Semiconductor lasers, nanophotonics, Bragg reflection waveguide

2002-2005  PhD, Institute of Semiconductor, Chinese Academy of Sciences;
1999-2002  M.S, Chongqing University & Institute of Physics, CAS;
1995-1999  B.S,  Chongqing University

   

2010 -         CIOMP, CAS, Professor
2009 - 2010 University of Toronto, Canada, Posdoc
2005 - 2009 Nanyang Technological University, Singapore, Research Fellow

1. Hundred Talents Program Scholarship, Chinese Academy of Sciences (2010)
2. Talents of Innovation and Entrepreneurship, Jilin Province, China (2011)
3.Talents Development Foundation, Jilin Province, China (2011)
4. Outstanding Young Scientist Award, Person of the Year 2012, Selected by SCIENTIFIC CHINESE. (2013)

   

2014

[44]S.C.Tian, R.G.Wan, C.Z.Tong*, Y.Q. Ning, Li Qin, and Yun Liu, “Giant Kerr nonlinearity induced by tunneling in triple quantum dot molecules,” J. Optical Society of America B, acceptance.
[43] S.C.Tian, C.Z.Tong*, R.G.Wan, Y.Q. Ning, “Effects of spontaneously generated coherence on resonance fluorescence from triple quantum dot molecules,” J. Luminescence, Vol 153, pp.169–176, 2014.
[42] S.C.Tian, C.Z.Tong*, R.G.Wan, Y.Q. Ning, L.Qin, Liu Y., Wang L.J., Wang Z.B., Gao J.Y., “Phase control of light amplification in steady and transient process in an inverted-Y atomic system with spontaneously generated coherence,” Chin. Phys. B . Vol. 23, No. 4, 044205, 2014.
[41] S.C.Tian, C.Z.Tong*, C.L. Wang, L.J. Wang, H.Wu, E.B. Xing, Y.Q. Ning, L.J. Wang, “Spectral line narrowing via spontaneously generated coherence in quantum dot molecules,” Optics Communications, 312, pp.296-301, 2014. 

2013 

[40] Y. Yang, C. Z. Tong*, L.Wang, Y.G.Zeng, J.S.Cao, B.Wang, L.J.Wang, “Tapered Bragg reflection waveguide edge emitting lasers with near circular twin-beam emission,” Chin. Opt. Lett. 11(12), 12401, (2013). (Cover Story) 
[39] Zhang X., Ning Y.Q., Qin L., Tong C.Z., Liu Y., Wang L.J., “The improved output performance of a broad-area vertical-cavity surface-emitting laser with an optimized electrode diameter,” Chin. Phys. B . 2013, 22(6): 064209.
[38] H.Wu, L. Wang, Fengqi Liu, Hangyu Peng, Jun Zhang, Cunzhu Tong*, Yongqiang Ning, Lijun Wang, “High efficiency beam combination of 4.6-um quantum cascade lasers,” Chin. Opt. Lett. 11(9), 09140(2013).
[37] Lijie Wang, C.Z. Tong*, Y. G. Zeng, Y. Yang, H. Peng, S.C. Tian, H.Wu, L.J. Wang, “Bragg reflection waveguide twin-beam lasers,” Laser Phys., vol. 23, 105802, 2013.
[36] J. Zhang, Y.Q. Ning, Y.G. Zeng, J.W. Zhang, J.L. Zhang, X.H. Fu, C.Z. Tong, L.J. Wang, “Design and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks,” Laser Phys. Lett. vol.10, 045802, 2013. (SCI) 

2012
[35]C. Z. Tong, S.F. Yoon, L. J. Wang, Nanoscale Research Lett., vol.7, 520, 2012. (EI, SCI)
[34]S. C. Tian, C.L. Wang, C. Z. Tong, L. J. Wang, H. H.Wang, X. B. Yang, Z. H. Kang, J.Y. Gao, Opt. Express, vol. 20, Issue 21, pp. 23559-23569, 2012. (EI, SCI)
[33] W. Wang, Y. Q. Ning, J. L. Zhang, L. Qin, Y. G. Zeng, Y. Liu, C. Z. Tong, L. J. Wang, Laser Physics, vol. 22, no. 3, pp. 554–558, 2012. (SCI)
[32] Lijie Wang, Y. Yang, Y.G. Zeng, L.J. Wang, C.Z. Tong, X.N. Shan, H.X. Zhao, R. Wang, S.F. Yoon,  Appl. Phys. B 107, 809-812, 2012. (EI, SCI)
[31]Q. Cao, C. Z. Tong, S. F. Yoon, C. Y. Liu and C. Y. Ngo,  IEEE Trans. on Nanotech., vol. 11, no.2, pp.231-235, 2012. (EI)
[30] X. Zhang, Y.Q. Ning, Y.G. Zeng, J.L.Zhang, X.H.Fu, L. Qin, Y. Liu, C.Z.Tong, and L.J.Wang,IEEE J. Quantum Electron., vol.48, no.1, pp.42-48, 2012. (EI, SCI) 

2011
[29]. C. Z. Tong, B. Bijlani, L. J. Zhao, S. Alali, Q. Han and A.S. Helmy, “Mode selectivity in Bragg reflection waveguide lasers,” IEEE Photon. Technol. Lett., vol. 23, no.14, pp.1025-1027, 2011. (EI, SCI)
[28]. D. W. Xu, S. F. Yoon, Y. Ding, C. Z. Tong, W. J. Fan, and L. J. Zhao, “1.3-μm In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process,” IEEE Photon. Technol. Lett., vol.23, 91, 2011. (EI)
[27]. H. X. Zhao S. F. Yoon, C. Z. Tong, C. Y. Liu, R. Wang and Q. Cao, “Thermal effects and small signal modulation of 1.3-μm InAs/GaAs self-assembled quantum-dot lasers,” Nanoscale Research Lett., vol.6, 37, 2011. (EI)
[26] Di Liu, Yongqiang Ning, Yugang Zeng, Li Qin, Yun Liu, Xing Zhang, Lisen Zhang, Jinsheng Zhang, C.Z.Tong, and Lijun Wang, “High-power-density high-efficiency bottom-emitting vertical-cavity surface-emitting laser array,” Applied Physics Express,” vol.4, 052104, 2011. (EI, SCI) 

2010
[25]. C. Z. Tong, B. Bijlani, S. Alali and A.S. Helmy, “Characteristics of edge emitting Bragg reflection waveguide lasers,” IEEE J. Quantum Electron., vol.46, pp.1605-1610, 2010. (SCI)
[24]. D. W. Xu, C. Z. Tong, S. F. Yoon, L. J. Zhao, Y. Ding, and W. J. Fan, “Self-heating effect in 1.3μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers,” J. Appl. Phys. vol.107, 063107, 2010. (EI, SCI)
[23].R.Wang, S. F. Yoon, H. X. Zhao, C. Z. Tong, C.Y. Liu, Q. Cao, “Temperature- dependent study on modal gain and differential gain of 1.3-µm InAs–GaAs QD lasers with different doping levels,” IEEE Photon. Technol. Lett., vol.22, 1045, 2010. (SCI)
[22]. H. X. Zhao, S. F. Yoon, C. Y. Ngo, R. Wang, C. Z. Tong, C. Y. Liu, and Q. Cao, “Effects of thermal annealing on the dynamic characteristics of InAs/GaAs quantum dot lasers,” IEEE Photonics Journal, vol.2, 630, 2010. (EI)
[21].Y. Ding, W.J. Fan, D.W. Xu, C.Z. Tong, Y. Liu, L.J. Zhao, “Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach,” Appl. Phys. B, vol.97, no.4, pp. 773-778, 2010. (EI, SCI) 

2009
[20]. C. Z. Tong, D.W. Xu, S. F. Yoon, Y. Ding and W. J. Fan, “Temperature characteristics of 1.3μm p-doped InAs-GaAs quantum dot vertical-cavity surface-emitting lasers,” IEEE J. Select. Topics Quantum Electron., vol.15, 743, 2009. (SCI)
[19]. C. Z. Tong, D. W. Xu, S. F. Yoon, “Theoretical investigation of 1.3μm dots-under-a-well and dots-in-a-well InAs/GaAs quantum dot vertical-cavity surface-emitting lasers,” J. Appl. Phys. vol.106, 033106, 2009. (EI, SCI)
[18]. C. Z. Tong, D.W. Xu and S. F. Yoon, “Carrier relaxation and modulation response of 1.3？m InAs-GaAs quantum dot lasers,” J. Lightwave. Tech., vol.27, no.23, pp. 5442-5450, 2009. (SCI)
[17]. R. Wang, C. Z. Tong, S. F. Yoon, C.Y. Liu, H. X. Zhao and Q. Cao, “Temperature characteristics of gain profiles in 1.3µm p-doped and undoped InAs/GaAs quantum dot lasers,” IEEE Electron Device Lett., vo. 30, no.12, pp. 1311-1333, 2009. (EI, SCI)
[16]. D. W. Xu, C. Z. Tong, S. F. Yoon, W. J. Fan, D. H. Zhang, M. Wasiak, ？. Piskorski, K. Gutowski, R.P.Sarza？a and W.Nakwaski, “Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3µm optical-fibre communication”, Semiconductor Science and Technology, vol. 24, 055003, 2009. (SCI)
[15]. Q. Cao, S. F. Yoon, C. Z. Tong, C. Y. Ngo, C. Y. Liu，R. Wang and H. X. Zhao, “Two-state competition in 1.3？m multilayer InAs/InGaAs quantum dot lasers,” Appl. Phys. Lett., vol.95, 191101, 2009. (EI, SCI)
[14]. D. W. Xu, S. F. Yoon, C.Z.Tong, L. J. Zhao, Y. Ding, and W. J. Fan, “High-temperature continuous-wave single-mode operation of 1.3-μm p-doepd InAs–GaAs quantum-dot VCSELs,” IEEE Photon. Technol. Lett., vol.21, no.17, pp.1211-1213, 2009. (EI, SCI)
[13]. Y. Ding, W. J. Fan, D. W. Xu, C. Z. Tong, S. F. Yoon, D. H. Zhang, L. J. Zhao, W. Wang, Y. Liu, N. H. Zhu, “Fabrication and modulation characteristics of 1.3-μm p-doped InAs quantum dot vertical cavity surface emitting lasers,” Journal of Physics D: Applied Physics, vol.42, 085117, 2009. (EI, SCI)
[12]. Y. Wang, S. F. Yoon, C. Y. Ngo, C.Z.Tong, and C. Y. Liu, “A study of low energy Ar+ sputtering induced surface morphological evolution on GaAs substrates,” J. Appl. Phys. vol. 106, 024301, 2009. (SCI) 

2008
[11]. C. Z. Tong, S. F. Yoon, “Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy,” Nanotechnology, vol. 19, 365604, 2008. (SCI)
[10]. D.W. Xu, S. F. Yoon, C. Z. Tong, “Self-consistent analysis of carrier confinement and output power in 1.3μm InAs-GaAs quantum-dot VCSELs,” IEEE J. Quantum Electron., vol.44, no.9, pp. 879-885, 2008. (SCI)
[9]. Q. Cao, S.F.Yoon, C.Y.Liu, C. Z. Tong, “Effects of rapid thermal annealing on optical properties of p-doped and undoped InAs/InGaAs dots-in-a-well structures,” J. Appl. Phys. vol.104, 033522, 2008. (SCI) 

2007
[8]. C. Z. Tong, S. F. Yoon, and C. Y. Liu, “Rate equation model of the negative characteristic temperature of InAs/GaAs quantum dot lasers,”J. Appl. Phys.vol.101, 104506, 2007. (SCI)
[7]. C. Y. Ngo, S F Yoon, C. Z. Tong, W.K. Loke and S. J. Chua, “An investigation of growth temperature on the surface morphology and optical properties of 1.3µm InAs/InGaAs/GaAs quantum dot structures,” Nanotechnology, vol.18,365708, 2007. (SCI)
[6]. C. Y. Liu, S. F. Yoon, Q. Cao, C. Z. Tong, “Low transparency current density and high temperature operation from ten-layer p-doped 1.3µm InAs/InGaAs/GaAs quantum dot lasers,” Appl. Phys. Lett. 90, 041103, 2007. (SCI) 

Before 2006
[5]. C. Z. Tong, S. F. Yoon, C.Y. Ngo, C. Y. Liu, and W. K. Loke, “Rate equations for 1.3µm dots-under-a-well and dots-in-a-well self-assembled InAs/GaAs quantum dot lasers,” IEEE J. Quantum Electron., vol.42, no.11, pp.1175-1183, 2006. (SCI)
[4]. C. Y. Liu, S. F. Yoon, Q. Cao, C. Z. Tong , Z. Z. Sun, “Comparative analysis of cavity length-dependent temperature sensitivity of GaInNAs quantum dot lasers and quantum well lasers,” Nanotechnology, vol.17, pp.5627-5631, 2006.(SCI)
[3]Q.Han, Z.C.Niu, H.Q.Ni, S.Y.Zhang, X.H.Yang, Y.Du, C.Z.Tong, H. Zhao, Y.Q.Xu, H,L. Peng , R.H.Wu, “Room temperature continuous wave operation of 1.33-μm InAs/GaAs quantum dot laser with high output power,” Chinese Optics of Letters,vol.4, no.7, 413, 2006. (EI)
[2] Q. Han, X.H.Yang, Z.C.Niu, H.Q.Ni, Y.Q.Xu, S.Y.Zhang, Y.Du, L.H.Peng, H.Zhao, C.Z.Tong, R.H.Wu and Q.M.Wang “1.55μm GaInNAs resonant cavity enhanced photodetector grown on GaAs”, Appl. Phys. Lett.vol.87, 111105 (2005). (EI)
[1] H. Y. Bai, C. Z. Tong, and P. Zheng, “Electrical resistivity in Zr48Nb8Cu12Fe8Be24 glassy and crystallized alloys,” J. Appl. Phys. vol.95, No.4, 1269, 2004. (SCI)

1.“Luminescent Devices of Quantum Dots with Ultralow Power Consumption,” National Fundamental Research Program (“973”Plan) (Grant no. 2013CB933300), Ministry of Science and Technology (MOST) of the PRC,  Jan. 2013-Dec. 2017. (Co-PI)
2. International Science Technology Cooperation Program of China,  MOST of the PRC, Apr. 2013--Mar. 2016. (PI)
3.“High Power, Low Divergence Quantum Dot Longitudinal Photonic Bandgap Laser,” National Natural Science Foundation of China (Grant no. 61176046), Jan 2012- Dec. 2015. (PI).
4.“Investigation of Novel Bragg Reflection Waveguide Lasers,” National Natural Science Foundation of China (Grant no. 61076064),  Jan 2012- Dec. 2015. (PI). 
5.“High Power High Brightness Photonic Crystal Lasers and Array,” Project of Frontier Field for the Knowledge Innovation Program, (Grant.no. Y10832M110), Aug. 2011-Dec. 2013.(PI) 
6. “High Brightness Bragg Waveguide Lasers,” Hundred Talents Program Project, Chinese Academy of Sciences (CAS), Nov.2010-Dec. 2013, (PI).

[1]Tong Cunzhu, “High Power Low Divergence Semiconductor Lasers”, The Institute of Optics, University of Rochester, USA, 4 June 2013.
[2]Tong Cunzhu, “High Brightness Semiconductor Lasers”, The IEEE Photonics Society (Montreal Chapter) Seminar, McGill University, Canada, 7 June 2013. 
[3] Tong Cunzhu, “50-Year-Old Lasers: Lasers’ Research and Applications in China,” CIOMP-OSA Summer Session: Lasers and Their Applications, 31 Jul.-3 Aug.2011, pp 1-3, Chang Chun, Aug.2011. 
[4] C.Z.Tong, Y.Y.Chen, L.Wang, L.J.Wang, “Single Quantum Dot Lasers-Theory and Simulation,” Virtual Conference on Nanoscale Science and Technology, Oct. 26- 29, 2011 Chengdu, China.
[5]C. Z. Tong, “Recent Advances in High Power, High Brightness Semiconductor Lasers,” International Symposium on Development and Application of High Power Laser Technology, 15-17 April, 2013, Chengdu, China. 
[6] C. Z. Tong, “Trends and Challenges in High Power Semiconductor Laser Beam Combining Technology,” Optics and fine mechanics China 2012 Symposium, Sanya, China, Sep.19-20, 2012. 
[7] L. J. Wang, C. Z. Tong, H. Y. Peng, J. Zhang, “High Power Semiconductor Laser Beam Combining Technology and its Applications,” The 2nd International Symposium on Laser Interaction with Matter, Xi’an, China, Proc. SPIE 8796, 87961N, Sep.9-12, 2012. 
[8] C.Z.Tong, “High Power, High Beam Quality Semiconductor Lasers and Their Applications in the Laser Processing,” Light Conference－International Conference on Frontiers of Laser Processing (ICFL2013),July 8-12, 2013, Changchun, China.

已指导学生

汪丽杰  博士研究生  070205-凝聚态物理  

邢恩博  博士研究生  070205-凝聚态物理  

戎佳敏  博士研究生  070205-凝聚态物理  

王涛  博士研究生  070205-凝聚态物理  

卢泽丰  博士研究生  070205-凝聚态物理  

董立超  硕士研究生  070205-凝聚态物理  

孙方圆  博士研究生  070205-凝聚态物理  

赵宇飞  硕士研究生  070205-凝聚态物理  

陆寰宇  博士研究生  070205-凝聚态物理  

侯冠宇  博士研究生  070205-凝聚态物理  

曹宇轩  硕士研究生  070205-凝聚态物理  

冯健  博士研究生  070205-凝聚态物理  

王延靖  博士研究生  070205-凝聚态物理  

张新  博士研究生  070205-凝聚态物理  

佟海霞  硕士研究生  070205-凝聚态物理  

李儒颂  硕士研究生  070205-凝聚态物理  

蔡凯迪  博士研究生  070205-凝聚态物理  

王子烨  博士研究生  070205-凝聚态物理  

张玮  硕士研究生  085400-电子信息  

现指导学生

周航  博士研究生  080903-微电子学与固体电子学  

于圣杰  博士研究生  080903-微电子学与固体电子学  

王品尧  博士研究生  080903-微电子学与固体电子学  

张乐全  硕士研究生  080903-微电子学与固体电子学  

刘天宏  硕士研究生  080903-微电子学与固体电子学  

王梦奇  硕士研究生  080903-微电子学与固体电子学  

刘鹏  博士研究生  080903-微电子学与固体电子学