基本信息
周易  男  博导  中国科学院上海技术物理研究所
电子邮件: zhouyi@mail.sitp.ac.cn
通信地址: 上海市虹口区玉田路500号
邮政编码:

研究领域

红外探测材料与器件、量子结构新型红外光电器件、多维感知红外探测芯片

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
II类超晶格红外探测器
新型量子结构红外探测器

教育背景

2007-09--2012-06   中国科学院研究生院   博士研究生
2003-09--2007-06   南京大学理科强化班   本科学士学位

工作经历

   
工作简历
2018-09~2019-03,英国兰卡斯特大学, 访问学者
2012-07~现在, 中国科学院上海技术物理研究所, 助研、副研究员、研究员

专利与奖励

   
奖励信息
(1) 上海技物所2015年度创新专项一等奖, 一等奖, 研究所(学校), 2015
专利成果
( 1 ) 一种基于带间级联结构的长波超晶格红外探测器, 发明专利, 2018, 第 2 作者, 专利号: CN108417661A

( 2 ) 基于带间级联结构的长波超晶格红外探测器, 实用新型, 2019, 第 2 作者, 专利号: CN208904041U

( 3 ) 一种用来测量超晶格材料少子横向扩散长度的器件结构, 发明专利, 2018, 第 1 作者, 专利号: CN108417663A

( 4 ) 一种基于砷化铟衬底的II类超晶格结构, 实用新型, 2016, 第 4 作者, 专利号: CN205542814U

( 5 ) 无铝型II类超晶格长波双势垒红外探测器, 实用新型, 2016, 第 1 作者, 专利号: CN205810841U

( 6 ) 一种无铝型II类超晶格长波双势垒红外探测器, 发明专利, 2018, 第 1 作者, 专利号: CN105789364B

( 7 ) 一种基于砷化铟衬底的II类超晶格结构及制备方法, 发明专利, 2016, 第 4 作者, 专利号: CN105514189A

( 8 ) 基于砷阀开关的II类超晶格结构及制备方法, 发明专利, 2014, 第 4 作者, 专利号: CN103500765A

出版信息

   
发表论文
[1] 崔玉容, 周易, 黄敏, 王芳芳, 徐志成, 许佳佳, 陈建新, 何力. InAs/GaSbⅡ类超晶格长波红外探测器的表面处理研究. 红外与毫米波学报. 2023, 第 2 作者42(1): 8-13, http://lib.cqvip.com/Qikan/Article/Detail?id=7108972663.
[2] 周建, 周易, 倪歆玥, 王芳芳, 应翔霄, 黄敏, 徐志成, 陈凡胜, 刘云猛, 陈建新. 偏振集成红外光电探测器研究进展与应用. 光电工程[J]. 2023, 第 2 作者  通讯作者  50((5): 230010): 
[3] 史睿, 周建, 白治中, 徐志成, 周易, 梁钊铭, 师瑛, 徐庆庆, 陈建新. 基于多层薄膜的长波红外InAs/GaSbⅡ类超晶格焦平面光响应调控研究. 红外与毫米波学报[J]. 2022, 第 5 作者41(1): 248-252, http://lib.cqvip.com/Qikan/Article/Detail?id=7106726925.
[4] 柴旭良, 周易, 王芳芳, 徐志成, 梁钊铭, 朱艺红, 周建, 郑露露, 黄敏, 白治中, 黄爱波, 陈红雷, 丁瑞军, 陈建新. 面向高工作温度应用的带间级联红外光电器件. 红外与毫米波学报[J]. 2022, 第 2 作者41(1): 122-128, http://lib.cqvip.com/Qikan/Article/Detail?id=7106726915.
[5] Fangfang Wang, Zhicheng Xu, Zhizhong Bai, Hui Li, Yi Zhou, Jianxin Chen, Li He. Fabrication of a 1024×1024 format long wavelength infrared focal plane array based on type-II superlattice and barrier enhanced structure. INFRARED PHYSICS AND TECHNOLOGY[J]. 2021, 第 5 作者115: http://dx.doi.org/10.1016/j.infrared.2021.103700.
[6] Xu, Jiajia, Xu, Zhicheng, Bai, Zhizhong, Huang, Min, Huang, Aibo, Zheng, Lulu, Zhou, Yi, Chen, Honglei, Chen, Jianxin, Ding, Ruijun, He, Li. Effects of etching processes on surface dark current of long-wave infrared InAs/GaSb superlattice detectors. INFRARED PHYSICS & TECHNOLOGY[J]. 2020, 第 7 作者107: http://dx.doi.org/10.1016/j.infrared.2020.103277.
[7] Huang, Min, Chen, Jianxin, Xu, Zhicheng, Xu, Jiajia, Bai, Zhizhong, Wang, Fangfang, Zhou, Yi, Huang, Aibo, Ding, Ruijun, He, Li. InAs/GaAsSb Type-II Superlattice LWIR Focal Plane Arrays Detectors Grown on InAs Substrates. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2020, 第 7 作者32(8): 453-456, https://www.webofscience.com/wos/woscc/full-record/WOS:000522197700001.
[8] Chen, Xiren, Xu, Zhicheng, Zhou, Yi, Zhu, Liangqing, Chen, Jianxin, Shao, Jun. Evaluating interface roughness and micro-fluctuation potential of InAs/GaSb superlattices by mid-infrared magnetophotoluminescence. APPLIED PHYSICS LETTERS[J]. 2020, 第 3 作者117(8): http://dx.doi.org/10.1063/5.0015540.
[9] Chen, Yaojiang, Chai, Xuliang, Xie, Zhiyang, Deng, Zhuo, Zhang, Ningtao, Zhou, Yi, Xu, Zhicheng, Chen, Jianxin, Chen, Baile. High-Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaAsSb Type-II Superlattice. JOURNALOFLIGHTWAVETECHNOLOGY[J]. 2020, 第 6 作者  通讯作者  38(4): 939-945, https://www.webofscience.com/wos/woscc/full-record/WOS:000516613400030.
[10] Xie, Zhiyang, Huang, Jian, Chai, Xuliang, Deng, Zhuo, Chen, Yaojiang, Lu, Qi, Xu, Zhicheng, Chen, Jianxin, Zhou, Yi, Chen, Baile. High-speed mid-wave infrared interband cascade photodetector at room temperature. OPTICS EXPRESS[J]. 2020, 第 9 作者  通讯作者  28(24): 36915-36923, http://dx.doi.org/10.1364/OE.409868.
[11] Xuliang Chai, Yi Zhou, Zhicheng Xu, Jianxin Chen, Li He. Mid-wavelength interband cascade infrared photodetectors with two and three stages. INFRARED PHYSICS AND TECHNOLOGY. 2020, 第 2 作者  通讯作者  http://dx.doi.org/10.1016/j.infrared.2020.103292.
[12] Wang, Liang, Xu, Zhicheng, Xu, Jiajia, Dong, Feng, Wang, Fangfang, Bai, Zhizhong, Zhou, Yi, Chai, Xuliang, Li, Hui, Ding, Ruijun, Chen, Jianxin, He, Li. Fabrication and Characterization of InAs/GaSb type-II Superlattice Long-Wavelength Infrared Detectors Aiming High Temperature Sensitivity. JOURNAL OF LIGHTWAVE TECHNOLOGY[J]. 2020, 第 7 作者38(21): 6129-6134, http://dx.doi.org/10.1109/JLT.2020.3005974.
[13] Chai, Xuliang, Zhou, Yi, Xu, Zhicheng, Chen, Jianxin, He, Li. Mid-wavelength interband cascade infrared photodetectors with two and three stages. INFRARED PHYSICS & TECHNOLOGY[J]. 2020, 第 2 作者  通讯作者  107: http://dx.doi.org/10.1016/j.infrared.2020.103292.
[14] 许佳佳, 黄敏, 徐庆庆, 徐志成, 王芳芳, 白治中, 周易, 陈建新, 何力. InAs/GaSbⅡ类超晶格台面的ICP刻蚀研究. 红外与毫米波学报[J]. 2019, 第 7 作者38(2): 171-174, http://lib.cqvip.com/Qikan/Article/Detail?id=7001818573.
[15] Chen, Sai, Chen, Zhao, Liu, Junku, Cheng, Jierong, Zhou, Yi, Xiao, Lin, Chen, Kai. Ultra-Narrow Band Mid-Infrared Perfect Absorber Based on Hybrid Dielectric Metasurface. NANOMATERIALS[J]. 2019, 第 5 作者9(10): http://dx.doi.org/10.3390/nano9101350.
[16] Zhou, Yi, Lu, Qi, Chai, Xuliang, Xu, Zhicheng, Chen, Jianxin, Krier, Anthony, He, Li. InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency. APPLIED PHYSICS LETTERS[J]. 2019, 第 1 作者114(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000474433800024.
[17] Xu JiaJia, Huang Min, Xu QingQing, Xu ZhiCheng, Wang FangFang, Bai ZhiZhong, Zhou Yi, Chen JianXin, He Li. Study on ICP dry etching of type II InAs/GaSb superlattices infrared focal plane arrays. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2019, 第 7 作者38(2): 171-174, https://www.webofscience.com/wos/woscc/full-record/WOS:000467803100008.
[18] Zhou Yi, Chai XuLiang, Tian Yuan, Xu ZhiCheng, Huang Min, Xu JiaJia, Huang AiBo, Bai ZhiZhong, Chen HongLei, Ding RuiJun, Chen JianXin, He Li. Studies on InAs/GaAsSb mid-wavelength interband cascade infrared focal plane arrays. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2019, 第 1 作者  通讯作者  38(6): 745-750, 
[19] Zhou, Yi, Chai, Xuliang, Tian, Yuan, Huang, Min, Xu, Zhicheng, Chen, Jianxin, He, Li. Higher performance long wavelength interband cascade photodetector compared with a PB pi BN device. APPLIED PHYSICS LETTERS[J]. 2019, 第 1 作者115(8): 
[20] 周易. 我的爷爷,生于1929. 上海支部生活[J]. 2019, 第 1 作者4-4, http://lib.cqvip.com/Qikan/Article/Detail?id=7002738257.
[21] Huang, Min, Chen, Jianxin, Zhou, Yi, Xu, Zhicheng, He, Li. Light-harvesting for high quantum efficiency in InAs-based InAs/GaAsSb type-II superlattices long wavelength infrared photodetectors. APPLIED PHYSICS LETTERS[J]. 2019, 第 3 作者114(14): 
[22] Xu JiaJia, Huang Min, Xu QingQing, Xu ZhiCheng, Wang FangFang, Bai ZhiZhong, Zhou Yi, Chen JianXin, He Li. Study on ICP dry etching of type II InAs/GaSb superlattices infrared focal plane arrays. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2019, 第 7 作者38(2): 171-174, 
[23] 周易, 柴旭良, 田源, 徐志成, 黄敏, 许佳佳, 黄爱波, 白治中, 陈红雷, 丁瑞军, 陈建新, 何力. InAs/GaAsSb带间级联中波红外焦平面研究. 红外与毫米波学报[J]. 2019, 第 1 作者38(6): 745-750, http://lib.cqvip.com/Qikan/Article/Detail?id=7100567330.
[24] Tian Yuan, Zhou Yi, Chai XuLiang, Xu ZhiCheng, Chen JianXin, He Li. Structural design of long wavelength interband cascade photodetectors. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2018, 第 2 作者  通讯作者  37(6): 734-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000455098300017.
[25] Tang, Yicheng, Wu, Feng, Chen, Fansheng, Zhou, Yi, Wang, Peng, Long, Mingsheng, Zhou, Wenjia, Ning, Zhijun, He, Jiawei, Gong, Fan, Zhu, Zhihong, Qin, Shiqiao, Hu, Weida. A Colloidal-Quantum-Dot Infrared Photodiode with High Photoconductive Gain. SMALL[J]. 2018, 第 4 作者  通讯作者  14(48): https://www.webofscience.com/wos/woscc/full-record/WOS:000451566800014.
[26] 田源, 周易, 柴旭良, 徐志成, 陈建新, 何力. 长波带间级联探测器结构设计. 红外与毫米波学报[J]. 2018, 第 2 作者37(6): 734-739,745, http://lib.cqvip.com/Qikan/Article/Detail?id=7000993161.
[27] Xu, Zhicheng, Chen, Jianxin, Wang, Fangfang, Zhou, Yi, He, Li. High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2017, 第 4 作者32(5): http://202.127.2.71:8080/handle/181331/12275.
[28] 靳川, 许佳佳, 黄爱波, 徐志成, 周易, 白治中, 王芳芳, 陈建新, 陈洪雷, 丁瑞军, 何力. InAs/GaSb II类超晶格长波红外探测器的实时γ辐照效应. 红外与毫米波学报[J]. 2017, 第 5 作者36(6): 688-693, http://journal.sitp.ac.cn/hwyhmb/hwyhmbcn/article/abstract/170020?st=article_issue.
[29] Wang, Fangfang, Chen, Jianxin, Xu, Zhicheng, Zhou, Yi, He, Li. Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection. OPTICS EXPRESS[J]. 2017, 第 4 作者25(3): 1629-1635, http://202.127.2.71:8080/handle/181331/12290.
[30] Xu, Zhicheng, Chen, Jianxin, Wang, Fangfang, Zhou, Yi, Bai, Zhizhong, Xu, Jiajia, Xu, Qingqing, Jin, Chuan, He, Li. MBE growth and characterization of type-II InAs/GaSb superlattices LWIR materials and photodetectors with barrier structures. JOURNAL OF CRYSTAL GROWTH[J]. 2017, 第 4 作者477: 277-282, http://dx.doi.org/10.1016/j.jcrysgro.2017.03.041.
[31] Jin Chuan, Xu JiaJia, Huang AiBo, Xu ZhiCheng, Zhou Yi, Bai ZhiZhong, Wang FangFang, Chen JianXin, Chen HongLei, Ding RuiJun, He Li. Real-time gamma irradiation effects on long-wavelength InAs/GaSb Type II superlattice infrared detector. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2017, 第 5 作者36(6): 688-693, https://www.webofscience.com/wos/woscc/full-record/WOS:000419930500009.
[32] 靳川, 许佳佳, 黄爱波, 徐志成, 周易, 白治中, 王芳芳, 陈建新, 陈洪雷, 丁瑞军, 何力. InAs/GaSb Ⅱ类超晶格长波红外探测器的实时γ辐照效应. 红外与毫米波学报[J]. 2017, 第 5 作者36(6): 688-693, http://lib.cqvip.com/Qikan/Article/Detail?id=674194406.
[33] Zhou, Yi, Chen, Jianxin, Xu, Zhicheng, He, Li. High quantum efficiency mid-wavelength interband cascade infrared photodetectors with one and two stages. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2016, 第 1 作者31(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000380223200013.
[34] Zhou Yi, ChenJianxin, Xu Zhicheng, HeLi, Andresen BF, Fulop GF, Hanson CM, Norton PR. High operation temperature mid-wavelength interband cascade infrared photodetectors grown on InAs substrate. INFRARED TECHNOLOGY AND APPLICATIONS XLII. 2016, 第 1 作者9819: 
[35] 黄亮, 李志锋, 周易, 陈建新, 陆卫. InAs/GaSb二类超晶格红外探测器的瞬态光伏响应特性. 红外与毫米波学报[J]. 2015, 第 3 作者34(2): 166-171, http://journal.sitp.ac.cn/hwyhmb/hwyhmbcn/article/abstract/140038?st=article_issue.
[36] Wang, Fangfang, Chen, Jianxin, Xu, Zhicheng, Zhou, Yi, He, Li. InAs-based InAs/GaAsSb type-II superlattices: Growth and characterization. JOURNAL OF CRYSTAL GROWTH[J]. 2015, 第 4 作者416: 130-133, http://dx.doi.org/10.1016/j.jcrysgro.2015.01.036.
[37] Huang Liang, Li ZhiFeng, Zhou Yi, Chen JianXin, Lu Wei. Transient photovoltaic responses in InAs/GaSb type- II superlattice infrared photodetectors. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2015, 第 3 作者34(2): 166-171, https://www.webofscience.com/wos/woscc/full-record/WOS:000354596000008.
[38] Bai ZhiZhong, Xu ZhiCheng, Zhou Yi, Yao HuaCheng, Chen HongLei, Chen JianXin, Ding RuiJun, He Li. 320 x 256 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2015, 第 3 作者34(6): 716-720, https://www.webofscience.com/wos/woscc/full-record/WOS:000367863500015.
[39] 白治中, 徐志成, 周易, 姚华城, 陈洪雷, 陈建新, 丁瑞军, 何力. 320×256元InAs/GaSb II类超晶格中波红外双色焦平面探测器. 红外与毫米波学报[J]. 2015, 第 3 作者34(6): 716-720, http://journal.sitp.ac.cn/hwyhmb/hwyhmbcn/article/abstract/140641?st=article_issue.
[40] Zhou Yi, Chen Jianxin, Wang Fangfang, Xu Zhicheng, Bai Zhizhong, Jin Chuan, He Li, Dhar NK, Dutta AK. Studies on abrupt and gradual band gap hole barriers in InAs/GaSb superlattice long wavelength photodetectors. IMAGE SENSING TECHNOLOGIES: MATERIALS, DEVICES, SYSTEMS, AND APPLICATIONS II. 2015, 第 1 作者9481: 
[41] Zhou Yi, Chen Jianxin, Wang Fangfang, Xu Zhicheng, Bai Zhizhong, Jin Chuan, He Li, Du X, Fan D, Le J, Lv Y, Yao J, Bao W, Wang L. High performance InAs/GaSb superlattice long wavelength photodetectors based on barrier enhanced structures. SELECTED PAPERS FROM CONFERENCES OF THE PHOTOELECTRONIC TECHNOLOGY COMMITTEE OF THE CHINESE SOCIETY OF ASTRONAUTICS 2014, PT II. 2015, 第 1 作者9522: 
[42] Xu JiaJia, Chen JianXin, Zhou Yi, Xu QingQing, Wang FangFang, Xu ZhiCheng, Bai ZhiZhong, Jin Chuan, Chen HongLei, Ding RuiJun, He Li. 320 x 256 long wavelength infrared focal plane arrays based on type- II InAs/GaSb superlattice. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2014, 第 3 作者33(6): 598-601, https://www.webofscience.com/wos/woscc/full-record/WOS:000347741900005.
[43] Chen, Xiren, Zhou, Yi, Zhu, Liang, Qi, Zhen, Xu, Qingqing, Xu, Zhicheng, Guo, Shaoling, Chen, Jianxin, He, Li, Shao, Jun. Evolution of interfacial properties with annealing in InAs/GaSb superlattice probed by infrared photoluminescence. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2014, 第 2 作者53(8): 082201, https://www.webofscience.com/wos/woscc/full-record/WOS:000341479100008.
[44] Xu, Zhicheng, Chen, Jianxin, Wang, Fangfang, Zhou, Yi, Jin, Chuan, He, Li. Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH[J]. 2014, 第 4 作者386: 220-225, http://dx.doi.org/10.1016/j.jcrysgro.2013.10.024.
[45] Zhou Yi, Chen Jianxin, Xu Zhicheng, Wang Fangfang, Xu Qingqing, Xu Jiajia, Bai Zhizhong, Jin Chuan, He Li. High Performance Long Wavelength Superlattice Photodetectors Based on Be Doped Absorber Region. 中国物理快报:英文版[J]. 2014, 第 1 作者149-152, http://lib.cqvip.com/Qikan/Article/Detail?id=662645525.
[46] Xu, Zhicheng, Chen, Jianxin, Wang, Fangfang, Zhou, Yi, Jin, Chuan, Xu, Qingqing, He, Li. High quality mid-wavelength infrared InAs/GaSb superlattices by exploring the optimum molecular beam epitaxy growth process. INFRARED PHYSICS & TECHNOLOGY[J]. 2014, 第 4 作者67: 8-13, http://dx.doi.org/10.1016/j.infrared.2014.05.020.
[47] ZHOUYi, CHENJianXin, XUZhiCheng, WANGFangFang, XUQingQing, XUJiaJia, BAIZhiZhong, JINChuan, HELi. High Performance Long Wavelength Superlattice Photodetectors Based on Be Doped Absorber Region. Chinese Physics Letters[J]. 2014, 第 1 作者31(10): 108503-108503, https://cpl.iphy.ac.cn/10.1088/0256-307X/31/10/108503.
[48] Zhou Yi, Chen JianXin, He Li. Band structure calculation of InAs/GaSb superlattice under 4 layers model. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2013, 第 1 作者  通讯作者  32(1): 13-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000317156000003.
[49] Chen, Jianxin, Zhou, Yi, Xu, Zhicheng, Xu, Jiajia, Xu, Qingqing, Chen, Honglei, He, Li. InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH[J]. 2013, 第 2 作者378: 596-599, http://dx.doi.org/10.1016/j.jcrysgro.2012.12.113.
[50] Zhou Yi, Chen JianXin, Xu QingQing, Xu ZhiCheng, Jin Chuan, Xu JiaJia, Jin JuPeng, He Li. Long wavelength infrared detector based on Type-II InAs/GaSb superlattice. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2013, 第 1 作者  通讯作者  32(3): 210-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000321722400004.
[51] Chen Jianxin, Quan Li, Xu Zhicheng, Zhou Yi, Xu Jiajia, Ding Ruijun, He Li, IEEE. Fabrication and Characterization of InAs/GaSb Strained Layer Superlattice Infrared Focal Plane Array Detectors. 2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ). 2013, 第 4 作者
[52] Xu Zhicheng, Chen Jianxin, Wang Fangfang, Zhou Yi, Xu Qingqing, Jin Chuan, Li He, Gong H, Shi Z, Chen Q, Lu J. Interface design and properties in InAs/GaSb type-II superlattices grown by molecular beam epitaxy. INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2013: INFRARED IMAGING AND APPLICATIONS. 2013, 第 4 作者8907: 
[53] Xu JiaJia, Jin JuPeng, Xu QingQing, Xu ZhiCheng, Jin Chuan, Zhou Yi, Chen HongLei, Lin Chun, Chen JianXin, He Li. 128 x 128 infrared focal plane arrays based on Type-II InAs/GaSb superlattice. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2012, 第 6 作者31(6): 501-504, 
[54] Xu Zhicheng, Chen Jianxin, Xu Qingqing, Zhou Yi, Jin Chuan, Wang Fangfang, He Li, Jiang Y, Yu J, Wang Z. The accurate measurement of background carrier concentration in short-period longwave InAs/GaSb superlattices on GaSb substrate. 6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING, IMAGING, AND SOLAR ENERGY. 2012, 第 4 作者8419: 
[55] 徐庆庆, 陈建新, 周易, 李天兴, 金巨鹏, 林春, 何力. InAs/GaSbⅡ类超晶格中波红外探测器. 红外与激光工程[J]. 2012, 第 3 作者41(1): 7-9,42, http://lib.cqvip.com/Qikan/Article/Detail?id=40872053.
[56] 许佳佳, 金巨鹏, 徐庆庆, 徐志成, 靳川, 周易, 陈洪雷, 林春, 陈建新, 何力. 128×128元InAs/GaSb II类超晶格红外焦平面探测器. 红外与毫米波学报[J]. 2012, 第 6 作者31(6): 501-504, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=4715103&detailType=1.
[57] Zhou, Yi, Chen, Jianxin, Xu, Qingqing, He, Li. Studies on InAs/GaSb superlattice structural properties by high resolution x-ray diffraction. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B[J]. 2012, 第 1 作者30(5): http://www.irgrid.ac.cn/handle/1471x/596167.
[58] Zhou Yi, Chen Jianxin, Xu Qingqing, He Li, Puschell JJ, Chu J, Gong H, Lu J. X-ray diffraction analysis of high quality InAs/GaSb Type II Superlattices grown by MBE. INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2011: ADVANCES IN INFRARED IMAGING AND APPLICATIONS. 2011, 第 1 作者8193: 
[59] Chen, Jianxin, Xu, Qingqing, Zhou, Yi, Jin, Jupeng, Lin, Chun, He, Li. Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors. NANOSCALE RESEARCH LETTERS[J]. 2011, 第 3 作者6: https://www.webofscience.com/wos/woscc/full-record/WOS:000300301500001.
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科研活动

   
科研项目
( 1 ) 基于带间级联结构的室温近室温红外探测器机理研究, 负责人, 国家任务, 2015-01--2017-12
( 2 ) 超晶格探测材料的位错密度抑制机理研究, 负责人, 地方任务, 2014-01--2016-12
( 3 ) 新型非制冷中波红外带间级联探测器研究, 参与, 国家任务, 2016-01--2020-12
( 4 ) 中国科学院青年促进会会员资助, 负责人, 中国科学院计划, 2016-01--2019-12
( 5 ) 中红外高速探测器, 负责人, 国家任务, 2018-11--2020-12
( 6 ) 特殊科技领域青年托举人才计划, 负责人, 国家任务, 2019-01--2022-12
( 7 ) 上海市青年科技启明星, 负责人, 地方任务, 2020-06--2023-05
( 8 ) 基于带间级联结构的中红外高速探测器研究, 负责人, 国家任务, 2020-01--2023-12
( 9 ) 中科院青促会优秀会员, 负责人, 中国科学院计划, 2021-01--2023-12
( 10 ) 锑化物红外光电探测器, 负责人, 国家任务, 2023-01--2025-12