基本信息

许晓欣 女 中国科学院微电子研究所
电子邮件: xuxiaoxin@ime.ac.cn
通信地址: 北京市朝阳区北土城西路三号
邮政编码:
电子邮件: xuxiaoxin@ime.ac.cn
通信地址: 北京市朝阳区北土城西路三号
邮政编码:
招生信息
招生专业
080903-微电子学与固体电子学080901-物理电子学085400-电子信息
招生方向
新型存储器,神经网络计算半导体器件可靠性新型存储器应用
教育背景
2014-09--2017-06 中国科学院大学 博士研究生2011-09--2014-06 山东大学 硕士研究生2007-09--2011-06 中国矿业大学 学士
工作经历
工作简历
2022-11~现在, 中科院微电子研究所, 研究员2020-07~2022-11,中科院微电子研究所, 副研究员2017-07~2020-07,中科院微电子研究所, 助理研究员
社会兼职
2022-06-01-2026-06-01,International memory workshop, TPC member,
2022-03-01-今,MDPI Micromachines Guest editor, Guest editor
2022-03-01-今,MDPI Micromachines Guest editor, Guest editor
专利与奖励
奖励信息
(1) 中科院青促会优秀会员, 院级, 2022(2) 华为奥林帕斯先锋奖, , 其他, 2021(3) 中科院微电子所先进个人, , 研究所(学校), 2021(4) 中科院杰出科技成就奖, 特等奖, 省级, 2018
专利成果
( 1 ) 一种忆阻器及其制作方法, 发明专利, 2022, 第 1 作者, 专利号: CN114242889A( 2 ) 一种忆阻器及其制作方法, 发明专利, 2022, 第 1 作者, 专利号: CN114242889A( 3 ) 忆阻器、制备方法及全忆阻器基的神经形态计算芯片, 发明专利, 2021, 第 1 作者, 专利号: CN113517391A( 4 ) 忆阻器、制备方法及全忆阻器基的神经形态计算芯片, 发明专利, 2021, 第 1 作者, 专利号: CN113517391A( 5 ) 基于磁畴壁驱动型磁隧道结的激活函数发生器及制备方法, 发明专利, 2021, 第 6 作者, 专利号: CN113193110A( 6 ) 基于磁畴壁驱动型磁隧道结的激活函数发生器及制备方法, 发明专利, 2021, 第 6 作者, 专利号: CN113193110A( 7 ) 一种阻变存储器及其制作方法, 发明专利, 2021, 第 1 作者, 专利号: CN112864318A( 8 ) 一种阻变存储器及其制作方法, 发明专利, 2021, 第 1 作者, 专利号: CN112864318A( 9 ) 阻变存储器、存算器件、芯片及阻变存储器的制备方法, 发明专利, 2021, 第 1 作者, 专利号: CN112838161A( 10 ) 阻变存储器、存算器件、芯片及阻变存储器的制备方法, 发明专利, 2021, 第 1 作者, 专利号: CN112838161A( 11 ) 一种阻变存储器预处理方法及装置, 发明专利, 2021, 第 2 作者, 专利号: CN112837732A( 12 ) 一种阻变存储器预处理方法及装置, 发明专利, 2021, 第 2 作者, 专利号: CN112837732A( 13 ) 神经网络计算电路、芯片及系统, 发明专利, 2021, 第 2 作者, 专利号: CN112580790A( 14 ) 神经网络计算电路、芯片及系统, 发明专利, 2021, 第 2 作者, 专利号: CN112580790A( 15 ) 存储单元结构及存储器阵列结构、电压偏置方法, 发明专利, 2020, 第 3 作者, 专利号: CN111446271A( 16 ) 存储单元结构及存储器阵列结构、电压偏置方法, 发明专利, 2020, 第 3 作者, 专利号: CN111446271A( 17 ) 融合型存储器的写入、擦除方法, 专利授权, 2019, 第 3 作者, 专利号: CN109887532A( 18 ) 融合型存储器的写入、擦除方法, 专利授权, 2019, 第 3 作者, 专利号: CN109887532A( 19 ) 融合型存储器, 专利授权, 2019, 第 3 作者, 专利号: CN109860190A( 20 ) 融合型存储器, 专利授权, 2019, 第 3 作者, 专利号: CN109860190A( 21 ) 神经网络运算系统, 发明专利, 2019, 第 2 作者, 专利号: CN109829540A( 22 ) 神经网络运算系统, 发明专利, 2019, 第 2 作者, 专利号: CN109829540A( 23 ) 存储器, 实用新型, 2019, 第 3 作者, 专利号: CN109801977A( 24 ) 存储器, 实用新型, 2019, 第 3 作者, 专利号: CN109801977A( 25 ) 1S1R存储器集成结构及其制备方法, 发明专利, 2018, 第 4 作者, 专利号: CN108630810A( 26 ) 1S1R存储器集成结构及其制备方法, 发明专利, 2018, 第 4 作者, 专利号: CN108630810A( 27 ) 一种阻变存储器的制造方法和阻变存储器, 专利授权, 2017, 第 3 作者, 专利号: CN107275482A( 28 ) 一种阻变存储器的制造方法和阻变存储器, 专利授权, 2017, 第 3 作者, 专利号: CN107275482A( 29 ) 一种提高RRAM均一性的方法及RRAM器件, 发明专利, 2017, 第 3 作者, 专利号: CN107221598A( 30 ) 一种提高RRAM均一性的方法及RRAM器件, 发明专利, 2017, 第 3 作者, 专利号: CN107221598A( 31 ) 用于双极性阻变存储器的选择器件及其制备方法, 专利授权, 2017, 第 3 作者, 专利号: CN107204397A( 32 ) 用于双极性阻变存储器的选择器件及其制备方法, 专利授权, 2017, 第 3 作者, 专利号: CN107204397A( 33 ) 基于过渡金属氧化物的选择器及其制备方法, 发明专利, 2017, 第 3 作者, 专利号: CN106910759A( 34 ) 基于过渡金属氧化物的选择器及其制备方法, 发明专利, 2017, 第 3 作者, 专利号: CN106910759A( 35 ) 基于两端器件的脉冲参数测试系统, 发明专利, 2016, 第 3 作者, 专利号: CN105957558A( 36 ) 基于两端器件的脉冲参数测试系统, 发明专利, 2016, 第 3 作者, 专利号: CN105957558A( 37 ) 一种自选通阻变存储器件及其制备方法, 发明专利, 2016, 第 3 作者, 专利号: CN105826468A( 38 ) 一种自选通阻变存储器件及其制备方法, 发明专利, 2016, 第 3 作者, 专利号: CN105826468A( 39 ) 一种有效提高阻变存储器耐久性的方法, 发明专利, 2015, 第 7 作者, 专利号: CN104464801A( 40 ) 一种有效提高阻变存储器耐久性的方法, 发明专利, 2015, 第 7 作者, 专利号: CN104464801A( 41 ) 对RRAM存储器耐久性参数进行测试的方法, 发明专利, 2014, 第 5 作者, 专利号: CN104134468A( 42 ) 对RRAM存储器耐久性参数进行测试的方法, 发明专利, 2014, 第 5 作者, 专利号: CN104134468A( 43 ) 一种对RRAM存储器保持时间参数进行测试的方法, 发明专利, 2014, 第 5 作者, 专利号: CN104134463A( 44 ) 一种对RRAM存储器保持时间参数进行测试的方法, 发明专利, 2014, 第 5 作者, 专利号: CN104134463A( 45 ) 一种降低阻变存储器电铸电压的方法, 发明专利, 2014, 第 6 作者, 专利号: CN103956428A( 46 ) 一种降低阻变存储器电铸电压的方法, 发明专利, 2014, 第 6 作者, 专利号: CN103956428A( 47 ) 一种对RRAM器件的脉冲参数进行测试的电路, 发明专利, 2014, 第 6 作者, 专利号: CN103531250A( 48 ) 一种对RRAM器件的脉冲参数进行测试的电路, 发明专利, 2014, 第 6 作者, 专利号: CN103531250A( 49 ) 一种制备纳米器件的方法, 发明专利, 2014, 第 6 作者, 专利号: CN103500701A( 50 ) 一种制备纳米器件的方法, 发明专利, 2014, 第 6 作者, 专利号: CN103500701A
出版信息
发表论文
[1] Ying Sun, Yuchen Gu, xukezhi, liudong, chenbing, xuxiaoxin, chengran. A Universal Temperature-Dependent Carrier Backscattering Model for Low-Temperature High-Performance CMOS Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2024, 第 6 作者 通讯作者 71(1): 107-113, [2] zhengxu, wulizhou, xieyuanlu, LaiJinru, Sun, Wenxuan, Yu, Jie, dongdanian, yuzhaoan, xuexiaoyong, Chen Bing, YangYan, xuxiaoxin, liu qi, LiuMing. Machine Learning-Assisted Prediction Model Collaborated with Resurrection Algorithm. Advanced Electronic Materials[J]. 2024, 第 12 作者 通讯作者 10(2300504): 1-10, [3] Wenxuan Sun, liyi, Zhang, Woyu, zhengxu, dongdanian, YuJie, LaiJinru, fanshaoyang, xuxiaoxin, WangHongzhou, LiuMing. High Area Efficiency (6 TOPS/mm2) Multimodal Neuromorphic Computing System Implemented by 3D Multifunctional RRAM Array. 2023 IEEE国际电子器件会议(IEDM 2023). 2023, 第 9 作者 通讯作者 [4] Dong, Danian, Lai, Jinru, Yang, Yan, Gong, Tiancheng, Zheng, Xu, Sun, Wenxuan, Yu, Jie, Fan, Shaoyang, Xu, Xiaoxin. Systematical Investigation of Flicker Noise in 14 nm FinFET Devices towards Stochastic Computing Application. MICROMACHINES[J]. 2023, 第 9 作者 通讯作者 14(11): http://dx.doi.org/10.3390/mi14112098.[5] Li, Xiaoran, Wang, Yiming, Yang, Yiming, Lv, Shidong, Luo, Qing, Wang, Xinghua, Xu, Xiaoxin, Lei, Dengyun, Zhang, Feng. A 144-fJ/Bit Reliable and Compact TRNG Based on the Diffusive Resistance of 3-D Resistive Random Access Memory. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023, 第 7 作者 通讯作者 http://dx.doi.org/10.1109/TED.2023.3288839.[6] zheng xu, wulizhou, Liu Yixuan, Wu Qiqiao, Li Yi, Lai, jinru, Sun, Wenxuan, Dong Danian, YuJie, xuxiaoxin, Zhang Wenchang, LiuMing. Point-of-Care Testing (POCT) System based on selfRecovery Memoristor Chip with Low Energy Consuption(1.547 TOPS/W) and High Recognition (1142 fram/s). 2023 IEEE国际电子器件会议(IEDM 2023). 2023, 第 10 作者 通讯作者 [7] Jie Yu, Woyu Zhang, Danian Dong, Wenxuan Sun, Jinru Lai, Xu Zheng, Tiancheng Gong, Yi Li, 尚大山, Guozhong Xing, Xiaoxin Xu, Peng Huang. Long-Term Accuracy Enhancement of Binary Neural Networks Based on Optimized Three-Dimensional Memristor Array. MICROMACHINES[J]. 2022, 第 11 作者13(2): [8] 许晓欣. Effect of Bit Line Voltage Stress on Half-Selected Device in 1T1R Array. 2022 IEEE Silicon Nanoelectronics Workshop[J]. 2022, 第 1 作者 通讯作者 [9] Huoqiang, Xiaoxin Xu, Qing Luo, Guozhong Xing, Feng Zhang, Ming Liu. A Computing-in-memory macro with three-dimensional random-access memory. Nature Electronics[J]. 2022, 第 2 作者[10] Woyu Zhang, Wang, Shaocong, Yi Li, Xiaoxin Xu, Danian Dong, Nanjia Jiang, Fei Wang, Zeyu Guo, Renrui Fang, Chunmeng Dou, Kai Ni, Wang, Zhongrui, Dashan Shang, Ming Liu. Few-shot graph learning with robust and energy-efficient memory-augmented graph neural network (MAGNN) based on homogeneous computing-in-memory. 2022 IEEE Symposium on VLSI Technology and Circuits. 2022, 第 4 作者[11] Wenxuan Sun, Woyu Zhang, Jie Yu, Yi Li, Zeyu Guo, Jinru Lai, Danian Dong, Xu Zheng, Fei Wang, Shaoyang Fan, Xiaoxin Xu, Dashan Shang, Ming Liu. 3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing. IEEE Symposium on VLSI Technology. 2022, 第 11 作者 通讯作者 [12] Yi Li, 张握瑜, 许晓欣, Yifan He, 董大年, Nanjia Jiang, Fei Wang, 郭泽钰, Wang, Shaocong, 窦春萌, 刘勇攀, Wang, Zhongrui, 尚大山. Mixed-precision continual learning based on computational resistance random access memory. Advanced Intelligent Systems[J]. 2022, 第 3 作者4: 2200026, [13] 窦春萌, 许晓欣, 张续猛, 王琳方, 叶望, 安俊杰, 杨建国, 罗庆, 时拓, 刘璟, 尚大山, 张峰, 刘琦, 刘明. Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System. IEDM. 2021, 第 2 作者[14] Linfang Wang, Ye, Wang, 窦春萌, Si, X, 许晓欣, Liu, Jing, 尚大山, 高建峰, Liu, Qi. Efficient and Robust Nonvolatile Computing-In-Memory based on Voltage Division in 2T2R RRAM with Input-Dependent Sensing Control. IEEE Transactions on Circuits and Systems II: Express Briefs[J]. 2021, 第 5 作者[15] Ying Zhao, 汪令飞, Zhenhua Wu, Franz Schanovsky, 许晓欣, Hong Yang, Lai, jinru, Donyang Liu, Xichen Chuai, Yue Su, Xingsheng Wang, Ling Li, Ming Liu. A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes. Symposium on VLSI Technology,. 2021, 第 5 作者[16] Wang, Linfang, 窦春萌, Ye, Wang, Lai, jinru, Liu, Jing, Yang, Jianguo, Si, X, Huo, Changxing, 许晓欣, Liu, Qi, 尚大山, Liu, Ming. A 14 nm 100Kb 2T2R transpose RRAM with >150X resistance ratio enhancement and 27.95% reduction on energy-latency product using low-power near threshold read operation and fast data-line current stabling scheme. IEEE Symposium on VLSI Technology[J]. 2021, 第 9 作者 通讯作者 [17] Jiang, Pengfei, Luo, Qing, Xu, Xiaoxin, Gong, Tiancheng, Yuan, Peng, Wang, Yuan, Gao, Zhaomeng, Wei, Wei, Tai, Lu, Lv, Hangbing. Wake-Up Effect in HfO2-Based Ferroelectric Films. ADVANCED ELECTRONIC MATERIALS. 2021, 第 3 作者7(1): http://dx.doi.org/10.1002/aelm.202000728.[18] Yu, Jie, 李熠, Sun, Wenxuan, 张握瑜, 许晓欣, 尚大山, Liu, Ming. Energy efficient and robust reservoir computing system using ultrathin (3.5 nm) ferroelectric tunneling junctions for temporal data learning. IEEE Symposium on VLSI Technology. 2021, 第 5 作者 通讯作者 [19] Zhou, Keji, Xue, Xiaoyong, Yang, Jianguo, Xu, Xiaoxin, Lv, Hangbing, Jing, Minge, Li, Jing, Zeng, Xiaoyang, Liu, Ming. High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications. IEEE JOURNAL OF SOLID-STATE CIRCUITS[J]. 2021, 第 4 作者56(3): 988-1000, http://dx.doi.org/10.1109/JSSC.2020.3025756.[20] Lai, Jinru, Sun, Wenxuan, Yu, Jie, Dong, Danian, Zheng, Xu, Xu, Xiaoxin, IEEE. Reliability Issues of Half-Selected Cells in Resistive Random Access Memory Array Integrated with 14nm FinFET. 2021 SILICON NANOELECTRONICS WORKSHOP (SNW). 2021, 第 11 作者37-38, [21] 龚天成, 胡乔, 张栋林, 蒋海军, 杨建国, 许晓欣, 罗庆, 刘琦, 吕杭炳, 刘明. A 128kb Stochastic Computing Chip based on RRAM Flicker Noise with High Noise Density and Nearly Zero Autocorrelation on 28-nm CMOS Platform. 2021 IEEE International Electron Devices Meeting (IEDM). 2021, 第 6 作者 通讯作者 [22] Gong, Tiancheng, Dong, Danian, Luo, Qing, Xu, Xiaoxin, Yang, Jianguo, Yu, Jie, Ding, Qingting, Lv, Hangbing, Liu, Ming. Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 第 4 作者42(3): 312-314, https://www.webofscience.com/wos/woscc/full-record/WOS:000622098100004.[23] Zheng, Xu, Liu, Jing, Dong, Danian, Yu, Zhaoan, Song, Jiayou, Liou, Juin J, Xu, Xiaoxin, Yang, Xiaonan. Back-End-of-Line-Based Resistive RAM in 0.13 mu m Partially-Depleted Silicon-on-Insulator Process for Highly Reliable Irradiation-Resistant Application. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 第 7 作者 通讯作者 42(1): 30-33, http://dx.doi.org/10.1109/LED.2020.3037072.[24] XiaoXinXu, QingLuo, TianChengGong, HangBingLv, QiLiu, MingLiu. Resistive switching memory for high density storage and computing. Chinese Physics B[J]. 2021, 第 1 作者30(5): 58702-058702, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/abe0c4.[25] 余兆安, 董大年, 姚志宏, 许晓欣, 吕杭炳. 一种忆阻器阵列的阻值调制测试系统. 微纳电子与智能制造. 2021, 第 4 作者3(4): 72-77, http://lib.cqvip.com/Qikan/Article/Detail?id=00002FUILH387JP0MNDO5JP16NR.[26] Xi Zheng, Guozhong Xing, 许晓欣. Effect of conductive filament morphology on soft error of oxide based Resistive Random Access Memory. 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)[J]. 2021, 第 3 作者 通讯作者 247-248, [27] 许晓欣. Scaling Potential Analysis for the CMOS Compatible Ox-RRAM. 2021 IEEE International Memory Workshop (IMW)[J]. 2021, 第 1 作者[28] Gao, Rui, Lei, Dengyun, He, Zhiyuan, Chen, Yiqiang, Huang, Yun, En, Yunfei, Xu, Xiaoxin, Zhang, Feng. Effect of Moisture Stress on the Resistance of HfO2/TaOx-Based 8-Layer 3D Vertical Resistive Random Access Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 第 7 作者41(1): 38-41, https://www.webofscience.com/wos/woscc/full-record/WOS:000507305400010.[29] zheng xu, Liu Jing, dongdanian, Yuzhaoan, SongJiayou, xuxiaoxin, Yang Xiaonan. Back-end-of-line-based resistive RAM in 0.13 μ m partially-depleted silicon-on-insulator process for highly reliable irradiation- resistant application. Ieee Electron Device Letters[J]. 2020, 第 6 作者 通讯作者 [30] Xu, Xiaoxin, Yu, Jie, Gong, Tiancheng, Yang, Jianguo, Yin, Jiahao, Dong, Da Nian, Luo, Qing, Liu, Jing, Yu, Zhaoan, Liu, Qi, Lv, Hangbing, Liu, Ming, IEEE. First Demonstration of OxRRAM Integration on 14nm FinFet Platform and Scaling Potential Analysis towards Sub-10nm Node. 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). 2020, 第 1 作者[31] Qing Luo, Yan Cheng, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei, Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu, Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv, Ming Liu. A highly CMOS compatible hafnia-based ferroelectric diode. NATURE COMMUNICATIONS[J]. 2020, 第 12 作者11(1): https://doaj.org/article/c59ff6c19c2849768da9016b0a30f359.[32] Luo, Qing, Zhang, Xumeng, Yu, Jie, Wang, Wei, Gong, Tiancheng, Xu, Xiaoxin, Yin, Jiahao, Yuan, Peng, Tai, Lu, Dong, Danian, Lv, Hangbing, Long, Shibing, Liu, Qi, Liu, Ming. Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 第 6 作者40(5): 718-721, http://dx.doi.org/10.1109/LED.2019.2904279.[33] Yu Jie, Xu Xiaoxin, Gong Tiancheng, Luo Qing, Tai Lu, Li Xiaoyan, Yuan Peng, Dong Danian, Yin Jiahao, Ding Qingting, Lv Hangbing, Liu Ming, IEEE. Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method. 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC). 2019, 第 11 作者http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000483036000027.[34] Yin, Jiahao, Dou, Chunmeng, Dong, Danian, Yu, Jie, Xu, Xiaoxin, Luo, Qing, Gong, Tiancheng, Tai, Lu, Yuan, Peng, Xue, Xiaoyong, Liu, Ming, Lv, Hangbing. A 0.75V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique. IEICE ELECTRONICS EXPRESS[J]. 2019, 第 5 作者16(12): http://dx.doi.org/10.1587/elex.16.20190201.[35] Luo, Qing, Ma, Haili, Su, Hailei, Xue, KanHao, Cao, Rongrong, Gao, Zhaomeng, Yu, Jie, Gong, Tiancheng, Xu, Xiaoxin, Yin, Jiahao, Yuan, Peng, Tai, Lu, Dong, Danian, Long, Shibing, Liu, Qi, Miao, XiangShui, Lv, Hangbing, Liu, Ming. Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1-XO2 Thin Films. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 第 9 作者40(4): 570-573, http://dx.doi.org/10.1109/LED.2019.2902609.[36] Yu, Jie, Xu, Xiaoxin, Gong, Tiancheng, Luo, Qing, Dong, Danian, Yuan, Peng, Tai, Lu, Yin, Jiahao, Zhu, Xi, Wu, Xiulong, Lv, Hangbing, Liu, Ming. Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure. NANOSCALE RESEARCH LETTERS[J]. 2019, 第 2 作者 通讯作者 14(1): https://doaj.org/article/7ee6b4b8ee664d50b8088691c5f2d980.[37] Danian Dong, Xiulong Wu, Tiancheng Gong, Ming Liu, Hangbing Lv, Jie Yu, Xiaoxin Xu, Xi Zhu, Jiahao Yin, Peng Yuan, Qing Luo, Lu Tai. Suppression of filament overgrowth in conductive bridge random access memory by tao/tao bi-layer structure.. NANOSCALE RESEARCH LETTERS[J]. 2019, 第 7 作者Vol.14 no.1: 111, http://www.corc.org.cn/handle/1471x/2205900.[38] Ma, Haili, Zhang, Xumeng, Wu, Facai, Luo, Qing, Gong, Tiancheng, Yuan, Peng, Xu, Xiaoxin, Liu, Yu, Zhao, Shengjie, Zhang, Kaiping, Lu, Cheng, Zhang, Peiwen, Feng, Jie, Lv, Hangbing, Liu, Ming. A Self-Rectifying Resistive Switching Device Based on HfO2/TaOx Bilayer Structure. 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Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory. SCIENTIFIC REPORTS[J]. 2015, 第 2 作者5: http://dx.doi.org/10.1038/srep07764.[72] Banerjee, Writam, Xu, Xiaoxin, Liu, Hongtao, Lv, Hangbing, Liu, Qi, Sun, Haitao, Long, Shibing, Liu, Ming. Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 第 2 作者36(4): 333-335, http://dx.doi.org/10.1109/LED.2015.2407361.[73] Xu, Xiaoxin, Lv, Hangbing, Liu, Hongtao, Gong, Tiancheng, Wang, Guoming, Zhang, Meiyun, Li, Yang, Liu, Qi, Long, Shibing, Liu, Ming. Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation. 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科研活动
科研项目
( 1 ) 阻变存储器阵列可靠性的拖尾效应研究, 负责人, 国家任务, 2019-01--2021-12( 2 ) 具有多时间尺度神经动力学的忆阻器件研究, 负责人, 国家任务, 2021-12--2026-11( 3 ) XXXXX配套技术及验证, 负责人, 中国科学院计划, 2021-01--2023-12( 4 ) 基于阻变存储器的阵列控制器芯片研发及示范应用, 负责人, 地方任务, 2020-06--2022-06( 5 ) 中科院青年创新促进会优秀会员, 负责人, 中国科学院计划, 2023-01--2025-12
参与会议
(1)Scaling Potential Analysis for the CMOS Compatible Ox-RRAM 2021-05-09(2)Integration of Resistive switching memory on Advanced Technology node 2021-04-09(3)First Demonstration of OxRRAM Integration on 14nm FinFet Platform and Scaling Potential Analysis towards Sub-10nm Node 2020-12-06(4)阻变存储器及微缩研究 全国电子信息青年科学家论坛暨第三届半导体青年学术会议 2020-10-29(5)40×retention improvement by eliminating resistance relaxation with high temperature forming in 28 nm RRAM chip 2018-12-15