Physics of Semiconductor devices and quantum devices.

   

Academician of the Chinese Academy of Sciences (since 2011);

Present, University of Chinese Academy of Sciences (UCAS) (2018.01-2023.05);

Director, Institute of Semiconductors, Chinese Academy of Sciences (2012.02-2017.12);

Deputy director, Institute of Semiconductors, Chinese Academy of Sciences (ISCAS) (2009.11 - 2012.01);

Director, State Key Laboratory of Superlattices and Microstructures, ISCAS, China (since 2008.01);

Deputy director, State Key Laboratory of Superlattices and Microstructures, ISCAS, China (1997.11-2007.12);

Professor, Institute of Semiconductors, Chinese Academy of Sciences, China (since 1997);

Post-doc, Institute of Modern Physics, Chinese Academy of Sciences, China (1996.07-1997.10);

Lecturer, Hebei Normal University, China (1989.05-1993.08);

Assistant, Hebei Normal University, China (1983.07-1986.08).

   

[1]    Lin-Ding Yuan, Shu-Shen Li, & Jun-Wei Luo*, Direct bandgap emission from strain-doped germanium, Nature Communicaiotns 15, 618 (2024).

[2]    Yang Liu, Shan Guan*, Jun-Wei Luo*, and Shu-Shen Li, Progress of Gate-Defined Semiconductor Spin Qubit: Host Materials and Device Geometries, Adv. Funct. Mater., 2304725 (2024) (invited review article).

[3]    Wen-Hao Liu, Yu-Xiang Gu, Zhi Wang, Shu-Shen Li, Lin-Wang Wang* and Jun-Wei Luo*, Origin of Immediate Damping of Coherent Oscillations in Photoinduced Charge-Density-Wave Transition, Phys. Rev. Lett. 130, 146901 (2023).

[4]    W.H. Liu, Jun-Wei Luo*, S.S. Li, L.W. Wang*, The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability, Science Advances 8, 4430 (2022).

[5]    H.W. Liu, W.H. Liu, Z.J. Suo, Z. Wang, Jun-Wei Luo*, S.S. Li, and L.W. Wang*, Unifying the order and disorder dynamics in photoexcited VO2, PNAS 119, e2122534119 (2022).

[6]    J.X. Xiong, S. Guan*, J.W. Luo*, and S.S. Li, Orientation-dependent Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum wells: Linear or cubic, Phys. Rev. B 105, 115303 (2022).

[7]    Y. Liu, J.X. Xiong, Z. Wang, W.L. Ma, S. Guan*, J.W. Luo*, and S.S. Li, Emergent linear Rashba spin-orbit coupling offers fast manipulation of hole-spin qubits in germanium, Phys. Rev. B 105, 075313 (2022).

[8]    J.X. Xiong, S. Guan*, Jun-Wei Luo*, and S.S. Li, Emergence of strong tunable linear Rashba spin-orbit coupling in two-dimensional hole gases in semiconductor quantum wells, Phys. Rev. B 103, 085309 (2021).

[9]    Jun-Wei Luo*, S.S. Li, and A. Zunger*,“Rapid transition of the hole Rashba effect from strong field dependence to saturation in semiconductor nanowires”, Phys. Rev. Lett. 119, 126401 (2017).

[10]    Jun-Wei Luo*, S.S. Li, I. Sychugov, F. Pevere, J. Linnros, and A. Zunger*, “Absence of red-shift in the direct band gap of silicon nanocrystals with reduced size”, Nature Nanotechnology 12, 930 (2017). doi:10.1038/nnano.2017.190

Prof. Shu-Shen Li has 30-year’s experience in theoretical study of fundamental physics in the low-dimensional semiconductor quantum devices and has made seminal contributions as a theorist to low-dimensional semiconductor quantum structures. He pioneered the theoretical study of coupled semiconductor quantum dots and rings, discovered the decohercence mechanism of quantum-dot based charge qubit in a vacuum, revealed the possibility of absorbing vertical incident light in semiconductor quantum dots, invented a quantum mechanical simulation for electron transport through quantum dots. He is the recipient of Chinese National Natural Science Award (2nd Class) in 2004 and in 2009, the HLHL prize for progress in science and technology. He has directed the Institute of Semiconductors, Chinese Academy of Sciences since 2011 and directed the State Key Laboratory of State Key Laboratory of Superlattices and Microstructures since 2008. As the director of the Institute, he made great success to speed up the commercialization of scientific research reflected by a 72% jump in the first year followed by other big years, making an average annual growth rate of 50%. Specifically, he signed over 130 contracts with industry, transformed more than 30 patents and as a result, gained $630 million revenue from the private sector for the institute in past three years. He has raised the Institute research funding by XX. He has co-authored several reports of National Strategic Research and Planning. He has also served on some national advisory boards for science and technology and editorial boards of several academic journals. He has led the National Basic Research Program of China and the National Innovation Research Group on Quantum Manipulation and Quantum Devices. He has mentored about 40 Ph.Ds and most of them become professors in the universities and institutes in China.

The prominent member of The Third World Academy of Sciences (TWAS);

2011, Academician of the Chinese of Academy of Sciences;

2004, National Natural Science Award (2nd Class,2nd Awardee), China;

2009, National Natural Science Award (2nd Class,1st Awardee), China;

2011, HLHL prize for progress in science and technology, China. (HLHL prize is conferred to a scientist having made great invention, discovery or achievement in natural science.)

2006-2014, PI of the National Innovation Research Group-Quantum Manipulation in Low-dimensional Semiconductor Structures;

2009-2013, PI of The National Basic Research Program of China;

2003, China National Funds for Distinguished Young Scientists;