基本信息
石芝铭  男  博导  中国科学院长春光学精密机械与物理研究所
电子邮件: shizm@ciomp.ac.cn
通信地址: 中国科学院长春光学精密机械与物理研究所,东配楼216室
邮政编码:

招生信息

   
招生专业
070205-凝聚态物理
招生方向
低维纳米材料的第一性原理模拟
宽禁带半导体的理论模拟

教育背景

2013-09--2015-01   Rice University   联合培养博士
2010-09--2015-06   吉林大学   博士

工作经历

   
工作简历
2015-10~2018-02,King Abdullah University of Science and Technology, 博士后

出版信息

   
发表论文
[1] Ke Jiang, Xiaojuan Sun, Zhiming Shi, Hang Zang, Jianwei Ben, HuiXiong Deng, Dabing Li. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. LIGHT-SCIENCE & APPLICATIONS[J]. 2021, 10(1): 671-680, https://doaj.org/article/140e562a6c814998ba3234b10cd8dd3d.
[2] Kai, Cuihong, Zang, Hang, Ben, Jianwei, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Cao, Xingzhong, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Origination and evolution of point defects in AlN film annealed at high temperature. JOURNAL OF LUMINESCENCE[J]. 2021, 235: http://dx.doi.org/10.1016/j.jlumin.2021.118032.
[3] Jia, Yuping, Shen, Yutong, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detector based on metal-insulator-semiconductor structures. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT[J]. 2021, 997: http://dx.doi.org/10.1016/j.nima.2021.165166.
[4] Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Wu, Tong, Liang, Hongwei, Cui, Xingzhu, Lu, Wei, Li, Dabing. Improved performance of SiC radiation detectors due to optimized ohmic contact electrode by graphene insertion. DIAMOND AND RELATED MATERIALS[J]. 2021, 115: http://dx.doi.org/10.1016/j.diamond.2021.108355.
[5] Chen, Yang, Jiang, Ke, Zang, Hang, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Li, Dabing, Sun, Xiaojuan. Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector. CARBON[J]. 2021, 175: 155-163, http://dx.doi.org/10.1016/j.carbon.2020.12.055.
[6] Chen, Yang, Wu, You, Ben, Jianwei, Jiang, Ke, Jia, Yuping, Zhang, Shanli, Zang, Hang, Shi, Zhiming, Duan, Bin, Sun, Xiaojuan, Li, Dabing. A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 868: http://dx.doi.org/10.1016/j.jallcom.2021.159281.
[7] Kai, Cuihong, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Ben, Jianwei, Wu, You, Wang, Yong, Li, Dabing. Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2020, 53(23): [8] Chen, Yang, Jia, YuPing, Shi, ZhiMing, Sun, XiaoJuan, Li, DaBing. Van der Waals Epitaxy: A new way for growth of III-nitrides. SCIENCE CHINA-TECHNOLOGICAL SCIENCES. 2020, 63(3): 528-530, https://www.webofscience.com/wos/woscc/full-record/WOS:000499958400001.
[9] Jia, Yuping, Shi, Zhiming, Hou, Wantong, Zang, Hang, Jiang, Ke, Chen, Yang, Zhang, Shanli, Qi, Zhanbin, Wu, Tong, Sun, Xiaojuan, Li, Dabing. Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors. NPJ 2D MATERIALS AND APPLICATIONS[J]. 2020, 4(1): https://doaj.org/article/ef6627badb1d40bf9af2c56ce4c8aaaa.
[10] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Wu, Tong, Lu, Wei, Li, Dabing. Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN. APPLIED SURFACE SCIENCE[J]. 2020, 520: http://dx.doi.org/10.1016/j.apsusc.2020.146369.
[11] 贲建伟, 孙晓娟, 蒋科, 陈洋, 石芝铭, 臧行, 张山丽, 黎大兵, 吕威. AlGaN基宽禁带半导体光电材料与器件. 人工晶体学报. 2020, 49(11): 2046-2067, http://lib.cqvip.com/Qikan/Article/Detail?id=7103518501.
[12] Jiang, Ke, Sun, Xiaojuan, Zhang, ZiHui, Ben, Jianwei, Che, Jiamang, Shi, Zhiming, Jia, Yuping, Chen, Yang, Zhang, Shanli, Lv, Wei, Li, Dabing. Polarization-enhanced AlGaN solar-blind ultraviolet detectors. PHOTONICS RESEARCH[J]. 2020, 8(7): 1243-1252, http://lib.cqvip.com/Qikan/Article/Detail?id=7102618646.
[13] Ben, Jianwei, Shi, Zhiming, Zang, Hang, Sun, Xiaojuan, Liu, Xinke, Lu, Wei, Li, Dabing. The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing. APPLIED PHYSICS LETTERS[J]. 2020, 116(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000543514800001.
[14] Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy. APPLIED PHYSICS LETTERS[J]. 2020, 117(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000559329700001.
[15] Chen, Yang, Zang, Hang, Jiang, Ke, Ben, Jianwei, Zhang, Shanli, Shi, Zhiming, Jia, Yuping, Lu, Wei, Sun, Xiaojuan, Li, Dabing. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020). APPLIED PHYSICS LETTERSnull. 2020, 117(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000568861700001.
[16] Kai, CuiHong, Sun, XiaoJuan, Jia, YuPing, Shi, ZhiMing, Jiang, Ke, Ben, JianWei, Wu, You, Wang, Yong, Liu, HeNan, Li, XiaoHang, Li, DaBing. Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY[J]. 2019, 62(6): http://lib.cqvip.com/Qikan/Article/Detail?id=74718871504849574854484949.
[17] Shi, Zhiming, Cao, Zhen, Sun, Xiaojuan, Jia, Yuping, Li, Dabing, Cavallo, Luigi, Schwingenschlogl, Udo. Uncovering the Mechanism Behind the Improved Stability of 2D Organic-Inorganic Hybrid Perovskites. SMALL[J]. 2019, 15(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000467263300012.
[18] Chen, Yuxuan, Li, Kuilong, Li, Zhiwen, Hu, Shengqun, Sun, Xiaojuan, Shi, Zhiming, Liu, Xinke, Li, Dabing. Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 797: 262-268, http://dx.doi.org/10.1016/j.jallcom.2019.05.115.
[19] Shi, ZhiMing, Sun, XiaoJuan, Jia, YuPing, Liu, XinKe, Zhang, ShanLi, Qi, ZhanBin, Li, DaBing. Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY[J]. 2019, 62(12): http://lib.cqvip.com/Qikan/Article/Detail?id=7100270254.
[20] 余恒炜, 孙晓娟, 王星辰, 蒋科, 吴忧, 程东碧, 石芝铭, 贾玉萍, 黎大兵. 量子随机数高斯噪声信号发生器. 光学精密工程[J]. 2019, 27(7): 1492-1499, http://lib.cqvip.com/Qikan/Article/Detail?id=7002697587.
[21] Jiang, Ke, Sun, Xiaojuan, Ben, Jianwei, Shi, Zhiming, Jia, Yuping, Wu, You, Kai, Cuihong, Wang, Yong, Li, Dabing. Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps. CRYSTENGCOMM[J]. 2019, 21(33): 4864-4873, https://www.webofscience.com/wos/woscc/full-record/WOS:000481891000020.
[22] Ben, Jianwei, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Wu, You, Kai, Cuihong, Wang, Yong, Luo, Xuguang, Feng, Zhe Chuan, Li, Dabing. Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field. Nanoscale Research Letters[J]. 2019, 14(1): 1-7, http://dx.doi.org/10.1186/s11671-019-3018-7.
[23] ZhiMing Shi, XiaoJuan Sun, YuPing Jia, XinKe Liu, ShanLi Zhang, ZhanBin Qi, DaBing Li. Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles. 中国科学:物理学、力学、天文学英文版[J]. 2019, 62(12): 89-95, http://lib.cqvip.com/Qikan/Article/Detail?id=7100270254.
[24] Liu, Xinke, Li, Kuilong, Sun, Xiaojuan, Shi, Zhiming, Huang, Zhonghui, Li, Zhiwen, Min, Long, Botcha, Venkatadivakar, Chen, Xingyuan, Xu, Xiangfu, Li, Dabing. Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2019, 793: 599-603, http://dx.doi.org/10.1016/j.jallcom.2019.04.227.
[25] Ben, Jianwei, Sun, Xiaojuan, Jia, Yuping, Jiang, Ke, Shi, Zhiming, Liu, Henan, Wang, Yong, Kai, Cuihong, Wu, You, Li, Dabing. Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing. CRYSTENGCOMM[J]. 2018, 20(32): 4623-4629, https://www.webofscience.com/wos/woscc/full-record/WOS:000442612000013.
[26] Shi, Zhiming, Zhang, Qingyun, Schwingenschlogl, Udo. Alloying as a Route to Monolayer Transition Metal Dichalcogenides with Improved Optoelectronic Performance: Mo(S1-xSex)(2) and Mo1-yWyS2. ACS APPLIED ENERGY MATERIALS[J]. 2018, 1(5): 2208-+, http://dx.doi.org/10.1021/acsaem.8b00288.
[27] Shi, Zhiming, Wang, Xinjiang, Sun, Yuanhui, Li, Yawen, Zhang, Lijun. Interlayer coupling in two-dimensional semiconductor materials. SEMICONDUCTOR SCIENCE AND TECHNOLOGYnull. 2018, 33(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000442339000001.
[28] Jia, Yuping, Sun, Xiaojuan, Shi, Zhiming, Jiang, Ke, Liu, Henan, Ben, Jianwei, Li, Dabing. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC. SMALL[J]. 2018, 14(26): https://www.webofscience.com/wos/woscc/full-record/WOS:000436408800015.
[29] Shi, Zhiming, Schwingenschlogl, Udo. Interaction of Monovacancies in Graphene. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2017, 121(4): 2459-2465, https://www.webofscience.com/wos/woscc/full-record/WOS:000393443200049.
[30] Shi, Zhiming, Kutana, Alex, Yu, Guangtao, Chen, Wei, Yakobson, Boris I, Schwingenschlogl, Udo, Huang, Xuri. Tailoring the Electronic and Magnetic Properties of Two-Dimensional Silicon Carbide Sheets and Ribbons by Fluorination. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2016, 120(28): 15407-15414, https://www.webofscience.com/wos/woscc/full-record/WOS:000380590600048.
[31] Shi, Zhiming, Kutana, Alex, Yakobson, Boris I. How Much N-Doping Can Graphene Sustain?. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2015, 6(1): 106-112, https://www.webofscience.com/wos/woscc/full-record/WOS:000347513700016.
[32] Shi, Zhiming, Zhang, Zhuhua, Kutana, Alex, Yakobson, Boris I. Predicting Two-Dimensional Silicon Carbide Mono layers. ACS NANO[J]. 2015, 9(10): 9802-9809, https://www.webofscience.com/wos/woscc/full-record/WOS:000363915300035.
[33] Zou, Xiaolong, Liu, Mingjie, Shi, Zhiming, Yakobson, Boris I. Environment-Controlled Dislocation Migration and Superplasticity in Monolayer MoS2. NANO LETTERS[J]. 2015, 15(5): 3495-3500, https://www.webofscience.com/wos/woscc/full-record/WOS:000354906000107.
[34] Shi, Zhiming, Zhao, Xingang, Huang, Xuri. First principles investigation on the stability, magnetic and electronic properties of the fully and partially hydrogenated BN nanoribbons in different conformers. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2013, 1(41): 6890-6898, https://www.webofscience.com/wos/woscc/full-record/WOS:000325763600022.
[35] Guan, Jia, Chen, Wei, Li, Yafei, Yu, Guangtao, Shi, Zhiming, Huang, Xuri, Sun, Chiachung, Chen, Zhongfang. An Effective Approach to Achieve a Spin Gapless SemiconductorHalf-MetalMetal Transition in Zigzag Graphene Nanoribbons: Attaching A Floating Induced Dipole Field via Interactions. ADVANCED FUNCTIONAL MATERIALS[J]. 2013, 23(12): 1507-1518, https://www.webofscience.com/wos/woscc/full-record/WOS:000316321800005.
[36] 石芝铭, 陈巍, 万素琴, 李辉, 黄旭日. 杂原子掺杂的含单空位缺陷BN纳米管的非线性光学性质. 高等学校化学学报[J]. 2013, 34(2): 441-446, http://lib.cqvip.com/Qikan/Article/Detail?id=44726471.
[37] Yang Chen, Ke Jiang, Hang Zang, Jianwei Ben, Shanli Zhang, Zhiming Shi, Yuping Jia, Wei L, Dabing Li, Xiaojuan Sun. In situ growth of high-quality wafer-scale graphene on dielectric substrate for high-responsivity ultraviolet photodetector. Carbon. http://dx.doi.org/10.1016/j.carbon.2020.12.055.

科研活动

   
科研项目
( 1 ) 二维AlGaN的外延生长及物性研究, 主持, 国家级, 2019-01--2021-12
( 2 ) 大功率氮化镓绿光激光器的材料生长与物理机制, 参与, 国家级, 2019-01--2023-12
( 3 ) AlGaN材料的外延生长及物性研究, 主持, 部委级, 2018-02--2021-02
参与会议
(1)低维氮化硼带隙调控的 第一性原理研究   第十五届全国MOCVD学术会议   2018-08-23

指导学生

现指导学生

齐占斌  博士研究生  070205-凝聚态物理