基本信息
王晓亮  男  博导  中国科学院半导体研究所
email: xlwang@red.semi.ac.cn
address: 北京海淀清华东路甲35号
postalCode: 100083

招生信息

   
招生专业
080903-微电子学与固体电子学
080501-材料物理与化学
0805Z2-半导体材料与器件
招生方向
宽禁带半导体信息功能材料的外延生长、物理及器件制备
MOCVD材料生长关键设备研制,GaN基电力电子器件
半导体材料与器件

教育背景

1992-03--1995-10   中科院西安光机所、中科院半导体所   博士
1987-07--1990-07   西北大学、中科院西安光机所   硕士
1980-09--1984-07   西北大学   本科

工作经历

   
工作简历
2001-09~现在, 中科院半导体所, 研究员
1997-06~2001-09,中科院半导体研究所, 副研究员
1996-01~1998-01,中科院半导体所, 博士后
1992-03~1995-10,中科院西安光机所、中科院半导体所, 博士
1987-07~1990-07,西北大学、中科院西安光机所, 硕士
1984-07~1995-12,西北大学, 讲师
1980-09~1984-07,西北大学, 本科
社会兼职
2015-09-01-今,山东大学“功能晶体及器件教育部重点实验室”学术委员会, 委员
2014-05-26-今,国家安全重大基础研究“石墨烯晶片级材料与毫米波器件基础研究”项目专家组, 专家
2011-01-01-今,中国科学院“北京地区机加工技术服务中心”管理委员会, 委员
2010-01-01-今,中国科学院创新科学仪器研制技术服务中心管理委员会, 委员
2010-01-01-今,西安交通大学“腾飞人才计划”特聘教授, 教授
2009-12-31-今,工信部国防科技奖评审专家委员会, 专家
2007-06-14-今,西安交通大学“电子物理与器件教育部重点实验室”学术会员会, 委员
2007-01-01-今,全国半导体设备和材料标准化委员会材料分技术委员会, 委员
2006-01-01-今,中国电子学会半导体集成技术分会, 秘书长
2006-01-01-今,中国电子学会, 理事
2002-06-27-今,西安交通大学, 兼职教授

教授课程

宽禁带半导体电子器件
半导体异质结构材料与应用
宽禁带半导体电子器件(中国科学院大学、首席教授)
半导体物理与器件
半导体工艺
宽禁带电力电子器件
宽禁带半导体材料与器件

专利与奖励

   
奖励信息
(1) 新一代xxxx, 一等奖, 国家级, 2019
(2) 工信部科学技术进步奖, 一等奖, 部委级, 2017
(3) 北京市科学技术奖, 二等奖, 省级, 2012
(4) 全国优秀科技工作者, , 部委级, 2012
(5) 工信部科学技术成果奖, 一等奖, 部委级, 2009
(6) 中国科学院预先研究先进个人, , 部委级, 2006
专利成果
( 1 ) 抑制GaN衬底在外延生长过程中背面分解的方法, 2020, 第 1 作者, 专利号: 202010288020.9

( 2 ) 阶梯型混合栅p-GaN氮化镓基晶体管结构及制作方法, 2020, 第 1 作者, 专利号: 202010252675.0

( 3 ) 晶圆的室温等静压金属键合方法, 2020, 第 1 作者, 专利号: 202010204986.X

( 4 ) 混合栅p-GaN增强型氮化镓基晶体管结构及制作方法, 2020, 第 1 作者, 专利号: 202010198618.9

( 5 ) MOFET器件, 2019, 第 1 作者, 专利号: 201910175096.8

( 6 ) 一种基于电磁感应的加热装置, 2017, 第 1 作者, 专利号: 201710738799.8

( 7 ) 一种用于薄膜材料生长的感应加热装置, 2017, 第 1 作者, 专利号: 201710728514.2

( 8 ) 一种用于薄膜材料生长设备加热托盘的固定控制装置, 2017, 第 1 作者, 专利号: 201710728515.7

( 9 ) 纵向调制掺杂氮化镓基场效应晶体管结构及其制作方法, 2016, 第 1 作者, 专利号: 201611255799.4

( 10 ) 铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法, 2015, 第 1 作者, 专利号: ZL201210467084.0

( 11 ) 用于金属有机化合物化学气相沉积设备反应室的进气顶盘, 2015, 第 1 作者, 专利号: 201510002676.9

( 12 ) 具有复合空间层的氮化镓场效应晶体管结构及制作方法, 2013, 第 2 作者, 专利号: 201310054863.2

( 13 ) 用于金属有机物化学沉积设备的衬托盘及其制作工艺, 2012, 第 2 作者, 专利号: ZL201010033965.2

( 14 ) 双异质结构氮化镓基高电子迁移率晶体管结构及制作方法, 2012, 第 1 作者, 专利号: 201210348006.9

( 15 ) Ⅲ-氮化物半导体材料pn结的制作方法, 2012, 第 2 作者, 专利号: ZL200910236706.7

( 16 ) 用于金属有机物化学沉积设备的气路装置, 2012, 第 2 作者, 专利号: ZL201010033967.1

( 17 ) p-i-n型InGaN量子点太阳能电池结构及其制作方法, 2012, 第 2 作者, 专利号: ZL200810240351.4

( 18 ) 氮化镓基高电子迁移率晶体管及制作方法, 2011, 第 1 作者, 专利号: 201110401468.8

( 19 ) 金属有机物化学沉积设备的反应室, 2011, 第 2 作者, 专利号: ZL201010033963.3

( 20 ) 一种制备稀磁半导体薄膜的方法, 2011, 第 1 作者, 专利号: ZL200710304215.2

( 21 ) 一种对气体传感器或半导体器件性能进行测试的系统, 2011, 第 1 作者, 专利号: ZL200610112883.0

( 22 ) 用于金属有机物化学沉积设备的气体分配装置, 2011, 第 1 作者, 专利号: ZL201010033962.9

( 23 ) 制备增强型铝镓氮/氮化镓高电子迁移率晶体管的方法发明, 2011, 第 1 作者, 专利号: ZL200810226288.9

出版信息

   
发表论文
(1) Effect of Double Insulators on the Performance Improvement of 3 MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 第 11 作者
(2) TiO2 insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT, JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 第 11 作者
(3) Optimization of Finite-Zone Implanted Edge Termination for beta-Ga2O3 SBD, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 第 11 作者
(4) Comparative Study on Characteristics of AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 第 11 作者
(5) A novel structure to enable low local electric field and high on-state current in GaN photoconductive semiconductor switches, OPTICS COMMUNICATIONS, 2021, 第 11 作者
(6) The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT, MICROMACHINES, 2021, 第 11 作者
(7) Simulation Study of Performance Degradation in ��-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling, Journal of Solid State Science and Technology, 2021, 第 9 作者
(8) Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs, Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs, 半导体学报:英文版, 2021, 第 8 作者
(9) Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 第 11 作者
(10) Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 第 11 作者
(11) A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications, ELECTRONICS, 2021, 第 11 作者
(12) Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 第 9 作者
(13) Room Temperature 2DEG Mobility Above 2350 cm(2)/V center dot s in AlGaN/GaN HEMT Grown on GaN Substrate, JOURNAL OF ELECTRONIC MATERIALS, 2021, 第 11 作者
(14) Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 第 9 作者
(15) Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*, CHINESE PHYSICS B, 2021, 第 8 作者
(16) Design and Fabrication of 4H-SiC MOSFETs with Optimized JFET and P-Body Design, Materials Science Forum, 2020, 第 11 作者
(17) Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 第 11 作者
(18) Comparative Study of SiC Planar MOSFETs With Different p-Body Designs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 第 11 作者
(19) Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 第 11 作者
(20) Theoretical Investigation on the Evolution of 2DEG for Design of E-Mode p-GaN HEMTs, IEEE Xplore Digital Library, 2020, 第 1 作者
(21) 1700V 34m Omega 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region, 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019, 第 2 作者
(22) Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET, IEEE ELECTRON DEVICE LETTERS, 2019, 第 11 作者
(23) Design and Fabrication of 3300V 100m Omega 4H-SiC MOSFET with Stepped p-body Structure, 2019 16TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2019 INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS), 2019, 第 11 作者
(24) Simulation and Optimization of Temperature Distribution in Induction Heating Reactor, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 11 作者
(25) Theoretical analysis of induction heating in high-temperature epitaxial growth system, AIP ADVANCES, 2018, 第 11 作者
(26) Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, CHINESE PHYSICS LETTERS, 2018, 第 11 作者
(27) Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 11 作者
(28) X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 11 作者
(29) Largely reduced cross-plane thermal conductivity of nanoporous In_(0.1)Ga_(0.9)N thin films directly grown by metal organic chemical vapor deposition, FRONTIERS IN ENERGY, 2018, 第 8 作者
(30) Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 11 作者
(31) Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer, NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 第 11 作者
(32) Hybrid Electrothermal Simulation of a 3-D Fin-Shaped Field-Effect Transistor Based on GaN Nanowires, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 第 5 作者
(33) Roles of polarization effects in InGaN/GaN solar cells and comparison of p-i-n and n-i-p structures, OPTICS EXPRESS, 2018, 第 11 作者
(34) Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, 中国物理快报:英文版, 2018, 第 8 作者
(35) Fast electrical detection of carcinoembryonic antigen (CEA) based on AlGaN/GaN high electron mobility transistor aptasensor, Chinese Physics Letters, 2017, 第 11 作者
(36) Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, 中国物理快报:英文版, 2017, 第 9 作者
(37) Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor, CHINESE PHYSICS LETTERS, 2017, 第 11 作者
(38) Developing a Wireless, High Precision and Processing Speed Pulse Monitoring Headset Using Photoplethysmography, IEEE JOURNAL OF TRANSLATIONAL ENGINEERING IN HEALTH AND MEDICINE-JTEHM, 2017, 第 3 作者
(39) Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, CHINESE PHYSICS LETTERS, 2017, 第 11 作者
(40) Fast Electrical Detection of Carcinoembryonic Antigen Based on A1GaN/GaN High Electron Mobility Transistor Aptasensor, Fast Electrical Detection of Carcinoembryonic Antigen Based on A1GaN/GaN High Electron Mobility Transistor Aptasensor, 中国物理快报:英文版, 2017, 第 9 作者
(41) Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 11 作者
(42) 基于云端的口袋式人体脉搏诊断仪, Pocket-type human pulse diagnostic instrument based on cloud, 电子测量技术, 2017, 第 4 作者
(43) Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases, JOURNAL OF APPLIED PHYSICS, 2016, 第 11 作者
(44) 一种使用MESFET管芯的功率放大器的设计, Design of a Power Amplifier Using MESFET Tube Core, 安徽电气工程职业技术学院学报, 2016, 第 3 作者
(45) Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer: Material Growth and Device Fabrication, Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer: Material Growth and Device Fabrication, CHINESE PHYSICS LETTERS, 2016, 第 6 作者
(46) Self-consistent simulation of two- dimensional electron gas characteristics of a novel (InxAl1-xN/AlN) MQWs/InN/GaN heterostructure, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 第 11 作者
(47) Comparison of GaN/AlGaN/AIN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer: Material Growth and Device Fabrication, CHINESE PHYSICS LETTERS, 2016, 第 6 作者
(48) U HF/SHF单片低噪声放大器的设计, Design of UHF/SHF Monolithic Low Noise Amplifier, 微电子学与计算机, 2016, 第 3 作者
(49) Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 第 11 作者
(50) InxGa1-xN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77%, InxGa1-xN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77%, 中国物理快报:英文版, 2015, 第 7 作者
(51) Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors, CHIN. PHYS. LETT., 2015, 第 3 作者
(52) Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors, CHINESE PHYSICS LETTERS, 2015, 第 11 作者
(53) A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor, CHIN. PHYS. LETT., 2015, 第 3 作者
(54) Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes, PHYS. STATUS SOLIDI A, 2015, 第 12 作者
(55) A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor, CHINESE PHYSICS LETTERS, 2015, 第 11 作者
(56) Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 第 11 作者
(57) Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/A1N/GaN Heterojunction Field Effect Transistors, CHINESE PHYSICS LETTERS, 2015, 第 3 作者
(58) InxGa1-xN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77%, CHIN. PHYS. LETT., 2015, 第 7 作者
(59) Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 第 2 作者
(60) Growth and characterization of InGaN back barrier HEMTs structure with a compositionally step-graded AlGaN layer, JOURNAL OF SEMICONDUCTORS, 2014, 第 2 作者
(61) AIGaN/AIN/GaN HEMT结构2DEG的光致发光谱, Photoluminescence of 2DEG in AlGaN/AlN/GaN HEMT Structures, 半导体技术, 2014, 第 2 作者
(62) Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 第 2 作者
(63) High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes, CHINESE PHYSICS LETTERS, 2014, 第 11 作者
(64) Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation, JOURNAL OF APPLIED PHYSICS, 2014, 第 11 作者
(65) Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor, JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 第 11 作者
(66) High performance AlGaN/GaN power switch with Si3N4 insulation, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 第 2 作者
(67) Persistent photoconductivity in neutron irradiated GaN, JOURNAL OF SEMICONDUCTORS, 2013, 第 4 作者
(68) Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers, JOURNAL OF CRYSTAL GROWTH, 2013, 第 11 作者
(69) Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width, JOURNAL OF APPLIED PHYSICS, 2013, 第 11 作者
(70) The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy, CHINESE PHYSICS LETTERS, 2013, 第 11 作者
(71) AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 第 2 作者
(72) Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors, JOURNAL OF SEMICONDUCTORS, 2013, 第 11 作者
(73) The Growth and Fabrication of InGaN_GaN Multi-Quantum Well Solar Cells on Si(111) Substrates, CHINESE PHYSICS LETTERS, 2013, 第 3 作者
(74) Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell, PHYSICA B-CONDENSED MATTER, 2013, 第 3 作者
(75) High performance AlGaNGaN power switch with Si3N4 Insulation, THE EUROPEAN PHYSICAL JOURNAL APPLIED PHYSICS, 2013, 第 2 作者
(76) Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier, APPLIED PHYSICS EXPRESS, 2013, 第 6 作者
(77) The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD, JOURNAL OF SEMICONDUCTORS, 2013, 第 3 作者
(78) Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer, JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 第 2 作者
(79) Raman study on dislocation in high Al content AlxGa1-xN, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2012, 
(80) A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures, APPLIED PHYSICS LETTERS, 2012, 第 2 作者
(81) Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures, JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 第 2 作者
(82) The influence of pressure on the growth of InAlN/AlN/GaN heterostructure, EPJ APPLIED PHYSICS, 2012, 
(83) Numerical optimization of carrier confinement characteristics in (AlxGa1���xN/AlN)SLs/GaN heterostructures, PHYSICA B: PHYSICS OF CONDENSED MATTER, 2012, 第 2 作者
(84) InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage*, InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage���, 中国物理:英文版, 2011, 第 2 作者
(85) Growth of gan film on si (111) substrate using aln sandwich structure as buffer, JOURNAL OF CRYSTAL GROWTH, 2011, 第 6 作者
(86) The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 第 2 作者
(87) Ingan/gan multiple quantum well solar cells with an enhanced open-circuit voltage, CHINESE PHYSICS B, 2011, 第 2 作者
(88) Comparison of as-grown and annealed gan/ingan:mg samples, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 第 2 作者
(89) Structures and optical characteristics of InGaN quantum dots grown by MBE, XIYOU JINSHU CAILIAO YU GONGCHENG/RARE METAL MATERIALS AND ENGINEERING, 2011, 第 3 作者
(90) Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation, Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation, 半导体学报, 2011, 第 3 作者
(91) Theoretical study on inxga1-xn/gan quantum dots solar cell, PHYSICABCONDENSEDMATTER, 2011, 第 2 作者
(92) Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation, Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation, 半导体学报, 2011, 第 3 作者
(93) Effect of aln buffer thickness on gan epilayer grown on si(1 1 1), MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2011, 第 2 作者
(94) 分子束外延生长InGaN量子点及其结构和光学特性, Structures and Optical Characteristics of InGaN Quantum Dots Grown by MBE, 稀有金属材料与工程, 2011, 第 3 作者
(95) Growth of 2 mu m crack-free gan on si(111) substrates by metal organic chemical vapor deposition, CHINESE PHYSICS LETTERS, 2011, 第 2 作者
(96) The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure, APPLIED PHYSICS A: MATERIALS SCIENCE AND PROCESSING, 2011, 第 2 作者
(97) Simulation of electrical properties of In_xAl_(1-x)N/AlN/GaN high electron mobility transistor structure, Simulation of electrical properties of In_xAl_(1-x)N/AlN/GaN high electron mobility transistor structure, 半导体学报, 2011, 第 2 作者
(98) Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer, JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467, 2011, 
(99) Growth of 2 pm Crack-Free GaN on Si(lll) Substrates by Metal Organic Chemical Vapor Deposition, CHINESE PHYSICS LETTERS, 2011, 第 2 作者
(100) Behavioural investigation of inn nanodots by surface topographies and phase images, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 第 2 作者
(101) Surface characterization of algan grown on si (111) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 2 作者
(102) High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system, High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system, 半导体学报, 2011, 第 2 作者
(103) Effect of high temperature algan buffer thickness on gan epilayer grown on si(111) substrates, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 第 2 作者
(104) Influence of electric field on persistent photoconductivity in unintentionally doped n-type gan, APPLIED PHYSICS LETTERS, 2011, 第 2 作者
(105) An investigation on inxga1-xn/gan multiple quantum well solar cells, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 第 2 作者
(106) High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system, High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system, JOURNAL OF SEMICONDUCTORS, 2011, 第 2 作者
(107) Characteristics of high al content algan grown by pulsed atomic layer epitaxy, APPLIED SURFACE SCIENCE, 2011, 第 2 作者
(108) Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell, Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell, 中国物理快报英文版, 2011, 第 2 作者
(109) Computational investigation of inxga1-xn/inn quantum-dot intermediate-band solar cell, CHINESE PHYSICS LETTERS, 2011, 第 2 作者
(110) Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate, 3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: ART. NO. 012094 2011, 2011, 
(111) 高击穿电压AlGaN/GaN HEMT电力开关器件研究进展, Development of High Breakdown Voltage AlGaN/GaN HEMT for Power Switching Device, 半导体技术, 2010, 第 3 作者
(112) Variation of optical quenching of photoconductivity with resistivity in unintentional doped gan, CHINESE PHYSICS LETTERS, 2010, 第 2 作者
(113) AlGaN/GaN HEMT中电场分布的ATLAS模拟, ATLAS Simulation on Electrical Field Distribution of AIGaN/GaN HEMT, 半导体技术, 2010, 第 2 作者
(114) T-ZnOw高分子复合材料逾渗行为的模拟与研究, Simulation and Research of Percolation Phenomenon in T-ZnOw Polymer Composites, 材料导报:纳米与新材料专辑, 2010, 第 2 作者
(115) Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN, Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN, 中国物理快报:英文版, 2010, 第 2 作者
(116) Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite, Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite, 半导体学报, 2010, 第 2 作者
(117) Theoretical investigation of efficiency of a p-a-SiC :H/i-a-Si:H/n-μc-Si solar cell, Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-��c-Si solar cell, 半导体学报, 2010, 第 2 作者
(118) T-ZnOw高分子复合材料逾渗行为的模拟与研究, Simulation and Research of Percolation Phenomenon in T-ZnOw Polymer Composites, 材料导报, 2010, 第 2 作者
(119) Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite, Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite, JOURNAL OF SEMICONDUCTORS, 2010, 第 2 作者
(120) MOCVD生长Al_(0.48)Gao_(0.52)N/Al_(0.54)Ga_(0.36)N多量子阱的结构和光学特性, 光电子·激光, 2009, 第 6 作者
(121) Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 第 4 作者
(122) Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure, Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure, CHINESE PHYSICS LETTERS, 2009, 第 2 作者
(123) 射频分子束外延生长AlInGaN四元合金, Epitaxial Growth of AIInGaN Quaternary Alloys by RF-MBE, 无机材料学报, 2009, 第 2 作者
(124) Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure, Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure, 中国物理快报:英文版, 2009, 第 2 作者
(125) An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application, SOLID-STATE ELECTRONICS, 2009, 
(126) 以金属为缓冲层在Si(111)上分子束外延GaN及其表征, Effect of a Metal Buffer Layer on GaN Grown on Si(lll) by Gas Source Molecular Beam Epitaxy with Ammonia, 半导体学报, 2008, 第 3 作者
(127) Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures, Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures, 中国物理快报:英文版, 2008, 第 2 作者
(128) MOCVD生长GaN的数值模拟和喷淋式反应室结构优化, 半导体技术, 2008, 第 2 作者
(129) Growth temperature dependences of inn films grown by mocvd, APPLIED SURFACE SCIENCE, 2008, 第 2 作者
(130) High-performance 2 mm gate width ganhemts on 6h-sic with output power of 22.4 w @ 8 ghz, SOLID-STATE ELECTRONICS, 2008, 
(131) SiC衬底GaN基HEMT结构材料与器件, 半导体技术, 2008, 第 1 作者
(132) Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures, CHINESE PHYSICS LETTERS, 2008, 第 2 作者
(133) Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, 中国物理快报:英文版, 2008, 第 2 作者
(134) Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, 中国物理快报:英文版, 2008, 第 8 作者
(135) AlGaN/GaN背对背肖特基二极管氢气传感器, Hydrogen Sensors Based on AIGaN/GaN Back-to-Back Schottky Diodes, 半导体学报, 2008, 第 2 作者
(136) A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design, 半导体学报, 2008, 第 6 作者
(137) The effect of low temperature aln interlayers on the growth of gan epilayer on si (111) by mocvd, SUPERLATTICES AND MICROSTRUCTURES, 2008, 第 2 作者
(138) HVPE气相外延法在c面蓝宝石上选区外延生长GaN及其表征, Selective Area Growth and Characterization of GaN Grown on c-Sapphire by Hydride Vapor Phase Epitaxy, 半导体学报, 2008, 第 8 作者
(139) Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD, MICROELECTRONICS JOURNAL, 2008, 第 2 作者
(140) AlGaN/AlN_a/GaN/AlN_b/GaN HEMT结构材料生长及性能表征, 半导体技术, 2008, 第 2 作者
(141) Effect of CO on Characteristics of AlGaN/GaN Schottky Diode, Effect of CO on Characteristics of AlGaN/GaN Schottky Diode, 中国物理快报:英文版, 2008, 第 2 作者
(142) T-ZnOw的制备及其吸波特性研究进展, 半导体技术, 2008, 第 2 作者
(143) Influence of A1N Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia, Influence of A1N Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia, 中国物理快报:英文版, 2008, 第 3 作者
(144) AlGaN/GaN型气敏传感器对于C0的响应研究, 半导体学报, 2008, 第 2 作者
(145) AlGaN/GaN型气敏传感器对于CO的响应研究, A Carbon Monoxide Gas Sensor Based on an AlGaN/GaN Structure, 半导体学报, 2008, 第 2 作者
(146) Influence of aln buffer layer thickness on the properties of gan epilayer on si(111) by mocvd, MICROELECTRONICS JOURNAL, 2008, 第 2 作者
(147) Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes, CHINESE PHYSICS LETTERS, 2008, 第 2 作者
(148) AlGaN/GaN异质结气体传感器对低体积分数CO的响应研究, 半导体技术, 2008, 第 2 作者
(149) 过渡族和稀土族元素掺杂GaN基稀磁半导体性能比较, 半导体技术, 2008, 第 2 作者
(150) Theoretical design and performance of inxga1-xn two-junction solar cells, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 第 2 作者
(151) The influence of 1 nm aln interlayer on properties of the al0.3ga0.7n/aln/gan hemt structure, MICROELECTRONICSJOURNAL, 2008, 第 2 作者
(152) Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia, CHINESE PHYSICS LETTERS, 2008, 第 3 作者
(153) Photovoltaic effects in ingan structures with p-n junctions, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 第 2 作者
(154) Mocvd-grown high-mobility al0.3ga0.7n/aln/gan hemt structure on sapphire substrate, JOURNAL OF CRYSTAL GROWTH, 2007, 第 11 作者
(155) 微波功率器件的滤波器测试电路, A Test Circuit with Microstrip Filter for Microwave Power Device, 半导体学报, 2007, 第 8 作者
(156) AlGaN/AlN/GaN肖特基二极管的电学性能, Electrical Characteristic of AlGaN/AlN/GaN Schottky Diode, 半导体学报, 2007, 第 2 作者
(157) 基于AlGaN/GaN HEMT的C波段混合集成功率合成放大器的设计, AlIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band, 半导体学报, 2007, 第 8 作者
(158) 蓝宝石衬底上单晶InN薄膜的MOCVD生长, MOCVD Growth of InN Films on Sapphire Substrates, 半导体学报, 2007, 第 2 作者
(159) 采用AlN缓冲层在Si(111)衬底上生长GaN的形貌, Morphology of GaN Film on Si(111)Substrate Using AlN Buffer, 半导体学报, 2007, 第 2 作者
(160) 高阻GaN薄膜电阻率测量, Resistivity Measurement of High-Resistivity GaN Film, 半导体学报, 2007, 第 2 作者
(161) Algan/aln/gan/sic hemt structure with high mobility gan thin layer as channel grown by mocvd, JOURNAL OF CRYSTAL GROWTH, 2007, 第 11 作者
(162) Al组分阶变势垒层AlGaN/AlN/GaN HEMTs的制备及性能, Preparation and Properties of AlGaN/AlN/GaN HEMTs with Compositionally Step-Graded AlGaN Barrier Layer, 半导体学报, 2007, 第 2 作者
(163) 生长温度对RF-MBE外延InAlGaN的影响, Effects of Growth Temperature on the InAlGaN Epilayer by RF-MBE, 半导体学报, 2007, 第 2 作者
(164) Characteristics of high al content alxga1-xn grown by metalorganic chemical vapor deposition, MICROELECTRONICS JOURNAL, 2007, 第 2 作者
(165) Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD, JOURNAL OF CRYSTAL GROWTH, 2007, 第 11 作者
(166) High responsivity ultraviolet photodetector based on crack-free GaN on Si (111), PHYSICASTATUSSOLIDICCURRENTTOPICSINSOLIDSTATEPHYSICS丛书标题PHYSICASTATUSSOLIDICCURRENTTOPICSINSOLIDSTATEPHYSICS, 2007, 
(167) Structure optimization of field-plate AlGaN/GaN HEMTs, MICROELECTRONICS JOURNAL, 2007, 第 6 作者
(168) Simulation of in0.65ga0.35n single-junction solar cell, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 第 2 作者
(169) 基于AlGaN/GaN HEMT的C波段功率放大器混合集成电路的设计, AlGaN/GaN HEMTs Power Amplifier MIC with Powercombining at C-Band, 电子器件, 2007, 第 10 作者
(170) Effects of buffer layers on the stress and morphology of gan epilayer grown on si substrate by mocvd, JOURNAL OF CRYSTAL GROWTH, 2007, 第 11 作者
(171) Effects of growth temperature of algan buffer layer on the properties of a1(0.58)ga(0.42)n epilayer by nh3-mbe, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 第 2 作者
(172) MOCVD方法制备高Al组分AlGaN, Growth of High Al Content AlGaN Epilayer by MOCVD, 半导体学报, 2007, 第 2 作者
(173) The influence of aln/gan superlattice intermediate layer on the properties of gan grown on si(111) substrates, CHINESE PHYSICS, 2007, 第 2 作者
(174) AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band, 半导体学报, 2007, 第 8 作者
(175) The influence of internal electric fields on the transition energy of ingan/gan quantum well, JOURNAL OF CRYSTAL GROWTH, 2007, 第 11 作者
(176) 双能态Cr+注入法制备GaCrN铁磁性薄膜, Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+, 半导体学报, 2007, 第 2 作者
(177) 插入δAl/AlN缓冲层在Si(111)上生长GaN, Growth of GaN on Si(111)by Inserting ��Al/AlN Buffer Layer, 半导体学报, 2007, 第 2 作者
(178) Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer, Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer, 中国物理快报:英文版, 2007, 第 2 作者
(179) Investigation of optical quenching of photoconductivity in high-resistivity gan epilayer, JOURNAL OF CRYSTAL GROWTH, 2007, 第 11 作者
(180) SiC衬底上高性能AlGaN/GaN HEMT结构材料的研制, High Quality AlGaN/GaN HEMT Materials Grown on SiC Substrates, 半导体学报, 2007, 第 1 作者
(181) The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates, The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates, 中国物理:英文版, 2007, 第 2 作者
(182) Growth and characterization of algan/aln/gan hemt structures with a compositionally step-graded algan barrier layer, CHINESE PHYSICS LETTERS, 2007, 第 2 作者
(183) 微波功率器件的扇形线测试电路, A Radial Stub Test Circuit for Microwave Power Devices, 半导体学报, 2006, 第 6 作者
(184) 蓝宝石衬底上单晶InAlGaN外延膜的RF-MBE生长, RF-MBE Growth of InAlGaN Epilayer on Sapphire Substrate, 半导体学报, 2006, 第 2 作者
(185) A Radial Stub Test Circuit for Microwave Power Devices, 半导体学报, 2006, 第 6 作者
(186) MOCVD生长的SiC衬底高迁移率GaN沟道层AlGaN/AlN/GaN HEMT结构, MOCVD-Grown AIGaN/AIN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC, 半导体学报, 2006, 第 1 作者
(187) MOCVD生长的SiC衬底高迁移率GaN沟道层AlGaN/AlN/GaN HEMT结构, MOCVD-Grown AIGaN/AIN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC, 半导体学报, 2006, 第 1 作者
(188) 高性能1mm SiC基AlGaN/GaN功率HEMT研制, 半导体学报, 2006, 第 8 作者
(189) Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices, CHINESE PHYSICS LETTERS, 2006, 第 2 作者
(190) Influence of aln interfacial layer on electrical properties of high-al-content al0.45ga0.55n/gan hemt structure, APPLIED SURFACE SCIENCE, 2006, 第 11 作者
(191) Ⅴ/Ⅲ比和生长温度对RF-MBE InN表面形貌的影响, Effect of ���/��� Flux Ratio and Growth Temperature on Indium Droplet Formation During RF-MBE Growth of InN, 半导体学报, 2005, 第 2 作者
(192) AlGaN/GaN基HBTs的高频特性模拟, Simulation on High-Frequency Performance of AlGaN/GaN HBTs, 半导体学报, 2005, 第 2 作者
(193) Growth and characterization of 0.8-μm gate length AlGaN/GaN HEMTs on sapphire substrates, Growth and characterization of 0.8-��m gate length AlGaN/GaN HEMTs on sapphire substrates, 中国科学:F辑英文版, 2005, 第 1 作者
(194) MOCVD外延生长高阻GaN薄膜材料, High Resistivity GaN Film Grown by MOCVD, 半导体学报, 2005, 第 2 作者
(195) 蓝宝石衬底上单晶InN外延膜的RF-MBE生长, 半导体学报, 2005, 第 2 作者
(196) 在复合衬底γ-Al2O3/Si(001)上生长GaN, Growth of GaN on ��-Al2O33/Si(001) Composite Substrates, 半导体学报, 2005, 第 9 作者
(197) 输出功率密度为2.23W/mm的X波段AlGaN/GaN功率HEMT器件, X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD, 半导体学报, 2005, 第 1 作者
(198) AlGaN/GaN HEMT电流崩塌效应研究进展, 固体电子学研究与进展, 2005, 第 2 作者
(199) 高性能1mm AlGaN/GaN功率HEMTs研制, 半导体学报, 2005, 第 6 作者
(200) RF—MBE生长的高Al势垒层AlGaN/GaNHEMT结构, 半导体学报, 2005, 第 1 作者
(201) 输出功率密度为2.23W/mm的X波段AlGaN/GaN功率HEMT器件, X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD, 半导体学报, 2005, 第 1 作者
(202) MOCVD生长Mg掺杂GaN的退火研究, 半导体学报, 2005, 第 2 作者
(203) 采用PECVD方法制作SiO2绝缘层的AlGaN/GaN MOS-HFET器件, PECVD SiO2 Layers on AIGaN/GaN Mental Oxide Semiconductor Heterostructure Field-Effect Transistor, 电子器件, 2005, 第 8 作者
(204) RF—MBE生长的AlGaN/GaN高电子迁移率晶体管特性, RF���MBE���������AlGaN���GaN���������������������������������, 半导体学报, 2004, 第 1 作者
(205) Si衬底和Si-SiO2-Si柔性衬底上的GaN生长, 半导体学报, 2004, 第 2 作者
(206) 可用于Ⅲ族氮化物生长的50mm 3C—SiC/Si(111)衬底的制备, Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for ���-Nitrides, 半导体学报, 2004, 第 7 作者
(207) RF—MBE生长的AlGaN/GaN高电子迁移率晶体管特性, 半导体学报, 2004, 第 1 作者
(208) Al_xGa_(1-x)N and GaN/Al_xGa_(1-x)N Quantum Wells Grown by Gas Sourc, 半导体学报, 1999, 第 1 作者
(209) GaN压电效应对载流子浓度的影响, 半导体学报, 1998, 第 4 作者
(210) InxGa1—xAs/InP应变量子阱中激子跃迁能量随In组分的变化, 半导体学报, 1998, 第 3 作者
(211) InxGa1—xAs/InP应变多量子阱P—i—N结构的GSMBE生长及X射线双晶…, 半导体学报, 1997, 第 1 作者
(212) GaN材料的GSMBE生长, 高技术通讯, 1997, 
(213) 压应变In(0.63)Ga(0.3)7As/InP单量子阱的变温光致发光研究, 半导体学报, 1997, 第 1 作者
(214) In0.63Ga0.37As/InP压应变量子阱的GSMBE生长及特性研究, 红外与毫米波学报, 1997, 第 1 作者
(215) GaN材料及InGaAs/InP量子阱结构材料的GSMBE生长及性能研究, 1997, 第 1 作者
(216) 压变应In0.63Ga0.37As/InP单量子阱的变温光致发光研究, 半导体学报, 1997, 第 1 作者
(217) GaN外延层的拉曼散射研究, 光散射学报, 1997, 第 5 作者
(218) In_xGa_(1-x)As/InP应变多量子阱P-i-N结构的GSMBE生长及X射线双晶衍射研究, 半导体学报, 1997, 第 5 作者
(219) 匹配In0.53Ga0.47As/InP量子阱材料的GSMBE生长及特性分析, 半导体学报, 1997, 第 2 作者
(220) MBE生长温度对InGaAs/GaAs应变单量阱激光器性能的影响, 电子显微学报, 1997, 第 1 作者
(221) In_(0.63)Ga_(0.37)As/InP压应变量子阱GSMBE生长及特性研究, 红外与毫米波学报, 1997, 第 6 作者

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( 1 ) GaN 光电导开关, 负责人, 国家任务, 2021-11--2025-11
( 2 ) 宽推3期, 负责人, 国家任务, 2017-01--2020-12
( 3 ) 4英寸AlGaN/GaN******, 参与, 国家任务, 2016-01--2018-12
( 4 ) GaN同质外延生长技术研究, 负责人, 其他国际合作项目, 2016-01--2018-12
( 5 ) 宽推二期, 负责人, 国家任务, 2014-01--2016-12
( 6 ) 高温MOCVD****, 负责人, 国家任务, 2014-01--2016-12
( 7 ) GaN基功率器件基础问题研究, 负责人, 国家任务, 2014-01--2018-12
( 8 ) InGaN基全光谱光伏材料及其器件应用, 负责人, 国家任务, 2012-01--2016-08
( 9 ) 毫米波GaN****, 参与, 国家任务, 2012-01--2016-12
( 10 ) 3-4英寸GaN基微电子材料专用MOCVD装备研制, 负责人, 中国科学院计划, 2011-11--2013-10
( 11 ) 核高基国家科技重大专项(宽带****), 负责人, 国家任务, 2011-01--2013-12
( 12 ) SiC衬底HEMT结构材料生长技术研究, 负责人, 国家任务, 2011-01--2015-12
( 13 ) 毫米波GaN功率器件和电路研究, 负责人, 国家任务, 2010-01--2014-12
( 14 ) 核高基国家科技重大专项(Ku****), 负责人, 国家任务, 2009-01--2012-12
( 15 ) GaN 基毫米波功率器件与材料的新结构研究, 负责人, 国家任务, 2009-01--2012-12