基本信息
王国伟  男  硕导  中国科学院半导体研究所
电子邮件: wangguowei@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
红外探测,红外焦平面,分子束外延

教育背景

2007-09--2012-07   中国科学院半导体研究所   工学博士
2003-09--2007-07   山东大学   理学学士

工作经历

   
工作简历
2022-10~现在, 中国科学院半导体研究所, 研究员
2012-07~现在, 中国科学院半导体研究所, 副研究员

专利与奖励

   
专利成果
( 1 ) 双色异质结光电晶体管及其制备方法, 2023, 第 4 作者, 专利号: CN114335232B

( 2 ) 一种短波双色红外探测器及其制备方法, 2023, 第 4 作者, 专利号: CN114122185B

( 3 ) 利用半导体激光器实现全息光刻的装置, 发明专利, 2022, 第 5 作者, 专利号: CN115373229A

( 4 ) 周期渐变超晶格宽光谱红外探测器及其制备方法, 发明专利, 2022, 第 4 作者, 专利号: CN114582996A

( 5 ) 近-远红外宽光谱超晶格探测器, 发明专利, 2022, 第 4 作者, 专利号: CN114464632A

( 6 ) 近-远红外宽光谱超晶格探测器, 发明专利, 2022, 第 4 作者, 专利号: CN114464632A

( 7 ) 双色异质结光电晶体管及其制备方法, 发明专利, 2022, 第 4 作者, 专利号: CN114335232A

( 8 ) 一种短波双色红外探测器及其制备方法, 发明专利, 2022, 第 4 作者, 专利号: CN114122185A

( 9 ) 红外探测器及其制备方法, 发明专利, 2022, 第 4 作者, 专利号: CN113972296A

( 10 ) 一种红外探测器及其制备方法, 专利授权, 2021, 第 4 作者, 专利号: CN113488558A

( 11 ) 在GaSb衬底上生长InAs层的生长速度测定方法, 发明专利, 2021, 第 5 作者, 专利号: CN113358677A

( 12 ) 中波超晶格红外探测器, 发明专利, 2021, 第 1 作者, 专利号: CN113327992A

( 13 ) 双色探测器及其制备方法, 发明专利, 2021, 第 1 作者, 专利号: CN113327991A

( 14 ) 焦平面红外探测器芯片、探测器和制备方法, 发明专利, 2021, 第 4 作者, 专利号: CN113130676A

( 15 ) 利用钝化层负电化抑制侧壁漏电流的探测器的制备方法, 发明专利, 2021, 第 7 作者, 专利号: CN113113511A

( 16 ) 互补势垒超晶格长波红外探测器, 发明专利, 2021, 第 6 作者, 专利号: CN113035992A

( 17 ) GaSb焦平面红外探测器的制备方法及GaSb焦平面红外探测器, 发明专利, 2021, 第 4 作者, 专利号: CN113013289A

( 18 ) 基于锑化物的可见光-中红外探测器及其制备方法, 2019, 第 4 作者, 专利号: CN108899379B

( 19 ) 红外探测器光陷阱结构的制备方法, 专利授权, 2019, 第 4 作者, 专利号: CN109802004A

( 20 ) 可见光拓展的中波红外探测器单元器件及其制备方法, 发明专利, 2019, 第 6 作者, 专利号: CN109524499A

( 21 ) 基于锑化物的可见光-中红外探测器及其制备方法, 专利授权, 2018, 第 4 作者, 专利号: CN108899379A

( 22 ) 一种分子束外延生长长波红外超晶格界面的优化方法, 专利授权, 2018, 第 3 作者, 专利号: CN108648987A

( 23 ) 基于AlInAsSb体材料作倍增区的雪崩光电二极管及其制备方法, 发明专利, 2017, 第 4 作者, 专利号: CN107170847A

( 24 ) 一种雪崩光电二极管及其制作方法, 发明专利, 2017, 第 2 作者, 专利号: CN104465853B

( 25 ) 铟砷锑和铟镓砷锑双波段红外探测器及制备方法, 发明专利, 2017, 第 3 作者, 专利号: CN106298993A

( 26 ) InAs/GaSb超晶格光子晶体红外探测器及其制备方法, 发明专利, 2016, 第 3 作者, 专利号: CN106024931A

( 27 ) 一种双通道宽光谱探测器及其制备方法, 发明专利, 2016, 第 3 作者, 专利号: CN105957918A

( 28 ) 单势垒型InGaAsSb红外探测器, 发明专利, 2016, 第 2 作者, 专利号: CN105932092A

( 29 ) 一种高电阻温度系数氧化钒薄膜的制备方法, 发明专利, 2015, 第 2 作者, 专利号: CN104611670A

( 30 ) 一种雪崩光电二极管及其制作方法, 发明专利, 2015, 第 2 作者, 专利号: CN104465853A

( 31 ) 一种半导体光电器件的表面钝化方法, 发明专利, 2015, 第 2 作者, 专利号: CN104409525A

( 32 ) InAs/GaSb超晶格红外光电探测器及其制备方法, 发明专利, 2014, 第 5 作者, 专利号: CN103887360A

( 33 ) 带间级联激光器及其制备方法, 发明专利, 2014, 第 4 作者, 专利号: CN103579904A

( 34 ) InSb/GaSb量子点结构器件及生长方法, 发明专利, 2013, 第 4 作者, 专利号: CN103441181A

( 35 ) 双波长锑化物应变量子阱半导体激光器及其制备方法, 发明专利, 2013, 第 3 作者, 专利号: CN103078252A

( 36 ) “W”型锑化物二类量子阱的外延生长方法, 发明专利, 2011, 第 3 作者, 专利号: CN102157903A

( 37 ) HPT结构的InAs/GaSb超晶格红外光电探测器, 发明专利, 2010, 第 2 作者, 专利号: CN101814545A

( 38 ) 一种InAs/GaSb超晶格红外光电探测器及其制作方法, 发明专利, 2010, 第 1 作者, 专利号: CN101777601A

出版信息

   
发表论文
[1] 温涛, 胡雨农, 李景峰, 赵成城, 王国伟, 刘铭. InAs/GaSbⅡ类超晶格双色红外焦平面器件的干法刻蚀与湿法腐蚀制备对比研究. 红外[J]. 2023, 第 5 作者44(4): 1-6, http://lib.cqvip.com/Qikan/Article/Detail?id=7109462222.
[2] Jiang, Junkai, Chang, Faran, Zhou, Wenguang, Li, Nong, Chen, Weiqiang, Jiang, Dongwei, Hao, Hongyue, Wang, Guowei, Wu, Donghai, Xu, Yingqiang, Niu, ZhiChuan. High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices. CHINESE PHYSICS B[J]. 2023, 第 8 作者  通讯作者  32(3): 589-593, http://dx.doi.org/10.1088/1674-1056/acaa2e.
[3] Zhou, Wenguang, Liang, Yan, Li, Nong, Chang, Faran, Jiang, Junkai, Chen, Weiqiang, Jiang, Dongwei, Hao, Hongyue, Wu, Donghai, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan. High responsivity short-wavelength dual-band photodetector based on AlInAsSb digital alloy. INFRARED PHYSICS & TECHNOLOGY[J]. 2023, 第 10 作者  通讯作者  133: http://dx.doi.org/10.1016/j.infrared.2023.104763.
[4] Zhou Wenguang, Jiang Dongwei, Shang Xiangjun, Wu Donghai, Chang Faran, Jiang Junkai, Li Nong, Lin Fangqi, Chen Weiqiang, Hao Hongyue, Liu Xuelu, Tan Pingheng, Wang Guowei, Xu Yingqiang, Niu Zhichuan. On the origin of carrier localization in AlInAsSb digital alloy. CHINESE PHYSICS. B[J]. 2023, 第 13 作者  通讯作者  32(8): http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=7538895&detailType=1.
[5] 李农, 王国伟, 牛智川. Trap-assisted tunneling current and quantum efficiency loss in InGaAsSb short wavelength infrared photo detectors. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2022, 第 2 作者
[6] Cui, SuNing, Chen, WeiQiang, Jiang, DongWei, Wu, DongHai, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. Dark current simulation and analysis for InAs/GaSb long wavelength infrared barrier detectors. INFRARED PHYSICS & TECHNOLOGY[J]. 2022, 第 5 作者121: http://dx.doi.org/10.1016/j.infrared.2021.104006.
[7] Shen, Guiying, Zhao, Youwen, Liu, Jingming, Yang, Jun, Xie, Hui, He, Jianjun, Wang, Guowei. Oxidation related particles on GaSb (100) substrate surfaces. JOURNAL OF CRYSTAL GROWTH[J]. 2022, 第 7 作者581: http://dx.doi.org/10.1016/j.jcrysgro.2021.126499.
[8] 林芳祁, 李农, 周文广, 蒋俊锴, 常发冉, 李勇, 崔素宁, 陈伟强, 蒋洞微, 郝宏玥, 王国伟, 徐应强, 牛智川. Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy. 中国物理B[J]. 2022, 第 11 作者  通讯作者  31: 098504, https://iopscience.iop.org/article/10.1088/1674-1056/ac615d.
[9] Xu, XueYue, Jiang, JunKai, Chen, WeiQiang, Cui, SuNing, Zhou, WenGuang, Li, Nong, Chang, FaRan, Wang, GuoWei, Xu, YingQiang, Jiang, DongWei, Wu, DongHai, Hao, HongYue, Niu, ZhiChuan. Wet etching and passivation of GaSb-based very long wavelength infrared detectors. CHINESE PHYSICS B[J]. 2022, 第 8 作者31(6): 132-136, http://dx.doi.org/10.1088/1674-1056/ac4cc1.
[10] Wei GuoShuai, Hao RuiTing, Guo Jie, Ma XiaoLe, Li XiaoMing, Li Yong, Chang FaRan, Zhuang Yu, Wang GuoWei, Xu YingQiang, Niu ZhiChuan, Wang Yao. High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy. JOURNALOFINFRAREDANDMILLIMETERWAVES[J]. 2021, 第 9 作者  通讯作者  40(5): 595-604, http://dx.doi.org/10.11972/j.issn.1001-9014.2021.05.005.
[11] Ma, Xiaole, Guo, Jie, Hao, Ruiting, Wei, Guoshuai, Chang, Faran, Li, Yong, Li, Xiaoming, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan. Growth and photo-electronic characteristics of short/mid wave dual-band infrared detectors based on GaSb bulk and InAs/GaSb superlattices. OPTICAL MATERIALS EXPRESS[J]. 2021, 第 9 作者11(2): 585-591, https://www.webofscience.com/wos/woscc/full-record/WOS:000615987600015.
[12] Jiang, JunKai, Li, Yong, Chang, FaRan, Cui, SuNing, Chen, WeiQiang, Jiang, DongWei, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan, Che, Renchao, Zhang, Chuanjie, Huang, Li. MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice. JOURNAL OF CRYSTAL GROWTH[J]. 2021, 第 7 作者  通讯作者  564: http://dx.doi.org/10.1016/j.jcrysgro.2021.126109.
[13] Chang FaRan, Jiang Zhi, Wang GuoWei, Li Yong, Cui SuNing, Jiang DongWei, Xu YingQing, Niu ZhiChuan. Progress of long wavelength infrared focal plane arrays based on antimonide compounds superlattice. SCIENTIA SINICA-PHYSICA MECHANICA & ASTRONOMICA[J]. 2021, 第 3 作者  通讯作者  51(2): 
[14] Sun, Ju, Li, Nong, Jia, QingXuan, Zhang, Xuan, Jiang, DongWei, Wang, GuoWei, Niu, ZhiChuan. High-Performance Anodic Vulcanization-Pretreated Gated P+-pi-M-N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector. NANOSCALE RESEARCH LETTERS[J]. 2021, 第 6 作者16(1): http://dx.doi.org/10.1186/s11671-021-03550-x.
[15] 常发冉, 蒋志, 王国伟, 李勇, 崔素宁, 蒋洞微, 徐应强, 牛智川. 锑化物超晶格长波红外焦平面探测器研究进展. 中国科学:物理学、力学、天文学[J]. 2021, 第 3 作者51(2): 28-45, https://www.sciengine.com/doi/10.1360/SSPMA-2020-0307.
[16] Li, Yong, Li, XiaoMing, Hao, RuiTing, Guo, Jie, Zhuang, Yu, Cui, SuNing, Wei, GuoShuai, Ma, XiaoLe, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan, Wang, Yao. Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*. CHINESE PHYSICS B[J]. 2021, 第 9 作者  通讯作者  30(2): 573-577, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=6931916&detailType=1.
[17] Ma XiaoLe, Guo Jie, Hao RuiTing, Wei GuoShuai, Wang GuoWei, Xu YingQiang, Niu ZhiChuan. Mid-/Short-Wave dual-band infrared detector based on InAs/GaSb superlattice/GaSb bulk materials. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2021, 第 5 作者40(5): 569-575, 
[18] Wei, Guoshuai, Hao, Ruiting, Li, Xiaoming, Wang, Yunpeng, Fang, Shuiliu, Guo, Jie, Ma, Xiaole, Ren, Yang, Li, Junbin, Kong, JinCheng, Wang, Guowei, Xu, Yingqiang, Wu, Donghai, Niu, Zhichuan. Performance and electron radiation damage of InAs/GaSb long-wave infrared detectors based on P pi MN design. JOURNAL OF APPLIED PHYSICS[J]. 2021, 第 11 作者130(7): 
[19] Li, Nong, Chen, Weiqiang, Zheng, Danong, Sun, Ju, Jia, Qingxuan, Jiang, Junkai, Wang, Guowei, Jiang, Dongwei, Xu, Yingqiang, Niu, Zhichuan. The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection. INFRARED PHYSICS & TECHNOLOGY[J]. 2020, 第 7 作者111: http://dx.doi.org/10.1016/j.infrared.2020.103461.
[20] Zhang, Xuan, Jia, QingXuan, Sun, Ju, Jiang, DongWei, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. High-performance midwavelength infrared detectors based on InAsSb nBn design. CHINESE PHYSICS B[J]. 2020, 第 5 作者  通讯作者  29(6): 549-552, http://lib.cqvip.com/Qikan/Article/Detail?id=7102153237.
[21] Cui, SuNing, Jiang, DongWei, Sun, Ju, Jia, QingXuan, Li, Nong, Zhang, Xuan, Li, Yong, Chang, FaRan, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. Investigation of active-region doping on InAs/GaSb long wave infrared detectors. CHINESE PHYSICS B[J]. 2020, 第 9 作者  通讯作者  29(4): 516-522, http://lib.cqvip.com/Qikan/Article/Detail?id=7101531622.
[22] Li, Yong, Li, Xiaoming, Hao, Ruiting, Guo, Jie, Wang, Yunpeng, Aierken, Abuduwayiti, Zhuang, Yu, Chang, Faran, Cui, Suning, Gu, Kang, Wei, Guoshuai, Ma, Xiaole, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan. MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers. JOURNAL OF CRYSTAL GROWTH[J]. 2020, 第 13 作者  通讯作者  542: http://dx.doi.org/10.1016/j.jcrysgro.2020.125688.
[23] 蒋洞微, 徐应强, 王国伟, 牛智川. 基于锑化物二类超晶格的多色红外探测器研究进展. 人工晶体学报[J]. 2020, 第 3 作者49(12): 2211-2220, http://lib.cqvip.com/Qikan/Article/Detail?id=7103807709.
[24] 齐通通, 郭杰, 王国伟, 郝瑞亭, 徐应强, 常发然. Sb浸润界面对InAs/InAsSb超晶格晶体结构和探测器性能的影响. 材料导报[J]. 2020, 第 3 作者34(S01): 86-89, http://lib.cqvip.com/Qikan/Article/Detail?id=7102066319.
[25] Xu Yingqiang. MBE Growth of High Quality InSb Thin Films on GaAs Substrates with AlInSb/GaSb as Compound Buffer Layers. CHINESE PHYSICS B. 2020, 
[26] Yong Li, Xiaoming Li, Ruiting Hao, Jie Guo, Yunpeng Wang, Abuduwayiti Aierken, Yu Zhuang, Faran Chang, Kang Gu, Guoshuai Wei, Xiaole Ma, Guowei Wang, Yingqiang Xu, Zhichuan Niu. MBE growth of high quality AlInSb/GaSb compound buffer layers on GaAs substrates. OPTICAL AND QUANTUM ELECTRONICS[J]. 2020, 第 12 作者  通讯作者  52(3): 138, https://www.webofscience.com/wos/woscc/full-record/WOS:000517159800002.
[27] Jiang, Zhi, Sun, YaoYao, Guo, ChunYan, Lv, YueXi, Hao, HongYue, Jiang, DongWei, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector. CHINESE PHYSICS B[J]. 2019, 第 7 作者  通讯作者  28(3): 
[28] Guo, Chunyan, Sun, Yaoyao, Jia, Qingxuan, Jiang, Zhi, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Wang, Tao, Tian, Jinshou, Wu, Zhaoxin, Niu, Zhichuan. Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide. INFRARED PHYSICS & TECHNOLOGY[J]. 2019, 第 6 作者96: 1-6, http://dx.doi.org/10.1016/j.infrared.2018.10.037.
[29] Nong Li, Ju Sun, Qingxuan Jia, Yifeng Song, Dongwei Jiang, Guowei Wang, Yingqiang Xu, Zhichuan Niu. High performance nBn detectors based on InGaAsSb bulk materials for short wavelength infrared detection. AIP ADVANCES[J]. 2019, 第 6 作者  通讯作者  9(10): https://doaj.org/article/63b313fa56c34f339a947f103ec14e2f.
[30] Chang Faran, Hao Ruiting, Qi Tongtong, Zhao Qichen, Liu Xinxing, Li Yong, Gu Kang, Guo Jie, Wang Guowei, Xu Yingqiang, Niu Zhichuan. High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy. 中国物理B:英文版[J]. 2019, 第 9 作者  通讯作者  449-453, http://lib.cqvip.com/Qikan/Article/Detail?id=90718776504849574850485451.
[31] Guo, Chunyan, Jiang, Zhi, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Wang, Tao, Tian, Jinshou, Wu, Zhaoxin, Niu, Zhichuan. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices. OPTICAL AND QUANTUM ELECTRONICS[J]. 2019, 第 4 作者51(3): http://ir.opt.ac.cn/handle/181661/31209.
[32] Qi, TongTong, Guo, Jie, Hao, RuiTing, Liu, Yu, Chang, FaRan, Jiang, Zhi, He, XiaoWu, Jiang, DongWei, Wang, GuoWei, Xu, YingQiang, Niu, ZhiChuan. Growth and characterization of type-II superlattice photodiodes with cutoff wavelength of 12 mu m on 4-in. wafer. OPTICAL AND QUANTUM ELECTRONICS[J]. 2019, 第 9 作者51(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000482439200001.
[33] Tan, BiSong, Zhang, ChuanJie, Zhou, WenHong, Yang, XiaoJie, Wang, GuoWei, Li, YunTao, Ding, YanYan, Zhang, Zhou, Lei, HuaWei, Liu, WeiHua, Du, Yu, Zhang, LiFang, Liu, Bin, Wang, LiBao, Huang, Li. The 640 x 512 LWIR type-II superlattice detectors operating at 110 K. INFRARED PHYSICS & TECHNOLOGY[J]. 2018, 第 5 作者89: 168-173, https://www.webofscience.com/wos/woscc/full-record/WOS:000428100900023.
[34] Guo, Chunyan, Sun, Yaoyao, Jia, Zhe, Jiang, Zhi, Lv, Yuexi, Hao, Hongyue, Han, Xi, Dong, Yinan, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Wang, Tao, Tian, Jinshou, Wu, Zhaoxin, Niu, Zhichuan. Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-II superlattices (T2SL). INFRARED PHYSICS & TECHNOLOGY[J]. 2018, 第 10 作者89: 147-153, http://ir.opt.ac.cn/handle/181661/30808.
[35] Han, Xi, Jiang, Dongwei, Wang, Guowei, Hao, Hongyue, Sun, Yaoyao, Jiang, Zhi, Lv, Yuexi, Guo, Chunyan, Xu, Yingqiang, Niu, Zhichuan. Small-pixel long wavelength infrared focal plane arrays based on InAs/GaSb Type-II superlattice. INFRARED PHYSICS & TECHNOLOGY[J]. 2018, 第 3 作者89: 35-40, http://dx.doi.org/10.1016/j.infrared.2017.12.004.
[36] Lyu, Yuexi, Han, Xi, Sun, Yaoyao, Jiang, Zhi, Guo, Chunyan, Xiang, Wei, Dong, Yinan, Cui, Jie, Yao, Yuan, Jiang, Dongwei, Wang, Guowei, Xu, Yingqiang, Niu, Zhichuan. Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes. JOURNAL OF CRYSTAL GROWTH[J]. 2018, 第 11 作者482: 70-74, http://dx.doi.org/10.1016/j.jcrysgro.2017.10.035.
[37] Hao, Hongyue, Wang, Guowei, Han, Xi, Jiang, Dongwei, Sun, Yaoyao, Guo, Chunyan, Xiang, Wei, Xu, Yingqiang, Niu, Zhichuan. Extended-wavelength InGaAsSb infrared unipolar barrier detectors. AIP ADVANCES[J]. 2018, 第 2 作者8(9): https://doaj.org/article/bf85970b59f74b3c80c3fdbddff8e58e.
[38] Chunyan Guo, Yaoyao Sun, Zhe Jia, Zhi Jiang, Yuexi Lv, Hongyue Hao, Xi Han, Yinan Dong, Dongwei Jiang, Guowei Wang, Yingqiang Xu, Tao Wang, Jinshou Tian, Zhaoxin Wu, Zhichuan Niu. Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL). INFRARED PHYSICS AND TECHNOLOGY. 2018, 第 10 作者89: 147-153, http://dx.doi.org/10.1016/j.infrared.2017.12.020.
[39] Jiang, Dongwei, Han, Xi, Hao, Hongyue, Sun, Yaoyao, Jiang, Zhi, Lv, Yuexi, Guo, Chunyan, Wang, Guowei, Xu, Yingqiang, Yu, Yang, Niu, Zhichuan. Significantly extended cutoff wavelength of very long-wave infrared detectors based on InAs/GaSb/InSb/GaSb superlattices. APPLIED PHYSICS LETTERS[J]. 2017, 第 8 作者111(16): 
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[42] Hao Hongyue, Xiang Wei, Wang Guowei, Xu Yingqiang, Han Xi, Sun Yaoyao, Jiang Dongwei, Zhang Yu, Liao Yongping, Wei Sihang, Niu Zhichuan. Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array. CHINESE PHYSICS. B[J]. 2017, 第 3 作者26(4): 047303-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5967261&detailType=1.
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[60] Wang Guowei, Xu Yingqiang, Niu Zhichuan, Liao Yongping, Zhang Yu, Xing Junliang, Wei Sihang, Hao Hongyue. High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells. JOURNAL OF SEMICONDUCTORS[J]. 2015, 第 1 作者36(5): 054007-01, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5456446&detailType=1.
[61] Jiang, Dongwei, Guo, Fengyun, Xiang, Wei, Hao, Yuehong, Wang, Guowei, Xu, Yingqiang, Yu, Qingjiang, Niu, Zhichuan, Zhao, Liancheng, Guina, M, Gong, H, Niu, Z, Lu, J. Very long-wavelength (similar to 20 mu m) InAs/GaSb superlattice infrared detector with double InSb-like interfaces. INTERNATIONAL SYMPOSIUM ON OPTOELECTRONIC TECHNOLOGY AND APPLICATION 2014: INFRARED TECHNOLOGY AND APPLICATIONS. 2014, 第 5 作者9300: 
[62] Xing Junliang, Zhang Yu, Liao Yongping, Wang Juan, Xiang Wei, Xu Yingqiang, Wang Guowei, Ren Zhengwei, Niu Zhichuan. Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density. CHINESE PHYSICS LETTERS[J]. 2014, 第 7 作者31(5): 54204-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5163529&detailType=1.
[63] Xing JunLiang, Zhang Yu, Xu YingQiang, Wang GuoWei, Wang Juan, Xiang Wei, Ni HaiQiao, Ren ZhengWei, He ZhenHong, Niu ZhiChuan. High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy. CHINESE PHYSICS B[J]. 2014, 第 4 作者23(1): http://ir.semi.ac.cn/handle/172111/26445.
[64] Wang, Juan, Xing, JunLiang, Xiang, Wei, Wang, GuoWei, Xu, YingQiang, Ren, ZhengWei, Niu, ZhiChuan. Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy. APPLIED PHYSICS LETTERS[J]. 2014, 第 4 作者104(5): http://ir.semi.ac.cn/handle/172111/26013.
[65] Hao Hongyue, Xiang Wei, Wang Guowei, Jiang Dongwei, Xu Yingqiang, Ren Zhengwei, He Zhenhong, Niu Zhichuan, Guina M, Gong H, Niu Z, Lu J. Sulfurizing Method for Passivation Used in InAs/GaSb Type-II Superlattice Photodetectors. INTERNATIONAL SYMPOSIUM ON OPTOELECTRONIC TECHNOLOGY AND APPLICATION 2014: INFRARED TECHNOLOGY AND APPLICATIONS. 2014, 第 3 作者9300: 
[66] Xing Junliang, Zhang Yu, Xu Yingqiang, Wang Guowei, Wang Juan, Xiang Wei, Ni Haiqiao, Ren Zhengwei, He Zhenhong, Niu Zhichuan. High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy. CHINESE PHYSICS. B[J]. 2014, 第 4 作者23(1): 017805-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5044609&detailType=1.
[67] Xing JunLiang, Zhang Yu, Liao YongPing, Wang Juan, Xiang Wei, Xu YingQiang, Wang GuoWei, Ren ZhengWei, Niu ZhiChuan. Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density. CHINESE PHYSICS LETTERS[J]. 2014, 第 7 作者31(5): http://ir.semi.ac.cn/handle/172111/26316.
[68] Yu, Ying, Shang, Xiang-Jun, Li, Mi-Feng, Zha, Guo-Wei, Xu, Jian-Xing, Wang, Li-Juan, Wang, Guo-Wei, Ni, Hai-Qiao, Dou, Xiuming, Sun, Baoquan, Niu, Zhi-Chuan. Single InAs quantum dot coupled to different "environments" in one wafer for quantum. APPLIED PHYSICS LETTERS[J]. 2013, 第 7 作者102(20): 201103, http://ir.semi.ac.cn/handle/172111/24575.
[69] Yu, Ying, Shang, XiangJun, Li, MiFeng, Zha, GuoWei, Xu, JianXing, Wang, LiJuan, Wang, GuoWei, Ni, HaiQiao, Dou, Xiuming, Sun, Baoquan, Niu, ZhiChuan. Single InAs quantum dot coupled to different "environments" in one wafer for quantum photonics. APPLIED PHYSICS LETTERS[J]. 2013, 第 7 作者102(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000320619300003.
[70] Guo, Jie, Wang, Guowei, Lin, Xu, Hao, Ruiting. Short to long-wave IR detectors based on InAs/GaSb superlattices in multi-color application. PROCEEDINGS OF THE SPIE[J]. 2013, 第 2 作者8907: 89070r, http://ir.semi.ac.cn/handle/172111/24887.
[71] 王国伟, 牛智川, 徐应强, 王娟, 邢军亮. 长波段InAs/GaSb超品格材料的分子束外延研究. 航空兵器[J]. 2013, 第 1 作者33-37, http://lib.cqvip.com/Qikan/Article/Detail?id=45722438.
[72] Wang, Juan, Wang, GuoWei, Xu, YingQiang, Xing, JunLiang, Xiang, Wei, Tang, Bao, Zhu, Yan, Ren, ZhengWei, He, ZhenHong, Niu, ZhiChuan. Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure. JOURNAL OF APPLIED PHYSICS[J]. 2013, 第 2 作者114(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000321716000014.
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科研活动

   
科研项目
( 1 ) 锑化物超晶格的载流子寿命及其在红外探测器件中的应用研究, 负责人, 国家任务, 2014-01--2016-12
( 2 ) 中波段高工作温度锑化物超晶格红外探测器研究, 负责人, 境内委托项目, 2014-10--2016-09
( 3 ) 纳米异质结材料与器件微结构表征及性能评估, 负责人, 国家任务, 2018-05--2023-04
( 4 ) 锑化物红外探测, 负责人, 中国科学院计划, 2017-05--2020-05
( 5 ) XXX甚长波红外近探测技术, 负责人, 境内委托项目, 2017-01--2019-06
( 6 ) XXX甚长波红外探测芯片, 负责人, 国家任务, 2019-06--2023-06
( 7 ) XXXX双色探测器研制, 参与, 国家任务, 2022-12--2025-12

指导学生

已指导学生

林芳祁  硕士研究生  080903-微电子学与固体电子学