基本信息
郑齐文  男    中国科学院新疆理化技术研究所
电子邮件: qwzheng@ms.xjb.ac.cn
通信地址: 乌鲁木齐市北京南路40-1号
邮政编码: 830011

研究领域

CMOS器件空间辐射效应

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
CMOS器件的空间辐射效应

教育背景

2010-09--2015-05   中国科学院大学   博士
2005-09--2009-07   山东大学   学士
学历
博士研究生

学位
工学博士

工作经历

   
工作简历
2019-11~现在, 中国科学院新疆理化技术研究所, 副研究员
2015-07~2019-10,中国科学院新疆理化技术研究所, 助理研究员

专利与奖励

   
奖励信息
(1) 新疆维吾尔自治区自然科学优秀论文一等奖, 一等奖, 省级, 2018
专利成果
[1] 郑齐文, 崔江维, 余学峰, 李豫东, 郭旗. 一种抗辐射加固SOI材料的总剂量辐射性能评估方法. CN: CN112379240A, 2021-02-19.
[2] 郑齐文, 崔江维, 李小龙, 魏莹, 余学峰, 李豫东, 郭旗. 一种总剂量效应与工艺波动耦合的电路仿真方法. CN: CN112214952A, 2021-01-12.
[3] 郑齐文, 崔江维, 李小龙, 魏莹, 余学峰, 李豫东, 郭旗. 一种电路级总剂量辐射效应仿真方法. CN: CN112214953A, 2021-01-12.
[4] 崔江维, 郑齐文, 魏莹, 孙静, 余学峰, 郭旗, 陆妩, 何承发, 任迪远. 一种总剂量辐照对PMOSFET负偏压温度不稳定性影响的试验方法. CN: CN108037438B, 2020-10-09.
[5] 郑齐文, 崔江维, 余学峰, 陆妩, 孙静, 李豫东, 郭旗. 一种基于阈值电压类型匹配的6-T存储单元抗总剂量加固方法. CN: CN111008506A, 2020-04-14.
[6] 郑齐文, 崔江维, 余学峰, 陆妩, 孙静, 李豫东, 郭旗. 一种基于三维叠层封装SRAM器件的在轨单粒子翻转甄别系统. CN: CN110910946A, 2020-03-24.
[7] 孙静, 郭旗, 陆妩, 余学峰, 何承发, 施炜雷, 郑齐文, 荀明珠, 刘海涛. 一种基于PMOS剂量计的多点测量方法. CN: CN110221336A, 2019-09-10.
[8] 余学峰, 丛忠超, 郭旗, 崔江维, 郑齐文, 孙静, 周航, 汪波. 一种基于静态随机存储器的辐照偏置系统. 中国: CN103971752A, 2014-08-06.

出版信息

   
发表论文
[1] Zheng, Qiwen, Cui, Jiangwei, Yu, Xuefeng, Li, Yudong, Lu, Wu, He, Chengfa, Guo, Qi. Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2021, 68(7): 1423-1429, http://dx.doi.org/10.1109/TNS.2021.3081116.
[2] Xi, ShanXue, Zheng, QiWen, Lu, Wu, Cui, JiangWei, Wei, Ying, Wang, BaoShun, Guo, Qi. The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs. RADIATION EFFECTS AND DEFECTS IN SOLIDS[J]. 2020, 175(5-6): 551-558, http://dx.doi.org/10.1080/10420150.2019.1703114.
[3] Liang, Xiaowen, Cui, Jiangwei, Zheng, Qiwen, Zhao, Jinghao, Yu, Xuefeng, Sun, Jing, Zhang, Dan, Guo, Qi. Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET. RADIATION EFFECTS AND DEFECTS IN SOLIDS[J]. 2020, 175(5-6): 559-566, https://www.webofscience.com/wos/woscc/full-record/WOS:000508095200001.
[4] Xi, Shanxue, Zheng, Qiwen, Lu, Wu, Cui, Jiangwei, Wei, Ying, Guo, Qi. Modeling of TID-induced leakage current in ultra-deep submicron SOI NMOSFETs. MICROELECTRONICS JOURNAL[J]. 2020, 102: https://www.webofscience.com/wos/woscc/full-record/WOS:000555533000011.
[5] Zheng, Qiwen, Cui, Jiangwei, Xu, Liewei, Ning, Bingxu, Zhao, Kai, Shen, Mingjie, Yu, Xuefeng, Lu, Wu, He, Chengfa, Ren, Diyuan, Guo, Qi. Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2019, 66(4): 702-709, http://ir.xjipc.cas.cn/handle/365002/5727.
[6] 席善学, 陆妩, 郑齐文, 崔江维, 魏莹, 姚帅, 赵京昊, 郭旗. 体效应对超深亚微米 SOI器件总剂量效应的影响. 电子学报[J]. 2019, 47(5): 1065-1069, http://lib.cqvip.com/Qikan/Article/Detail?id=7002036456.
[7] 孙静, 郭旗, 郑齐文, 崔江维, 何承发, 刘海涛, 刘许强, 刘梦新. 基于SOI结构的辐照传感器的辐照响应特性研究. 核技术[J]. 2019, 42(12): 47-52, http://lib.cqvip.com/Qikan/Article/Detail?id=7100490090.
[8] Zhao, Jinghao, Zhou, Hang, Cui, Jiangwei, Zheng, Qiwen, Wei, Ying, Xi, Shanxue, Yu, Xuefeng, Guo, Qi. Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation. RADIATION EFFECTS AND DEFECTS IN SOLIDS[J]. 2019, 174(7-8): 606-616, [9] Zheng, Qiwen, Cui, Jiangwei, Lu, Wu, Guo, Hongxia, Liu, Jie, Yu, Xuefeng, Wang, Liang, Liu, Jiaqi, He, Chengfa, Ren, Diyuan, Yue, Suge, Zhao, Yuanfu, Guo, Qi. Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2019, 66(6): 892-898, [10] 姬庆刚, 刘杰, 李东青, 刘天奇, 叶兵, 赵培雄, 孙友梅, 陆妩, 郑齐文. 电离总剂量对纳米SRAM器件单粒子翻转敏感性的影响. 原子核物理评论[J]. 2019, 36(3): 367-372, http://lib.cqvip.com/Qikan/Article/Detail?id=7100349275.
[11] Zheng, QiWen, Cui, JiangWei, Wei, Ying, Yu, XueFeng, Lu, Wu, Ren, Diyuan, Guo, Qi. Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs. CHINESE PHYSICS LETTERS[J]. 2018, 35(4): http://lib.cqvip.com/Qikan/Article/Detail?id=675544671.
[12] Zheng, Qiwen, Cui, Jiangwei, Lu, Wu, Guo, Hongxia, Liu, Jie, Yu, Xuefeng, Wei, Ying, Wang, Liang, Liu, Jiaqi, He, Chengfa, Guo, Qi. The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2018, 65(8): 1920-1927, https://www.webofscience.com/wos/woscc/full-record/WOS:000442363300061.
[13] Zheng, Qiwen, Cui, Jiangwei, Yu, Xuefeng, Lu, Wu, He, Chengfa, Ma, Teng, Zhao, Jinghao, Ren, Diyuan, Guo, Qi. Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2018, 65(2): 691-697, https://www.webofscience.com/wos/woscc/full-record/WOS:000427694700003.
[14] Ma, Teng, Yu, Xuefeng, Cui, Jiangwei, Zheng, Qiwen, Zhou, Hang, Su, Dandan, Guo, Qi. Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices. MICROELECTRONICS RELIABILITY[J]. 2018, 81(2): 112-116, http://dx.doi.org/10.1016/j.microrel.2017.12.016.
[15] Zheng, Qiwen, Cui, Jiangwei, Liu, Mengxin, Zhou, Hang, Liu, Mohan, Wei, Ying, Su, Dandan, Ma, Teng, Lu, Wu, Yu, Xuefeng, Guo, Qi, He, Chengfa. Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2017, 64(7): 1897-1904, https://www.webofscience.com/wos/woscc/full-record/WOS:000405686700003.
[16] Ma, Teng, Zheng, QiWen, Cui, JiangWei, Zhou, Hang, Su, DanDan, Yu, XueFeng, Guo, Qi. An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation. CHINESE PHYSICS LETTERS[J]. 2017, 34(7): http://lib.cqvip.com/Qikan/Article/Detail?id=673063620.
[17] 马腾, 崔江维, 郑齐文, 魏莹, 赵京昊, 梁晓雯, 余学峰, 郭旗. 质子辐照对130nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响. 现代应用物理. 2017, http://lib.cqvip.com/Qikan/Article/Detail?id=674433025.
[18] 马腾, 郑齐文, 崔江维, 周航, 苏丹丹, 余学峰, 郭旗. An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation. 中国物理快报(英文版). 2017, 34(7): 173-176, http://lib.cqvip.com/Qikan/Article/Detail?id=673063620.
[19] 魏莹, 崔江维, 郑齐文, 马腾, 孙静, 文林, 余学峰, 郭旗. 辐射陷阱电荷对0.18μm N-MOSFET转移特性影响的TCAD仿真. 现代应用物理. 2017, 8(4): 43-47, http://lib.cqvip.com/Qikan/Article/Detail?id=674433024.
[20] Zheng, Qiwen, Cui, Jiangwei, Liu, Mengxin, Su, Dandan, Zhou, Hang, Ma, Teng, Yu, Xuefeng, Lu, Wu, Guo, Qi, Zhao, Fazhan. Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin. CHINESE PHYSICS B[J]. 2017, 26(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000409471400003.
[21] 周航, 郑齐文, 崔江维, 余学峰, 郭旗, 任迪远, 余德昭, 苏丹丹. 总剂量效应致0.13μm部分耗尽绝缘体上硅N型金属氧化物半导体场效应晶体管热载流子增强效应. 物理学报[J]. 2016, 65(9): 242-249, http://www.irgrid.ac.cn/handle/1471x/1062514.
[22] Zheng QiWen, Cui JiangWei, Wang HanNing, Zhou Hang, Yu DeZhao, Wei Ying, Su DanDan. Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process. ACTA PHYSICA SINICA[J]. 2016, 65(7): http://ir.xjipc.cas.cn/handle/365002/4669.
[23] 郑齐文, 崔江维, 王汉宁, 周航, 余徳昭, 魏莹, 苏丹丹. 超深亚微米互补金属氧化物半导体器件的剂量率效应. 物理学报[J]. 2016, 65(7): 258-263, http://www.irgrid.ac.cn/handle/1471x/1062527.
[24] Zheng, QiWen, Cui, JiangWei, Zhou, Hang, Yu, DeZhao, Yu, XueFeng, Guo, Qi. Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors. CHINESE PHYSICS LETTERS[J]. 2016, 33(7): http://lib.cqvip.com/Qikan/Article/Detail?id=669386622.
[25] Zhou Hang, Zheng QiWen, Cui JiangWei, Yu XueFeng, Guo Qi, Ren DiYuan, Yu DeZhao, Su DanDan. Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect. ACTA PHYSICA SINICA[J]. 2016, 65(9): http://ir.xjipc.cas.cn/handle/365002/4663.
[26] Zhou Hang, Cui JiangWei, Zheng QiWen, Guo Qi, Ren DiYuan, Yu XueFeng. Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. ACTA PHYSICA SINICA[J]. 2015, 64(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000354059200033.
[27] 周航, 崔江维, 郑齐文, 郭旗, 任迪远, 余学峰. 电离辐射环境下的部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管可靠性研究. 物理学报[J]. 2015, 64(8): 250-256, http://www.irgrid.ac.cn/handle/1471x/956389.
[28] 郑齐文. 静态随机存储器总剂量辐射损伤机制及试验方法研究. 2015, http://www.irgrid.ac.cn/handle/1471x/950231.
[29] Zheng QiWen, Cui JiangWei, Zhou Hang, Yu DeZhao, Yu XueFeng, Lu Wu, Guo Qi, Ren DiYuan. Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation. CHINESE PHYSICS B[J]. 2015, 24(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000363327400060.
[30] Zheng QiWen, Yu XueFeng, Cui JiangWei, Guo Qi, Ren DiYuan, Cong ZhongChao, Zhou Hang. Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation. CHINESE PHYSICS B[J]. 2014, 23(10): http://www.irgrid.ac.cn/handle/1471x/902523.
[31] Zheng QiWen, Cui JiangWei, Yu XueFeng, Guo Qi, Zhou Hang, Ren DiYuan. Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress. CHINESE PHYSICS LETTERS[J]. 2014, 31(12): http://lib.cqvip.com/Qikan/Article/Detail?id=663123537.
[32] Cui Jiangwei, Zheng Qiwen, Yu Xuefeng, Cong Zhongchao, Zhou Hang, Guo Qi, Wen Lin, Wei Ying, Ren Diyuan. Hot-carrier effects on irradiated deep submicron NMOSFET. Journal of Semiconductors[J]. 2014, 35(7): 074004-1, http://www.irgrid.ac.cn/handle/1471x/902521.
[33] 邓伟, 陆妩, 郭旗, 何承发, 吴雪, 王信, 郑齐文, 张孝富, 郑齐文, 马武英. 变温恒剂量率辐照加速评估方法在双极线性稳压器LM317上的应用. 原子能科学技术. 2014, 48(4): 727-733, http://lib.cqvip.com/Qikan/Article/Detail?id=49359392.
[34] Cong ZhongChao, Yu XueFeng, Cui JiangWei, Zheng QiWen, Guo Qi, Sun Jing, Wang Bo, Ma WuYing, Ma LiYa, Zhou Hang. Online and offline test method of total dose radiation damage on static random access memory. ACTA PHYSICA SINICA[J]. 2014, 63(8): http://www.irgrid.ac.cn/handle/1471x/902490.
[35] 郑齐文, 余学峰, 崔江维, 郭旗, 任迪远, 丛忠超. 总剂量辐射环境中的静态随机存储器功能失效模式研究. 物理学报[J]. 2013, 62(11): 378-384, http://www.irgrid.ac.cn/handle/1471x/735345.
[36] 张兴尧, 郭旗, 陆妩, 张孝富, 郑齐文, 崔江维, 李豫东, 周东. 串口型铁电存储器总剂量辐射损伤效应和退火特性. 物理学报[J]. 2013, 62(15): 347-352, http://www.irgrid.ac.cn/handle/1471x/735347.
[37] 吴正新, 何承发, 陆妩, 郭旗, 艾尔肯阿不列木, 于新, 张磊, 邓伟, 郑齐文. X射线对金硅界面剂量增强效应的模拟研究. 核技术[J]. 2013, 36(6): 41562-, http://www.irgrid.ac.cn/handle/1471x/735346.
[38] Zheng QiWen, Yu XueFeng, Cui JiangWei, Guo Qi, Ren DiYuan, Cong ZhongChao. Research on SRAM functional failure mode induced by total ionizing dose irradiation. ACTA PHYSICA SINICA[J]. 2013, 62(11): http://www.irgrid.ac.cn/handle/1471x/735224.
[39] 卢健, 余学峰, 郑齐文, 崔江维, 胥佳灵. 不同规模SRAM辐射损伤效应的研究. 微电子学[J]. 2013, 43(3): 426-430, http://www.irgrid.ac.cn/handle/1471x/735348.
[40] Zhang XingYao, Guo Qi, Lu Wu, Zhang XiaoFu, Zheng QiWen, Cui JiangWei, Li YuDong, Zhou Dong. Serial ferroelectric memory ionizing radiation effects and annealing characteristics. ACTA PHYSICA SINICA[J]. 2013, 62(15): http://www.irgrid.ac.cn/handle/1471x/735222.
[41] Zheng Qiwen, Yu Xuefeng, Cui Jiangwei, Guo Qi, Cong Zhongchao, Zhang Xingyao, Deng Wei, Zhang Xiaofu, Wu Zhengxin. Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress. Journal of Semiconductors[J]. 2013, 34(7): 074008-1, http://www.irgrid.ac.cn/handle/1471x/902386.
[42] 郑齐文, 余学峰, 崔江维. 超深亚微米S0I NMOSFET关态应力下的热载流子效应. 第十届全国博士生学术年会null. 2012, 200-200, http://ir.xjipc.cas.cn/handle/365002/3624.
[43] 卢健, 余学峰, 李明, 张乐情, 崔江维, 郑齐文, 胥佳灵. 不同偏置下CMOSSRAM辐射损伤效应. 核技术. 2012, 35(8): 601-605, http://lib.cqvip.com/Qikan/Article/Detail?id=42716121.

科研活动

   
科研项目
( 1 ) XX器件总剂量效应机理及抑制方法研究, 主持, 国家级, 2019-12--2024-12
( 2 ) XX器件总剂量辐射效应研究, 主持, 国家级, 2019-12--2024-12
( 3 ) 中国科学院青促会会员, 主持, 部委级, 2020-01--2024-12
参与会议
(1)累积总剂量对纳米 SRAM 器件单粒子效应影响规律及机制   中国核学会辐射物理分会第三届学术交流会   2018-07-24
(2)Tot al Ionizing Dose Influence on Single Event Upset sensitivity of 65nm 6-T SRAM   2018-05-16