
电子邮件: daimz@nimte.ac.cn
通信地址: 中国浙江省宁波市镇海区庄市大道519号C416
邮政编码: 315201
研究领域
纳米电子学
光电子学
器件和电路物理、模拟、表征、设计与工艺
招生信息
招生专业
招生方向
教育背景
工作经历
2010-Present Associate Professor in CAS (National Natural Science Foundation Grant No. 61106090, 61574147)
2013-2014 Visitng Scholar in University of Cambridge
2009-2010 Visitng Researcher in Yale University
工作简历
专利与奖励
奖励信息
出版信息
1. Qi, S., Cunha, J., Guo, T.-L., Chen, P., Proietti Zaccaria, R., Dai, M. Bottom-Gate Approach for All Basic Logic Gates Implementation by a Single-Type IGZO-Based MOS Transistor with Reduced Footprint. Adv. Sci. 1901224 (2019).
2. Chen, P., Zhang, X., Jiang, K., Zhang, Q., Qi, S., Man, W., Webster. T. J., & Dai, M. Change of Nano Material Electrical Characteristics for Medical System Applications. Int. J. Nanomed. 14, 10119 (2019).
3. Dai, M., Yang, W., Li, M., Zhang, L., Huo, C., Dong, Y., & Webster, T. J. One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications. Adv. Electron. Mater. 5, 1900262 (2019).
4. Huo, C., Dai, M., Hu, Y., Zhang, X., Wang, W., Zhang, H., Jiang. K., Wang. P., Webster. T. J., Guo. L., & Zhu, W. Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications. Int. J. Nanomed. 14, 8685 (2019).
5. Dai, M., Hu, Y., Huo, C., Webster, T. J., & Guo, L. A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications. Int. J. Nanomed. 14, 5691 (2019).
6. Zhang, Q., Qi, S., Dai, C., Chen, R., Wu, Z., Zhang, X., Juodkazis. S., Zhang. H., Dai. M., & Wang, P. Advanced Design and Electrical Properties Simulation of Two-Dimensional Photovoltaic Devices. J. Phys. Chem. C 123, 11347-11350 (2018).
7. Wang, W., Wang, P., & Dai, M. Simplification of sub-gap density of states extraction method for amorphous In-Ga-Zn-O thin-film transistors by a single capacitance-voltage curve. Microelectron. Reliab. 83, 111-114 (2018).
8. Dai, M., Guan, J., & Song, Z. A memory structure with different control gates. Adv. Electron. Mater. 4, 1800186 (2018).
9. Zhang, Q., Dai, M., Shao, H., Tian, Z., Lin, Y., Chen, L., & Zeng, X. C. Insights into High Conductivity of the Two-Dimensional Iodine-Oxidized sp2-c-COF. ACS Appl. Mater. Interfaces 10, 43595-43602 (2018).
10. Dai, M., Huo, C., Zhang, Q., Khan, K., Zhang, X., & Shen, C. Electrochemical Mechanism and Structure Simulation of 2D Lithium‐Ion Battery. Adv. Theory Simul. 1, 1800023 (2018).
11. Dai, M., Wang, W., Wang, P., Iqbal, M. Z., Annabi, N., & Amin, N. Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor. Sci. Rep. 7, 10997 (2017).
12. Wang, W., Khan, K., Zhang, X., Qin, H., Jiang, J., Miao, L., Jiang. K., Wang. P., Dai. M., & Chu, J. A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors. Microelectron. Reliab. 60, 67–69 (2016).