（1）感存算一体红外光电器件与芯片

（2）红外光电探测器物理

（3）铟砷基短中波红外探测材料、器件及其焦平面

欢迎物理、电子科学与技术、材料科学与工程、计算机等专业的本科生、硕士/博士研究生以及博士后加入我们课题组！

招生方向：

（1）红外光电探测器：2-3名研究生、1-2名博士后

• 红外探测器光电联合调控

• 范德华异质结红外探测器与集成

（2）人工智能红外视觉芯片：2-3名研究生、1-2名博士后

• 可重构红外光电探测：红外探测多物理场调控机制，可重构探测器内计算硬件架构与电路。

• 感存算一体化集成创新范式：感存算一体化硬件堆叠架构及其与人工智能算法相互兼容方案，解决感存算融合芯片关键共性技术问题。

080903-微电子学与固体电子学
070205-凝聚态物理

2014-08--2018-05   美国密歇根州立大学   电子工程、博士
2011-09--2014-06   中国科学院上海技术物理研究所   凝聚态物理、硕士
2007-09--2011-06   山东大学   应用物理、学士

   

2020-09~现在, 中国科学院上海技术物理研究所, 研究员
2018-05~2020-07,美国宾夕法尼亚大学, 电子工程、博士后

Representative Publications

5. Reconfigurable, non-volatile neuromorphic photovoltaics, Nature Nanotechnology, 2023, 18, 1303-1310. (通讯/一作)

4. Giant bulk photovoltaic effect in one-dimensional van der Waals grain boundary, Nature Communications, 2024, 15: 501.(通讯)

3. Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon, Nature Electronics, 2022, 5, 744-751.(通讯/一作)

2. Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection, Science Advances, 2022, 8, eabq1781.(通讯)

1. Graphene/MoS2/graphene photo-memristors with tunable non-volatile responsivities for neuromorphic vision processing, Light: Science & Applications, 2023, 12:33. (ESI Highly Cited Paper)(通讯)

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Full Publications

73. Self-Powered and Reconfigurable Double-Terminal MoS2 Photodetector for Image Recognition, Nano Lett. 2025, 25, 9, 3515–3523(通讯)

72. Critical band-to-band-tunnelling based optoelectronic memory, Light Sci Appl 14, 72 (2025)(一作)

71. Ultrasensitive and Fast Gas Detection Based on Room-Temperature Indium Arsenide Mid-Wavelength Infrared Photodetectors, Advanced Functional Materials 2025(通讯)

70. A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors, Chip, 3, 4, 2024(通讯)

69. Programmable nonlinear optical neuromorphic computing with bare 2D material MoS2, Nature Communications, 15, 10290 (2024)

68. Infrared optoelectronics in twisted black phosphorus, Nature Communications, 15, 8834 (2024)(一作)

67. Recent Advances in the A-Site Cation Engineering of Lead Halide Perovskites, Advanced Optical Materials, 12, 30, 2024(通讯)

66. Deep multiband photodetection enabled by reconfigurable 2D/3D heterointegration band alignment, Optica, 2024, accepted. (通讯)

65. Horizontally Oriented Growth of Highly Conductive MoO2 Nanobelts on Sapphire, Crystal Growth & Desgin, 2024, accepted. (通讯)

64. High performance low power multilevel oxide based RRAM devices based on TiON/GaO hybrid structure, 2024 Applied Physics Letters. (通讯)

63. In-situ edge extraction enabled by reconfigurable van der Waals infrared photodetectors, 2024, Applied Physics Letters. (通讯)

62. Reconfigurable, non-volatile neuromorphic photovoltaics, Nature Nanotechnology, 2023 accepted. (通讯/一作)

61. Giant bulk photovoltaic effect in one-dimensional van der Waals grain boundary, Nature Communications, 2023, accpeted. (通讯)

60. Van der Waals integration of two-dimensional materials and bulk semiconductors for infrared photodetection technology, MRS Bulletin, 2023 (通讯)

59. Floating gate photo-memory devices based on van der Waals heterostructures for neuromorphic image recognition, Applied Physics Letters, 2023 accepted (通讯)

58. High-performance violet phosphorus photodetectors with van der Waals assisted contacts, SCIENCE CHINA Physics, Mechanics & Astronomy, 2023 accepted (通讯)

57. Hybrid bacteriorhodopsin/zinc oxide synaptic photoconductors for bio-compatible neuromorphic devices, Advanced Functional Materials, 2023 accepted (通讯)

56. Gate-tunable van der Waals photodiodes with an ultrahigh peak-to-valley current ratio, Small, 2023 accepted (通讯)

55. Heterojunction infrared photodiodes with high dynamic range based on lead sulfide quantum dot and zinc oxide nanomembrane, IEEE Transactions on Nanotechnology, 2023 accepted (通讯)

54. Graphene/MoS2/graphene photo-memristors with tunable non-volatile responsivities for neuromorphic vision processing, Light: Science & Applications, 2023 accepted (通讯)

53. Greenhouse gas detection based on infrared nanophotonic devices, IEEE Open Journal of Nanotechnology, 2023 accepted. (通讯)

52. Fast near-infrared photodetectors from p-type SnSe nanoribbons, Nanotechnology 2023, 34 245202 (通讯)

51. Robust and Enhanced Short-Wave Near-Infrared Light Emission in Phosphorene through Photon-Activated Oxidation, ACS Photonics, 2022 accepted (通讯)

50. Geometry-asymmetric photodetectors from metal-semiconductor-metal van der Waals heterostructures, Materials Horizons, 2022 accepted (通讯)

49. Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon, Nature Electronics, 2022 accepted. (通讯/一作)

48. Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection, Science Advances, 2022 accepted. (通讯)

47. Direct mapping and characterization of the surface local field in InGaAs/InP avalanche photodetectors, Infrared Physics & Technology, 123, 104162 (2022). (通讯)

46. Controllable carrier polarity in 2D HfS2 (1-x) Te2x for short-wave infrared photodiodes, Infrared Physics & Technology, 123, 104139 (2022). (通讯)

45. MoS2 Nanoribbon Transistor for Logic Electronics, IEEE Transactions on Electron Devices, 69 (6), 3433-3438 (2022).

44. Infrared photodetector based on 2D monoclinic gold phosphide nanosheets yielded from one-step chemical vapor transport deposition, Applied Physics Letters, 120 (13), 131104 (2022).

43. Emerging Single‐Photon Detectors Based on Low‐Dimensional Materials, Small, 18 (5), 2103963 (2022). (通讯)

42. High-detectivity tin disulfide nanowire photodetectors with manipulation of localized ferroelectric polarization field, Nanophotonics, 10 (18), 4637-4644 (2021). (通讯)

41. Controllable doping in 2D layered materials, Advanced Materials, 33 (48), 2104942 (2021).

40. Plasmon-assisted optical critical dimension measurement for three-layer orthogonal metallic gratings, Photonics and Nanostructures-Fundamentals and Applications, 46, 100949 (2021).

39. Ternary 2D Layered Material FePSe3 and Near‐Infrared Photodetector, Advanced Electronic Materials 7 (8), 2100207 (2021).

38. Anisotropic photoresponse of layered rhenium disulfide synaptic transistors, Chinese Physics B 30 (8), 088503 (2021). (通讯)

37. Recent progress on electrical and optical manipulations of perovskite photodetectors, Advanced Science, 8 (14), 2100569 (2021).

36. Narrowing Bandgap of HfS2 by Te Substitution for Short‐Wavelength Infrared Photodetection, Advanced Optical Materials, 9 (11), 2002248 (2021). (通讯)

35. Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies, Nano Research, 14 (6), 1840-1862 (2021).

34. Avalanche photodetectors based on two-dimensional layered materials, Nano Research, 14 (6), 1878-1888 (2021). (通讯)

33. Unipolar barrier photodetectors based on van der Waals heterostructures, Nature Electronics, 4 (5), 357-363 (2021).

32. Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory, Nano Letters, 21 (9), 3753-3761 (2021).

31. Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition, Science Advances, 7 (16), eabf7358 (2021).

30. Direct optoelectronic imaging of 2D semiconductor–3D metal buried interfaces, ACS Nano, 15 (3), 5618-5630 (2021).

29. Determination of dielectric functions and exciton oscillator strength of two-dimensional hybrid perovskites, ACS Materials Letters, 3 (1), 148-159 (2020).

28. Giant gate-tunability of complex refractive index in semiconducting carbon nanotubes, ACS Photonics, 7 (10), 2896-2905 (2020).

27. Hybrid exciton-plasmon-polaritons in van der Waals semiconductor gratings, Nature Communications, 11 (1), 1-9 (2020).

26. Gate-tunable semiconductor heterojunctions from 2D/3D van der Waals interfaces, Nano Letters, 20 (4), 2907-2915 (2020).

25. Strong-Coupling of Hybrid Quasiparticles in Excitonic-Dielectric Gratings, Bulletin of the American Physical Society, 65 (2020).

24. High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region, Nature Communications, 10 (1), 1-8 (2019).

23. Screen‐printed soft capacitive sensors for spatial mapping of both positive and negative pressures, Advanced Functional Materials, 29 (23), 1809116 (2019).

22. Black phosphorus electronic and optoelectronic devices, 2D Materials, 6 (3), 032003 (2019). (通讯)

21. Fully printed flexible dual-gate carbon nanotube thin-film transistors with tunable ambipolar characteristics for complementary logic circuits, ACS Nano, 12 (11), 11572-11578 (2018).

20. Direct printing for additive patterning of silver nanowires for stretchable sensor and display applications, Advanced Materials Technologies, 3 (2), 1700232 (2018).

19. Single pixel black phosphorus photodetector for near‐infrared imaging, Small, 14 (2), 1702082 (2018). (一作)

18. Vertically stacked and self-encapsulated van der Waals heterojunction diodes using two-dimensional layered semiconductors, ACS Nano, 11 (10), 10472-10479 (2017). (一作)

17. Fully Printed Silver‐Nanoparticle‐Based Strain Gauges with Record High Sensitivity, Advanced Electronic Materials, 3 (7), 1700067 (2017).

16. Fully printed flexible carbon nanotube photodetectors, Applied Physics Letters, 110 (12), 123105 (2017).

15. Ultrathin MoO2 nanosheets with good thermal stability and high conductivity, AIP Advances, 7 (2), 025015 (2017).

14. Photothermal Effect Induced Negative Photoconductivity and High Responsivity in Flexible Black Phosphorus Transistors, ACS Nano, 11 (6), 6048–6056 (2017). (一作)

13. Air-Stable Humidity Sensor Using Few-Layer Black Phosphorus, ACS Applied Materials & Interfaces, 9, 10019-10026 (2017). (一作)

12. Fully printed stretchable thin-film transistors and integrated logic circuits, ACS Nano, 10 (12), 11459-11468 (2016).

11. Black Phosphorus Schottky Diodes: Channel Length Scaling and Application as Photodetectors, Advanced Electronic Materials, 2, 1500346 (2016). (一作)

10. Capacitance-voltage characteristics of thin-film transistors fabricated with solution-processed semiconducting carbon nanotube networks, Nanoscale Research Letters 10 (1), 1-6 (2015).

9. Ultrashort channel length black phosphorus field-effect transistors, ACS Nano, 9 (9), 9236-9243 (2015). (一作)

8. Fully printed foldable integrated logic gates with tunable performance using semiconducting carbon nanotubes, Advanced Functional Materials 25 (35), 5698-5705 (2015).

7. Surface Plasmon‐Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays, Small, 11 (20), 2392-2398 (2015). (一作)

6. High‐responsivity graphene/InAs nanowire heterojunction near‐infrared photodetectors with distinct photocurrent on/off ratios, Small, 11 (8), 936-942 (2015). (一作)

5. Bolometric-Effect-Based Wavelength-Selective Photodetectors Using Sorted Single Chirality Carbon Nanotubes, Scientific Reports, 5, 17883 (2015).

4. Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature, Advanced Materials, 26 (48), 8203-8209 (2014).

3. Single InAs nanowire room-temperature near-infrared photodetectors, ACS Nano, 8 (4), 3628-3635 (2014). (一作)

2. High-mobility transparent amorphous metal oxide/nanostructure composite thin film transistors with enhanced-current paths for potential high-speed flexible electronics, Journal of Materials Chemistry C, 2 (7), 1201-1208 (2014).

1. Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain, Optical and Quantum Electronics, 45 (7), 713-720 (2013).

已指导学生

郝春慧  硕士研究生  085400-电子信息  

王昊  博士研究生  080903-微电子学与固体电子学  

现指导学生

李雨桐  硕士研究生  085400-电子信息  

孙聚一  硕士研究生  085400-电子信息  

林宏忆  硕士研究生  085400-电子信息  

徐敏霞  硕士研究生  085400-电子信息  

王金津  博士研究生  080903-微电子学与固体电子学  

董祎  硕士研究生  080903-微电子学与固体电子学  

李唐鑫  博士研究生  080903-微电子学与固体电子学  

佘宜洪  博士研究生  080903-微电子学与固体电子学  

方悦悦  硕士研究生  080903-微电子学与固体电子学  

蒋羽  硕士研究生  080903-微电子学与固体电子学  

张吉悦  硕士研究生  085408-光电信息工程  

郭恒睿  硕士研究生  085408-光电信息工程  

石祥阳  硕士研究生  085408-光电信息工程  

赵莹滢  硕士研究生  080902-电路与系统