铪基铁电存储技术、FeRAM 、FeFET

140100 —集成电路科学与工程

085403—集成电路工程

2019-09--2023-07   中国科学院微电子研究所   博士研究生
2016-09--2019-07   中国科学院微电子研究所   硕士研究生
2011-09--2015-07   四川大学   本科

2025-12~至今,中国科学院微电子研究所, 副研究员

2023-07~2025-12,中国科学院微电子研究所, 博士后

（1） 中国科学院优秀博士毕业论文

（2） 中国半导体十大研究进展提名奖

   

（1） Top-ZrO2 Interface–Engineered ZrO2/HZO Ferroelectric Superlattices with Highly Stable Polarization Switching over 1011 Cycles, IEEE Electron Device Letters, 2026, 
（2） Influence of Sc, Y, and B dopants on structural distortions and polarization switching in AlN-based ferroelectrics, Journal of Applied Physics, 2025, 
（3） Fatigue of ferroelectric field effect transistor: mechanisms and optimization strategies, Journal of Semiconductors, 2025, 
（4） Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer, Advanced Electronic Materials, 2025, 
（5） Region-Selective Oxygen Vacancy Engineering for Ferroelectric Hf0.5Zr0.5O2 Thin Films Processed at 300 °C, ACS Applied Materials & Interfaces, 2025, 
（6） Enhancement of energy storage and efficiency in antiferroelectric HfxZr1-xO2 supercapacitors through tailored phase engineering by oxygen vacancy, IEEE Electron Device Letters, 2025, 第 14 作者  通讯作者
（7） A Systematic Study of Charge-Trapping Phenomenon in FeFET on FDSOI via Low-Frequency Noise Spectroscopy, IEEE Electron Device Letters, 2024, 
（8） Spatial and energetic mapping of traps in FeFET during endurance process by advanced trap characterization platform, IEEE Electron Device Letters, 2024, 
（9） Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation, Applied Physics Letters, 2024, 
（10） Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET With IGZO Channel Utilizing Postdeposition Annealing, IEEE Electron Device Letters, 2024, 
（11） Endurance Improvement of HfO2 -Based FeFETs on FDSOI Platform by Al2O3 Insertion Layer and Leakage-Awareness Recover (LAR) Strategies, IEEE Transactions on Electron Devices, 2024, 第 1 作者
（12） In-depth understanding of nitridation-induced endurance enhancement in FeFETs: Defect properties and dynamics characterized by nonradiative multi-phonon model, IEEE Transactions on Electron Devices, 2024, 
（13） A Hf0. 5Zr0. 5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory, Science China. Information Sciences, 2023, 第 2 作者
（14） A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field, Science, 2023, 第 1 作者
（15） Precrystallization Engineering of Hf0.5Zr0.5O2 Film in Back-End-of-Line Compatible Ferroelectric Device for Enhanced Remnant Polarization and Endurance, IEEE Electron Device Letters, 2023, 第 1 作者
（16） HfO2-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications, IEEE Electron Device Letters, 2023, 第 1 作者
（17） Stress Effects of Interconnecting Metals on Back-End-of-Line Compatible Hf0.5Zr0.5O2 Ferroelectric Capacitors, IEEE Electron Device Letters, 2023, 
（18） Thermal Induced Pr Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism, IEEE Electron Device Letters, 2023, 
（19） Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks, Science China Information Sciences, 2023, 
（20） Achieving High-Endurance Ferroelectricity in Hf0.5Zr0.5O2 Thin Films on Ge Substrate Through ZrO2 Interfacial Layer Induced Low-Temperature Annealing, IEEE Electron Device Letters, 2023, 
（21） Improved Endurance of Ferroelectric Hf0.5Zr0.5O2 Using Laminated-Structure Interlayer, Nanomaterials, 2023, 
（22） Performance Optimization for Ferroelectric HfZrOx on a Ge Substrate by Modifying the Deposition Temperature, IEEE Transactions on Nanotechnology, 2023, 
（23） Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes, Science China Information Sciences, 2023, 
（24） Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics, Nano Research, 2022, 
（25） Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility, Nano Research, 2022, 
（26） Enhanced Remnant Polarization (30 μC/cm2) and Retention of Ferroelectric Hf0.5Zr0.5O2 by NH3 Plasma Treatment, IEEE Electron Device Letters, 2022, 
（27） Improved Endurance of Hf₀.₅Zr₀.₅O2-Based Ferroelectric Capacitor Through Optimizing the Ti–N Ratio in TiN Electrode, IEEE Electron Device Letters, 2022, 
（28） Forming-Free NbOx-Based Memristor Enabling Low-Energy-Consumption Artificial Spiking Afferent Nerves, EEE Transactions on Electron Devices, 2022, 
（29） Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period, Advanced Electronic Materials, 2022, 
（30） Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory, Advanced Electronic Materials, 2022, 
（31） Wake‐Up Effect in HfO2‐Based Ferroelectric Films, Advanced Electronic Materials, 2021, 
（32） Robust Breakdown Reliability and Improved Endurance in Hf0.5Zr0.5O2 Ferroelectric Using Grain Boundary Interruption, IEEE Transactions on Electron Devices, 2021, 
（33） Observation and characterization of recoverable fatigue process under low-electric field (< 1.8 MV/cm) in HfZrO ferroelectric film, IEEE Electron Device Letters, 2021, 
（34） Investigation of endurance behavior on HfZrO-based charge-trapping FinFET devices by random telegraph noise and subthreshold swing techniques, IEEE Transactions on Electron Devices, 2021,