马英杰 中国科学院上海技术物理研究所 研究员 博导
电子邮件: mayingjie@mail.sitp.ac.cn
通信地址: 上海市玉田路500号
邮政编码: 200083
研究领域
主要研究方向为短波红外探测器材料与器件物理、新原理光电器件、单光子雪崩探测器、焦平面探测器组件、性能测试表征分析等。主持国家自然科学基金面上、国家某部委重大基础研究、国家某部委173基础加强、中科院重点部署等项目或课题。参与承担国家重点研发计划、上海市重大基础研究、民口973等项目。在Advanced Optical Materials、IEEE Journal of Selected Topics on Quantum Electronics、IEEE Journal of Lightwave Technology等期刊上发表第一或通讯作者论文31篇,合作发表论文100余篇,它引超650次,H因子14。申请发明专利29件,已授权13件,4项已实现成果转化。出版《半导体光谱测试方法与技术》和《硅锗低维材料可控生长》专著2部。
入选上海市青年科技启明星(2021),IEEE国际电气与电子工程师协会高级会员(2021),所启明星研究员(2023)。
招生信息
招生专业
招生方向
教育背景
工作经历
工作简历
社会兼职
2021-01-31-2025-05-31,Electronics, Topic Editor
专利与奖励
奖励信息
专利成果
出版信息
(1) Yingjie Ma; Jingxian Bao; Mengxuan Liu; Lixia Zheng; Haiyong Zhu; Junliang Liu; Yakui Dong; Wei Kong; Ruikai Xue; Yi Gu; Genghua Huang; Weifeng Sun; Xue Li; Haimei Gong; Jiaxiong Fang; 256×2 InGaAsP/InP Geiger-mode avalanche photodiode arrays with a triple-stage timing to digital converter, IEEE Journal of Selected Topics in Quantum Electronics, 2025, 31(5)
(2) Yingjie Ma; Yi Gu; Xue Li; Bo Yang; Xiumei Shao; Tao Li; Yonggang Zhang; Haimei Gong; Jiaxiong Fang; InGaAsP/InP Geiger-Mode Avalanche PhotodiodeTowards Sub-kHz Dark Count Rate, IEEE Journal of Lightwave Technology, 2022, 40(22): 7364-7374
(3) Yingjie Ma; Xue Li; Xiumei Shao; Shuangyan Deng; Jifeng Cheng; Yi Gu; Yage Liu; Yu Chen; Xianliang Zhu; Tao Li; Yonggang Zhang; Haimei Gong; Jiaxiong Fang; 320×256 Extended Wavelength InxGa1-xAs/InP Focal Plane Arrays: Dislocation Defect, Dark Signal and Noise, IEEE Journal of Selected Topics in Quantum Electronics, 2021, 28(2)
(4) Qi Wang; Yingjie Ma; Bowen Liu; Runze Xia; Guixue Zhang; Yi Gu; Xue Li; Planar InGaAs Avalanche Photodiode With Multi-Stage InAlAs/InAlGaAs Multiplication Structure, IEEE Journal of Quantum Electronics, 2025, 61(1) (通讯作者 )
(5) Songyang Wang; Yingjie Ma; Yage Liu; Hongzhen Wang; Shuangyan Deng; Yi Gu; Bowen Liu; Tao Li; Xiumei Shao; Xue Li; Haimei Gong; Dislocation Evolvement in Metamorphic In0.83Ga0.17As/InP Photodetectors Through Ex-Situ Rapid Thermal Annealing, IEEE Journal of Quantum Electronics, 2022, 58(3): 1-7 (通讯作者 )
(6) Yingjie Ma; Yonggang Zhang; Yi Gu; Xingyou Chen; Peng Wang; Borchau Juang; Alan Farrell; Baolai Liang; Diana L. Huffaker; Yanhui Shi; Wanyan Ji; Ben Du; Suping Xi; Hengjing Tang; Jiaxiong Fang; Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications, Advanced Optical Materials, 2017, 5(9) (期刊论文)
(7) Yingjie Ma; Shuangyan Deng; Jifeng Cheng; Yi Gu; Yage Liu; Yonggang Zhang; Xiumei Shao; Xue Li; Haimei Gong; Jiaxiong Fang; Towards Surface Leakage Free High Fill-Factor Extended Wavelength InGaAs Focal-Plane Arrays, IEEE Journal of Quantum Electronics, 2019, 55(6)
(8) Yingjie Ma; Shufan Huang; Cheng Zeng; Tianyuan Zhou; Zhenyang Zhong; Tong Zhou; Yongliang Fan; Xinju Yang; Jinsong Xia; Zuimin Jiang; Towards controllable growth of self-assembled SiGe single and double quantum dot nanostructures, Nanoscale, 2014, 6(8)
(9) Yingjie Ma; Yi Gu; Yonggang Zhang; Xingyou Chen; Suping Xi; Zoltan Boldizsar; Li Huang; Li Zhou; Carrier scattering and relaxation dynamics in n-type In0.83Ga0.17As as a function of temperature and doping density, Journal of Materials Chemistry C, 2015, 3(无): 2872-2880
(10) Yingjie Ma; Yonggang Zhang; Yi Gu; Xingyou Chen; Yanhui Shi; Wanyan Ji; Suping Xi; Ben Du; Hengjing Tang; Yongfu Li; Jiaxiong Fang; 2.25 um Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP, IEEE Photonics Technology Letters, 2017, 29(1): 55-58
(11) Yingjie Ma; Yonggang Zhang; Yi Gu; Li Zhou; Xingyou Chen; Suping Xi; H.S.B.Y. Li; Low operating voltage and small gain slope of InGaAs APDs with p-type multiplication layer, IEEE Photonics Technology Letters, 2015, 27(6): 661-664
(12) Wu, Qiong; Ma, Yingjie; Bao, Jingxian; Yang, Liyi; Deng, Shuangyan; He, Yiwei; Zhai, Yueqi; Xu, Qinfei; Liu, Junliang; Zheng, Lixia; Li, Xue; Planar InGaAs/InP Avalanche Photodiode With a Triple-Step Diffusion Junction, IEEE Journal of Quantum Electronics, 2025, 61(6) (通讯作者 )
(13) Yage Liu; Yingjie Ma; Xue Li; Yi Gu; Yonggang Zhang; Haimei Gong; Jiaxiong Fang; Surface Leakage Behaviors of 2.6 mu m In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth, IEEE Journal of Quantum Electronics, 2020, 56(2) (通讯作者 )
(14) 马英杰; 蒋最敏; 周通; 钟振扬; 硅锗低维材料可控生长, 科学出版社, 2021 (学术专著)
(15) 张永刚; 顾溢; 马英杰; 半导体光谱测试方法与技术, 科学出版社, 2016 (学术专著)