Research field: Research on heavy ion irradiation effects of low dimensional materials and new devices made of low dimensional materials. Emphasis will be placed on the radiation damage in one-dimensional carbon nanotubes and two-dimensional new materials represented by graphene. Research on radiation effects will be conducted on new devices constructed from different low dimensional materials, such as the radiation effects and reliability of graphene field-effect transistors, carbon nanotube field-effect transistors, and 6T SRAM unit circuits. Research on radiation modification of graphene gas detectors and graphene/molybdenum sulfide heterojunction optoelectronic devices will also be conducted.

With the continuous development of preparation technology, the device size is constantly shrinking and will soon reach the limit of Si materials. Low dimensional materials represented by carbon nanotubes and graphene have natural physical size advantages, which can exceed the physical limits of silicon-based devices, and have simpler processes, higher integration, and lower power consumption. They can solve the leakage and heat dissipation problems of existing silicon-based chips, and are considered one of the disruptive technologies in the post Moore's era. They have been included in the 14th Five Year Plan. However, the introduction of new materials, structures, and mechanisms also poses new challenges for the study of radiation damage effects in devices. Therefore, conducting research on the radiation effects and reliability of low-dimensional materials and chips in key areas can promote the innovation and development of domestically produced highly reliable chip products and independent support capabilities, and efficiently support intergenerational upgrades of technical equipment.

The Lanzhou Heavy Ion Accelerator (HIRFL) is a heavy ion research facility with the largest scale, the most accelerated ion types and the highest energy in China. Its main technical indicators have reached the international advanced level, and it is one of several important nuclear physics research facilities in the world. As an advanced national major scientific and technological infrastructure, HIRFL can offer various kinds of swift heavy ions with energy of MeV to GeV to simulate the space radiation environment and investigate the irradiation effects of low dimensional materials and new devices made of low dimensional materials. Various high resolution material analysis methods such as atomic force microscopy, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, etc. could be used to analyze the irradiation damage in materials and explore the interaction between ions and materials. Comprehensively and systematically study the effects of different ion types, ion energies, electron loss, ion fluence, and charge states on irradiation effects in low dimensional materials. Compare the changes in electrical performance of devices with different structures before and after irradiation, and explore the inherent relationship between radiation damage and device performance changes. Identify the key factors causing performance degradation and provide important data for radiation resistant reinforcement design. Revealing the radiation damage mechanism of the low dimensional materials devices provides important theoretical and experimental data support for the application of new generation devices in aerospace or other irradiation environment.

2009.09—2014.06 Lanzhou University, Doctor's degree

2005.09—2009.07   Southwest University, Bachelor degree

   

2024.05— Now, Institute of Modern Physics, Chinese Academy of Sciences,  Researcher

2021.05 — 2026.04, Institute of Modern Physics, Chinese Academy of Sciences, Young Researcher

2016.11 — 2024.04, Institute of Modern Physics,Chinese Academy of Sciences, Associate Professor

2014.07 —2016.10, Institute of Modern Physics,Chinese Academy of Sciences, Research Assistant

[1]  J. Zeng*, C.B. Nie, H.D. Zhang, P.P. Hu, K. Maaz, L.J. Xu, P.F. Zhai, X.R. Yang, S.X. Zhang*, J. Liu*, Optimized photoelectric performance of MoS₂/graphene heterostructure device induced by swift heavy ion irradiation, Appl Surf Sci, 642 (2024) 158629

[2] J. Zeng*, P. Ma, S. Zhang, L. Xu, Z. Li, P. Zhai, P. Hu, K. Maaz, Y.M. Sun, J. Liu*, Unrecovered ion-irradiated damage after thermal annealing in graphene field effect transistors, Appl Surf Sci, 588 (2022) 153005.

[3] J. Zeng*, J. Liu*, S. Zhang, J. Duan, P. Zhai, H. Yao, P. Hu, K. Maaz, Y. Sun, Graphene electrical properties modulated by swift heavy ion irradiation, Carbon, 154 (2019) 244-253.

[4] P. Ma, J. Zeng*, X. Yan, P. Hu, S. Zhang, M. Khan, J. Liu*, Significant enhancement in sensitivity of graphene gas detectors induced by highly charged ion irradiation, Nucl Instrum Methods Phys Res, Sect B, 522 (2022) 14-20.

[5] S.X. Zhang, P.P. Hu, L.J. Xu, H.L. Chen, K. Maaz, P.F. Zhai, Z.Z. Li, L. Liu, W.S. Ai, J. Zeng*, J. Liu*, Exciton Transitions in Monolayer WS2 Activated by Swift Heavy Ion Irradiation, J Phys Chem C, 125 (2021) 20389-20396.

[6] S.X. Zhang*, J. Zeng, P.P. Hu, L.J. Xu, K. Maaz, Z.Z. Li, L. Liu, P.F. Zhai, W.S. Ai, J. Liu*, Effects of substrate on swift heavy ion irradiation induced defect engineering in MoSe₂, Mater Chem Phys, 277 (2022) 125624.

[7] P.P. Hu, J. Zeng, S.X. Zhang, P.F. Zhai, L.J. Xu, W.S. Ai, K. Maaz, H.Z. Xue, Z.Z. Li, Y.M. Sun, J. Liu*, Y. He, A potential lattice damage scale in swift heavy ion irradiated InP, J Raman Spectrosc, 52 (2021) 971-979.

[8] H. Yao*, J. Zeng, P. Zhai, Z. Li, Y. Cheng, J. Liu, D. Mo, J. Duan, L. Wang, Y. Sun, J. Liu*, Large Rectification Effect of Single Graphene Nanopore Supported by PET Membrane, ACS Appl Mater Interfaces, 9 (2017) 11000-11008.

[9] D.L. Cao, T.M. Zhang, J. Zeng, L. Cai, X.F. Pu, J.M. Qian, D.Q. Gao, J. Liu*, Fe¹³⁺-ion irradiated WS₂ with multi-vacancies and Fe dopants for hydrogen evolution reaction, FlatChem, 27 (2021) 100247.

[10] L. Liu, J. Liu*, J. Zeng, P.-F. Zhai, S.-X. Zhang, L.-J. Xu, P.-P. Hu, Z.-Z. Li, W.-S. Ai, Effect of swift heavy ions irradiation on the microstructure and current-carrying capability in YBa₂Cu₃O_7-δ high temperature superconductor films, Acta Phys Sin-ch Ed, 69 (2020) 077401.

[11] S.X. Zhang*, J. Liu, J. Zeng, P.P. Hu, K. Maaz, L.J. Xu, J.L. Duan, P.F. Zhai, Z.Z. Li, L. Liu*, Electronic transport in MoSe₂ FETs modified by latent tracks created by swift heavy ion irradiation, J Phys D: Appl Phys, 52 (2019) 125102.

[12] S.X. Zhang*, J. Liu*, J. Zeng, P.P. Hu, L.J. Xu, K. Maaz, P.F. Zhai, J.L. Duan, Dynamic evolutions of swift heavy ion induced latent tracks under electron bombardment from TEM, Nucl Instrum Methods Phys Res, Sect B, 429 (2018) 9-13.

[13] S.X. Zhang*, J. Liu*, J. Zeng, P.P. Hu, P.F. Zhai, Structural modification in swift heavy ion irradiated muscovite mica, Chin Phys B, 26 (2017) 106102.

[14] L. Liu, J. Liu*, P. Zhai, S. Zhang, J. Zeng, P. Hu, L. Xu, Z. Li, The variation of pinning efficiency in YBCO films containing columnar defects, Physica C: Superconductivity and its Applications, 592 (2022) 1354000.

[15] P.P. Hu, L.J. Xu, P.F. Zhai, J. Zeng, S.X. Zhang, K. Maaz, W.S. Ai, Z.Z. Li, Y.M. Sun, Y. He, J. Liu*, Evidence of defect‐annealing effect in swift heavy‐ion‐irradiated indium phosphide, J Raman Spectrosc, 53 (2022) 1003-1011.

[16] L. Liu*, J. Liu*, S.X. Zhang, J. Zeng, P.F. Zhai, P.P. Hu, L.J. Xu, Z.Z. Li, W.S. Ai, C.B. Cai, M.J. Li, Radiation effect of swift heavy ions on current-carrying capability of commercial YBCO coated conductors, Appl Phys A-mater, 126 (2020) 435.

[17] L.J. Xu, P.F. Zhai*, S.X. Zhang, J. Zeng, P.P. Hu, Z.Z. Li, L. Liu, Y.M. Sun, J. Liu*, Characterization of swift heavy ion tracks in MoS₂ by transmission electron microscopy*, Chin Phys B, 29 (2020) 106103.

[18] S.X. Zhang*, J. Liu*, P.P. Hu, J. Zeng, K. Maaz, P.F. Zhai, J.L. Duan, H.J. Yao, Y.M. Sun, M.D. Hou, Investigations of nano-defect morphology and vibrational spectra of swift heavy ion irradiated muscovite mica, Surface and Coatings Technology, 355 (2018) 186-190.

[19] S. Zhang*, L. Xu, P. Hu, K. Maaz, J. Zeng, P. Zhai, Z. Li, L. Liu, J. Liu*, Excitonic performance and ultrafast dynamics in defective WSe₂, Appl Phys Lett, 121 (2022) 083102.

[20] H. Latif*, J. Liu, D. Mo, R. Wang, J. Zeng, P.F. Zhai, A. Sattar, Effect of Target Morphology on Morphological, Optical and Electrical Properties of FTO Thin Film Deposited by Pulsed Laser Deposition for MAPbBr3 Perovskite Solar Cell, Surf Interfaces, 24 (2021) 101117.

[21] P.P. Hu, J. Liu*, S.X. Zhang, K. Maaz, J. Zeng, P.F. Zhai, L.J. Xu, Y.R. Cao, J.L. Duan, Z.Z. Li, Y.M. Sun, X.H. Ma, Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks, Nucl Instrum Methods Phys Res, Sect B, 430 (2018) 59-63.

[22] S.X. Zhang*, J. Liu*, H. Xie, L.J. Xu, P.P. Hu, J. Zeng, Z.Z. Li, L. Liu, W.S. Ai, P.F. Zhai, Vibrational modes in La₂Zr₂O₇ pyrochlore irradiated with disparate electrical energy losses, Chin Phys B, 28 (2019) 116102.

[23] W.-S. Ai, J. Liu*, Q. Feng*, P.-F. Zhai, P.-P. Hu, J. Zeng, S.-X. Zhang, Z.-Z. Li, L. Liu, X.-Y. Yan, Y.-M. Sun, Degradation of β-Ga₂O₃ Schottky barrier diode under swift heavy ion irradiation*, Chin Phys B, 30 (2021) 056110.

[24] P. Zhai*, S. Nan, L. Xu, W. Li, Z. Li, P. Hu, J. Zeng, S. Zhang, Y. Sun, J. Liu*, Fine structure of swift heavy ion track in rutile TiO₂, Nucl Instrum Methods Phys Res, Sect B, 457 (2019) 72-79.

[25] Z. Li, J. Liu*, P. Zhai, L. Liu, L. Xu, S. Zhang, P. Hu, J. Zeng, The higher-k phase formation in amorphous HfO₂ films by swift heavy ion irradiation, J Cryst Growth, 585 (2022) 126600.

[26] L. Xu, R.A. Rymzhanov, P. Zhai*, S. Zhang, P. Hu, X. Meng, J. Zeng, Y. Sun, J. Liu*, Direct Fabrication of Sub-10 nm Nanopores in WO₃ Nanosheets Using Single Swift Heavy Ions, Nano Lett, 23 (2023) 4502-4509.

[27] Y. Dong, Y. Cheng, G. Xu, H. Cheng, K. Huang, J. Duan, D. Mo, J. Zeng, J. Bai, Y. Sun, J. Liu*, H. Yao*, Selectively Enhanced Ion Transport in Graphene Oxide Membrane/PET Conical Nanopore System, ACS Appl Mater Inter, 11 (2019) 14960-14969.

[28] W. Ai, L. Xu, S. Nan, P. Zhai*, W. Li, Z. Li, P. Hu, J. Zeng, S. Zhang, L. Liu, Y. Sun, J. Liu*, Radiation damage in β-Ga₂O₃ induced by swift heavy ions, Jpn J Appl Phys, 58 (2019) 120914.

[29] Z.Z. Li, J. Liu*, P.F. Zhai*, T.Q. Liu, J.S. Bi, Z.X. Zhang, S.X. Zhang, P.P. Hu, L.J. Xu, J. Zeng, Y.M. Sun, Latent reliability degradation of ultrathin amorphous HfO₂ dielectric after heavy ion irradiation: the impact of nano-crystallization, IEEE Electr Device L, 40 (2019) 1634-1637.

1. A Method for Improving the Performance of Two-Dimensional Material Gas Detector, Invention Patent, 2021, 1st Author, Patent No.: 202110788850.2
2. A Target Chamber System with Main and Auxiliary Chamber Structure for Circuit Board Testing and Its Usage, Patent Granted, 2020, 10th Author, Patent No.: CN110618377B
3. Porous graphene composites with microporous support and preparation method thereof, Invention Patent, 2014, 2nd Author, Patent No.: CN103895278A

(1) Study on changes in electrical properties of graphene induced by charged heavy ion irradiation, presided over, national level, 2016.01—2018.12

(2) Phase transition study of geological materials under high-energy heavy ion irradiation under high pressure, participated in, national level, 2015.01—2017.12

(3) Preparation and application of graphene/polymer composite nanopores, national level, 2016.01—2019.12

(4) Interaction mechanism between particles and new nano-device materials, participation, national level, 2017.01—2021.12

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已指导学生

马鹏程  硕士研究生  085204-材料工程  

现指导学生

张宏达  硕士研究生  085600-材料与化工