基本信息
王国伟  男  硕导  中国科学院半导体研究所
电子邮件: wangguowei@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
红外探测,红外焦平面,分子束外延

教育背景

2007-09--2012-07   中国科学院半导体研究所   工学博士
2003-09--2007-07   山东大学   理学学士

工作经历

   
工作简历
2012-07~现在, 中国科学院半导体研究所, 副研究员
2007-09~2012-07,中国科学院半导体研究所, 工学博士
2003-09~2007-07,山东大学, 理学学士

出版信息

   
发表论文
(1) 锑化物超晶格长波红外焦平面探测器研究进展, Progress of long wavelength infrared focal plane arrays based on antimonide compounds superlattice, 中国科学: 物理学力 学天文, 2021, 通讯作者
(2) Growth and photo-electronic characteristics of short/mid wave dual-band infrared detectors based on GaSb bulk and InAs/GaSb superlattices, OPTICAL MATERIALS EXPRESS, 2021, 第 9 作者
(3) Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers, Chinese Physics B, 2021, 第 9 作者
(4) High-performance midwavelength infrared detectors based on InAsSb nBn design., Chinese Physics B, 2020, 通讯作者
(5) Investigation of active-region doping on InAs/GaSb long wave infrared detectors., Chinese Physics B, 2020, 通讯作者
(6) MBE Growth of High Quality AlInSb/GaSb Compound Buffer Layers on GaAs Substrates, Optical and Quantum Electronics, 2020, 通讯作者
(7) MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers, Journal of Crystal Growth, 2020, 通讯作者
(8) MBE Growth of High Quality InSb Thin Films on GaAs Substrates with AlInSb/GaSb as Compound Buffer Layers., Chinese Physics B, 2020, 通讯作者
(9) Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide, Infrared Physics & Technology, 2019, 第 6 作者
(10) High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector, Chinese Physics B, 2019, 第 7 作者
(11) Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes, Journal of Crystal Growth, 2018, 第 10 作者
(12) Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL), Infrared Physics & Technology, 2018, 第 9 作者
(13) Small-pixel long wavelength infrared focal plane arrays based on InAs/GaSb Type-II superlattice, Infrared Physics & Technology, 2018, 第 3 作者
(14) Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice, Chinese Physics B, 2017, 第 6 作者
(15) Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640× 512 focal plane array, Chinese Physics B, 2017, 第 3 作者
(16) Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 μ m, Applied Physics Letters, 2016, 第 7 作者
(17) Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well, Scientific Reports, 2016, 第 3 作者
(18) Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy, Applied Physics Letters, 2014, 第 4 作者
(19) Complete fabrication study of InAs/GaSb superlattices for long-wavelength infrared detection, Journal of Physics D: Applied Physics, 2012, 第 1 作者

科研活动

   
科研项目
( 1 ) 锑化物超晶格的载流子寿命及其在红外探测器件中的应用研究, 负责人, 国家任务, 2014-01--2016-12
( 2 ) 中波段高工作温度锑化物超晶格红外探测器研究, 负责人, 企业委托, 2014-10--2016-09
( 3 ) 纳米异质结材料与器件微结构表征及性能评估, 负责人, 国家任务, 2018-05--2023-04
( 4 ) 锑化物红外探测, 负责人, 中国科学院计划, 2017-05--2020-05
( 5 ) XXX甚长波红外近探测技术, 负责人, 企业委托, 2017-01--2019-06
( 6 ) XXX甚长波红外探测芯片, 负责人, 国家任务, 2019-06--2023-06