基本信息
薛春来 男 博导 中国科学院半导体研究所
email: clxue@semi.ac.cn
address: 北京市912信箱
postalCode: 100083
email: clxue@semi.ac.cn
address: 北京市912信箱
postalCode: 100083
招生信息
招生专业
080903-微电子学与固体电子学080901-物理电子学
招生方向
硅基光电子材料与器件硅基光子集成新型硅基红外探测器件
教育背景
2002-09--2007-07 中国科学院研究生院 博士1998-09--2002-07 吉林大学 学士
工作经历
工作简历
2015-01~现在, 中国科学院半导体研究所, 研究员2012-02~2015-01,中国科学院半导体研究所, 副研究员2007-09~2012-02,中国科学院半导体研究所, 助理研究员2002-09~2007-07,中国科学院研究生院, 博士1998-09~2002-07,吉林大学, 学士
教授课程
硅基光电子学材料与器件
出版信息
发表论文
(1) Study of strain evolution mechanism in Ge1_xSnx materials grown by low temperature molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2022, 第 6 作者(2) Si-Based Ge 320 x 256 Focal Plane Array for Short-Wave Infrared Imaging, IEEE PHOTONICS TECHNOLOGY LETTERS, 2022, 第 7 作者(3) 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application, PHOTONICS RESEARCH, 2021, 第 6 作者(4) Spontaneous ferromagnetism and magnetoresistance hysteresis in Ge1–xSnx alloys, SCIENCE BULLETIN, 2021, 通讯作者(5) Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 第 8 作者(6) Germanium lead alloy on insulator grown by rapid melting growth, JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 第 10 作者(7) Negative Magnetoresistance in the GeSn Strip, ACS APPLIED MATERIALS & INTERFACES, 2021, 通讯作者(8) 新型硅基IV族合金材料生长及光电器件研究进展(特邀), Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited), 光子学报, 2021, 第 6 作者(9) Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction, SMALL METHODS, 2021, 通讯作者(10) Epitaxial growth and characterization of Ge1-x-ySnxPby ternary alloys, JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 第 9 作者(11) Development of microfluidic platform capable of high-throughput absolute quantification of single-cell multiple intracellular proteins from tumor cell lines and patient tumor samples, BIOSENSORS & BIOELECTRONICS, 2020, 第 8 作者(12) Investigation of lead surface segregation during germanium–lead epitaxial growth, JOURNAL OF MATERIALS SCIENCE, 2020, 第 9 作者(13) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs, JOURNAL OF LUMINESCENCE, 2020, 第 7 作者(14) Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn, SCIENTIFIC REPORTS, 2020, 通讯作者(15) High-power back-to-back dual-absorption germanium photodetector, OPTICS LETTERS, 2020, 第 7 作者(16) High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling, IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 第 8 作者(17) 56 Gbps high-speed Ge electro-absorption modulator, 56 Gbps high-speed Ge electro-absorption modulator, PHOTONICS RESEARCH, 2020, 第 5 作者(18) High-Performance Germanium Waveguide Photodetectors on Silicon, High-Performance Germanium Waveguide Photodetectors on Silicon*, CHINESE PHYSICS LETTERS, 2020, 第 9 作者(19) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs, JOURNAL OF LUMINESCENCE, 2020, 第 7 作者(20) High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, 中国物理B:英文版, 2019, 第11作者(21) Study of GePb photodetectors for shortwave infrared detection, OPTICS EXPRESS, 2019, 第 6 作者(22) Germanium, LIGHT, SCIENCE & APPLICATIONS, 2019, 第 7 作者(23) Highly Enhanced SWIR Image Sensors Based on Ge1-xSnx-Graphene Heterostructure Photodetector, ACS PHOTONICS, 2019, 通讯作者(24) Core-Shell-Structured SiOx-C Composite for Lithium-Ion Battery Anodes, ENERGY TECHNOLOGY, 2019, 第 7 作者(25) 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 光子学研究:英文版, 2019, 第 6 作者(26) 25 x 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, PHOTONICS RESEARCH, 2019, 第 6 作者(27) Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band., LIGHT-SCIENCE & APPLICATIONS, 2019, 通讯作者(28) High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, CHINESE PHYSICS B, 2019, 通讯作者(29) High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application, CHINESE PHYSICS B, 2019, 第 7 作者(30) Plasma Treatment for Nitrogen-Doped 3D Graphene Framework by a Conductive Matrix with Sulfur for High-Performance Li-S Batteries, SMALL, 2019, 通讯作者(31) Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 第 6 作者(32) 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 光子学研究:英文版, 2019, 第 6 作者(33) Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals, JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 第 9 作者(34) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 3 作者(35) Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source, SMALL, 2018, 通讯作者(36) Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect, JOURNAL OF APPLIED PHYSICS, 2018, 第 6 作者(37) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, JOURNAL OF SEMICONDUCTORS, 2018, 第 4 作者(38) Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy, JOURNAL OF CRYSTAL GROWTH, 2018, 第 6 作者(39) MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-Energy-Density Asymmetric Supercapacitors, ENERGY TECHNOLOGY, 2018, 第 6 作者(40) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 3 作者(41) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, 半导体学报:英文版, 2018, 第 4 作者(42) Fabrication o Con ac Low-Resistance Ni Ohmic Contacts on n(+)-Ge1-xSnx, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 第 6 作者(43) Infrared tubular microcavity based on rolled-up GeSn/Ge nanomembranes, NANOTECHNOLOGY, 2018, 第 8 作者(44) Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx, IEEE Transactions On Electron Devices, 2018, (45) Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 第 8 作者(46) Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 4 作者(47) Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy, LETTER, 2017, 第 6 作者(48) Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy, OPTICS LETTERS, 2017, 第 6 作者(49) Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 3 作者(50) Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys, PHYS. CHEM. CHEM. PHYS., 2017, 第 4 作者(51) Numerical calculation of strain-N+-Ge1%xSnx/P+-δGe1%xSnx/N%-Ge1%y%zSiySnz/P+-Ge1%y%zSiySnz heterojunction tunnel field-effect transistor, Japanese Journal of Applied Physics, 2017, (52) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, JOURNAL OF SEMICONDUCTORS, 2017, 第 7 作者(53) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, 半导体学报(英文版), 2017, 第 7 作者(54) Facile and Efficient Synthesis of a Microsized SiOx/C Core−Shell Composite as Anode Material for Lithium Ion Batteries, ENERGY & FUELS, 2017, 第 7 作者(55) High-performance ball-milled SiOx anodes for lithium ion batteries, JOURNAL OF POWER SOURCES, 2017, 第 6 作者(56) Influence of H-2 on strain evolution of high-Sn-content Ge1-x Sn (x) alloys, JOURNAL OF MATERIALS SCIENCE, 2017, 第 4 作者(57) Numerical calculation of strain-N+-Ge1-xSnx/P+-delta Ge1-xSnx/N-Ge1-y-zSiySnz/P+-Ge1-y-zSiySnz heterojunction tunnel field-effect transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 第 3 作者(58) 48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2017, 第 7 作者(59) Defect-free high Sn-content GeSn on insulator grown by rapid melting growth, SCIENTIFIC REPORTS, 2016, 第 6 作者(60) 可集成的硅基光互连技术研究, 2013 Annual Report on Investigation of Integratable Si-based Optical Interconnect Technology, 科技创新导报, 2016, 第 4 作者(61) GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, APPLIED PHYSICS LETTERS, 2016, 第 5 作者(62) High-performance lithium-ion battery with nano-porous polycrystalline silicon particles as anode, ELECTROCHIMICA ACTA, 2016, 第 6 作者(63) SiGe/Si单光子雪崩光电二极管仿真, Simulation of SiGe/Si single photon avalanche photodiode, 红外与激光工程, 2016, 第 4 作者(64) Research progress of Si-based germanium materials and devices, JOURNAL OF SEMICONDUCTORS, 2016, 第 4 作者(65) High-speed waveguide-integrated Ge/Si avalanche photodetector, CHINESE PHYSICS B, 2016, 通讯作者(66) “硅器时代”的信息社会, 科学, 2016, 第 1 作者(67) Temperature dependent direct-bandgap light emission and optical gain of Ge, CHINESE PHYSICS B, 2016, 第 5 作者(68) Cu2+1O coated polycrystalline Si nanoparticles as anode for lithium-ion battery, NANOSCALE RESEARCH LETTERS, 2016, 第 7 作者(69) Silicon based GeSn p-i-n photodetector for SWIR detection, IEEE PHOTONICS JOURNAL, 2016, 通讯作者(70) High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate, SCIENTIFIC REPORTS, 2016, 第 2 作者(71) Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 第 5 作者(72) Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA1U approach, JOURNAL OF APPLIED PHYSICS, 2015, 第 3 作者(73) Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy, JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 第 8 作者(74) Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation, AIP ADVANCES, 2015, 第 3 作者(75) High hole mobility GeSn on insulator formed by self-organized seeding lateral growth, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 第 5 作者(76) Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser, CHINESE PHYSICS B, 2015, 第 3 作者(77) Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth, THIN SOLID FILMS, 2015, 第 4 作者(78) High-Columbic-Efficiency Lithium Battery Based on Silicon Particle Materials, NANOSCALE RESEARCH LETTERS, 2015, 第 6 作者(79) Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07, IEEE ELECTRON DEVICE LETTERS, 2015, 第 5 作者(80) Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 第 4 作者(81) Comparative studies of band structures for biaxial (100)-, (110)-, and (111)strained GeSn: A first-principles calculation with GGA plus U approach, JOURNAL OF APPLIED PHYSICS, 2015, 第 3 作者(82) Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn, SOLID-STATE ELECTRONICS, 2015, 第 6 作者(83) Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth, THIN SOLID FILMS, 2015, (84) Theoretical study on optical gain characteristics of Ge_(1-x)Sn_x alloy for short-wave infrared laser, CHINESE PHYSICS. B, 2015, 第 3 作者(85) High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector, INFRARED SENSORS, DEVICES, AND APPLICATIONS V, 2015, 第 2 作者(86) Influence of growth and annealing temperature on the strain and surface morphology of Ge995Sn0.005 epilayer, APPLIED SURFACE SCIENCE, 2015, 第 3 作者(87) High performance silicon waveguide germanium photodetector, CHINESE PHYSICS B, 2015, 第 2 作者(88) Zero-bias high-responsivity high-bandwidth top-illuminated germanium p-i-n photodetectors, CHINESE PHYSICS B, 2014, 通讯作者(89) Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature, CHINESE PHYSICS B, 2014, 第 5 作者(90) Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration, PHYSICA B-CONDENSED MATTER, 2014, 第 3 作者(91) Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance, NANOSCALE RESEARCH LETTERS, 2014, 第 8 作者(92) Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate, APPLIED PHYSICS LETTERS, 2014, 第 5 作者(93) Si基IV族光电器件的研究进展(一)—激光器, Progress in Study of Si-Based Group IV Optoelectronic Devices(Ⅰ)——Lasers, 激光与光电子学进展, 2014, 第 5 作者(94) Crystal Quality Improvement of GeSn Alloys by Thermal Annealing, ECS SOLID STATE LETTERS, 2014, 第 6 作者(95) Compact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides, OPTICS EXPRESS, 2014, 第 5 作者(96) Hedgehog-like polycrystalline Si as anode material for high performance Li-ion battery, RSC ADVANCES, 2014, 第 5 作者(97) Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects, CHINESE PHYSICS B, 2014, 通讯作者(98) 硅基IV族光电器件研究进展(二)——光电探测器, Progress in the Study of Si-Based Group IV Optoelectronic Devices(Ⅱ)——Photodetectors, 激光与光电子学进展, 2014, 第 3 作者(99) Ag-assisted lateral etching of Si nanowires and its application to nanowire transfer, APPLIED PHYSICS LETTERS, 2013, 第 4 作者(100) Growth of Ge1−xSnx/Ge strained-layer superlattices on Si(1 0 0) by molecular beam epitaxy, SUPERLATTICES AND MICROSTRUCTURES, 2013, 第 4 作者(101) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 3 作者(102) High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者(103) High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 第 2 作者(104) Ge-Si quantum dots thin film solar cells, APPLIED PHYSICS LETTERS, 2013, 第 7 作者(105) 1×16 Ge-on-SOI PIN Photo-detector Array for Parallel Optical Interconnects, Chin. Phys. B, 2013, 通讯作者(106) Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 第 9 作者(107) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 3 作者(108) Enhanced photoluminescence from porous silicon nanowire arrays, NANOSCALE RESEARCH LETTERS, 2013, 第 5 作者(109) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 3 作者(110) Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer, Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer, CHINESE PHYSICS LETTERS, 2013, 第 5 作者(111) Si基Ge异质结构发光器件的研究进展, Progress in Ge/Si heterostructures for light emitters, 中国光学, 2013, 第 3 作者(112) Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth, JOURNAL OF APPLIED PHYSICS, 2013, 第 5 作者(113) High-responsivity GeSn short-wave infrared p-i-n photodetectors, APPLIED PHYSICS LETTERS, 2013, 通讯作者(114) Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation, IEEE ELECTRON DEVICE LETTERS, 2013, 第 10 作者(115) High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector, CHINESE PHYSICS B, 2013, 通讯作者(116) Impact of ammonia on the electrical properties of p-type Si nanowire arrays, JOURNAL OF APPLIED PHYSICS, 2013, 第 5 作者(117) Texture Evolution and Grain Competition in NiGe Film on Ge(001), APPLIED PHYSICS EXPRESS, 2013, 第 7 作者(118) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 3 作者(119) Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate, CHINESE PHYSICS B, 2013, 第 5 作者(120) High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者(121) Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation, SOLID-STATE ELECTRONICS, 2013, 第 8 作者(122) Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon, Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon, 中国物理英文版, 2012, 第 3 作者(123) Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping, OPTICS EXPRESS, 2012, 第 6 作者(124) Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs, ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 其他(合作组作者)(125) Lattice constant deviation from Vegard, ACTA PHYSICA SINICA, 2012, (126) Enhanced Current Transportation in Silicon-riched Nitride (SRN)/Silicon-riched Oxide (SRO) Multilayer Nanostructure, NANO-MICRO LETTERS, 2012, 第 4 作者(127) High Hole Mobility in Strained Germanium-Tin (GeSn) Channel pMOSFET Fabricated on (111) Substrate, SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 第 10 作者(128) Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells, APPLIED PHYSICS LETTERS, 2012, 第 5 作者(129) High-speed and high-power uni-traveling-carrier photodetector, ACTA PHYSICA SINICA, 2012, 第 4 作者(130) Ge-on-Si for Si-based integrated materials and photonic devices, FRONTIERS OF OPTOELECTRONICS, 2012, 第 3 作者(131) Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer, DIGEST OF TECHNICAL PAPERS - SYMPOSIUM ON VLSI TECHNOLOGY, 2012, 第 5 作者(132) Towards Direct Band-to-Band Tunneling in P-Channel Tunneling Field Effect Transistor (TFET): Technology Enablement by Germanium-Tin (GeSn), 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2012, 第 9 作者(133) Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal, IEEE ELECTRON DEVICE LETTERS, 2012, 第 10 作者(134) Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor, INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS, 2012, 其他(合作组作者)(135) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, CHINESE PHYSICS B, 2012, 第 4 作者(136) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, CHINESE PHYSICS B, 2012, 第 4 作者(137) Formation of rippled surface morphology during si/si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, CHINESE PHYSICS B, 2011, 第 3 作者(138) Detailed balance limit efficiency of silicon intermediate band solar cells, CHINESE PHYSICS B, 2011, 第 3 作者(139) InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, 中国物理:英文版, 2011, 第 6 作者(140) Uneven splitting-ratio 1x2 multimode interference splitters based on silicon wire waveguides, CHINESE OPTICS LETTERS, 2011, 第 7 作者(141) Detailed balance limit efficiency of silicon intermediate band solar cells, Detailed balance limit efficiency of silicon intermediate band solar cells, 中国物理:英文版, 2011, 第 3 作者(142) Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 6 作者(143) Uneven splitting-ratio 1×2 multimode interference splitters based on silicon wire waveguides, CHINESE OPTICS LETTERS, 2011, 第 7 作者(144) Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As, IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS GFP, 2011, 第 3 作者(145) Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology, IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 第 4 作者(146) UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation, IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS GFP, 2011, 第 3 作者(147) Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, 中国物理:英文版, 2011, 第 3 作者(148) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, CHINESE PHYSICS B, 2011, 第 5 作者(149) The contributions of composition and strain to the phonon shift in ge1-xsnx alloys, SOLID STATE COMMUNICATIONS, 2011, 第 6 作者(150) Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, CHINESE PHYSICS LETTERS, 2011, 第 3 作者(151) Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜, Epitaxial growth of Ge_(0.975)Sn_(0.025) alloy films on Si(001) substrates by molecular beam epitaxy, 物理学报, 2011, 第 6 作者(152) Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing, APPLIED SURFACE SCIENCE, 2011, 第 5 作者(153) Inp-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, CHINESE PHYSICS B, 2011, 第 6 作者(154) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, 中国物理:英文版, 2011, 第 5 作者(155) Gesn p-i-n photodetector for all telecommunication bands detection, OPTICS EXPRESS, 2011, 第 3 作者(156) Uneven splitting-ratio lx2 multimode interference splitters based on silicon wire waveguides, Uneven splitting-ratio lx2 multimode interference splitters based on silicon wire waveguides, 中国光学快报:英文版, 2011, 第 7 作者(157) Highly efficient 1.53 mu m luminescence in erxyb2-xsi2o7 thin films grown on si substrate, MATERIALS LETTERS, 2011, 第 6 作者(158) Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material, CHINESE PHYSICS B, 2011, 第 5 作者(159) 杂质带太阳能电池研究, Research on Impurity Band Photovoltaic Solar Cells, 中国集成电路, 2010, 第 2 作者(160) 外延生长Gel-xSnx合金的研究进展, 材料导报, 2010, 第 5 作者(161) 硅基室温电流注入Ge/Si异质结发光二极管, 激光与光电子学进展, 2010, 第 3 作者(162) 外延生长Ge1-xSnx合金的研究进展, Progress in the Epitaxy Growth of Ge1-xSnx Alloy, 材料导报, 2010, 第 5 作者(163) Fabrication of silicon-based template-assisted nanoelectrode arrays and ohmic contact properties investigation, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 第 4 作者(164) Zero biased Ge-on-Si a bandwidth of 4.72 photodetector with GHz at 1550 nm, Zero biased Ge-on-Si a bandwidth of 4.72 photodetector with GHz at 1550 nm, 中国物理:英文版, 2009, 第 2 作者(165) 1 x 4 ge-on-soi pin photodetector array for parallel optical interconnects, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2009, 通讯作者(166) Si衬底上Ge材料的UHVCVD生长, Growth of Ge on Silicon by Ultrahigh Vacuum Chemical Vapor Deposition, 材料科学与工程学报, 2009, 第 2 作者(167) Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm, CHINESE PHYSICS B, 2009, 第 2 作者(168) Electroluminescence from Ge on Si substrate at room temperature, APPLIED PHYSICS LETTERS, 2009, 第 3 作者(169) DCXRD分析Ge/Si(001)多层纳米岛材料, DCXRD Investigation of a Ge/Si(001)Island Multilayer Structure, 中国科技信息, 2008, 第 2 作者(170) Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, CHINESE PHYSICS LETTERS, 2007, 第 2 作者(171) SOI衬底和n~+衬底上SiGe HBT的研制, The Fabrication of SiGe HBT on SOI and n~+-Si Substrate, 电子器件, 2007, 第 2 作者(172) 重掺B对应变SiGe材料能带结构的影响, Band gap Narrowing in heavily B doped Si1-xGex strained layers, 物理学报, 2007, 第 2 作者(173) 基于无线功率放大器应用的多指结构SiGe HBT, A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2007, 第 1 作者(174) SOI衬底和n~+衬底上SiGe HBT的研制, The Fabrication of SiGe HBT on SOI and n~+-Si Substrate, 多媒体世界, 2007, 第 2 作者(175) 应用于WLAN的SiGe HBT高频功率特性的优化, Analysis and Optimization of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Local Area Network Applications, 半导体学报, 2007, 第 1 作者(176) 基于无线功率放大器应用的多指结构SiGe HBT, A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2007, 第 1 作者(177) DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure, 半导体学报, 2007, 第 2 作者(178) SiGe/Si 射频功率HBT 器件的研制, 2007, 第 1 作者(179) DCXRD分析Ge/Si(001)多层纳米岛材料, DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure, 半导体学报, 2007, 第 2 作者(180) Band gap narrowing in heavily B doped Si1-xGex strained layers, ACTA PHYSICA SINICA, 2007, 第 2 作者(181) A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor, A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor, 中国物理快报:英文版, 2007, 第 1 作者(182) Effect of heavy boron doping on the electrical characteristics of SiGeHBTs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 第 2 作者(183) Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, 中国物理快报:英文版, 2007, 第 2 作者(184) 硅基螺旋电感的几何参数设计和优化, Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate, 半导体学报, 2006, 第 1 作者(185) Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate, 半导体学报, 2006, 第 1 作者(186) Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2006, 第 1 作者(187) 用于无线PA的高频大功率Si1-xGex/Si HBT的设计和制作, Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2006, 第 1 作者(188) 高频大功率SiGe/SiHBT的设计, Design of High Power High Frequency SiGe/Si HBT, 半导体光电, 2006, 第 1 作者(189) 衬底结构特征对硅基螺旋电感性能的影响, 半导体学报, 2006, 第 1 作者(190) B在SiGe中的应变补偿作用, Strain Compensation in SiGe by Boron Doping, 半导体学报, 2005, 第 3 作者(191) 带隙法测定SiGe/Si材料的应变状态, A method to estimate the strain state of SiGe/Si by measuring the bandgap, 物理学报, 2005, 第 3 作者(192) 带胶剥离工艺粘附性实验研究, An Experimental Study on Adhesion in Lift-Off Technique, 微电子学, 2005, 第 2 作者(193) 过腐蚀自对准离子注入法制备SiGe HBT, Over Wet-Etching Self-Aligned Ion Implantation Doping Technology on Fabricating SiGe/Si HBT, 半导体学报, 2005, 第 3 作者(194) 高频大功率Si1-xGex/Si HBT研究进展, Development of high frequency high power Si1-xGex/Si HBT, 微纳电子技术, 2004, 第 1 作者
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