新型半导体器件

集成电路先导工艺

氧化铪基铁电材料与器件

薄膜晶体管与三维集成

先进半导体探测器

   

080903-微电子学与固体电子学
085400-电子信息

集成电路工程
集成电路先导工艺技术

2016-11--2017-12   德克萨斯大学奥斯汀分校   访问学者
2003-09--2009-07   中国科学院微电子研究所   工学博士
1998-09--2002-07   山东大学   工学学士

   

2021-07~现在, 中国科学院微电子研究所, 研究员
2011-09~2021-07,中国科学院微电子研究所, 副研究员
2009-07~2011-09,中国科学院微电子研究所, 助理研究员

   

（1） 中科院微电子所研究生喜爱的导师, 研究所（学校）, 2021
（2） 中科院微电子所先导中心科研之星, 其他, 2020
（3） 中科院微电子所先导中心科研之星, 其他, 2019
（4） 中科院微电子所先导中心科研之星, 其他, 2018
（5） 中国科学院微电子研究所优秀共产党员, 研究所（学校）, 2016
（6） 中国科学院微电子研究所先进工作者, , 研究所（学校）, 2014
（7） 中国科学院微电子器件与集成技术重点实验室优秀员工, 研究所（学校）, 2012

（ 1 ） 一种硅像素探测器及其制备方法, 发明专利, 2022, 第 3 作者, 专利号: CN114156292A

（ 2 ） 垂直纳米线晶体管与其制作方法, 专利授权, 2022, 第 4 作者, 专利号: CN108428634B

（ 3 ） 一种半导体器件及制备方法, 发明专利, 2021, 第 1 作者, 专利号: CN113793806A

（ 4 ） 一种铁电场效应管及其制备方法以及铁电存算器件, 发明专利, 2021, 第 3 作者, 专利号: CN113782607A

（ 5 ） 冷源MOS晶体管及制作方法, 发明专利, 2021, 第 3 作者, 专利号: CN113745314A

（ 6 ） 硅基探测器的制造方法及用于其的热处理装置, 发明专利, 2021, 第 2 作者, 专利号: CN113675296A

（ 7 ） 半导体器件的制造方法, 发明专利, 2021, 第 2 作者, 专利号: CN107293492B

（ 8 ） 一种氧化物半导体器件及其制备方法, 发明专利, 2021, 第 2 作者, 专利号: CN113471295A

（ 9 ） 硅基探测器及其制作方法, 发明专利, 2021, 第 1 作者, 专利号: CN113299785A

（ 10 ） 一种半导体器件及制备方法, 专利授权, 2021, 第 1 作者, 专利号: CN113192891A

（ 11 ） 一种铁电薄膜及其沉积方法、应用, 发明专利, 2021, 第 2 作者, 专利号: CN113178478A

（ 12 ） 一种HfO 2 基铁电薄膜及其沉积方法, 发明专利, 2021, 第 2 作者, 专利号: CN113178477A

（ 13 ） 一种存储器及其制造方法, 发明专利, 2021, 第 1 作者, 专利号: CN113013235A

（ 14 ） 一种漂移探测器的双面制备方法及漂移探测器, 专利授权, 2021, 第 1 作者, 专利号: CN110854222B

（ 15 ） 一种漂移探测器的制备方法及漂移探测器, 专利授权, 2021, 第 1 作者, 专利号: CN110854223B

（ 16 ） 一种绝缘体上半导体结构及其抗总剂量辐照加固方法, 发明专利, 2020, 第 2 作者, 专利号: CN112086516A

（ 17 ） X射线阵列传感器、探测器及其制作方法, 发明专利, 2020, 第 2 作者, 专利号: CN111799351A

（ 18 ） 隧穿场效应晶体管及其制造方法, 专利授权, 2020, 第 1 作者, 专利号: CN106558609B

（ 19 ） 隧穿场效应晶体管及其制造方法, 发明专利, 2020, 第 1 作者, 专利号: CN106504989B

（ 20 ） 半导体器件与其制作方法, 发明专利, 2018, 第 4 作者, 专利号: CN108493246A

（ 21 ） 垂直纳米线晶体管与其制作方法, 发明专利, 2018, 第 4 作者, 专利号: CN108428634A

（ 22 ） 量子点器件及其制作方法, 专利授权, 2018, 第 4 作者, 专利号: CN108417635A

（ 23 ） 纳米线阵列围栅MOSFET结构及其制作方法, 专利授权, 2018, 第 5 作者, 专利号: CN108364910A

（ 24 ） 隧穿场效应晶体管及其制造方法, 专利授权, 2018, 第 1 作者, 专利号: CN108369960A

（ 25 ） 一种遂穿场效应晶体管及其制造方法, 发明专利, 2018, 第 2 作者, 专利号: CN108321197A

（ 26 ） 隧穿场效应晶体管及其制造方法, 发明专利, 2018, 第 1 作者, 专利号: CN108140673A

（ 27 ） N型MOSFET的制作方法, 发明专利, 2018, 第 2 作者, 专利号: CN108039368A

（ 28 ） 一种半导体器件的制造方法, 发明专利, 2018, 第 1 作者, 专利号: CN108010966A

（ 29 ） 半导体CMOS器件的制作方法, 发明专利, 2018, 第 2 作者, 专利号: CN107910298A

（ 30 ） 半导体器件的制造方法, 发明专利, 2018, 第 3 作者, 专利号: CN107845605A

（ 31 ） P型MOSFET的制作方法, 发明专利, 2018, 第 2 作者, 专利号: CN107749398A

（ 32 ） 半导体器件制造方法, 发明专利, 2017, 第 1 作者, 专利号: CN106558481A

（ 33 ） 半导体器件制造方法, 发明专利, 2017, 第 1 作者, 专利号: CN106558481A

（ 34 ） 一种半导体器件的制造方法, 发明专利, 2016, 第 1 作者, 专利号: CN103594370B

（ 35 ） CMOS器件及其制造方法, 发明专利, 2016, 专利号: CN105428361A

（ 36 ） n型半导体器件及其制造方法, 发明专利, 2015, 第 1 作者, 专利号: CN102856377B

（ 37 ） 一种半导体器件的制造方法, 发明专利, 2015, 第 1 作者, 专利号: CN104979186A

（ 38 ） 一种半导体器件的制造方法, 专利授权, 2015, 第 1 作者, 专利号: CN104752202A

（ 39 ） 一种栅堆叠及其制造方法, 发明专利, 2015, 第 1 作者, 专利号: CN104377236A

（ 40 ） 半导体器件制造方法, 发明专利, 2014, 第 1 作者, 专利号: CN104078363A

（ 41 ） 等平面场氧化隔离结构及其形成方法, 发明专利, 2014, 第 1 作者, 专利号: CN103855072A

（ 42 ） 半导体器件的制造方法, 发明专利, 2014, 第 2 作者, 专利号: CN103855016A

（ 43 ） 半导体器件的制造方法, 发明专利, 2014, 专利号: CN103854982A

（ 44 ） P型MOSFET的制造方法, 发明专利, 2014, 第 2 作者, 专利号: CN103855007A

（ 45 ） N型MOSFET的制造方法, 发明专利, 2014, 第 3 作者, 专利号: CN103855013A

（ 46 ） N型MOSFET的制造方法, 发明专利, 2014, 第 2 作者, 专利号: CN103855012A

（ 47 ） P型MOSFET的制造方法, 发明专利, 2014, 第 4 作者, 专利号: CN103854983A

（ 48 ） 半导体器件的制造方法, 发明专利, 2014, 第 3 作者, 专利号: CN103855006A

（ 49 ） 形成半导体器件替代栅的方法以及制造半导体器件的方法, 发明专利, 2014, 第 1 作者, 专利号: CN103854980A

（ 50 ） 一种提高电子束曝光效率的方法, 发明专利, 2014, 第 2 作者, 专利号: CN102466966B

（ 51 ） 超陡倒掺杂沟道的形成方法、半导体器件及其制造方法, 发明专利, 2013, 第 4 作者, 专利号: CN103367128A

（ 52 ） CMOS器件及其制造方法, 发明专利, 2013, 第 3 作者, 专利号: CN103325787A

（ 53 ） 一种分子尺度界面SiO 2 的形成和控制方法, 发明专利, 2013, 第 2 作者, 专利号: CN103137460A

（ 54 ） 一种分子尺度界面SiO 2 的形成和控制方法, 发明专利, 2013, 第 2 作者, 专利号: CN103137460A

（ 55 ） 一种半导体结构及其制造方法, 发明专利, 2013, 第 3 作者, 专利号: CN103107091A

（ 56 ） 一种互补型金属氧化物半导体场效应晶体管的制备方法, 发明专利, 2013, 第 3 作者, 专利号: CN102915917A

（ 57 ） 一种半导体器件的替代栅集成方法, 发明专利, 2013, 第 1 作者, 专利号: CN102856180A

（ 58 ） n型半导体器件及其制造方法, 发明专利, 2013, 第 1 作者, 专利号: CN102856377A

（ 59 ） 半导体器件的制造方法, 发明专利, 2012, 第 3 作者, 专利号: CN101958278B

（ 60 ） 一种高k栅介质界面优化方法, 发明专利, 2012, 第 1 作者, 专利号: CN102810468A

（ 61 ） 一种隧穿场效应晶体管及其制造方法, 发明专利, 2012, 第 1 作者, 专利号: CN102751325A

（ 62 ） 锗衬底上制备金属-氧化物-半导体场效应晶体管方法, 发明专利, 2012, 第 2 作者, 专利号: CN102737999A

（ 63 ） 半导体器件的制造方法, 发明专利, 2012, 第 3 作者, 专利号: CN102543838A

（ 64 ） 一种栅极刻蚀的方法, 发明专利, 2012, 第 1 作者, 专利号: CN102456569A

（ 65 ） p型半导体器件及其制造方法, 发明专利, 2012, 第 1 作者, 专利号: CN102339858A

（ 66 ） p型半导体器件及其制造方法, 发明专利, 2012, 第 1 作者, 专利号: CN102339858A

（ 67 ） 一种用于CMOS器件的双金属栅双高介质的集成方法, 发明专利, 2011, 第 2 作者, 专利号: CN102280376A

（ 68 ） 一种适用于NMOS器件的金属栅功函数的调节方法, 发明专利, 2011, 第 2 作者, 专利号: CN102254805A

（ 69 ） 一种用于PMOS器件的金属栅功函数的调节方法, 发明专利, 2011, 第 2 作者, 专利号: CN102074469A

（ 70 ） 半导体器件的制造方法, 发明专利, 2011, 第 3 作者, 专利号: CN102044494A

（ 71 ） 一种钼铝氮金属栅的制备方法, 发明专利, 2010, 第 1 作者, 专利号: CN101930915A

（ 72 ） 一种双金属栅功函数的调节方法, 发明专利, 2010, 第 2 作者, 专利号: CN101800196A

（ 73 ） 一种铪硅铝氧氮高介电常数栅介质的制备方法, 发明专利, 2010, 第 1 作者, 专利号: CN101800178A

（ 74 ） 一种钽铝氮金属栅的制备方法, 发明专利, 2010, 第 1 作者, 专利号: CN101800173A

（ 75 ） 一种隧穿场效应晶体管及其制造方法, 发明专利, 2010, 第 1 作者, 专利号: CN101777580A

（ 76 ） 一种栅介质/金属栅集成结构的制备方法, 发明专利, 2010, 第 2 作者, 专利号: CN101728257A

（ 77 ） 一种制备高介电常数栅介质薄膜铪硅氧氮的方法, 发明专利, 2009, 第 1 作者, 专利号: CN101447420A

   

[1] Huo, Jiali, Zhang, Zhaohao, Zhang, Yadong, Zhang, Fan, Yan, Gangping, Tian, Guoliang, Xu, Haoqing, Zhan, Guohui, Xu, Gaobo, Zhang, Qingzhu, Yin, Huaxiang, Wu, Zhenhua. Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023, 第 9 作者http://dx.doi.org/10.1109/TED.2023.3269403.
[2] 张兆浩, 田国良, 霍嘉丽, 章帆, 张青竹, 许高博, 吴振华, 成岩, 刘艳, 殷华湘. Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. 中国科学 信息科学(英文版)[J]. 2023, 第 6 作者66(9): 200405, 
[3] Zhang, Yongkui, Li, Yangyang, Zhu, Huilong, Wang, Qi, Du, Yong, Lu, Shunshun, Li, Junjie, Kong, Zhenzhen, He, Xiaobin, Liu, Jinbiao, Li, Chen, Huang, Weixing, Xie, Lu, Xiao, Zhongrui, Xu, Gaobo, Wang, Guilei, Zhao, Chao, Luo, Jun. First Demonstration of Vertical Sandwich GAA TFETs with Self-Aligned High-k Metal Gates and Abrupt Doping Tunneling Junctions. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2023, 第 15 作者12(7): http://dx.doi.org/10.1149/2162-8777/ace8bb.
[4] Wu, Kewei, Jia, Xuewei, Yang, Tao, Li, Mengzhao, Wang, Wei, Zhao, Mei, Liang, Zhijun, da Costa, Joao Guimaraes, Fan, Yunyun, Cui, Han, Howard, Alissa, Kramberger, Gregor, Shi, Xin, Heng, Yuekun, Tan, Yuhang, Liu, Bo, Feng, Yuan, Li, Shuqi, Li, Mengran, Yu, Chengjun, Yang, Xuan, Zhai, Mingjie, Xu, Gaobo, Yan, Gangping, Zhai, Qionghua, Ding, Mingzheng, Luo, Jun, Yin, Huaxiang, Li, Junfeng. Design and testing of LGAD sensor with shallow carbon implantation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2023, 第 23 作者1046: http://dx.doi.org/10.1016/j.nima.2022.167697.
[5] Huo, Jiali, Zhang, Zhaohao, Zhang, Yadong, Zhang, Fan, Yan, Gangping, Tian, Guoliang, Xu, Haoqing, Zhan, Guohui, Xu, Gaobo, Zhang, Qingzhu, Yin, Huaxiang, Wu, Zhenhua. Stacked HZO/alpha-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023, 第 9 作者http://dx.doi.org/10.1109/TED.2023.3269403.
[6] Tian, Guoliang, Chen, Jia, Yan, Gangping, Li, Lianlian, Song, Zhiyu, Yang, Shangbo, Zhang, Zhaohao, Xu, Gaobo, Yin, Huaxiang, Yang, Shuai, Luo, Yanna, Bi, Jinshun, Wu, Zhenhua, Wang, Guilei, Zhao, Chao, Luo, Jun, Wang, Wenwu. Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric- Field-Modulated Multistate IGZO/AFE Nonvolatile Memory. ACS APPLIED ELECTRONIC MATERIALS. 2023, 第 8 作者  通讯作者  http://dx.doi.org/10.1021/acsaelm.2c01542.
[7] Zhang, Zhaohao, Mao, Shujuan, Xu, Gaobo, Zhang, Qingzhu, Wu, Zhenhua, Yin, Huaxiang, Ye, Tianchun. An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2023, 第 3 作者70(3): 1029-1033, http://dx.doi.org/10.1109/TED.2023.3239330.
[8] Zhang, Zhaohao, Zhang, Fan, Zhang, Yadong, Xu, Gaobo, Wu, Zhenhua, Zhang, Qingzhu, Li, Yongliang, Yin, Huaxiang, Luo, Jun, Wang, Wenwu, Ye, Tianchun. Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes. IEEE ELECTRON DEVICE LETTERS[J]. 2023, 第 4 作者44(1): 64-67, http://dx.doi.org/10.1109/LED.2022.3223335.
[9] Huo, Jiali, Zhang, Zhaohao, Zhang, Yadong, Zhang, Fan, Yan, Gangping, Tian, Guoliang, Xu, Haoqing, Zhan, Guohui, Xu, Gaobo, Zhang, Qingzhu, Yin, Huaxiang, Wu, Zhenhua. Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023, 第 9 作者http://dx.doi.org/10.1109/TED.2023.3269403.
[10] Tao Yang, Kewei Wu, Mei Zhao, Xuewei Jia, Yuhang Tan, Suyu Xiao, Kai Liu, Xiyuan Zhang, Congcong Wang, Mengzhao Li, Yunyun Fan, Shuqi Li, Chengjun Yu, Han Cui, Hao Zeng, Mingjie Zhai, Shuiting Xin, Maoqiang Jing, Gangping Yan, Qionghua Zhai, Mingzheng Ding, Gaobo Xu, Huaxiang Yin, Gregor Kramberger, Zhijun Liang, Joo Guimares da Costa, Xin Shi. Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling. NUCLEAR INST. AND METHODS IN PHYSICS RESEARCH, A. 2022, 第 22 作者1040: http://dx.doi.org/10.1016/j.nima.2022.167111.
[11] Zhao, Mei, Jia, Xuewei, Wu, Kewei, Yang, Tao, Li, Mengzhao, Fan, Yunyun, Yan, Gangping, Wang, Wei, Li, Mengran, Xu, Gaobo, Ding, Mingzheng, Yin, Huaxiang, Luo, Jun, Li, Junfeng, Shi, Xin, Liang, Zhijun, da Costa, Joao Guimaraes. Low Gain Avalanche Detectors with good time resolution developed by IHEP and IME for ATLAS HGTD project. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2022, 第 10 作者1033: http://dx.doi.org/10.1016/j.nima.2022.166604.
[12] Gu, Jie, Zhang, Qingzhu, Wu, Zhenhua, Luo, Yanna, Cao, Lei, Cai, Yuwei, Yao, Jiaxin, Zhang, Zhaohao, Xu, Gaobo, Yin, Huaxiang, Luo, Jun, Wang, Wenwu. Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY[J]. 2022, 第 9 作者10: 35-39, http://dx.doi.org/10.1109/JEDS.2021.3130123.
[13] Tian, Guoliang, Xu, Gaobo, Yin, Huaxiang, Yan, Gangping, Zhang, Zhaohao, Li, Lianlian, Sun, Xiaoting, Chen, Jia, Zhang, Yadong, Bi, Jinshun, Xiang, Jinjuan, Liu, Jinbiao, Wu, Zhenhua, Luo, Jun, Wang, Wenwu. Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology. ADVANCED MATERIALS INTERFACES[J]. 2022, 第 2 作者  通讯作者  9(24): 
[14] Xu, Renren, Yao, Jiaxin, Xu, Gaobo, Wei, Yanzhao, Yin, Huaxiang, Zhang, Qingzhu, Tian, Guoliang, Wang, Yanrong, Yan, Gangping, Xiang, Jinjuan, Bu, Weihai, Wu, Yongqin, Wu, Zhenhua, Luo, Jun, Wang, Wenwu. Experimental Investigation of Ultrathin Al2O3 Ex-Situ Interfacial Doping Strategy on Laminated HKMG Stacks via ALD. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 第 3 作者69(4): 1964-1971, http://dx.doi.org/10.1109/TED.2022.3152976.
[15] Li, Hongbo, Zhang, Chenchen, Xu, Gaobo, Ding, Xuefeng, Ni, Yue, Chen, Guidong, Chen, Dapeng, Zhou, Na, Mao, Haiyang. A Thermopile Infrared Sensor Array Pixel Monolithically Integrated with an NMOS Switch. MICROMACHINES[J]. 2022, 第 3 作者13(2): http://dx.doi.org/10.3390/mi13020258.
[16] Yan, Gangping, Yang, Hong, Liu, Weibing, Zhou, Na, Hu, Yanpeng, Shi, Yunfei, 高建峰, Tian, Guoliang, Zhang, Yadong, Fan, Linjie, Wang, Guilei, Xu, Gaobo, Bi, Jinshun, Yin, Huaxiang, Zhao, Chao, Luo, Jun. Mechanism Analysis of Ultralow Leakage and Abnormal Instability in InGaZnO Thin-Film Transistor Toward DRAM. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 第 12 作者  通讯作者  69(5): 2417-2422, http://dx.doi.org/10.1109/TED.2022.3159266.
[17] Xu, Qiuxia, Chen, Kai, Xu, Gaobo, Xiang, Jinjuan, 高建峰, Wang, Xiaolei, Li, Junjie, He, Xiaobin, Li, Junfeng, Wang, Wenwu, Chen, Dapeng. Physical Thickness 1.5-nm HfZrO Negative Capacitance NMOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 第 3 作者68(7): 3696-3701, 
[18] Gu, Jie, Wu, Zhenhua, Zhang, Qinzhu, Yao, Jiaxin, Zhang, Zhaohao, Li, Junjie, Cai, Yuwei, Xu, Renren, Xu, Gaobo, Yin, Huaxiang, Li, Junfeng, Wang, Wenwu, Ye, Tianchun. Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 第 9 作者68(1): 405-410, https://www.webofscience.com/wos/woscc/full-record/WOS:000602689000026.
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（ 1 ） 低功耗隧穿场效应晶体管研究及制备, 主持, 研究所自选, 2013-01--2013-12
（ 2 ） 双金属栅CMOS器件的可靠性退化机制及其抑制方法研究, 参与, 国家任务, 2014-01--2016-12
（ 3 ） 离子掺杂高k栅介质/金属栅技术研究及理论分析, 主持, 研究所自选, 2015-09--2016-08
（ 4 ） 碳基纳米电子器件与集成, 参与, 国家任务, 2016-07--2021-06
（ 5 ） 二维小像素探测器, 子课题负责人, 国家任务, 2016-07--2021-06
（ 6 ） 高迁移率二维料铟硒及其异质结构的物性、量子输运性质调控和器件应用研究, 参与, 国家任务, 2018-01--2021-12
（ 7 ） FINFET器件研究及制备, 主持, 企业合作, 2018-03--2018-11
（ 8 ） 超陡亚阈值摆幅低功耗新原理器件, 参与, 地方任务, 2018-08--2021-08 
（ 9 ） 新型铁电材料与器件研究及制备, 主持, 企业合作, 2018-12--2019-07
（ 10 ） 新型铁电存储器技术, 子课题负责人, 国家任务, 2018-01--2020-12
（ 11 ） 像素探测器芯片研制, 主持, 企业合作, 2019-06--2020-05
（ 12 ） 超高时间分辨探测器研制, 主持, 企业合作, 2019-11--2021-12
（ 13 ） 面向自由电子激光的大阵列硅基探测器关键技术研制, 参与, 中国科学院计划, 2020-01--2022-12
（ 14 ） 高密度三维IGZO DRAM存储器PVD, 主持, 地方任务, 2022-01--2024-12
（ 15 ） 超高帧频大动态范围X射线探测系统, 参与, 国家任务, 2022-01--2026-12

（ 16 ） 抗辐照硅超快传感器大规模制造关键技术概念验证, 负责人, 地方任务, 2022-12--2023-11