红外光谱技术与系统、固体光谱学与半导体光电子物理

主要从事新型红外调制光谱技术和窄禁带半导体电子结构机理研究。发展多/变条件红外调制光致发光谱和光调制反射谱方法，数量级提升关键指标；实现用于窄禁带焦平面阵列纳米材料均匀性表征的中、远红外空间分辨红外调制光致发光扫描成像方法；开展窄禁带半导体薄膜、量子阱和纳米线等电子结构的红外光谱研究，在重要红外探测材料关键性能表征与瓶颈性难题破解方面发挥重要作用。发表Appl. Phys. Lett.、Nano Lett.、J. Appl. Phys.、Opt. Lett.等国际期刊研究论文30余篇，获授权发明专利2项。 

当前主要研究兴趣包括基于傅立叶变换红外光谱仪的先进微区/磁光红外调制光谱方法探索与系统研制、窄禁带半导体与低维结构的多/变条件调制光谱分析与光电特性研究。

   

080903-微电子学与固体电子学
070205-凝聚态物理

红外光谱技术
红外光电子物理
半导体材料与器件物理

2010-08--2015-06   中国科学院上海技术物理研究所   博士
2006-09--2010-06   华南理工大学   学士

博士研究生

博士

2017-10--                中国科学院上海技术物理研究所   副研究员

2015-07--2017-09   中国科学院上海技术物理研究所   助理研究员

   

（ 1 ） 快速检测II型红外超晶格界面质量的光谱方法和装置, 发明, 2015, 第 2 作者, 专利号: ZL201310039046.X
（ 2 ） 二维分辨扫描成像红外调制光致发光光谱测试装置及方法, 发明, 2016, 第 2 作者, 专利号: ZL201410120925.X
（ 3 ） 消除大气吸收干扰的红外光致发光光路系统和实验方法, 发明, 2016, 第 2 作者, 专利号: CN201611055866.8
（ 4 ） 磁光光致发光光调制反射和光调制透射光谱联合测试系统, 发明, 2018, 第 2 作者, 专利号: CN201810598278.1

   

[1] Applied Physics Letters. 2023, 第 1 作者
[2] Optics Letters. 2022, 第 1 作者
[3] Dou, Cheng, Chen, Xiren, Chen, Qimiao, Song, Yuxin, Ma, Nan, Zhu, Liangqing, Tan, Chuan Seng, Han, Li, Yu, Dengguang, Wang, Shumin, Shao, Jun. Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS[J]. 2022, 第 2 作者259(4): http://dx.doi.org/10.1002/pssb.202100418.
[4] Xia, Hui, Liu, Yaqian, Wang, Hailu, Li, Tianxin, Tong, Zhongying, Chen, Xiren, Chen, Pingping, Hu, Weida, Lu, Wei. Electrically tunable spectral response in vertical nanowire arrays. Appl. Phys. Lett.[J]. 2022, 第 6 作者121(13): 132102, 
[5] Chen, Qimiao, Zhang, Liyao, Song, Yuxin, Chen, Xiren, Koelling, Sebastian, Zhang, Zhenpu, Li, Yaoyao, Koenraad, Paul M, Shao, Jun, Tan, Chuan Seng, Wang, Shumin, Gong, Qian. Highly Tensile-Strained Self-Assembled Ge Quantum Dots on InP Substrates for Integrated Light Sources. ACS APPLIED NANO MATERIALS[J]. 2021, 第 4 作者4(1): 897-906, http://dx.doi.org/10.1021/acsanm.0c03373.
[6] Chen, Xiren, Zhu, Liangqing, Zhang, Yanchao, Zhang, Fan, Wang, Shumin, Shao, Jun. Modulated Photoluminescence Mapping of Long-Wavelength Infrared InAs/GaSb Type-II Superlattice: In-Plane Optoelectronic Uniformity. PHYSICAL REVIEW APPLIED[J]. 2021, 第 1 作者15(4): http://dx.doi.org/10.1103/PhysRevApplied.15.044007.
[7] Suo, Fei, Tong, Jinchao, Chen, Xiren, Xu, Zhengji, Zhang, Dao Hua. Hole array enhanced dual-band infrared photodetection. OPTICS EXPRESS[J]. 2021, 第 3 作者29(5): 6424-6433, http://dx.doi.org/10.1364/OE.415987.
[8] Chen, Xiren, Xu, Zhicheng, Zhou, Yi, Zhu, Liangqing, Chen, Jianxin, Shao, Jun. Evaluating interface roughness and micro-fluctuation potential of InAs/GaSb superlattices by mid-infrared magnetophotoluminescence. APPLIED PHYSICS LETTERS[J]. 2020, 第 1 作者117(8): http://dx.doi.org/10.1063/5.0015540.
[9] Chen, Xiren, Zhu, Liangqing, Shao, Jun. Spatially resolved and two-dimensional mapping modulated infrared photoluminescence spectroscopy with functional wavelength up to 20 mu m. REVIEW OF SCIENTIFIC INSTRUMENTS[J]. 2019, 第 1 作者90(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000488831900005.
[10] Chen, Xiren, Zhao, Huan, Wu, Xiaoyan, Wang, Lijuan, Zhu, Liangqing, Song, Yuxin, Wang, Shumin, Shao, Jun. Bi-Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS[J]. 2019, 第 1 作者  通讯作者  256(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000476946300033.
[11] Yan, Bing, Chen, Xiren, Zhu, Liangqing, Pan, Wenwu, Wang, Lijuan, Yue, Li, Zhang, Xiaolei, Han, Li, Liu, Feng, Wang, Shumin, Shao, Jun. Bismuth-induced band-tail states in GaAsBi probed by photoluminescence. APPLIED PHYSICS LETTERS[J]. 2019, 第 2 作者114(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000458202800015.
[12] Yue, Li, Chen, Xiren, Zhang, Yanchao, Zhang, Fan, Wang, Lijuan, Shao, Jun, Wang, Shumin. Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2018, 第 2 作者742: 780-789, http://dx.doi.org/10.1016/j.jallcom.2018.01.329.
[13] Yue, Li, Chen, Xiren, Zhang, Yanchao, Kopaczek, Jan, Shao, Jun, Gladysiewicz, Marta, Kudrawiec, Robert, Ou, Xin, Wang, Shumin. Structural and optical properties of GaSbBi/GaSb quantum wells Invited. OPTICAL MATERIALS EXPRESS[J]. 2018, 第 2 作者8(4): 893-900, http://dx.doi.org/10.1364/OME.8.000893.
[14] Yue, Li, Song, Yuxin, Chen, Xiren, Chen, Qimiao, Pan, Wenwu, Wu, Xiaoyan, Liu, Juanjuan, Zhang, Liyao, Shao, Jun, Wang, Shumin. Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2017, 第 3 作者695: 753-759, http://dx.doi.org/10.1016/j.jallcom.2016.07.300.
[15] Chen, Xiren, Wu, Xiaoyan, Yue, Li, Zhu, Liangqing, Pan, Wenwu, Qi, Zhen, Wang, Shumin, Shao, Jun. Negative thermal quenching of below-bandgap photoluminescence in InPBi. APPLIED PHYSICS LETTERS[J]. 2017, 第 1 作者110(5): http://202.127.2.71:8080/handle/181331/12278.
[16] Wang, Lijuan, Pan, Wenwu, Chen, Xiren, Wu, Xiaoyan, Shao, Jun, Wang, Shumin. Influence of Bi on morphology and optical properties of InAs QDs. OPTICAL MATERIALS EXPRESS[J]. 2017, 第 3 作者7(12): 4249-4257, http://dx.doi.org/10.1364/OME.7.004249.
[17] Liu, Juanjuan, Pan, Wenwu, Wu, Xiaoyan, Cao, Chunfang, Li, Yaoyao, Chen, Xiren, Zhang, Yanchao, Wang, Lijuan, Yan, Jinyi, Zhang, Dongliang, Song, Yuxin, Shao, Jun, Wang, Shumin. Electrically injected GaAsBi/GaAs single quantum well laser diodes. AIP ADVANCES[J]. 2017, 第 6 作者7(11): https://doaj.org/article/400e8e69b4be4f46a208cb6a4766e248.
[18] Wang, Lijuan, Zhang, Liyao, Yue, Li, Liang, Dan, Chen, Xiren, Li, Yaoyao, Lu, Pengfei, Shao, Jun, Wang, Shumin. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application. CRYSTALS[J]. 2017, 第 5 作者7(3): https://doaj.org/article/52d991a371874cde9c484a5e06f10b6c.
[19] Chen, Xiren, Zhuang, Qiandong, Alradhi, H, Jin, Zh M, Zhu, Liangqing, Chen, Xin, Shao, Jun. Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires. NANO LETTERS[J]. 2017, 第 1 作者17(3): 1545-1551, http://202.127.2.71:8080/handle/181331/12289.
[20] Zhang, Liyao, Wu, Mingjian, Chen, Xiren, Wu, Xiaoyan, Spiecker, Erdmann, Song, Yuxin, Pan, Wenwu, Li, Yaoyao, Yue, Li, Shao, Jun, Wang, Shumin. Nanoscale distribution of Bi atoms in InP1-xBix. SCIENTIFIC REPORTS[J]. 2017, 第 3 作者7(1): https://doaj.org/article/3658f1c0f6c54661a166fe3df83e754c.
[21] Zhu, Liang, Song, Yuxin, Qi, Zhen, Wang, Shumin, Zhu, Liangqing, Chen, Xiren, Zha, Fangxing, Guo, Shaoling, Shao, Jun. Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence. JOURNAL OF LUMINESCENCE[J]. 2016, 第 6 作者169: 132-136, http://www.corc.org.cn/handle/1471x/2235311.
[22] Pan, Wenwu, Zhang, Liyao, Zhu, Liang, Li, Yaoyao, Chen, Xiren, Wu, Xiaoyan, Zhang, Fan, Shao, Jun, Wang, Shumin. Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS[J]. 2016, 第 5 作者120(10): http://www.corc.org.cn/handle/1471x/2375736.
[23] Chen, Xiren, Xing, Junliang, Zhu, Liangqing, Zha, F X, Niu, Zhichuan, Guo, Shaoling, Shao, Jun. GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence. JOURNAL OF APPLIED PHYSICS[J]. 2016, 第 1 作者119(17): http://ir.semi.ac.cn/handle/172111/27998.
[24] Qi, Zhen, Sheng, Fengfeng, Zhu, Liang, Chen, Xiren, Zhu, Liangqing, Zha, Fangxing, Yang, Jianrong, Shao, Jun. Annealing effects on Cd0.96Zn0.04Te crystals with Te inclusions probed by photoluminescence spectroscopy. PHYSICASTATUSSOLIDIBBASICSOLIDSTATEPHYSICS[J]. 2016, 第 4 作者253(8): 1612-1615, http://www.corc.org.cn/handle/1471x/2226817.
[25] Wu, Xiaoyan, Chen, Xiren, Pan, Wenwu, Wang, Peng, Zhang, Liyao, Li, Yaoyao, Wang, Hailong, Wang, Kai, Shao, Jun, Wang, Shumin. Anomalous photoluminescence in InP1-xBix. SCIENTIFIC REPORTS[J]. 2016, 第 2 作者6: http://dx.doi.org/10.1038/srep27867.
[26] Zhu, Liang, Chen, Lu, Zhu, Liangqing, Qi, Zhen, Chen, Xiren, Guo, Shaoling, He, Li, Shao, Jun. Above-Hg1-x Cd-x Te-bandgap photoluminescence and interfacial channels in Hg1-x Cd-x Te-CdTe heterostructure. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS[J]. 2016, 第 5 作者253(2): 377-383, https://www.webofscience.com/wos/woscc/full-record/WOS:000370022300027.
[27] Zhu, Liangqing, Shao, Jun, Chen, Xiren, Li, Yanqiu, Zhu, Liang, Qi, Zhen, Lin, Tie, Bai, Wei, Tang, Xiaodong, Chu, Junhao. Photoinduced magnetization effect in a p-type Hg1-xMnxTe single crystal investigated by infrared photoluminescence. PHYSICAL REVIEW B[J]. 2016, 第 3 作者94(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000385241300003.
[28] Chen XiRen, Song YuXin, Zhu LiangQing, Qi Zhen, Zhu Liang, Zha FangXing, Guo ShaoLing, Wang ShuMin, Shao Jun. Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance. CHINESE PHYSICS LETTERS[J]. 2015, 第 1 作者32(6): http://lib.cqvip.com/Qikan/Article/Detail?id=665068916.
[29] Chen, Xiren, Jung, Jinwook, Qi, Zhen, Zhu, Liangqing, Park, Sehun, Zhu, Liang, Yoon, Euijoon, Shao, Jun. Infrared photoreflectance investigation of resonant levels and band edge structure in InSb. OPTICS LETTERS[J]. 2015, 第 1 作者40(22): 5295-5298, 
[30] Zhu, Liangqing, Shao, Jun, Zhu, Liang, Chen, Xiren, Qi, Zhen, Lin, Tie, Bai, Wei, Tang, Xiaodong, Chu, Junhao. Influence of local magnetization on acceptor-bound complex state in Hg1-xMnxTe single crystals. JOURNAL OF APPLIED PHYSICS[J]. 2015, 第 4 作者118(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000358928000074.
[31] Shao, Jun, Qi, Zhen, Zhao, H, Zhu, Liang, Song, Yuxin, Chen, Xiren, Zha, F X, Guo, Shaoling, Wang, S M. Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells. JOURNAL OF APPLIED PHYSICS[J]. 2015, 第 6 作者118(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000364410300043.
[32] Chen, Xiren, Zhou, Yi, Zhu, Liang, Qi, Zhen, Xu, Qingqing, Xu, Zhicheng, Guo, Shaoling, Chen, Jianxin, He, Li, Shao, Jun. Evolution of interfacial properties with annealing in InAs/GaSb superlattice probed by infrared photoluminescence. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2014, 第 1 作者53(8): 082201, https://www.webofscience.com/wos/woscc/full-record/WOS:000341479100008.
[33] Chen, Xiren, Song, Yuxin, Zhu, Liang, Wang, S M, Lu, Wei, Guo, Shaoling, Shao, Jun. Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence. JOURNAL OF APPLIED PHYSICS[J]. 2013, 第 1 作者113(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000318251400011.

   

（ 1 ） InAsSb纳米线电子结构与载流子复合特性的红外调制光谱研究, 主持, 国家级, 2017-01--2019-12
（ 2 ） GaSb基稀Bi半导体带边精细结构红外调制光谱研究, 主持, 省级, 2016-07--2019-06
（ 3 ） 应变调控锗量子点电子能带结构的红外调制光谱研究, 主持, 省级, 2018-06--2021-05
（ 4 ） InGaAs/GaAsBi量子阱能带及电子跃迁调控的光调制反射研究, 主持, 研究所（学校）, 2016-01--2017-12