Associate Prof. Zhenxing Wang,
National Center for Nanoscience and Technology,
No. 11, Beiyitiao, Zhongguancun, Beijing, China 100190
Email: wangzx@nanoctr.cn
Research Areas
Low dimensional semiconductors: design, fabrication, properties and optoelectronic devices
Education
2002.07 -2009.03 Ph. D., Heifei National Laboratory for Physical Sciences at the Microscale, USTC.
2006.02 -2006.08 Visit student, Dept. of Electrical and Computer Engineering, University of Alberta, Canada.
1998.09 -2002.06 B.S., Dept. of Applied Chemistry, University of Science and Technology of China (USTC) .
Experience
Work Experience
2013.07 - Present Associate Prof., National Center for Nanoscience and Technology, China.
2011.07 -2013.06 Assistant Prof., National Center for Nanoscience and Technology, China.
2009.04 -2011.06 Postdoctoral Fellow, College of Chemistry and Molecular Engineering, Peking University, China.
Publications
F. Wang,Z. X. Wang*, T. A. Shifa, Y. Wen, F. M. Wang, X. Y. Zhan, Q. S. Wang, K. Xu, Y. Huang, L. Yin, Chao J. and J. He*, Two-dimensional non-layered materials: synthesis, properties and applications, Adv. Function. Mater.2016, DOI: 10.1002/adfm.201603254.
Z. X. Wang, F. Wang, L. Yin, Y. Huang, K. Xu, F. M. Wang, X. Y. Zhan and J. He*, Electrostatically tunable lateral MoTe2p-n junction for use in high-performance optoelectronics, Nanoscale2016, 8, 13245.
L. Yin, X. Y. Zhan, K. Xu, F. Wang,Z. X. Wang*, Y. Huang, Q. S. Wang, C. Jiang and J. He*, Ultrahigh Sensitive MoTe2Phototransistors Driven by Carrier Tunneling,Appl. Phys. Lett.2016, 108, 043503.
Y. Huang, X. Y. Zhan, K. Xu, L. Yin, Z. Z. Cheng, C. Jiang,Z. X. Wang*and J. He*, Highly sensitive photodetectors based on 2D-0D SnS2-CIS quantum dots hybrid,Appl. Phys. Lett.2016,108, 013101.
F. Wang,Z. X. Wang,*Q. S. Wang, F. M. Wang, L. Yin, K. Xu, Y. Huang and J. He*, Synthesis, properties and applications of 2D non-graphene materials,Nanotechnology2015, 26, 292001, Invited Review.
Z. X. Wang, M. Safdar, M. Mirza, K. Xu, Q. S. Wang, Y. Huang, F. M. Wang, X. Y. Zhan and J. He*, High-performance flexible photodetectors based on GaTe nanosheets,Nanoscale2015,7, 7252-7258.
F. Wang,Z. X. Wang, K. Xu, F. M. Wang, Q. S. Wang, Y. Huang, L. Yin, and J. He*, Tunable GaTe-MoS2van der Waals p-n junctions with novel optoelectronic performance,Nano Lett.2015, 15, 7558.
K. Xu,Z. X. Wang, F. Wang, Y. Huang, F. M. Wang, L. Yin, C. Jiang and J. He*, Ultrasensitive Phototransistors Based on Few-Layered HfS2,Adv. Mater.2015, 27, 7881.
Z. X. Wang, K. Xu, Y. C. Li, X. Y. Zhan, M. Safdar, Q. S. Wang, F. M. Wang, and J. He*, Role of Ga Vacancy on a Multilayer GaTe Phototransistor,ACS Nano2014, 8, 4859.
J. D. Wang,Z. X. Wang(co-first author), Q. C. Li, L. Gan, X. J. Xu, L. D. Li*, and X. F. Guo*, Revealing Interface-Assisted Charge Transfer Mechanisms Using Silicon Nanowires as Local Probes,Angew. Chem. Int. Ed.2013, 52, 3369.
K. Xu,Z. X. Wang(co-first author), X. L. Du, M. Safdar, C. Jiang and J. He*, Atomic-layer triangular WSe2sheets: synthesis and layer-dependent photoluminescence property,Nanotechnology2013, 24, 465705.
Z. X. Wang, M. Safdar, C. Jiang, and J. He*, High-Performance UV-Visible-NIR Broad Spectral Photodetectors Based on One-Dimensional In2Te3Nanostructures,Nano Lett.2012, 12, 4715.