基本信息
沈桂英 女 硕导 中国科学院半导体研究所
电子邮件： shenguiying@semi.ac.cn
通信地址： 北京市 海淀区 清华东路甲35号 中科院半导体研究所
邮政编码： 100083
电子邮件： shenguiying@semi.ac.cn
通信地址： 北京市 海淀区 清华东路甲35号 中科院半导体研究所
邮政编码： 100083
招生信息
招生专业
080501-材料物理与化学
招生方向
单晶材料，晶体缺陷，晶体生长，表面制备
教育背景
2013-09--2018-06 中国科学院大学 博士
2009-09--2013-07 燕山大学 学士
2009-09--2013-07 燕山大学 学士
工作经历
工作简历
2022-09~2023-06,中国科学院半导体研究所, 副研究员
2020-12~2022-09,中国科学院半导体研究所, 助理研究员
2018-07~2020-11,中国科学院半导体研究所, 博士后
2020-12~2022-09,中国科学院半导体研究所, 助理研究员
2018-07~2020-11,中国科学院半导体研究所, 博士后
教授课程
半导体材料
专利与奖励
专利成果
（ 1 ） 锑化镓单晶表面的氧化层厚度的控制方法, 发明专利, 2022, 第 4 作者, 专利号: CN114203526A
（ 2 ） 锑化镓晶片湿法腐蚀方法, 发明专利, 2022, 第 4 作者, 专利号: CN114108102A
（ 3 ） 一种去除锑化镓单晶片残余应力的退火方法, 发明专利, 2021, 第 5 作者, 专利号: CN112899790A
（ 4 ） 掺硫砷化铟体单晶片、其腐蚀方法及腐蚀剂, 发明专利, 2020, 第 4 作者, 专利号: CN110965129A
（ 5 ） 砷化铟单晶片位错腐蚀液及位错腐蚀检测方法, 专利授权, 2019, 第 1 作者, 专利号: CN110205681A
（ 6 ） 背表面场GaSb热光伏电池及其制备方法, 专利授权, 2018, 第 4 作者, 专利号: CN108831933A
（ 7 ） 籽晶保护装置及单晶生长方法, 专利授权, 2018, 第 3 作者, 专利号: CN108546986A
（ 8 ） 一种制备P型锰掺杂的砷化铟单晶的方法, 发明专利, 2018, 第 1 作者, 专利号: CN108085744A
（ 2 ） 锑化镓晶片湿法腐蚀方法, 发明专利, 2022, 第 4 作者, 专利号: CN114108102A
（ 3 ） 一种去除锑化镓单晶片残余应力的退火方法, 发明专利, 2021, 第 5 作者, 专利号: CN112899790A
（ 4 ） 掺硫砷化铟体单晶片、其腐蚀方法及腐蚀剂, 发明专利, 2020, 第 4 作者, 专利号: CN110965129A
（ 5 ） 砷化铟单晶片位错腐蚀液及位错腐蚀检测方法, 专利授权, 2019, 第 1 作者, 专利号: CN110205681A
（ 6 ） 背表面场GaSb热光伏电池及其制备方法, 专利授权, 2018, 第 4 作者, 专利号: CN108831933A
（ 7 ） 籽晶保护装置及单晶生长方法, 专利授权, 2018, 第 3 作者, 专利号: CN108546986A
（ 8 ） 一种制备P型锰掺杂的砷化铟单晶的方法, 发明专利, 2018, 第 1 作者, 专利号: CN108085744A
出版信息
发表论文
[1] Yinhong Feng, Guiying Shen, Youwen Zhao, Jingming Liu, Jun Yang, Hui Xie, Jianjun He. Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023, 第 2 作者167: http://dx.doi.org/10.1016/j.mssp.2023.107770.
[2] Shen Guiying, Zhao Youwen, He Jianjun. Structural Characterization of Carbon-implanted GaSb. JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY. MATERIALS SCIENCE EDITION[J]. 2023, 第 1 作者38(5): 969-973, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=7550884&detailType=1.
[3] 冯银红, 沈桂英, 赵有文, 刘京明, 杨俊, 谢辉, 何建军, 王国伟. 无位错Te-GaSb（100）单晶抛光衬底的晶格完整性. 人工晶体学报. 2022, 第 2 作者51(6): 1003-1011, https://d.wanfangdata.com.cn/periodical/rgjtxb98202206007.
[4] Shen, Guiying, Zhao, Youwen, Liu, Jingming, Yang, Jun, Xie, Hui, He, Jianjun, Wang, Guowei. Oxidation related particles on GaSb (100) substrate surfaces. JOURNAL OF CRYSTAL GROWTH[J]. 2022, 第 1 作者581: http://dx.doi.org/10.1016/j.jcrysgro.2021.126499.
[5] Liu, Lijie, Zhao, Youwen, Huang, Yong, Zhao, Yu, Xie, Hui, Wang, Jun, Wang, Yingli, Shen, Guiying. Evaluation of LEC and VGF-InAs substrates through surface defect characterization and epitaxy growth. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2021, 第 8 作者125: http://dx.doi.org/10.1016/j.mssp.2020.105624.
[6] Zhou, Yuan, Zhao, Youwen, Xie, Hui, Shen, Guiying, Liu, Jingming, Yang, Jun. Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2021, 第 4 作者60(3): http://dx.doi.org/10.35848/1347-4065/abe815.
[7] Zhou, Yuan, Zhao, Youwen, Shen, Guiying, Xie, Hui, Liu, Jingming, Yang, Jun, Liu, Lijie. Evaluation of residual stress in InP and InAs (100) substrates obtained from single crystals grown by LEC and VGF methods. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2021, 第 3 作者121: http://dx.doi.org/10.1016/j.mssp.2020.105460.
[8] Yang, Jun, Lu, Wei, Duan, Manlong, Xie, Hui, Shen, Guiying, Liu, Jingmin, Dong, Zhiyuan, Zhao, Youwen. VGF growth of high quality InAs single crystals with low dislocation density. JOURNAL OF CRYSTAL GROWTH[J]. 2020, 第 5 作者531: http://dx.doi.org/10.1016/j.jcrysgro.2019.125350.
[9] Shen, Guiying, Zhao, Youwen, Sun, Jing, Liu, Jingming, Xie, Hui, Yang, Jun, Dong, Zhiyuan. HCl-H2SO4-H2O solution etching behavior of InAs (100) surface. JOURNAL OF CRYSTAL GROWTH[J]. 2020, 第 1 作者547: http://dx.doi.org/10.1016/j.jcrysgro.2020.125800.
[10] Shen, Guiying, Zhao, Youwen, Sun, Jing, Liu, Jingming, Dong, Zhiyuan, Xie, Hui, Wang, Fenghua, Yang, Jun. A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods. JOURNAL OF ELECTRONIC MATERIALS[J]. 2020, 第 1 作者49(9): 5104-5109, https://www.webofscience.com/wos/woscc/full-record/WOS:000522014700004.
[11] Shen, Guiying, Zhao, Youwen, Yu, Ding, Liu, Jingming, Dong, Zhiyuan, Xie, Hui. Electrical conduction of C-implanted InAs single crystal. MATERIALS RESEARCH EXPRESS[J]. 2019, 第 1 作者 通讯作者 6(5): http://dx.doi.org/10.1088/2053-1591/ab067b.
[12] Sun, Jing, Shen, Guiying, Xie, Hui, Liu, Jingming, Yu, Ding, Zhao, Youwen. Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals. JOURNAL OF CRYSTAL GROWTH[J]. 2019, 第 2 作者526: http://dx.doi.org/10.1016/j.jcrysgro.2019.125237.
[13] Yu, Ding, Shen, Guiying, Xie, Hui, Liu, Jingming, Sun, Jing, Zhao, Youwen. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal. CHINESE PHYSICS B[J]. 2019, 第 2 作者28(5): http://lib.cqvip.com/Qikan/Article/Detail?id=7001972015.
[14] Guiying Shen, Youwen Zhao, Yongbiao Bai, Jingming Liu, Hui Xie, Zhiyuan Dong, Jun Yang, Ding Yu. Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals. 半导体学报:英文版[J]. 2019, 第 1 作者40(4): 13-16, http://lib.cqvip.com/Qikan/Article/Detail?id=7001831619.
[15] Shen Guiying, Zhao Youwen, Bai Yongbiao, Liu Jingming, Xie Hui, Dong Zhiyuan, Yang Jun, Yu Ding. Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals. JOURNAL OF SEMICONDUCTORS[J]. 2019, 第 1 作者40(4): http://lib.cqvip.com/Qikan/Article/Detail?id=7001831619.
[16] 余丁, 沈桂英, 谢辉, 刘京明, 孙静, 赵有文. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal. 中国物理B:英文版[J]. 2019, 第 2 作者28(5): 263-267, http://lib.cqvip.com/Qikan/Article/Detail?id=7001972015.
[17] Shen, Guiying, Zhao, Youwen, Bai, Yongbiao, Yu, Ding, Liu, Jingming, Xie, Hui, Dong, Zhiyuan, Yang, Jun, Yang, Fengyun, Wang, Fenghua. Impurity band conduction in Mn-doped p type InAs single crystal. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2018, 第 1 作者 通讯作者 84: 115-118, http://dx.doi.org/10.1016/j.mssp.2018.05.014.
[18] Shen, Guiying, Zhao, Youwen, Liu, Jingming, Bai, Yongbiao, Dong, Zhiyuan, Xie, Hui, Chen, Xiaoyu. LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method. JOURNAL OF ELECTRONIC MATERIALS[J]. 2018, 第 1 作者 通讯作者 47(9): 4998-5001,
[19] Shen, Guiying, Zhao, Youwen, Dong, Zhiyuan, Liu, Jingming, Xie, Hui, Bai, Yongbiao, Chen, Xiaoyu. Enhancement of below gap transmission of InAs single crystal via suppression of native defects. MATERIALS RESEARCH EXPRESS[J]. 2017, 第 1 作者 通讯作者 4(3): http://ir.semi.ac.cn/handle/172111/28308.
[20] Bai, YongBiao, Zhao, YouWen, Shen, GuiYing, Chen, XiaoYu, Liu, JingMing, Xie, Hui, Dong, ZhiYuan, Yang, Jun, Yang, FengYun, Wang, FengHua. N-type GaSb single crystals with high below-band gap transmission. CHINESE PHYSICS B[J]. 2017, 第 3 作者26(10): http://ir.semi.ac.cn/handle/172111/28307.
[21] Su Jie, Liu Tong, Liu Jingming, Yang Jun, Shen Guiying, Bai Yongbiao, Dong Zhiyuan, Wang Fangfang, Zhao Youwen. Electrical and optical property of annealed Te-doped GaSb. JOURNAL OF SEMICONDUCTORS[J]. 2017, 第 5 作者38(4): 043001-1,
[22] Chen Xiaoyu, Zhao Youwen, Dong Zhiyuan, Shen Guiying, Bai Yongbiao, Liu Jingming, Xie Hui, He Jiangbian. Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment. 半导体学报：英文版[J]. 2017, 第 4 作者38(11): 114004-1, http://lib.cqvip.com/Qikan/Article/Detail?id=673691418.
[23] Su, Jie, Liu, Tong, Liu, JingMing, Yang, Jun, Bai, YongBiao, Shen, GuiYing, Dong, ZhiYuan, Wang, FangFang, Zhao, YouWen. Thermally induced native defect transform in annealed GaSb. CHINESE PHYSICS B[J]. 2016, 第 6 作者25(7): http://ir.semi.ac.cn/handle/172111/27762.
[2] Shen Guiying, Zhao Youwen, He Jianjun. Structural Characterization of Carbon-implanted GaSb. JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY. MATERIALS SCIENCE EDITION[J]. 2023, 第 1 作者38(5): 969-973, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=7550884&detailType=1.
[3] 冯银红, 沈桂英, 赵有文, 刘京明, 杨俊, 谢辉, 何建军, 王国伟. 无位错Te-GaSb（100）单晶抛光衬底的晶格完整性. 人工晶体学报. 2022, 第 2 作者51(6): 1003-1011, https://d.wanfangdata.com.cn/periodical/rgjtxb98202206007.
[4] Shen, Guiying, Zhao, Youwen, Liu, Jingming, Yang, Jun, Xie, Hui, He, Jianjun, Wang, Guowei. Oxidation related particles on GaSb (100) substrate surfaces. JOURNAL OF CRYSTAL GROWTH[J]. 2022, 第 1 作者581: http://dx.doi.org/10.1016/j.jcrysgro.2021.126499.
[5] Liu, Lijie, Zhao, Youwen, Huang, Yong, Zhao, Yu, Xie, Hui, Wang, Jun, Wang, Yingli, Shen, Guiying. Evaluation of LEC and VGF-InAs substrates through surface defect characterization and epitaxy growth. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2021, 第 8 作者125: http://dx.doi.org/10.1016/j.mssp.2020.105624.
[6] Zhou, Yuan, Zhao, Youwen, Xie, Hui, Shen, Guiying, Liu, Jingming, Yang, Jun. Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2021, 第 4 作者60(3): http://dx.doi.org/10.35848/1347-4065/abe815.
[7] Zhou, Yuan, Zhao, Youwen, Shen, Guiying, Xie, Hui, Liu, Jingming, Yang, Jun, Liu, Lijie. Evaluation of residual stress in InP and InAs (100) substrates obtained from single crystals grown by LEC and VGF methods. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2021, 第 3 作者121: http://dx.doi.org/10.1016/j.mssp.2020.105460.
[8] Yang, Jun, Lu, Wei, Duan, Manlong, Xie, Hui, Shen, Guiying, Liu, Jingmin, Dong, Zhiyuan, Zhao, Youwen. VGF growth of high quality InAs single crystals with low dislocation density. JOURNAL OF CRYSTAL GROWTH[J]. 2020, 第 5 作者531: http://dx.doi.org/10.1016/j.jcrysgro.2019.125350.
[9] Shen, Guiying, Zhao, Youwen, Sun, Jing, Liu, Jingming, Xie, Hui, Yang, Jun, Dong, Zhiyuan. HCl-H2SO4-H2O solution etching behavior of InAs (100) surface. JOURNAL OF CRYSTAL GROWTH[J]. 2020, 第 1 作者547: http://dx.doi.org/10.1016/j.jcrysgro.2020.125800.
[10] Shen, Guiying, Zhao, Youwen, Sun, Jing, Liu, Jingming, Dong, Zhiyuan, Xie, Hui, Wang, Fenghua, Yang, Jun. A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods. JOURNAL OF ELECTRONIC MATERIALS[J]. 2020, 第 1 作者49(9): 5104-5109, https://www.webofscience.com/wos/woscc/full-record/WOS:000522014700004.
[11] Shen, Guiying, Zhao, Youwen, Yu, Ding, Liu, Jingming, Dong, Zhiyuan, Xie, Hui. Electrical conduction of C-implanted InAs single crystal. MATERIALS RESEARCH EXPRESS[J]. 2019, 第 1 作者 通讯作者 6(5): http://dx.doi.org/10.1088/2053-1591/ab067b.
[12] Sun, Jing, Shen, Guiying, Xie, Hui, Liu, Jingming, Yu, Ding, Zhao, Youwen. Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals. JOURNAL OF CRYSTAL GROWTH[J]. 2019, 第 2 作者526: http://dx.doi.org/10.1016/j.jcrysgro.2019.125237.
[13] Yu, Ding, Shen, Guiying, Xie, Hui, Liu, Jingming, Sun, Jing, Zhao, Youwen. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal. CHINESE PHYSICS B[J]. 2019, 第 2 作者28(5): http://lib.cqvip.com/Qikan/Article/Detail?id=7001972015.
[14] Guiying Shen, Youwen Zhao, Yongbiao Bai, Jingming Liu, Hui Xie, Zhiyuan Dong, Jun Yang, Ding Yu. Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals. 半导体学报:英文版[J]. 2019, 第 1 作者40(4): 13-16, http://lib.cqvip.com/Qikan/Article/Detail?id=7001831619.
[15] Shen Guiying, Zhao Youwen, Bai Yongbiao, Liu Jingming, Xie Hui, Dong Zhiyuan, Yang Jun, Yu Ding. Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals. JOURNAL OF SEMICONDUCTORS[J]. 2019, 第 1 作者40(4): http://lib.cqvip.com/Qikan/Article/Detail?id=7001831619.
[16] 余丁, 沈桂英, 谢辉, 刘京明, 孙静, 赵有文. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal. 中国物理B:英文版[J]. 2019, 第 2 作者28(5): 263-267, http://lib.cqvip.com/Qikan/Article/Detail?id=7001972015.
[17] Shen, Guiying, Zhao, Youwen, Bai, Yongbiao, Yu, Ding, Liu, Jingming, Xie, Hui, Dong, Zhiyuan, Yang, Jun, Yang, Fengyun, Wang, Fenghua. Impurity band conduction in Mn-doped p type InAs single crystal. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2018, 第 1 作者 通讯作者 84: 115-118, http://dx.doi.org/10.1016/j.mssp.2018.05.014.
[18] Shen, Guiying, Zhao, Youwen, Liu, Jingming, Bai, Yongbiao, Dong, Zhiyuan, Xie, Hui, Chen, Xiaoyu. LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method. JOURNAL OF ELECTRONIC MATERIALS[J]. 2018, 第 1 作者 通讯作者 47(9): 4998-5001,
[19] Shen, Guiying, Zhao, Youwen, Dong, Zhiyuan, Liu, Jingming, Xie, Hui, Bai, Yongbiao, Chen, Xiaoyu. Enhancement of below gap transmission of InAs single crystal via suppression of native defects. MATERIALS RESEARCH EXPRESS[J]. 2017, 第 1 作者 通讯作者 4(3): http://ir.semi.ac.cn/handle/172111/28308.
[20] Bai, YongBiao, Zhao, YouWen, Shen, GuiYing, Chen, XiaoYu, Liu, JingMing, Xie, Hui, Dong, ZhiYuan, Yang, Jun, Yang, FengYun, Wang, FengHua. N-type GaSb single crystals with high below-band gap transmission. CHINESE PHYSICS B[J]. 2017, 第 3 作者26(10): http://ir.semi.ac.cn/handle/172111/28307.
[21] Su Jie, Liu Tong, Liu Jingming, Yang Jun, Shen Guiying, Bai Yongbiao, Dong Zhiyuan, Wang Fangfang, Zhao Youwen. Electrical and optical property of annealed Te-doped GaSb. JOURNAL OF SEMICONDUCTORS[J]. 2017, 第 5 作者38(4): 043001-1,
[22] Chen Xiaoyu, Zhao Youwen, Dong Zhiyuan, Shen Guiying, Bai Yongbiao, Liu Jingming, Xie Hui, He Jiangbian. Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment. 半导体学报：英文版[J]. 2017, 第 4 作者38(11): 114004-1, http://lib.cqvip.com/Qikan/Article/Detail?id=673691418.
[23] Su, Jie, Liu, Tong, Liu, JingMing, Yang, Jun, Bai, YongBiao, Shen, GuiYing, Dong, ZhiYuan, Wang, FangFang, Zhao, YouWen. Thermally induced native defect transform in annealed GaSb. CHINESE PHYSICS B[J]. 2016, 第 6 作者25(7): http://ir.semi.ac.cn/handle/172111/27762.
科研活动
科研项目
（ 1 ） InAs单晶衬底亚表面晶格损伤的产生与抑制, 负责人, 国家任务, 2024-01--2027-12
（ 2 ） 砷化镓多晶合成及单晶衬底抛光技术, 负责人, 境内委托项目, 2022-03--2024-06
（ 3 ） 2021年大功率微波芯片用超高纯铟金属项目, 负责人, 国家任务, 2021-05--2023-06
（ 4 ） 化合物半导体光电子材料联合实验室, 负责人, 境内委托项目, 2020-05--2023-05
（ 5 ） 内生富镓对GaSb单晶表面、异质结界面及相关性质的影响, 负责人, 国家任务, 2020-01--2022-12
（ 2 ） 砷化镓多晶合成及单晶衬底抛光技术, 负责人, 境内委托项目, 2022-03--2024-06
（ 3 ） 2021年大功率微波芯片用超高纯铟金属项目, 负责人, 国家任务, 2021-05--2023-06
（ 4 ） 化合物半导体光电子材料联合实验室, 负责人, 境内委托项目, 2020-05--2023-05
（ 5 ） 内生富镓对GaSb单晶表面、异质结界面及相关性质的影响, 负责人, 国家任务, 2020-01--2022-12