Single-Event Effects (SEE) Mechanism

Radiation-Hardened Techniques

Physics

Microelectronics

070205 - Condensed Matter Physics

082703 - Nuclear Technology and Applications

080901 - Electronic Physics

Nov 2022—Present

Institute of Modern Physics, Chinese Academy of Sciences

Associate Professor

Aug 2020—Nov 2022

Institute of Modern Physics, Chinese Academy of Sciences

Assistant Professor

Sep 2015—Jul 2020

Institute of Modern Physics, Chinese Academy of Sciences

PhD in Natural Sciences

   

(1) 2025, Back-gate Bias and Supply Voltage Dependency on the Single Event Upset Susceptibility of 6T CSOI SRAM Nuclear Science and Techniques, Corresponding Author.

(2) 2025, Heavy Ion Induced SEUs and Layer Dependence in Dual-Deck 3D NAND Flash Memories, IEEE Transactions on Nuclear Science, Corresponding Author.

(3) 2024, Heavy ion energy influence on multiple-cell upsets in small sensitive volumes: from standard to high energies, Nuclear Science and Techniques, Corresponding Author.

(4) 2024, Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM Applied Physics Letters, 11th Author.

(5) 2023, Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors,
ACS Applied Materials & Interfaces, 3rd Author.

(6) 2023, Heavy-Ion Single Event Upset Effects in Nanoscale FDSOI Static Random Access Memory, Nuclear Physics Review, Corresponding Author.

(7) 2022, The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs, Electronics, Corresponding Author.

(8) 2022, Radiation Effects of Heavy Ions in SiC, GaN, Ga₂O₃ Wide-Bandgap Semiconductor Materials and Devices, Modern Applied Physics, 5th Author.

(9) 2022, Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology, Chinese Physics B, 3rd Author.

(10) 2021, Failure Modes and Mechanisms of Magnetic Tunnel Junctions Induced by Heavy-Ion Irradiation, Nuclear Physics Review, Corresponding Author.

(11) 2021, Reliability Study of 22 nm FD-SOI Static Random Access Memory, Microelectronics, 4th Author.

(12) 2021, Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM, Chinese Physics B, 8th Author.

(13) 2020, Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device, Chinese Physics B, 6th Author.

(14) 2020, Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs, Electronics, 1st Author.

(15) 2020, Multiple Layout-Hardening Comparison of SEU-Mitigated Flip-Flops in 22-nm UTBB FD-SOI Technology, IEEE Transactions on Nuclear Science, 3rd Author.

(16) 2020, An investigation of FinFET single-event latch-up characteristic and mitigation method, Microelectronics Reliability, 5th Author.

(17) 2019, SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell, Microelectronics Reliability, Co-first Author.

(18) 2019, Critical Range of Heavy-ions in 3D Stacked SRAM Memory, Annual Report of HIRFL (IMP, CAS), 1st Author.

(19) 2019, Heavy ion irradiation induced hard error in MTJ of the MRAM memory array, Microelectronics Reliability, 1st Author.

(20) 2019, Annealing behavior study on floating gate errors induced by total dose and heavy ion irradiation, Nuclear Techniques, 4th Author.

(21) 2019, Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs, Nuclear Science and Techniques, 7th Author.

(22) 2019, Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs, Electronics, 7th Author.

(23) 2019, Effects of total ionizing dose on single event effect sensitivity of FRAMs, Microelectronics Reliability, 6th Author.

(24) 2019, SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA, Electronics, 3rd Author.

(25) 2019, Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs, Nuclear Techniques (English Edition), 7th Author.

(26) 2019, Impact of Total Ionizing Dose on Single Event Upset Sensitivity of Nano-SRAMs Devices, Nuclear Physics Review, 6th Author.

(27) 2018, Influences of total ionizing dose on single event effect sensitivity in floating gate cells, Chinese Physics B, 4th Author.

(28) 2018, Anomalous annealing of floating gate errors due to heavy ion irradiation, Nuclear Instruments and Methods in Physics Research Section B, 9th Author.

(29) 2018, Anomalous annealing of floating gate errors due to heavy ion irradiation, Nuclear Instruments and Methods in Physics Research Section B, 9th Author.

(30) 2018, Influences of total ionizing dose on single event effect sensitivity in floating gate cells, Chinese Physics B, 4th Author.

(31) 2018, Radiation-Induced "Fake MBU" by Heavy Ion in 65 nm SRAM with ECC, Nuclear Physics Review, 10th Author.

(1) 2024, Method and System for Actively Regulating Non-destructive Heating of Materials Using Ion Bragg Peaks Patent Granted, First Author, Patent No.: CN117871585B

(2) 2024, Method and System for Detecting Proton Beam Uniformity Patent Application, Third Author, Patent No.: CN117590450A

(3) 2022, Method and System for Enhancing Single-Event Upset Resistance in Active Delay Filter Devices, Patent Granted, First Author, Patent No.: CN115356609A

(4) 2022, Method, System, Device and Medium for Testing Single-Event Effects in Flip-Chip Packages, Patent Granted, First Author, Patent No.: CN115356610A

(5) 2022, System and Method for Wide-Range LET Value Measurement and Calibration Patent Granted, First Author, Patent No.: CN115356608A

(6) 2022, Method for Measuring Heavy-Ion Energy and Species Patent Application, Sixth Author, Patent No.: CN114296122A

(7) 2022, System and Method for Testing Heavy-Ion Beam Uniformity, Patent Granted, Fifth Author, Patent No.: CN111366968B

(8) 2022, System and Method for Testing Heavy-Ion Beam Uniformity Patent Application, Fifth Author, Patent No.: CN111366968B

(9) 2019, Method and System for FPGA Resource Identification and Localization Patent Granted, Seventh Author, Patent No.: CN110347595A

Particle-Matter Interactions

Radiation-Induced Failure Mechanisms in Electronic Devices

Radiation-Hardened Techniques

(1) Principal Investigator, Research on In-Orbit Error Rate Prediction Method Integrating Multi-Source Experimental Data, Chinese Academy of Sciences Program, Dec 2024—Dec 2029.

(2) Participant, Mechanisms of High-Energy Ion Irradiation Damage and Applications in Aerospace Components & Nuclear Materials, National Mission Project, Dec 2023—Nov 2028.
(3) Principal Investigator, Single-Event Bit Error Rate Evaluation Technology for High-Speed Network Switching Circuits, Domestically Commissioned Project, Dec 2022—Jun 2024.
(4) Principal Investigator, Single-Event Effects Mechanisms and Hardening Techniques for Advanced Nanoscale FinFET Devices, National Mission Project, Jun 2022—Jun 2024.
(5) Principal Investigator, Ultra-High Energy Heavy-Ion Single-Event Effects in Advanced Nanoscale FinFET Devices, National Mission Project, Jan 2022—Dec 2024.
(6) Principal Investigator, Ultra-High Energy Heavy-Ion Irradiation Damage Mechanisms and Evaluation Technology for Advanced Packaging Devices, Chinese Academy of Sciences Program, Oct 2021—Oct 2023.
(7) Principal Investigator, Research on Single-Event Effects Evaluation Technology for Flip-Chip FPGA Circuits, Domestically Commissioned Project, Jun 2021—Jun 2024.

(1) 2024, Outstanding Achievement Award of Young Scientific Talent, Institute of Modern Physics, Chinese Academy of Sciences