080903-微电子学与固体电子学
0805Z2-半导体材料与器件
080901-物理电子学

半导体物理；半导体材料
半导体光电器件；半导体工艺
红外探测器；焦平面探测器

2009-09--2014-06   复旦大学   博士
2005-09--2009-06   华东理工大学   本科

   

2023-09~现在, 中国科学院上海技术物理研究所, 启明星研究员
2018-09~现在, 中国科学院上海技术物理研究所, 副研究员
2016-07~2018-03,University of California, Los Angeles, Visiting Scholar
2014-07~2018-08,中国科学院上海微系统与信息技术研究所, 助理研究员/副研究员

2021-02-01-今,Electronics, Topic Editor

   

（1） 2-3 微米波段InP 基无锑量子阱激光器材料、器件及应用, 三等奖, 省级, 2015

[1] 马英杰, 王嵩阳, 李雪, 龚海梅. 一种共栅控的铟镓砷阵列光电探测器结构. CN: CN114551488A, 2022-05-27.

[2] 李雪, 刘雅歌, 马英杰, 顾溢, 李淘. 一种宽谱铟镓砷焦平面的结构及其制备方法. CN: CN114551618A, 2022-05-27.

[3] 徐红艳, 莫德锋, 马英杰, 李雪, 龚海梅. 一种用于微透镜阵列与芯片光敏元焦平面有源对准装置. CN: CN113504611A, 2021-10-15.

[4] 马英杰, 顾溢, 邵秀梅, 李雪, 龚海梅. 一种高均匀性单光子面光源的产生装置. CN: CN110927981A, 2020-03-27.

[5] 顾溢, 王红真, 马英杰, 张永刚, 邵秀梅, 李雪, 龚海梅. PIIN型高In组分InGaAs探测器材料结构和制备方法. CN: CN110896114B, 2021-10-01.

[6] 顾溢, 王红真, 杨波, 马英杰, 李淘, 邵秀梅, 李雪, 龚海梅. 一种多层InGaAs探测器材料结构和制备方法. CN: CN110896120A, 2020-03-20.

[7] 顾溢, 王红真, 马英杰, 张永刚, 邵秀梅, 李雪, 龚海梅. 表征InGaAs探测器材料缺陷与器件性能关联性的方法. CN: CN110987981A, 2020-04-10.

[8] 程吉凤, 李雪, 邵秀梅, 邓双燕, 万露红, 李淘, 马英杰, 龚海梅. 一种控制铟镓砷光敏芯片平面度的平衡层结构. CN: CN110491950A, 2019-11-22.

[9] 程吉凤, 李雪, 邵秀梅, 邓双燕, 陈郁, 杨波, 马英杰, 龚海梅. 带有应力平衡层的大规模铟镓砷焦平面探测器及制备方法. CN: CN110444607A, 2019-11-12.

[10] 马英杰, 顾溢, 邵秀梅, 李雪. 一种InGaAs雪崩焦平面探测器的串扰抑制结构. CN: CN110021617A, 2019-07-16.

[11] 马英杰, 顾溢, 邵秀梅, 李雪. 一种宽谱InGaAs雪崩焦平面探测器及其制造方法. CN: CN110047967A, 2019-07-23.

[12] 顾溢, 陈平平, 王文娟, 马英杰, 张永刚, 邵秀梅, 李雪, 龚海梅. 一种雪崩探测器过渡层结构及制备方法. CN: CN109473496A, 2019-03-15.

   

[1] Materials Science in Semiconductor Processing. 2023, 第 6 作者
[2] 曹嘉晟, 李淘, 于一榛, 于春蕾, 杨波, 马英杰, 邵秀梅, 李雪, 龚海梅. 基于锌扩散的InGaAs/InP平面型红外探测器快速热退火研究. 红外与毫米波学报[J]. 2023, 第 6 作者42(5): 634-642, http://journal.sitp.ac.cn/hwyhmb/hwyhmbcn/article/abstract/2022368?st=article_issue.
[3] 程吉凤, 李雪, 邵秀梅, 李淘, 王红真, 马英杰, 杨波, 龚海梅. 截止波长2.2 µm的平面型延伸波长InGaAs探测器. 红外与毫米波学报[J]. 2022, 第 6 作者41(5): 804-809, http://journal.sitp.ac.cn/hwyhmb/hwyhmbcn/article/abstract/2022048?st=article_issue.
[4] 杨瑛, 王红真, 范柳燕, 陈平平, 刘博文, 贺训军, 顾溢, 马英杰, 李淘, 邵秀梅, 李雪. 分子束外延高铟组分InGaAs薄膜研究. 红外与毫米波学报[J]. 2022, 第 8 作者41(6): 987-994, http://lib.cqvip.com/Qikan/Article/Detail?id=7108733219.
[5] Ma, YingJie, Xue Li, xiumei shao, Shuangyan Deng, Jifeng Cheng, Yi Gu, Yage Liu, Yu Chen, Xianliang Zhu, Tao Li, Yonggang Zhang, haimei gong, jiaxiong fang. 320*256 Extended Wavelength InxGa1-xAs/InP Focal Plane Arrays: Dislocation Defect, Dark Signal and Noise. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS[J]. 2022, 第 1 作者120: 105281-105281, 
[6] Ma, Yingjie, Li, Xue, Shao, Xiumei, Deng, Shuangyan, Cheng, Jifeng, Gu, Yi, Liu, Yage, Chen, Yu, Zhu, Xianliang, Li, Tao, Zhang, Yonggang, Gong, Haimei, Fang, Jiaxiong. 320x256 Extended Wavelength InxGa1-xAs/InP Focal Plane Arrays: Dislocation Defect, Dark Signal and Noise. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS[J]. 2022, 第 1 作者28(2): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000700296500003.
[7] Yage Liu, Yingjie Ma, 李雪. Noise behaviors of SWIR InxGa1-xAs/InP focal plane arrays as a function of lattice-mismatch degree. Infrared Physics & Technology[J]. 2022, 第 2 作者  通讯作者  
[8] 黄卫国, 顾溢, 金宇航, 刘博文, 龚谦, 黄华, 王庶民, 马英杰, 张永刚. 采用Ga（In，As）P异变缓冲层的GaP/Si衬底上InAs量子阱. 红外与毫米波学报[J]. 2022, 第 8 作者41(1): 253-261, http://lib.cqvip.com/Qikan/Article/Detail?id=7106726926.
[9] IEEE JOURNAL OF LIGHTWAVE TECHNOLOGY. 2022, 第 1 作者
[10] Liu, Qing, Long, Linhong, Ma, Pengchen, Ma, Yingjie, Leng, Xuebing, Xiao, Jie, Chen, Hui, Deng, Liang. Synthesis, structure, and C-H bond activation reaction of an iron(IV) terminal imido complex bearing trifluoromethyl groups. CELL REPORTS PHYSICAL SCIENCE[J]. 2021, 第 4 作者2(6): http://dx.doi.org/10.1016/j.xcrp.2021.100454.
[11] 刘雅歌, 马英杰, 李雪. High Temperature Behaviors of 1–2.5 μm Extended Wavelength In0.83Ga0.17As Photodetectors on InP Substrate. IEEE JOURNAL OF QUANTUM ELECTRONICS[J]. 2021, 第 2 作者  通讯作者  
[12] 刘煦, 李云铎, 叶联华, 黄张成, 马英杰, 黄松垒, 方家熊. 单光子探测盖革雪崩焦平面用低抖动多相位时钟电路设计. 电子与信息学报[J]. 2021, 第 5 作者43(6): 1565-1573, https://jeit.ac.cn/cn/article/doi/10.11999/JEIT210060.
[13] Li, Yunduo, Ye, Lianhua, Liu, Xu, Huang, Songlei, Ma, Yingjie, Huang, Zhangcheng, Gong, Haimei. A Full CMOS Quenching Circuit With Fuse Protection for InGaAs/InP Single Photon Detectors. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS[J]. 2021, 第 5 作者68(10): 3224-3228, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000698857900011.
[14] 曹嘉晟, 李淘, 王红真, 于春蕾, 杨波, 马英杰, 邵秀梅, 李雪, 龚海梅. 非故意掺杂吸收层InP/InGaAs异质结探测器研究. 红外与激光工程[J]. 2021, 第 6 作者50(11): 62-69, http://lib.cqvip.com/Qikan/Article/Detail?id=7106227630.
[15] Ma, Yingjie, Zhu, Xianliang, Yang, Bo, Cheng, Jifeng, Gu, Yi, Li, Tao, Shao, Xiumei, Li, Xue, Gong, Haimei, Gong, H, Lu, J. Fabrication of highly-uniform indium ball bumps for small unit-cell infrared focal plane arrays. AOPC 2020: INFRARED DEVICE AND INFRARED TECHNOLOGY. 2020, 第 1 作者11563: 
[16] Liu, Yage, Ma, Yingjie, Li, Xue, Gu, Yi, Zhang, Yonggang, Gong, Haimei, Fang, Jiaxiong. Surface Leakage Behaviors of 2.6 mu m In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth. IEEE JOURNAL OF QUANTUM ELECTRONICS[J]. 2020, 第 2 作者  通讯作者  56(2): http://dx.doi.org/10.1109/JQE.2020.2970745.
[17] Zhou, Wenliang, Gao, Kai, Ma, Yingjie, Wang, Le, Wang, Meng, Wei, Fuwen, Nie, Yonggang. Seasonal dynamics of parasitism and stress physiology in wild giant pandas. CONSERVATION PHYSIOLOGY[J]. 2020, 第 3 作者8(1): http://dx.doi.org/10.1093/conphys/coaa085.
[18] Yu, Yizhen, Ma, Yingjie, Gu, Yi, Chen, Yu, Yang, Bo, Cheng, Jifeng, Li, Tao, Li, Xue, Shao, Xiumei, Gong, Haimei. Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays. ACS APPLIED ELECTRONIC MATERIALS[J]. 2020, 第 2 作者2(8): 2558-2564, https://www.webofscience.com/wos/woscc/full-record/WOS:000566338100029.
[19] Ma, Yingjie, Bao, Heng, Bencini, Roberta, Raubenheimer, David, Dou, Hongliang, Liu, Hui, Wang, Sirui, Jiang, Guangshun. Macro-Nutritional Adaptive Strategies of Moose (Alces alces) Related to Population Density. ANIMALS[J]. 2020, 第 1 作者10(1): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000515364400073.
[20] 李雪, 邵秀梅, 李淘, 程吉凤, 黄张成, 黄松垒, 杨波, 顾溢, 马英杰, 龚海梅, 方家熊. 短波红外InGaAs焦平面探测器研究进展. 红外与激光工程[J]. 2020, 第 9 作者49(1): 56-63, http://lib.cqvip.com/Qikan/Article/Detail?id=7101214945.
[21] Wan, Luhong, Shao, Xiumei, Ma, Yingjie, Deng, Shuangyan, Liu, Yage, Cheng, Jifeng, Gu, Yi, Li, Tao, Li, Xue. Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer. INFRARED PHYSICS & TECHNOLOGY[J]. 2020, 第 3 作者109: http://dx.doi.org/10.1016/j.infrared.2020.103389.
[22] Gu, Yi, Huang, Weiguo, Liu, Yage, Ma, Yingjie, Zhang, Jian, Gong, Qian, Zhang, Yonggang, Shao, Xiumei, Li, Xue, Gong, Haimei. Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2020, 第 4 作者120: http://dx.doi.org/10.1016/j.mssp.2020.105281.
[23] He, Wei, Shao, Xiumei, Ma, Yingjie, Gu, Yi, Li, Tao, Yang, Bo, Li, Xue, Gong, Haimei. Ultra-low spectral reflectances of InP Mie resonators on an InGaAs/InP focal plane array. AIP ADVANCES[J]. 2020, 第 3 作者10(6): https://doaj.org/article/1caa9b06a8f24e068b7504d2fff99041.
[24] 师艳辉, 杨楠楠, 马英杰, 顾溢, 陈星佑, 龚谦, 张永刚. 数字递变异变赝衬底上2.6μm In0.83Ga0.17As/InP光电探测器的性能改进. 红外与毫米波学报[J]. 2019, 第 3 作者38(3): 275-280, http://lib.cqvip.com/Qikan/Article/Detail?id=7002197320.
[25] Huang Jian, Chen Baile, Deng Zhuo, Gu Yi, Ma Yingjie, Zhang Jian, Chen Xiren, Shao Jun. Deep levels analysis in wavelength extended InGaAsBi photodetector. 2019, 第 5 作者http://arxiv.org/abs/1906.07352.
[26] Huang, W G, Gu, Y, Chen, X Y, Zhang, J, Gong, Q, Huang, H, Ma, Y J, Zhang, Y G. Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH[J]. 2019, 512: 61-64, http://dx.doi.org/10.1016/j.jcrysgro.2019.02.009.
[27] Gu, Yi, Huang, Weiguo, Yang, Nannan, Ma, Yingjie, Shi, Yanhui, Gong, Qian, Zhang, Jian, Huang, Hua, He, Guixiang, Zhang, Yonggang, Shao, Xiumei, Li, Xue, Gong, Haimei. Monolithically grown 2.5 mu m InGaAs photodetector structures on GaP and GaP/Si (001) substrates. MATERIALS RESEARCH EXPRESS[J]. 2019, 第 4 作者6(7): 
[28] Shi YanHui, Yang NanNan, Ma YingJie, Gu Yi, Chen XingYou, Gong Qian, Zhang YongGang. Improved performances of 2. 6 mu m In0.83Ga0.17 As/InP photodetectors on digitally-graded metamorphic pseudo-substrates. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2019, 第 3 作者38(3): 275-280, 
[29] Chen, X Y, Gu, Y, Ma, Y J, Chen, S M, Tang, M C, Zhang, Y Y, Yu, X Z, Wang, P, Zhang, J, Wu, J, Liu, H Y, Zhang, Y G. Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants. MATERIALS RESEARCH EXPRESS[J]. 2019, 6(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000448454400004.
[30] Ma, Yingjie, Deng, Shuangyan, Cheng, Jifeng, Gu, Yi, Liu, Yage, Zhang, Yonggang, Shao, Xiumei, Li, Xue, Gong, Haimei, Fang, Jiaxiong. Towards Surface Leakage Free High Fill-Factor Extended Wavelength InGaAs Focal-Plane Arrays. IEEE JOURNAL OF QUANTUM ELECTRONICS[J]. 2019, 第 1 作者  通讯作者  55(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000494697200001.
[31] Zhang, J, Chen, X Y, Ma, Y J, Gong, Q, Shi, Y H, Yang, N N, Huang, H, He, G X, Gu, Y, Zhang, Y G. Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH[J]. 2019, 512: 84-89, http://dx.doi.org/10.1016/j.jcrysgro.2019.02.011.
[32] Huang, Jian, Chen, Baile, Deng, Zhuo, Gu, Yi, Ma, Yingjie, Zhang, Jian, Chen, Xiren, Shao, Jun. Deep levels analysis in wavelength extended InGaAsBi photodetector. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2019, 第 5 作者34(9): 
[33] 顾溢. Monolithically grown 2.5 μmInGaAs photodetector structures on GaP and GaP/Si (001) substrates. Materials Research Express. 2019, 
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（1） 半导体光谱测试方法与技术, 科学出版社（北京）, 2016-01, 第 3 作者
（2） 硅锗低维材料可控生长, 科学出版社, 2021-04, 第 1 作者

   

（ 1 ） 基于高铟异变结构的铟镓砷红外APD波长扩展研究, 负责人, 国家任务, 2017-01--2019-12
（ 2 ） 航天激光三维成像近红外APD研究, 参与, 国家任务, 2017-01--2020-12
（ 3 ） Design of waveguide InGaAs/InAlAs APDs towards 50-GHz bandwidth and beyond, 负责人, 境内委托项目, 2017-12--2019-09
（ 4 ） 波长扩展InGaAs大面积高性能探测材料及器件研究, 参与, 国家任务, 2016-07--2020-12
（ 5 ） 可见-近红外宽光谱铟镓砷线性级联雪崩焦平面研究, 负责人, 国家任务, 2021-01--2024-12
（ 6 ） 大规模低串扰InGaAs盖革雪崩焦平面探测器机理研究, 负责人, 地方任务, 2021-07--2024-06
（ 7 ） 线性模式低噪声雪崩探测器研究, 负责人, 国家任务, 2022-01--2025-12
（ 8 ） 近红外单光子雪崩焦平面探测器研究, 负责人, 国家任务, 2022-01--2025-12