999-09--2003-06   复旦大学   本科

2010-Present Associate Professor in CAS (National Natural Science Foundation Grant No. 61106090, 61574147)

2013-2014 Visitng Scholar in University of Cambridge

2009-2010 Visitng Researcher in Yale University

2010-08~现在, 宁波材料技术与工程研究所, 副研究员
2009-06~2010-05,耶鲁大学电子工程系, 访问学者

   

（1） Research Exchange with China and India Award, 其他, 2013

[1] 乔海, 张驰, 戴明志, 李荣, 张杰, 陈思鲁, 杨桂林. 一种MOS器件漏电流瞬态采样装置. CN: CN212134921U, 2020-12-11.
[2] 戴明志. 场效应晶体管、显示元件、图像显示装置及其制作方法. CN: CN109728101A, 2019-05-07.
[3] 戴明志. 能带缺陷密度分布的测试方法. CN: CN106546638B, 2019-02-26.
[4] 戴明志. 场效应晶体管、存储记忆体及其应用. 中国: CN108767014A, 2018.11.06.
[5] 戴明志. 场效应晶体管及其应用. 中国: CN108767015A, 2018-11-06.
[6] 戴明志. 一种基于多顶栅结构的晶体管. 中国: CN103956383B, 2018-04-20.
[7] 戴明志. 自驱动发光薄膜晶体管，薄膜晶体管阵列及显示装置. 中国: CN106684153A, 2017-05-17.
[8] 戴明志. 太阳能和锂离子电池一体化器件. 中国: CN106684182A, 2017-05-17.
[9] 戴明志. 太阳能电池及其制造方法. 中国: CN106558625A, 2017-04-05.
[10] 戴明志. 基于晶体管结构的存储器单元. 中国: CN106158863A, 2016-11-23.
[11] 戴明志, 叶继春. 一种匀胶机. 中国: CN204247481U, 2015-04-08.
[12] 戴明志. 一种肩带式晴雨伞. 中国: CN204105083U, 2015-01-21.
[13] 戴明志. 一种具有改良栅结构的晶体管. 中国: CN103579349A, 2014-02-12.
[14] 戴明志. 一种改良栅结构的晶体管. 中国: CN103178116A, 2013.06.26.

1.        Qi, S., Cunha, J., Guo, T.-L., Chen, P., Proietti Zaccaria, R., Dai, M. Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint. Adv. Sci. 1901224 (2019).

2.        Chen, P., Zhang, X., Jiang, K., Zhang, Q., Qi, S., Man, W., Webster. T. J., & Dai, M. Change of Nano Material Electrical Characteristics for Medical System Applications. Int. J. Nanomed. 14, 10119 (2019).

3.        Dai, M., Yang, W., Li, M., Zhang, L., Huo, C., Dong, Y., & Webster, T. J. One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications. Adv. Electron. Mater. 5, 1900262 (2019).

4.        Huo, C., Dai, M., Hu, Y., Zhang, X., Wang, W., Zhang, H., Jiang. K., Wang. P., Webster. T. J., Guo. L., & Zhu, W. Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications. Int. J. Nanomed. 14, 8685 (2019).

5.        Dai, M., Hu, Y., Huo, C., Webster, T. J., & Guo, L. A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications. Int. J. Nanomed. 14, 5691 (2019).

6.        Zhang, Q., Qi, S., Dai, C., Chen, R., Wu, Z., Zhang, X., Juodkazis. S., Zhang. H., Dai. M., & Wang, P. Advanced Design and Electrical Properties Simulation of Two-Dimensional Photovoltaic Devices. J. Phys. Chem. C 123, 11347-11350 (2018).

7.        Wang, W., Wang, P., & Dai, M. Simplification of sub-gap density of states extraction method for amorphous In-Ga-Zn-O thin-film transistors by a single capacitance-voltage curve. Microelectron. Reliab. 83, 111-114 (2018).

8.        Dai, M., Guan, J., & Song, Z. A memory structure with different control gates. Adv. Electron. Mater. 4, 1800186 (2018).

9.        Zhang, Q., Dai, M., Shao, H., Tian, Z., Lin, Y., Chen, L., & Zeng, X. C. Insights into High Conductivity of the Two-Dimensional Iodine-Oxidized sp2-c-COF. ACS Appl. Mater. Interfaces 10, 43595-43602 (2018).

10.    Dai, M., Huo, C., Zhang, Q., Khan, K., Zhang, X., & Shen, C. Electrochemical Mechanism and Structure Simulation of 2D Lithium‐Ion Battery. Adv. Theory Simul. 1, 1800023 (2018).

11.    Dai, M., Wang, W., Wang, P., Iqbal, M. Z., Annabi, N., & Amin, N. Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor. Sci. Rep. 7, 10997 (2017).

12.     Wang, W., Khan, K., Zhang, X., Qin, H., Jiang, J., Miao, L., Jiang. K., Wang. P., Dai. M., & Chu, J. A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors. Microelectron. Reliab. 60, 67–69 (2016). 

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[1] Wan, Juanyong, Wen, Rongjiang, Xia, Yonggao, Dai, Mingzhi, Huang, Huihui, Xue, Lingwei, Zhang, Zhiguo, Fang, Junfeng, Hui, Kwun Nam, Fan, Xi. All annealing-free solution-processed highly flexible organic solar cells. JOURNAL OF MATERIALS CHEMISTRY A[J]. 2021, 9(9): 5425-5433, http://dx.doi.org/10.1039/d0ta11831a.
[2] Dai, Chaoqi, Chen, Peiqin, Qi, Shaocheng, Hu, Yongbin, Song, Zhitang, Dai, Mingzhi. Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint. NANO RESEARCH[J]. 2021, 14(1): 232-238, http://lib.cqvip.com/Qikan/Article/Detail?id=7103999414.
[3] Ma, Mingming, Dai, Chaoqi, Luo, Kailin, Li, Shun, Chen, Jiahe, Li, Zhendong, Ren, Xiaodi, Wang, Deyu, He, Haiyong, Dai, Mingzhi, Peng, Zhe. Magnetohydrodynamic Interface-Rearranged Lithium Ions Distribution for Uniform Lithium Deposition and Stable Lithium Metal Anode. CHEMPHYSCHEM[J]. 2021, 22(10): 1027-1033, http://dx.doi.org/10.1002/cphc.202000897.
[4] Dai M, Wu Z, Qi S, Huo C, Zhang Q, Zhang X, Webster TJ, Zhang H. Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications. INTERNATIONAL JOURNAL OF NANOMEDICINE[J]. 2020, 15: 1863-1870, https://doaj.org/article/6d22522349d84b7a8e49c78d06fc671b.
[5] Dai, Chaoqi, Qi, Guoqiang, Qiao, Hai, Wang, Weiliang, Xiao, Han, Hu, Yongbin, Guo, Liqiang, Dai, Mingzhi, Wang, Pengjun, Webster, Thomas J. Modeling and Mechanism of Enhanced Performance of In-Ga-Zn-O Thin-Film Transistors with Nanometer Thicknesses under Temperature Stress. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2020, 124(41): 22793-22798, https://www.webofscience.com/wos/woscc/full-record/WOS:000582576200051.
[6] Dai C, Huo C, Qi S, Dai M, Webster T, Xiao H. Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness. INTERNATIONAL JOURNAL OF NANOMEDICINE[J]. 2020, 15: 8037-8043, https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7585798/.
[7] Qi, Shaocheng, Cunha, Joao, Guo, TianLong, Chen, Peiqin, Zaccaria, Remo Proietti, Dai, Mingzhi. Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint. ADVANCED SCIENCE[J]. 2020, 7(6): http://dx.doi.org/10.1002/advs.201901224.
[8] Qi S, Hu Y, Dai C, Chen P, Wu Z, Webster TJ, Dai M. Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate. INTERNATIONAL JOURNAL OF NANOMEDICINE[J]. 2020, 15: 6239-6245, https://doaj.org/article/0c35638c06d24714b06f9d6c7ca5f5f7.
[9] Hu Y, Guo LQ, Huo C, Dai M, Webster TJ, Ding J. Transparent Nano Thin-Film Transistors for Medical Sensors, OLED and Display Applications. INTERNATIONAL JOURNAL OF NANOMEDICINE[J]. 2020, 15: 3597-3603, https://doaj.org/article/60927b5717384c3c87e335933c4f352c.
[10] Huo C, Dai M, Hu Y, Zhang X, Wang W, Zhang H, Jiang K, Wang P, Webster TJ, Guo L, Zhu W. Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications. INTERNATIONAL JOURNAL OF NANOMEDICINE[J]. 2019, 14: 8685-8691, https://doaj.org/article/4d789810ddc342408763e41a64083538.
[11] Wen, Zhangping, Xu, Cheng, Qian, Xin, Zhang, Yonggang, Wang, Xuefei, Song, Shulin, Dai, Mingzhi, Zhang, Cheng. A two-step carbon fiber surface treatment and its effect on the interfacial properties of CF/EP composites: The electrochemical oxidation followed by grafting of silane coupling agent. APPLIED SURFACE SCIENCE[J]. 2019, 486: 546-554, http://dx.doi.org/10.1016/j.apsusc.2019.04.248.
[12] Dai M, Hu Y, Huo C, Webster TJ, Guo L. A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications. INTERNATIONAL JOURNAL OF NANOMEDICINE[J]. 2019, 14: 5691-5696, https://doaj.org/article/f6b4276d37904bdbb04428351211ac0d.
[13] Dai, Mingzhi, Yang, Wenwei, Li, Ming, Zhang, Lei, Huo, Changhe, Dong, Yemin, Webster, Thomas J. One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications. ADVANCED ELECTRONIC MATERIALS[J]. 2019, 5(8): [14] Chen P, Zhang X, Jiang K, Zhang Q, Qi S, Man W, Webster TJ, Dai M. Change Of Nano Material Electrical Characteristics For Medical System Applications. INTERNATIONAL JOURNAL OF NANOMEDICINE[J]. 2019, 14: 10119-10122, https://doaj.org/article/a982c6c05e284b1d8accf6701a64e197.
[15] Zhang, Qiang, Qi, Shaocheng, Dai, Chaozhu, Chen, Ruowang, Wu, Zhendong, Zhang, Xingye, Juodkazis, Saulius, Zhang, Hengbo, Dai, Mingzhi, Wang, Pengjun. Advanced Design and Electrical Properties Simulation of Two-Dimensional Photovoltaic Devices. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2019, 123(18): 11347-11350, [16] Dai, Mingzhi, Huo, Changhe, Zhang, Qiang, Khan, Karim, Zhang, Xingye, Shen, Cai. Electrochemical Mechanism and Structure Simulation of 2D Lithium-Ion Battery. ADVANCED THEORY AND SIMULATIONS[J]. 2018, 1(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000451894200008.
[17] Wang, Weiliang, Wang, Pengjun, Dai, Mingzhi. Simplification of sub-gap density of states extraction method for amorphous In-Ga-Zn-O thin-film transistors by a single capacitance-voltage curve. MICROELECTRONICS RELIABILITY[J]. 2018, 83: 111-114, http://dx.doi.org/10.1016/j.microrel.2018.01.007.
[18] Dai, Mingzhi, Guan, Jianmin, Song, Zhitang. A Memory Structure with Different Control Gates. ADVANCED ELECTRONIC MATERIALS[J]. 2018, 4(7): http://ir.nimte.ac.cn/handle/174433/17344.
[19] Zhang, Qiuju, Dai, Mingzhi, Shao, Hezhu, Tian, Ziqi, Lin, Yichao, Chen, Liang, Zeng, Xiao Cheng. Insights into High Conductivity of the Two-Dimensional Iodine-Oxidized sp(2)-c-COF. ACS APPLIED MATERIALS & INTERFACES[J]. 2018, 10(50): 43595-43602, http://dx.doi.org/10.1021/acsami.8b14446.
[20] Dai, Mingzhi, Wang, Weiliang, Wang, Pengjun, Iqbal, Muhammad Zahir, Annabi, Nasim, Amin, Nasir. Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor. SCIENTIFIC REPORTS[J]. 2017, 7(1): http://ir.nimte.ac.cn/handle/174433/13630.
[21] Wang, Weiliang, Khan, Karim, Zhang, Xingye, Qin, Haiming, Jiang, Jun, Miao, Lijing, Jiang, Kemin, Wang, Pengjun, Dai, Mingzhi, Chu, Junhao. A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors. MICROELECTRONICS RELIABILITY[J]. 2016, 60: 67-69, http://dx.doi.org/10.1016/j.microrel.2015.12.007.
[22] Dai, Mingzhi, Khan, Karim, Zhang, Shengnan, Jiang, Kemin, Zhang, Xingye, Wang, Weiliang, Liang, Lingyan, Cao, Hongtao, Wang, Pengjun, Wang, Peng, Miao, Lijing, Qin, Haiming, Jiang, Jun, Xue, Lixin, Chu, Junhao. A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy. SCIENTIFIC REPORTS[J]. 2016, 6: https://www.webofscience.com/wos/woscc/full-record/WOS:000377689600001.
[23] Wang, Weiliang, Khan, Karim, Zhang, Xingye, Qin, Haiming, Jiang, Jun, Miao, Lijing, Jiang, Kemin, Wang, Pengjun, Dai, Mingzhi, Chu, Junhao. A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors (vol 60, pg 67, 2016). MICROELECTRONICS RELIABILITYnull. 2016, 67: 159-159, https://www.webofscience.com/wos/woscc/full-record/WOS:000390724700023.
[24] Luo, Hao, Liang, Lingyan, Cao, Hongtao, Dai, Mingzhi, Lu, Yicheng, Wang, Mei. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters. ACS APPLIED MATERIALS & INTERFACES[J]. 2015, 7(31): 17023-17031, http://ir.nimte.ac.cn/handle/174433/12384.
[25] Wu, Guodong, Zhang, Hongliang, Zhu, Liqiang, Dai, Mingzhi, Cui, Ping, Wan, Qing. In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/SiO2 Electrolyte Dielectrics. IEEE ELECTRON DEVICE LETTERS[J]. 2012, 33(4): 531-533, http://www.irgrid.ac.cn/handle/1471x/755228.
[26] Dai, Mingzhi, Xu, Wangying. Polarization mechanism and quasi-electric-double-layer modeling for indium-tin-oxide electric-double-layer thin-film-transistors. APPLIED PHYSICS LETTERS[J]. 2012, 100(11): http://www.irgrid.ac.cn/handle/1471x/755222.
[27] Dai, Mingzhi, Dai, Ning. Logic Circuit Function Realization by One Transistor. NANO LETTERS[J]. 2012, 12(11): 5954-5956, https://www.webofscience.com/wos/woscc/full-record/WOS:000311244400088.
[28] Dai MZ, Wu GD, Yang Y, Huang J, Li L, Gong J, Wan Q. Modeling of self-assembled inorganic oxide semiconductor based electric-double-layer thin film transistors. 2011, http://www.irgrid.ac.cn/handle/1471x/754505.
[29] Dai, Mingzhi, Jiang, Jie, Yang, Yue, Wu, Guodong, Wan, Qing. Density-of-State and Trap Modeling of Low-Voltage Electric-Double-Layer TFTs. IEEE ELECTRON DEVICE LETTERS[J]. 2011, 32(4): 512-514, https://www.webofscience.com/wos/woscc/full-record/WOS:000288664800028.
[30] Lu, Aixia, Dai, Mingzhi, Sun, Jia, Jiang, Jie, Wan, Qing. Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates. IEEE ELECTRON DEVICE LETTERS[J]. 2011, 32(4): 518-520, https://www.webofscience.com/wos/woscc/full-record/WOS:000288664800030.
[31] Dai, Mingzhi, Wu, Guodong, Yang, Yue, Jiang, Jie, Li, Li, Wan, Qing. Modeling of low-voltage oxide-based electric-double-layer thin-film transistors fabricated at room temperature. APPLIED PHYSICS LETTERS[J]. 2011, 98(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000288026700091.
[32] Dai, Mingzhi, Wu, Guodong, Yang, Yue, Huang, Jin, Li, Li, Gong, Jun, Wan, Qing. Modeling of self-assembled inorganic oxide semiconductor based electric-double-layer thin film transistors. APPLIED PHYSICS LETTERS[J]. 2011, 98(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000289580800067.
[33] Dai, Mingzhi, Wan, Qing. Modeling Novel Double-in-Plane Gate Electric-Double-Layer Thin-Film and Nanoscale Transistors. NANO LETTERS[J]. 2011, 11(9): 3987-3990, https://www.webofscience.com/wos/woscc/full-record/WOS:000294790200083.
[34] Dai, Mingzhi, Li, Mingming, Wu, Guodong, Li, Li, Jin, Huang. Transient current mechanism of lead zirconate titanate capacitors sputtered on La0.65Sr0.35MnO3. MICROELECTRONICS RELIABILITY[J]. 2011, 51(5): 925-926, http://dx.doi.org/10.1016/j.microrel.2011.01.003.
[35] 戴明志. Density-of-State and Trap Modeling of Oxide-Based Electric-Double-Layer TFTs. IEEE Electron Device Letters. 2011, [36] Dai, Mingzhi, Gao, Chao, Yap, Kinleong, Shan, Yi, Cao, Zigui, Liao, Kuangyang, Wang, Liang, Cheng, Bo, Liu, Shaohua. A model with temperature-dependent exponent for hot-carrier injection in high-voltage nMOSFETs involving hot-hole injection and dispersion. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2008, 55(5): 1255-1258, http://ir.sim.ac.cn/handle/331004/94957.

   

（1）Bias Instability Study of Low-Voltage Electric-Double-Layer Thin-Film Transistors   Mingzhi Dai   2011-07-01