俞学哲 男 博导 中国科学院长春光学精密机械与物理研究所
电子邮件： yuxuezhe@ciomp.ac.cn
通信地址： 中科院长春光机所发光学及应用国家重点实验室
邮政编码：
电子邮件： yuxuezhe@ciomp.ac.cn
通信地址： 中科院长春光机所发光学及应用国家重点实验室
邮政编码：
招生信息
每年招收1~2名硕士或博士研究生。
招生专业
070205-凝聚态物理
080903-微电子学与固体电子学
080903-微电子学与固体电子学
招生方向
III-V化合物半导体，硅基外延生长, 半导体激光器
教育背景
2008-09--2013-06 中国科学院半导体研究所 博士学位
2004-09--2008-06 北京大学 学士学位
2004-09--2008-06 北京大学 学士学位
工作经历
工作简历
2023-03~现在, 中国科学院长春光学精密机械与物理研究所, 研究员
2017-01~2023-02,英国伦敦大学学院 (UCL), Research Fellow
2014-11~2016-10,荷兰埃因霍温理工大学 (TUE), 博士后
2013-07~2014-10,中国科学院半导体研究所, 助理研究员
2017-01~2023-02,英国伦敦大学学院 (UCL), Research Fellow
2014-11~2016-10,荷兰埃因霍温理工大学 (TUE), 博士后
2013-07~2014-10,中国科学院半导体研究所, 助理研究员
专利与奖励
出版信息
发表论文
（1） InAs quantum dots with a narrow photoluminescence linewidth for a lower threshold current density in 1.55 ��m lasers, Optical Materials Express, 2024, 第 2 作者 通讯作者
（2） Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures, Nanomaterials, 2024, 第 3 作者
（3） 1.3 ��m InAs/GaAs quantum���dot lasers with p���type, n���type, and co���doped modulation, Advanced Physics Research, 2024, 第 3 作者
（4） Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration, JOURNAL OF LUMINESCENCE, 2023, 第 6 作者
（5） Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design, ACS APPLIED NANO MATERIALS, 2023, 第 9 作者
（6） Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage, JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2023, 第 10 作者
（7） Optically enhanced single- and multi-stacked 1.55 mu m InAs/InAlGaAs/InP quantum dots for laser applications, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 第 1 作者 通讯作者
（8） Ultrafast Control of Interfacial Exchange Coupling in Ferromagnetic Bilayer, ADVANCED ELECTRONIC MATERIALS, 2023, 第 9 作者
（9） Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate, Applied Physics Letters, 2023, 第 2 作者
（10） Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates, NANOSCALE, 2022, 第 5 作者
（11） The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 第 6 作者
（12） Ultrafast enhancement of interfacial exchange coupling in ferromagnetic bilayer, 2022,
（13） Thermally-driven formation method for growing (quantum) dots on sidewalls of self-catalysed thin nanowires, NANOSCALE HORIZONS, 2022, 第 4 作者
（14） Ultrafast optical observation of spin-pumping induced dynamic exchange coupling in ferromagnetic semiconductor/metal bilayer, SCIENTIFIC REPORTS, 2022,
（15） Direct comparison of three-terminal and four-terminal Hanle effects in the persistent photoconductor Al0.3Ga0.7As:Si, PHYSICAL REVIEW MATERIALS, 2022, 第 5 作者
（16） Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires, 2021, 第 4 作者
（17） Optimizing GaAs nanowire-based visible-light photodetectors, APPLIED PHYSICS LETTERS, 2021, 第 2 作者 通讯作者
（18） Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates, JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 第 2 作者 通讯作者
（19） Checked patterned elemental distribution in AlGaAs nanowire branches via vapor���liquid���solid growth���, NANOSCALE, 2020, 第 2 作者 通讯作者
（20） Inversion Boundary Annihilation in GaAs Monolithically Grown on On���Axis Silicon (001), ADVANCED OPTICAL MATERIALS, 2020, 第 7 作者
（21） Preferred growth direction of III-V nanowires on differently oriented Si substrates, NANOTECHNOLOGY, 2020, 第 2 作者 通讯作者
（22） Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions, SMALL, 2019, 第 8 作者
（23） Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants, MATERIALS RESEARCH EXPRESS, 2019,
（24） III-V ternary nanowires on Si substrates: growth, characterization and device applications, JOURNAL OF SEMICONDUCTORS, 2019, 第 2 作者 通讯作者
（25） Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores, NANO LETTERS, 2018, 第 2 作者 通讯作者
（26） Near Full-Composition-Range High-Quality GaAs1���xSbx Nanowires Grown by Molecular-Beam Epitaxy, NANO LETTERS, 2017, 第 8 作者
（27） Electric-field assisted switching of magnetization in perpendicularly magnetized (Ga, Mn) As films at high temperatures, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017,
（28） Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy, JOURNAL OF SEMICONDUCTORS, 2017, 第 3 作者
（29） Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy, NANOSCALE, 2016, 第 1 作者
（30） Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets, NANO LETTERS, 2016,
（31） Robust Manipulation of Magnetism in Dilute MagneticSemiconductor (Ga,Mn)As by Organic Molecules, ADVANCED MATERIALS, 2015, 第 6 作者
（32） Structure and Magnetic Properties of (In,Mn)As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy, Structure and Magnetic Properties of (In, Mn) As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy, Chinese Physics Letters, 2014, 第 4 作者
（33） Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm, NANO LETTERS, 2014, 第 3 作者
（34） Bias current dependence of the spin lifetime in insulating Al0.3Ga0.7As, APPLIED PHYSICS LETTERS, 2014, 第 6 作者
（35） Bias current dependence of the spin lifetime in insulating Al0.3Ga0.7A, APPLIED PHYSICS LETTERS, 2014,
（36） Quantitative determination of the Mn site distribution in ultrathin Ga0.80Mn0.20As layers with high critical temperatures: A Rutherford backscattering channeling investigation, PHYSICAL REVIEW B, 2014,
（37） Perpendicularly magnetized ��-MnAl (001) thin films epitaxied on GaAs, APPLIED PHYSICS LETTERS, 2013,
（38） Electron spin dynamics of ferromagnetic Ga1-xMnxAs across the insulator-to-metal transition, APPLIED PHYSICS LETTERS, 2013, 第 5 作者
（39） Spin transport and accumulation in the persistent photoconductor Al0.3Ga0.7As, APPLIED PHYSICS LETTERS, 2013, 第 6 作者
（40） All Zinc-Blende GaAs/(Ga,Mn)As Core-Shell Nanowires with Ferromagnetic Ordering, NANO LETTERS, 2013, 第 1 作者
（41） Evidence for Structural Phase Transitions Induced by the Triple Phase Line Shift in Self-Catalyzed GaAs Nanowires, NANO LETTERS, 2012, 第 1 作者
（42） Magnetic properties of fe0.4mn0.6/co2feal bilayers grown on gaas by molecular-beam epitaxy, JOURNAL OF APPLIED PHYSICS, 2011,
（2） Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures, Nanomaterials, 2024, 第 3 作者
（3） 1.3 ��m InAs/GaAs quantum���dot lasers with p���type, n���type, and co���doped modulation, Advanced Physics Research, 2024, 第 3 作者
（4） Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration, JOURNAL OF LUMINESCENCE, 2023, 第 6 作者
（5） Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design, ACS APPLIED NANO MATERIALS, 2023, 第 9 作者
（6） Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage, JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2023, 第 10 作者
（7） Optically enhanced single- and multi-stacked 1.55 mu m InAs/InAlGaAs/InP quantum dots for laser applications, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 第 1 作者 通讯作者
（8） Ultrafast Control of Interfacial Exchange Coupling in Ferromagnetic Bilayer, ADVANCED ELECTRONIC MATERIALS, 2023, 第 9 作者
（9） Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate, Applied Physics Letters, 2023, 第 2 作者
（10） Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates, NANOSCALE, 2022, 第 5 作者
（11） The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 第 6 作者
（12） Ultrafast enhancement of interfacial exchange coupling in ferromagnetic bilayer, 2022,
（13） Thermally-driven formation method for growing (quantum) dots on sidewalls of self-catalysed thin nanowires, NANOSCALE HORIZONS, 2022, 第 4 作者
（14） Ultrafast optical observation of spin-pumping induced dynamic exchange coupling in ferromagnetic semiconductor/metal bilayer, SCIENTIFIC REPORTS, 2022,
（15） Direct comparison of three-terminal and four-terminal Hanle effects in the persistent photoconductor Al0.3Ga0.7As:Si, PHYSICAL REVIEW MATERIALS, 2022, 第 5 作者
（16） Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires, 2021, 第 4 作者
（17） Optimizing GaAs nanowire-based visible-light photodetectors, APPLIED PHYSICS LETTERS, 2021, 第 2 作者 通讯作者
（18） Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates, JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 第 2 作者 通讯作者
（19） Checked patterned elemental distribution in AlGaAs nanowire branches via vapor���liquid���solid growth���, NANOSCALE, 2020, 第 2 作者 通讯作者
（20） Inversion Boundary Annihilation in GaAs Monolithically Grown on On���Axis Silicon (001), ADVANCED OPTICAL MATERIALS, 2020, 第 7 作者
（21） Preferred growth direction of III-V nanowires on differently oriented Si substrates, NANOTECHNOLOGY, 2020, 第 2 作者 通讯作者
（22） Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions, SMALL, 2019, 第 8 作者
（23） Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants, MATERIALS RESEARCH EXPRESS, 2019,
（24） III-V ternary nanowires on Si substrates: growth, characterization and device applications, JOURNAL OF SEMICONDUCTORS, 2019, 第 2 作者 通讯作者
（25） Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores, NANO LETTERS, 2018, 第 2 作者 通讯作者
（26） Near Full-Composition-Range High-Quality GaAs1���xSbx Nanowires Grown by Molecular-Beam Epitaxy, NANO LETTERS, 2017, 第 8 作者
（27） Electric-field assisted switching of magnetization in perpendicularly magnetized (Ga, Mn) As films at high temperatures, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017,
（28） Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy, JOURNAL OF SEMICONDUCTORS, 2017, 第 3 作者
（29） Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy, NANOSCALE, 2016, 第 1 作者
（30） Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets, NANO LETTERS, 2016,
（31） Robust Manipulation of Magnetism in Dilute MagneticSemiconductor (Ga,Mn)As by Organic Molecules, ADVANCED MATERIALS, 2015, 第 6 作者
（32） Structure and Magnetic Properties of (In,Mn)As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy, Structure and Magnetic Properties of (In, Mn) As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy, Chinese Physics Letters, 2014, 第 4 作者
（33） Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm, NANO LETTERS, 2014, 第 3 作者
（34） Bias current dependence of the spin lifetime in insulating Al0.3Ga0.7As, APPLIED PHYSICS LETTERS, 2014, 第 6 作者
（35） Bias current dependence of the spin lifetime in insulating Al0.3Ga0.7A, APPLIED PHYSICS LETTERS, 2014,
（36） Quantitative determination of the Mn site distribution in ultrathin Ga0.80Mn0.20As layers with high critical temperatures: A Rutherford backscattering channeling investigation, PHYSICAL REVIEW B, 2014,
（37） Perpendicularly magnetized ��-MnAl (001) thin films epitaxied on GaAs, APPLIED PHYSICS LETTERS, 2013,
（38） Electron spin dynamics of ferromagnetic Ga1-xMnxAs across the insulator-to-metal transition, APPLIED PHYSICS LETTERS, 2013, 第 5 作者
（39） Spin transport and accumulation in the persistent photoconductor Al0.3Ga0.7As, APPLIED PHYSICS LETTERS, 2013, 第 6 作者
（40） All Zinc-Blende GaAs/(Ga,Mn)As Core-Shell Nanowires with Ferromagnetic Ordering, NANO LETTERS, 2013, 第 1 作者
（41） Evidence for Structural Phase Transitions Induced by the Triple Phase Line Shift in Self-Catalyzed GaAs Nanowires, NANO LETTERS, 2012, 第 1 作者
（42） Magnetic properties of fe0.4mn0.6/co2feal bilayers grown on gaas by molecular-beam epitaxy, JOURNAL OF APPLIED PHYSICS, 2011,