基本信息
杨静  女  硕导  中国科学院半导体研究所
电子邮件: yangjing333@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号中科院半导体研究所
邮政编码:

研究领域

1、GaN基材料的MOCVD生长;

2、AlGaN紫外激光器制备;

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
GaN基光电子器件

教育背景

2012-09--2015-07   中国科学院半导体研究所   博士学位
2008-09--2010-07   天津大学   硕士研究生
学历

研究生

学位

博士

工作经历

   
工作简历
2018-01~2021-07,中国科学院半导体研究所, 副研究员
2015-07~2017-12,中国科学院半导体研究所, 助理研究员
2010-07~2012-08,三安光电股份有限公司, 工程师

专利与奖励

   
专利成果
( 1 ) 一种新型蓝宝石上生长GaN外延层方法及GaN外延层, 专利授权, 2021, 第 4 作者, 专利号: CN111081834B

( 2 ) pin型GaN雪崩器件p层载流子浓度测量方法, 专利授权, 2021, 第 4 作者, 专利号: CN111366832B

( 3 ) 氮化镓基激光器及其制备方法, 发明专利, 2020, 第 3 作者, 专利号: CN112134143A

( 4 ) 碳掺杂调控的GaN基HEMT外延结构及其制作方法, 发明专利, 2020, 第 4 作者, 专利号: CN111952365A

( 5 ) 具有非对称In组分InGaN波导层的氮化镓基激光器, 发明专利, 2020, 第 4 作者, 专利号: CN111900624A

( 6 ) 改善p型氮化镓欧姆的方法, 发明专利, 2020, 第 6 作者, 专利号: CN111446622A

( 7 ) 低比接触电阻率的p型接触层以及氮化镓基紫外激光器, 发明专利, 2020, 第 5 作者, 专利号: CN111446624A

( 8 ) 低V型缺陷密度的GaN基多量子阱激光器外延片及制备方法, 专利授权, 2020, 第 1 作者, 专利号: CN109873299B

( 9 ) 一种高欧姆接触特性的p型GaN外延片及其制备方法, 发明专利, 2019, 第 1 作者, 专利号: CN109860044A

( 10 ) 一种绿光激光器外延片及其制备方法, 专利授权, 2019, 第 1 作者, 专利号: CN105449522B

( 11 ) 在InGaN表面获得In量子点的方法、InGaN量子点及外延结构, 发明专利, 2019, 第 3 作者, 专利号: CN109461801A

( 12 ) InGaN/(In)GaN量子阱结构的制造方法及LED外延片, 发明专利, 2019, 第 4 作者, 专利号: CN109461796A

( 13 ) 应力调控波导层绿光激光器外延片及其制备方法, 发明专利, 2018, 第 1 作者, 专利号: CN105811243B

( 14 ) InGaN/GaN异质外延结构及其生长方法, 发明专利, 2018, 第 7 作者, 专利号: CN108598192A

( 15 ) 高发光效率InGaN基多量子阱外延片及其制备方法, 发明专利, 2018, 第 2 作者, 专利号: CN105789393B

( 16 ) 低电阻率P型氮化镓材料及其制备方法, 发明专利, 2018, 第 1 作者, 专利号: CN105513951B

( 17 ) 低电阻率低温P型铝镓氮材料的制备方法, 发明专利, 2017, 第 1 作者, 专利号: CN104201256B

( 18 ) GaN基紫外激光器晶圆、激光器芯片及激光器及其制备方法, 发明专利, 2017, 第 7 作者, 专利号: CN107069433A

( 19 ) InGaN/AlInGaN多量子阱太阳能电池结构, 发明专利, 2015, 第 1 作者, 专利号: CN104393088A

( 20 ) 低电阻率P型铝镓氮材料及其制备方法, 发明专利, 2015, 第 1 作者, 专利号: CN104332545A

( 21 ) 含有低温插入层的铟镓氮/氮化镓多量子阱太阳能电池, 发明专利, 2014, 第 1 作者, 专利号: CN104201220A

( 22 ) 减小GaN基蓝紫光端发射激光器电子泄漏的方法, 发明专利, 2014, 第 6 作者, 专利号: CN103956653A

( 23 ) 高电阻低位错GaN薄膜及制备方法, 发明专利, 2014, 第 6 作者, 专利号: CN103887326A

( 24 ) 一种高阻GaN薄膜的制备方法, 发明专利, 2014, 第 6 作者, 专利号: CN103578986A

( 25 ) 含有变In组分InGaN/GaN多层量子阱结构的太阳能电池, 发明专利, 2013, 第 1 作者, 专利号: CN103094378A

出版信息

   
发表论文
[1] Ben, Yuhao, Liang, Feng, Zhao, Degang, Yang, Jing, Liu, Zongshun, Chen, Ping. The role of InGaN quantum barriers in improving the performance of GaN-based laser diodes. OPTICS AND LASER TECHNOLOGY[J]. 2022, 145: [2] 杨静. Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes. Optics Letters[J]. 2022, [3] Hou, Yufei, Zhao, Degang, Liang, Feng, Liu, Zongshun, Yang, Jing, Chen, Ping. Enhancing the efficiency of GaN-based laser diodes by the designing of a p-AlGaN cladding layer and an upper waveguide layer. OPTICAL MATERIALS EXPRESS[J]. 2021, 11(6): 1780-1790, http://dx.doi.org/10.1364/OME.422378.
[4] Wang, Baibin, Liu, Zongshun, Zhao, Degang, Liang, Feng, Yang, Jing, Chen, Ping. Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector. OPTICAL MATERIALS EXPRESS[J]. 2021, 11(6): 1614-1621, http://dx.doi.org/10.1364/OME.423944.
[5] Yang, J, Zhang, Y H, Zhao, D G, Chen, P, Liu, Z S, Liang, F. Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies. JOURNAL OF CRYSTAL GROWTH[J]. 2021, 570: http://dx.doi.org/10.1016/j.jcrysgro.2021.126245.
[6] Ben, Yuhao, Liang, Feng, Zhao, Degang, Wang, Xiaowei, Yang, Jing, Liu, Zongshun, Chen, Ping. Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells. NANOMATERIALS[J]. 2021, 11(4): https://doaj.org/article/ae055d18a8e948039c288bbff5a7dbd9.
[7] Hou, Yufei, Zhao, Degang, Liang, Feng, Zhu, Jianjun, Chen, Ping, Liu, Zongshun, Yang, Jing, Xing, Yao, Liu, Shuangtao. Performance improvement of GaN-based blue and ultraviolet double quantum well laser diodes by using stepped-doped lower waveguide. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2021, 121: http://dx.doi.org/10.1016/j.mssp.2020.105355.
[8] Hou, Yufei, Zhao, Degang, Liang, Feng, Yang, Jing, Chen, Ping, Liu, Zongshun. Characteristics of InGaN-based green laser diodes with additional InGaN hole reservoir layer. VACUUM[J]. 2021, 186: http://dx.doi.org/10.1016/j.vacuum.2021.110049.
[9] Yang, J, Wang, B B, Zhao, D G, Liu, Z S, Liang, F, Chen, P, Zhang, Y H, Zhang, Z Z. Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers. JOURNAL OF APPLIED PHYSICS[J]. 2021, 130(17): [10] Wang, Xiaowei, Liang, Feng, Zhao, Degang, Liu, Zongshun, Zhu, Jianjun, Peng, Liyuan, Yang, Jing. Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth. APPLIED SURFACE SCIENCE[J]. 2021, 548: http://dx.doi.org/10.1016/j.apsusc.2021.149272.
[11] Wang, Baibin, Liang, Feng, Zhao, Degang, Ben, Yuhao, Yang, Jing, Chen, Ping, Liu, Zongshun. Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN. OPTICS EXPRESS[J]. 2021, 29(3): 3685-3693, https://www.webofscience.com/wos/woscc/full-record/WOS:000614617700060.
[12] Hou, Yufei, Zhao, Degang, Liang, Feng, Wang, Xiaowei, Yang, Jing, Chen, Ping, Liu, Zongshun. Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure. OPTICAL MATERIALS[J]. 2020, 110: https://www.webofscience.com/wos/woscc/full-record/WOS:000602386800006.
[13] Chen, Ping, Zhao, DeGang, Jiang, DeSheng, Yang, Jing, Zhu, JianJun, Liu, ZongShun, Liu, Wei, Liang, Feng, Liu, ShuangTao, Xing, Yao, Zhang, LiQun. Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift. CHINESE PHYSICS B[J]. 2020, 29(3): 221-224, http://lib.cqvip.com/Qikan/Article/Detail?id=7101214689.
[14] Liang Feng, Zhao Degang, Jiang Desheng, Wang Wenjie, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing, Zhang Liqun. Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer. NANOPHOTONICS[J]. 2020, 9(3): 667-674, https://doaj.org/article/255ce30db3fa450e901afa3795cf5447.
[15] Yang, J, Zhao, D G, Jiang, D S, Chen, P, Zhu, J J, Liu, Z S, Liang, F, Liu, S T, Xing, Y. Suppression the formation of V-pits in InGaN/GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2020, 822: http://dx.doi.org/10.1016/j.jallcom.2019.153571.
[16] Liu, Wei, Liang, Feng, Zhao, Degang, Yang, Jing, Jiang, Desheng, Zhu, Jianjun, Liu, Zongshun. Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness. JOURNAL OF ELECTRONIC MATERIALS[J]. 2020, 49(6): 3877-3882, https://www.webofscience.com/wos/woscc/full-record/WOS:000523080700002.
[17] Peng, Liyuan, Zhao, Degang, Zhu, Jianjun, Wang, Wenjie, Liang, Feng, Jiang, Desheng, Liu, Zongshun, Chen, Ping, Yang, Jing, Liu, Shuangtao, Xing, Yao, Zhang, Liqun. Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment. APPLIED SURFACE SCIENCE[J]. 2020, 505: http://dx.doi.org/10.1016/j.apsusc.2019.144283.
[18] Zhang, Yuheng, Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Yang, Jing, Liu, Shuangtao. Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN. NANOSCALE RESEARCH LETTERS[J]. 2020, 15(1): http://dx.doi.org/10.1186/s11671-020-3263-9.
[19] Wang, Xiaowei, Liang, Feng, Zhao, Degang, Liu, Zongshun, Zhu, Jianjun, Yang, Jing. Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness. NANOSCALE RESEARCH LETTERS[J]. 2020, 15(1): https://doaj.org/article/bffbe44a4ac54b1d8894277940bfbf43.
[20] 梁锋, 赵德刚, 江德生, 刘宗顺, 朱建军, 陈平, 杨静. 光场分布对GaN基绿光激光器的影响. 中国激光. 2020, 47(7): 237-242, http://lib.cqvip.com/Qikan/Article/Detail?id=7102611268.
[21] Liu, Shuangtao, Yang, Jing, Zhao, Degang, Jiang, Desheng, Zhu, Jianjun, Liang, Feng, Chen, Ping, Liu, Zongshun, Xing, Yao, Peng, Liyuan, Zhang, Liqun. Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process. NANOSCALE RESEARCH LETTERS[J]. 2019, 14(1): http://dx.doi.org/10.1186/s11671-019-3095-7.
[22] Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Zhang, Liqun. Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells. OPTICAL MATERIALS EXPRESS[J]. 2019, 9(10): 3941-3951, https://www.webofscience.com/wos/woscc/full-record/WOS:000488613600005.
[23] Wang, Xiaowei, Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Yang, Jing. Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 806: 1077-1080, http://dx.doi.org/10.1016/j.jallcom.2019.07.322.
[24] Liu, Wei, Liang, Feng, Zhao, Degang, Yang, Jing, Jiang, Desheng, Zhu, Jianjun, Liu, Zongshun. Effects of photogenerated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells. MATERIALS RESEARCH EXPRESS[J]. 2019, 6(7): [25] Liang Feng, Yang Jing, Zhao Degang, Liu Zongshun, Zhu Jianjun, Chen Ping, Jiang Desheng, Shi Yongsheng, Wang Hai, Duan Lihong, Zhang Liqun, Yang Hui. Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h. JOURNAL OF SEMICONDUCTORS[J]. 2019, 40(2): http://lib.cqvip.com/Qikan/Article/Detail?id=66688488504849574850484952.
[26] Xing, Yao, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Liang, Feng, Liu, Shuangtao, Zhang, Liqun. Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence. Nanoscale Research Letters[J]. 2019, 14(1): 1-8, https://doaj.org/article/4538ab7760084de1af741b6bd63c5a0d.
[27] Ben, Yuhao, Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Xing, Yao, Liu, Shuangtao. Different influence of InGaN lower waveguide layer on the performance of GaN-based violet and ultraviolet laser diodes. SUPERLATTICES AND MICROSTRUCTURES[J]. 2019, 133: http://dx.doi.org/10.1016/j.spmi.2019.106208.
[28] Liu, S T, Yang, J, Zhao, D G, Jiang, D S, Liang, F, Chen, P, Zhu, J J, Liu, Z S, Liu, W, Xing, Y, Zhang, L Q, Li, M. The compensation role of deep defects in the electric properties of lightly Si-doped GaN. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 773: 1182-1186, http://dx.doi.org/10.1016/j.jallcom.2018.09.333.
[29] Yang, J, Zhao, D G, Zhu, J J, Liu, Z S, Jiang, D S, Chen, P, Liang, F, Liu, S T, Xing, Y. Effect of Mg doping concentration of electron blocking layer on the performance of GaN-based laser diodes. APPLIED PHYSICS B-LASERS AND OPTICS[J]. 2019, 125(12): [30] Wang, Xiaowei, Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Yang, Jing, Wang, Wenjie. Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 790: 197-202, http://dx.doi.org/10.1016/j.jallcom.2019.03.180.
[31] Yang, J, Zhao, D G, Jiang, D S, Chen, P, Zhu, J J, Liu, Z S, Liang, F, Liu, W, Liu, S T, Li, M. Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer. OPTICS AND LASER TECHNOLOGY[J]. 2019, 111: 810-813, http://dx.doi.org/10.1016/j.optlastec.2018.09.021.
[32] Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Liu, Shuangtao, Xing, Yao, Zhang, Liqun. Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-InxGa1-xN lower waveguide. SUPERLATTICES AND MICROSTRUCTURES[J]. 2019, 132: http://dx.doi.org/10.1016/j.spmi.2019.106153.
[33] Yang, J, Zhao, D G, Jiang, D S, Liu, S T, Chen, P, Zhu, J J, Liang, F, Liu, W, Li, M. Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations. OPTICAL MATERIALS[J]. 2018, 85: 14-17, http://dx.doi.org/10.1016/j.optmat.2018.08.030.
[34] Yang, Jing, Zhao, Degang, Liu, Zongshum, Jiang, DeSheng, Zhu, Jianjun, Chen, Ping, Liang, Feng, Liu, S T, Liu, Wei, Xing, Yao, Li, Mo. Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers. IEEE PHOTONICS JOURNAL[J]. 2018, 10(4): https://doaj.org/article/7a62819cad31437b82118fa6efcb4e1e.
[35] Xing, Yao, Zhao, DeGang, Jiang, DeSheng, Li, Xiang, Liu, ZongShun, Zhu, JianJun, Chen, Ping, Yang, Jing, Liu, Wei, Liang, Feng, Liu, ShuangTao, Zhang, LiQun, Wang, WenJie, Li, Mo, Zhang, YuanTao, Du, GuoTong. Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes. CHINESE PHYSICS B[J]. 2018, 27(2): http://lib.cqvip.com/Qikan/Article/Detail?id=674762612.
[36] Liu, Wei, Yang, Jing, Zhao, Degang, Jiang, Desheng, Zhu, Jianjun, Chen, Ping, Liu, Zongshun, Liang, Feng, Liu, Shuangtao, Xing, Yao, Zhang, Liqun, Wang, Wenjie, Li, Mo, Zhang, Yuantao, Du, Guotong. Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption. APPLIED SURFACE SCIENCE[J]. 2018, 456: 487-492, http://ir.sinano.ac.cn/handle/332007/6271.
[37] Liu, S T, Yang, J, Zhao, D G, Jiang, D S, Liang, F, Chen, P, Zhu, J J, Liu, Z S, Liu, W, Xing, Y, Peng, L Y, Zhang, L Q, Wang, W J, Li, M, Zhang, Y T, Du, G T. The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells. OPTICAL MATERIALS[J]. 2018, 86: 460-463, http://ir.sinano.ac.cn/handle/332007/6184.
[38] Peng, Liyuan, Zhao, Degang, Jiang, Desheng, Zhu, Jianjun, Liu, Zongshun, Chen, Ping, Yang, Jing, Liu, Wei, Liang, Feng, Xing, Yao, Liu, Shuangtao, Zhang, Liqun, Wang, Wenjie, Li, Mo, Zhang, Yuantao, Du, Guotong. Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells. OPTICS EXPRESS[J]. 2018, 26(17): 21736-21744, http://ir.sinano.ac.cn/handle/332007/6110.
[39] Liang, F, Yang, Jing, Zhao, D G, Jiang, D S, Liu, Z S, Zhu, J J, Chen, P, Liu, S T, Xing, Y, Zhang, L Q, Wang, W J, Li, Mo, Zhang, Y T, Du, G T. Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity. AIP ADVANCES[J]. 2018, 8(8): http://ir.sinano.ac.cn/handle/332007/6255.
[40] 刘双韬, 杨静, 赵德刚, 江德生, 梁锋, 陈平, 朱建军, 刘宗顺, 刘炜, 邢瑶, 彭莉媛, 张立群, 王文杰, 李沫. Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures. 中国物理B:英文版[J]. 2018, 27(12): 499-503, http://lib.cqvip.com/Qikan/Article/Detail?id=6100082088.
[41] Liu, Wei, Zhao, Degang, Jiang, Desheng, Shi, Dongping, Zhu, Jianjun, Liu, Zongshun, Chen, Ping, Yang, Jing, Liang, Feng, Liu, Shuangtao, Xing, Yao, Zhang, Liqun, Wang, Wenjie, Li, Mo, Zhang, Yuantao, Du, Guotong. Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells. OPTICS EXPRESS[J]. 2018, 26(3): 3427-3434, http://ir.sinano.ac.cn/handle/332007/6109.
[42] Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Liu, Shuangtao, Xing, Yao, Zhang, Liqun, Li, Mo, Zhang, Yuantao, Du, Guotong. Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN. NANOMATERIALS[J]. 2018, 8(9): http://ir.sinano.ac.cn/handle/332007/6298.
[43] Yi Linkai, Qi Haoran, Huang Jialin, Zhou Mei, Zhao Degang, Jiang Desheng, Yang Jing, Liu Wei, Liang Feng. Influence of dislocation density and carbon impurities in i-GaN layer on the performance of Schottky barrier ultraviolet photodetectors. MATERIALS RESEARCH EXPRESS[J]. 2018, 5(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000431061100001.
[44] Liu, ShuangTao, Yang, Jing, Zhao, DeGang, Jiang, DeSheng, Liang, Feng, Chen, Ping, Zhu, JianJun, Liu, ZongShun, Liu, Wei, Xing, Yao, Peng, LiYuan, Zhang, LiQun, Wang, WenJie, Li, Mo. Influence of carrier gas H-2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures. CHINESE PHYSICS B[J]. 2018, 27(12): http://lib.cqvip.com/Qikan/Article/Detail?id=6100082088.
[45] Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Liu, Shuangtao, Xing, Yao, Zhang, Liqun. Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN. NANOMATERIALS[J]. 2018, 8(12): https://doaj.org/article/a7b2e7a5f6b94d9a819b7cb5ca095252.
[46] Wang, Xiaowei, Yang, Jing, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Liu, Wei, Liang, Feng, Liu, Shuangtao, Xing, Yao, Wang, Wenjie, Li, Mo. Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs. SUPERLATTICES AND MICROSTRUCTURES[J]. 2018, 114: 32-36, http://dx.doi.org/10.1016/j.spmi.2017.11.038.
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[101] 杨静. InGaN多量子阱材料生长及太阳能电池器件研究. 2015, http://ir.semi.ac.cn/handle/172111/26545.
[102] Yang, Jing, Zhao, Degang, Jiang, Desheng, Chen, Ping, Zhu, Jianjun, Liu, Zongshun, Le, Lingcong, He, Xiaoguang, Li, Xiaojing. Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A[J]. 2015, 33(2): http://ir.semi.ac.cn/handle/172111/26752.
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[104] Li XiaoJing, Zhao DeGang, Jiang DeSheng, Chen Ping, Zhu JianJun, Liu ZongShun, Le LingCong, Yang Jing, He XiaoGuang. Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer. CHINESE PHYSICS B[J]. 2015, 24(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000366944000053.
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[106] Yang, J, Zhao, D G, Jiang, D S, Chen, P, Zhu, J J, Liu, Z S, Le, L C, Li, X J, He, X G, Liu, J P, Yang, H, Zhang, Y T, Du, G T. Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(5): http://ir.sinano.ac.cn/handle/332007/3433.
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[108] He, Xiaoguang, Zhao, Degang, Jiang, Desheng, Zhu, Jianjun, Chen, Ping, Liu, Zongshun, Le, Lingcong, Yang, Jing, Li, Xiaojing, Zhang, Shuming, Yang, Hui. Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B[J]. 2014, 32(5): http://www.irgrid.ac.cn/handle/1471x/1044114.
[109] Yang, Jing, Zhao, Degang, Jiang, Desheng, Chen, Ping, Zhu, Jianjun, Liu, Zongshun, Le, Lingcong, He, Xiaoguang, Li, Xiaojing, Wang, Hui, Yang, Hui, Jahn, Uwe. Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A[J]. 2014, 32(5): http://www.irgrid.ac.cn/handle/1471x/1044115.
[110] Li XiaoJing, Zhao DeGang, Jiang DeSheng, Liu ZongShun, Chen Ping, Wu LiangLiang, Li Liang, Le LingCong, Yang Jing, He XiaoGuang, Wang Hui, Zhu JianJun, Zhang ShuMing, Zhang BaoShun, Yang Hui. Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes. CHINESE PHYSICS B[J]. 2014, 23(2): http://www.irgrid.ac.cn/handle/1471x/1044121.
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科研活动

   
科研项目
( 1 ) (Al)GaN基辐射伏特效应同位素电池的关键换能器件, 主持, 国家级, 2019-01--2022-12
( 2 ) 氮化镓基绿光激光器的应力调控波导研究, 主持, 国家级, 2017-01--2019-12
( 3 ) 青年创新促进会项目, 主持, 部委级, 2019-01--2022-12
( 4 ) GaN基激光器材料及器件研究, 主持, 市地级, 2019-12--2023-11
( 5 ) 面向激光显示的三基色半导体激光器(LD)关键材料与技术基础研究, 参与, 国家级, 2016-07--2020-12
( 6 ) 高光束质量、低阈值、长寿命、低成本蓝绿光LD材料与器件关键技术与工程化研究, 参与, 国家级, 2017-04--2020-12
( 7 ) 530nm氮化镓基绿光激光器关键问题研究, 主持, 国家级, 2021-01--2024-12
( 8 ) 北京市科技新星计划, 主持, 省级, 2020-09--2023-08
参与会议
(1)InGaN量子阱生长与光学特性研究   全国第18次光纤通信第十九届集成光学学术大会   2018-07-15
(2)InGaN材料生长过程中氨气腐蚀作用研究   第十五届全国固体薄膜学术会议   2016-12-07
(3)低温GaN插入层对InGaN/GaN多量子阱质量及光学性能的影响   第一届全国宽禁带半导体学术及应用技术会议   2015-10-30
(4)多周期数InGaN/GaN MQW材料性能研究   第十四届全国固体薄膜学术会议   2014-07-29