基本信息
潘东  男  硕导  中国科学院半导体研究所
电子邮件: pandong@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号中国科学院半导体研究所7号科研楼203室
邮政编码: 100083

研究领域

高品质窄禁带半导体纳米线/片及其异质结构的分子束外延可控生长;基于半导体纳米线/片及其异质结构的拓扑量子计算;高性能窄禁带半导体电子及量子器件。


招生信息

招收硕士生


招生专业
080501-材料物理与化学
招生方向
低维半导体物理
拓扑量子计算

教育背景

2011-09--2014-06   中国科学院半导体研究所   理学博士
学历

2011-09--2014-06 中国科学院半导体研究所 博士研究生 


学位
中国科学院半导体研究所 -- 理学博士学位


工作经历



工作简历
2020-11~现在, 北京量子信息科学研究院, 研究员(兼聘)
2018-01~现在, 中国科学院半导体研究所, 副研究员
2014-07~2017-12,中国科学院半导体研究所, 助理研究员
社会兼职
2022-06-13-今,SCI杂志评审人, 担任Adv. Mater.、J. Appl. Phys.、IEEE J. Quantum Elect.、Chin. Phys. B、Appl. Surf. Sci.、J. Phys. D: Appl. Phys.、Nanoscale、Nanotechnology、Mater. Chem. Phys.、RSC Adv.、Nanoscale Res. Lett.、J. Cryst. Growth、J. Magn. Magn. Mater.、中国科学:物理学 力学 天文学及发光学报等20余种杂志的审稿人。
2020-11-01-今,北京量子信息科学研究院, 兼聘研究员

教授课程

半导体自旋电子材料与器件基础

专利与奖励


2017年入选中科院青年创新促进会会员;

2021年入选中科院青年创新促进会优秀会员;

2021年入选半导体所特聘骨干研究岗位。


  

专利成果
( 1 ) 一种窄禁带半导体/超导体异质结纳米线的制备方法, 发明专利, 2020, 第 1 作者, 专利号: CN111762755A

( 2 ) 一种半导体/超导体异质结纳米线网络的制备方法, 发明专利, 2020, 第 1 作者, 专利号: CN111704105A

( 3 ) 硅衬底上立式GaSb纳米线及其制备方法, 发明专利, 2019, 第 1 作者, 专利号: CN110504159A

( 4 ) 圆晶级大面积半导体纳米片及其制备方法, 发明专利, 2019, 第 1 作者, 专利号: CN109962010A

( 5 ) 立式III-V族锑化物半导体单晶薄膜的制备方法, 发明专利, 2018, 第 1 作者, 专利号: CN105405745B

( 6 ) 一种高晶体质量超细砷化铟纳米线生长方法, 发明专利, 2013, 第 2 作者, 专利号: CN103060905A

出版信息

1         D. Pan, M. Q. Fu, X. Z. Yu, X. L. Wang, L. J. Zhu, S. H. Nie, S. L. Wang, Q. Chen, P. Xiong, S. von Molnár, J. H. Zhao*, “Controlled Synthesis of Phase-Pure InAs Nanowires on Si (111) by Diminishing the Diameter to 10 nm”, Nano Lett., 14 (2014) 1214.

2         D. Pan, D. X. Fan, N. Kang, J. H. Zhi, X. Z. Yu, H. Q. Xu*, J. H. Zhao*, “Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets”, Nano Lett., 16 (2016) 834.

3         D. Pan, J. Y. Wang, W. Zhang, L. J. Zhu, X. J. Su, F. R. Fan, Y. H. Fu, S. Y. Huang, D. H. Wei, L. J. Zhang, M. L. Sui, A. Yartsev, H. Q. Xu, J. H. Zhao*, “Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale”, Nano Lett., 19 (2019) 1632.

4         D. Pan#, H. D. Song#, S. Zhang#, L. Liu, L. J. Wen, D. Y. Liao, R. Zhuo, Z. C. Wang, Z. T. Zhang, S. Yang, J. H. Ying, W. T. Miao, R. N. Shang, H. Zhang*, J. H. Zhao*, “In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices, Chin. Phys. Lett. (Express Letters), 39 (2022) 058101.

5         S. Zhang#, Z. C. Wang#, D. Pan#, H. Z. Li, S. Lu, Z. L. Li, G. Zhang, D. H. Liu, Z. Cao, L. Liu, L. J. Wen, D. Y. Liao, R. Zhuo, R. N. Shang, D. E. Liu*, J. H. Zhao*, H. Zhang*, “Suppressing Andreev Bound State Zero Bias Peaks Using a Strongly Dissipative Lead, Phys. Rev. Lett., 128 (2022) 076803.

6         X. M. Yuan#*, D. Pan#, Y. J. Zhou, X. T. Zhang, K. Peng, B. J. Zhao, M. T. Deng*, J. He*, H. H. Tan, C. Jagadish, “Selective Area Epitaxy of III-V Nanostructure Arrays and Networks: Growth, Applications and Future Directions”, Applied Physics Reviews, 8 (2021) 021302.

7         J. B. He#, D. Pan#, G. Yang, M. L. Liu, J. H. Ying, Z. Z. Lyu, J. Fan, X. N. Jing, G. T. Liu, B. Lu, D. E. Liu, J. H. Zhao*, L. Lu*, F. M. Qu*, “Nonequilibrium Interplay Between Andreev Bound States and Kondo Effect”, Phys. Rev. B, 102 (2020) 075121.

8         L. X. Li, D. Pan*, Y. Z. Xue, X. L. Wang, M. L. Lin, D. Su, Q. L. Zhang, X. Z. Yu, H. So, D. H. Wei, B. Q. Sun, P. H. Tan, A. L. Pan, J. H Zhao*, “Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy”, Nano Lett., 17 (2017) 622.

9         S. K. Zhang, H. X. Jiao, X. D. Wang, Y. Chen, H. Wang, L. Q. Zhu, W. Jiang, J. J. Liu, L. X. Sun, T. Lin, H. Shen, W. D. Hu, X. J. Meng*, D. Pan*, J. L. Wang*, J. H. Zhao, J. H. Chu, “Highly Sensitive InSb Nanosheets Infrared Photodetector Passivated by Ferroelectric Polymer”, Adv. Funct. Mater., 30 (2020) 2006156.

10      L. J. Wen, D. Pan*, L. Liu, S. C. Tong, R. Zhuo, J. H. Zhao*, “Large-Composition-Range Pure-Phase Homogeneous InAs1-xSbx Nanowires”, J. Phys. Chem. Lett., 13 (2022) 598.

11      X. Z. Wang, D. Pan*, M. Sun, F. J. Lyu, J. H. Zhao, Q. Chen*, “High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity- Dependent Negative Photoconductivity”, ACS Appl. Mater. Interfaces, 13 (2021) 26187.

12      L. J. Wen, D. Pan*, D. Y. Liao, J. H. Zhao, “Foreign-Catalyst-Free GaSb Nanowires Directly Grown on Cleaved Si Substrates by Molecular-Beam Epitaxy”, Nanotechnology, 31 (2020) 155601.

13      L. J. Wen, L. Liu, D. Y. Liao, R. Zhuo, D. Pan*, J. H. Zhao, “Silver-Assisted Growth of High-Quality InAs1-xSbx Nanowires by Molecular-Beam Epitaxy”, Nanotechnology, 31 (2020) 465602.

14      H. So, D. Pan*, L. X. Li, J. H. Zhao*, “Foreign-Catalyst-Free Growth of InAs/InSb Axial Heterostructure Nanowires on Si (111) by Molecular-Beam Epitaxy”, Nanotechnology, 28 (2017) 135704.

15      L. X. Li, D. Pan*, H. So, X. L. Wang, Z. F. Yu, J. H. Zhao*,GaAsSb/InAs Core-Shell Nanowires Grown by Molecular-Beam Epitaxy”, J. Alloys Compd., 724 (2017) 659.

16      D. Pan, S. L. Wang*, H. L. Wang, X. Z. Yu, X. L. Wang, J. H. Zhao*, “Structure and Magnetic Properties of (In, Mn)As Based Core-Shell Nanowires Grown on Si (111) by Molecular-Beam Epitaxy”, Chin. Phys. Lett., 31 (2014) 078103.

17      D. Pan, J. K. Jian, A. Ablat, J. Li, Y. F. Sun, R. Wu*, “Structure and Magnetic Properties of Ni-Doped AlN Films”, J. Appl. Phys., 112 (2012) 053911.

18      D. Pan, J. K. Jian, Y. F. Sun, R. Wu*, “Structure and Magnetic Characteristics of Si-Doped AlN Films”, J. Alloys Compd., 519 (2012) 41.

19      L. M. Ma, P. Wang*, X. T. Yin, Y. L. Liang, S. Liu, L. X. Li, D. Pan*, Z. Yao, B. B. Liu, J. H. Zhao, “Enhancing the Light Emission of GaAs Nanowires by Pressure-Modulated Charge Transfer”, Nanoscale Adv., 2 (2020) 2558.

20      Y. L. Liang, Z. Yao, X. T. Yin, P. Wang*, L. X. Li, D. Pan*, H. Y. Li, Q. J. Li, B. B. Liu, J. H. Zhao, Semiconductor-Metal Transition in GaAs Nanowires Under High Pressure”, Chin. Phys. B, 28 (2019) 076401.

21      L. X. Li, D. Pan*, X. Z. Yu, H. So, J. H. Zhao*,Manipulation of Morphology and Structure of the Top of GaAs Nanowires Grown by Molecular-Beam Epitaxy”, J. Semicond., 38 (2017) 103001.

22      N. Kang*, D. X. Fan, J. H. Zhi, D. Pan, S. Li, C. Wang, J. K. Guo, J. H. Zhao*, H. Q. Xu*, “Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets”, Nano Lett., 19 (2019) 561.

23      J. Y. Wang, S. Y. Huang*, G. Y. Huang, D. Pan, J. H. Zhao, H. Q. Xu*, “Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire”, Nano Lett., 17, (2017) 4158.

24      J. Y. Wang, G. Y. Huang, S. Y. Huang*, J. H. Xue, D. Pan, J. H. Zhao*, H. Q. Xu*, “Anisotropic Pauli Spin-Blockade Effect and Spin-Orbit Interaction Field in an InAs Nanowire Double Quantum Dot”, Nano Lett., 18 (2018) 4741.

25      M. Q. Fu, Z. Q. Tang, X. Li, Z. Y. Ning, D. Pan, J. H. Zhao, X. L. Wei, Q. Chen*, “Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires”, Nano Lett., 16, (2016) 2478.

26      X. Li, X. L. Wei*, T. T. Xu, D. Pan, J. H. Zhao, Q. Chen*, “Remarkable and Crystal-Structure-Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires”, Adv. Mater., 27 (2015) 2852.

27      X. Z. Yu, H. L. Wang, D. Pan, J. H. Zhao*, J. Misuraca, S. von Molnár, P. Xiong, “All Zinc-Blende GaAs/(Ga, Mn)As Core-Shell Nanowires with Ferromagnetic Ordering”, Nano Lett., 13 (2013) 1572.

28      Q. Sun, D. Pan, X. T. Zhang, J. H. Zhao, P. P. Chen, W. Lu, J. Zou*, “Axiotaxy Driven Growth of Belt-Shaped InAs Nanowires in Molecular Beam Epitaxy”, Nano Res., 14 (2021) 2330.

29      Q. Sun, D. Pan, M. Li, J. H. Zhao, P. P. Chen, W. Lu, J. Zou*, “In Situ TEM Observation of the Vapor-Solid-Solid Growth of <00-1> InAs Nanowires”, Nanoscale, 12 (2020) 11711.

30      X. Z. Wang, D. Pan, Y. X. Han, M. Sun, J. H. Zhao, Q. Chen*, “Vis-IR Wide-Spectrum Photodetector at Room Temperature Based on p-n Junction-Type GaAs1-xSbx/InAs Core-Shell Nanowire” ACS Appl. Mater. Interfaces, 11 (2019) 38973.

31      L. B. Wang, D. Pan, G. Y. Huang, J. H. Zhao, N. Kang*, H. Q. Xu, “Crossover from Coulomb Blockade to Ballistic Transport in InAs Nanowire Devices” Nanotechnology, 30 (2019) 124001.

32      S. C. Tong, D. Pan, X. L. Wang, Z. F. Yu, Y. H. Xu, D. H. Wei*, “Unsaturated Linear Magnetoresistance Effect in High-Quality Free-Standing InSb Single-Crystal Nanosheets”, J. Phys. D: Appl. Phys., 53 (2020) 18LT04.

33      W. Y. Yang, D. Pan, R. Shen, X. Z. Wang, J. H. Zhao, Q. Chen*, “Suppressing the Excess OFF-State Current of Short-Channel InAs Nanowire Field-Effect Transistors by Nanoscale Partial-Gate”, Nanotechnology, 29 (2018) 415203.

34      M. Q. Fu, D. Pan, Y. J. Yang, T. W. Shi, Z. Y. Zhang, J. H. Zhao, H. Q. Xu, Q. Chen*, “Electrical Characteristics of Field-Effect Transistors Based on Indium Arsenide Nanowire Thinner Than 10 nm”, Appl. Phys. Lett., 105 (2014) 143101.

35      Z. C. Wang, D. Pan, L. Wang*, T. W. Wang, B. Zhao, Y. Wu, M. Yang, X. G. Xu*, J. Miao, J. H. Zhao, Y. Jiang, “Room-Temperature Spin Transport in InAs Nanowire Lateral Spin Valve” RSC Adv., 6 (2016) 75736.

36      L. J. Wen, D. Pan, J. H. Zhao*, “From High-Quality Semiconductor/Superconductor Nanowires to Majorana Zero Mode.”, Acta Phys. Sin., 70 (2021) 058101.

37      J. H. Zhi, N. Kang*, F. Su, D. X. Fan, S. Li, D. Pan, S. Zhao, J. H. Zhao*, H. Q. Xu*, “Coexistence of Induced Superconductivity and Quantum Hall States in InSb Nanosheets”, Phys. Rev B, 99 (2019) 245302.

38      Y. J. Chen, S. Y. Huang, D. Pan, J. H. Xue, L. Zhang, J. H. Zhao*, H. Q. Xu*, “Strong and Tunable Spin-Orbit Interaction in a Single Crystalline InSb Nanosheet”, npj 2D Mater. Appl., 5 (2021) 3.

39      X. M. Wang, S. Y. Huang*, J. Y. Wang, D. Pan, J. H. Zhao, H. Q. Xu, “A Charge Sensor Integration to Tunable Double Quantum Dots on Two Neighboring InAs Nanowires”, Nanoscale, 13 (2021) 1048.

40      J. W. Mu, S. Y. Huang, Z. H. Liu, W. J. Li, J. Y. Wang, D. Pan, G. Y. Huang, J. Chen, J. H. Zhao*, H. Q. Xu*, “A Highly Tunable Quadruple Quantum Dot in a Narrow Bandgap Semiconductor InAs Nanowire”, Nanoscale, 13, (2021) 3983.

41      F. R. Fan, Y. J. Chen, D. Pan, J. H. Zhao, H. Q. Xu*, “Measurements of Spin-Orbit Interaction in Epitaxially Grown InAs Nanosheets”, Appl. Phys. Lett., 117 (2020) 132101.

42      W. J. Li, J. W. Mu, S. Y. Huang, D. Pan, J. H. Zhao, H. Q. Xu*, “Detection of Charge States of an InAs Nanowire Triple Quantum Dot with an Integrated Nanowire Charge Sensor”, Appl. Phys. Lett., 117 (2020) 262102.

43      J. H. Xue, Y. J. Chen, D. Pan, J. Y. Wang, J. H. Zhao, S. Y. Huang*, H. Q. Xu*,Gate Defined Quantum Dot Realized in a Single Crystalline InSb Nanosheet”, Appl. Phys. Lett., 114 (2019) 023108.

44      Y. J. Chen, S. Huang, J. Mu, D. Pan, J. H. Zhao, H. Q. Xu*, “ A Double Quantum Dot Defined by Top Gates in a Single Crystalline InSb Nanosheet”, Chin. Phys. B, 30 (2021) 128501.

45      J. H. Zhi, N. Kang*, S. Li, D. X. Fan, F. Su, D. Pan, S. Zhao, J. H. Zhao, H. Q. Xu*, Supercurrent and Multiple Andreev Reflections in InSb Nanosheet SNS Junctions”, Phys. Status Solidi B, 256 (2019) 1800538.

46      T. Li, R. Shen, M. Sun, D. Pan, J. M. Zhang, J. Xu, J. H. Zhao, Q. Chen*, “Improving the Electrical Properties of InAs Nanowire Field Effect Transistors by Covering Them with Y2O3/HfO2 Layers”, Nanoscale, 10 (2018) 18492.

47      J. Y. Wang, S. Y. Huang*, Z. J. Lei, D. Pan, J. H. Zhao, H. Q. Xu*, “Measurements of the Spin-Orbit Interaction and Landé g Factor in a Pure-Phase InAs Nanowire Double Quantum Dot in the Pauli Spin-Blockade Regime”, Appl. Phys. Lett., 109 (2016) 053106.

48      B. Y. Feng, S. Y. Huang*, J. Y. Wang, D. Pan, J. H. Zhao, H. Q. Xu*, “Schottky Barrier Heights at the Interfaces Between Pure-Phase InAs Nanowires and Metal Contacts”, J. Appl. Phys., 119 (2016) 054304.

49       Y. X. Han, X. Zheng, M. Q. Fu, D. Pan, X. Li, Y. Guo, J. H. Zhao, Q. Chen*, “Negative Photoconductivity of InAs Nanowires”, Phys. Chem. Chem. Phys., 18 (2016) 818.

50      X. Z. Yu, L. X. Li, H. L. Wang, J. X. Xiao, C. Shen, D. Pan, J. H. Zhao*, “Two-Step Fabrication of Self-Catalyzed Ga-Based Semiconductor Nanowires on Si by Molecular-Beam Epitaxy”, Nanoscale, 8 (2016) 10615.

51      L. B. Wang, J. K. Guo, N. Kang*, D. Pan, S. Li, D. X. Fan, J. H. Zhao, H. Q. Xu*, “Phase-Coherent Transport and Spin Relaxation in InAs Nanowires Grown by Molecule Beam Epitaxy”, Appl. Phys. Lett., 106 (2015) 173105.

52      T. W. Shi, M. Q. Fu, D. Pan, Y. Guo, J. H. Zhao, Q. Chen*, “Contact Properties of Field-Effect Transistors Based on InAs Nanowire Thinner Than 16 nm”, Nanotechnology, 26 (2015) 175202.

53      Q. Li, S. Y. Huang*, D. Pan, J. Y. Wang, J. H. Zhao, H. Q. Xu*, “Suspended InAs Nanowire Gate-All-Around Field-Effect Transistors”, Appl. Phys. Lett., 105 (2014) 113106. 

54       X. Li, X. L. Wei*, T. T. Xu, Z. Y. Ning, J. P. Shu, X. Y. Wang, D. Pan, J. H. Zhao, T. Yang, Q. Chen*, “Mechanical Properties of Individual InAs Nanowires Studied by Tensile Tests”, Appl. Phys. Lett., 104 (2014) 103110.

55      X. L. Wang*, D. Pan, Q. Q. Zeng, X. Chen, H. L. Wang, D. Zhao, Z. Y. Xu, Q. Q. Yang, J. X. Deng, T. R. Zhai, G. H. Wu, E. K. Liu, J. H. Zhao, “Robust Anomalous Hall Effect and Temperature Driven Lifshitz Transition in Weyl Semimetal Mn3Ge”, Nanoscale, 13 (2021) 2601.

56      X. L. Wang*, C. Zhang, Q. Yang, L. Liu, D. Pan, X. Chen, J. X. Deng, T. R. Zhai, H. X. Deng*, “Manipulation of Crystalline Structure, Magnetic Performance and Topological Feature in Mn3Ge Films”, APL Mater., 9 (2021) 111107.

57      S. Li., J. Lu*, L. J. Wen, D. Pan, H. L. Wang, D. H. Wei, J. H. Zhao, “Unusual Anomalous Hall Effect in a Co2MnSi/MnGa/Pt Trilayer”, Chin. Phys. Lett., 37 (2020) 077303.

58      X. L. Wang, H. L. Wang, D. Pan, T. Keiper, L. X. Li, X. Z. Yu, J. Lu, E. Lochner, S. von Molnár, P. Xiong*, J. H. Zhao*, “Robust Manipulation of Magnetism in Dilute Magnetic Semiconductor (Ga, Mn)As by Organic Molecules”, Adv. Mater., 27 (2015) 8043.

59      H. H. Ren, J. K. Jian, C. Chen, D. Pan, A. Ablat, Y. F. Sun, J. Li, R. Wu*, “Ga-Vacancy-Induced Room-Temperature Ferromagnetic and Adjusted-Band-Gap Behaviors in GaN Nanoparticles”, Appl. Phys. A, 116 (2014) 185.

60       L. J. Zhu, D. Pan, J. H. Zhao*, “Anomalous Hall Effect in Chemically Disordered L10-Mn1.5Ga Films with Variable Chemical Ordering”, Phys. Rev. B, 89 (2014) 220406.

61      L. J. Zhu, D. Pan, S. H. Nie, J. Lu, J. H. Zhao*, “Tailoring Magnetism of Multifunctional MnxGa Films with Giant Perpendicular Anisotropy”, Appl. Phys. Lett., 102 (2013) 132403.

62      S. H. Nie, L. J. Zhu, J. Lu, D. Pan, H. L. Wang, X. Z. Yu, J. X. Xiao, J. H. Zhao*, “Perpendicularly Magnetized τ-MnAl (001) Thin Films Epitaxied on GaAs”, Appl. Phys. Lett., 102 (2013) 152405.

63      S. H. Nie, Y. Y. Chin, W. Q. Liu, J. C. Tung, J. Lu, H. J. Lin, G. Y. Guo*, K. K. Meng, L. Chen, L. J. Zhu, D. Pan, C. T. Chen, Y. B. Xu, W. S. Yan, J. H. Zhao*, “Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga, Mn)As Bilayer”, Phys. Rev. Lett., 111 (2013) 027203.

64      L. J. Zhu, S. H. Nie, K. K. Meng, D. Pan, J. H. Zhao*, H. Z. Zheng, “Multifunctional L10-Mn1.5Ga Films with Ultrahigh Coercivity, Giant Perpendicular Magnetocrystalline Anisotropy and Large Magnetic Energy Product”, Adv. Mater., 24 (2012) 4547.

科研活动

   
科研项目
( 1 ) 高质量InAs/GaSb异质结纳米线分子束外延生长及隧穿场效应器件研究, 主持, 国家级, 2016-01--2018-12
( 2 ) 用于拓扑量子计算的窄禁带半导体/超导体异质结纳米线原位分子束外延制备, 主持, 省级, 2019-01--2021-12
( 3 ) 高质量窄禁带半导体/超导体异质结纳米线网络的原位分子束外延生长及输运性质, 主持, 国家级, 2020-01--2023-12
( 4 ) 半导体所青年人才推进计划项目:分子束外延系统(改造), 主持, 市地级, 2019-12--2023-12
( 5 ) 中科院人才专项:中国科学院“青年创新促进会优秀会员”项目, 主持, 部委级, 2022-01--2024-12
( 6 ) 中科院人才专项:中国科学院“青年创新促进会会员”项目, 主持, 部委级, 2017-01--2021-12
( 7 ) 高质量窄禁带半导体/超导体异质纳米结构的原位分子束外延制备及拓扑量子比特构筑, 主持, 国家级, 2021-01--2023-12
参与会议

1. 2021年7月,陕西西安,第23届全国半导体物理学术会议(邀请报告)

2. 2019年9月,郑州大学,2019年中国物理学会秋季年会(口头报告)

3.  2019年9月,意大利比萨,Nanowire Week 2019 (海报)

4. 2019年8月,山东烟台,2019年全国分子束外延学术会议(口头报告)

5. 2019年7月,浙江杭州,2019年全国半导体物理学术会议(口头报告)

6. 2018年9月,大连理工大学,2018年中国物理学会秋季年会(口头报告)

7. 2018年9月,上海,第20届国际分子束外延大会(口头报告)

8. 2018年7月,法国蒙彼利埃,第34届国际半导体物理大会(ICPS2018)(口头报告)

9. 2018年6月,加拿大哈密尔顿,Nanowire Week 2018 (海报)

10. 20175月,瑞典Lund大学,Nanowire Week 2017 (口头报告) 

11. 20175月,中科院大连化物所,第一届能源化学与材料国际青年论坛暨中科院青年创新促进会化学与材料分会2017学术年会(口头报告)

12. 20177月, 南京大学, The 1st International Semiconductor Conference for Global Challenges (ISCGC2017) (口头报告)

13. 20177月,南京大学,第21届全国半导体物理学术会议 (口头报告)

14. 20179月,日本仙台,2017 International Conference on Solid State Devices and Materials (口头报告)

15. 201611月,美国波士顿,2016年美国材料研究学会秋季年会(口头报告)

16. 20169,北京工业大学,2016年中国物理学会秋季年会(海报)

17. 20168月,北京,第33届国际半导体物理会议(海报)

18. 20157月,山西临汾,第20届全国半导体物理学术会议 (口头报告)

19. 20157月,内蒙古呼和浩特,2015 International Workshop on Nanomaterials & Nanodevices(邀请报告)