基本信息
薛春来  男  博导  中国科学院半导体研究所
电子邮件: clxue@semi.ac.cn
通信地址: 北京市912信箱
邮政编码: 100083

招生信息

   
招生专业
080903-微电子学与固体电子学
080901-物理电子学
招生方向
硅基光电子材料与器件
硅基光子集成
新型硅基红外探测器件

教育背景

2002-09--2007-07   中国科学院研究生院   博士
1998-09--2002-07   吉林大学   学士

工作经历

   
工作简历
2015-01~现在, 中国科学院半导体研究所, 研究员
2012-02~2015-01,中国科学院半导体研究所, 副研究员
2007-09~2012-02,中国科学院半导体研究所, 助理研究员
2002-09~2007-07,中国科学院研究生院, 博士
1998-09~2002-07,吉林大学, 学士

教授课程

硅基光电子学材料与器件

出版信息

   
发表论文
(1) Study of strain evolution mechanism in Ge1_xSnx materials grown by low temperature molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2022, 第 6 作者
(2) Si-Based Ge 320 x 256 Focal Plane Array for Short-Wave Infrared Imaging, IEEE PHOTONICS TECHNOLOGY LETTERS, 2022, 第 7 作者
(3) Si-Based Ge 320 ✕ 256 Focal Plane Array for Short-Wave Infrared Imaging, IEEE PHOTONICS TECHNOLOGY LETTERS, 2022, 第 7 作者
(4) Study of strain evolution mechanism in Ge1_xSnx materials grown by low temperature molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2022, 第 6 作者
(5) Si-Based Ge 320 x 256 Focal Plane Array for Short-Wave Infrared Imaging, IEEE PHOTONICS TECHNOLOGY LETTERS, 2022, 第 7 作者
(6) Si-Based Ge 320 ✕ 256 Focal Plane Array for Short-Wave Infrared Imaging, IEEE PHOTONICS TECHNOLOGY LETTERS, 2022, 第 7 作者
(7) 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application, PHOTONICS RESEARCH, 2021, 第 6 作者
(8) Spontaneous ferromagnetism and magnetoresistance hysteresis in Ge1–xSnx alloys, SCIENCE BULLETIN, 2021, 通讯作者
(9) Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 第 8 作者
(10) Negative Magnetoresistance in the GeSn Strip, ACS APPLIED MATERIALS & INTERFACES, 2021, 通讯作者
(11) Germanium lead alloy on insulator grown by rapid melting growth, JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 第 10 作者
(12) 新型硅基IV族合金材料生长及光电器件研究进展(特邀), Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited), 光子学报, 2021, 第 6 作者
(13) Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction, SMALL METHODS, 2021, 通讯作者
(14) 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application, PHOTONICS RESEARCH, 2021, 第 6 作者
(15) Spontaneous ferromagnetism and magnetoresistance hysteresis in Ge1–xSnx alloys, SCIENCE BULLETIN, 2021, 通讯作者
(16) Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 第 8 作者
(17) Negative Magnetoresistance in the GeSn Strip, ACS APPLIED MATERIALS & INTERFACES, 2021, 通讯作者
(18) Germanium lead alloy on insulator grown by rapid melting growth, JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 第 10 作者
(19) 新型硅基IV族合金材料生长及光电器件研究进展(特邀), Research Progress on the Growth of Novel Silicon-based IV Group Alloy Materials and Optoelectronic Devices(Invited), 光子学报, 2021, 第 6 作者
(20) Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction, SMALL METHODS, 2021, 通讯作者
(21) Epitaxial growth and characterization of Ge1-x-ySnxPby ternary alloys, JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 第 9 作者
(22) Development of microfluidic platform capable of high-throughput absolute quantification of single-cell multiple intracellular proteins from tumor cell lines and patient tumor samples, BIOSENSORS & BIOELECTRONICS, 2020, 第 8 作者
(23) Investigation of lead surface segregation during germanium–lead epitaxial growth, JOURNAL OF MATERIALS SCIENCE, 2020, 第 9 作者
(24) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs, Journal of Luminescence, 2020, 第 7 作者
(25) High-power back-to-back dual-absorption germanium photodetector, OPTICS LETTERS, 2020, 第 7 作者
(26) Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn, SCIENTIFIC REPORTS, 2020, 通讯作者
(27) 56 Gbps high-speed Ge electro-absorption modulator, 56 Gbps high-speed Ge electro-absorption modulator, PHOTONICS RESEARCH, 2020, 第 5 作者
(28) High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling, IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 第 8 作者
(29) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs, JOURNAL OF LUMINESCENCE, 2020, 第 7 作者
(30) High-Performance Germanium Waveguide Photodetectors on Silicon, High-Performance Germanium Waveguide Photodetectors on Silicon*, CHINESE PHYSICS LETTERS, 2020, 第 9 作者
(31) Epitaxial growth and characterization of Ge1-x-ySnxPby ternary alloys, JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 第 9 作者
(32) Development of microfluidic platform capable of high-throughput absolute quantification of single-cell multiple intracellular proteins from tumor cell lines and patient tumor samples, BIOSENSORS & BIOELECTRONICS, 2020, 第 8 作者
(33) Investigation of lead surface segregation during germanium–lead epitaxial growth, JOURNAL OF MATERIALS SCIENCE, 2020, 第 9 作者
(34) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs, Journal of Luminescence, 2020, 第 7 作者
(35) High-power back-to-back dual-absorption germanium photodetector, OPTICS LETTERS, 2020, 第 7 作者
(36) Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn, SCIENTIFIC REPORTS, 2020, 通讯作者
(37) 56 Gbps high-speed Ge electro-absorption modulator, 56 Gbps high-speed Ge electro-absorption modulator, PHOTONICS RESEARCH, 2020, 第 5 作者
(38) High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling, IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 第 8 作者
(39) Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 mu m LEDs, JOURNAL OF LUMINESCENCE, 2020, 第 7 作者
(40) High-Performance Germanium Waveguide Photodetectors on Silicon, High-Performance Germanium Waveguide Photodetectors on Silicon*, CHINESE PHYSICS LETTERS, 2020, 第 9 作者
(41) Study of GePb photodetectors for shortwave infrared detection, OPTICS EXPRESS, 2019, 第 6 作者
(42) High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, 中国物理B:英文版, 2019, 第11作者
(43) Germanium, Light, Science & Applications, 2019, 第 7 作者
(44) Highly Enhanced SWIR Image Sensors Based on Ge1-xSnx-Graphene Heterostructure Photodetector, ACS PHOTONICS, 2019, 通讯作者
(45) Core-Shell-Structured SiOx-C Composite for Lithium-Ion Battery Anodes, ENERGY TECHNOLOGY, 2019, 第 7 作者
(46) 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 光子学研究:英文版, 2019, 第 6 作者
(47) 25 x 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, PHOTONICS RESEARCH, 2019, 第 6 作者
(48) Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band., LIGHT-SCIENCE & APPLICATIONS, 2019, 通讯作者
(49) High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application, CHINESE PHYSICS B, 2019, 第 7 作者
(50) High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, CHINESE PHYSICS B, 2019, 通讯作者
(51) Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 第 6 作者
(52) Plasma Treatment for Nitrogen-Doped 3D Graphene Framework by a Conductive Matrix with Sulfur for High-Performance Li-S Batteries, SMALL, 2019, 通讯作者
(53) 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 光子学研究:英文版, 2019, 第 6 作者
(54) Study of GePb photodetectors for shortwave infrared detection, OPTICS EXPRESS, 2019, 第 6 作者
(55) High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, 中国物理B:英文版, 2019, 第11作者
(56) Germanium, Light, Science & Applications, 2019, 第 7 作者
(57) Highly Enhanced SWIR Image Sensors Based on Ge1-xSnx-Graphene Heterostructure Photodetector, ACS PHOTONICS, 2019, 通讯作者
(58) Core-Shell-Structured SiOx-C Composite for Lithium-Ion Battery Anodes, ENERGY TECHNOLOGY, 2019, 第 7 作者
(59) 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 光子学研究:英文版, 2019, 第 6 作者
(60) 25 x 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, PHOTONICS RESEARCH, 2019, 第 6 作者
(61) Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band., LIGHT-SCIENCE & APPLICATIONS, 2019, 通讯作者
(62) High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application, CHINESE PHYSICS B, 2019, 第 7 作者
(63) High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers, CHINESE PHYSICS B, 2019, 通讯作者
(64) Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 第 6 作者
(65) Plasma Treatment for Nitrogen-Doped 3D Graphene Framework by a Conductive Matrix with Sulfur for High-Performance Li-S Batteries, SMALL, 2019, 通讯作者
(66) 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 25×50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating, 光子学研究:英文版, 2019, 第 6 作者
(67) Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals, JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 第 9 作者
(68) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 3 作者
(69) Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source, SMALL, 2018, 通讯作者
(70) Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect, JOURNAL OF APPLIED PHYSICS, 2018, 第 6 作者
(71) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, JOURNAL OF SEMICONDUCTORS, 2018, 第 4 作者
(72) Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy, JOURNAL OF CRYSTAL GROWTH, 2018, 第 6 作者
(73) MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-Energy-Density Asymmetric Supercapacitors, ENERGY TECHNOLOGY, 2018, 第 6 作者
(74) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 3 作者
(75) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, 半导体学报:英文版, 2018, 第 4 作者
(76) Fabrication o Con ac Low-Resistance Ni Ohmic Contacts on n(+)-Ge1-xSnx, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 第 6 作者
(77) Infrared tubular microcavity based on rolled-up GeSn/Ge nanomembranes, NANOTECHNOLOGY, 2018, 第 8 作者
(78) Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 第 8 作者
(79) Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx, IEEE Transactions On Electron Devices, 2018, 
(80) Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 4 作者
(81) Dual-Emission and Two Charge-Transfer States in Ytterbium-doped Cesium Lead Halide Perovskite Solid Nanocrystals, JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 第 9 作者
(82) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 3 作者
(83) Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source, SMALL, 2018, 通讯作者
(84) Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect, JOURNAL OF APPLIED PHYSICS, 2018, 第 6 作者
(85) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, JOURNAL OF SEMICONDUCTORS, 2018, 第 4 作者
(86) Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy, JOURNAL OF CRYSTAL GROWTH, 2018, 第 6 作者
(87) MnO2 Nanoflowers and Reduced Graphene Oxide 3D Composites for Ultrahigh-Energy-Density Asymmetric Supercapacitors, ENERGY TECHNOLOGY, 2018, 第 6 作者
(88) Recent progress in GeSn growth and GeSn-based photonic devices, Recent progress in GeSn growth and GeSn-based photonic devices, 半导体学报:英文版, 2018, 第 3 作者
(89) Research progress of Ge on insulator grown by rapid melting growth, Research progress of Ge on insulator grown by rapid melting growth, 半导体学报:英文版, 2018, 第 4 作者
(90) Fabrication o Con ac Low-Resistance Ni Ohmic Contacts on n(+)-Ge1-xSnx, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 第 6 作者
(91) Infrared tubular microcavity based on rolled-up GeSn/Ge nanomembranes, NANOTECHNOLOGY, 2018, 第 8 作者
(92) Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 第 8 作者
(93) Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx, IEEE Transactions On Electron Devices, 2018, 
(94) Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 4 作者
(95) Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy, Letter, 2017, 第 6 作者
(96) Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy, OPTICS LETTERS, 2017, 第 6 作者
(97) Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 3 作者
(98) Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys, Phys. Chem. Chem. Phys., 2017, 第 4 作者
(99) Numerical calculation of strain-N+-Ge1%xSnx/P+-δGe1%xSnx/N%-Ge1%y%zSiySnz/P+-Ge1%y%zSiySnz heterojunction tunnel field-effect transistor, Japanese Journal of Applied Physics, 2017, 
(100) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, 半导体学报(英文版), 2017, 第 7 作者
(101) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, JOURNAL OF SEMICONDUCTORS, 2017, 第 7 作者
(102) Facile and Efficient Synthesis of a Microsized SiOx/C Core−Shell Composite as Anode Material for Lithium Ion Batteries, ENERGY & FUELS, 2017, 第 7 作者
(103) High-performance ball-milled SiOx anodes for lithium ion batteries, JOURNAL OF POWER SOURCES, 2017, 第 6 作者
(104) Influence of H-2 on strain evolution of high-Sn-content Ge1-x Sn (x) alloys, JOURNAL OF MATERIALS SCIENCE, 2017, 第 4 作者
(105) Numerical calculation of strain-N+-Ge1-xSnx/P+-delta Ge1-xSnx/N-Ge1-y-zSiySnz/P+-Ge1-y-zSiySnz heterojunction tunnel field-effect transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 第 3 作者
(106) 48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2017, 第 7 作者
(107) Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy, Letter, 2017, 第 6 作者
(108) Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy, OPTICS LETTERS, 2017, 第 6 作者
(109) Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 3 作者
(110) Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys, Phys. Chem. Chem. Phys., 2017, 第 4 作者
(111) Numerical calculation of strain-N+-Ge1%xSnx/P+-δGe1%xSnx/N%-Ge1%y%zSiySnz/P+-Ge1%y%zSiySnz heterojunction tunnel field-effect transistor, Japanese Journal of Applied Physics, 2017, 
(112) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, 半导体学报(英文版), 2017, 第 7 作者
(113) High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect, JOURNAL OF SEMICONDUCTORS, 2017, 第 7 作者
(114) Facile and Efficient Synthesis of a Microsized SiOx/C Core−Shell Composite as Anode Material for Lithium Ion Batteries, ENERGY & FUELS, 2017, 第 7 作者
(115) High-performance ball-milled SiOx anodes for lithium ion batteries, JOURNAL OF POWER SOURCES, 2017, 第 6 作者
(116) Influence of H-2 on strain evolution of high-Sn-content Ge1-x Sn (x) alloys, JOURNAL OF MATERIALS SCIENCE, 2017, 第 4 作者
(117) Numerical calculation of strain-N+-Ge1-xSnx/P+-delta Ge1-xSnx/N-Ge1-y-zSiySnz/P+-Ge1-y-zSiySnz heterojunction tunnel field-effect transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 第 3 作者
(118) 48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2017, 第 7 作者
(119) Defect-free high Sn-content GeSn on insulator grown by rapid melting growth, SCIENTIFIC REPORTS, 2016, 第 6 作者
(120) 可集成的硅基光互连技术研究, 2013 Annual Report on Investigation of Integratable Si-based Optical Interconnect Technology, 科技创新导报, 2016, 第 4 作者
(121) GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, APPLIED PHYSICS LETTERS, 2016, 第 5 作者
(122) High-performance lithium-ion battery with nano-porous polycrystalline silicon particles as anode, ELECTROCHIMICA ACTA, 2016, 第 6 作者
(123) Research progress of Si-based germanium materials and devices, JOURNAL OF SEMICONDUCTORS, 2016, 第 4 作者
(124) SiGe/Si单光子雪崩光电二极管仿真, Simulation of SiGe/Si single photon avalanche photodiode, 红外与激光工程, 2016, 第 4 作者
(125) High-speed waveguide-integrated Ge/Si avalanche photodetector, CHINESE PHYSICS B, 2016, 通讯作者
(126) “硅器时代”的信息社会, 科学, 2016, 第 1 作者
(127) Temperature dependent direct-bandgap light emission and optical gain of Ge, CHINESE PHYSICS B, 2016, 第 5 作者
(128) Cu2+1O coated polycrystalline Si nanoparticles as anode for lithium-ion battery, NANOSCALE RESEARCH LETTERS, 2016, 第 7 作者
(129) High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate, SCIENTIFIC REPORTS, 2016, 第 2 作者
(130) Silicon based GeSn p-i-n photodetector for SWIR detection, IEEE PHOTONICS JOURNAL, 2016, 通讯作者
(131) Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 第 5 作者
(132) Defect-free high Sn-content GeSn on insulator grown by rapid melting growth, SCIENTIFIC REPORTS, 2016, 第 6 作者
(133) 可集成的硅基光互连技术研究, 2013 Annual Report on Investigation of Integratable Si-based Optical Interconnect Technology, 科技创新导报, 2016, 第 4 作者
(134) GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, APPLIED PHYSICS LETTERS, 2016, 第 5 作者
(135) High-performance lithium-ion battery with nano-porous polycrystalline silicon particles as anode, ELECTROCHIMICA ACTA, 2016, 第 6 作者
(136) Research progress of Si-based germanium materials and devices, JOURNAL OF SEMICONDUCTORS, 2016, 第 4 作者
(137) SiGe/Si单光子雪崩光电二极管仿真, Simulation of SiGe/Si single photon avalanche photodiode, 红外与激光工程, 2016, 第 4 作者
(138) High-speed waveguide-integrated Ge/Si avalanche photodetector, CHINESE PHYSICS B, 2016, 通讯作者
(139) “硅器时代”的信息社会, 科学, 2016, 第 1 作者
(140) Temperature dependent direct-bandgap light emission and optical gain of Ge, CHINESE PHYSICS B, 2016, 第 5 作者
(141) Cu2+1O coated polycrystalline Si nanoparticles as anode for lithium-ion battery, NANOSCALE RESEARCH LETTERS, 2016, 第 7 作者
(142) High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate, SCIENTIFIC REPORTS, 2016, 第 2 作者
(143) Silicon based GeSn p-i-n photodetector for SWIR detection, IEEE PHOTONICS JOURNAL, 2016, 通讯作者
(144) Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 第 5 作者
(145) Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA1U approach, Journal of applied physics, 2015, 第 3 作者
(146) Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy, JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 第 8 作者
(147) Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation, AIP ADVANCES, 2015, 第 3 作者
(148) High hole mobility GeSn on insulator formed by self-organized seeding lateral growth, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 第 5 作者
(149) Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth, THIN SOLID FILMS, 2015, 第 4 作者
(150) High-Columbic-Efficiency Lithium Battery Based on Silicon Particle Materials, NANOSCALE RESEARCH LETTERS, 2015, 第 6 作者
(151) Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser, CHINESE PHYSICS B, 2015, 第 3 作者
(152) Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07, IEEE ELECTRON DEVICE LETTERS, 2015, 第 5 作者
(153) Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 第 4 作者
(154) Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn, SOLID-STATE ELECTRONICS, 2015, 第 6 作者
(155) Comparative studies of band structures for biaxial (100)-, (110)-, and (111)strained GeSn: A first-principles calculation with GGA plus U approach, JOURNAL OF APPLIED PHYSICS, 2015, 第 3 作者
(156) Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth, THIN SOLID FILMS, 2015, 
(157) Theoretical study on optical gain characteristics of Ge_(1-x)Sn_x alloy for short-wave infrared laser, Chinese Physics. B, 2015, 第 3 作者
(158) High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector, INFRARED SENSORS, DEVICES, AND APPLICATIONS V, 2015, 第 2 作者
(159) Influence of growth and annealing temperature on the strain and surface morphology of Ge995Sn0.005 epilayer, APPLIED SURFACE SCIENCE, 2015, 第 3 作者
(160) High performance silicon waveguide germanium photodetector, CHINESE PHYSICS B, 2015, 第 2 作者
(161) Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA1U approach, Journal of applied physics, 2015, 第 3 作者
(162) Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy, JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 第 8 作者
(163) Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation, AIP ADVANCES, 2015, 第 3 作者
(164) High hole mobility GeSn on insulator formed by self-organized seeding lateral growth, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 第 5 作者
(165) Lateral growth of single-crystal Ge on insulating substrate using amorphous Si seed by rapid melting growth, THIN SOLID FILMS, 2015, 第 4 作者
(166) High-Columbic-Efficiency Lithium Battery Based on Silicon Particle Materials, NANOSCALE RESEARCH LETTERS, 2015, 第 6 作者
(167) Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser, CHINESE PHYSICS B, 2015, 第 3 作者
(168) Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07, IEEE ELECTRON DEVICE LETTERS, 2015, 第 5 作者
(169) Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 第 4 作者
(170) Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn, SOLID-STATE ELECTRONICS, 2015, 第 6 作者
(171) Comparative studies of band structures for biaxial (100)-, (110)-, and (111)strained GeSn: A first-principles calculation with GGA plus U approach, JOURNAL OF APPLIED PHYSICS, 2015, 第 3 作者
(172) Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth, THIN SOLID FILMS, 2015, 
(173) Theoretical study on optical gain characteristics of Ge_(1-x)Sn_x alloy for short-wave infrared laser, Chinese Physics. B, 2015, 第 3 作者
(174) High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector, INFRARED SENSORS, DEVICES, AND APPLICATIONS V, 2015, 第 2 作者
(175) Influence of growth and annealing temperature on the strain and surface morphology of Ge995Sn0.005 epilayer, APPLIED SURFACE SCIENCE, 2015, 第 3 作者
(176) High performance silicon waveguide germanium photodetector, CHINESE PHYSICS B, 2015, 第 2 作者
(177) Hedgehog-like polycrystalline Si as anode material for high performance Li-ion battery, RSC ADVANCES, 2014, 第 5 作者
(178) Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects, CHINESE PHYSICS B, 2014, 通讯作者
(179) 硅基IV族光电器件研究进展(二)——光电探测器, Progress in the Study of Si-Based Group IV Optoelectronic Devices(Ⅱ)——Photodetectors, 激光与光电子学进展, 2014, 第 3 作者
(180) Zero-bias high-responsivity high-bandwidth top-illuminated germanium p-i-n photodetectors, CHINESE PHYSICS B, 2014, 通讯作者
(181) Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature, CHINESE PHYSICS B, 2014, 第 5 作者
(182) Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration, PHYSICA B-CONDENSED MATTER, 2014, 第 3 作者
(183) Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance, NANOSCALE RESEARCH LETTERS, 2014, 第 8 作者
(184) Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate, APPLIED PHYSICS LETTERS, 2014, 第 5 作者
(185) Si基IV族光电器件的研究进展(一)—激光器, Progress in Study of Si-Based Group IV Optoelectronic Devices(Ⅰ)——Lasers, 激光与光电子学进展, 2014, 第 5 作者
(186) Crystal Quality Improvement of GeSn Alloys by Thermal Annealing, ECS SOLID STATE LETTERS, 2014, 第 6 作者
(187) Compact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides, OPTICS EXPRESS, 2014, 第 5 作者
(188) Hedgehog-like polycrystalline Si as anode material for high performance Li-ion battery, RSC ADVANCES, 2014, 第 5 作者
(189) Sixteen-element Ge-on-SOI PIN photo-detector arrays for parallel optical interconnects, CHINESE PHYSICS B, 2014, 通讯作者
(190) 硅基IV族光电器件研究进展(二)——光电探测器, Progress in the Study of Si-Based Group IV Optoelectronic Devices(Ⅱ)——Photodetectors, 激光与光电子学进展, 2014, 第 3 作者
(191) Zero-bias high-responsivity high-bandwidth top-illuminated germanium p-i-n photodetectors, CHINESE PHYSICS B, 2014, 通讯作者
(192) Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature, CHINESE PHYSICS B, 2014, 第 5 作者
(193) Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration, PHYSICA B-CONDENSED MATTER, 2014, 第 3 作者
(194) Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance, NANOSCALE RESEARCH LETTERS, 2014, 第 8 作者
(195) Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate, APPLIED PHYSICS LETTERS, 2014, 第 5 作者
(196) Si基IV族光电器件的研究进展(一)—激光器, Progress in Study of Si-Based Group IV Optoelectronic Devices(Ⅰ)——Lasers, 激光与光电子学进展, 2014, 第 5 作者
(197) Crystal Quality Improvement of GeSn Alloys by Thermal Annealing, ECS SOLID STATE LETTERS, 2014, 第 6 作者
(198) Compact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides, OPTICS EXPRESS, 2014, 第 5 作者
(199) Ag-assisted lateral etching of Si nanowires and its application to nanowire transfer, APPLIED PHYSICS LETTERS, 2013, 第 4 作者
(200) Growth of Ge1−xSnx/Ge strained-layer superlattices on Si(1 0 0) by molecular beam epitaxy, SUPERLATTICES AND MICROSTRUCTURES, 2013, 第 4 作者
(201) Ge-Si quantum dots thin film solar cells, APPLIED PHYSICS LETTERS, 2013, 第 7 作者
(202) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 3 作者
(203) High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 第 2 作者
(204) High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者
(205) 1×16 Ge-on-SOI PIN Photo-detector Array for Parallel Optical Interconnects, Chin. Phys. B, 2013, 通讯作者
(206) Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 第 9 作者
(207) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 3 作者
(208) Enhanced photoluminescence from porous silicon nanowire arrays, NANOSCALE RESEARCH LETTERS, 2013, 第 5 作者
(209) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 3 作者
(210) Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer, Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer, CHINESE PHYSICS LETTERS, 2013, 第 5 作者
(211) Si基Ge异质结构发光器件的研究进展, Progress in Ge/Si heterostructures for light emitters, 中国光学, 2013, 第 3 作者
(212) Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth, JOURNAL OF APPLIED PHYSICS, 2013, 第 5 作者
(213) Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation, IEEE ELECTRON DEVICE LETTERS, 2013, 第 10 作者
(214) High-responsivity GeSn short-wave infrared p-i-n photodetectors, APPLIED PHYSICS LETTERS, 2013, 通讯作者
(215) High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector, CHINESE PHYSICS B, 2013, 通讯作者
(216) Impact of ammonia on the electrical properties of p-type Si nanowire arrays, JOURNAL OF APPLIED PHYSICS, 2013, 第 5 作者
(217) Texture Evolution and Grain Competition in NiGe Film on Ge(001), APPLIED PHYSICS EXPRESS, 2013, 第 7 作者
(218) High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者
(219) Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate, CHINESE PHYSICS B, 2013, 第 5 作者
(220) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 3 作者
(221) Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation, SOLID-STATE ELECTRONICS, 2013, 第 8 作者
(222) Ag-assisted lateral etching of Si nanowires and its application to nanowire transfer, APPLIED PHYSICS LETTERS, 2013, 第 4 作者
(223) Growth of Ge1−xSnx/Ge strained-layer superlattices on Si(1 0 0) by molecular beam epitaxy, SUPERLATTICES AND MICROSTRUCTURES, 2013, 第 4 作者
(224) Ge-Si quantum dots thin film solar cells, APPLIED PHYSICS LETTERS, 2013, 第 7 作者
(225) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 3 作者
(226) High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 第 2 作者
(227) High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者
(228) 1×16 Ge-on-SOI PIN Photo-detector Array for Parallel Optical Interconnects, Chin. Phys. B, 2013, 通讯作者
(229) Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 第 9 作者
(230) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 3 作者
(231) Enhanced photoluminescence from porous silicon nanowire arrays, NANOSCALE RESEARCH LETTERS, 2013, 第 5 作者
(232) Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate, ACTA PHYSICA SINICA, 2013, 第 3 作者
(233) Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer, Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer, CHINESE PHYSICS LETTERS, 2013, 第 5 作者
(234) Si基Ge异质结构发光器件的研究进展, Progress in Ge/Si heterostructures for light emitters, 中国光学, 2013, 第 3 作者
(235) Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth, JOURNAL OF APPLIED PHYSICS, 2013, 第 5 作者
(236) Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation, IEEE ELECTRON DEVICE LETTERS, 2013, 第 10 作者
(237) High-responsivity GeSn short-wave infrared p-i-n photodetectors, APPLIED PHYSICS LETTERS, 2013, 通讯作者
(238) High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector, CHINESE PHYSICS B, 2013, 通讯作者
(239) Impact of ammonia on the electrical properties of p-type Si nanowire arrays, JOURNAL OF APPLIED PHYSICS, 2013, 第 5 作者
(240) Texture Evolution and Grain Competition in NiGe Film on Ge(001), APPLIED PHYSICS EXPRESS, 2013, 第 7 作者
(241) High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy, ACTA PHYSICA SINICA, 2013, 第 4 作者
(242) Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate, CHINESE PHYSICS B, 2013, 第 5 作者
(243) Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect, ACTA PHYSICA SINICA, 2013, 第 3 作者
(244) Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation, SOLID-STATE ELECTRONICS, 2013, 第 8 作者
(245) Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon, Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon, 中国物理:英文版, 2012, 第 3 作者
(246) Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping, OPTICS EXPRESS, 2012, 第 6 作者
(247) Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs, ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 其他(合作组作者)
(248) Lattice constant deviation from Vegard, Acta physica sinica, 2012, 
(249) High Hole Mobility in Strained Germanium-Tin (GeSn) Channel pMOSFET Fabricated on (111) Substrate, SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 第 10 作者
(250) Enhanced Current Transportation in Silicon-riched Nitride (SRN)/Silicon-riched Oxide (SRO) Multilayer Nanostructure, NANO-MICRO LETTERS, 2012, 第 4 作者
(251) Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells, APPLIED PHYSICS LETTERS, 2012, 第 5 作者
(252) High-speed and high-power uni-traveling-carrier photodetector, ACTA PHYSICA SINICA, 2012, 第 4 作者
(253) Ge-on-Si for Si-based integrated materials and photonic devices, FRONTIERS OF OPTOELECTRONICS, 2012, 第 3 作者
(254) Towards Direct Band-to-Band Tunneling in P-Channel Tunneling Field Effect Transistor (TFET): Technology Enablement by Germanium-Tin (GeSn), 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2012, 第 9 作者
(255) Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer, Digest of technical papers - symposium on vlsi technology, 2012, 第 5 作者
(256) Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal, IEEE ELECTRON DEVICE LETTERS, 2012, 第 10 作者
(257) Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor, International symposium on vlsi technology, systems, and applications, proceedings, 2012, 其他(合作组作者)
(258) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, Chinese Physics B, 2012, 第 4 作者
(259) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, CHINESE PHYSICS B, 2012, 第 4 作者
(260) Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon, Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon, 中国物理:英文版, 2012, 第 3 作者
(261) Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping, OPTICS EXPRESS, 2012, 第 6 作者
(262) Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs, ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 其他(合作组作者)
(263) Lattice constant deviation from Vegard, Acta physica sinica, 2012, 
(264) High Hole Mobility in Strained Germanium-Tin (GeSn) Channel pMOSFET Fabricated on (111) Substrate, SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 第 10 作者
(265) Enhanced Current Transportation in Silicon-riched Nitride (SRN)/Silicon-riched Oxide (SRO) Multilayer Nanostructure, NANO-MICRO LETTERS, 2012, 第 4 作者
(266) Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells, APPLIED PHYSICS LETTERS, 2012, 第 5 作者
(267) High-speed and high-power uni-traveling-carrier photodetector, ACTA PHYSICA SINICA, 2012, 第 4 作者
(268) Ge-on-Si for Si-based integrated materials and photonic devices, FRONTIERS OF OPTOELECTRONICS, 2012, 第 3 作者
(269) Towards Direct Band-to-Band Tunneling in P-Channel Tunneling Field Effect Transistor (TFET): Technology Enablement by Germanium-Tin (GeSn), 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2012, 第 9 作者
(270) Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer, Digest of technical papers - symposium on vlsi technology, 2012, 第 5 作者
(271) Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal, IEEE ELECTRON DEVICE LETTERS, 2012, 第 10 作者
(272) Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor, International symposium on vlsi technology, systems, and applications, proceedings, 2012, 其他(合作组作者)
(273) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, Chinese Physics B, 2012, 第 4 作者
(274) Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures, CHINESE PHYSICS B, 2012, 第 4 作者
(275) Highly efficient 1.53 mu m luminescence in erxyb2-xsi2o7 thin films grown on si substrate, MATERIALS LETTERS, 2011, 第 6 作者
(276) Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material, CHINESE PHYSICS B, 2011, 第 5 作者
(277) Formation of rippled surface morphology during si/si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, CHINESE PHYSICS B, 2011, 第 3 作者
(278) Detailed balance limit efficiency of silicon intermediate band solar cells, CHINESE PHYSICS B, 2011, 第 3 作者
(279) InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, 中国物理:英文版, 2011, 第 6 作者
(280) Uneven splitting-ratio 1x2 multimode interference splitters based on silicon wire waveguides, CHINESE OPTICS LETTERS, 2011, 第 7 作者
(281) Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 6 作者
(282) Detailed balance limit efficiency of silicon intermediate band solar cells, Detailed balance limit efficiency of silicon intermediate band solar cells, 中国物理:英文版, 2011, 第 3 作者
(283) Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As, Ieee international conference on group iv photonics gfp, 2011, 第 3 作者
(284) Uneven splitting-ratio 1×2 multimode interference splitters based on silicon wire waveguides, Chinese optics letters, 2011, 第 7 作者
(285) UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation, Ieee international conference on group iv photonics gfp, 2011, 第 3 作者
(286) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, CHINESE PHYSICS B, 2011, 第 5 作者
(287) Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology, IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 第 4 作者
(288) Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, 中国物理:英文版, 2011, 第 3 作者
(289) The contributions of composition and strain to the phonon shift in ge1-xsnx alloys, SOLID STATE COMMUNICATIONS, 2011, 第 6 作者
(290) Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, CHINESE PHYSICS LETTERS, 2011, 第 3 作者
(291) Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜, Epitaxial growth of Ge_(0.975)Sn_(0.025) alloy films on Si(001) substrates by molecular beam epitaxy, 物理学报, 2011, 第 6 作者
(292) Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing, APPLIED SURFACE SCIENCE, 2011, 第 5 作者
(293) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, 中国物理:英文版, 2011, 第 5 作者
(294) Gesn p-i-n photodetector for all telecommunication bands detection, OPTICS EXPRESS, 2011, 第 3 作者
(295) Inp-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, CHINESE PHYSICS B, 2011, 第 6 作者
(296) Uneven splitting-ratio lx2 multimode interference splitters based on silicon wire waveguides, Uneven splitting-ratio lx2 multimode interference splitters based on silicon wire waveguides, 中国光学快报:英文版, 2011, 第 7 作者
(297) Highly efficient 1.53 mu m luminescence in erxyb2-xsi2o7 thin films grown on si substrate, MATERIALS LETTERS, 2011, 第 6 作者
(298) Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material, CHINESE PHYSICS B, 2011, 第 5 作者
(299) Formation of rippled surface morphology during si/si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, CHINESE PHYSICS B, 2011, 第 3 作者
(300) Detailed balance limit efficiency of silicon intermediate band solar cells, CHINESE PHYSICS B, 2011, 第 3 作者
(301) InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, 中国物理:英文版, 2011, 第 6 作者
(302) Uneven splitting-ratio 1x2 multimode interference splitters based on silicon wire waveguides, CHINESE OPTICS LETTERS, 2011, 第 7 作者
(303) Epitaxial growth and thermal stability of ge(1-x)sn(x) alloys on ge-buffered si(001) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 6 作者
(304) Detailed balance limit efficiency of silicon intermediate band solar cells, Detailed balance limit efficiency of silicon intermediate band solar cells, 中国物理:英文版, 2011, 第 3 作者
(305) Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As, Ieee international conference on group iv photonics gfp, 2011, 第 3 作者
(306) Uneven splitting-ratio 1×2 multimode interference splitters based on silicon wire waveguides, Chinese optics letters, 2011, 第 7 作者
(307) UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation, Ieee international conference on group iv photonics gfp, 2011, 第 3 作者
(308) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, CHINESE PHYSICS B, 2011, 第 5 作者
(309) Wavelength-tunable si-based ingaas resonant cavity enhanced photodetectors using sol-gel wafer bonding technology, IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 第 4 作者
(310) Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition, 中国物理:英文版, 2011, 第 3 作者
(311) The contributions of composition and strain to the phonon shift in ge1-xsnx alloys, SOLID STATE COMMUNICATIONS, 2011, 第 6 作者
(312) Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators, CHINESE PHYSICS LETTERS, 2011, 第 3 作者
(313) Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜, Epitaxial growth of Ge_(0.975)Sn_(0.025) alloy films on Si(001) substrates by molecular beam epitaxy, 物理学报, 2011, 第 6 作者
(314) Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing, APPLIED SURFACE SCIENCE, 2011, 第 5 作者
(315) Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature, 中国物理:英文版, 2011, 第 5 作者
(316) Gesn p-i-n photodetector for all telecommunication bands detection, OPTICS EXPRESS, 2011, 第 3 作者
(317) Inp-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm, CHINESE PHYSICS B, 2011, 第 6 作者
(318) Uneven splitting-ratio lx2 multimode interference splitters based on silicon wire waveguides, Uneven splitting-ratio lx2 multimode interference splitters based on silicon wire waveguides, 中国光学快报:英文版, 2011, 第 7 作者
(319) 外延生长Gel-xSnx合金的研究进展, 材料导报, 2010, 第 5 作者
(320) 杂质带太阳能电池研究, Research on Impurity Band Photovoltaic Solar Cells, 中国集成电路, 2010, 第 2 作者
(321) 硅基室温电流注入Ge/Si异质结发光二极管, 激光与光电子学进展, 2010, 第 3 作者
(322) 外延生长Ge1-xSnx合金的研究进展, Progress in the Epitaxy Growth of Ge1-xSnx Alloy, 材料导报, 2010, 第 5 作者
(323) Fabrication of silicon-based template-assisted nanoelectrode arrays and ohmic contact properties investigation, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 第 4 作者
(324) 外延生长Gel-xSnx合金的研究进展, 材料导报, 2010, 第 5 作者
(325) 杂质带太阳能电池研究, Research on Impurity Band Photovoltaic Solar Cells, 中国集成电路, 2010, 第 2 作者
(326) 硅基室温电流注入Ge/Si异质结发光二极管, 激光与光电子学进展, 2010, 第 3 作者
(327) 外延生长Ge1-xSnx合金的研究进展, Progress in the Epitaxy Growth of Ge1-xSnx Alloy, 材料导报, 2010, 第 5 作者
(328) Fabrication of silicon-based template-assisted nanoelectrode arrays and ohmic contact properties investigation, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 第 4 作者
(329) Zero biased Ge-on-Si a bandwidth of 4.72 photodetector with GHz at 1550 nm, Zero biased Ge-on-Si a bandwidth of 4.72 photodetector with GHz at 1550 nm, 中国物理:英文版, 2009, 第 2 作者
(330) 1 x 4 ge-on-soi pin photodetector array for parallel optical interconnects, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2009, 通讯作者
(331) Si衬底上Ge材料的UHVCVD生长, Growth of Ge on Silicon by Ultrahigh Vacuum Chemical Vapor Deposition, 材料科学与工程学报, 2009, 第 2 作者
(332) Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm, CHINESE PHYSICS B, 2009, 第 2 作者
(333) Electroluminescence from Ge on Si substrate at room temperature, APPLIED PHYSICS LETTERS, 2009, 第 3 作者
(334) Zero biased Ge-on-Si a bandwidth of 4.72 photodetector with GHz at 1550 nm, Zero biased Ge-on-Si a bandwidth of 4.72 photodetector with GHz at 1550 nm, 中国物理:英文版, 2009, 第 2 作者
(335) 1 x 4 ge-on-soi pin photodetector array for parallel optical interconnects, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2009, 通讯作者
(336) Si衬底上Ge材料的UHVCVD生长, Growth of Ge on Silicon by Ultrahigh Vacuum Chemical Vapor Deposition, 材料科学与工程学报, 2009, 第 2 作者
(337) Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm, CHINESE PHYSICS B, 2009, 第 2 作者
(338) Electroluminescence from Ge on Si substrate at room temperature, APPLIED PHYSICS LETTERS, 2009, 第 3 作者
(339) DCXRD分析Ge/Si(001)多层纳米岛材料, DCXRD Investigation of a Ge/Si(001)Island Multilayer Structure, 中国科技信息, 2008, 第 2 作者
(340) DCXRD分析Ge/Si(001)多层纳米岛材料, DCXRD Investigation of a Ge/Si(001)Island Multilayer Structure, 中国科技信息, 2008, 第 2 作者
(341) Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, CHINESE PHYSICS LETTERS, 2007, 第 2 作者
(342) SOI衬底和n~+衬底上SiGe HBT的研制, The Fabrication of SiGe HBT on SOI and n~+-Si Substrate, 电子器件, 2007, 第 2 作者
(343) SOI衬底和n~+衬底上SiGe HBT的研制, The Fabrication of SiGe HBT on SOI and n~+-Si Substrate, 多媒体世界, 2007, 第 2 作者
(344) 重掺B对应变SiGe材料能带结构的影响, Band gap Narrowing in heavily B doped Si1-xGex strained layers, 物理学报, 2007, 第 2 作者
(345) 基于无线功率放大器应用的多指结构SiGe HBT, A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2007, 第 1 作者
(346) 应用于WLAN的SiGe HBT高频功率特性的优化, Analysis and Optimization of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Local Area Network Applications, 半导体学报, 2007, 第 1 作者
(347) 基于无线功率放大器应用的多指结构SiGe HBT, A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2007, 第 1 作者
(348) DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure, 半导体学报, 2007, 第 2 作者
(349) SiGe/Si 射频功率HBT 器件的研制, 2007, 第 1 作者
(350) DCXRD分析Ge/Si(001)多层纳米岛材料, DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure, 半导体学报, 2007, 第 2 作者
(351) Band gap narrowing in heavily B doped Si1-xGex strained layers, ACTA PHYSICA SINICA, 2007, 第 2 作者
(352) A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor, A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor, 中国物理快报:英文版, 2007, 第 1 作者
(353) Effect of heavy boron doping on the electrical characteristics of SiGeHBTs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 第 2 作者
(354) Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, 中国物理快报:英文版, 2007, 第 2 作者
(355) Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, CHINESE PHYSICS LETTERS, 2007, 第 2 作者
(356) SOI衬底和n~+衬底上SiGe HBT的研制, The Fabrication of SiGe HBT on SOI and n~+-Si Substrate, 电子器件, 2007, 第 2 作者
(357) SOI衬底和n~+衬底上SiGe HBT的研制, The Fabrication of SiGe HBT on SOI and n~+-Si Substrate, 多媒体世界, 2007, 第 2 作者
(358) 重掺B对应变SiGe材料能带结构的影响, Band gap Narrowing in heavily B doped Si1-xGex strained layers, 物理学报, 2007, 第 2 作者
(359) 基于无线功率放大器应用的多指结构SiGe HBT, A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2007, 第 1 作者
(360) 应用于WLAN的SiGe HBT高频功率特性的优化, Analysis and Optimization of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Local Area Network Applications, 半导体学报, 2007, 第 1 作者
(361) 基于无线功率放大器应用的多指结构SiGe HBT, A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2007, 第 1 作者
(362) DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure, 半导体学报, 2007, 第 2 作者
(363) SiGe/Si 射频功率HBT 器件的研制, 2007, 第 1 作者
(364) DCXRD分析Ge/Si(001)多层纳米岛材料, DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure, 半导体学报, 2007, 第 2 作者
(365) Band gap narrowing in heavily B doped Si1-xGex strained layers, ACTA PHYSICA SINICA, 2007, 第 2 作者
(366) A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor, A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor, 中国物理快报:英文版, 2007, 第 1 作者
(367) Effect of heavy boron doping on the electrical characteristics of SiGeHBTs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 第 2 作者
(368) Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers, 中国物理快报:英文版, 2007, 第 2 作者
(369) Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate, 半导体学报, 2006, 第 1 作者
(370) 硅基螺旋电感的几何参数设计和优化, Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate, 半导体学报, 2006, 第 1 作者
(371) Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2006, 第 1 作者
(372) 用于无线PA的高频大功率Si1-xGex/Si HBT的设计和制作, Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2006, 第 1 作者
(373) 高频大功率SiGe/SiHBT的设计, Design of High Power High Frequency SiGe/Si HBT, 半导体光电, 2006, 第 1 作者
(374) 衬底结构特征对硅基螺旋电感性能的影响, 半导体学报, 2006, 第 1 作者
(375) Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate, 半导体学报, 2006, 第 1 作者
(376) 硅基螺旋电感的几何参数设计和优化, Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate, 半导体学报, 2006, 第 1 作者
(377) Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2006, 第 1 作者
(378) 用于无线PA的高频大功率Si1-xGex/Si HBT的设计和制作, Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications, 半导体学报, 2006, 第 1 作者
(379) 高频大功率SiGe/SiHBT的设计, Design of High Power High Frequency SiGe/Si HBT, 半导体光电, 2006, 第 1 作者
(380) 衬底结构特征对硅基螺旋电感性能的影响, 半导体学报, 2006, 第 1 作者
(381) 过腐蚀自对准离子注入法制备SiGe HBT, Over Wet-Etching Self-Aligned Ion Implantation Doping Technology on Fabricating SiGe/Si HBT, 半导体学报, 2005, 第 3 作者
(382) B在SiGe中的应变补偿作用, Strain Compensation in SiGe by Boron Doping, 半导体学报, 2005, 第 3 作者
(383) 带隙法测定SiGe/Si材料的应变状态, A method to estimate the strain state of SiGe/Si by measuring the bandgap, 物理学报, 2005, 第 3 作者
(384) 带胶剥离工艺粘附性实验研究, An Experimental Study on Adhesion in Lift-Off Technique, 微电子学, 2005, 第 2 作者
(385) 过腐蚀自对准离子注入法制备SiGe HBT, Over Wet-Etching Self-Aligned Ion Implantation Doping Technology on Fabricating SiGe/Si HBT, 半导体学报, 2005, 第 3 作者
(386) B在SiGe中的应变补偿作用, Strain Compensation in SiGe by Boron Doping, 半导体学报, 2005, 第 3 作者
(387) 带隙法测定SiGe/Si材料的应变状态, A method to estimate the strain state of SiGe/Si by measuring the bandgap, 物理学报, 2005, 第 3 作者
(388) 带胶剥离工艺粘附性实验研究, An Experimental Study on Adhesion in Lift-Off Technique, 微电子学, 2005, 第 2 作者
(389) 高频大功率Si1-xGex/Si HBT研究进展, Development of high frequency high power Si1-xGex/Si HBT, 微纳电子技术, 2004, 第 1 作者
(390) 高频大功率Si1-xGex/Si HBT研究进展, Development of high frequency high power Si1-xGex/Si HBT, 微纳电子技术, 2004, 第 1 作者

科研活动

   
科研项目
( 1 ) 硅基能带调控发光材料与激光器件, 负责人, 国家任务, 2013-01--2017-12
( 2 ) 硅基Ⅳ族材料红外光子学探测器件的基础研究, 负责人, 国家任务, 2012-01--2015-12
( 3 ) Si/Ge长波长单光子探测器基础研究, 负责人, 国家任务, 2010-01--2012-12
( 4 ) 硅基Ⅳ族合金材料能带调控机制与双异质结激光器的构建, 负责人, 国家任务, 2014-01--2017-12
( 5 ) 硅基锗锡多量子阱材料制备及发光特性研究, 负责人, 国家任务, 2017-01--2020-12
( 6 ) 单细胞蛋白定量分析及肿瘤研究中的应用创新交叉团队, 负责人, 中国科学院计划, 2018-01--2020-12
( 7 ) 硅基短波红外雪崩光电探测器及其阵列的基础研究, 负责人, 国家任务, 2019-01--2022-12
( 8 ) 光子集成芯片智能化耦合封测设备, 负责人, 中国科学院计划, 2019-01--2020-12
( 9 ) 面向单片集成的硅基短波红外成像新技术研究, 负责人, 中国科学院计划, 2019-09--2024-08
( 10 ) 硅基光电子材料与器件, 负责人, 国家任务, 2022-01--2026-12
( 11 ) 中国科学院稳定支持基础研究领域青年团队计划, 负责人, 中国科学院计划, 2022-07--2027-07
( 12 ) 面向高性能计算应用的超高带宽光收发芯片及模块, 负责人, 国家任务, 2022-07--2025-06