基本信息
石芝铭 男 博导 中国科学院长春光学精密机械与物理研究所
电子邮件: shizm@ciomp.ac.cn
通信地址: 中国科学院长春光学精密机械与物理研究所,东配楼216室
邮政编码:
电子邮件: shizm@ciomp.ac.cn
通信地址: 中国科学院长春光学精密机械与物理研究所,东配楼216室
邮政编码:
招生信息
招生专业
070205-凝聚态物理
招生方向
低维纳米材料的第一性原理模拟
宽禁带半导体的理论模拟
宽禁带半导体的理论模拟
教育背景
2013-09--2015-01 Rice University 联合培养博士
2010-09--2015-06 吉林大学 博士
2010-09--2015-06 吉林大学 博士
工作经历
工作简历
2015-10~2018-02,King Abdullah University of Science and Technology, 博士后
出版信息
发表论文
[1] Yuxin Yang, Zhiming Shi, Hang Zang, Xiaobao Ma, Dashuo Fan, Jiangxiao Bai, Feng Zhang, Ke Jiang, Shunpeng Lv, Shaojuan Li, Xiaojuan Sun, Dabing Li. How do the oxygen vacancies affect the photoexcited carriers dynamics in β-Ga2O3?. MATERIALS TODAY PHYSICS. 2024, 第 2 作者40: http://dx.doi.org/10.1016/j.mtphys.2024.101328.
[2] Chen, Yang, Shi, Zhiming, Zhang, Shanli, Yue, Yuanyuan, Zang, Hang, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Sun, Xiaojuan, Li, Dabing. Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device. ACS APPLIED MATERIALS & INTERFACES[J]. 2023, 第 2 作者15(26): 31954-31965, http://dx.doi.org/10.1021/acsami.3c04213.
[3] Yang, Yuxin, Shi, Zhiming, Zhang, Shoufeng, Ma, Xiaobao, Bai, Jiangxiao, Fan, Dashuo, Zang, Hang, Sun, Xiaojuan, Li, Dabing. Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2023, 第 2 作者 通讯作者 14(29): 6719-6725, http://dx.doi.org/10.1021/acs.jpclett.3c01515.
[4] Song, Ying, Shan, Yuwei, Wang, Weiming, Chang, Kainan, Zheng, Ze, Shi, Zhiming, Li, Dabing, Cheng, Jin Luo. Second Harmonic Generation in Exfoliated Few-Layer ReS2. ADVANCED OPTICAL MATERIALS. 2023, 第 6 作者http://dx.doi.org/10.1002/adom.202300111.
[5] Hang Zang, Zhiming Shi, JianWei Ben, Ke Jiang, Shanli Zhang, Liu, Mingrui, Tong Wu, Yuping Jia, Xiaojuan Sun, Dabing Li. Growth Mechanism and Electronic Property of Stacking Mismatch Boundaries in Wurtzite III-Nitride Materials. Physical Review B[J]. 2023, 第 2 作者107: 165308,
[6] 聂子凯, 贲建伟, 张恩韬, 马晓宝, 张山丽, 石芝铭, 吕顺鹏, 蒋科, 孙晓娟, 黎大兵. 台阶聚束AlN高温热退火形貌演化研究. 人工晶体学报. 2023, 第 6 作者52(6): 1016-1024, http://lib.cqvip.com/Qikan/Article/Detail?id=7110025678.
[7] Rajan, Rahul A, Ma, Xiaobao, Li, Dabing, Shi, Zhiming, Yu, Weili, Yang, Jianjun. Inhibiting Nonradiative Recombination and Scattering Losses via Ultrafast Pulse Irradiation for Enhanced Perovskite Lasing. ACS PHOTONICS. 2023, 第 4 作者 通讯作者 http://dx.doi.org/10.1021/acsphotonics.3c00669.
[8] Chen, Yang, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Liu, Mingrui, Sun, Xiaojuan, Li, Dabing. AlGaN UV Detector with Largely Enhanced Heat Dissipation on Mo Substrate Enabled by van der Waals Epitaxy. CRYSTAL GROWTH & DESIGN[J]. 2022, 第 6 作者23: 1162-1171,
[9] Zhenyu Li, Jiefei Li, Zexuan Zheng, Kunhong Jiang, Tianrun Zheng, Dongmin Wang, Hang Wei, Zhiming Shi, Xiaotian Li, Haibin Chu. Roles of hydroxyl and oxygen vacancy of CeO_(2)·xH_(2)O in Pd-catalyzed ethanol electro-oxidation. 中国科学:化学英文版[J]. 2022, 第 8 作者65(5): 877-884, http://lib.cqvip.com/Qikan/Article/Detail?id=7107337952.
[10] Chen, Yang, Zang, Hang, Zhang, Shanli, Shi, Zhiming, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Liu, Mingrui, Li, Dabing, Sun, Xiaojuan. Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation. ACS APPLIED MATERIALS & INTERFACES[J]. 2022, 第 4 作者14(33): 37947-37957, http://dx.doi.org/10.1021/acsami.2c10039.
[11] Qi, Zhanbin, Shi, Zhiming, Zang, Hang, Ma, Xiaobao, Yang, Yuxin, Jia, Yuping, Jiang, Ke, Sun, Xiaojuan, Li, Dabing. Morphology and carrier mobility of high-B-content BxAl1-xN ternary alloys from an ab initio global search. NANOSCALE[J]. 2022, 第 2 作者 通讯作者 14(31): 11335-11342, http://dx.doi.org/10.1039/d2nr00467d.
[12] Tao Huang, Zhicheng Zhu, Chen Zhao, Wenchi Kong, Xuhang Chen, Ruiyan Li, Zhi Yu, Zhiming Shi, Dabing Li, Bai Yang, Weili Yu. Enhancing two-dimensional perovskite photodetector performance through balancing carrier density and directional transport. Journal of Materials Chemistry A[J]. 2022, 第 8 作者 通讯作者 10: 21044-21052,
[13] Zhao, XinGang, Shi, Zhiming, Wang, ***, Zou, Hongshuai, Fu, Yuhao, Zhang, Lijun. Band structure engineering through van der Waals heterostructing superlattices oftwo-dimensionaltransition metal dichalcogenides. INFOMAT[J]. 2021, 第 2 作者3(2): 201-211, https://www.webofscience.com/wos/woscc/full-record/WOS:000576372700001.
[14] Jiang, Ke, Sun, Xiaojuan, Shi, Zhiming, Zang, Hang, Ben, Jianwei, Deng, HuiXiong, Li, Dabing. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. LIGHT-SCIENCE & APPLICATIONS[J]. 2021, 第 3 作者10(1): 671-680, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=6959709&detailType=1.
[15] 隋佳恩, 贲建伟, 臧行, 蒋科, 张山丽, 郭冰亮, 陈洋, 石芝铭, 贾玉萍, 黎大兵, 孙晓娟. 高温热处理a面AlN表面形貌演变机理. 发光学报[J]. 2021, 第 8 作者42(6): 810-817, https://doi.org/10.37188/CJL.20210111.
[16] Kai, Cuihong, Zang, Hang, Ben, Jianwei, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Cao, Xingzhong, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Origination and evolution of point defects in AlN film annealed at high temperature. JOURNAL OF LUMINESCENCE[J]. 2021, 第 5 作者235: http://dx.doi.org/10.1016/j.jlumin.2021.118032.
[17] Jia, Yuping, Shen, Yutong, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detector based on metal-insulator-semiconductor structures. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2021, 第 4 作者997: http://dx.doi.org/10.1016/j.nima.2021.165166.
[18] Shi, Zhiming, Qi, Zhanbin, Zang, Hang, Jiang, Ke, Chen, Yang, Jia, Yuping, Wu, Tong, Zhang, Shanli, Sun, Xiaojuan, Li, Dabing. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission. ACS APPLIED MATERIALS AND INTERFACES[J]. 2021, 第 1 作者13(31): 37380-37387,
[19] Ben, Jianwei, Liu, Xinke, Wang, Cong, Zhang, Yupeng, Shi, Zhiming, Jia, Yuping, Zhang, Shanli, Zhang, Han, Yu, Wenjie, Li, Dabing, Sun, Xiaojuan. 2D III-Nitride Materials: Properties, Growth, and Applications. ADVANCED MATERIALS. 2021, 第 5 作者33(27): http://dx.doi.org/10.1002/adma.202006761.
[20] Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detectors due to optimized ohmic contact electrode by graphene insertion. DIAMOND AND RELATED MATERIALS[J]. 2021, 第 3 作者115: http://dx.doi.org/10.1016/j.diamond.2021.108355.
[21] Chen, Yang, Jiang, Ke, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Li, Dabing, Sun, Xiaojuan. Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector. CARBON[J]. 2021, 第 6 作者175: 155-163, http://dx.doi.org/10.1016/j.carbon.2020.12.055.
[22] Jiang, Ke, Sun, Xiaojuan, Chen, Yuxuan, Zhang, Shanli, Ben, Jianwei, Chen, Yang, Zhang, ZiHui, Jia, Yuping, Shi, Zhiming, Li, Dabing. Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer. APPLIED PHYSICS LETTERS[J]. 2021, 第 9 作者119(16):
[23] Li, Zhenyu, Li, Jiefei, Jiang, Kunhong, Yuan, Songyuan, Yu, Dangkai, Wei, Hang, Shi, Zhiming, Li, Xiaotian, Chu, Haibin. PdCoNi alloy nanoparticles decorated, nitrogen-doped carbon nanotubes for highly active and durable oxygen reduction electrocatalysis. CHEMICAL ENGINEERING JOURNAL[J]. 2021, 第 7 作者 通讯作者 411: http://dx.doi.org/10.1016/j.cej.2021.128527.
[24] Chen, Yang, Wu, You, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Zhang, Shanli, Zang, Hang, Shi, Zhiming, Duan, Bin, Sun, Xiaojuan, Li, Dabing. A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 第 8 作者868: 159281, http://dx.doi.org/10.1016/j.jallcom.2021.159281.
[25] Kai, Cuihong, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Ben, Jianwei, Wu, You, Wang, Yong, Li, Dabing. Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2020, 第 5 作者53(23):
[26] Hou, Wantong, Qi, Zhanbin, Zang, Hang, Yan, Yan, Shi, Zhiming. Thickness and strain engineering of structural and electronic properties for 2D square-octagon AlN. INTERNATIONAL JOURNAL OF SMART AND NANO MATERIALS[J]. 2020, 第 5 作者 通讯作者 11(3): 288-297, http://lib.cqvip.com/Qikan/Article/Detail?id=7108157897.
[27] Chen, Yang, Jia, YuPing, Shi, ZhiMing, Sun, XiaoJuan, Li, DaBing. Van der Waals Epitaxy: A new way for growth of III-nitrides. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2020, 第 3 作者63(3): 528-530, https://www.webofscience.com/wos/woscc/full-record/WOS:000499958400001.
[28] Jia, Yuping, Shi, Zhiming, Hou, Wantong, Zang, Hang, Jiang, Ke, Chen, Yang, Zhang, Shanli, Qi, Zhanbin, Wu, Tong, Sun, Xiaojuan, Li, Dabing. Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors. NPJ 2D MATERIALS AND APPLICATIONS[J]. 2020, 第 2 作者 通讯作者 4(1): https://doaj.org/article/ef6627badb1d40bf9af2c56ce4c8aaaa.
[29] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Wu, Tong, Lu, Wei, Li, Dabing. Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN. APPLIED SURFACE SCIENCE[J]. 2020, 第 4 作者520: 146369, http://dx.doi.org/10.1016/j.apsusc.2020.146369.
[30] 贲建伟, 孙晓娟, 蒋科, 陈洋, 石芝铭, 臧行, 张山丽, 黎大兵, 吕威. AlGaN基宽禁带半导体光电材料与器件. 人工晶体学报[J]. 2020, 第 5 作者49(11): 2046-2067, http://lib.cqvip.com/Qikan/Article/Detail?id=7103518501.
[31] Jiang, Ke, Sun, Xiaojuan, Zhang, ZiHui, Ben, Jianwei, Che, Jiamang, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Lv, Wei, Li, Dabing. Polarization-enhanced AlGaN solar-blind ultraviolet detectors. PHOTONICS RESEARCH[J]. 2020, 第 6 作者8(7): 1243-1252, http://lib.cqvip.com/Qikan/Article/Detail?id=7102618646.
[32] Ben, Jianwei, Shi, Zhiming, Zang, Hang, Sun, Xiaojuan, Liu, Xinke, Lu, Wei, Li, Dabing. The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing. APPLIED PHYSICS LETTERS[J]. 2020, 第 2 作者116(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000543514800001.
[33] Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy. APPLIED PHYSICS LETTERS[J]. 2020, 第 6 作者117(5): 051601, https://www.webofscience.com/wos/woscc/full-record/WOS:000559329700001.
[34] Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020). APPLIED PHYSICS LETTERS. 2020, 第 6 作者117(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000568861700001.
[35] Kai Cuihong, Sun Xiaojuan, Jia Yuping, Shi Zhiming, Jiang Ke, Ben Jianwei, Wu You, Wang Yong, Liu Henan, Li Xiaohang, Li Dabing. Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy. SCIENCE CHINA. PHYSICS, MECHANICS & ASTRONOMY[J]. 2019, 第 4 作者62(6): https://www.sciengine.com/doi/10.1007/s11433-018-9320-x.
[36] Wu, You, Li, Zhiwen, Ang, KahWee, Jia, Yuping, Shi, Zhiming, Huang, Zhi, Yu, Wenjie, Sun, Xiaojuan, Liu, Xinke, Li, Dabing. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors. PHOTONICS RESEARCH[J]. 2019, 第 5 作者7(10): 1127-1133, https://www.webofscience.com/wos/woscc/full-record/WOS:000488619700003.
[37] Chen, Yuxuan, Li, Kuilong, Li, Zhiwen, Hu, Shengqun, Sun, Xiaojuan, Shi, Zhiming, Liu, Xinke, Li, Dabing. Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 第 6 作者797: 262-268, http://dx.doi.org/10.1016/j.jallcom.2019.05.115.
[38] ZShi, ZCao, XSun, YJia, DLi, LCavallo, USchwingenschlogl. Uncovering the Mechanism Behind the Improved Stability of 2D OrganicInorganic Hybrid Perovskites. SMALL[J]. 2019, 15(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000467263300012.
[39] Shi Zhiming, Sun Xiaojuan, Jia Yuping, Liu Xinke, Zhang Shanli, Qi Zhanbin, Li Dabing. Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles. SCIENCE CHINA. PHYSICS, MECHANICS & ASTRONOMY[J]. 2019, 第 1 作者62(12): 7, https://www.sciengine.com/doi/10.1007/s11433-019-1448-3.
[40] 余恒炜, 孙晓娟, 王星辰, 蒋科, 吴忧, 程东碧, 石芝铭, 贾玉萍, 黎大兵. 量子随机数高斯噪声信号发生器. 光学精密工程[J]. 2019, 第 7 作者27(7): 1492-1499, http://lib.cqvip.com/Qikan/Article/Detail?id=7002697587.
[41] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Wu, You, Kai, Cuihong, Wang, Yong, Li, Dabing. Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps. CRYSTENGCOMM[J]. 2019, 第 4 作者21(33): 4864-4873, https://www.webofscience.com/wos/woscc/full-record/WOS:000481891000020.
[42] Jianwei Ben, Xiaojuan Sun, Yuping Jia, Ke Jiang, Zhiming Shi, You Wu, Cuihong Kai, Yong Wang, Xuguang Luo, Zhe Chuan Feng, Dabing Li. Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field. NANOSCALE RESEARCH LETTERS[J]. 2019, 第 5 作者14(1): 1-7, http://dx.doi.org/10.1186/s11671-019-3018-7.
[43] ZhiMing Shi, XiaoJuan Sun, YuPing Jia, XinKe Liu, ShanLi Zhang, ZhanBin Qi, DaBing Li. Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles. 中国科学:物理学、力学、天文学英文版[J]. 2019, 第 1 作者62(12): 89-95, http://lib.cqvip.com/Qikan/Article/Detail?id=7100270254.
[44] Liu, Xinke, Li, Kuilong, Sun, Xiaojuan, Shi, Zhiming, Huang, Zhonghui, Li, Zhiwen, Min, Long, Botcha, Venkatadivakar, Chen, Xingyuan, Xu, Xiangfu, Li, Dabing. Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 第 4 作者793: 599-603, http://dx.doi.org/10.1016/j.jallcom.2019.04.227.
[45] Ben, Jianwei, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Liu, Henan, Wang, Yong, Kai, Cuihong, Wu, You, Li, Dabing. Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing. CRYSTENGCOMM[J]. 2018, 第 5 作者20(32): 4623-4629, https://www.webofscience.com/wos/woscc/full-record/WOS:000442612000013.
[46] Shi, Zhiming, Zhang, Qingyun, Schwingenschlogl, Udo. Alloying as a Route to Monolayer Transition Metal Dichalcogenides with Improved Optoelectronic Performance: Mo(S1-xSex)(2) and Mo1-yWyS2. ACS APPLIED ENERGY MATERIALS[J]. 2018, 第 1 作者1(5): 2208-+, http://dx.doi.org/10.1021/acsaem.8b00288.
[47] Shi, Zhiming, Wang, ***, Sun, Yuanhui, Li, Yawen, Zhang, Lijun. Interlayer coupling in two-dimensional semiconductor materials. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2018, 第 1 作者33(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000442339000001.
[48] Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Liu, Henan, Ben, Jianwei, Li, Dabing. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC. SMALL[J]. 2018, 第 3 作者14(26): https://www.webofscience.com/wos/woscc/full-record/WOS:000436408800015.
[49] Shi, Zhiming, Schwingenschlogl, Udo. Interaction of Monovacancies in Graphene. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2017, 第 1 作者121(4): 2459-2465, https://www.webofscience.com/wos/woscc/full-record/WOS:000393443200049.
[50] Shi, Zhiming, Kutana, Alex, Yu, Guangtao, Chen, Wei, Yakobson, Boris I, Schwingenschlogl, Udo, Huang, Xuri. Tailoring the Electronic and Magnetic Properties of Two-Dimensional Silicon Carbide Sheets and Ribbons by Fluorination. JOURNALOFPHYSICALCHEMISTRYC[J]. 2016, 第 1 作者120(28): 15407-15414, https://www.webofscience.com/wos/woscc/full-record/WOS:000380590600048.
[51] Shi, Zhiming, Kutana, Alex, Yakobson, Boris I. How Much N-Doping Can Graphene Sustain?. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2015, 第 1 作者6(1): 106-112, http://dx.doi.org/10.1021/jz502093c.
[52] Shi, Zhiming, Zhang, Zhuhua, Kutana, Alex, Yakobson, Boris I. Predicting Two-Dimensional Silicon Carbide Mono layers. ACS NANO[J]. 2015, 第 1 作者9(10): 9802-9809, https://www.webofscience.com/wos/woscc/full-record/WOS:000363915300035.
[53] Zou, Xiaolong, Liu, Mingjie, Shi, Zhiming, Yakobson, Boris I. Environment-Controlled Dislocation Migration and Superplasticity in Monolayer MoS2. NANO LETTERS[J]. 2015, 第 3 作者15(5): 3495-3500, https://www.webofscience.com/wos/woscc/full-record/WOS:000354906000107.
[54] Shi, Zhiming, Zhao, Xingang, Huang, Xuri. First principles investigation on the stability, magnetic and electronic properties of the fully and partially hydrogenated BN nanoribbons in different conformers. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2013, 第 1 作者1(41): 6890-6898, https://www.webofscience.com/wos/woscc/full-record/WOS:000325763600022.
[55] Guan, Jia, Chen, Wei, Li, Yafei, Yu, Guangtao, Shi, Zhiming, Huang, Xuri, Sun, Chiachung, Chen, Zhongfang. An Effective Approach to Achieve a Spin Gapless SemiconductorHalf-MetalMetal Transition in Zigzag Graphene Nanoribbons: Attaching A Floating Induced Dipole Field via Interactions. ADVANCED FUNCTIONAL MATERIALS[J]. 2013, 第 5 作者23(12): 1507-1518, https://www.webofscience.com/wos/woscc/full-record/WOS:000316321800005.
[56] 石芝铭, 陈巍, 万素琴, 李辉, 黄旭日. 杂原子掺杂的含单空位缺陷BN纳米管的非线性光学性质. 高等学校化学学报[J]. 2013, 第 1 作者34(2): 441-446, http://lib.cqvip.com/Qikan/Article/Detail?id=44726471.
[57] Yang Chen, Ke Jiang, Hang Zang, Jianwei Ben, Shanli Zhang, Zhiming Shi, Yuping Jia, Wei L, Dabing Li, Xiaojuan Sun. In situ growth of high-quality wafer-scale graphene on dielectric substrate for high-responsivity ultraviolet photodetector. CARBON. 第 6 作者http://dx.doi.org/10.1016/j.carbon.2020.12.055.
[2] Chen, Yang, Shi, Zhiming, Zhang, Shanli, Yue, Yuanyuan, Zang, Hang, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Sun, Xiaojuan, Li, Dabing. Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device. ACS APPLIED MATERIALS & INTERFACES[J]. 2023, 第 2 作者15(26): 31954-31965, http://dx.doi.org/10.1021/acsami.3c04213.
[3] Yang, Yuxin, Shi, Zhiming, Zhang, Shoufeng, Ma, Xiaobao, Bai, Jiangxiao, Fan, Dashuo, Zang, Hang, Sun, Xiaojuan, Li, Dabing. Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2023, 第 2 作者 通讯作者 14(29): 6719-6725, http://dx.doi.org/10.1021/acs.jpclett.3c01515.
[4] Song, Ying, Shan, Yuwei, Wang, Weiming, Chang, Kainan, Zheng, Ze, Shi, Zhiming, Li, Dabing, Cheng, Jin Luo. Second Harmonic Generation in Exfoliated Few-Layer ReS2. ADVANCED OPTICAL MATERIALS. 2023, 第 6 作者http://dx.doi.org/10.1002/adom.202300111.
[5] Hang Zang, Zhiming Shi, JianWei Ben, Ke Jiang, Shanli Zhang, Liu, Mingrui, Tong Wu, Yuping Jia, Xiaojuan Sun, Dabing Li. Growth Mechanism and Electronic Property of Stacking Mismatch Boundaries in Wurtzite III-Nitride Materials. Physical Review B[J]. 2023, 第 2 作者107: 165308,
[6] 聂子凯, 贲建伟, 张恩韬, 马晓宝, 张山丽, 石芝铭, 吕顺鹏, 蒋科, 孙晓娟, 黎大兵. 台阶聚束AlN高温热退火形貌演化研究. 人工晶体学报. 2023, 第 6 作者52(6): 1016-1024, http://lib.cqvip.com/Qikan/Article/Detail?id=7110025678.
[7] Rajan, Rahul A, Ma, Xiaobao, Li, Dabing, Shi, Zhiming, Yu, Weili, Yang, Jianjun. Inhibiting Nonradiative Recombination and Scattering Losses via Ultrafast Pulse Irradiation for Enhanced Perovskite Lasing. ACS PHOTONICS. 2023, 第 4 作者 通讯作者 http://dx.doi.org/10.1021/acsphotonics.3c00669.
[8] Chen, Yang, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Liu, Mingrui, Sun, Xiaojuan, Li, Dabing. AlGaN UV Detector with Largely Enhanced Heat Dissipation on Mo Substrate Enabled by van der Waals Epitaxy. CRYSTAL GROWTH & DESIGN[J]. 2022, 第 6 作者23: 1162-1171,
[9] Zhenyu Li, Jiefei Li, Zexuan Zheng, Kunhong Jiang, Tianrun Zheng, Dongmin Wang, Hang Wei, Zhiming Shi, Xiaotian Li, Haibin Chu. Roles of hydroxyl and oxygen vacancy of CeO_(2)·xH_(2)O in Pd-catalyzed ethanol electro-oxidation. 中国科学:化学英文版[J]. 2022, 第 8 作者65(5): 877-884, http://lib.cqvip.com/Qikan/Article/Detail?id=7107337952.
[10] Chen, Yang, Zang, Hang, Zhang, Shanli, Shi, Zhiming, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Liu, Mingrui, Li, Dabing, Sun, Xiaojuan. Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation. ACS APPLIED MATERIALS & INTERFACES[J]. 2022, 第 4 作者14(33): 37947-37957, http://dx.doi.org/10.1021/acsami.2c10039.
[11] Qi, Zhanbin, Shi, Zhiming, Zang, Hang, Ma, Xiaobao, Yang, Yuxin, Jia, Yuping, Jiang, Ke, Sun, Xiaojuan, Li, Dabing. Morphology and carrier mobility of high-B-content BxAl1-xN ternary alloys from an ab initio global search. NANOSCALE[J]. 2022, 第 2 作者 通讯作者 14(31): 11335-11342, http://dx.doi.org/10.1039/d2nr00467d.
[12] Tao Huang, Zhicheng Zhu, Chen Zhao, Wenchi Kong, Xuhang Chen, Ruiyan Li, Zhi Yu, Zhiming Shi, Dabing Li, Bai Yang, Weili Yu. Enhancing two-dimensional perovskite photodetector performance through balancing carrier density and directional transport. Journal of Materials Chemistry A[J]. 2022, 第 8 作者 通讯作者 10: 21044-21052,
[13] Zhao, XinGang, Shi, Zhiming, Wang, ***, Zou, Hongshuai, Fu, Yuhao, Zhang, Lijun. Band structure engineering through van der Waals heterostructing superlattices oftwo-dimensionaltransition metal dichalcogenides. INFOMAT[J]. 2021, 第 2 作者3(2): 201-211, https://www.webofscience.com/wos/woscc/full-record/WOS:000576372700001.
[14] Jiang, Ke, Sun, Xiaojuan, Shi, Zhiming, Zang, Hang, Ben, Jianwei, Deng, HuiXiong, Li, Dabing. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. LIGHT-SCIENCE & APPLICATIONS[J]. 2021, 第 3 作者10(1): 671-680, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=6959709&detailType=1.
[15] 隋佳恩, 贲建伟, 臧行, 蒋科, 张山丽, 郭冰亮, 陈洋, 石芝铭, 贾玉萍, 黎大兵, 孙晓娟. 高温热处理a面AlN表面形貌演变机理. 发光学报[J]. 2021, 第 8 作者42(6): 810-817, https://doi.org/10.37188/CJL.20210111.
[16] Kai, Cuihong, Zang, Hang, Ben, Jianwei, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Cao, Xingzhong, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Origination and evolution of point defects in AlN film annealed at high temperature. JOURNAL OF LUMINESCENCE[J]. 2021, 第 5 作者235: http://dx.doi.org/10.1016/j.jlumin.2021.118032.
[17] Jia, Yuping, Shen, Yutong, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detector based on metal-insulator-semiconductor structures. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2021, 第 4 作者997: http://dx.doi.org/10.1016/j.nima.2021.165166.
[18] Shi, Zhiming, Qi, Zhanbin, Zang, Hang, Jiang, Ke, Chen, Yang, Jia, Yuping, Wu, Tong, Zhang, Shanli, Sun, Xiaojuan, Li, Dabing. Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission. ACS APPLIED MATERIALS AND INTERFACES[J]. 2021, 第 1 作者13(31): 37380-37387,
[19] Ben, Jianwei, Liu, Xinke, Wang, Cong, Zhang, Yupeng, Shi, Zhiming, Jia, Yuping, Zhang, Shanli, Zhang, Han, Yu, Wenjie, Li, Dabing, Sun, Xiaojuan. 2D III-Nitride Materials: Properties, Growth, and Applications. ADVANCED MATERIALS. 2021, 第 5 作者33(27): http://dx.doi.org/10.1002/adma.202006761.
[20] Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detectors due to optimized ohmic contact electrode by graphene insertion. DIAMOND AND RELATED MATERIALS[J]. 2021, 第 3 作者115: http://dx.doi.org/10.1016/j.diamond.2021.108355.
[21] Chen, Yang, Jiang, Ke, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Li, Dabing, Sun, Xiaojuan. Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector. CARBON[J]. 2021, 第 6 作者175: 155-163, http://dx.doi.org/10.1016/j.carbon.2020.12.055.
[22] Jiang, Ke, Sun, Xiaojuan, Chen, Yuxuan, Zhang, Shanli, Ben, Jianwei, Chen, Yang, Zhang, ZiHui, Jia, Yuping, Shi, Zhiming, Li, Dabing. Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer. APPLIED PHYSICS LETTERS[J]. 2021, 第 9 作者119(16):
[23] Li, Zhenyu, Li, Jiefei, Jiang, Kunhong, Yuan, Songyuan, Yu, Dangkai, Wei, Hang, Shi, Zhiming, Li, Xiaotian, Chu, Haibin. PdCoNi alloy nanoparticles decorated, nitrogen-doped carbon nanotubes for highly active and durable oxygen reduction electrocatalysis. CHEMICAL ENGINEERING JOURNAL[J]. 2021, 第 7 作者 通讯作者 411: http://dx.doi.org/10.1016/j.cej.2021.128527.
[24] Chen, Yang, Wu, You, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Zhang, Shanli, Zang, Hang, Shi, Zhiming, Duan, Bin, Sun, Xiaojuan, Li, Dabing. A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 第 8 作者868: 159281, http://dx.doi.org/10.1016/j.jallcom.2021.159281.
[25] Kai, Cuihong, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Ben, Jianwei, Wu, You, Wang, Yong, Li, Dabing. Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2020, 第 5 作者53(23):
[26] Hou, Wantong, Qi, Zhanbin, Zang, Hang, Yan, Yan, Shi, Zhiming. Thickness and strain engineering of structural and electronic properties for 2D square-octagon AlN. INTERNATIONAL JOURNAL OF SMART AND NANO MATERIALS[J]. 2020, 第 5 作者 通讯作者 11(3): 288-297, http://lib.cqvip.com/Qikan/Article/Detail?id=7108157897.
[27] Chen, Yang, Jia, YuPing, Shi, ZhiMing, Sun, XiaoJuan, Li, DaBing. Van der Waals Epitaxy: A new way for growth of III-nitrides. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2020, 第 3 作者63(3): 528-530, https://www.webofscience.com/wos/woscc/full-record/WOS:000499958400001.
[28] Jia, Yuping, Shi, Zhiming, Hou, Wantong, Zang, Hang, Jiang, Ke, Chen, Yang, Zhang, Shanli, Qi, Zhanbin, Wu, Tong, Sun, Xiaojuan, Li, Dabing. Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors. NPJ 2D MATERIALS AND APPLICATIONS[J]. 2020, 第 2 作者 通讯作者 4(1): https://doaj.org/article/ef6627badb1d40bf9af2c56ce4c8aaaa.
[29] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Wu, Tong, Lu, Wei, Li, Dabing. Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN. APPLIED SURFACE SCIENCE[J]. 2020, 第 4 作者520: 146369, http://dx.doi.org/10.1016/j.apsusc.2020.146369.
[30] 贲建伟, 孙晓娟, 蒋科, 陈洋, 石芝铭, 臧行, 张山丽, 黎大兵, 吕威. AlGaN基宽禁带半导体光电材料与器件. 人工晶体学报[J]. 2020, 第 5 作者49(11): 2046-2067, http://lib.cqvip.com/Qikan/Article/Detail?id=7103518501.
[31] Jiang, Ke, Sun, Xiaojuan, Zhang, ZiHui, Ben, Jianwei, Che, Jiamang, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Lv, Wei, Li, Dabing. Polarization-enhanced AlGaN solar-blind ultraviolet detectors. PHOTONICS RESEARCH[J]. 2020, 第 6 作者8(7): 1243-1252, http://lib.cqvip.com/Qikan/Article/Detail?id=7102618646.
[32] Ben, Jianwei, Shi, Zhiming, Zang, Hang, Sun, Xiaojuan, Liu, Xinke, Lu, Wei, Li, Dabing. The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing. APPLIED PHYSICS LETTERS[J]. 2020, 第 2 作者116(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000543514800001.
[33] Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy. APPLIED PHYSICS LETTERS[J]. 2020, 第 6 作者117(5): 051601, https://www.webofscience.com/wos/woscc/full-record/WOS:000559329700001.
[34] Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020). APPLIED PHYSICS LETTERS. 2020, 第 6 作者117(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000568861700001.
[35] Kai Cuihong, Sun Xiaojuan, Jia Yuping, Shi Zhiming, Jiang Ke, Ben Jianwei, Wu You, Wang Yong, Liu Henan, Li Xiaohang, Li Dabing. Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy. SCIENCE CHINA. PHYSICS, MECHANICS & ASTRONOMY[J]. 2019, 第 4 作者62(6): https://www.sciengine.com/doi/10.1007/s11433-018-9320-x.
[36] Wu, You, Li, Zhiwen, Ang, KahWee, Jia, Yuping, Shi, Zhiming, Huang, Zhi, Yu, Wenjie, Sun, Xiaojuan, Liu, Xinke, Li, Dabing. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors. PHOTONICS RESEARCH[J]. 2019, 第 5 作者7(10): 1127-1133, https://www.webofscience.com/wos/woscc/full-record/WOS:000488619700003.
[37] Chen, Yuxuan, Li, Kuilong, Li, Zhiwen, Hu, Shengqun, Sun, Xiaojuan, Shi, Zhiming, Liu, Xinke, Li, Dabing. Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 第 6 作者797: 262-268, http://dx.doi.org/10.1016/j.jallcom.2019.05.115.
[38] ZShi, ZCao, XSun, YJia, DLi, LCavallo, USchwingenschlogl. Uncovering the Mechanism Behind the Improved Stability of 2D OrganicInorganic Hybrid Perovskites. SMALL[J]. 2019, 15(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000467263300012.
[39] Shi Zhiming, Sun Xiaojuan, Jia Yuping, Liu Xinke, Zhang Shanli, Qi Zhanbin, Li Dabing. Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles. SCIENCE CHINA. PHYSICS, MECHANICS & ASTRONOMY[J]. 2019, 第 1 作者62(12): 7, https://www.sciengine.com/doi/10.1007/s11433-019-1448-3.
[40] 余恒炜, 孙晓娟, 王星辰, 蒋科, 吴忧, 程东碧, 石芝铭, 贾玉萍, 黎大兵. 量子随机数高斯噪声信号发生器. 光学精密工程[J]. 2019, 第 7 作者27(7): 1492-1499, http://lib.cqvip.com/Qikan/Article/Detail?id=7002697587.
[41] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Wu, You, Kai, Cuihong, Wang, Yong, Li, Dabing. Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps. CRYSTENGCOMM[J]. 2019, 第 4 作者21(33): 4864-4873, https://www.webofscience.com/wos/woscc/full-record/WOS:000481891000020.
[42] Jianwei Ben, Xiaojuan Sun, Yuping Jia, Ke Jiang, Zhiming Shi, You Wu, Cuihong Kai, Yong Wang, Xuguang Luo, Zhe Chuan Feng, Dabing Li. Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field. NANOSCALE RESEARCH LETTERS[J]. 2019, 第 5 作者14(1): 1-7, http://dx.doi.org/10.1186/s11671-019-3018-7.
[43] ZhiMing Shi, XiaoJuan Sun, YuPing Jia, XinKe Liu, ShanLi Zhang, ZhanBin Qi, DaBing Li. Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles. 中国科学:物理学、力学、天文学英文版[J]. 2019, 第 1 作者62(12): 89-95, http://lib.cqvip.com/Qikan/Article/Detail?id=7100270254.
[44] Liu, Xinke, Li, Kuilong, Sun, Xiaojuan, Shi, Zhiming, Huang, Zhonghui, Li, Zhiwen, Min, Long, Botcha, Venkatadivakar, Chen, Xingyuan, Xu, Xiangfu, Li, Dabing. Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 第 4 作者793: 599-603, http://dx.doi.org/10.1016/j.jallcom.2019.04.227.
[45] Ben, Jianwei, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Liu, Henan, Wang, Yong, Kai, Cuihong, Wu, You, Li, Dabing. Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing. CRYSTENGCOMM[J]. 2018, 第 5 作者20(32): 4623-4629, https://www.webofscience.com/wos/woscc/full-record/WOS:000442612000013.
[46] Shi, Zhiming, Zhang, Qingyun, Schwingenschlogl, Udo. Alloying as a Route to Monolayer Transition Metal Dichalcogenides with Improved Optoelectronic Performance: Mo(S1-xSex)(2) and Mo1-yWyS2. ACS APPLIED ENERGY MATERIALS[J]. 2018, 第 1 作者1(5): 2208-+, http://dx.doi.org/10.1021/acsaem.8b00288.
[47] Shi, Zhiming, Wang, ***, Sun, Yuanhui, Li, Yawen, Zhang, Lijun. Interlayer coupling in two-dimensional semiconductor materials. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2018, 第 1 作者33(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000442339000001.
[48] Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Liu, Henan, Ben, Jianwei, Li, Dabing. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC. SMALL[J]. 2018, 第 3 作者14(26): https://www.webofscience.com/wos/woscc/full-record/WOS:000436408800015.
[49] Shi, Zhiming, Schwingenschlogl, Udo. Interaction of Monovacancies in Graphene. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2017, 第 1 作者121(4): 2459-2465, https://www.webofscience.com/wos/woscc/full-record/WOS:000393443200049.
[50] Shi, Zhiming, Kutana, Alex, Yu, Guangtao, Chen, Wei, Yakobson, Boris I, Schwingenschlogl, Udo, Huang, Xuri. Tailoring the Electronic and Magnetic Properties of Two-Dimensional Silicon Carbide Sheets and Ribbons by Fluorination. JOURNALOFPHYSICALCHEMISTRYC[J]. 2016, 第 1 作者120(28): 15407-15414, https://www.webofscience.com/wos/woscc/full-record/WOS:000380590600048.
[51] Shi, Zhiming, Kutana, Alex, Yakobson, Boris I. How Much N-Doping Can Graphene Sustain?. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2015, 第 1 作者6(1): 106-112, http://dx.doi.org/10.1021/jz502093c.
[52] Shi, Zhiming, Zhang, Zhuhua, Kutana, Alex, Yakobson, Boris I. Predicting Two-Dimensional Silicon Carbide Mono layers. ACS NANO[J]. 2015, 第 1 作者9(10): 9802-9809, https://www.webofscience.com/wos/woscc/full-record/WOS:000363915300035.
[53] Zou, Xiaolong, Liu, Mingjie, Shi, Zhiming, Yakobson, Boris I. Environment-Controlled Dislocation Migration and Superplasticity in Monolayer MoS2. NANO LETTERS[J]. 2015, 第 3 作者15(5): 3495-3500, https://www.webofscience.com/wos/woscc/full-record/WOS:000354906000107.
[54] Shi, Zhiming, Zhao, Xingang, Huang, Xuri. First principles investigation on the stability, magnetic and electronic properties of the fully and partially hydrogenated BN nanoribbons in different conformers. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2013, 第 1 作者1(41): 6890-6898, https://www.webofscience.com/wos/woscc/full-record/WOS:000325763600022.
[55] Guan, Jia, Chen, Wei, Li, Yafei, Yu, Guangtao, Shi, Zhiming, Huang, Xuri, Sun, Chiachung, Chen, Zhongfang. An Effective Approach to Achieve a Spin Gapless SemiconductorHalf-MetalMetal Transition in Zigzag Graphene Nanoribbons: Attaching A Floating Induced Dipole Field via Interactions. ADVANCED FUNCTIONAL MATERIALS[J]. 2013, 第 5 作者23(12): 1507-1518, https://www.webofscience.com/wos/woscc/full-record/WOS:000316321800005.
[56] 石芝铭, 陈巍, 万素琴, 李辉, 黄旭日. 杂原子掺杂的含单空位缺陷BN纳米管的非线性光学性质. 高等学校化学学报[J]. 2013, 第 1 作者34(2): 441-446, http://lib.cqvip.com/Qikan/Article/Detail?id=44726471.
[57] Yang Chen, Ke Jiang, Hang Zang, Jianwei Ben, Shanli Zhang, Zhiming Shi, Yuping Jia, Wei L, Dabing Li, Xiaojuan Sun. In situ growth of high-quality wafer-scale graphene on dielectric substrate for high-responsivity ultraviolet photodetector. CARBON. 第 6 作者http://dx.doi.org/10.1016/j.carbon.2020.12.055.
科研活动
科研项目
( 1 ) 二维AlGaN的外延生长及物性研究, 主持, 国家级, 2019-01--2021-12
( 2 ) 大功率氮化镓绿光激光器的材料生长与物理机制, 参与, 国家级, 2019-01--2023-12
( 3 ) AlGaN材料的外延生长及物性研究, 主持, 部委级, 2018-02--2021-02
( 2 ) 大功率氮化镓绿光激光器的材料生长与物理机制, 参与, 国家级, 2019-01--2023-12
( 3 ) AlGaN材料的外延生长及物性研究, 主持, 部委级, 2018-02--2021-02
参与会议
(1)低维氮化硼带隙调控的 第一性原理研究 第十五届全国MOCVD学术会议 2018-08-23
指导学生
现指导学生
齐占斌 博士研究生 070205-凝聚态物理