Hafnium-based ferroelectric memory

FeRAM

FeFET

2019-09-2023-07 / Institute of Microelectronics, Chinese Academy of Sciences / PhD

2016-09-2019-07 / Institute of Microelectronics, Chinese Academy of Sciences / Master

2011-09-2015-07 / Sichuan University / Bachelor

   

2025-12~2026-05, Institute of Microelectronics, Chinese Academy of Sciences, Associate Researcher

2023-07~2025-12, Institute of Microelectronics, Chinese Academy of Sciences, Postdoctoral Researcher

   

（1） Top-ZrO2 Interface–Engineered ZrO2/HZO Ferroelectric Superlattices with Highly Stable Polarization Switching over 1011 Cycles, IEEE Electron Device Letters, 2026, 第 9 作者

（2） Influence of Sc, Y, and B dopants on structural distortions and polarization switching in AlN-based ferroelectrics, Journal of Applied Physics, 2025, 第 5 作者

（3） Fatigue of ferroelectric field effect transistor: mechanisms and optimization strategies, Journal of Semiconductors, 2025, 第 8 作者

（4） Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer, Advanced Electronic Materials, 2025, 第 9 作者

（5） Region-Selective Oxygen Vacancy Engineering for Ferroelectric Hf0.5Zr0.5O2 Thin Films Processed at 300 °C, ACS Applied Materials & Interfaces, 2025, 第 6 作者

（6） Enhancement of energy storage and efficiency in antiferroelectric HfxZr1-xO2 supercapacitors through tailored phase engineering by oxygen vacancy, IEEE Electron Device Letters, 2025, 

（7） A Systematic Study of Charge-Trapping Phenomenon in FeFET on FDSOI via Low-Frequency Noise Spectroscopy, IEEE Electron Device Letters, 2024, 第 3 作者

（8） Spatial and energetic mapping of traps in FeFET during endurance process by advanced trap characterization platform, IEEE Electron Device Letters, 2024, 第 4 作者

（9） Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation, Applied Physics Letters, 2024, 第 5 作者

（10） Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET With IGZO Channel Utilizing Postdeposition Annealing, IEEE Electron Device Letters, 2024, 第 6 作者

（11） Endurance Improvement of HfO2 -Based FeFETs on FDSOI Platform by Al2O3 Insertion Layer and Leakage-Awareness Recover (LAR) Strategies, IEEE Electron Device Letters, 2024, 第 1 作者

（12） In-depth understanding of nitridation-induced endurance enhancement in FeFETs: Defect properties and dynamics characterized by nonradiative multi-phonon model, IEEE Transactions on Electron Devices, 2024, 第 4 作者

（13） A Hf0. 5Zr0. 5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory, Science China. Information Sciences, 2023, 第 2 作者

（14） A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field, Science, 2023, 第 1 作者

（15） Precrystallization Engineering of Hf0.5Zr0.5O2 Film in Back-End-of-Line Compatible Ferroelectric Device for Enhanced Remnant Polarization and Endurance, IEEE Electron Device Letters, 2023, 第 1 作者

（16） HfO2-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications, IEEE Electron Device Letters, 2023, 第 1 作者

（17） Stress Effects of Interconnecting Metals on Back-End-of-Line Compatible Hf0.5Zr0.5O2 Ferroelectric Capacitors, IEEE Electron Device Letters, 2023, 第 5 作者

（18） Thermal Induced Pr Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism, IEEE Electron Device Letters, 2023, 第 3 作者

（19） Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks, Science China Information Sciences, 2023, 第 6 作者

（20） Achieving High-Endurance Ferroelectricity in Hf0.5Zr0.5O2 Thin Films on Ge Substrate Through ZrO2 Interfacial Layer Induced Low-Temperature Annealing, IEEE Electron Device Letters, 2023, 第 5 作者

（21） Improved Endurance of Ferroelectric Hf0.5Zr0.5O2 Using Laminated-Structure Interlayer, Nanomaterials, 2023, 第 7 作者

（22） Performance Optimization for Ferroelectric HfZrOx on a Ge Substrate by Modifying the Deposition Temperature, IEEE Transactions on Nanotechnology, 2023, 第 8 作者

（23） Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes, Science China Information Sciences, 2023, 第 4 作者

（24） Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics, Nano Research, 2022, 第 9 作者

（25） Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility, Nano Research, 2022, 第 5 作者

（26） Enhanced Remnant Polarization (30 μC/cm2) and Retention of Ferroelectric Hf0.5Zr0.5O2 by NH3 Plasma Treatment, IEEE Electron Device Letters, 2022, 第 5 作者

（27） Improved Endurance of Hf₀.₅Zr₀.₅O2-Based Ferroelectric Capacitor Through Optimizing the Ti–N Ratio in TiN Electrode, IEEE Electron Device Letters, 2022, 第 9 作者

（28） Forming-Free NbOx-Based Memristor Enabling Low-Energy-Consumption Artificial Spiking Afferent Nerves, EEE Transactions on Electron Devices, 2022, 第 6 作者

（29） Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period, Advanced Electronic Materials, 2022, 第 4 作者

（30） Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory, Advanced Electronic Materials, 2022, 第 9 作者

（31） Wake‐Up Effect in HfO2‐Based Ferroelectric Films, Advanced Electronic Materials, 2021, 第 6 作者

（32） Robust Breakdown Reliability and Improved Endurance in Hf0.5Zr0.5O2 Ferroelectric Using Grain Boundary Interruption, IEEE Transactions on Electron Devices, 2021, 第 11 作者

（33） Observation and characterization of recoverable fatigue process under low-electric field (< 1.8 MV/cm) in HfZrO ferroelectric film, IEEE Electron Device Letters, 2021, 第 8 作者

（34） Investigation of endurance behavior on HfZrO-based charge-trapping FinFET devices by random telegraph noise and subthreshold swing techniques, IEEE Transactions on Electron Devices, 2021, 第 7 作者