化合物半导体材料、器件与应用

   

080903-微电子学与固体电子学
070205-凝聚态物理

化合物半导体材料；半导体光电器件

2004-09--2009-06   中国科学院上海微系统与信息技术研究所   博士
2000-09--2004-08   南京大学   学士

   

2018-09~现在, 中国科学院上海技术物理研究所, 研究员
2018-01~2018-09,中国科学院上海微系统与信息技术研究所, 研究员
2015-09~2016-02,英国谢菲尔德大学, 访问学者
2012-02~2012-04,瑞典查尔姆斯理工大学, 访问学者
2012-01~2017-12,中国科学院上海微系统与信息技术研究所, 副研究员
2009-06~2011-12,中国科学院上海微系统与信息技术研究所, 助理研究员

2023-01-01-2023-10-01,第十五届全国分子束外延学术会议组委会副主席,
2023-01-01-2023-10-01,第十五届全国分子束外延学术会议程序委员会委员,
2022-12-01-今,Electronics编辑,
2021-09-01-2022-10-01,Froniters in Materials客座编辑,
2021-01-01-2021-10-31,第十四届全国分子束外延学术会议组委会委员,
2020-05-01-2021-04-30,Journal of Crystal客座编辑,
2018-11-16-2021-11-30,《半导体学报》编委,
2018-08-01-2019-05-01,Journal of Crystal Growth客座编辑,
2017-10-01-2018-10-01,第20届国际分子束外延会议组委会主席,
2017-09-30-2018-09-30,第20届国际分子束外延会议程序委员会委员,
2015-12-01-2016-12-01,第七届国际含铋半导体会议程序委员会委员,
2012-11-01-2013-09-01,第十届全国分子束外延学术会议组委会委员,

（1） 上海市青年科技英才, 省级, 2023
（2） 江苏省第六期“333高层次人才培养工程”第三层次培养对象, 省级, 2022
（3） 上海市青年拔尖人才, 省级, 2020
（4） 上海市青年科技启明星, 省级, 2017
（5） 上海微系统所新微之光, 二等奖, 研究所（学校）, 2017
（6） 上海市技术发明奖, 三等奖, 省级, 2015
（7） 上海市科技进步二等奖, 二等奖, 省级, 2012
（8） 中国科学院青年创新促进会会员, 院级, 2012

（ 1 ） 一种平衡光电探测器、测距装置和测速装置, 发明专利, 2023, 第 3 作者, 专利号: CN116413729A

（ 2 ） 一种宽谱铟镓砷焦平面的结构及其制备方法, 发明专利, 2022, 第 4 作者, 专利号: CN114551618A

（ 3 ） PIIN型高In组分InGaAs探测器材料结构和制备方法, 发明专利, 2021, 第 1 作者, 专利号: CN110896114B

（ 4 ） 表征InGaAs探测器材料缺陷与器件性能关联性的方法, 发明专利, 2020, 第 1 作者, 专利号: CN110987981A

（ 5 ） 一种高均匀性单光子面光源的产生装置, 发明专利, 2020, 第 2 作者, 专利号: CN110927981A

（ 6 ） 一种多层InGaAs探测器材料结构和制备方法, 发明专利, 2020, 第 1 作者, 专利号: CN110896120A

（ 7 ） 一种柔性InGaAs探测器的制备方法, 发明专利, 2019, 第 1 作者, 专利号: CN110224045A

（ 8 ） 一种基于气态源分子束外延的大失配InGaAs材料生长方法, 专利授权, 2019, 第 1 作者, 专利号: CN110205673A

（ 9 ） 一种宽谱InGaAs雪崩焦平面探测器及其制造方法, 发明专利, 2019, 第 2 作者, 专利号: CN110047967A

（ 10 ） 一种InGaAs雪崩焦平面探测器的串扰抑制结构, 发明专利, 2019, 第 2 作者, 专利号: CN110021617A

（ 11 ） 一种雪崩探测器过渡层结构及制备方法, 发明专利, 2019, 第 1 作者, 专利号: CN109473496A

（ 12 ） 一种分子束外延不同类型束源炉参数换算的方法, 发明专利, 2019, 第 1 作者, 专利号: CN109280967A

   

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[7] Gu, Yi, Wang, Hongzhen, Yang, Bo, Tian, Dongdong, Yang, Liyi, Li, Tao, Shao, Xiumei, Liu, Dafu, Li, Xue, Gong, Haimei, Fang, Jiaxiong. Relationship between epi-wafer photoluminescence and focal plane array performances of InGaAs detectors. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2023, 第 1 作者  通讯作者  157: http://dx.doi.org/10.1016/j.mssp.2023.107329.
[8] 张永刚, 顾溢, 马英杰, 邵秀梅, 李雪, 龚海梅. 太周探测：从60年代四大天文发现说起（上）. 红外[J]. 2023, 第 2 作者44(12): 6, 
[9] Liu, Bowen, Gu, Yi, Huang, Weiguo, Deng, Shuangyan, Wang, Songyang, Ma, Yingjie, Wang, Hongzhen, Huang, Hua, Gong, Qian, Li, Tao, Shao, Xiumei, Li, Xue, Gong, Haimei. Effects of in-situ thermal annealing on metamorphic InGaAs photodetector materials grown by molecular beam epitaxy. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2023, 第 2 作者  通讯作者  165: http://dx.doi.org/10.1016/j.mssp.2023.107656.
[10] 杨瑛, 王红真, 范柳燕, 陈平平, 刘博文, 贺训军, 顾溢, 马英杰, 李淘, 邵秀梅, 李雪. 分子束外延高铟组分InGaAs薄膜研究. 红外与毫米波学报[J]. 2022, 第 7 作者  通讯作者  41(6): 987-994, http://lib.cqvip.com/Qikan/Article/Detail?id=7108733219.
[11] Ma, YingJie, Xue Li, xiumei shao, Shuangyan Deng, Jifeng Cheng, Yi Gu, Yage Liu, Yu Chen, Xianliang Zhu, Tao Li, Yonggang Zhang, haimei gong, jiaxiong fang. 320*256 Extended Wavelength InxGa1-xAs/InP Focal Plane Arrays: Dislocation Defect, Dark Signal and Noise. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS[J]. 2022, 第 6 作者120: 105281-105281, 
[12] 于春蕾, 龚海梅, 李雪, 黄松垒, 杨波, 朱宪亮, 邵秀梅, 李淘, 顾溢. 2560×2048元短波红外InGaAs焦平面探测器（特邀）. 红外与激光工程[J]. 2022, 第 9 作者51(3): 1-10, http://lib.cqvip.com/Qikan/Article/Detail?id=7107100667.
[13] Jifeng Cheng, Xue Li, xiumei shao, Tao Li, yingjie ma, yi gu, Yonggang Zhang, haimei gong, Shuangyan Deng. 2.45-μm 1280 × 1024 InGaAs Focal Plane Array With 15-μm Pitch for Extended SWIR Imaging. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2022, 第 6 作者34(4): 231-234, 
[14] Zhang YongGang, Gu Yi, Ma YingJie, Shao XiuMei, Li Xue, Gong HaiMei, Fang JiaXiong. The magic of III-Vs. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2022, 第 2 作者41(6): 941-950, http://dx.doi.org/10.11972/j.issn.1001-9014.2022.06.001.
[15] Jiao, Zhejing, Gu, Yi, Zhang, Yonggang, Hu, Anduo, Gong, Qian, Wang, Shumin, Li, Tao, Li, Xue. Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers. FRONTIERS IN MATERIALS[J]. 2022, 第 2 作者  通讯作者  9: http://dx.doi.org/10.3389/fmats.2022.833777.
[16] 黄卫国, 顾溢, 金宇航, 刘博文, 龚谦, 黄华, 王庶民, 马英杰, 张永刚. 采用Ga（In，As）P异变缓冲层的GaP/Si衬底上InAs量子阱. 红外与毫米波学报[J]. 2022, 第 2 作者  通讯作者  41(1): 253-261, http://lib.cqvip.com/Qikan/Article/Detail?id=7106726926.
[17] Fei, Cheng, Liu, Junliang, Li, Yongfu, Gu, Yi, Liu, Zhaojun, Zhao, Xian, Fang, Jiaxiong. Short-wave infrared real-time high dynamic range imaging and display based on correlated double sampling. APPLIED OPTICS[J]. 2021, 第 4 作者60(6): 1774-1779, http://dx.doi.org/10.1364/AO.415352.
[18] Wang, Hongzhen, Gu, Yi, Yu, Chunlei, Zhu, Shalu, Zhu, Yicheng, Chen, Pingping, Cao, Jiasheng, Yang, Bo, Li, Tao, Shao, Xiumei, Li, Xue, Gong, Haimei. Direct correlation of defects and dark currents of InGaAs/InP photodetectors. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2021, 第 2 作者  通讯作者  123: http://dx.doi.org/10.1016/j.mssp.2020.105540.
[19] Wang, Hongzhen, Zhu, Shalu, Fan, Liuyan, Gu, Yi, Chen, Pingping, Wang, Shumin, Cao, Jiasheng, Yang, Bo, Li, Tao, Shao, Xiumei, Li, Xue, Gong, Haimei. Effects of substrate temperature on the uniformity of InGaAs epilayers using a dual-zone manipulator. JOURNAL OF CRYSTAL GROWTH[J]. 2021, 第 4 作者  通讯作者  574: http://dx.doi.org/10.1016/j.jcrysgro.2021.126330.
[20] Ma, Yingjie, Zhu, Xianliang, Yang, Bo, Cheng, Jifeng, Gu, Yi, Li, Tao, Shao, Xiumei, Li, Xue, Gong, Haimei, Gong, H, Lu, J. Fabrication of highly-uniform indium ball bumps for small unit-cell infrared focal plane arrays. AOPC 2020: INFRARED DEVICE AND INFRARED TECHNOLOGY. 2020, 第 5 作者11563: 
[21] Liu, Yage, Ma, Yingjie, Li, Xue, Gu, Yi, Zhang, Yonggang, Gong, Haimei, Fang, Jiaxiong. Surface Leakage Behaviors of 2.6 mu m In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth. IEEE JOURNAL OF QUANTUM ELECTRONICS[J]. 2020, 第 4 作者56(2): http://dx.doi.org/10.1109/JQE.2020.2970745.
[22] Yu, Yizhen, Ma, Yingjie, Gu, Yi, Chen, Yu, Yang, Bo, Cheng, Jifeng, Li, Tao, Li, Xue, Shao, Xiumei, Gong, Haimei. Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays. ACS APPLIED ELECTRONIC MATERIALS[J]. 2020, 第 3 作者2(8): 2558-2564, https://www.webofscience.com/wos/woscc/full-record/WOS:000566338100029.
[23] Wang, Hongzhen, Zhu, Yicheng, Gu, Yi, Chen, Pingping, Wang, Wei, Chen, Xiren, Yang, Bo, Li, Tao, Shao, Xiumei, Li, Xue, Gong, Haimei. High electron mobility InP grown by solid source molecular beam epitaxy. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2020, 第 3 作者  通讯作者  112: http://dx.doi.org/10.1016/j.mssp.2020.105012.
[24] Liu, Junliang, Xu, Yining, Wang, Zheng, Li, Yongfu, Gu, Yi, Liu, Zhaojun, Zhao, Xian. Reducing Afterpulsing in InGaAs(P) Single-Photon Detectors with Hybrid Quenching. SENSORS[J]. 2020, 第 5 作者20(16): https://doaj.org/article/b92004f3445a408cb2f469b49b3ef54d.
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[26] Fei, Cheng, Ma, Yanyang, Jiang, Shan, Liu, Junliang, Sun, Baoqing, Li, Yongfu, Gu, Yi, Zhao, Xian, Fang, Jiaxiong. Real-Time Dynamic 3D Shape Reconstruction with SWIR InGaAs Camera. SENSORS[J]. 2020, 第 7 作者20(2): https://doaj.org/article/c80278cdb4024431bed6c2fae46d13c2.
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[32] Wan, Luhong, Cao, Gaoqi, Shao, Xiumei, Deng, Shuangyan, Cheng, Jifeng, Gu, Yi, Li, Xue. High performance In0.83Ga0.17As SWIR photodiode passivated by Al2O3/SiNx stacks with low-stress SiNx films. JOURNAL OF APPLIED PHYSICS[J]. 2019, 第 6 作者126(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000476587700001.
[33] 师艳辉, 杨楠楠, 马英杰, 顾溢, 陈星佑, 龚谦, 张永刚. 数字递变异变赝衬底上2.6μm In0.83Ga0.17As/InP光电探测器的性能改进. 红外与毫米波学报[J]. 2019, 第 4 作者38(3): 275-280, http://lib.cqvip.com/Qikan/Article/Detail?id=7002197320.
[34] Zheng WenLong, Zhang YaGuang, Gu Yi, Li BaoBao, Chen ZeZhong, Chen PingPing. Effects of InGaAs/InP interface control on the electrical and optical properties of InGaAs films. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2019, 第 3 作者38(6): 751-757, https://www.webofscience.com/wos/woscc/full-record/WOS:000503383100012.
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[38] Ma, Yingjie, Yang, Nannan, Gu, Yi, Chen, Xingyou, Zhang, Yonggang. Frequency Response of Barrier Type 2.6 mu m In0.83Ga0.17As/In0.83Al0.17As Photodetectors on InP. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2019, 第 3 作者  通讯作者  216(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000455254300023.
[39] Shi YanHui, Yang NanNan, Ma YingJie, Gu Yi, Chen XingYou, Gong Qian, Zhang YongGang. Improved performances of 2. 6 mu m In0.83Ga0.17 As/InP photodetectors on digitally-graded metamorphic pseudo-substrates. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2019, 第 4 作者  通讯作者  38(3): 275-280, 
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[41] Chen, X Y, Gu, Y, Ma, Y J, Chen, S M, Tang, M C, Zhang, Y Y, Yu, X Z, Wang, P, Zhang, J, Wu, J, Liu, H Y, Zhang, Y G. Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants. MATERIALS RESEARCH EXPRESS[J]. 2019, 6(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000448454400004.
[42] Zhang, Yaguang, Gu, Yi, Zheng, Wenlong, Chen, Pingping, Zheng, Yuanliao, Zhang, Yonggang, Shao, Xiumei, Li, Xue, Gong, Haimei. Anomalous arsenic diffusion at InGaAs/InP interface. MATERIALS RESEARCH EXPRESS[J]. 2019, 第 2 作者  通讯作者  6(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000454138600001.
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（3） 应用于中红外的稀铋材料, Dilute Bismides for Mid-IR Applications, Springer, 2013-09, 第 2 作者
（4） InP-based antimony-free MQW lasers in 2-3 µm band, Intech, 2015-07, 第 1 作者
（5） 《半导体光谱测试方法与技术》——半导体科学与技术丛书, 科学出版社, 2016-01, 第 2 作者
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