基本信息


发表论文
  1. Evaluating single event effects on 28 nm FPGAs under multi conditions: high-LET ion irradiation and fault injection. Radiation Effects and Defects in Solids, 2025, 通讯作者
  2. Characteristics of Secondary Ions and Their Impact on Single-Event Upset in TMD Devices Under Proton Irradiation, NIMB, 2024, 第1/通讯作者
  3. Exploring the Impact of Shrinking Feature Sizes on Proton-Induced Saturation SEU Cross-Section through Simulation，Microelectron. Reliab., 2023, 第1/通讯作者
  4. Investigation of radiation response for III-V binary compound semiconductors due to protons using Geant4, NIMB, 2022, 第1/通讯作者
  5. Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs, NUCL SCI TECH, 2022, 通讯作者
  6. Effect of Temperature on the Heavy Ion Induced Single Event Transient on 16 nm FinFET Inverter Chains, Chin. Phys. B, 2022, 通讯作者
  7. Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM, Chin. Phys. B, 2021, 通讯作者
  8. Impact of heavy ion energy and species on single-event upset in commercial floating gate cells, Microelectron. Reliab., 2021, 第1/通讯作者
  9. Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device, Chin. Phys. B, 2020, 第1/通讯作者
  10. Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device, SYMMETRY-BASEL, 2020, 第1/通讯作者
  11. Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell, Chin. Phys. B, 2017, 第 1 作者
  12. Low energy proton induced single event upset in 65nm DDR and QDR commercial SRAMs, NIMB, 2017, 第1/通讯作者
  13. Mechanisms of alpha particle induced soft errors in nanoscale static random access memories, ACTA PHYSICA SINICA, 2020, 第 2 作者
  14. Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories, Microelectron. Reliab., 2019, 第 4 作者
  15. Heavy-ion and pulsed-laser single event effects in 130nm CMOS based thin/thick gate oxide anti-fuse PROMs, NST, 2019, 第 9 作者
  16. Annealing behavior study on floating gate errors induced byγfollowed by heavy ion irradiation, 核技术, 2019, 第 6 作者
  17. Effects of total ionizing dose on single event effect sensitivity of FRAMs, Microelectron. Reliab., 2019, 第 5 作者
  18. Impact of Total Ionizing Dose on Single Event Upset Sensitivity of Nano-SRAMs Devices, 原子核物理评论, 2019, 第 5 作者
  19. Influences of total ionizing dose on single event effect sensitivity in floating gate cells, Chin. Phys. B, 2018, 第 6 作者
  20. Investigation of flux dependent sensitivity on single event effect in memory devices, Chin. Phys. B, 2018, 第 10 作者
  21. Heavy Ion Radiation Effects on a 130-nm COTS NVSRAM Under Different Measurement Conditions, IEEE TNS, 2018, 第 6 作者
  22. Anomalous annealing of floating gate errors due to heavy ion irradiation, NIMB, 2018, 第 6 作者
  23. Influences of total ionizing dose on single event effect sensitivity in floating gate cells, 中国物理B：英文版, 2018, 第 6 作者
  24. Radiation-Induced "Fake MBU" by Heavy Ion in 65 nm SRAM with ECC, 原子核物理评论, 2018, 第 5 作者
  25. Application of SEU imaging for analysis of device architecture using a 25 MeV/u 86Kr ion microbeam at HIRFL, NIMB, 2017, 第11作者
  26. A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM, NIMB, 2017, 第 8 作者
  27. Influence of heavy ion flux on single event effect testing in memory devices, NIMB, 2017, 第 8 作者
  28. Prediction of proton-induced SEE error rates for the VATA160 ASIC, NUCLEAR SCIENCE AND TECHNIQUES, 2017, 第 9 作者
  29. Monte Carlo predictions of proton SEE cross-sections from heavy ion test data, Chin. Phys. C, 2016, 第 9 作者
  30. Impact of Heavy-ion Nuclear Reactions on Single Event Upset, Nuclear Physics Review, 2015, 第 7 作者 中


软著专利
  1. 叶兵，蔡莉，倪发福，罗捷，胡培培，翟鹏飞，孙友梅，刘杰，基于Geant4的单粒子效应可视化蒙特卡洛模拟仿真软件 V1.0，2024SR1121306
  2. 叶兵，胡培培，翟鹏飞，刘杰，孙友梅，基于核孔膜的数字电路芯片单粒子翻转甄别系统和方法，ZL 2024 1 0830893.6
  3. 叶兵，刘杰，孙友梅，蔡莉，罗捷，赵培雄，一种测量重离子能量和种类的方法，ZL 2021 1 1673047.0
  4. 叶兵，胡培培，刘杰，翟鹏飞，李宗臻，徐丽君，闫晓宇，刘文强，罗捷，单粒子效应粒子参数计算软件V1.0，2025SR1481205

会议交流
  1. 超高能质子引起多技术节点器件单粒子翻转模拟仿真研究，第十四届全国固体核径迹学术会议，2023-02-07，海报
  2. 器件特征尺寸缩小对质子引起单粒子翻转饱和截面影响仿真研究，第三届中国空间科学大会，2023-08-22，海报
  3. Simulating SEU in Multi-Technology node Devices under Ultra-high-energy Proton Irradiation，21st International Conference on Radiation Effects in Insulators，2023-09-08，Poster
  4. Characterization of Heavy Ions produced by Protons Passing Through Shielding & Packaging and Induced SEU in Nano-Devices，International Conference on Ion Beam Modification of Materials (IBMM 2024)，2024-07-05，Poster
  5. Characteristics of secondary ions and their impact on single-event upset in TMD devices under proton irradiation，30th International Conference on Atomic Collisions in Solids & 12th International Symposium on Swift Heavy Ions in Matter，2024-11-29，Poster
  6. Single Event Upsets Induced by High Energy Particles in Nano-Devices: New Reliability Challenge for Space Applications，6th International Conference on Radiation Effects of Electronic Devices (ICREED2025)，2025-04-18，Invited Speaker

中国科学院大学 中国科学院近代物理研究所  叶兵 副研究员 甘肃省兰州市城关区南昌路509号  硕导  理学博士 兰州大学 单粒子效应 辐射效应 重离子 加速器 仿真 Geant4