潘东 男 研究员 博导 中国科学院半导体研究所 半导体芯片物理与技术全国重点实验室
电子邮件： pandong@semi.ac.cn
通信地址： 北京市海淀区清华东路甲35号中国科学院半导体研究所7号科研楼202室
邮政编码： 100083
研究领域
高品质窄禁带半导体纳米线/片及其异质结构的分子束外延可控生长；基于半导体纳米线/片及其异质结构的拓扑量子计算；高性能窄禁带半导体电子及量子器件。
招生信息
招收博士生和硕士生，招聘博士后
招生专业
招生方向
拓扑量子计算
教育背景
学历
2011-09--2014-06 中国科学院半导体研究所 博士研究生
学位
工作经历
工作简历
2018-01~2022-09,中国科学院半导体研究所, 副研究员
2014-07~2017-12,中国科学院半导体研究所, 助理研究员
社会兼职
教授课程
专利与奖励
2017年入选中科院青年创新促进会会员；
2021年入选中科院青年创新促进会优秀会员；
2021年入选半导体所特聘骨干研究岗位;
2023年入选半导体所特聘骨干研究岗位。
专利成果
（ 2 ） III-V族半导体低维结构的选区分子束外延制备方法, 发明专利, 2024, 第 1 作者, 专利号: 2024101460754
（ 3 ） N-S 结构半导体/超导体异质结纳米线及其制备方法, 发明专利, 2024, 第 1 作者, 专利号: 2024106097146
（ 4 ） 半导体/超导体异质结纳米线交叉结构的制备方法, 发明专利, 2024, 第 1 作者, 专利号: CN118102853A
（ 5 ） III-V族半导体低维结构的选区分子束外延制备方法, 发明专利, 2024, 第 1 作者, 专利号: CN117995655A
（ 6 ） 半导体/超导体异质结纳米线网络的选区外延制备方法, 发明专利, 2024, 第 1 作者, 专利号: CN117947506A
（ 7 ） 一种硅基高密度集成纳米线网络红外探测器的制备方法, 发明专利, 2024, 第 2 作者, 专利号: CN117613150A
（ 8 ） 一种窄禁带半导体/超导体异质结纳米线的制备方法, 发明专利, 2020, 第 1 作者, 专利号: CN111762755A
（ 9 ） 一种半导体/超导体异质结纳米线网络的制备方法, 发明专利, 2020, 第 1 作者, 专利号: CN111704105A
（ 10 ） 硅衬底上立式GaSb纳米线及其制备方法, 发明专利, 2019, 第 1 作者, 专利号: CN110504159A
（ 11 ） 圆晶级大面积半导体纳米片及其制备方法, 发明专利, 2019, 第 1 作者, 专利号: CN109962010A
（ 12 ） 立式III-V族锑化物半导体单晶薄膜的制备方法, 发明专利, 2016, 第 1 作者, 专利号: CN105405745A
（ 13 ） 一种高晶体质量超细砷化铟纳米线生长方法, 发明专利, 2013, 第 2 作者, 专利号: CN103060905A
出版信息
1 D. Pan, M. Q. Fu, X. Z. Yu, X. L. Wang, L. J. Zhu, S. H. Nie, S. L. Wang, Q. Chen, P. Xiong, S. von Molnár, J. H. Zhao*, “Controlled Synthesis of Phase-Pure InAs Nanowires on Si (111) by Diminishing the Diameter to 10 nm”, Nano Lett., 14 (2014) 1214.
2 D. Pan, D. X. Fan, N. Kang, J. H. Zhi, X. Z. Yu, H. Q. Xu*, J. H. Zhao*, “Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets”, Nano Lett., 16 (2016) 834.
3 L. X. Li, D. Pan*, Y. Z. Xue, X. L. Wang, M. L. Lin, D. Su, Q. L. Zhang, X. Z. Yu, H. So, D. H. Wei, B. Q. Sun, P. H. Tan, A. L. Pan, J. H Zhao*, “Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy”, Nano Lett., 17 (2017) 622.
4 D. Pan, J. Y. Wang, W. Zhang, L. J. Zhu, X. J. Su, F. R. Fan, Y. H. Fu, S. Y. Huang, D. H. Wei, L. J. Zhang, M. L. Sui, A. Yartsev, H. Q. Xu, J. H. Zhao*, “Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale”, Nano Lett., 19 (2019) 1632.
5 S. K. Zhang, H. X. Jiao, X. D. Wang, Y. Chen, H. Wang, L. Q. Zhu, W. Jiang, J. J. Liu, L. X. Sun, T. Lin, H. Shen, W. D. Hu, X. J. Meng*, D. Pan*, J. L. Wang*, J. H. Zhao, and J. H. Chu, “Highly Sensitive InSb Nanosheets Infrared Photodetector Passivated by Ferroelectric Polymer”, Adv. Funct. Mater., 30 (2020) 2006156.
6 D. Pan#, H. D. Song#, S. Zhang#, L. Liu, L. J. Wen, D. Y. Liao, R. Zhuo, Z. C. Wang, Z. T. Zhang, S. Yang, J. H. Ying, W. T. Miao, R. N. Shang, H. Zhang*, J. H. Zhao*, “In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices”, Chin. Phys. Lett. (Express Letters), 39 (2022) 058101.
7 Z. Y. Wang#, H. D. Song#*, D. Pan#, Z. T. Zhang#, W. T. Miao, R. D. Li, Z. Cao, G. Zhang, L. Liu, L. J. Wen, R. Zhuo, D. E. Liu, K. He, R. N. Shang, J. H. Zhao*, H. Zhang*, “Plateau Regions for Zero-Bias Peaks within 5% of the Quantized Conductance Value 2e2/h”, Phys. Rev. Lett., 129 (2022) 167702.
8 S. Zhang#, Z. C. Wang#, D. Pan#, H. Z. Li, S. Lu, Z. L. Li, G. Zhang, D. H. Liu, Z. Cao, L. Liu, L. J. Wen, D. Y. Liao, R. Zhuo, R. N. Shang, D. E. Liu*, J. H. Zhao*, H. Zhang*, “Suppressing Andreev Bound State Zero Bias Peaks Using a Strongly Dissipative Lead”, Phys. Rev. Lett., 128 (2022) 076803.
9 H. T. Su, J.Y. Wang, H. Gao, Y. Luo, S. L. Yan, X. J. Wu, G. A. Li, J. Shen, L. Lu, D. Pan*, J. H. Zhao, P. Zhang*, and H. Q. Xu*, “Microwave-Assisted Unidirectional Superconductivity in Al-InAs Nanowire-Al Junctions under Magnetic Fields”, Phys. Rev. Lett., 133 (2024) 087001.
10 Y. Luo, X. F. Liu, Z. H. Liu, W. G. Li, S. L. Yan, H. Gao, H. T. Su, D. Pan*, J. H. Zhao, J. Y. Wang*, H. Q. Xu*, “One-Dimensional Quantum Dot Array Integrated with Charge Sensors in an InAs Nanowire”, Nano Lett., 24 (2024) 14012.
11 X. J. Wu*, J. Y. Wang, H. T. Su, S. L. Yan, D. Pan*, J. H. Zhao, P. Zhang,∗ and H. Q. Xu*, “Tunable Superconducting Diode Effect in Higher-Harmonic InSb Nanosheet Interferometers”, New J. Phys., 27 (2025) 023031.
12 R. Zhuo, L. J. Wen, J. Wang, X. M. Dou, L. Liu, X. Y. Hou, D. Y. Liao, B. Q. Sun, D. Pan*, and J. H. Zhao*, “Synthesis and Optical Properties of High-Quality Ultrathin Homogeneous GaAs1-xSbx Nanowires”, Sci. China-Phys. Mech. Astron., 67 (2024) 127311.
13 F. Y. He, L. J. Wen, X. Y. Hou, L. H. Li, L. Liu, R. Zhuo, P. H. Tan, D. Pan*, and J. H. Zhao*, “Catalyst-Free in-Plane Growth of Ultra-Thin High-Quality InSb Nanowires”, Appl. Phys. Lett., 125 (2024) 223104.
14 L. J. Wen, D. Y. Liao, L. Liu, F. Y. He, R. Zhuo, X. Y. Hou, D. Pan*, and J. H. Zhao*, “Metal-Sown Selective Area Growth of High Crystalline Quality InAsSb Nanowires and Networks by Molecular-Beam Epitaxy”, Materials Today Nano, 28 (2024) 100537.
15 D. Y. Liao, Q. Zhong, X. Y. Hou, D. H. Wei, D. Pan*, J. H. Zhao, “High-Quality Thickness-Tunable InAs Nanowire Crosses Grown by Molecular-Beam Epitaxy”, Vacuum, 230 (2024) 113657.
16 J. B. He#, D. Pan#, M. L. Liu, Z. Z. Lyu, Z. M. Jia, G. Yang, S. Zhu, G. T. Liu, J. Shen, S. N. Shevchenko, F. Nori*, J. H. Zhao*, L. Lu*, and F. M. Qu*, “Quantifying Quantum Coherence of Multiple-Charge States in Tunable Josephson Junctions”, npj Quantum Inform., 10 (2024) 1.
17 M. F. Xue#, D. Pan#, J. H. Zhao, J. N. Chen*, “Optically Tunable Transient Plasmons in InSb Nanowires”, Adv. Mater., 35 (2023) 2208952.
18 S. L. Yan#, H. T. Su#, D. Pan#, W. J. Li, Z. Z. Lyu, M. Chen, X. J. Wu, L. Lu, J. H. Zhao*, J. Y. Wang*, and H. Q. Xu*, “Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions”, Nano Lett., 23 (2023) 6497.
19 S. Zhang#, Z. C. Wang#, D. Pan#, Z. Y. Wang, Z. L. Li, Z. T. Zhang, Y. C. Gao, Z. Cao, G. Zhang, L. Liu, L. J. Wen, R. Zhuo, D. E. Liu, K. He, R. N. Shang, J. H. Zhao*, and H. Zhang*, “In Situ Tuning of Dynamical Coulomb Blockade on Andreev Bound States in Hybrid Nanowire Devices”, Phys. Rev. B., 108 (2023) 235416.
20 潘东、赵建华，“高质量半导体-超导体纳米线原位分子束外延和低温量子输运研究进展”，真空科学与技术学报，43 (2023) 177-190 (邀请综述).
21 Z. C. Wang#, S. Zhang#, D. Pan#, G. Zhang#, Z. Z. Xia, Z. L. Li, D. H. Liu, Z. Cao, L. Liu, L. J. Wen, D. Y. Liao, R. Zhuo, Y. Q. Li, D. E. Liu, R. N. Shang*, J. H. Zhao*, H. Zhang*, “Large Andreev Bound State Zero-Bias Peaks in a Weakly Dissipative Environment”, Phys. Rev. B, 106 (2022) 205421.
22 H. D. Song#, Z. T. Zhang#, D. Pan#, D. H. Liu, Z. Y. Wang, Z. Cao, L. Liu, L. J. Wen, D. Y. Liao, R. Zhuo, D. E. Liu, R. N. Shang*, J. H. Zhao*, H. Zhang*, “Large Zero Bias Peaks and Dips in a Four-Terminal Thin InAs-Al Nanowire Device”, Phys. Rev. Research, 4 (2022) 033235.
23 X. M. Yuan#*, D. Pan#, Y. J. Zhou, X. T. Zhang, K. Peng, B. J. Zhao, M. T. Deng*, J. He*, H. H. Tan, C. Jagadish, “Selective Area Epitaxy of III-V Nanostructure Arrays and Networks: Growth, Applications and Future Directions”, Applied Physics Reviews, 8 (2021) 021302 (邀请综述).
24 J. B. He#, D. Pan#, G. Yang, M. L. Liu, J. H. Ying, Z. Z. Lyu, J. Fan, X. N. Jing, G. T. Liu, B. Lu, D. E. Liu, J. H. Zhao*, L. Lu*, F. M. Qu*, “Nonequilibrium Interplay Between Andreev Bound States and Kondo Effect”, Phys. Rev. B, 102 (2020) 075121.
25 L. Liu, L. J. Wen, F. Y. He, R. Zhuo, D. Pan*, J. H. Zhao, “Selective Area Growth of in-Plane InAs Nanowires and Nanowire Networks on Si Substrates by Molecular-Beam Epitaxy”, Nanotechnology, 35 (2024) 065705.
26 L. Liu, D. Pan*, L. J. Wen, R. Zhuo, J. H. Zhao, “High-Quality Vertically Aligned InAs Nanowires Grown by Molecular-Beam Epitaxy Using Ag-In Alloy Segregation”, Nanotechnology, 34 (2023) 225701.
27 M. L. Liu#, D. Pan#, T. Le, J. B. He, Z. M. Jia, S. Zhu, G. Yang, Z. Z. Lyu, G. T. Liu, J. Shen, J. H. Zhao*, L. Lu*, and F. M. Qu*, “Gate-Tunable Negative Differential Conductance in Hybrid Semiconductor-Superconductor Devices”, Chin. Phys. Lett., 40 (2023) 067301.
28 L. J. Wen, D. Pan*, L. Liu, S. C. Tong, R. Zhuo, J. H. Zhao*, “Large-Composition-Range Pure-Phase Homogeneous InAs1-xSbx Nanowires”, J. Phys. Chem. Lett., 13 (2022) 598.
29 L. J. Wen, L. Liu, D. Y. Liao, R. Zhuo, D. Pan*, J. H. Zhao, “Silver-Assisted Growth of High-Quality InAs1-xSbx Nanowires by Molecular-Beam Epitaxy”, Nanotechnology, 31 (2020) 465602.
30 L. J. Wen, L. Liu, F. Y. He, R. Zhuo, X. Y. Hou, D. Pan*, and J. H. Zhao*, “In-Plane Selective Area Epitaxy of InAsSb Nanowire Networks for High-Performance Scalable Infrared Photodetectors”, Adv. Optical Mater., 12 (2024) 2400182.
31 X. Z. Wang, D. Pan*, M. Sun, F. J. Lyu, J. H. Zhao, Q. Chen*, “High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity Dependent Negative Photoconductivity”, ACS Appl. Mater. Interfaces, 13 (2021) 26187.
32 Q. Shi, S. K. Zhang*, X. D. Wang, Y. Chen, Y. Zhou, T. Lin, H. Shen, J. Ge, X. J. Meng, D. Pan*, J. H. Zhao, W. D. Hu, N. Dai, J. H. Chu, and J. L. Wang*, “Ultralow Dark Current Room-Temperature Infrared Photodetector Based on InSb Nanosheets/MoS2 Van der Waals Heterostructure”, Phys. Status Solidi A, (2023) 2300245.
33 L. J. Wen, D. Pan*, D. Y. Liao, J. H. Zhao, “Foreign-Catalyst-Free GaSb Nanowires Directly Grown on Cleaved Si Substrates by Molecular-Beam Epitaxy”, Nanotechnology, 31 (2020) 155601.
34 H. So, D. Pan*, L. X. Li, J. H. Zhao*, “Foreign-Catalyst-Free Growth of InAs/InSb Axial Heterostructure Nanowires on Si (111) by Molecular-Beam Epitaxy”, Nanotechnology, 28 (2017) 135704.
35 L. X. Li, D. Pan*, H. So, X. L. Wang, Z. F. Yu, J. H. Zhao*, “GaAsSb/InAs Core-Shell Nanowires Grown by Molecular-Beam Epitaxy”, J. Alloys Compd., 724 (2017) 659.
36 X. T. Yin, D. Y. Liao，D. Pan*, P. Wang*, and B. B. Liu*, “Room-Temperature Photoluminescence in GaAsSb Nanowires Under High-Pressure”, Acta Phys. Sin., 74 (2025) 067802.
37 X. T. Yin, Y. L. Liang, L. X. Li, S. Liu, D. Pan*, and P. Wang*, “Excitation-Wavelength-Dependent Photoluminescence in GaAs Nanowires Under High-Pressure”, Nanotechnology, 35 (2024) 245702.
38 L. M. Ma, P. Wang*, X. T. Yin, Y. L. Liang, S. Liu, L. X. Li, D. Pan*, Z. Yao, B. B. Liu and J. H. Zhao, “Enhancing the Light Emission of GaAs Nanowires by Pressure-Modulated Charge Transfer”, Nanoscale Adv., 2 (2020) 2558.
39 Y. L. Liang, X. T. Yin, P. Wang*, L. X. Li, D. Pan*, H. Y. Li, Q. J. Li, B. B. Liu, J. H. Zhao, “Semiconductor-Metal Transition in GaAs Nanowires Under High Pressure”, Chin. Phys. B, 28 (2019) 076401.
40 X. F. Zhang, Y. Y. Zhang*, D. Pan*, X. Y. Yi, J. H. Zhao, J. M. Li, “Negative Photoconductive Effects in Uncooled InAs Nanowire Photodetectors”, Frontiers in Physics, 9 (2021) 725680.
41 X. Y. Hou, L. J. Wen, F. Y. He, R. Zhuo, L. Liu, H. L. Wang, Q. Zhong, D. Pan*, and J. H. Zhao*, “Embedded High-Quality Ternary GaAs1-xSbx Quantum Dots in GaAs Nanowires by Molecular-Beam Epitaxy”, J. Semicond., 45 (2024) 082101.
42 L. X. Li, D. Pan*, X. Z. Yu, H. So, J. H. Zhao*, “Manipulation of Morphology and Structure of the Top of GaAs Nanowires Grown by Molecular-Beam Epitaxy”, J. Semicond., 38 (2017) 103001.
43 D. Pan, S. L. Wang*, H. L. Wang, X. Z. Yu, X. L. Wang, J. H. Zhao*, “Structure and Magnetic Properties of (In, Mn)As Based Core-Shell Nanowires Grown on Si (111) by Molecular-Beam Epitaxy”, Chin. Phys. Lett., 31 (2014) 078103.
44 D. Pan, J. K. Jian, Y. F. Sun, R. Wu*, “Structure and Magnetic Characteristics of Si-Doped AlN Films”, J. Alloys Compd., 519 (2012) 41.
45 G. A. Li, X. F. Shi, T. Lin, G. Yang, M. Rossi, G. Badawy, Z. Y. Zhang, J. Y. Shi, D. G. Qian, F. Lu, L. Gu, A. Q. Wang, B. B.Tong, P. L. Li, Z. Z. Lyu, G. T. Liu, F. M. Qu, Z. W. Dou, D. Pan, J. H. Zhao, Q. H. Zhang, E. P. A. M. Bakkers, M. P. Nowak,* P.Wójcik,* L. Lu,* and J. Shen*, “Versatile Method of Engineering the Band Alignment and the Electron Wavefunction Hybridization of Hybrid Quantum Devices”, Adv. Mater. 36 (2024) 2403176.
46 N. Kang*, D. X. Fan, J. H. Zhi, D. Pan, S. Li, C. Wang, J. K. Guo, J. H. Zhao*, H. Q. Xu*, “Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets”, Nano Lett., 19 (2019) 561.
47 J. Y. Wang, G. Y. Huang, S. Y. Huang*, J. H. Xue, D. Pan, J. H. Zhao*, H. Q. Xu*, “Anisotropic Pauli Spin-Blockade Effect and Spin-Orbit Interaction Field in an InAs Nanowire Double Quantum Dot”, Nano Lett., 18 (2018) 4741.
48 J. Y. Wang, S. Y. Huang*, G. Y. Huang, D. Pan, J. H. Zhao, H. Q. Xu*, “Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire”, Nano Lett., 17, (2017) 4158.
49 M. Q. Fu, Z. Q. Tang, X. Li, Z. Y. Ning, D. Pan, J. H. Zhao, X. L. Wei, Q. Chen*, “Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires”, Nano Lett., 16, (2016) 2478.
50 X. Li, X. L. Wei*, T. T. Xu, D. Pan, J. H. Zhao, Q. Chen*, “Remarkable and Crystal-Structure-Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires”, Adv. Mater., 27 (2015) 2852.
51 L. J. Wen, D. Pan, J. H. Zhao*, “From High-Quality Semiconductor/Superconductor Nanowires to Majorana Zero Mode.”, Acta Phys. Sin., 70 (2021) 058101(邀请综述).
52 Z. C. Pan, D. Pan, Y. F. Zhou, J. H. Zhao, H. Q. Xu, S. Y. Huang*, “Tunable Transport Properties of Dual-Gated InAs/GaSb Core/Shell Nanowires”, J. Appl. Phys., 133 (2023) 084302.
53 X. Z. Wang, D. Pan, Y. X. Han, M. Sun, J. H. Zhao, Q. Chen*, “Vis-IR Wide-Spectrum Photodetector at Room Temperature Based on p-n Junction-Type GaAs1-xSbx/InAs Core-Shell Nanowire” ACS Appl. Mater. Interfaces, 11 (2019) 38973.
54 Q. Sun, D. Pan, X. T. Zhang, J. H. Zhao, P. P. Chen, W. Lu, J. Zou*, “Axiotaxy Driven Growth of Belt-Shaped InAs Nanowires in Molecular Beam Epitaxy”, Nano Res., 14 (2021) 2330.
55 Q. Sun, D. Pan, M. Li, J. H. Zhao, P. P. Chen, W. Lu, J. Zou*, “In Situ TEM Observation of the Vapor-Solid-Solid Growth of <00-1> InAs Nanowires”, Nanoscale, 12 (2020) 11711.
56 L. B. Wang, D. Pan, G. Y. Huang, J. H. Zhao, N. Kang*, H. Q. Xu, “Crossover from Coulomb Blockade to Ballistic Transport in InAs Nanowire Devices” Nanotechnology, 30 (2019) 124001.
57 W. Y. Yang, D. Pan, R. Shen, X. Z. Wang, J. H. Zhao, Q. Chen*, “Suppressing the Excess OFF-State Current of Short-Channel InAs Nanowire Field-Effect Transistors by Nanoscale Partial-Gate”, Nanotechnology, 29 (2018) 415203.
58 M. Q. Fu, D. Pan, Y. J. Yang, T. W. Shi, Z. Y. Zhang, J. H. Zhao, H. Q. Xu, Q. Chen*, “Electrical Characteristics of Field-Effect Transistors Based on Indium Arsenide Nanowire Thinner Than 10 nm”, Appl. Phys. Lett., 105 (2014) 143101.
59 L. Zhang, D. Pan, Y. Chen, J. H. Zhao, and H. Q. Xu*, “Quantum Oscillations in a Hexagonal Boron Nitride-Supported Single Crystalline InSb Nanosheet”, Chin. Phys. B, 31 (2022) 098507.
60 J. R. Huo, Z. Z. Xia, Z. L. Li, S. Zhang, Y. Q. Wang, D. Pan, Q. C. Liu, Y. L. Liu, Z. C. Wang, Y. C. Gao, J. H. Zhao, T. F. Li, J. H. Ying*, R. N. Shang, and H. Zhang*, “Gatemon Qubit Based on a Thin InAs-Al Hybrid Nanowire”, Chin. Phys. Lett. (Express Letters), 40 (2023) 047302.
61 S. Benter, M. Bianchi, D. Pan, J. H. Zhao, H. Q. Xu, R. Timm, Ph. Hofmann, A. Mikkelsen*, “2D Electron Gas Formation on InAs Wurtzite Nanosheet Surfaces”, Appl. Phys. Lett., 124 (2024) 153104.
62 Z. Z. Xia, J. R. Huo, Z. L. Li, J. H. Ying, Y. L. Liu, X. Y. Tang, Y. Q. Wang, M. Chen, D. Pan, S. Zhang, Q. C. Liu, T. F. Li, L. Li, K. He, J. H. Zhao, R. N. Shang, and H. Zhang*, “Gate-Compatible Circuit Quantum Electrodynamics in a Three-Dimensional Cavity Architecture”, Phys. Rev. Appl., 21 (2024) 034031.
63 S. Benter, Y. Liu, R. D. P. Maciel, C. S. Ong, L. Linnala, D. Pan, A. Irish, Y.-P. Liu, J. H. Zhao, H. Q. Xu, O. Eriksson, R. Timm, A. Mikkelsen*, “Tuneable 2D Surface Bismuth Incorporation on InAs Nanosheets”, Nanoscale, 15 (2023) 9551.
64 W. J. Li, Z. H. Liu, J. W. Mu, Y. Luo, D. Pan, J. H. Zhao, and H. Q. Xu*, “Charge States, Triple Points, and Quadruple Points in an InAs Nanowire Triple Quantum Dot Revealed by an Integrated Charge Sensor”, Adv. Quantum Technol., 6 (2023) 2200158.
65 L. Zhang, Y. Chen, D. Pan, S. Y. Huang, J. H. Zhao, and H. Q. Xu*, “Fabrication and Characterization of InSb Nanosheet/hBN/Graphite Heterostructure Devices”, Nanotechnology, 33 (2022) 325303
66 W. J. Li, J. W. Mu, Z. H. Liu, S. Y. Huang, D. Pan, Y. J. Chen, J. Y. Wang, J. H. Zhao and H. Q. Xu*, “Charge Detection of a Quantum Dot Under Different Tunneling Barrier Symmetries and Bias Voltages”, Nanoscale, 14 (2022) 14029.
67 F. R. Fan, Y. J. Chen, D. Pan, J. H. Zhao, and H. Q. Xu*, “Electrically Tunable Spin-Orbit Interaction in an InAs Nanosheet”, Nanoscale Adv., 4 (2022) 2642.
68 Z. H. Sun, S. Y. Chen, N. Tang*, D. Pan, H. M. Guan, X. Y. Zhang, S. X. Zhang, J. H. Zhao, J. W. Luo*, S. S. Li, W. K. Ge, and B. Shen, “Observation of Direct Hole Rashba Spin-Orbit Coupling in p-Type GaAsSb Nanowires”, Phys. Rev. B., 108 (2023) L081302.
69 J. H. Zhi, N. Kang*, F. Su, D. X. Fan, S. Li, D. Pan, S. Zhao, J. H. Zhao*, H. Q. Xu*, “Coexistence of Induced Superconductivity and Quantum Hall States in InSb Nanosheets”, Phys. Rev B, 99 (2019) 245302.
70 Y. J. Chen, S. Y. Huang, D. Pan, J. H. Xue, L. Zhang, J. H. Zhao*, H. Q. Xu*, “Strong and Tunable Spin-Orbit Interaction in a Single Crystalline InSb Nanosheet”, npj 2D Mater. Appl., 5 (2021) 3.
71 X. M. Wang, S. Y. Huang*, J. Y. Wang, D. Pan, J. H. Zhao, H. Q. Xu, “A Charge Sensor Integration to Tunable Double Quantum Dots on Two Neighboring InAs Nanowires”, Nanoscale, 13 (2021) 1048.
72 J. W. Mu, S. Y. Huang, Z. H. Liu, W. J. Li, J. Y. Wang, D. Pan, G. Y. Huang, J. Chen, J. H. Zhao*, H. Q. Xu*, “A Highly Tunable Quadruple Quantum Dot in a Narrow Bandgap Semiconductor InAs Nanowire”, Nanoscale, 13, (2021) 3983.
73 F. R. Fan, Y. J. Chen, D. Pan, J. H. Zhao, H. Q. Xu*, “Measurements of Spin-Orbit Interaction in Epitaxially Grown InAs Nanosheets”, Appl. Phys. Lett., 117 (2020) 132101.
74 W. J. Li, J. W. Mu, S. Y. Huang, D. Pan, J. H. Zhao, H. Q. Xu*, “Detection of Charge States of an InAs Nanowire Triple Quantum Dot with an Integrated Nanowire Charge Sensor”, Appl. Phys. Lett., 117 (2020) 262102.
75 J. H. Xue, Y. J. Chen, D. Pan, J. Y. Wang, J. H. Zhao, S. Y. Huang*, H. Q. Xu*, “Gate Defined Quantum Dot Realized in a Single Crystalline InSb Nanosheet”, Appl. Phys. Lett., 114 (2019) 023108.
76 Y. J. Chen, S. Huang, J. Mu, D. Pan, J. H. Zhao, H. Q. Xu*, “ A Double Quantum Dot Defined by Top Gates in a Single Crystalline InSb Nanosheet”, Chin. Phys. B, 30 (2021) 128501.
77 J. H. Zhi, N. Kang*, S. Li, D. X. Fan, F. Su, D. Pan, S. Zhao, J. H. Zhao, H. Q. Xu*, “Supercurrent and Multiple Andreev Reflections in InSb Nanosheet SNS Junctions”, Phys. Status Solidi B, 256 (2019) 1800538.
78 T. Li, R. Shen, M. Sun, D. Pan, J. M. Zhang, J. Xu, J. H. Zhao, Q. Chen*, “Improving the Electrical Properties of InAs Nanowire Field Effect Transistors by Covering Them with Y2O3/HfO2 Layers”, Nanoscale, 10 (2018) 18492.
79 J. Y. Wang, S. Y. Huang*, Z. J. Lei, D. Pan, J. H. Zhao, H. Q. Xu*, “Measurements of the Spin-Orbit Interaction and Landé g Factor in a Pure-Phase InAs Nanowire Double Quantum Dot in the Pauli Spin-Blockade Regime”, Appl. Phys. Lett., 109 (2016) 053106.
80 B. Y. Feng, S. Y. Huang*, J. Y. Wang, D. Pan, J. H. Zhao, H. Q. Xu*, “Schottky Barrier Heights at the Interfaces Between Pure-Phase InAs Nanowires and Metal Contacts”, J. Appl. Phys., 119 (2016) 054304.
81 X. Z. Yu, L. X. Li, H. L. Wang, J. X. Xiao, C. Shen, D. Pan, J. H. Zhao*, “Two-Step Fabrication of Self-Catalyzed Ga-Based Semiconductor Nanowires on Si by Molecular-Beam Epitaxy”, Nanoscale, 8 (2016) 10615.
82 L. B. Wang, J. K. Guo, N. Kang*, D. Pan, S. Li, D. X. Fan, J. H. Zhao, H. Q. Xu*, “Phase-Coherent Transport and Spin Relaxation in InAs Nanowires Grown by Molecule Beam Epitaxy”, Appl. Phys. Lett., 106 (2015) 173105.
83 T. W. Shi, M. Q. Fu, D. Pan, Y. Guo, J. H. Zhao, Q. Chen*, “Contact Properties of Field-Effect Transistors Based on InAs Nanowire Thinner Than 16 nm”, Nanotechnology, 26 (2015) 175202.
84 X. Li, X. L. Wei*, T. T. Xu, Z. Y. Ning, J. P. Shu, X. Y. Wang, D. Pan, J. H. Zhao, T. Yang, Q. Chen*, “Mechanical Properties of Individual InAs Nanowires Studied by Tensile Tests”, Appl. Phys. Lett., 104 (2014) 103110.
85 Q. Li, S. Y. Huang*, D. Pan, J. Y. Wang, J. H. Zhao, H. Q. Xu*, “Suspended InAs Nanowire Gate-All-Around Field-Effect Transistors”, Appl. Phys. Lett., 105 (2014) 113106.
86 H. L. Sun, X. P. Zhao, R. K. Han, C. Zhang, L. Liu, H. R. Qin, Z. C. Xie, H. X. Deng, D. Pan, D. H. Wei, J. H. Zhao*, “Compositionally Modulated Perpendicular Magnetic Anisotropy in Tetragonal MnxAl Films”, Appl. Phys. Lett., 124 (2024) 102404.
87 Z. Deng, H. L. Wang*, Q. Q. Wei, L. Liu, H. L. Sun, D. Pan, D. H. Wei, J. H. Zhao, “Enhanced Magnetic Anisotropy and High Hole Mobility in Magnetic Semiconductor Ga1-x-yFexNiySb”, J. Semicond., 45 (2024) 012101.
88 Y. T. Wang, X. Jing, L. J. Bai, D. Pan, W. J. Wang, F. C. Lu, X. Q. Fu, X. L. Liu, X. L. Ding, J. J. Deng*, “Preparation and Optoelectronic Performance of Two-Dimensional MoSe2/WSe2 Lateral and Vertical Heterostructures”, Materials Today Physics, 43 (2024) 101404.
89 J. L. Zhu, X. B. Tan, D. Pan, Y. N. Luo, R. H. Li, X. R. Rao, R. H. Cheng, C. L. Xia, Y. Chen, Q. Sun*, R. Ang*, “Functionally Separated Electronic Band Engineering via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-Range Thermoelectric Performance in GeTe”, Chem. Eng. J., 480 (2024) 148135.
90 W. Yuan, Q. Deng, D. Pan, X. An, C. Y. Zhao, W. J. Su, Z. M. He, Q. Sun* and R. Ang*, “Synergistic Carrier and Phonon Transport Advance Ag Dynamically-Doped n-Type PbTe Thermoelectrics via Mn Alloying”, J. Mater. Chem. A, 12 (2024) 1300.
91 Z. C. Xie, G. C. Meng, L. J. Wen, Z. Y. Zhao, H. L. Sun, H. R. Qin, D. Pan, H. L. Wang, D. H. Wei*, and J. H. Zhao, “Microstructure and Magnetic Properties of the Ferromagnetic Semiconductor Ge1-xMnx Following Rapid Thermal Annealing”, Phys. Rev. B., 109 (2024) 024407.
92 X. L. Wang*, Z. X. Shang, C. Zhang, J. Q. Kang, T. Liu, X. Y. Wang*, S. L. Chen, H. L. Liu*, W. Tang, Y. J. Zeng*, J. F. Guo, Z. H. Cheng, L. Liu, D. Pan, S. C. Tong, B. Wu, Y. Y. Xie, G. C. Wang, J. X. Deng, T. R. Zhai, H. X. Deng, J. W. Hong, J. H. Zhao, “Electrical and Magnetic Anisotropies in van der Waals Multiferroic CuCrP2S6”, Nat. Commun., 14 (2023) 840.
93 Y. M. Sun, T. Lin, N. Lei*, X. Chen, W. Kang, Z. Y. Zhao, D. H. Wei, C. Chen, S. M. Pang, L. L. Hu, L. Yang, E. X. Dong, L. Zhao, L. Liu, Z. Yuan, A. Ullrich, C. H. Back, J. Zhang, D. Pan, J. H. Zhao, M. Feng*, A. Fert, W. S. Zhao, “Experimental Demonstration of a Skyrmion-Enhanced Strain-Mediated Physical Reservoir Computing System”, Nat. Commun., 14 (2023) 3434.
94 R. K. Han, L. Liu, H. L. Sun, H. R. Qin, X. P. Zhao*, D. Pan, D. H. Wei, and J. H. Zhao*, “Large Tunable Perpendicular Magnetic Anisotropy in Ultrathin Co-Based Ferromagnetic Films Induced by Antiferromagnetic δ-Mn”, Phys. Rev. Appl., 19 (2023) 024033.
95 Z. Y. Zhao, Z. C. Xie, Y. M. Sun, Y. M. Yang, Y. Cao, L. Liu, D. Pan, N. Lei*, Z. M. Wei, J. H. Zhao, D. H. Wei*, “Role of Interfacial Contribution in the Bulklike Enhanced Dzyaloshinskii-Moriya Interaction of [Co/Tb]N Multilayers”, Phys. Rev. B., 108 (2023) 024429.
96 Z. H. Sun, S. Y. Chen, N. Tang*, D. Pan, H. M. Guan, X. Y. Zhang, S. X. Zhang, J. H. Zhao, J. W.Luo*, S. S. Li, W. K. Ge, and B. Shen, “Observation of Direct Hole Rashba Spin-Orbit Coupling in p-Type GaAsSb Nanowires”, Phys. Rev. B., 108 (2023) L081302.
97 X. L. Wang*, D. Pan, Q. Q. Zeng, X. Chen, H. L. Wang, D. Zhao, Z. Y. Xu, Q. Q. Yang, J. X. Deng, T. R. Zhai, G. H. Wu, E. K. Liu, J. H. Zhao, “Robust Anomalous Hall Effect and Temperature Driven Lifshitz Transition in Weyl Semimetal Mn3Ge”, Nanoscale, 13 (2021) 2601.
98 S. C. Tong, D. Pan, X. L. Wang, Z. F. Yu, Y. H. Xu, D. H. Wei*, “Unsaturated Linear Magnetoresistance Effect in High-Quality Free-Standing InSb Single-Crystal Nanosheets”, J. Phys. D: Appl. Phys., 53 (2020) 18LT04.
99 X. L. Wang*, C. Zhang, Q. Yang, L. Liu, D. Pan, X. Chen, J. X. Deng, T. R. Zhai, H. X. Deng*, “Manipulation of Crystalline Structure, Magnetic Performance and Topological Feature in Mn3Ge Films”, APL Mater., 9 (2021) 111107.
100 S. Li., J. Lu*, L. J. Wen, D. Pan, H. L. Wang, D. H. Wei, J. H. Zhao, “Unusual Anomalous Hall Effect in a Co2MnSi/MnGa/Pt Trilayer”, Chin. Phys. Lett., 37 (2020) 077303.
101 Z. C. Wang, D. Pan, L. Wang*, T. W. Wang, B. Zhao, Y. Wu, M. Yang, X. G. Xu*, J. Miao, J. H. Zhao, Y. Jiang, “Room-Temperature Spin Transport in InAs Nanowire Lateral Spin Valve” RSC Adv., 6 (2016) 75736.
102 X. L. Wang, H. L. Wang, D. Pan, T. Keiper, L. X. Li, X. Z. Yu, J. Lu, E. Lochner, S. von Molnár, P. Xiong*, J. H. Zhao*, “Robust Manipulation of Magnetism in Dilute Magnetic Semiconductor (Ga, Mn)As by Organic Molecules”, Adv. Mater., 27 (2015) 8043.
103 M. Y. Zhu, J. Lu, J. L. Ma, L. L. Li, H. L. Wang, D. Pan, J. H. Zhao*, “Molecular-Beam Epitaxy of High-Quality Diluted Magnetic Semiconductor (Ga, Mn)Sb Single-Crystalline Films”, Acta Phys. Sin., 64 (2015) 077501.
104 H. H. Ren, J. K. Jian, C. Chen, D. Pan, A. Ablat, Y. F. Sun, J. Li, R. Wu*, “Ga-Vacancy-Induced Room-Temperature Ferromagnetic and Adjusted-Band-Gap Behaviors in GaN Nanoparticles”, Appl. Phys. A, 116 (2014) 185.
105 L. J. Zhu, D. Pan, J. H. Zhao*, “Anomalous Hall Effect in Chemically Disordered L10-Mn1.5Ga Films with Variable Chemical Ordering”, Phys. Rev. B, 89 (2014) 220406.
106 S. H. Nie, L. J. Zhu, D. Pan, J. Lu, J. H. Zhao*, “Structural Characterization and Magnetic Properties of Perpendicularly Magnetized MnAl Films Grown by Molecular-Beam Epitaxy”, Acta Phys. Sin., 62 (2013) 178103.
107 L. J. Zhu, D. Pan, S. H. Nie, J. Lu, J. H. Zhao*, “Tailoring Magnetism of Multifunctional MnxGa Films with Giant Perpendicular Anisotropy”, Appl. Phys. Lett., 102 (2013) 132403.
108 S. H. Nie, L. J. Zhu, J. Lu, D. Pan, H. L. Wang, X. Z. Yu, J. X. Xiao, J. H. Zhao*, “Perpendicularly Magnetized τ-MnAl (001) Thin Films Epitaxied on GaAs”, Appl. Phys. Lett., 102 (2013) 152405.
109 S. H. Nie, Y. Y. Chin, W. Q. Liu, J. C. Tung, J. Lu, H. J. Lin, G. Y. Guo*, K. K. Meng, L. Chen, L. J. Zhu, D. Pan, C. T. Chen, Y. B. Xu, W. S. Yan, J. H. Zhao*, “Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga, Mn)As Bilayer”, Phys. Rev. Lett., 111 (2013) 027203.
110 L. J. Zhu, S. H. Nie, K. K. Meng, D. Pan, J. H. Zhao*, H. Z. Zheng, “Multifunctional L10-Mn1.5Ga Films with Ultrahigh Coercivity, Giant Perpendicular Magnetocrystalline Anisotropy and Large Magnetic Energy Product”, Adv. Mater., 24 (2012) 4547.
……
科研活动
科研项目
（ 2 ） 多谱段锑化物量子结构材料集成与外延, 负责人, 中国科学院计划, 2023-09--2028-08
（ 3 ） 中国科学院半导体研究所青年人才推进计划A类项目：双生长腔室分子束外延系统, 负责人, 研究所自主部署, 2023-09--2025-09
（ 4 ） 中国科学院半导体研究所自主部署“优秀青年人才稳定支持”项目, 负责人, 中国科学院计划, 2023-06--2025-06
（ 5 ） 中科院人才专项：中国科学院“青年创新促进会优秀会员”项目, 负责人, 中国科学院计划, 2022-01--2024-12
（ 6 ） 高质量窄禁带半导体/超导体异质纳米结构的原位分子束外延制备及拓扑量子比特构筑, 负责人, 国家任务, 2021-01--2023-12
（ 7 ） 高质量窄禁带半导体/超导体异质结纳米线网络的原位分子束外延生长及输运性质, 负责人, 国家任务, 2020-01--2023-12
（ 8 ） 半导体所青年人才推进计划项目：分子束外延系统（改造）, 负责人, 研究所自主部署, 2019-12--2023-12
（ 9 ） 用于拓扑量子计算的窄禁带半导体/超导体异质结纳米线原位分子束外延制备, 负责人, 地方任务, 2019-01--2021-12
（ 10 ） 中科院人才专项：中国科学院“青年创新促进会会员”项目, 负责人, 中国科学院计划, 2017-01--2021-12
（ 11 ） 高质量InAs/GaSb异质结纳米线分子束外延生长及隧穿场效应器件研究, 负责人, 国家任务, 2016-01--2018-12
参与会议
1. 2023年10月，江苏苏州，第15届全国分子束外延学术会议（邀请报告）
2. 2023年7月，宁夏中卫，2023量子信息物理与量子材料高峰论坛（邀请报告）
3. 2023年8月，内蒙古呼和浩特，第五届半导体青年论坛（邀请报告）
4. 2023年4月，上海，中科院青促会化材分会2023年学术年会（邀请报告）
5. 2022年11月，厦门，第二届全国半导体物理青年论坛（邀请报告，线上）
6. 2022年7月，香港，第24届国际高磁场半导体物理学术会议（口头报告，线上）
7. 2021年7月，陕西西安，第23届全国半导体物理学术会议（邀请报告）
8. 2019年9月，郑州大学，2019年中国物理学会秋季年会（口头报告）
9. 2019年9月，意大利比萨，Nanowire Week 2019 （海报）
10. 2019年8月，山东烟台，2019年全国分子束外延学术会议（口头报告）
11. 2019年7月，浙江杭州，2019年全国半导体物理学术会议（口头报告）
12. 2018年9月，大连理工大学，2018年中国物理学会秋季年会（口头报告）
13. 2018年9月，上海，第20届国际分子束外延大会（口头报告）
14. 2018年7月，法国蒙彼利埃，第34届国际半导体物理大会（ICPS2018）（口头报告）
15. 2018年6月，加拿大哈密尔顿，Nanowire Week 2018 （海报）
16. 2017年5月，瑞典Lund大学，Nanowire Week 2017 （口头报告）
17. 2017年5月，中科院大连化物所，第一届能源化学与材料国际青年论坛暨中科院青年创新促进会化学与材料分会2017学术年会（口头报告）
18. 2017年7月， 南京大学， The 1st International Semiconductor Conference for Global Challenges (ISCGC2017) （口头报告）
19. 2017年7月，南京大学，第21届全国半导体物理学术会议 （口头报告）
20. 2017年9月，日本仙台，2017 International Conference on Solid State Devices and Materials （口头报告）
21. 2016年11月，美国波士顿，2016年美国材料研究学会秋季年会（口头报告）
22. 2016年9，北京工业大学，2016年中国物理学会秋季年会（海报）
23. 2016年8月，北京，第33届国际半导体物理会议（海报）
24. 2015年7月，山西临汾，第20届全国半导体物理学术会议 （口头报告）
25. 2015年7月，内蒙古呼和浩特，2015 International Workshop on Nanomaterials & Nanodevices（邀请报告）
指导学生
现指导学生
殷钰坤 硕士研究生 085600-材料与化工
李东海 硕士研究生 080501-材料物理与化学
师海彦 博士研究生 085600-材料与化工
侯曦宇 博士研究生 080501-材料物理与化学
博士后
钟青（2023年入站）
硕士生
殷钰坤（2022）
李东海（2024）
博士生
师海彦（2024，直博生）
侯曦宇（2024，博士生）
贺凤悦（联合指导，博士在读）
刘磊（联合指导，2023年博士毕业）
卓然（联合指导，2023年博士毕业）
文炼均（联合指导，2022年博士毕业）
廖敦渊（联合指导，2022年博士毕业）