基本信息
李彬鸿  男  硕导  中国科学院微电子研究所
电子邮件: libinhong@ime.ac.cn
通信地址: 北京市朝阳区北土城西路三号
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
先进工艺FDSOI器件及电路
集成电路电磁兼容研究方向
低功耗物联网芯片设计

教育背景

2008-09--2011-12   法国国立应用科学学院   博士
2005-09--2008-07   法国格勒诺布尔大学   硕士
2001-09--2005-07   复旦大学   本科

工作经历

   
工作简历
2008-09~2011-12,法国国立应用科学学院, 博士
2005-09~2008-07,法国格勒诺布尔大学, 硕士
2001-09~2005-07,复旦大学, 本科

专利与奖励

   
专利成果
( 1 ) 一种SOI器件结构及其制备方法, 2021, 第 3 作者, 专利号: 201910011391.X

( 2 ) 一种SOI器件结构及其制备方法, 2020, 第 3 作者, 专利号: 201910011393.9

( 3 ) 一种环形振荡器, 2017, 第 2 作者, 专利号: 201621371632X

( 4 ) 一种热阻获取方法, 2016, 第 2 作者, 专利号: CN201610632860.6

出版信息

   
发表论文
(1) Modify Power and Performance of 2-Dimensional MoS2 Field Effect Transistor, Research, 2023, 通讯作者
(2) T-Topology Coupler-Based Bandpass Negative Group Delay Active Circuit Design and Test, IEEE Design &Test, 2022, 第 4 作者
(3) 车规级芯片电磁兼容研究进展, Research Progresses on Electromagnetic Compatibility of Automotive-grade Chips, 安全与电磁兼容, 2022, 第 3 作者
(4) Design and Experimentation of Inductorless Low-Pass NGD Integrated Circuit in 180-nm CMOS Technology, IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 第 3 作者
(5) Back gate impact on SEU characterization of a Double SOI 4k-bit SRAM, MICROELECTRONICS RELIABILITY, 2022, 
(6) Total Ionizing Dose Radiation Effects Hardening Using Back-Gate Bias in Double-SOI Structure, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 第 5 作者
(7) Effects of proton and electron irradiations on the dielectric properties of epoxy/anhydride cured products, MICROELECTRONICS RELIABILITY, 2022, 
(8) Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 
(9) Examining the Thermal Stress Effect of Electromagnetic Susceptibility of Automotive CAN Controller, JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2021, 通讯作者
(10) Radiation hardness and abnormal photoresponse dynamics of the CH3NH3PbI3 perovskite photodetector, JOURNAL OF MATERIALS CHEMISTRY C, 2021, 第 10 作者
(11) Radiation Hardening Using Back-gate Bias in Double-SOI Structure, NSREC国际会议, 2021, 通讯作者
(12) 体Si和SOI工艺SRAM芯片电磁敏感度的温度效应, Temperature effect on electromagnetic sensitivity of SRAM chips in bulk Si and SOI technologies, 电波科学学报, 2021, 第 4 作者
(13) Single-event induced failure mode of PWM in DC/DC converter, MICROELECTRONICS RELIABILITY, 2020, 
(14) Mechanism Analysis of Proton Irradiation-Induced Increase of 3-dB Bandwidth of GaN-Based Microlight-Emitting Diodes for Space Light Communication, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 第 15 作者
(15) Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature, MICROELECTRONICS RELIABILITY, 2020, 第 4 作者
(16) 传导电磁干扰对绝缘衬底上硅工艺器件的影响研究, Study on the Influence of Conducted Electromagnetic Interference on Devices of Silicon on Insulated Process, 固体电子学研究与进展, 2020, 第 5 作者
(17) 考虑背栅偏置的FOI FinFET电流模型, Current Model of FOI FinFETs with Back-Gate Bias, 半导体技术, 2020, 第 4 作者
(18) A comparison study on electromagnetic susceptibility of current reference circuits with scaling-down technologies and schemes, MICROELECTRONICS RELIABILITY, 2020, 第 2 作者
(19) Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 其他(合作组作者)
(20) 基于谐波探测理论功率放大器线性化仿真研究, Application of Harmonic Probing Theory in the Linearization of Power Amplifier, 计算机仿真, 2020, 第 4 作者
(21) X射线和重离子辐射对GaN基发光二极管的影响, Influence of X-Ray and Heavy Ion Radiation on Properties of GaN-Based LEDs, 微处理机, 2019, 第 4 作者
(22) Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms, MATERIALS, 2019, 第 4 作者
(23) ime-Domain Experimentation of NGD Active RC-Network Cell, IEEETRANSACTIONSONCIRCUITSANDSYSTEMSIIEXPRESSBRIEFS, 2019, 通讯作者
(24) Proton and light ions induced SEU effect in a SOI SRAM with gold plated lid, MICROELECTRONICS RELIABILITY, 2019, 
(25) 基于参数选择的数字预失真处理, Digital Predistortion Based on Parameter Selection, 电讯技术, 2019, 第 4 作者
(26) 一种基于数字信号控制的CMOS神经元电路, A Digital-Controlled Silicon Neuron Circuit, 微电子学与计算机, 2019, 第 2 作者
(27) An SET Generation Circuit with Tunable Pulse Width, 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019, 第 4 作者
(28) 基于MOS技术的神经元电路研究进展, Research Status of Neuron Circuit Based on MOS Technology, 微电子学, 2019, 第 2 作者
(29) Comparison of the Total Dose Responses of Fully Depleted SOI nMOSFETs With Different Geometries for the Worst Case Bias Conditions, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 第 5 作者
(30) Negative Group Delay Theory of a Four-Port RC-Network Feedback Operational Amplifier, IEEE ACCESS, 2019, 通讯作者
(31) Comparison of 10 MeV electron beam radiation effect on InGaN/GaN and GaN/AlGaN multiple quantum wells, JOURNAL OF LUMINESCENCE, 2019, 第 7 作者
(32) Single-event burnout hardening of planar power MOSFET with partially widened trench source, Single-event burnout hardening of planar power MOSFET with partially widened trench source, 半导体学报英文版, 2018, 第 6 作者
(33) Single-event burnout hardening of planar power MOSFET with partially widened trench source, Single-event burnout hardening of planar power MOSFET with partially widened trench source, JOURNAL OF SEMICONDUCTORS, 2018, 第 6 作者
(34) An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 2 作者
(35) Essential Effects on the Mobility Extraction Reliability for Organic Transistors, ADVANCED FUNCTIONAL MATERIALS, 2018, 通讯作者
(36) Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 5 作者
(37) Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 6 作者
(38) Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 7 作者
(39) 体硅nFinFET总剂量效应三维TCAD仿真研究, Three-dimensional TCAD Simulation Study of the Total Ionizing Dose Effect on Bulk nFinFET, 微电子学与计算机, 2018, 第 5 作者
(40) SOI工艺抗辐照SRAM型FPGA设计与实现, A Radiation Hardened SRAM-based FPGA Implemented in SOI Process, 宇航学报, 2018, 第 4 作者
(41) An Effective Method to Compensate TID Induced Degradation on DSOI Structure, 2017, 第 5 作者
(42) 应用于Buck电路的滑模算法研究, Research on Sliding Mode Algorithm for Buck Converter, 微电子学, 2017, 第 4 作者
(43) Anomalous Total Dose Response and Room-Temperature Annealing Behavior in Bulk nFinFETs, 2017, 第 2 作者
(44) MOS栅氧的界面特性和辐照特性研究, Investigation of Interface Properties and Radiation Properties of Gate Oxide for MOS Capacitors, 微电子学, 2017, 第 6 作者
(45) The total ionizing dose response of a DSOI 4Kb SRAM, MICROELECTRONICS RELIABILITY, 2017, 
(46) Impact of DSOI back-gate biasing on circuit conducted emission, International Workshop on Electromagnetic compatibility of Integrated Circuits, 2017, 第 1 作者
(47) Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices, CHINESE PHYSICS. B, 2016, 第 6 作者
(48) The Current Observer Design for Buck Converter, 2016, 第 3 作者
(49) Effect of cryogenic temperature characteristics on 0.18-mu m silicon-on-insulator devices, CHINESE PHYSICS B, 2016, 第 6 作者
(50) Improved Single-Event Hardness of Trench Power MOSFET with a Widened Split Gate, 2016, 第 6 作者
(51) Improved Single-Event Hardness of Trench Power MOSFET with a Widened Split Gate, 2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2016, 第 6 作者
(52) PDSOI工艺下单粒子瞬态脉冲宽度分析, Analysis of Single-Event Transient pulse width in PDSOI, 太赫兹科学与电子信息学报, 2016, 第 4 作者
(53) The Current Observer Design for Buck Converter, 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, 第 4 作者
(54) Effect of Cryogenic Temperature Characteristic on 0.18μm Silicon-on-insulator Devices, CHINESE PHYSICS B, 2016, 第 5 作者
(55) Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs, CHINESE PHYSICS C, 2015, 第 3 作者
(56) Experimental Investigations into the Effects of Electrical Stress on Electromagnetic Emission from Integrated Circuits, IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 2014, 第 3 作者

科研活动

   
科研项目
( 1 ) 宇航环境下累积损伤对SOI工艺集成电路电磁兼容性的影响, 负责人, 国家任务, 2013-01--2015-12
( 2 ) 一种新型SOI工艺器件和电路, 负责人, 国家任务, 2013-01--2016-12
( 3 ) CSOI器件与电路, 负责人, 国家任务, 2020-01--2023-12
( 4 ) SOI CMOS工艺集成电路电磁敏感度研究, 负责人, 研究所自主部署, 2015-01--2017-12