基本信息
李彬鸿  男  硕导  中国科学院微电子研究所
email: libinhong@ime.ac.cn
address: 北京市朝阳区北土城西路三号
postalCode:

招生信息

   
招生专业
140100-集成电路科学与工程
招生方向
先进工艺FDSOI器件及电路
集成电路电磁兼容研究方向
低功耗物联网芯片设计

教育背景

2008-09--2011-12   法国国立应用科学学院   博士
2005-09--2008-07   法国格勒诺布尔大学   硕士
2001-09--2005-07   复旦大学   本科

工作经历

   
工作简历
2008-09~2011-12,法国国立应用科学学院, 博士
2005-09~2008-07,法国格勒诺布尔大学, 硕士
2001-09~2005-07,复旦大学, 本科

专利与奖励

   
专利成果
( 1 ) 确定热载流子效应最坏偏置点的方法、装置、介质及设备, 2023, 第 5 作者, 专利号: CN115704851A

( 2 ) 一种单结晶体管结构及其制造方法, 2022, 第 3 作者, 专利号: CN114823903A

( 3 ) 基于BSIMSOI的FDSOI MOSFET器件建模方法及装置, 2020, 第 5 作者, 专利号: CN112052636A

( 4 ) 基于BSIMIMG的FDSOI MOSFET模型生成方法及装置, 2020, 第 5 作者, 专利号: CN112052637A

( 5 ) 一种SOI器件结构及其制备方法, 2019, 第 3 作者, 专利号: CN109860098A

( 6 ) 一种SOI器件结构及其制备方法, 2019, 第 3 作者, 专利号: CN109841561A

( 7 ) 一种SOI器件结构及其制备方法, 2019, 第 3 作者, 专利号: CN109801847A

( 8 ) SOI器件及其制作方法, 2019, 第 4 作者, 专利号: CN109742085A

( 9 ) 一种环形振荡器, 2017, 第 2 作者, 专利号: CN206517390U

( 10 ) 一种热阻获取方法, 2016, 第 2 作者, 专利号: CN106093744A

出版信息

   
发表论文
(1) Organic Electrochemical Transistors for Emulating Short-Term Synaptic Plasticity and Direction Selectivity, Ieee Electron Device Letters, 2024, 第 8 作者
(2) Exploring the influence of the contact resistance on perovskite phototransistors, Applied Physics Letters, 2024, 第 12 作者
(3) Modify Power and Performance of 2-Dimensional MoS2 Field Effect Transistor, Research, 2023, 第 11 作者
(4) T-Topology Coupler-Based Bandpass Negative Group Delay Active Circuit Design and Test, IEEE Design &Test, 2022, 第 4 作者
(5) 车规级芯片电磁兼容研究进展, Research Progresses on Electromagnetic Compatibility of Automotive-grade Chips, 安全与电磁兼容, 2022, 第 3 作者
(6) Design and Experimentation of Inductorless Low-Pass NGD Integrated Circuit in 180-nm CMOS Technology, IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 第 3 作者
(7) Back gate impact on SEU characterization of a Double SOI 4k-bit SRAM, MICROELECTRONICS RELIABILITY, 2022, 
(8) Total Ionizing Dose Radiation Effects Hardening Using Back-Gate Bias in Double-SOI Structure, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 第 5 作者
(9) Effects of proton and electron irradiations on the dielectric properties of epoxy/anhydride cured products, MICROELECTRONICS RELIABILITY, 2022, 
(10) Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 
(11) Pseudo-MOSFET transient behavior: Experiments, model, substrate and temperature effect, SOLID-STATE ELECTRONICS, 2021, 
(12) A current model for FOI FinFETs with back-gate bias modulation, SOLID-STATE ELECTRONICS, 2021, 
(13) Examining the Thermal Stress Effect of Electromagnetic Susceptibility of Automotive CAN Controller, JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2021, 第 11 作者
(14) Radiation hardness and abnormal photoresponse dynamics of the CH3NH3PbI3 perovskite photodetector, JOURNAL OF MATERIALS CHEMISTRY C, 2021, 第 10 作者
(15) 体Si和SOI工艺SRAM芯片电磁敏感度的温度效应, Temperature effect on electromagnetic sensitivity of SRAM chips in bulk Si and SOI technologies, 电波科学学报, 2021, 第 4 作者
(16) Analytical Design of Dual-Band Negative Group Delay Circuit With Multi-Coupled Lines, IEEE ACCESS, 2020, 第 2 作者
(17) S-Matrix and Bandpass Negative Group Delay Innovative Theory of Ti-Geometrical Shape Microstrip Structure, IEEE ACCESS, 2020, 第 11 作者
(18) Study on Degradation Mechanisms of Thermal Conductivity for Confined Nanochannel in Gate-All-Around Silicon Nanowire Field-Effect Transistors, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 第 4 作者
(19) Single-event induced failure mode of PWM in DC/DC converter, MICROELECTRONICS RELIABILITY, 2020, 
(20) Mechanism Analysis of Proton Irradiation-Induced Increase of 3-dB Bandwidth of GaN-Based Microlight-Emitting Diodes for Space Light Communication, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 第 15 作者
(21) Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature, MICROELECTRONICS RELIABILITY, 2020, 第 4 作者
(22) 传导电磁干扰对绝缘衬底上硅工艺器件的影响研究, Study on the Influence of Conducted Electromagnetic Interference on Devices of Silicon on Insulated Process, 固体电子学研究与进展, 2020, 第 5 作者
(23) 考虑背栅偏置的FOI FinFET电流模型, Current Model of FOI FinFETs with Back-Gate Bias, 半导体技术, 2020, 第 4 作者
(24) A comparison study on electromagnetic susceptibility of current reference circuits with scaling-down technologies and schemes, MICROELECTRONICS RELIABILITY, 2020, 第 2 作者
(25) 基于谐波探测理论功率放大器线性化仿真研究, Application of Harmonic Probing Theory in the Linearization of Power Amplifier, 计算机仿真, 2020, 第 4 作者
(26) Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 第 12 作者
(27) TCAD Simulation of Total Ionizing Dose Response on DSOI nMOSFET, 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2019, 第 11 作者
(28) Immunity evaluation of SRAM chips for SOI and SI technology, 2019 12TH INTERNATIONAL WORKSHOP ON THE ELECTROMAGNETIC COMPATIBILITY OF INTEGRATED CIRCUITS (EMC COMPO 2019), 2019, 第 5 作者
(29) Time-Domain Experimentation of NGD ActiveRC-Network Cell, IEEETRANSACTIONSONCIRCUITSANDSYSTEMSIIEXPRESSBRIEFS, 2019, 第 5 作者
(30) X射线和重离子辐射对GaN基发光二极管的影响, Influence of X-Ray and Heavy Ion Radiation on Properties of GaN-Based LEDs, 微处理机, 2019, 第 4 作者
(31) Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms, MATERIALS, 2019, 第 4 作者
(32) Proton and light ions induced SEU effect in a SOI SRAM with gold plated lid, MICROELECTRONICS RELIABILITY, 2019, 
(33) 基于参数选择的数字预失真处理, Digital Predistortion Based on Parameter Selection, 电讯技术, 2019, 第 4 作者
(34) A comprehensive study of a bidirectional ESD protection device under harsh environment, 2019 12TH INTERNATIONAL WORKSHOP ON THE ELECTROMAGNETIC COMPATIBILITY OF INTEGRATED CIRCUITS (EMC COMPO 2019), 2019, 第 7 作者
(35) 一种基于数字信号控制的CMOS神经元电路, A Digital-Controlled Silicon Neuron Circuit, 微电子学与计算机, 2019, 第 2 作者
(36) An SET Generation Circuit with Tunable Pulse Width, 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019, 第 4 作者
(37) 基于MOS技术的神经元电路研究进展, Research Status of Neuron Circuit Based on MOS Technology, 微电子学, 2019, 第 2 作者
(38) Comparison of the Total Dose Responses of Fully Depleted SOI nMOSFETs With Different Geometries for the Worst Case Bias Conditions, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 第 5 作者
(39) Negative Group Delay Theory of a Four-Port RC-Network Feedback Operational Amplifier, IEEE ACCESS, 2019, 第 11 作者
(40) Comparison of 10���MeV electron beam radiation effect on InGaN/GaN and GaN/AlGaN multiple quantum wells, JOURNAL OF LUMINESCENCE, 2019, 第 7 作者
(41) Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 5 作者
(42) Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 6 作者
(43) 体硅nFinFET总剂量效应三维TCAD仿真研究, Three-dimensional TCAD Simulation Study of the Total Ionizing Dose Effect on Bulk nFinFET, 微电子学与计算机, 2018, 第 5 作者
(44) Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 7 作者
(45) SOI工艺抗辐照SRAM型FPGA设计与实现, A Radiation Hardened SRAM-based FPGA Implemented in SOI Process, 宇航学报, 2018, 第 4 作者
(46) Single-event burnout hardening of planar power MOSFET with partially widened trench source, Single-event burnout hardening of planar power MOSFET with partially widened trench source, 半导体学报英文版, 2018, 第 6 作者
(47) An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 2 作者
(48) Single-event burnout hardening of planar power MOSFET with partially widened trench source, Single-event burnout hardening of planar power MOSFET with partially widened trench source, JOURNAL OF SEMICONDUCTORS, 2018, 第 6 作者
(49) Essential Effects on the Mobility Extraction Reliability for Organic Transistors, ADVANCED FUNCTIONAL MATERIALS, 2018, 第 11 作者
(50) An Effective Method to Compensate TID Induced Degradation on DSOI Structure, 2017, 第 5 作者
(51) 应用于Buck电路的滑模算法研究, Research on Sliding Mode Algorithm for Buck Converter, 微电子学, 2017, 第 4 作者
(52) Anomalous Total Dose Response and Room-Temperature Annealing Behavior in Bulk nFinFETs, 2017, 第 2 作者
(53) The total ionizing dose response of a DSOI 4Kb SRAM, MICROELECTRONICS RELIABILITY, 2017, 
(54) MOS栅氧的界面特性和辐照特性研究, Investigation of Interface Properties and Radiation Properties of Gate Oxide for MOS Capacitors, 微电子学, 2017, 第 6 作者
(55) Impact of DSOI back-gate biasing on circuit conducted emission, International Workshop on Electromagnetic compatibility of Integrated Circuits, 2017, 第 1 作者
(56) Effect of cryogenic temperature characteristics on 0.18-��m silicon-on-insulator devices, CHINESE PHYSICS. B, 2016, 第 6 作者
(57) The Current Observer Design for Buck Converter, 2016, 第 3 作者
(58) Effect of cryogenic temperature characteristics on 0.18-mu m silicon-on-insulator devices, CHINESE PHYSICS B, 2016, 第 6 作者
(59) Improved Single-Event Hardness of Trench Power MOSFET with a Widened Split Gate, 2016, 第 6 作者
(60) Improved Single-Event Hardness of Trench Power MOSFET with a Widened Split Gate, 2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2016, 第 6 作者
(61) PDSOI工艺下单粒子瞬态脉冲宽度分析, Analysis of Single-Event Transient pulse width in PDSOI, 太赫兹科学与电子信息学报, 2016, 第 4 作者
(62) The Current Observer Design for Buck Converter, 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, 第 4 作者
(63) Effect of Cryogenic Temperature Characteristic on 0.18��m Silicon-on-insulator Devices, CHINESE PHYSICS B, 2016, 第 5 作者
(64) Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs, CHINESE PHYSICS C, 2015, 第 3 作者
(65) Experimental Investigations into the Effects of Electrical Stress on Electromagnetic Emission from Integrated Circuits, IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 2014, 第 3 作者

科研活动

   
科研项目
( 1 ) FDSOI-Nanosheet器件技术开发, 参与, 其他, 2024-05--2024-05
( 2 ) 可重复运载火箭设备健康管理微系统集成, 参与, 国家任务, 2023-01--2027-12
( 3 ) 面向5G通信系统GaN功率器件电磁干扰关键技术研究, 参与, 国家任务, 2023-01--2024-12
( 4 ) CSOI器件与电路, 负责人, 国家任务, 2020-01--2023-12
( 5 ) SOI CMOS工艺集成电路电磁敏感度研究, 负责人, 研究所自主部署, 2015-01--2017-12
( 6 ) 宇航环境下累积损伤对SOI工艺集成电路电磁兼容性的影响, 负责人, 国家任务, 2013-01--2015-12
( 7 ) 一种新型SOI工艺器件和电路, 负责人, 国家任务, 2013-01--2016-12