基本信息
顾溢  男  博导  中国科学院上海技术物理研究所
电子邮件: guyi@mail.sitp.ac.cn
通信地址: 上海市玉田路500号
邮政编码:

研究领域

化合物半导体材料、器件与应用

教育背景

2004-09--2009-06   中国科学院上海微系统与信息技术研究所   博士
2000-09--2004-08   南京大学   学士

工作经历

   
工作简历
2018-09~现在, 中国科学院上海技术物理研究所, 研究员
2018-01~2018-09,中国科学院上海微系统与信息技术研究所, 研究员
2015-09~2016-02,英国谢菲尔德大学, 访问学者
2012-02~2012-04,瑞典查尔姆斯理工大学, 访问学者
2012-01~2017-12,中国科学院上海微系统与信息技术研究所, 副研究员
2009-06~2011-12,中国科学院上海微系统与信息技术研究所, 助理研究员

专利与奖励

   
奖励信息
(1) 上海市技术发明奖, 三等奖, 省级, 2015
(2) 上海市科技进步二等奖, 二等奖, 省级, 2012
专利成果
[1] 顾溢, 王红真, 张永刚, 邵秀梅, 李雪, 龚海梅. 一种基于气态源分子束外延的大失配InGaAs材料生长方法. CN: CN110205673B, 2021-01-01.

[2] 顾溢, 王红真, 马英杰, 张永刚, 邵秀梅, 李雪, 龚海梅. 表征InGaAs探测器材料缺陷与器件性能关联性的方法. CN: CN110987981A, 2020-04-10.

[3] 马英杰, 顾溢, 邵秀梅, 李雪, 龚海梅. 一种高均匀性单光子面光源的产生装置. CN: CN110927981A, 2020-03-27.

[4] 顾溢, 王红真, 马英杰, 张永刚, 邵秀梅, 李雪, 龚海梅. PIIN型高In组分InGaAs探测器材料结构和制备方法. CN: CN110896114A, 2020-03-20.

[5] 顾溢, 王红真, 杨波, 马英杰, 李淘, 邵秀梅, 李雪, 龚海梅. 一种多层InGaAs探测器材料结构和制备方法. CN: CN110896120A, 2020-03-20.

[6] 顾溢, 王红真, 张永刚, 邵秀梅, 李雪, 龚海梅. 一种柔性InGaAs探测器的制备方法. CN: CN110224045A, 2019-09-10.

[7] 马英杰, 顾溢, 邵秀梅, 李雪. 一种宽谱InGaAs雪崩焦平面探测器及其制造方法. CN: CN110047967A, 2019-07-23.

[8] 马英杰, 顾溢, 邵秀梅, 李雪. 一种InGaAs雪崩焦平面探测器的串扰抑制结构. CN: CN110021617A, 2019-07-16.

[9] 顾溢, 陈平平, 王文娟, 马英杰, 张永刚, 邵秀梅, 李雪, 龚海梅. 一种雪崩探测器过渡层结构及制备方法. CN: CN109473496A, 2019-03-15.

出版信息

   
发表论文
(1) Short-wave infrared real-time high dynamic range imaging and display based on correlated double sampling, APPLIED OPTICS, 2021, 第 4 作者
(2) Direct correlation of defects and dark currents of InGaAs/InP photodetectors, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 通讯作者
(3) Surface Leakage Behaviors of 2.6 mu m In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2020, 第 4 作者
(4) High electron mobility InP grown by solid source molecular beam epitaxy, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 通讯作者
(5) 短波红外InGaAs焦平面探测器研究进展, Developments of short-wave infrared InGaAs focal plane detectors, 红外与激光工程, 2020, 第 8 作者
(6) Real-Time Dynamic 3D Shape Reconstruction with SWIR InGaAs Camera, SENSORS, 2020, 第 7 作者
(7) Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer, INFRARED PHYSICS & TECHNOLOGY, 2020, 第 7 作者
(8) Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 通讯作者
(9) Ultra-low spectral reflectances of InP Mie resonators on an InGaAs/InP focal plane array, AIP ADVANCES, 2020, 第 4 作者
(10) 短波红外铟镓砷探测器材料表面缺陷研究, Research on Surface Defects of Short-Wave Infrared InGaAs Detector Materials, 红外, 2020, 第 5 作者
(11) 数字递变异变赝衬底上2.6μm In0.83Ga0.17As/InP光电探测器的性能改进, Improved performances of 2. 6 μm In0. 83 Ga0. 17 As /InP photodetectors on digitally-graded metamorphic pseudo-substrates, 红外与毫米波学报, 2019, 第 4 作者
(12) High performance In0.83Ga0.17As SWIR photodiode passivated by Al2O3/SiNx stacks with low-stress SiNx films, JOURNAL OF APPLIED PHYSICS, 2019, 第 6 作者
(13) Characterization and calibration of blind pixels in short-wave infrared InGaAs focal plane arrays, OPTICAL ENGINEERING, 2019, 第 5 作者
(14) Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2019, 
(15) Monolithically grown 2.5 mu m InGaAs photodetector structures on GaP and GaP/Si (001) substrates, MATERIALS RESEARCH EXPRESS, 2019, 通讯作者
(16) Frequency Response of Barrier Type 2.6 mu m In0.83Ga0.17As/In0.83Al0.17As Photodetectors on InP, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 通讯作者
(17) Improved performances of 2. 6 mu m In0.83Ga0.17 As/InP photodetectors on digitally-graded metamorphic pseudo-substrates, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2019, 通讯作者
(18) Anomalous arsenic diffusion at InGaAs/InP interface, MATERIALS RESEARCH EXPRESS, 2019, 通讯作者
(19) Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants, MATERIALS RESEARCH EXPRESS, 2019, 
(20) Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2019, 
(21) Towards Surface Leakage Free High Fill-Factor Extended Wavelength InGaAs Focal-Plane Arrays, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2019, 第 4 作者
(22) Monolithically grown 2.5 μmInGaAs photodetector structures on GaP and GaP/Si (001) substrates, Materials Research Express, 2019, 通讯作者
(23) Deep levels analysis in wavelength extended InGaAsBi photodetector, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 第 4 作者
(24) InGaAs/InP界面控制对InGaAs薄膜电学和光学性质的影响, Effects of InGaAs/InP interface control on the electrical and optical properties of InGaAs films, 红外与毫米波学报, 2019, 第 3 作者
(25) Electron-initiated low noise 1064 nm InGaAsP/InAlAs avalanche photodetectors, OPTICS EXPRESS, 2018, 第 3 作者
(26) Short-wave infrared InGaAs photodetectors and focal plane arrays, CHINESE PHYSICS B, 2018, 第 2 作者
(27) Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates, AIP ADVANCES, 2018, 
(28) Improved performance of In0.83Ga0.17As/InP photodetectors through modifying the position of In0.66Ga0.34As/InAs superlattice electron barrier, Infrared Physics and Technology, 2018, 第 4 作者
(29) Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2018, 通讯作者
(30) In0.83Ga0.17As photodetectors with different doping concentrations in the absorption layers, Infrared Physics and Technology, 2018, 
(31) Correction of FTIR acquired photodetector response spectra from mid-infrared to visible bands using onsite measured instrument function, INFRARED PHYSICS & TECHNOLOGY, 2018, 第 4 作者
(32) Wavelength extended InGaAsBi detectors with temperature-insensitive response wavelength’, Chinese Physics Letters, 2018, 第 1 作者
(33) Growth temperature optimization of GaAs-based In0.83Ga0.17As on InxAl1−xAs buffers, JOURNAL OF CRYSTAL GROWTH, 2018, 
(34) 3 mu m InAs quantum well lasers at room temperature on InP, APPLIED PHYSICS LETTERS, 2018, 
(35) IGA-rule 17 for performance estimation of wavelength extending InGaAs photodetectors: validity and limitations, Applied Optics, 2018, 第 1 作者
(36) Composition uniformity characterization and improvement of AlGaAs/GaAs grown by molecular beam epitaxy, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 通讯作者
(37) Improved performance of high indium InGaAs photodetectors with InAlAs barrier, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 通讯作者
(38) Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications, ADVANCED OPTICAL MATERIALS, 2017, 第 3 作者
(39) An effective indicator for evaluation of wavelength extending InGaAs photodetector technologies, INFRARED PHYSICS & TECHNOLOGY, 2017, 第 2 作者
(40) InP-based pseudomorphic InAs/InGaAs triangular quantum well lasers with bismuth surfactant., APPLIED OPTICS, 2017, 
(41) Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors, JOURNAL OF CRYSTAL GROWTH, 2017, 
(42) Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides, JOURNAL OF CRYSTAL GROWTH, 2017, 
(43) Anisotropic strain relaxation of Si-doped metamorphic InAlAs graded buffers on InP, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 第 1 作者
(44) 2.25-μm Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP, Photonics Technology Letters, 2017, 第 1 作者
(45) Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors, OPTICS EXPRESS, 2016, 第 3 作者
(46) Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP, APPLIED PHYSICS LETTERS, 2016, 
(47) Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission, APPLIED PHYSICS LETTERS, 2016, 
(48) FTIR测量的宽波数范围发射光谱强度校正, Correction of intensity of emission spectra in a wide wave number range measured by FTIR, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 第 4 作者
(49) Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors, JOURNAL OF CRYSTAL GROWTH, 2016, 
(50) InGaAsP/InP photodetectors targeting on 1.06 mu m wavelength detection, INFRARED PHYSICS & TECHNOLOGY, 2016, 
(51) Tailoring the performances of low operating voltage InAlAs/InGaAs avalanche photodetectors, OPTICS EXPRESS, 2015, 第 3 作者
(52) Effects of continuously graded or step-graded InxAl1−xAs buffer on the performance of InP-based In0.83Ga0.17As photodetectors, JOURNAL OF CRYSTAL GROWTH, 2015, 
(53) Effects of material parameters on the temperature dependent spectral response of In0.83Ga0.17As photodetectors, JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 
(54) Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells, APPLIED PHYSICS LETTERS, 2015, 
(55) FTIR测量的量子型光电探测器响应光谱校正, Correction of response spectra of quantum type photodetectors measured by FTIR, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2015, 第 3 作者
(56) Dark current suppression in metamorphic In0.83Ga0.17As photodetectors with In0.66Ga0.34As/InAs superlattice electron barrier, APPLIED PHYSICS EXPRESS, 2015, 第 1 作者
(57) Carrier scattering and relaxation dynamics in n-type In0.83Ga0.17As as a function of temperature and doping density, JOURNAL OF MATERIALS CHEMISTRY C, 2015, 第 2 作者
(58) InP-based type-I quantum well lasers up to 2.9 mu m at 230 K in pulsed mode on a metamorphic buffer, APPLIED PHYSICS LETTERS, 2015, 
(59) Low voltage and small gain slope InAlAs/InGaAs avalanche photodiodes with a moderate p-doped multiplication layer",, 2015, 第 1 作者
(60) Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 µm, Journal of Crystal Growth, 2015, 
(61) Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors, JOURNAL OF CRYSTAL GROWTH, 2015, 
(62) InPBi single crystals grown by molecular beam epitaxy., SCIENTIFIC REPORTS, 2014, 
(63) 2.4-μm InP-based antimony-free triangular quantum well lasers in continuous-wave operation above room temperature, Applied Physics Express, 2014, 第 1 作者
(64) Fabrication of column shape two dimensional photonic crystals by holographic lithography using double development, J. Infrared Millim. Waves, 2014, 第 1 作者
(65) Dark current characteristics of GaAs-based 2.6 mu m InGaAs photodetectors on different types of InAlAs buffer layers, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 
(66) GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2014, 
(67) Evaluation of the performance correlated defects of metamorphic InGaAs photodetector structures through plane-view EBIC, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 第 3 作者
(68) High performance InP-based InAs triangular quantum well lasers operating beyond 2 μm, Proc. of SPIE, 2014, 第 1 作者
(69) Improved Performance of 2.2-mu m InAs/InGaAs QW Lasers on InP by Using Triangular Wells, IEEE PHOTONICS TECHNOLOGY LETTERS, 2014, 第 3 作者
(70) Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy., NANOSCALE RESEARCH LETTERS, 2014, 第 1 作者
(71) Absorption coefficients of In0.8Ga0.2As at room temperature and 77 K, JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 
(72) The effect of the injector doping density on lasing properties of InAlAs-InGaAs-InP quantum cascade lasers at 4.3 um, Journal of Crystal Growth, 2013, 第 1 作者
(73) 2.7 mu m InAs quantum well lasers on InP-based InAlAs metamorphic buffer layers, APPLIED PHYSICS LETTERS, 2013, 
(74) InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 mu m, APPLIED PHYSICS LETTERS, 2013, 
(75) InP-based InxGa1-x As metamorphic buffers with different mismatch grading rates, JOURNAL OF SEMICONDUCTORS, 2013, 第 2 作者
(76) Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors, JOURNAL OF CRYSTAL GROWTH, 2013, 
(77) High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5, 2013, 
(78) Effects of compositional overshoot on InP-based InAlAs metamorphic graded buffer, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2013, 第 2 作者
(79) Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence, CHINESE PHYSICS B, 2013, 第 1 作者
(80) Analysis and evaluation of uniformity of SWIR InGaAs FPA - Part II: Processing issues and overall effects, INFRARED PHYSICS & TECHNOLOGY, 2013, 第 3 作者
(81) Type-I mid-infrared InAs/InGaAs quantum well lasers on InP-based metamorphic InAlAs buffers, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 
(82) Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4 um, Journal of Crystal Growth, 2013, 第 1 作者
(83) IMPROVING THE PERFORMANCE OF EXTENDED WAVELENGTH InGaAs PHOTODETECTORS BY USING DIGITAL GRADED HETEROINTERFACES SUPERLATTICE, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2009, 第 3 作者
(84) Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InA1As Superlattice *, Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InA1As Superlattice *, 中国物理快报:英文版, 2009, 第 1 作者
(85) Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice, CHINESE PHYSICS LETTERS, 2009, 通讯作者
(86) Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodetector structures on a linear graded InAlAs buffer, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 第 2 作者
(87) Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy, CHINESE PHYSICS LETTERS, 2008, 第 1 作者
(88) InP基In0.53Ga0.47As光电探测器的量子效率优化, QUANTUM EFFICIENCY OPTIMIZATION OF InP-BASED In0.53 Ga0.47 As PHOTODETECTORS, 红外与毫米波学报, 2008, 第 2 作者
(89) Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy, Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy, 中国物理快报:英文版, 2008, 第 1 作者
发表著作
(1) 气态源分子束外延生长的波长扩展InGaAs探测器, Gas Source MBE Grown Wavelength Extending InGaAs Photodetectors, Intech, 2011-11, 第 2 作者
(2) 特殊波长应用的Al(Ga)InP-GaAs探测器, Al(Ga)InP-GaAs photodiodes tailored for specific wavelength range, Intech, 2012-09, 第 2 作者
(3) 应用于中红外的稀铋材料, Dilute Bismides for Mid-IR Applications, Springer, 2013-09, 第 2 作者
(4) InP-based antimony-free MQW lasers in 2-3 µm band, Intech, 2015-07, 第 1 作者
(5) 《半导体光谱测试方法与技术》——半导体科学与技术丛书, 科学出版社, 2016-01, 第 2 作者
(6) “Epitaxy and device properties of InGaAs photodetectors with relatively high lattice mismatch” Chapter in “Epitaxy”, Intech, 2017-11, 第 2 作者