080903-微电子学与固体电子学

化合物半导体器件与射频集成电路

2006-09--2011-07   中国科学院研究生院   获得博士学位

   

2014-12~现在, 中国科学院微电子研究所, 副研究员
2011-07~2014-12,中国科学院微电子研究所, 助理研究员

   

[1] 甄文祥, 苏永波, 李少军, 金智. 一种四路交织高速宽带采样保持电路. CN: CN111900989A, 2020-11-06.
[2] 甄文祥, 苏永波, 李少军, 金智. 一种多相多占空比的时钟产生电路. CN: CN111756354A, 2020-10-09.
[3] 汪宁, 苏永波, 丁芃, 王大海, 金智. 一种氧化镓基场效应管的工艺改进方法. CN: CN111180314A, 2020-05-19.
[4] 常虎东, 孙兵, 苏永波, 丁芃, 刘洪刚, 金智, 刘新宇. 一种衬底上的InP外延转移方法及制得的半导体器件. CN: CN110600385A, 2019-12-20.
[5] 常虎东, 孙兵, 翟明龙, 苏永波, 丁芃, 刘洪刚, 金智, 刘新宇. 晶圆异构对准方法及装置. CN: CN110600414A, 2019-12-20.
[6] 常虎东, 孙兵, 苏永波, 丁芃, 刘洪刚, 金智, 刘新宇. 一种硅衬底上外延GaAs的方法及制得的半导体器件. CN: CN110534409A, 2019-12-03.
[7] 常虎东, 孙兵, 苏永波, 刘洪刚. 硅基半导体与化合物半导体异构集成方法及异构集成器件. CN: CN110534417A, 2019-12-03.
[8] 常虎东, 孙兵, 翟明龙, 苏永波, 丁芃, 刘洪刚, 金智, 刘新宇. 一种硅衬底上外延InP半导体的方法及制得的半导体器件. CN: CN110517948A, 2019-11-29.
[9] 许靓, 姚鸿飞, 丁芃, 苏永波, 金智. 探针型波导微带转换装置. CN: CN205646074U, 2016-10-12.
[10] 樊捷, 苏永波. 一种BCB材料的刻蚀方法. CN: CN105390386A, 2016-03-09.
[11] 汪宁, 苏永波, 金智. 一种对InP材料进行减薄和抛光的方法. CN: CN103199014A, 2013-07-10.
[12] 汪宁, 苏永波, 金智. 一种对InP衬底进行化学机械抛光的方法. CN: CN103144023A, 2013-06-12.
[13] 金智, 麻芃, 郭建楠, 苏永波, 王显泰. 一种碳基场效应晶体管及其制备方法. CN: CN102593169A, 2012-07-18.
[14] 汪宁, 王显泰, 苏永波, 郭建楠, 金智. 一种制作磷化铟单片微波集成电路的方法. CN: CN102509721A, 2012-06-20.
[15] 郭建楠, 金智, 苏永波, 王显泰. 一种InP HBT器件侧墙的制备方法. CN: CN102244003A, 2011-11-16.
[16] 陈高鹏, 吴旦昱, 苏永波, 金智, 刘新宇. InP DHBT W波段功率放大器单片集成电路的稳定网络结构. CN: CN101989838A, 2011-03-23.
[17] 程伟, 金智, 苏永波, 刘新宇. 利用苯并环丁烯制作介质桥的方法. CN: CN101800189A, 2010-08-11.
[18] 程伟, 金智, 苏永波, 刘新宇. 利用聚酰亚胺制作介质桥的方法. CN: CN101800191A, 2010-08-11.

   

[1] Wang, YanFu, Wang, Bo, Feng, RuiZe, Tong, ZhiHang, Liu, Tong, Ding, Peng, Su, YongBo, Zhou, JingTao, Yang, Feng, Ding, WuChang, Jin, Zhi. Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology. CHINESE PHYSICS B[J]. 2022, 31(1): 658-663, http://dx.doi.org/10.1088/1674-1056/ac05b2.
[2] Feng, ShiYu, Su, YongBo, Ding, Peng, Zhou, JingTao, Peng, SongAng, Ding, WuChang, Jin, Zhi. Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation. CHINESE PHYSICS B[J]. 2022, 31(4): 638-646, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000777833200001.
[3] Zhen, Wenxiang, Cao, Shurui, Su, Yongbo, Li, Shaojun, Jin, Zhi. A Novel Design Method of SOF for InP DHBT ECL and CML Static Frequency Dividers. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS[J]. 2021, 31(6): 583-586, http://dx.doi.org/10.1109/LMWC.2021.3064075.
[4] Chen, Yao, Yang, LinAn, Jin, Zhi, Su, YongBo, Hao, Yue. Effect of Fixed Charges at Interface Between InP and Bonding Layer on Heterogeneous Integration of InP HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(5): 2226-2232, http://dx.doi.org/10.1109/TED.2021.3066139.
[5] Hu, Jun, Wang, Xi, Li, Shaojun, Asif, Muhammad, Ding, Peng, Su, Yongbo, Ding, Wuchang, Yang, Feng, Chen, Xiaojuan, Jin, Zhi. Analysis and design of a stacked power amplifier with 196% fractional bandwidth using equivalent circuit model. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING[J]. 2020, 30(5): http://dx.doi.org/10.1002/mmce.22143.
[6] 金智, 苏永波, 周静涛, 丁芃, 丁武昌, 杨枫, 刘桐. InP基毫米波、太赫兹器件及电路. 微波学报[J]. 2020, 5-8, http://lib.cqvip.com/Qikan/Article/Detail?id=00002FUOK9987JP0MP508JP1MLR.
[7] Ding, Wuchang, Ding, Peng, Su, Yongbo, Zhou, Jingtao, Yang, Feng, Hu, Jun, Peng, Songang, Shi, Jingyuan, Zhang, Dayong, Jin, Zhi. A de-embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING[J]. 2020, 30(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000521624900001.
[8] Zhen, Wenxiang, Li, Shaojun, Cao, Shurui, Su, Yongbo, Jin, Zhi. A broadband high bandwidth utilization ECL static frequency divider in InP DHBT process. IEICE ELECTRONICS EXPRESS[J]. 2020, 17(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000558628200002.
[9] Li, Shaojun, Su, Yongbo, Lv, Hongliang, Zhou, Lei, Zhang, Yimen, Zhang, Yuming, Hu, Jun, Yang, Feng, Jin, Zhi. A Broadband InP Track-and-Hold Amplifier Using Emitter Capacitive/Resistive Degeneration. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS[J]. 2020, 30(4): 391-394, https://www.webofscience.com/wos/woscc/full-record/WOS:000527791700017.
[10] Tong, Zhihang, Ding, Peng, Su, Yongbo, Niu, Jiebin, Wang, Dahai, Jin, Zhi. Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY[J]. 2020, 8: 600-607, https://doaj.org/article/7eb243b0a0df4893824439b070c241b3.
[11] 甄文祥, 苏永波, 丁芃, 丁武昌, 杨枫, 金智. 基于InP DHBT的宽带高带宽利用率的ECL静态分频器. 微波学报[J]. 2020, 152-155, http://lib.cqvip.com/Qikan/Article/Detail?id=00002FUOK9987JP0MP508JPXMLR.
[12] Wang, Xi, Hu, Jun, Su, Yongbo, Ding, Peng, Ding, Wuchang, Yang, Feng, Muhammad, Asif, Jin, Zhi. A Wideband Gate Mixer Using 0.15 mu m GaAs Enhancement-Mode PHEMT Technology. PROGRESS IN ELECTROMAGNETICS RESEARCH LETTERS[J]. 2019, 84: 7-14, [13] 王溪, 姚鸿飞, 苏永波, 丁武昌, 阿瑟夫, 丁芃, 童志航, 金智. W波段InP DHBT宽带高功率压控振荡器. 红外与毫米波学报[J]. 2019, 38(1): 27-31, http://lib.cqvip.com/Qikan/Article/Detail?id=7001290900.
[14] Hu, Jun, Asif, Muhammad, Wang, Xi, Li, ShaoJun, Chen, XiaoJuan, Ding, Peng, Su, YongBo, Jin, Zhi. A 30 MHz-3 GHz watt-level stacked-FET linear power amplifier. IEICE ELECTRONICS EXPRESS[J]. 2019, 16(11): [15] Wang Xi, Yao HongFei, Su YongBo, Ding WuChang, Muhammad, Asif, Ding Peng, Tong ZhiHang, Jin Zhi. Fundamental W-band InP DHBT-based voltage-controlled oscillator with wide tuning range and high output power. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2019, 38(1): 27-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000460879300005.
[16] Wang Xi, Asif, Muhammad, Tong Zhihang, Jin Zhi, Su Yongbo, Zhao Hua, Ding Wuchang, Ding Peng. Push-Push Oscillators Operating at G-Band Using InP DHBT Technology. MICROWAVE JOURNAL[J]. 2018, 61(9): 66-76, https://www.webofscience.com/wos/woscc/full-record/WOS:000445318300008.
[17] Ding, Peng, Chen, Chen, Asif, Muhammad, Wang, Xi, Niu, Jiebin, Yang, Feng, Ding, Wuchang, Su, Yongbo, Wang, Dahai, Jin, Zhi. Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY[J]. 2018, 6(1): 49-54, https://www.webofscience.com/wos/woscc/full-record/WOS:000423582900007.
[18] Wang Xi, Zhang Bichan, Zhao Hua, Su Yongbo, Muhammad Asif, Guo Dong, Jin Zhi. A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology. JOURNAL OF SEMICONDUCTORS[J]. 2017, 38(8): 085001-1,  http://dx.doi.org/10.1088/1674-4926/38/8/085001.
[19] Wang Qing, Ding Peng, Su Yongbo, Ding Wuchang, Asif, Muhammad, Tang Wu, Jin Zhi. f(T) = 260 GHz and f(max) = 6 0 7 GHz of 100-nm-gate In0.52Al0.As-48/In0.7Ga0.3As HEMTs with G(m.max) = 1441 mS/mm. JOURNAL OF SEMICONDUCTORS[J]. 2016, 37(7): [20] Ding, Peng, Chen, Chen, Ding, Wuchang, Yang, Feng, Su, Yongbo, Wang, Dahai, Jin, Zhi. Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance. SOLID-STATE ELECTRONICS[J]. 2016, 123: 1-5, http://dx.doi.org/10.1016/j.sse.2016.05.011.
[21] 赵华, 王溪, 丁芃, 姚鸿飞, 苏永波, 金智, 刘新宇. 基于光敏BCB工艺的InP基器件性能的研究. 真空科学与技术学报[J]. 2016, 36(10): 1119-1123, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5820895&detailType=1.
[22] Zhao Hua, Yao Hongfei, Ding Peng, Su Yongbo, Ning Xiaoxi, Jin Zhi, Liu Xinyu. A full W-band low noise amplifier module for millimeter-wave applications. JOURNAL OF SEMICONDUCTORS[J]. 2015, 36(9): 95001-1, http://www.irgrid.ac.cn/handle/1471x/1089130.
[23] Wang LiDan, Ding Peng, Su YongBo, Chen Jiao, Zhang BiChan, Jin Zhi. 100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f(T)=249 GHz and f(max)=415 GHz. CHINESE PHYSICS B[J]. 2014, 23(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000335646100094.
[24] 刘新宇, 王鑫华, 黄森, 罗卫军, 苏永波, 姚鸿飞. InP基/GaN基器件与电路在微波毫米波领域“大显身手”. 科学中国人[J]. 2014, 33-36, http://lib.cqvip.com/Qikan/Article/Detail?id=662729944.
[25] Yao, Hongfei, Ning, Xiaoxi, Su, Yongbo, Liu, Xinyu, Jin, Zhi, Shi, Z, Li, J, Zhang, W, Tong, X. A Method for Loop-Circuit Stability Analysis. 2013 INTERNATIONAL WORKSHOP ON MICROWAVE AND MILLIMETER WAVE CIRCUITS AND SYSTEM TECHNOLOGY (MMWCST)null. 2013, 395-398, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000355305700103.
[26] 金智, 丁芃, 苏永波, 张毕禅, 汪丽丹, 周静涛, 杨成樾, 刘新宇. 太赫兹固态电子器件和电路. 空间电子技术[J]. 2013, 10(4): 48-55, http://lib.cqvip.com/Qikan/Article/Detail?id=48161901.
[27] Zhong YingHui, Wang XianTai, Su YongBo, Cao YuXiong, Zhang YuMing, Liu XinYu, Jin Zhi. High performance InP-based In0.52Al0.48As/In0.53Ga0.47 As HEMTs with extrinsic transconductance of 1052 mS/mm. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2013, 32(3): 193-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000321722400001.
[28] 钟英辉, 王显泰, 苏永波, 曹玉雄, 张玉明, 刘新宇, 金智. 有效跨导为1052mS／mm的高性能InP基In0．52Al0．48As／In0．53Ga0．47As HEMTs. 红外与毫米波学报[J]. 2013, 32(3): 193-197, http://lib.cqvip.com/Qikan/Article/Detail?id=46252889.
[29] Yao Hongfei, Wang Xiantai, Wu Danyu, Su Yongbo, Cao Yuxiong, Ge Ji, Ning Xiaoxi, Jin Zhi. W-band push-push monolithic frequency doubler in 1-μm InP DHBT technology. JOURNAL OF SEMICONDUCTORS[J]. 2013, 34(9): 095006-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=4980035&detailType=1.
[30] 金智, 苏永波, 张毕禅, 丁芃, 汪丽丹, 周静涛, 杨成樾, 刘新宇. InP基三端太赫兹固态电子器件和电路发展. 太赫兹科学与电子信息学报[J]. 2013, 43-49, http://lib.cqvip.com/Qikan/Article/Detail?id=45152934.
[31] Shi, Yuxia, Jin, Zhi, Su, Yongbo, Cao, Yuxiong, Wang, Yan. An improved model for InP/InGaAs double heterojunction bipolar transistors. SOLID-STATE ELECTRONICS[J]. 2013, 81: 163-169, http://dx.doi.org/10.1016/j.sse.2012.10.019.
[32] Zhong YingHui, Wang XianTai, Su YongBo, Cao YuXiong, Zhang YuMing, Liu XinYu, Jin Zhi. High performance InP-based In0.52Al0.48As/In0.53Ga0.47 As HEMTs with extrinsic transconductance of 1052 mS/mm. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2013, 32(3): 193-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000321722400001.
[33] 曹玉雄, 苏永波, 吴旦昱, 金智, 王显泰, 刘新宇. 75GHz 13.92dBm InP DHBT共射共基功率放大器. 红外与毫米波学报[J]. 2012, 31(4): 294-297, http://lib.cqvip.com/Qikan/Article/Detail?id=42993491.
[34] Ge Ji, Liu HongGang, Su YongBo, Cao YuXiong, Jin Zhi. Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors. CHINESE PHYSICS B[J]. 2012, 21(5): http://lib.cqvip.com/Qikan/Article/Detail?id=41674139.
[35] Cao YuXiong, Su YongBo, Wu DanYu, Jin Zhi, Wang XianTai, Liu XinYu. A 75 GHz 13.92 dBm InP DHBT cascode power amplifier. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2012, 31(4): 294-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000309153400002.
[36] 钟英辉, 苏永波, 金智, 王显泰, 曹玉雄, 姚鸿飞, 宁晓曦, 张玉明, 刘新宇. W波段InGaAs／／InP动态二分频器. 红外与毫米波学报[J]. 2012, 31(5): 393-398, http://lib.cqvip.com/Qikan/Article/Detail?id=43700089.
[37] Huang Zhenxing, Zhou Lei, Su Yongbo, Jin Zhi. A 20-GHz ultra-high-speed InP DHBT comparator. 半导体学报[J]. 2012, 33(7): 075003-1, http://lib.cqvip.com/Qikan/Article/Detail?id=42597752.
[38] Zhong Yinghui, Wang Xiantai, Su Yongbo, Cao Yuxiong, Jin Zhi, Zhang Yuming, Liu Xinyu. Impact of the lateral width of the gate recess on the DC and RF characteristics of InAIAs/InGaAs HEMTs. JOURNAL OF SEMICONDUCTORS[J]. 2012, 33(5): 054007-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=4701859&detailType=1.
[39] Ge, Ji, Cao, Yuxiong, Wu, Danyu, Su, YongBo, Jin, Zhi, Liu, Xinyu. A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2012, 59(3): 673-679, https://www.webofscience.com/wos/woscc/full-record/WOS:000300580600020.
[40] Cao Yuxiong, Su Yongbo, Wu Danyu, Jin Zhi, Wang Xiantai, Liu Xinyu. 75GHz 13.92dBm InP DHBT共射共基功率放大器. 红外与毫米波学报[J]. 2012, 31(4): 294-297,301, http://lib.cqvip.com/Qikan/Article/Detail?id=42993491.
[41] Zhong YingHui, Su YongBo, Jin Zhi, Wang XianTai, Cao YuXiong, Yao HongFei, Ning XiaoXi, Zhang YuMing, Liu XinYu. An InGaAs/InP W-band dynamic frequency divider. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2012, 31(5): 393-398, https://www.webofscience.com/wos/woscc/full-record/WOS:000311129500003.
[42] Ge, Ji, Yao, HongFei, Wu, DanYu, Cao, YuXiong, Su, YongBo, Wang, XianTai, Ning, XiaoXi, Jin, Zhi. 5.8dBm P-1dB, high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology. ELECTRONICS LETTERS[J]. 2012, 48(24): 1543-1544, https://www.webofscience.com/wos/woscc/full-record/WOS:000314296600019.
[43] Zhong YingHui, Su YongBo, Jin Zhi, Wang XianTai, Cao YuXiong, Yao HongFei, Ning XiaoXi, Zhang YuMing, Liu XinYu. An InGaAs/InP W-band dynamic frequency divider. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2012, 31(5): 393-398, https://www.webofscience.com/wos/woscc/full-record/WOS:000311129500003.
[44] 苏永波. An InGaAsInP W-band dynamic Frequency Divider by Two. 红外与毫米波. 2012, [45] Zhong Yinghui, Wang Xiantai, Su Yongbo, Cao Yuxiong, Jin Zhi, Zhang Yuming, Liu Xinyu. An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fmax of 201 GHz. JOURNAL OF SEMICONDUCTORS[J]. 2012, 33(7): 074004-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=4701906&detailType=1.
[46] 葛霁, 刘洪刚, 苏永波, 曹玉雄, 金智. Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors. 中国物理B：英文版[J]. 2012, 21(5): 669-674, http://lib.cqvip.com/Qikan/Article/Detail?id=41674139.
[47] Su Yongbo, Jin Zhi, Cheng Wei, Ge Ji, Wang Xiantai, Chen Gaopeng, Liu Xinyu, Xu Anhuai, Qi Ming. An InGaAs/InP 40 GHz CML static frequency divider. 半导体学报[J]. 2011, 32(3): 127-130, http://lib.cqvip.com/Qikan/Article/Detail?id=36999636.
[48] SuYongbo, Jin Zhi, Cheng Wei, Ge Ji, Wang Xiantai, Chen Gaopeng, Liu Xinyu, Xu Anhuai, Qi Ming. An InGaAs/InP 40 GHz CML static frequency divider. 半导体学报[J]. 2011, 32(3): 127-130, http://lib.cqvip.com/Qikan/Article/Detail?id=36999636.
[49] 刘洪刚, 金智, 苏永波, 王显泰, 常虎东, 周磊, 刘新宇, 吴德馨. Extrinsic Base Surface Passivation in High Speed ＂Type-II＂ GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure. 中国物理快报：英文版[J]. 2010, 27(5): 261-263, http://lib.cqvip.com/Qikan/Article/Detail?id=33659481.
[50] Liu HongGang, Jin Zhi, Su YongBo, Wang XianTai, Chang HuDong, Zhou Lei, Liu XinYu, Wu DeXin. Extrinsic Base Surface Passivation in High Speed "Type-II" GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure. CHINESE PHYSICS LETTERS[J]. 2010, 27(5): http://lib.cqvip.com/Qikan/Article/Detail?id=33659481.
[51] Zhou Lei, Jin Zhi, Su Yongbo, Wang Xiantai, Chang Hudong, Xu Anhuai, Qi Ming. Ultra high-speed InP/InGaAs SHBTs with f(t) and f(max) of 185 GHz. JOURNAL OF SEMICONDUCTORS[J]. 2010, 94007-1, http://lib.cqvip.com/Qikan/Article/Detail?id=35181582.
[52] Jin, Zhi, Su, Yongbo, Chen, Jianwu, Liu, Xinyu, Wu, Dexin. Study of AlN dielectric film on graphene by Raman microscopy. APPLIED PHYSICS LETTERS[J]. 2009, 95(23): https://www.webofscience.com/wos/woscc/full-record/WOS:000272627700087.
[53] 葛霁, 金智, 苏永波, 程伟, 刘新宇, 吴德馨. 一种InP双异质结双极晶体管小信号物理模型及其提取方法. 物理学报[J]. 2009, 8584-8590, http://lib.cqvip.com/Qikan/Article/Detail?id=32512857.
[54] Su Yongbo, Jin Zhi, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming. Ultra high-speed InP/InGaAs DHBTs with ft of 203 GHz. 半导体学报[J]. 2009, 014002-1, http://lib.cqvip.com/Qikan/Article/Detail?id=29407922.
[55] 王显泰, 金智, 程伟, 苏永波, 申华军. 共基极与共发射极结构的InP DHBT器件功率特性. 半导体技术[J]. 2009, 34(8): 759-762, http://lib.cqvip.com/Qikan/Article/Detail?id=31264653.
[56] Ge Ji, Jin Zhi, Su YongBo, Cheng Wei, Wang XianTai, Chen GaoPeng, Liu XinYu. A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect. CHINESE PHYSICS LETTERS[J]. 2009, 26(7): http://lib.cqvip.com/Qikan/Article/Detail?id=30943016.
[57] 金智, 程伟, 苏永波, 刘新宇, 徐安怀, 齐鸣. High-Current Multi-Finger Mesa InGaAs/InP DHBTs. 中国物理快报：英文版[J]. 2009, 26(12): 247-249, http://lib.cqvip.com/Qikan/Article/Detail?id=32263320.
[58] 程伟, 金智, 苏永波, 刘新宇, 徐安怀, 齐鸣. Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz. 中国物理快报：英文版[J]. 2009, 26(3): 298-301, http://lib.cqvip.com/Qikan/Article/Detail?id=29591967.
[59] Cheng Wei, Jin Zhi, Su YongBo, Liu XinYu, Xu AnHuai, Qi Ming. Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz. CHINESE PHYSICS LETTERS[J]. 2009, 26(3): http://lib.cqvip.com/Qikan/Article/Detail?id=29591967.
[60] Cao Yuxiong, Jin Zhi, Ge Ji, Su Yongbo, Liu Xinyu. A symbolically defined InP double heterojunction bipolar transistor large-signal model. 半导体学报[J]. 2009, 37-41, http://lib.cqvip.com/Qikan/Article/Detail?id=32457948.
[61] 葛霁, 金智, 苏永波, 程伟, 王显泰, 陈高鹏, 刘新宇. A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect. 中国物理快报：英文版[J]. 2009, 26(7): 280-283, http://lib.cqvip.com/Qikan/Article/Detail?id=30943016.
[62] Cao Yuxiong, Jin Zhi, Ge Ji, Su Yongbo, Liu Xinyu. A symbolically defined InP double heterojunction bipolar transistor large-signal model. JOURNAL OF SEMICONDUCTORS[J]. 2009, 30(12): 37-41, http://lib.cqvip.com/Qikan/Article/Detail?id=32457948.
[63] 苏永波. Study of AlN dielectric film on grapheme by Raman microscopy. Applied Physics Letters. 2009, [64] Ge Ji, Jin Zhi, Su YongBo, Cheng Wei, Liu XinYu, Wu DeXin. A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique. ACTA PHYSICA SINICA[J]. 2009, 58(12): 8584-8590, http://dx.doi.org/10.7498/aps.58.8584.
[65] Jin Zhi, Cheng Wei, Su YongBo, Liu XinYu, Xu AnHuai, Qi Ming. High-Current Multi-Finger Mesa InGaAs/InP DHBTs. CHINESE PHYSICS LETTERS[J]. 2009, 26(12): http://lib.cqvip.com/Qikan/Article/Detail?id=32263320.
[66] Jin Zhi, Su YongBo, Cheng Wei, Liu XinYu, Xu AnHai, Qi Ming. High-breakdown-voltage submicron InGaAs/InP double heterojunction bipolar transistor with f(t)=170 GHz and f(max)=253GHz. CHINESE PHYSICS LETTERS[J]. 2008, 25(7): 2686-2689, http://lib.cqvip.com/Qikan/Article/Detail?id=27686212.
[67] 苏永波. High BreakdownVoltage Submicron InGaAsInP Double Heterojunction Bipolar Transistor with ft of 170GHz and fmax of. 中国物理快报. 2008, [68] 陈高鹏, 葛霁, 程伟, 王显泰, 苏永波, 金智, 刘新宇. W波段InP DHBT功率放大器的设计与仿真. 半导体技术[J]. 2008, 4-7, http://lib.cqvip.com/Qikan/Article/Detail?id=1004013186.
[69] Jin, Z, Su, Y, Cheng, W, Liu, X, Xu, A, Qi, M. Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with f(max) of 305 GHz. SOLID-STATE ELECTRONICS[J]. 2008, 52(11): 1825-1828, http://dx.doi.org/10.1016/j.sse.2008.09.004.
[70] 葛霁, 金智, 程伟, 苏永波, 刘新宇. 改进了渡越时间方程的InP DHBT模型. 半导体技术[J]. 2008, 12-14, http://lib.cqvip.com/Qikan/Article/Detail?id=1004013188.
[71] Jin Zhi, Su YongBo, Cheng Wei, Liu XinYu, Xu AnHuai, Qi Ming. High current multi-finger InGaAs/InP double heterojunction bipolar transistor with the maximum oscillation frequency 253 GHz. CHINESE PHYSICS LETTERS[J]. 2008, 25(8): 3075-3078, http://lib.cqvip.com/Qikan/Article/Detail?id=27934377.
[72] Jin Zhi, Su YongBo, Cheng Wei, Liu XinYu, Xu AnHuai, Qi Ming. High-speed InGaAs/InP double heterostructure bipolar transistor with high breakdown voltage. CHINESE PHYSICS LETTERS[J]. 2008, 25(7): 2683-2685, http://lib.cqvip.com/Qikan/Article/Detail?id=27686211.
[73] 金智, 苏永波, 程伟, 刘新宇, 徐安怀, 齐鸣. High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage. 中国物理快报：英文版[J]. 2008, 25(7): 2683-2685, http://lib.cqvip.com/Qikan/Article/Detail?id=27686211.
[74] 金智, 苏永波, 程伟, 刘新宇, 徐安怀, 齐鸣. High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253 GHz. 中国物理快报：英文版[J]. 2008, 25(8): 3075-3078, http://lib.cqvip.com/Qikan/Article/Detail?id=27934377.
[75] 金智, 苏永波, 程伟, 刘新宇, 徐安怀, 齐鸣. High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft=170 GHz and fmax=253 GHz. 中国物理快报：英文版[J]. 2008, 25(7): 2686-2689, http://lib.cqvip.com/Qikan/Article/Detail?id=27686212.

   

（ 1 ） 基于低频噪声机理分析的InP HBT可靠性研究, 主持, 国家级, 2014-01--2016-12
（ 2 ） InP DHB 高速AD技术研究, 主持, 国家级, 2016-09--2018-12
（ 3 ） 混频器, 主持, 国家级, 2017-09--2019-12
（ 4 ） 青促会, 主持, 部委级, 2015-01--2018-12
（ 5 ） 太赫兹三端电子器件研究, 参与, 国家级, 2010-01--2014-12
（ 6 ） InP基混频器MMIC, 参与, 国家级, 2014-09--2017-12
（ 7 ） InP HBT的超高速数字电路关键技术, 参与, 国家级, 2011-01--2015-12
（ 8 ） InP HEMT毫米波低噪声MMIC, 参与, 国家级, 2011-01--2015-12
（ 9 ） InP 3mm低噪声和功率MMIC, 参与, 国家级, 2014-01--2016-12
（ 10 ） 太赫兹HEMT器件基础研究, 参与, 国家级, 2015-01--2019-12

现指导学生

甄文祥  硕士研究生  080903-微电子学与固体电子学