General

Xie, Xiuhua

Affiliations: State Key Laboratory of Luminescence and Applications,

                 Changchun Institute of Optics, Fine Mechanics and Physics, 

                 Chinese Academy of Sciences, 

E-mail:       xiexh@ciomp.ac.cn

Address:     No.3888 Dong Nanhu Road,Changchun,Jilin,China 130033

Research Areas

Wide-bandgap semiconductor,Molecular Beam Epitaxy,P-type doping,Optoelectronics

Education

  • Sep. 2009 - Jul. 2014   Ph.D. in Condensed Matter Physics, University of
                                      Chinese Academy of Sciences, the People’s Republic of
                                      China, Thesis advisor: Prof. SHEN, DEZHEN
  • Sep. 2005 - Jul. 2009   B.Sc. in Physics, Northeast Normal University, the
                                      People’s Republic of China

Experience

  • Sep. 2018 - present      Associate Professor, State Key Laboratory of
                                       Luminescence and Applications, Changchun Institute of
                                       Optics, Fine Mechanics and Physics, Chinese Academy
                                       of Sciences, the People’s Republic of China
  • Jul. 2014 - Aug. 2018   Assistant Professor, State Key Laboratory of
                                       Luminescence and Applications, Changchun Institute of
                                       Optics, Fine Mechanics and Physics, Chinese Academy
                                       of Sciences, the People’s Republic of China

Publications

  1. Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Shuangpeng Wang; Dezhen Shen, Controlled compensation via non-equilibrium electrons in ZnO, Scientific Reports, 2018.11.19, 8
  2. Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Dezhen Shen, Reinventing a p-type doping process for stable ZnO light emitting devices, Journal of Physics D-Applied Physics, 2018.5.8, 51(22)
  3. Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Dezhen Shen, Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core, Journal of Luminescence, 2018.2.14, 198: 178~182
  4. Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Dezhen Shen, Eradicated unintentional incorporated donor-type impurities of ZnO, AIP Advances, 2018.3.20, 8(3)
  5. Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Dezhen Shen, Zn vacancies creation via (2 x 2) surface reconstruction, Journal of Physics D-Applied Physics, 2017.7.19, 50(32)
  6. Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Shuangpeng Wang; Dezhen Shen, Conduction band discontinuity and carrier multiplication at the MgxZn1-xO/MgyZn1-yO interface, RSC Advances, 2016.3.30, 6(41): 34955~34958
  7. Xiuhua Xie; Zhenzhong Zhang(*); Binghui Li; Shuangpeng Wang; Dezhen Shen, Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO, Optics Express, 2015.12.8, 23(25): 32329~32336
  8. Xiuhua Xie; Zhenzhong Zhang; Binghui Li; Shuangpeng Wang; Mingming Jiang; Chongxin Shan; Dongxu Zhao; Hongyu Chen; Dezhen Shen, Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping, Optics Express, 2014.1.2, 22(1): 246~253
  9. X. H. Xie; Z. Z. Zhang; B. H. Li; S. P. Wang; M. M. Jiang; C. X. Shan; D. X. Zhao; H. Y. Chen; D. Z. Shen, Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer, Applied Physics Letters, 2013.6.12, 102(23)
  10. X. H. Xie; Z. Z. Zhang; C. X. Shan; H. Y. Chen; D. Z. Shen, Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction, Applied Physics Letters, 2012.8.20, 101(8)