General

Associate Prof. Zhenxing Wang,


National Center for Nanoscience and Technology,

No. 11, Beiyitiao, Zhongguancun, Beijing, China 100190

Email: wangzx@nanoctr.cn




Research Areas

Low dimensional semiconductors: design, fabrication, properties and optoelectronic devices

Education

2002.07 2009.03  Ph. D., Heifei National Laboratory for Physical Sciences at the Microscale, USTC.

2006.02 2006.08  Visit student, Dept. of Electrical and Computer Engineering, University of Alberta, Canada.

1998.09 2002.06  B.S., Dept. of Applied Chemistry, University of Science and Technology of China (USTC) .

Experience

   
Work Experience

2013.07  -  Present   Associate Prof., National Center for Nanoscience and Technology, China.

2011.07 2013.06  Assistant Prof., National Center for Nanoscience and Technology, China.

2009.04 2011.06  Postdoctoral Fellow, College of Chemistry and Molecular Engineering, Peking University, China.

Publications


  1. F. Wang,Z. X. Wang*, T. A. Shifa, Y. Wen, F. M. Wang, X. Y. Zhan, Q. S. Wang, K. Xu, Y. Huang, L. Yin, Chao J. and J. He*, Two-dimensional non-layered materials: synthesis, properties and applications, Adv. Function. Mater.2016, DOI: 10.1002/adfm.201603254.

  2. Z. X. Wang, F. Wang, L. Yin, Y. Huang, K. Xu, F. M. Wang, X. Y. Zhan and J. He*, Electrostatically tunable lateral MoTe2p-n junction for use in high-performance optoelectronics, Nanoscale2016, 8, 13245.

  3. L. Yin, X. Y. Zhan, K. Xu, F. Wang,Z. X. Wang*, Y. Huang, Q. S. Wang, C. Jiang and J. He*, Ultrahigh Sensitive MoTe2Phototransistors Driven by Carrier Tunneling,Appl. Phys. Lett.2016, 108, 043503. 

  4. Y. Huang, X. Y. Zhan, K. Xu, L. Yin, Z. Z. Cheng, C. Jiang,Z. X. Wang*and J. He*, Highly sensitive photodetectors based on 2D-0D SnS2-CIS quantum dots hybrid,Appl. Phys. Lett.2016,108, 013101.

  5. F. Wang,Z. X. Wang,*Q. S. Wang, F. M. Wang, L. Yin, K. Xu, Y. Huang and J. He*, Synthesis, properties and applications of 2D non-graphene materials,Nanotechnology2015, 26, 292001, Invited Review.

  6. Z. X. Wang, M. Safdar, M. Mirza, K. Xu, Q. S. Wang, Y. Huang, F. M. Wang, X. Y. Zhan and J. He*, High-performance flexible photodetectors based on GaTe nanosheets,Nanoscale2015,7, 7252-7258.

  7. F. Wang,Z. X. Wang, K. Xu, F. M. Wang, Q. S. Wang, Y. Huang, L. Yin, and J. He*, Tunable GaTe-MoS2van der Waals p-n junctions with novel optoelectronic performance,Nano Lett.2015, 15, 7558.

  8. K. Xu,Z. X. Wang, F. Wang, Y. Huang, F. M. Wang, L. Yin, C. Jiang and J. He*, Ultrasensitive Phototransistors Based on Few-Layered HfS2,Adv. Mater.2015, 27, 7881.

  9. Z. X. Wang, K. Xu, Y. C. Li, X. Y. Zhan, M. Safdar, Q. S. Wang, F. M. Wang, and J. He*, Role of Ga Vacancy on a Multilayer GaTe Phototransistor,ACS Nano2014, 8, 4859.

  10. J. D. Wang,Z. X. Wang(co-first author), Q. C. Li, L. Gan, X. J. Xu, L. D. Li*, and X. F. Guo*, Revealing Interface-Assisted Charge Transfer Mechanisms Using Silicon Nanowires as Local Probes,Angew. Chem. Int. Ed.2013, 52, 3369.

  11. K. Xu,Z. X. Wang(co-first author), X. L. Du, M. Safdar, C. Jiang and J. He*, Atomic-layer triangular WSe2sheets: synthesis and layer-dependent photoluminescence property,Nanotechnology2013, 24, 465705.

  12. Z. X. Wang, M. Safdar, C. Jiang, and J. He*, High-Performance UV-Visible-NIR Broad Spectral Photodetectors Based on One-Dimensional In2Te3Nanostructures,Nano Lett.2012, 12, 4715.