（超）宽禁带半导体材料与器件， 氮化铝射频压电器件

080903-微电子学与固体电子学

（超）宽禁带半导体材料与器件， 氮化铝射频压电器件

2015-08--2020-05   美国亚利桑那州立大学   博士研究生
2011-09--2015-07   复旦大学   学士

   

2024-09~现在, 中国科学院上海微系统与信息技术研究所, 副研究员
2020-09~2024-05,海思技术有限公司, 高级工程师

   

（1） 5.8-GHz Al_0.6Sc_0.4N Film Bulk Acoustic Resonator With High Electromechanical Coupling Coefficient of 23.9%, IEEE Microwave and Wireless Technology Letters, 2026, 第 6 作者  通讯作者
（2） An Integrated Synthesis Methodology for Wideband Ladder Acoustic Wave Filters, 2026 IEEE International Microwave Filter Workshop (IMFW), 2026, 第 3 作者  通讯作者
（3） Unveiling the Dispersive Nature of Periodically Poled Al(Sc)N-Based Bulk Acoustic Wave Resonators, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2026, 第 1 作者  通讯作者
（4） Ku-Band SMR-BAW Resonators With Improved Thermal Stability Utilizing Periodically Poled AlN Piezoelectric Layers, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2026, 第 5 作者  通讯作者
（5） Switchable Bulk Acoustic Resonator Based on AlN/Al 0.7 Sc 0.3 N Films, ELECTRONICS LETTERS, 2025, 第 3 作者
（6） The investigation of PFM method for characterization of ultra-thin piezoelectric films, 2025 IEEE International Ultrasonics Symposium (IUS), 2025, 第 6 作者  通讯作者
（7） Reconfigurable AlScN FBAR resonators and filters enabled by ferroelectric switching, 2025 IEEE International Ultrasonics Symposium (IUS), 2025, 第 2 作者  通讯作者
（8） A facile FBAR design for air gap replacement, 2025 IEEE International Ultrasonics Symposium (IUS), 2025, 第 7 作者  通讯作者
（9） Multi-state switching of ferroelectric AlScN FBAR via dynamic waveform modulation, 2025 IEEE International Ultrasonics Symposium (IUS), 2025, 第 7 作者  通讯作者
（10） Advancements in Super-High Frequency Al(Sc)N BAW Resonators for 5G and Beyond, ACOUSTICS, 2025, 第 5 作者  通讯作者
（11） TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells, Photovoltaics, IEEE Journal of, 2024, 
（12） V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 
（13） Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells, MATERIALS TODAY ENERGY, 2023, 第 3 作者
（14） Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 
（15） Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 第 5 作者
（16） Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells, IEEE JOURNAL OF PHOTOVOLTAICS, 2023, 
（17） Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405nm laser excitation, MICROELECTRONICS RELIABILITY, 2022, 第 5 作者
（18） Quantum efficiency of InGaN-GaN multi-quantum well solar cells: Experimental characterization and modeling, JOURNAL OF APPLIED PHYSICS, 2022, 第 5 作者
（19） Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress, MATERIALS TODAY, 2021, 第 16 作者
（20） Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells, SOLARENERGYMATERIALSANDSOLARCELLS, 2021, 第 4 作者
（21） Supercontinuum Generation in High Order Waveguide Mode with near-Visible Pumping Using Aluminum Nitride Waveguides, ACS PHOTONICS, 2021, 第 7 作者
（22） Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 第 6 作者
（23） Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment, APPLIED PHYSICS LETTERS, 2020, 第 6 作者
（24） GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress, MICROELECTRONICS RELIABILITY, 2020, 
（25） Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures, NANO ENERGY, 2020, 第 1 作者  通讯作者
（26） Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 第 3 作者
（27） GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 第 6 作者
（28） InGaN/GaN multi-quantum-well solar cells under high solar concentration and elevated temperatures for hybrid solar thermal-photovoltaic power plants, PROGRESS IN PHOTOVOLTAICS, 2020, 第 2 作者
（29） High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings, IEEE ELECTRON DEVICE LETTERS, 2020, 第 11 作者
（30） Temperature-dependent electrical properties of β-Ga_2O_3 Schottky barrier diodes on highly doped single-crystal substrates, JOURNAL OF SEMICONDUCTORS, 2019, 第 4 作者
（31） Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV-visible spectral wavelengths using volume current method, OPTICS EXPRESS, 2019, 第 4 作者
（32） Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device, NANOTECHNOLOGY, 2019, 第 1 作者
（33） Demonstration of low loss beta-Ga2O3 optical waveguides in the UV-NIR spectra, APPLIED PHYSICS LETTERS, 2019, 第 6 作者
（34） Demonstration of mechanically exfoliated beta-Ga2O3/GaN p-n heterojunction, APPLIED PHYSICS LETTERS, 2019, 第 8 作者
（35） Implantation-and etching-free high voltage vertical GaN p-n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing, APPLIED PHYSICS EXPRESS, 2019, 第 5 作者
（36） Effect of Proton Radiation on Ultrawide Bandgap AlN Schottky Barrier Diodes, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 第 5 作者
（37） Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability, IEEE ELECTRON DEVICE LETTERS, 2019, 第 3 作者
（38） High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects, ACS PHOTONICS, 2019, 第 1 作者
（39） Demonstration of 1.27 kV Etch-Then-Regrow GaN p-n Junctions With Low Leakage for GaN Power Electronics, IEEE ELECTRON DEVICE LETTERS, 2019, 第 3 作者
（40） Characterizations of the nonlinear optical properties for (010) and ((2)over-bar01) beta-phase gallium oxide, OPTICS EXPRESS, 2018, 第 3 作者
（41） Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition, APPLIED PHYSICS LETTERS, 2018, 第 6 作者
（42） Experimental demonstration of non-line-of-sight visible light communication with different reflecting materials using a GaN-based micro-LED and modified IEEE 802.11ac, AIP ADVANCES, 2018, 第 5 作者
（43） A Comparative Study on the Electrical Properties of Vertical ((2)over-bar01) and (010) beta-Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 第 3 作者
（44） Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN, APPLIED PHYSICS EXPRESS, 2018, 第 6 作者
（45） Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers, APPLIED PHYSICS LETTERS, 2018, 第 1 作者
（46） High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination, IEEE ELECTRON DEVICE LETTERS, 2018, 第 3 作者
（47） Optical Cavity Effects in InGaN Micro-Light-Emitting Diodes With Metallic Coating, IEEE PHOTONICS JOURNAL, 2017, 第 3 作者
（48） Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers, APPLIED PHYSICS LETTERS, 2017, 第 2 作者
（49） Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well, JOURNAL OF APPLIED PHYSICS, 2017, 第 3 作者
（50） Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV, IEEE ELECTRON DEVICE LETTERS, 2017, 第 3 作者
（51） Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2017, 第 2 作者
（52） Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications, OPTICS EXPRESS, 2017, 第 3 作者
（53） Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress, APPLIED PHYSICS LETTERS, 2017, 第 1 作者
（54） Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes, IEEE ELECTRON DEVICE LETTERS, 2017, 第 2 作者
（55） Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency, APPLIED PHYSICS LETTERS, 2017, 第 1 作者
（56） Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations, APPLIED PHYSICS LETTERS, 2017, 第 2 作者
（57） Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK, OPTICS EXPRESS, 2017, 第 6 作者
（58） Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model, JOURNAL OF APPLIED PHYSICS, 2016, 第 1 作者  通讯作者
（59） Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications, JOURNAL OF APPLIED PHYSICS, 2016, 第 3 作者
（60） Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating, OPTICS EXPRESS, 2016, 第 4 作者