基本信息
薛春来  男  博导  中国科学院半导体研究所
电子邮件: clxue@semi.ac.cn
通信地址: 北京市912信箱
邮政编码: 100083

招生信息

   
招生专业
080903-微电子学与固体电子学
080901-物理电子学
招生方向
硅基光电子材料与器件
硅基光子集成
新型硅基红外探测器件

教育背景

2002-09--2007-07   中国科学院研究生院   博士
1998-09--2002-07   吉林大学   学士

工作经历

   
工作简历
2015-01~现在, 中国科学院半导体研究所, 研究员
2012-02~2015-01,中国科学院半导体研究所, 副研究员
2007-09~2012-02,中国科学院半导体研究所, 助理研究员
2002-09~2007-07,中国科学院研究生院, 博士
1998-09~2002-07,吉林大学, 学士

教授课程

硅基光电子学材料与器件

出版信息

   
发表论文
(1) Study of strain evolution mechanism in Ge1_xSnx materials grown by low temperature molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2022, 第 6 作者
(2) Si-Based Ge 320 ✕ 256 Focal Plane Array for Short-Wave Infrared Imaging, IEEE PHOTONICS TECHNOLOGY LETTERS, 2022, 第 7 作者
(3) 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application, PHOTONICS RESEARCH, 2021, 第 6 作者
(4) Spontaneous ferromagnetism and magnetoresistance hysteresis in Ge1–xSnx alloys, SCIENCE BULLETIN, 2021, 通讯作者
(5) Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 第 8 作者
(6) Negative Magnetoresistance in the GeSn Strip, ACS APPLIED MATERIALS & INTERFACES, 2021, 通讯作者
(7) Germanium lead alloy on insulator grown by rapid melting growth, JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 第 10 作者
(8) Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction, SMALL METHODS, 2021, 通讯作者
(9) Development of microfluidic platform capable of high-throughput absolute quantification of single-cell multiple intracellular proteins from tumor cell lines and patient tumor samples, BIOSENSORS & BIOELECTRONICS, 2020, 第 8 作者
(10) Epitaxial growth and characterization of Ge1-x-ySnxPby ternary alloys, JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 第 9 作者
(11) Investigation of lead surface segregation during germanium-lead epitaxial growth, JOURNAL OF MATERIALS SCIENCE, 2020, 第 9 作者
(12) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs, Journal of Luminescence, 2020, 第 7 作者
(13) Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn, SCIENTIFIC REPORTS, 2020, 通讯作者
(14) High-power back-to-back dual-absorption germanium photodetector, OPTICS LETTERS, 2020, 第 7 作者
(15) 56 Gbps high-speed Ge electro-absorption modulator, 56 Gbps high-speed Ge electro-absorption modulator, PHOTONICS RESEARCH, 2020, 第 5 作者
(16) High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling, IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 第 8 作者
(17) High-Performance Germanium Waveguide Photodetectors on Silicon, High-Performance Germanium Waveguide Photodetectors on Silicon, CHINESE PHYSICS LETTERS, 2020, 第 9 作者
(18) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs, JOURNAL OF LUMINESCENCE, 2020, 第 7 作者
(19) High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, 中国物理B:英文版, 2019, 第11作者
(20) Study of GePb photodetectors for shortwave infrared detection, OPTICS EXPRESS, 2019, 第 6 作者
(21) Germanium, Light, Science & Applications, 2019, 第 7 作者
(22) Highly Enhanced SWIR Image Sensors Based on Ge1-xSnx-Graphene Heterostructure Photodetector, ACS PHOTONICS, 2019, 通讯作者
(23) Core-Shell-Structured SiOx-C Composite for Lithium-Ion Battery Anodes, ENERGY TECHNOLOGY, 2019, 第 7 作者
(24) 25 x 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, PHOTONICS RESEARCH, 2019, 第 6 作者
(25) 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 光子学研究:英文版, 2019, 第 6 作者
(26) Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band., LIGHT-SCIENCE & APPLICATIONS, 2019, 通讯作者
(27) High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, CHINESE PHYSICS B, 2019, 通讯作者
(28) High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application, CHINESE PHYSICS B, 2019, 第 7 作者
(29) Plasma Treatment for Nitrogen-Doped 3D Graphene Framework by a Conductive Matrix with Sulfur for High-Performance Li-S Batteries, SMALL, 2019, 通讯作者
(30) Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 第 6 作者
(31) 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 光子学研究:英文版, 2019, 第 6 作者
(32) Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals, JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 第 9 作者
(33) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 3 作者
(34) Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source, SMALL, 2018, 通讯作者
(35) Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect, JOURNAL OF APPLIED PHYSICS, 2018, 第 6 作者
(36) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, JOURNAL OF SEMICONDUCTORS, 2018, 第 4 作者
(37) Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy, JOURNAL OF CRYSTAL GROWTH, 2018, 第 6 作者
(38) MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-Energy-Density Asymmetric Supercapacitors, ENERGY TECHNOLOGY, 2018, 第 6 作者
(39) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 3 作者
(40) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, 半导体学报:英文版, 2018, 第 4 作者
(41) Fabrication o Con ac Low-Resistance Ni Ohmic Contacts on n(+)-Ge1-xSnx, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 第 6 作者
(42) Infrared tubular microcavity based on rolled-up GeSn/Ge nanomembranes, NANOTECHNOLOGY, 2018, 第 8 作者
(43) Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx, IEEE Transactions On Electron Devices, 2018, 
(44) Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 第 8 作者
(45) Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 4 作者
(46) Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy, Letter, 2017, 第 6 作者
(47) Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy, OPTICS LETTERS, 2017, 第 6 作者
(48) Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 3 作者
(49) Numerical calculation of strain-N+-Ge1%xSnx/P+-δGe1%xSnx/N%-Ge1%y%zSiySnz/P+-Ge1%y%zSiySnz heterojunction tunnel field-effect transistor, Japanese Journal of Applied Physics, 2017, 
(50) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, JOURNAL OF SEMICONDUCTORS, 2017, 第 7 作者
(51) Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys, Phys. Chem. Chem. Phys., 2017, 第 4 作者
(52) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, 半导体学报(英文版), 2017, 第 7 作者
(53) Facile and Efficient Synthesis of a Microsized SiOx/C Core−Shell Composite as Anode Material for Lithium Ion Batteries, ENERGY & FUELS, 2017, 第 7 作者
(54) High-performance ball-milled SiOx anodes for lithium ion batteries, JOURNAL OF POWER SOURCES, 2017, 第 6 作者
(55) Influence of H-2 on strain evolution of high-Sn-content Ge1-x Sn (x) alloys, JOURNAL OF MATERIALS SCIENCE, 2017, 第 4 作者
(56) Numerical calculation of strain-N+-Ge1-xSnx/P+-delta Ge1-xSnx/N-Ge1-y-zSiySnz/P+-Ge1-y-zSiySnz heterojunction tunnel field-effect transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 第 3 作者
(57) 48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2017, 
(58) Defect-free high Sn-content GeSn on insulator grown by rapid melting growth, SCIENTIFIC REPORTS, 2016, 第 6 作者
(59) 可集成的硅基光互连技术研究, 2013 Annual Report on Investigation of Integratable Si-based Optical Interconnect Technology, 科技创新导报, 2016, 第 4 作者
(60) GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, APPLIED PHYSICS LETTERS, 2016, 第 5 作者
(61) High-performance lithium-ion battery with nano-porous polycrystalline silicon particles as anode, ELECTROCHIMICA ACTA, 2016, 第 6 作者
(62) SiGe/Si单光子雪崩光电二极管仿真, Simulation of SiGe/Si single photon avalanche photodiode, 红外与激光工程, 2016, 第 4 作者
(63) Research progress of Si-based germanium materials and devices, JOURNAL OF SEMICONDUCTORS, 2016, 第 4 作者
(64) High-speed waveguide-integrated Ge/Si avalanche photodetector, CHINESE PHYSICS B, 2016, 通讯作者
(65) “硅器时代”的信息社会, 科学, 2016, 第 1 作者
(66) Temperature dependent direct-bandgap light emission and optical gain of Ge, CHINESE PHYSICS B, 2016, 第 5 作者
(67) Cu2+1O coated polycrystalline Si nanoparticles as anode for lithium-ion battery, NANOSCALE RESEARCH LETTERS, 2016, 第 7 作者
(68) Silicon based GeSn p-i-n photodetector for SWIR detection, IEEE PHOTONICS JOURNAL, 2016, 通讯作者
(69) High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate, SCIENTIFIC REPORTS, 2016, 第 2 作者
(70) Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 第 5 作者
(71) Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA1U approach, Journal of applied physics, 2015, 第 3 作者
(72) Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy, JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 第 8 作者
(73) Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation, AIP ADVANCES, 2015, 第 3 作者
(74) High hole mobility GeSn on insulator formed by self-organized seeding lateral growth, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 第 5 作者
(75) Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser, CHINESE PHYSICS B, 2015, 第 3 作者
(76) High-Columbic-Efficiency Lithium Battery Based on Silicon Particle Materials, NANOSCALE RESEARCH LETTERS, 2015, 第 6 作者
(77) Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth, THIN SOLID FILMS, 2015, 第 4 作者
(78) Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07, IEEE ELECTRON DEVICE LETTERS, 2015, 第 5 作者
(79) Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 第 4 作者
(80) Comparative studies of band structures for biaxial (100)-, (110)-, and (111)strained GeSn: A first-principles calculation with GGA plus U approach, JOURNAL OF APPLIED PHYSICS, 2015, 第 3 作者
(81) Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn, SOLID-STATE ELECTRONICS, 2015, 第 6 作者
(82) Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth, THIN SOLID FILMS, 2015, 
(83) Theoretical study on optical gain characteristics of Ge_(1-x)Sn_x alloy for short-wave infrared laser, Chinese Physics. B, 2015, 第 3 作者
(84) Influence of growth and annealing temperature on the strain and surface morphology of Ge995Sn0.005 epilayer, APPLIED SURFACE SCIENCE, 2015, 第 3 作者
(85) High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector, INFRARED SENSORS, DEVICES, AND APPLICATIONS V, 2015, 
(86) High performance silicon waveguide germanium photodetector, CHINESE PHYSICS B, 2015, 第 2 作者
(87) Zero-bias high-responsivity high-bandwidth top-illuminated germanium p-i-n photodetectors, CHINESE PHYSICS B, 2014, 通讯作者
(88) Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature, CHINESE PHYSICS B, 2014, 第 5 作者
(89) Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration, PHYSICA B-CONDENSED MATTER, 2014, 第 3 作者
(90) Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance, NANOSCALE RESEARCH LETTERS, 2014, 第 8 作者
(91) Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate, APPLIED PHYSICS LETTERS, 2014, 第 5 作者
(92) Si基IV族光电器件的研究进展(一)—激光器, Progress in Study of Si-Based Group IV Optoelectronic Devices(Ⅰ)——Lasers, 激光与光电子学进展, 2014, 第 5 作者
(93) Compact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides, OPTICS EXPRESS, 2014, 第 5 作者
(94) Crystal Quality Improvement of GeSn Alloys by Thermal Annealing, ECS SOLID STATE LETTERS, 2014, 第 6 作者
(95) Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects, CHINESE PHYSICS B, 2014, 通讯作者
(96) Hedgehog-like polycrystalline Si as anode material for high performance Li-ion battery, RSC ADVANCES, 2014, 第 5 作者
(97) 硅基IV族光电器件研究进展(二)——光电探测器, Progress in the Study of Si-Based Group IV Optoelectronic Devices(Ⅱ)——Photodetectors, 激光与光电子学进展, 2014, 第 3 作者
(98) Growth of Ge1−xSnx/Ge strained-layer superlattices on Si(1 0 0) by molecular beam epitaxy, SUPERLATTICES AND MICROSTRUCTURES, 2013, 第 4 作者
(99) High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 第 2 作者
(100) Ge-Si quantum dots thin film solar cells, APPLIED PHYSICS LETTERS, 2013, 第 7 作者
(101) High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者
(102) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 3 作者
(103) 1×16 Ge-on-SOI PIN Photo-detector Array for Parallel Optical Interconnects, Chin. Phys. B, 2013, 通讯作者
(104) Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 第 9 作者
(105) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 3 作者
(106) Enhanced photoluminescence from porous silicon nanowire arrays, NANOSCALE RESEARCH LETTERS, 2013, 第 5 作者
(107) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 3 作者
(108) Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer, Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer, CHINESE PHYSICS LETTERS, 2013, 第 5 作者
(109) Si基Ge异质结构发光器件的研究进展, Progress in Ge/Si heterostructures for light emitters, 中国光学, 2013, 第 3 作者
(110) Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth, JOURNAL OF APPLIED PHYSICS, 2013, 第 5 作者
(111) High-responsivity GeSn short-wave infrared p-i-n photodetectors, APPLIED PHYSICS LETTERS, 2013, 通讯作者
(112) Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation, IEEE ELECTRON DEVICE LETTERS, 2013, 第 10 作者
(113) High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector, CHINESE PHYSICS B, 2013, 通讯作者
(114) Texture Evolution and Grain Competition in NiGe Film on Ge(001), APPLIED PHYSICS EXPRESS, 2013, 第 7 作者
(115) Impact of ammonia on the electrical properties of p-type Si nanowire arrays, JOURNAL OF APPLIED PHYSICS, 2013, 第 5 作者
(116) Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate, CHINESE PHYSICS B, 2013, 第 5 作者
(117) High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者
(118) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 3 作者
(119) Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation, SOLID-STATE ELECTRONICS, 2013, 第 8 作者
(120) Ag-assisted lateral etching of Si nanowires and its application to nanowire transfer, APPLIED PHYSICS LETTERS, 2013, 第 4 作者
(121) Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon, Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon, 中国物理:英文版, 2012, 第 3 作者
(122) Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping, OPTICS EXPRESS, 2012, 第 6 作者
(123) Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs, ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 其他(合作组作者)
(124) Lattice constant deviation from Vegard, Acta physica sinica, 2012, 
(125) High Hole Mobility in Strained Germanium-Tin (GeSn) Channel pMOSFET Fabricated on (111) Substrate, SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 
(126) Enhanced Current Transportation in Silicon-riched Nitride (SRN)/Silicon-riched Oxide (SRO) Multilayer Nanostructure, NANO-MICRO LETTERS, 2012, 第 4 作者
(127) Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells, APPLIED PHYSICS LETTERS, 2012, 第 5 作者
(128) High-speed and high-power uni-traveling-carrier photodetector, ACTA PHYSICA SINICA, 2012, 第 4 作者
(129) Ge-on-Si for Si-based integrated materials and photonic devices, FRONTIERS OF OPTOELECTRONICS, 2012, 第 3 作者
(130) Towards Direct Band-to-Band Tunneling in P-Channel Tunneling Field Effect Transistor (TFET): Technology Enablement by Germanium-Tin (GeSn), 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2012, 
(131) Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer, Digest of technical papers - symposium on vlsi technology, 2012, 第 5 作者
(132) Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal, IEEE ELECTRON DEVICE LETTERS, 2012, 第 10 作者
(133) Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor, International symposium on vlsi technology, systems, and applications, proceedings, 2012, 其他(合作组作者)
(134) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, Chinese Physics B, 2012, 第 4 作者
(135) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, CHINESE PHYSICS B, 2012, 第 4 作者
(136) Detailed balance limit efficiency of silicon intermediate band solar cells, CHINESE PHYSICS B, 2011, 第 3 作者
(137) Formation of rippled surface morphology during si/si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, CHINESE PHYSICS B, 2011, 第 3 作者
(138) InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, 中国物理:英文版, 2011, 第 6 作者
(139) Uneven splitting-ratio 1x2 multimode interference splitters based on silicon wire waveguides, CHINESE OPTICS LETTERS, 2011, 第 7 作者
(140) Detailed balance limit efficiency of silicon intermediate band solar cells, Detailed balance limit efficiency of silicon intermediate band solar cells, 中国物理:英文版, 2011, 第 3 作者
(141) Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 6 作者
(142) Uneven splitting-ratio 1×2 multimode interference splitters based on silicon wire waveguides, Chinese optics letters, 2011, 第 7 作者
(143) Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As, Ieee international conference on group iv photonics gfp, 2011, 第 3 作者
(144) UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation, Ieee international conference on group iv photonics gfp, 2011, 第 3 作者
(145) Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology, IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 第 4 作者
(146) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, CHINESE PHYSICS B, 2011, 第 5 作者
(147) Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, 中国物理:英文版, 2011, 第 3 作者
(148) The contributions of composition and strain to the phonon shift in ge1-xsnx alloys, SOLID STATE COMMUNICATIONS, 2011, 第 6 作者
(149) Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, CHINESE PHYSICS LETTERS, 2011, 第 3 作者
(150) Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜, Epitaxial growth of Ge_(0.975)Sn_(0.025) alloy films on Si(001) substrates by molecular beam epitaxy, 物理学报, 2011, 第 6 作者
(151) Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing, APPLIED SURFACE SCIENCE, 2011, 第 5 作者
(152) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, 中国物理:英文版, 2011, 第 5 作者
(153) Gesn p-i-n photodetector for all telecommunication bands detection, OPTICS EXPRESS, 2011, 第 3 作者
(154) Inp-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, CHINESE PHYSICS B, 2011, 第 6 作者
(155) Uneven splitting-ratio lx2 multimode interference splitters based on silicon wire waveguides, Uneven splitting-ratio lx2 multimode interference splitters based on silicon wire waveguides, 中国光学快报:英文版, 2011, 第 7 作者
(156) Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material, CHINESE PHYSICS B, 2011, 第 5 作者
(157) Highly efficient 1.53 mu m luminescence in erxyb2-xsi2o7 thin films grown on si substrate, MATERIALS LETTERS, 2011, 第 6 作者
(158) Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 6 作者
(159) Uneven splitting-ratio 1×2 multimode interference splitters based on silicon wire waveguides, Chinese optics letters, 2011, 第 7 作者
(160) Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As, Ieee international conference on group iv photonics gfp, 2011, 第 3 作者
(161) UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation, Ieee international conference on group iv photonics gfp, 2011, 第 3 作者
(162) Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology, IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 第 4 作者
(163) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, CHINESE PHYSICS B, 2011, 第 5 作者
(164) Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, 中国物理:英文版, 2011, 第 3 作者
(165) The contributions of composition and strain to the phonon shift in ge1-xsnx alloys, SOLID STATE COMMUNICATIONS, 2011, 第 6 作者
(166) Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, CHINESE PHYSICS LETTERS, 2011, 第 3 作者
(167) Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜, Epitaxial growth of Ge_(0.975)Sn_(0.025) alloy films on Si(001) substrates by molecular beam epitaxy, 物理学报, 2011, 第 6 作者
(168) Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing, APPLIED SURFACE SCIENCE, 2011, 第 5 作者
(169) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, 中国物理:英文版, 2011, 第 5 作者
(170) Gesn p-i-n photodetector for all telecommunication bands detection, OPTICS EXPRESS, 2011, 第 3 作者
(171) Inp-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, CHINESE PHYSICS B, 2011, 第 6 作者
(172) Uneven splitting-ratio lx2 multimode interference splitters based on silicon wire waveguides, Uneven splitting-ratio lx2 multimode interference splitters based on silicon wire waveguides, 中国光学快报:英文版, 2011, 第 7 作者
(173) Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material, CHINESE PHYSICS B, 2011, 第 5 作者
(174) Highly efficient 1.53 mu m luminescence in erxyb2-xsi2o7 thin films grown on si substrate, MATERIALS LETTERS, 2011, 第 6 作者
(175) 杂质带太阳能电池研究, Research on Impurity Band Photovoltaic Solar Cells, 中国集成电路, 2010, 第 2 作者
(176) 外延生长Gel-xSnx合金的研究进展, 材料导报, 2010, 第 5 作者
(177) 硅基室温电流注入Ge/Si异质结发光二极管, 激光与光电子学进展, 2010, 第 3 作者
(178) 外延生长Ge1-xSnx合金的研究进展, Progress in the Epitaxy Growth of Ge1-xSnx Alloy, 材料导报, 2010, 第 5 作者
(179) Fabrication of silicon-based template-assisted nanoelectrode arrays and ohmic contact properties investigation, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 第 4 作者
(180) 杂质带太阳能电池研究, Research on Impurity Band Photovoltaic Solar Cells, 中国集成电路, 2010, 第 2 作者
(181) 外延生长Gel-xSnx合金的研究进展, 材料导报, 2010, 第 5 作者
(182) 硅基室温电流注入Ge/Si异质结发光二极管, 激光与光电子学进展, 2010, 第 3 作者
(183) 外延生长Ge1-xSnx合金的研究进展, Progress in the Epitaxy Growth of Ge1-xSnx Alloy, 材料导报, 2010, 第 5 作者
(184) Fabrication of silicon-based template-assisted nanoelectrode arrays and ohmic contact properties investigation, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 第 4 作者
(185) Zero biased Ge-on-Si a bandwidth of 4.72 photodetector with GHz at 1550 nm, Zero biased Ge-on-Si a bandwidth of 4.72 photodetector with GHz at 1550 nm, 中国物理:英文版, 2009, 第 2 作者
(186) 1 x 4 ge-on-soi pin photodetector array for parallel optical interconnects, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2009, 通讯作者
(187) Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm, CHINESE PHYSICS B, 2009, 第 2 作者
(188) Si衬底上Ge材料的UHVCVD生长, Growth of Ge on Silicon by Ultrahigh Vacuum Chemical Vapor Deposition, 材料科学与工程学报, 2009, 第 2 作者
(189) Electroluminescence from Ge on Si substrate at room temperature, APPLIED PHYSICS LETTERS, 2009, 第 3 作者
(190) Zero biased Ge-on-Si a bandwidth of 4.72 photodetector with GHz at 1550 nm, Zero biased Ge-on-Si a bandwidth of 4.72 photodetector with GHz at 1550 nm, 中国物理:英文版, 2009, 第 2 作者
(191) 1 x 4 ge-on-soi pin photodetector array for parallel optical interconnects, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2009, 通讯作者
(192) Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm, CHINESE PHYSICS B, 2009, 第 2 作者
(193) Si衬底上Ge材料的UHVCVD生长, Growth of Ge on Silicon by Ultrahigh Vacuum Chemical Vapor Deposition, 材料科学与工程学报, 2009, 第 2 作者
(194) Electroluminescence from Ge on Si substrate at room temperature, APPLIED PHYSICS LETTERS, 2009, 第 3 作者
(195) DCXRD分析Ge/Si(001)多层纳米岛材料, DCXRD Investigation of a Ge/Si(001)Island Multilayer Structure, 中国科技信息, 2008, 第 2 作者
(196) DCXRD分析Ge/Si(001)多层纳米岛材料, DCXRD Investigation of a Ge/Si(001)Island Multilayer Structure, 中国科技信息, 2008, 第 2 作者
(197) Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, CHINESE PHYSICS LETTERS, 2007, 第 2 作者
(198) SOI衬底和n~+衬底上SiGe HBT的研制, The Fabrication of SiGe HBT on SOI and n~+-Si Substrate, 电子器件, 2007, 第 2 作者
(199) 重掺B对应变SiGe材料能带结构的影响, Band gap Narrowing in heavily B doped Si1-xGex strained layers, 物理学报, 2007, 第 2 作者
(200) 基于无线功率放大器应用的多指结构SiGe HBT, A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2007, 第 1 作者
(201) SOI衬底和n~+衬底上SiGe HBT的研制, The Fabrication of SiGe HBT on SOI and n~+-Si Substrate, 多媒体世界, 2007, 第 2 作者
(202) 应用于WLAN的SiGe HBT高频功率特性的优化, Analysis and Optimization of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Local Area Network Applications, 半导体学报, 2007, 第 1 作者
(203) 基于无线功率放大器应用的多指结构SiGe HBT, A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2007, 第 1 作者
(204) DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure, 半导体学报, 2007, 第 2 作者
(205) SiGe/Si 射频功率HBT 器件的研制, 2007, 第 1 作者
(206) DCXRD分析Ge/Si(001)多层纳米岛材料, DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure, 半导体学报, 2007, 第 2 作者
(207) Band gap narrowing in heavily B doped Si1-xGex strained layers, ACTA PHYSICA SINICA, 2007, 第 2 作者
(208) A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor, A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor, 中国物理快报:英文版, 2007, 第 1 作者
(209) Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, 中国物理快报:英文版, 2007, 第 2 作者
(210) Effect of heavy boron doping on the electrical characteristics of SiGeHBTs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 第 2 作者
(211) Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, CHINESE PHYSICS LETTERS, 2007, 第 2 作者
(212) SOI衬底和n~+衬底上SiGe HBT的研制, The Fabrication of SiGe HBT on SOI and n~+-Si Substrate, 电子器件, 2007, 第 2 作者
(213) 重掺B对应变SiGe材料能带结构的影响, Band gap Narrowing in heavily B doped Si1-xGex strained layers, 物理学报, 2007, 第 2 作者
(214) 基于无线功率放大器应用的多指结构SiGe HBT, A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2007, 第 1 作者
(215) SOI衬底和n~+衬底上SiGe HBT的研制, The Fabrication of SiGe HBT on SOI and n~+-Si Substrate, 多媒体世界, 2007, 第 2 作者
(216) 应用于WLAN的SiGe HBT高频功率特性的优化, Analysis and Optimization of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Local Area Network Applications, 半导体学报, 2007, 第 1 作者
(217) 基于无线功率放大器应用的多指结构SiGe HBT, A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2007, 第 1 作者
(218) DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure, 半导体学报, 2007, 第 2 作者
(219) SiGe/Si 射频功率HBT 器件的研制, 2007, 第 1 作者
(220) DCXRD分析Ge/Si(001)多层纳米岛材料, DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure, 半导体学报, 2007, 第 2 作者
(221) Band gap narrowing in heavily B doped Si1-xGex strained layers, ACTA PHYSICA SINICA, 2007, 第 2 作者
(222) A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor, A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor, 中国物理快报:英文版, 2007, 第 1 作者
(223) Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, 中国物理快报:英文版, 2007, 第 2 作者
(224) Effect of heavy boron doping on the electrical characteristics of SiGeHBTs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 第 2 作者
(225) Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate, 半导体学报, 2006, 第 1 作者
(226) 硅基螺旋电感的几何参数设计和优化, Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate, 半导体学报, 2006, 第 1 作者
(227) Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2006, 第 1 作者
(228) 用于无线PA的高频大功率Si1-xGex/Si HBT的设计和制作, Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2006, 第 1 作者
(229) 高频大功率SiGe/SiHBT的设计, Design of High Power High Frequency SiGe/Si HBT, 半导体光电, 2006, 第 1 作者
(230) 衬底结构特征对硅基螺旋电感性能的影响, 半导体学报, 2006, 第 1 作者
(231) Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate, 半导体学报, 2006, 第 1 作者
(232) 硅基螺旋电感的几何参数设计和优化, Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate, 半导体学报, 2006, 第 1 作者
(233) Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2006, 第 1 作者
(234) 用于无线PA的高频大功率Si1-xGex/Si HBT的设计和制作, Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2006, 第 1 作者
(235) 高频大功率SiGe/SiHBT的设计, Design of High Power High Frequency SiGe/Si HBT, 半导体光电, 2006, 第 1 作者
(236) 衬底结构特征对硅基螺旋电感性能的影响, 半导体学报, 2006, 第 1 作者
(237) 过腐蚀自对准离子注入法制备SiGe HBT, Over Wet-Etching Self-Aligned Ion Implantation Doping Technology on Fabricating SiGe/Si HBT, 半导体学报, 2005, 第 3 作者
(238) B在SiGe中的应变补偿作用, Strain Compensation in SiGe by Boron Doping, 半导体学报, 2005, 第 3 作者
(239) 带隙法测定SiGe/Si材料的应变状态, A method to estimate the strain state of SiGe/Si by measuring the bandgap, 物理学报, 2005, 第 3 作者
(240) 带胶剥离工艺粘附性实验研究, An Experimental Study on Adhesion in Lift-Off Technique, 微电子学, 2005, 第 2 作者
(241) 过腐蚀自对准离子注入法制备SiGe HBT, Over Wet-Etching Self-Aligned Ion Implantation Doping Technology on Fabricating SiGe/Si HBT, 半导体学报, 2005, 第 3 作者
(242) B在SiGe中的应变补偿作用, Strain Compensation in SiGe by Boron Doping, 半导体学报, 2005, 第 3 作者
(243) 带隙法测定SiGe/Si材料的应变状态, A method to estimate the strain state of SiGe/Si by measuring the bandgap, 物理学报, 2005, 第 3 作者
(244) 带胶剥离工艺粘附性实验研究, An Experimental Study on Adhesion in Lift-Off Technique, 微电子学, 2005, 第 2 作者
(245) 高频大功率Si1-xGex/Si HBT研究进展, Development of high frequency high power Si1-xGex/Si HBT, 微纳电子技术, 2004, 第 1 作者
(246) 高频大功率Si1-xGex/Si HBT研究进展, Development of high frequency high power Si1-xGex/Si HBT, 微纳电子技术, 2004, 第 1 作者

科研活动

   
科研项目
( 1 ) 硅基能带调控发光材料与激光器件, 负责人, 国家任务, 2013-01--2017-12
( 2 ) 硅基Ⅳ族材料红外光子学探测器件的基础研究, 负责人, 国家任务, 2012-01--2015-12
( 3 ) Si/Ge长波长单光子探测器基础研究, 负责人, 国家任务, 2010-01--2012-12
( 4 ) 硅基Ⅳ族合金材料能带调控机制与双异质结激光器的构建, 负责人, 国家任务, 2014-01--2017-12
( 5 ) 硅基锗锡多量子阱材料制备及发光特性研究, 负责人, 国家任务, 2017-01--2020-12
( 6 ) 单细胞蛋白定量分析及肿瘤研究中的应用创新交叉团队, 负责人, 中国科学院计划, 2018-01--2020-12
( 7 ) 硅基短波红外雪崩光电探测器及其阵列的基础研究, 负责人, 国家任务, 2019-01--2022-12
( 8 ) 光子集成芯片智能化耦合封测设备, 负责人, 中国科学院计划, 2019-01--2020-12
( 9 ) 面向单片集成的硅基短波红外成像新技术研究, 负责人, 中国科学院计划, 2019-09--2024-08
( 10 ) 硅基光电子材料与器件, 负责人, 国家任务, 2022-01--2026-12