过去的数十年中， CMOS 晶体管特征尺寸遵循摩尔定律从微米尺度向纳米尺度不断缩小，器件性能及其集成度得到持续提升。低成本、低功耗、高集成度仍在持续驱动 CMOS 器件的纳米化进程。随着CMOS器件特征尺寸缩小到10 nm以下，一方面在越来越短的沟道上实现掺杂浓度和类型的突变，变得越来越困难；而另一方面在越来越细的沟道中杂质波动对器件电学性能的影响也越来越大。近10年以来，纳米尺度下掺杂原子对晶体管性能影响的研究不断升温，硅单原子晶体管的概念正在变为现实。杂质在接近原子尺度的局域纳米空间将变得分立，电子通过电离的杂质将表现出显著的量子效应。单原子晶体管代表的是固态器件的最终尺度极限，杂质原子的尺度与2 nm左右的波尔半径相当，杂质原子的数量、分布和电离能都会决定器件的性能。单原子晶体管依赖电离杂质作为量子点工作，是单电子晶体管器件家族中的特殊成员。传统单电子晶体管依赖纳米加工形成的人造库仑岛进行工作，库仑岛由栅电极诱导电势限制或沟道起伏纳米空间限制形成。单原子晶体管中的电离杂质能级位于导带底部附近，电荷输运通过分立的杂质能级，最多容许两个电子通过。栅控电流谱的研究可以揭示电离杂质的许多重要的信息和潜在的应用方向。

招收硕士和博士研究生，具有半导体物理与器件、固体物理和集成电路的专业背景，未来主要从事半导体微纳结构器件物理和电路设计的研究。

140100-集成电路科学与工程

半导体纳米器件和电路
新型微电子、光电子器件及其集成技术的研究、开发与应用
微纳加工技术

1998-09--2001-07   中国科学院半导体研究所集成光电子学国家重点联合实验室   理学博士
1995-09--1998-06   吉林大学电子工程系集成光电子学国家重点联合实验室   理学硕士
1991-09--1995-06   沈阳工业大学电子工程系   工学学士

-- 研究生

-- 博士

   

2015-01~现在, 中国科学院半导体研究所半导体集成技术工程研究中心, 三级研究员
2009-01~2014-12,中国科学院半导体研究所半导体集成技术工程研究中心, 四级研究员
2004-04~2008-12,中国科学院半导体研究所半导体集成技术工程研究中心, 副研究员
2002-01~2004-03,日本北海道大学集成量子电子学研究中心, 讲师

半导体纳米电子学
半导体微纳加工技术
半导体纳米电子学基础
半导体微纳器件及其应用
电子束曝光技术

   

（1） 中科院半导体所2014年度青年科技奖, 研究所（学校）, 2014

[1] 陈俊东, 韩伟华, 葛延栋, 杨富华. 基于铁电多栅硅基的杂质原子晶体管及其制备方法. CN115312602A, 2022-09-07.
[2] 葛延栋, 韩伟华. 神经元晶体管及其制备方法. CN114843345A, 2022-04-29.
[3] 杨冲, 韩伟华, 陈俊东, 张晓迪, 郭仰岩, 杨富华. 基于相变材料存储栅的无结硅纳米线晶体管及制备方法. CN: CN112614865A, 2021-04-06.
[4] 冯佐, 李兆峰, 杨富华, 王晓东, 何玉铭, 韩伟华. 混合集成的氮化硅微环谐振腔及其制备方法. CN: CN111399117B, 2021-02-02.
[5] 赵晓松, 韩伟华, 郭仰岩, 窦亚梅, 张晓迪, 吴歆宇, 杨富华. 一种基于共振隧穿的纳米线晶体管及其制备方法. CN: CN110491940A, 2019-11-22.
[6] 张晓迪, 韩伟华. 三维势垒限制的硅基杂质原子晶体管及其制备方法. CN: CN110299400A, 2019-10-01.
[7] 何玉铭, 韩伟华, 李兆峰, 杨富华, 陈淼. 谐振式陀螺仪光波导芯片及其制备方法. CN: CN110186447A, 2019-08-30.
[8] 吴歆宇, 韩伟华, 杨富华. 基于硅纳米晶粒束缚的杂质原子晶体管及其制备方法. CN: CN110148622B, 2020-12-15.
[9] 吴歆宇, 韩伟华, 杨富华. 基于硅纳米晶粒束缚的杂质原子晶体管及其制备方法. CN: CN110148622A, 2019-08-20.
[10] 郭仰岩, 韩伟华, 窦亚梅, 赵晓松, 杨富华. 杂质原子阵列晶体管及其制备方法. CN: CN110085673A, 2019-08-02.
[11] 何玉铭, 韩伟华, 李兆峰, 颜伟, 王晓东, 杨富华. 气体传感器及其制备方法. CN: CN109709069A, 2019-05-03.
[12] 窦亚梅, 韩伟华, 张晓迪, 赵晓松, 郭仰岩, 吴歆宇, 杨富华. 三维空间束缚单杂质原子晶体管及其制备方法. CN: CN111223923B, 2021-01-15.
[13] 窦亚梅, 韩伟华, 郭仰岩, 赵晓松, 杨富华. 硅晶面依赖的纳米结构晶体管及制备方法. CN: CN109962107A, 2019-07-02.
[14] 张望, 韩伟华, 赵晓松, 杨富华. III‑V族化合物横向纳米线结构，纳米线晶体管及其制备方法. CN: CN106898641A, 2017-06-27.
[15] 马刘红, 韩伟华, 付英春, 洪文婷, 吕奇峰, 杨富华. 一种围栅无结纳米线晶体管的制备方法. CN: CN105185823A, 2015-12-23.
[16] 吕奇峰, 韩伟华, 洪文婷, 杨富华. SOI叉指结构衬底Ⅲ-Ⅴ族材料沟道薄膜晶体管及制备方法. CN: CN105070763A, 2015-11-18.
[17] 洪文婷, 韩伟华, 吕奇峰, 杨富华. 基于SOI衬底的横向纳米线叉指结构晶体管及制备方法. CN: CN104992972A, 2015-10-21.
[18] 洪文婷, 韩伟华, 吕奇峰, 杨富华. 基于SOI衬底的Ⅲ-V族纳米线平面晶体管及制备方法. CN: CN104934479A, 2015-09-23.
[19] 王昊, 韩伟华, 杨富华. 基于SOI衬底的单杂质原子无结硅纳米线晶体管及制备方法. CN: CN104867834A, 2015-08-26.
[20] 王昊, 韩伟华, 马刘红, 杨富华. 一种无结晶体管的电阻测试方法. CN: CN103575998A, 2014-02-12.
[21] 韩伟华, 王昊, 马刘红, 洪文婷, 杨晓光, 杨涛, 杨富华. 硅基横向纳米线多面栅晶体管及其制备方法. CN: CN103311305A, 2013-09-18.
[22] 韩伟华, 杨晓光, 杨涛, 王昊, 洪文婷, 杨富华. 硅基III-V族纳米线选区横向外延生长的方法. CN: CN103346070A, 2013-10-09.
[23] 陈燕坤, 韩伟华, 洪文婷, 杨富华. 纳米孔与金属颗粒复合陷光结构太阳能电池及制备方法. CN: CN103219411A, 2013-07-24.
[24] 李小明, 韩伟华, 张严波, 颜伟, 杜彦东, 陈燕坤, 杨富华. 一种基于体硅材料的无结硅纳米线晶体管及其制备方法. CN: CN102916048A, 2013-02-06.
[25] 韩伟华, 陈艳坤, 李小明, 杨富华. 聚光硅纳米孔阵列结构太阳能电池及其制备方法. CN: CN102610665A, 2012-07-25.
[26] 杜彦东, 韩伟华, 颜伟, 张严波, 杨富华. SiO 2 /SiN双层钝化层T型栅AlGaN/GaN HEMT及制作方法. 中国: CN102437182A, 2012-05-02.
[27] 张严波, 韩伟华, 杜彦东, 李小明, 陈艳坤, 杨香, 杨富华. 半导体晶体管结构及其制造方法. CN: CN102280454A, 2011-12-14.
[28] 韩伟华, 陈燕坤, 李小明, 张严波, 杜彦东, 杨富华. 硅纳米线光栅谐振增强型光电探测器及其制作方法. CN: CN102201483A, 2011-09-28.
[29] 颜伟, 杜彦东, 韩伟华, 杨富华. 利用光子束超衍射技术制备半导体T型栅电极的方法. CN: CN102157361A, 2011-08-17.
[30] 熊莹, 韩伟华, 杨富华. 具有图像分割功能的脉冲耦合神经网络的实现电路. CN: CN101916393A, 2010-12-15.
[31] 韩伟华, 熊莹, 张严波, 赵凯, 杨富华. 一种利用时间编码控制权重和信息整合的方法. CN: CN101860357A, 2010-10-13.
[32] 韩伟华, 熊莹, 赵凯, 杨香, 张严波, 王颖, 杨富华. 基于脉冲耦合的硅纳米线CMOS神经元电路. CN: CN101997538A, 2011-03-30.
[33] 杨香, 韩伟华, 王颖, 张杨, 杨富华. 依赖晶面的三维限制硅纳米结构的制备方法. CN: CN101723312A, 2010-06-09.
[34] 王 颖, 韩伟华, 杨 香, 张 杨, 杨富华. 环形孔阵列结构的二维光子晶体的制作方法. CN: CN101470347A, 2009-07-01.
[35] 韩伟华. 硅基单电子神经元量子电路. CN: CN101364594A, 2009-02-11.
[36] 韩伟华, 杨 香. 具有双量子点接触结构的硅基单电子器件及其制作方法. CN: CN101359683A, 2009-02-04.
[37] 韩伟华, 杨 香. 围栅控制结构的硅基单电子晶体管及其制作方法. CN: CN101359684A, 2009-02-04.
[38] 韩伟华, 杨 香, 吴南健. 一种具有侧栅结构的硅基单电子记忆存储器及其制作方法. CN: CN101174637A, 2008-05-07.
[39] 韩伟华, 张 扬, 刘 剑, 杨富华. 通过注氧进行量子限制的硅基单电子晶体管. CN: CN100409454C, 2008-08-06.
[40] 韩伟华, 张扬, 刘剑, 杨富华. 通过注氧进行量子限制的硅基单电子晶体管及制作方法. CN: CN1953205A, 2007-04-25.
[41] 韩伟华, 商姊萌, 王博维. 硅基量子模拟器及其制备方法. CN117878146A, 2024-04-12.
[42] 边庆玉, 陈平, 韩伟华, 梁锋, 赵德刚. 具有弧形收集极结构的纳米真空沟道晶体管及制备方法. CN: CN117410324A, 2024-01-16.

   

[1] 商姊萌, 王博维, 韩伟华. 基于原子体系人造晶格构建量子模拟器. 微纳电子技术[J]. 2024, 第 3 作者  通讯作者  61(8): 080101- 1, https://bdtq.cbpt.cnki.net/WKE2/WebPublication/paperDigest.aspx?paperID=74e7f40a-bb05-4458-8665-257058676667#.
[2] Jia, Lu, Han, Guowei, Wei, Zhenyu, Si, Chaowei, Ning, Jin, Yang, Fuhua, Han, Weihua. Design and analysis of MEMS tuning fork gyroscope with dual mode ordering. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. 2023, 第 7 作者  通讯作者  http://dx.doi.org/10.1002/mop.33754.
[3] 陈俊东, 韩伟华, 葛延栋, 张晓迪, 杨富华. Modulating thermally activated hole transport in a multi-channel silicon nanowire transistor by single acceptor-induced traps. IEEE 16th International Conference on Solid-State &Integrated Circuit Technology. 2022, 第 2 作者  通讯作者  https://doi.org/10.1109/ICSICT55466.2022.9963441.
[4] Chen, Jundong, Han, Weihua, Zhang, Yanbo, Zhang, Xiaodi, Ge, Yandong, Guo, Yangyan, Yang, Fuhua. Bias-dependent hole transport through a multi-channel silicon nanowire transistor with single-acceptor-induced quantum dots. NANOSCALE[J]. 2022, 第 2 作者  通讯作者  14(30): 11018-11027, http://dx.doi.org/10.1039/d2nr02250h.
[5] Zhao, Shuai, Yuan, Guodong, Zhang, Di, Wu, Xingjun, Han, Weihua. Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2022, 第 5 作者138: http://dx.doi.org/10.1016/j.mssp.2021.106308.
[6] Guo, YangYan, Han, WeiHua, Zhang, XiaoDi, Chen, JunDong, Yang, FuHua. Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor. CHINESE PHYSICS B[J]. 2022, 第 2 作者  通讯作者  31(1): 579-584, http://dx.doi.org/10.1088/1674-1056/ac21ba.
[7] Zhang, Xiaodi, Chen, Jundong, Han, Weihua, Ge, Yandong, Guo, Yangyan, Dong, Xianzi, Duan, Xuanming, Zheng, Meiling, Yang, Fuhua. Transport spectroscopy from Hubbard bands of dopant-induced quantum dot array to one-dimensional conduction subband. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2022, 第 3 作者  通讯作者  55(41): 
[8] Yifan Fu, Liuhong Ma, Zhiyong Duan, Weihua Han. Effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistor. 半导体学报:英文版[J]. 2022, 第 4 作者43(5): 104-108, http://lib.cqvip.com/Qikan/Article/Detail?id=7107263710.
[9] Zhao, Shuai, Yuan, Guodong, Zhu, Qiuhao, Song, Luhang, Zhang, Di, Liu, Yumeng, Lu, Jun, Han, Weihua, Luo, Junwei. Cryogenic Mobility Enhancement Si MOS Devices via SiO2 Regrowth. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 第 8 作者69(5): 2585-2589, http://dx.doi.org/10.1109/TED.2022.3158628.
[10] 葛延栋, 韩伟华, 杨冲, 陈俊东, 张晓迪. Silicon Nanowire Transistor Integrated with Phase Change Gate. IEEE 16th International Conference on Solid-State &Integrated Circuit Technology. 2022, 第 2 作者  通讯作者  https://doi.org/10.1109/ICSICT55466.2022.9963325.
[11] Huang, Xingrui, Liu, Yang, Li, Zhiyong, Fan, Zhongchao, Han, Weihua. High-performance and compact integrated photonics platform based on silicon rich nitride-lithium niobate on insulator. APL PHOTONICS[J]. 2021, 第 5 作者6(11): http://dx.doi.org/10.1063/5.0065437.
[12] Liu, Yang, Huang, Xingrui, Guan, Huan, Yu, Zhiguo, Wei, Qingquan, Fan, Zhongchao, Han, Weihua, Li, Zhiyong. C-band four-channel CWDM (de-)multiplexers on a thin film lithium niobate-silicon rich nitride hybrid platform. OPTICS LETTERS[J]. 2021, 第 7 作者46(19): 4726-4729, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000702746400005.
[13] He, Yuming, Lu, Ziqing, Kuai, Xuebao, Feng, Zuo, Han, Weihua, Li, Zhaofeng, Yan, Wei, Yang, Fuhua. Heterogeneous integration of InP and Si3N4 waveguides based on interlayer coupling for an integrated optical gyroscope. APPLIED OPTICS[J]. 2021, 第 5 作者60(3): 662-669, https://www.webofscience.com/wos/woscc/full-record/WOS:000609948100023.
[14] Han Weihua. Low temperature electric field dependent mobility of the current oscillation regime in silicon junctionless nanowire transistor. IEEE International Conference on Solid-State and-Integrated Circuits Technology Proceedings (ICSICT), Kunming, Nov.3-6, p.186-189. 2020, 第 1 作者
[15] ZeZhengLi, WeiHuaHan, ZhiYongLi. Unitary transformation of general nonoverlapping-image multimode interference couplers with any input and output ports. Chinese Physics B[J]. 2020, 第 2 作者29(1): 14206-014206, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ab5783.
[16] 杨冲, 韩伟华, 陈俊东, 张晓迪, 郭仰岩, 杨富华. 相变材料Ge2Sb2Te5的性质及其面向新型数据存储的应用. 微纳电子技术[J]. 2020, 第 2 作者57(5): 341-348, http://lib.cqvip.com/Qikan/Article/Detail?id=7101876898.
[17] Zezheng Li, Xingrui Huang, Yang Liu, Yingxin Kuang, Huan Guan, Lifei Tian, Zhiyong Li, Weihua Han. Ultra-compact low-loss variable-ratio 1×2 power splitter with ultra-low phase deviation based on asymmetric ladder-shaped multimode interference coupler. OPTICS EXPRESS[J]. 2020, 第 8 作者28(23): 34137-34146, 
[18] Xinyu Wu, Weihua Han, Xiaosong Zhao, Yangyan Guo, Xiaodi Zhang, Fuhua Yang. Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors. 半导体学报:英文版[J]. 2020, 第 2 作者41(7): 44-48, http://lib.cqvip.com/Qikan/Article/Detail?id=7102257017.
[19] Feng, Zuo, He, Yuming, Yan, Wei, Yang, Fuhua, Han, Weihua, Li, Zhaofeng. Progress of Waveguide Ring Resonators Used in Micro-Optical Gyroscopes. PHOTONICS[J]. 2020, 第 5 作者7(4): https://doaj.org/article/2e2a68f73f304f2c93d89d6f65c856ee.
[20] Chen JunDong, Han WeiHua, Yang Chong, Zhao XiaoSong, Guo YangYan, Zhang XiaoDi, Yang FuHua. Recent research progress of ferroelectric negative capacitance field effect transistors. ACTA PHYSICA SINICA. 2020, 第 2 作者  通讯作者  69(13): http://dx.doi.org/10.7498/aps.69.20200354.
[21] 韩伟华. 相变材料Ge2Sb2Te5的性质及其面向新型数据存储的应用 （上）. 微纳电子技术, Vol. 57, No.5, 341-348. 2020, 第 1 作者  通讯作者  
[22] LiuHongMa, WeiHuaHan, FuHuaYang. Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors. Chinese Physics B[J]. 2020, 第 2 作者  通讯作者  29(3): 38104-038104, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ab74ce.
[23] Liu, Yang, Huang, Xingrui, Li, Zezheng, Guan, Huan, Wei, Qingquan, Fan, Zhongchao, Han, Weihua, Li, Zhiyong. Efficient grating couplers on a thin film lithium niobate-silicon rich nitride hybrid platform. OPTICS LETTERS[J]. 2020, 第 7 作者45(24): 6847-6850, http://dx.doi.org/10.1364/OL.413246.
[24] 陈俊东, 韩伟华, 杨冲, 赵晓松, 郭仰岩, 张晓迪, 杨富华. 铁电负电容场效应晶体管研究进展. 物理学报[J]. 2020, 第 2 作者69(13): 46-74, https://wulixb.iphy.ac.cn/cn/article/doi/10.7498/aps.69.20200354.
[25] Li, Zezheng, Huang, Xingrui, Liu, Yang, Kuang, Yingxin, Guan, Huan, Tian, Lifei, Li, Zhiyong, Han, Weihua. Ultra-compact low-loss variable-ratio 1x2 power splitter with ultra-low phase deviation based on asymmetric ladder-shaped multimode interference coupler. OPTICS EXPRESS[J]. 2020, 第 8 作者28(23): 34137-34146, https://www.webofscience.com/wos/woscc/full-record/WOS:000589869600031.
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[109] Yang Xiang, Han Weihua, Wang Ying, Zhang Yang, Yang Fuhua. Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography. 半导体学报[J]. 2008, 第 2 作者29(6): 1057-1061, http://ir.semi.ac.cn/handle/172111/16041.
[110] 韩伟华, 汤圆美树, 葛西诚也. GaAs基单电子晶体管低温探测THz光子的研究. 半导体学报[J]. 2007, 第 1 作者28(4): 500-506, http://lib.cqvip.com/Qikan/Article/Detail?id=24217834.
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[112] Han Weihua, Yomoto M, Kasai S. Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures. 半导体学报[J]. 2007, 第 1 作者28(4): 500-506, http://ir.semi.ac.cn/handle/172111/16319.
[113] Han Weihua. Fabrication of a high quality etching mask for two-dimensional photonic crystal structures. Chinese Journal of Semiconductors. 2006, 第 1 作者
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[117] Seiya Kasai, Weihua Han, Miki Yumoto, Hideki Hasegawa. Terahertz response of Schottky wrap gate‐controlled quantum dots. 2003, 第 2 作者http://kns.cnki.net/KCMS/detail/detail.aspx?QueryID=0&CurRec=1&recid=&FileName=SJWD9829303A1B4006E1FE324664BDB622C0&DbName=SJWDLAST&DbCode=SJWD&yx=&pr=&URLID=&bsm=.
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[119] 余金中, 韩伟华. 硅片接触表面的弹性形变范围. 半导体光电[J]. 2001, 第 2 作者22(6): 440-442, http://lib.cqvip.com/Qikan/Article/Detail?id=5847417.
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[121] Han Weihua. A thermodynamic model on hydrogen-induced silicon surface layer cleavage. Journal of Applied Physics. 2001, 第 1 作者
[122] 韩伟华, 余金中. 智能剥离工艺的热动力学模型. 半导体学报[J]. 2001, 第 1 作者22(7): 821-825, http://lib.cqvip.com/Qikan/Article/Detail?id=5386595.
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（1） 走向量子鳍式场效应晶体管, Toward Quantum FinFET, Springer, 2013-12, 第 1 作者

   

（ 1 ） 杂质原子作为量子输运构件的硅纳米结构晶体管研究, 负责人, 国家任务, 2024-01--2027-12
（ 2 ） 微纳器件跨尺度制备工艺创新与应用探索, 负责人, 国家任务, 2016-07--2021-06
（ 3 ） 硅基III-V族纳米线选区横向生长及其高迁移率3D晶体管研究, 负责人, 国家任务, 2014-01--2017-12
（ 4 ） 基于低能场发射电子的三维微纳加工与原位测量系统, 参与, 国家任务, 2014-01--2019-06
（ 5 ） 纳米器件制备工艺创新与应用基础研究, 负责人, 国家任务, 2010-01--2014-08
（ 6 ） 非对称库仑岛串联结构的硅基单电子器件的研究, 负责人, 国家任务, 2008-01--2008-12
（ 7 ） 硅基单电子神经元量子电路的研制, 负责人, 国家任务, 2007-07--2010-11
（ 8 ） SOI衬底上单电子晶体管的研制, 负责人, 国家任务, 2006-01--2008-12

（1）Observation of single-electron transport through deeper-potential single dopant atom in silicon nanowire transistor at elevated temperatures   Xiao-Di Zhang, Wei-Hua Han, Xiao-Song Zhao, Yang-Yan Guo, Xin-Yu Wu and Fu-Hua Yang   2019-08-16
（2）One-Dimensional Transport through Two Subbands in Silicon Junctionless Nanowire Transistors   2018-10-31
（3）Coulomb Interaction in One Dimensional Transport of Silicon Junctionless Nanowire Transistor   2018-10-31
（4）Temperature-dependent mobility characteristics in one-dimension transport in junctionless nanowire transistor   2018-10-31
（5）Analysis of Degenerate One-Dimensional Subbands in Single n-Channel Junctionless Nanowire Transistors   2017-12-16
（6）Novel Si-base horizontal InAs nanowire transistors   2016-07-31
（7）Transport through dopant atom arrays in-silicon junctionless nanowire transistor   2014-10-29
（8）Analog CMOS pulse-coupled neuron circuit with multipath-switching device   Weihua Han*, Ying Xiong, Kai Zhao, Yanbo Zhang, Fuhua Yang   2012-10-29
（9）An Analog CMOS Pulse Coupled Neural Network for Image Segmentation   Y. Xiong, W.H. Han   2010-11-01
（10）Self-limiting oxidation of silicon nanostructure on silicon-on-insulator substrate    WH Han   2009-12-07
（11）Fabrication method of silicon nanostructures by anisotropic etching   WH Han   2008-09-17

已指导学生

熊莹  硕士研究生  080903-微电子学与固体电子学  

杜彦东  硕士研究生  080903-微电子学与固体电子学  

陈燕坤  硕士研究生  080903-微电子学与固体电子学  

李小明  硕士研究生  430110-集成电路工程  

洪文婷  硕士研究生  080903-微电子学与固体电子学  

吕奇峰  硕士研究生  085208-电子与通信工程  

王昊  博士研究生  080903-微电子学与固体电子学  

张望  硕士研究生  080903-微电子学与固体电子学  

赵晓松  博士研究生  080903-微电子学与固体电子学  

匡迎新  博士研究生  080903-微电子学与固体电子学  

杨冲  硕士研究生  080903-微电子学与固体电子学  

李泽正  博士研究生  080903-微电子学与固体电子学  

张晓迪  博士研究生  080903-微电子学与固体电子学  

葛延栋  硕士研究生  080903-微电子学与固体电子学  

现指导学生

贾璐  博士研究生  080903-微电子学与固体电子学  

商姊萌  硕士研究生  080903-微电子学与固体电子学  

王博维  硕士研究生  080903-微电子学与固体电子学