080903-微电子学与固体电子学

功率电子
极限表征

2015-09--2016-08   加州大学洛杉矶分校   联合培养博士
2011-09--2016-09   中国科学院上海微系统与信息技术研究所   博士
2007-09--2011-06   南京大学匡亚明学院理科强化班   学士

   

2023-01~现在, 中国科学院上海微系统与信息技术研究所, 研究员，团委书记，极端微电子党支部书记，上海市青联委员
2021-01~2022-12,中国科学院上海微系统与信息技术研究所, 副研究员，团委书记，极端微电子党支部书记，上海市青联委员
2019-05~2020-12,中国科学院上海微系统与信息技术研究所, 副研究员，团委书记，上海市青联委员
2019-01~2019-05,中国科学院上海微系统与信息技术研究所, 副研究员，上海市青联委员
2016-10~2018-12,中国科学院上海微系统与信息技术研究所, 助理研究员

   

（1） 全国青年岗位能手, , 国家级, 2022
（2） “振兴杯”全国青年职业技能大赛（研发创新类）金奖, 国家级, 2022
（3） 上海市青年五四奖章, 省级, 2021
（4） 上海市科技青年35人引领计划, 省级, 2021
（5） 中国科学院优秀博士学位论文, , 部委级, 2018
（6） 中国电子教育学会优秀博士学位论文, , 部委级, 2018
（7） 中国科学院院长特别奖, , 部委级, 2016

（ 1 ） 一种硅基氮化镓微波器件及制备方法, 发明专利, 2021, 第 3 作者, 专利号: CN111739799B

（ 2 ） 一种用于SOI基GaN晶圆及其制备方法, 发明专利, 2021, 第 1 作者, 专利号: CN113257909A

（ 3 ） 一种SOI基p-GaN增强型GaN功率开关器件的制备方法, 专利授权, 2021, 第 1 作者, 专利号: CN111739801B

（ 4 ） 一种SOI基凹栅增强型GaN功率开关器件的制备方法, 专利授权, 2021, 第 1 作者, 专利号: CN111739800B

（ 5 ） 一种基于高k栅介质与低温欧姆接触工艺的SiC MOSFET的制备, 发明专利, 2020, 第 3 作者, 专利号: CN111739937A

（ 6 ） 一种硅基宽光谱光电探测器的制备方法, 发明专利, 2020, 第 1 作者, 专利号: CN111739963A

（ 7 ） 基于AlGaN/p-GaN沟道的增强型纵向功率器件及制作方法, 发明专利, 2019, 第 3 作者, 专利号: CN110277445A

（ 8 ） 基于AlGaN/p-GaN沟道的增强型纵向功率器件, 实用新型, 2018, 第 3 作者, 专利号: CN207938616U

（ 9 ） 沟槽型MOSFET功率器件及其制作方法, 专利授权, 2018, 第 3 作者, 专利号: CN107564964A

（ 10 ） SiC器件栅介质层及SiC器件结构的制备方法, 专利授权, 2017, 第 3 作者, 专利号: CN107527803A

（ 11 ） 基于界面钝化层的MOS电容器及其制备方法, 专利授权, 2017, 第 4 作者, 专利号: CN107507829A

（ 12 ） 一种MOS功率器件及其制备方法, 专利授权, 2017, 第 3 作者, 专利号: CN107393814A

（ 13 ） 一种基于SOI‑量子点异质结的红外探测器制备方法, 专利授权, 2017, 第 1 作者, 专利号: CN107359221A

（ 14 ） 一种利用金属/氧化物双层掩膜结构刻蚀SiC的方法, 发明专利, 2017, 第 4 作者, 专利号: CN107275196A

（ 15 ） SiC-LDMOS功率表器件及其制备方法, 发明专利, 2016, 第 6 作者, 专利号: CN106158933A

（ 16 ） 基于氟化石墨烯钝化的AlGaN/GaN HEMT器件及制作方法, 发明专利, 2016, 第 5 作者, 专利号: CN105304689A

（ 17 ） 一种基于薄膜半导体-石墨烯异质结的光电探测器制备方法, 发明专利, 2015, 第 2 作者, 专利号: CN105206689A

（ 18 ） 一种水基ALD诱使的可逆N型石墨烯制备方法, 发明专利, 2015, 第 2 作者, 专利号: CN105129788A

（ 19 ） 基于Metal/Insulator/AlGaN/GaN叠层MIS结构的负微分电阻器件及制备方法, 发明专利, 2015, 第 6 作者, 专利号: CN104599975A

（ 20 ） 一种基于ALD的石墨烯基热电子晶体管及其制备方法, 发明专利, 2014, 第 2 作者, 专利号: CN103985741A

（ 21 ） 一种SOI RESURF超结器件结构及其制作方法, 发明专利, 2013, 第 5 作者, 专利号: CN103021864A

（ 22 ） 一种SJ-IGBT器件结构及其制作方法, 发明专利, 2013, 第 5 作者, 专利号: CN102969244A

（ 23 ） 在InP衬底上制备高K栅介质薄膜和MIS电容的方法, 发明专利, 2012, 第 7 作者, 专利号: CN102760657A

   

[1] He, Zhengyi, Yu, Lingyan, Wang, Gang, Ye, Caichao, Feng, Xiaoqiang, Zheng, Li, Yang, Siwei, Zhang, Guanglin, Wei, Genwang, Liu, Zhiduo, Xue, Zhongying, Ding, Guqiao. Investigation of a Highly Sensitive Surface-Enhanced Raman Scattering Substrate Formed by a Three-Dimensional/Two-Dimensional Graphene/Germanium Heterostructure. ACS APPLIED MATERIALS & INTERFACES[J]. 2022, 14(12): 14764-14773, http://dx.doi.org/10.1021/acsami.2c00584.
[2] Yu, Lingyan, Zhang, Shan, Zhang, Guanglin, He, Zhengyi, Feng, Xiaoqiang, Liu, Zhiduo, Wang, Gang, Tao, Weidong, Zheng, Li, Yang, Siwei, Ding, Guqiao. Dual-Enhanced Photodetectors Combining Graphene Plasmonic Nanoresonators With Germanium-on-Insulator Optical Cavities. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2022, 69(6): 3246-3250, http://dx.doi.org/10.1109/TED.2022.3168528.
[3] Li, Yongqiang, Xiao, Yi, Tao, Quan, Yu, Mengmeng, Zheng, Li, Yang, Siwei, Ding, Guqiao, Dong, Hui, Xie, Xiaoming. Selective coordination and localized polarization in graphene quantum dots: Detection of fluoride anions using ultra-low-field NMR relaxometry. CHINESE CHEMICAL LETTERS[J]. 2021, 32(12): 3921-3926, http://dx.doi.org/10.1016/j.cclet.2021.05.014.
[4] Zhou, Wen, Zheng, Li, Ning, Zhijun, Cheng, Xinhong, Wang, Fang, Xu, Kaimin, Xu, Rui, Liu, Zhongyu, Luo, Man, Hu, Weida, Guo, Huijun, Zhou, Wenjia, Yu, Yuehui. Silicon: quantum dot photovoltage triodes. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-021-27050-9.
[5] Wei, Wenya, Yang, Siwei, Wang, Gang, Zhang, Teng, Pan, Wei, Cai, Zenghua, Yang, Yucheng, Zheng, Li, He, Peng, Wang, Lei, Baktash, Ardeshir, Zhang, Quanzhen, Liu, Liwei, Wang, Yeliang, Ding, Guqiao, Kang, Zhenhui, Yakobson, Boris I, Searles, Debra J, Yuan, Qinghong. Bandgap engineering of two-dimensional C3N bilayers. NATURE ELECTRONICS[J]. 2021, 4(7): 486-494, http://dx.doi.org/10.1038/s41928-021-00602-z.
[6] Gao, Xiuli, Zheng, Li, Zheng, Hao, Cheng, Xinhong, Zhang, David Wei. Ambient stability improvement of CQD photodetectors by low-temperature deposited graphene encapsulation. MATERIALS LETTERS[J]. 2021, 303: http://dx.doi.org/10.1016/j.matlet.2021.130530.
[7] Liu, Xiaobo, Zheng, Li, Cheng, Xinhong, Shen, Lingyan, Liu, Shaoyu, Wang, Da, You, Jinhao, Yu, Yuehui. Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures. APPLIED PHYSICS LETTERS[J]. 2021, 118(17): [8] Xiao, Xiongbin, Xu, Kaimin, Yin, Ming, Qiu, Yu, Zhou, Wenjia, Zheng, Li, Cheng, Xinhong, Yu, Yuehui, Ning, Zhijun. High quality silicon: Colloidal quantum dot heterojunction based infrared photodetector. APPLIED PHYSICS LETTERS[J]. 2020, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000520100100001.
[9] Zheng, Li, Wang, Qian, Cheng, Xinhong, Xin, Wenbo, Ye, Peiyi, Yu, Yuehui. Optimized JFET regions of 4H-SiC VDMOS with reduced on-resistance and improved gate oxide reliability. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2020, 53(27): https://www.webofscience.com/wos/woscc/full-record/WOS:000533395900001.
[10] Hu, Xurui, Zhu, Wei, Zhao, Menghan, Wang, Gang, Yang, Siwei, Liu, Zhiduo, Zheng, Li, Guo, Qinglei, Chen, Da, Ding, Guqiao. Graphene Quantum Dots Promoted the Synthesis of Heavily n-Type Graphene for Near-Infrared Photodetectors. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2020, 124(2): 1674-1680, https://www.webofscience.com/wos/woscc/full-record/WOS:000508467700050.
[11] Zhou, Wen, Zheng, Li, Cheng, Xinhong, Zhou, Wenjia, Xiao, Xiongbin, Xu, Kaimin, Xin, Wenbo, Ye, Peiyi, Yu, Yuehui. PbS colloidal quantum dots patterning technique with low vertical leakage current for the photodetection applications. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2020, 31(8): 5900-5906, https://www.webofscience.com/wos/woscc/full-record/WOS:000529360200018.
[12] Xiang, Pengcheng, Wang, Gang, Yang, Siwei, Liu, Zhiduo, Zheng, Li, Li, Jiurong, Xu, Anli, Zhao, Menghan, Zhu, Wei, Guo, Qinglei, Chen, Da. In situ synthesis of monolayer graphene on silicon for near-infrared photodetectors. RSC ADVANCES[J]. 2019, 9(64): 37512-37517, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000501620400045.
[13] Dongliang Zhang, Xinhong Cheng, Li Zheng, Lingyan Shen, Qian Wang, Ziyue Gu, Ru Qian, Dengpeng Wu, Wen Zhou, Duo Cao, Yuehui Yu. Corrigendum to "Effects of polycrystalline AlN film on the dynamic performance of AlGaN/GaN high electron mobility transistors" Mat. Des. 148(2018) 1–7. MATERIALS & DESIGN. 2019, 429-, http://dx.doi.org/10.1016/j.matdes.2018.11.059.
[14] Wang, Gang, Liu, Zhiduo, Yang, Siwei, Zheng, Li, Li, Jiurong, Zhao, Menghan, Zhu, Wei, Xu, Anli, Guo, Qinglei, Chen, Da, Ding, Guqiao. Barrier-assisted ion beam synthesis of transfer-free graphene on an arbitrary substrate. APPLIED PHYSICS LETTERS[J]. 2019, 115(13): [15] Xu, Dawei, Zheng, Li, Cheng, Xinhong, Wang, Gang, Wang, Qian, Xin, Wenbo, Ye, Peiyi, Shen, Lingyan, Yu, Yuehui. Band alignment regulation of HfO2/SiC heterojunctions induced by PEALD with in situ NH3-plasma passivation. PHYSICS LETTERS A[J]. 2019, 383(25): 3134-3137, http://dx.doi.org/10.1016/j.physleta.2019.07.011.
[16] Zheng, Li, Zhou, Wenjia, Ning, Zhijun, Wang, Gang, Cheng, Xinhong, Hu, Weida, Zhou, Wen, Liu, Zhiduo, Yang, Siwei, Xu, Kaimin, Luo, Man, Yu, Yuehui. Ambipolar Graphene-Quantum Dot Phototransistors with CMOS Compatibility. ADVANCED OPTICAL MATERIALS[J]. 2018, 6(23): https://www.webofscience.com/wos/woscc/full-record/WOS:000453512700013.
[17] Wang, Qian, Cheng, Xinhong, Zheng, Li, Shen, Lingyan, Zhang, Dongliang, Gu, Ziyue, Qian, Ru, Cao, Duo, Yu, Yuehui. Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy. APPLIED SURFACE SCIENCE[J]. 2018, 428: 1-6, http://dx.doi.org/10.1016/j.apsusc.2017.09.099.
[18] 钱茹, 程新红, 郑理, 沈玲燕, 张栋梁, 顾子悦, 俞跃辉. p-GaN在不同掩膜和刻蚀气体中的ICP刻蚀. 半导体技术[J]. 2018, 43(6): 449-455, http://lib.cqvip.com/Qikan/Article/Detail?id=675451056.
[19] Zheng, Li, Cheng, Xinhong, Ye, Peiyi, Shen, Lingyan, Wang, Qian, Zhang, Dongliang, Gu, Ziyue, Zhou, Wen, Wu, Dengpeng, Yu, Yuehui. Low temperature growth of three-dimensional network of graphene for high-performance supercapacitor electrodes. MATERIALS LETTERS[J]. 2018, 218: 90-94, http://dx.doi.org/10.1016/j.matlet.2018.01.159.
[20] Wang, Qian, Cheng, Xinhong, Zheng, Li, Ye, Peiyi, Li, Menglu, Shen, Lingyan, Li, Jingjie, Zhang, Dongliang, Gu, Ziyue, Yu, Yuehui. Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer. APPLIED SURFACE SCIENCE[J]. 2017, 410: 326-331, http://dx.doi.org/10.1016/j.apsusc.2017.03.114.
[21] Shen, Lingyan, Zhang, Dongliang, Cheng, Xinhong, Zheng, Li, Xu, Dawei, Wang, Qian, Li, Jingjie, Cao, Duo, Yu, Yuehui. Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation. IEEE ELECTRON DEVICE LETTERS[J]. 2017, 38(5): 596-599, https://www.webofscience.com/wos/woscc/full-record/WOS:000400413200016.
[22] Wang, Qian, Cheng, Xinhong, Zheng, Li, Ye, Peiyi, Li, Menglu, Shen, Lingyan, Li, Jingjie, Zhang, Dongliang, Gu, Ziyue, Yu, Yuehui. Interfacial chemistry and energy band alignment of TiAlO on 4H-SiC determined by X-ray photoelectron spectroscopy. APPLIED SURFACE SCIENCE[J]. 2017, 409: 71-76, http://dx.doi.org/10.1016/j.apsusc.2017.02.257.
[23] Wang, Qian, Cheng, Xinhong, Zheng, Li, Ye, Peiyi, Li, Menglu, Shen, Lingyan, Li, Jingjie, Zhang, Dongliang, Gu, Ziyue, Yu, Yuehui. Band alignment between PEALD-AlNO and AlGaN/GaN determined by angle-resolved X-ray photoelectron spectroscopy. APPLIED SURFACE SCIENCE[J]. 2017, 423: 675-679, http://dx.doi.org/10.1016/j.apsusc.2017.06.192.
[24] Li, Jingjie, Cheng, Xinhong, Wang, Qian, Zheng, Li, Shen, Lingyan, Li, Xinchang, Zhang, Dongliang, Zhu, Hongyue, Shen, DaShen, Yu, Yuehui. Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2017, 67: 104-109, https://www.webofscience.com/wos/woscc/full-record/WOS:000403992400016.
[25] Zheng, Li, Cheng, Xinhong, Yu, Yuehui, Xie, Yahong, Li, Xiaolong, Wang, Zhongjian. Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition. PHYSICAL CHEMISTRY CHEMICAL PHYSICS[J]. 2015, 17(5): 3179-3185, https://www.webofscience.com/wos/woscc/full-record/WOS:000348203200026.
[26] Zheng, Li, Cheng, Xinhong, Cao, Duo, Wang, Qian, Wang, Zhongjian, Xia, Chao, Shen, Lingyan, Yu, Yuehui, Shen, Dashen. Direct growth of Sb2Te3 on graphene by atomic layer deposition. RSC ADVANCES[J]. 2015, 5(50): 40007-40011, http://www.corc.org.cn/handle/1471x/2376511.
[27] Zheng, Xiaohu, Zhang, Miao, Shi, Xiaohua, Wang, Gang, Zheng, Li, Yu, Yuehui, Huang, Anping, Chu, Paul K, Gao, Heng, Ren, Wei, Di, Zengfeng, Wang, Xi. Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics. ADVANCED FUNCTIONAL MATERIALS[J]. 2015, 25(12): 1805-1813, http://www.corc.org.cn/handle/1471x/2237063.
[28] Zheng, Li, Cheng, Xinhong, Cao, Duo, Zhang, Dongliang, Wang, Zhongjian, Xu, Dawei, Xia, Chao, Shen, Lingyan, Yu, Yuehui. Al2O3-Gd2O3 double-films grown on graphene directly by H2O-assisted atomic layer deposition. RSC ADVANCES[J]. 2014, 4(83): 44296-44301, https://www.webofscience.com/wos/woscc/full-record/WOS:000344527300066.
[29] Wan, Wenyan, Cheng, Xinhong, Cao, Duo, Zheng, Li, Xu, Dawei, Wang, Zhongjian, Xia, Chao, Shen, Lingyan, Yu, Yuehui, Shen, DaShen. Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A[J]. 2014, 32(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000335847600027.
[30] Wang, Gang, Ding, Guqiao, Zhu, Yun, Chen, Da, Ye, Lin, Zheng, Li, Zhang, Miao, Di, Zengfeng, Liu, Su. Growth of controlled thickness graphene by ion implantation for field-effect transistor. MATERIALS LETTERS[J]. 2013, 107: 170-173, http://dx.doi.org/10.1016/j.matlet.2013.06.013.
[31] 徐大伟, 程新红, 曹铎, 郑理, 万文艳, 俞跃辉. PEALD HfO_2栅介质薄膜的界面优化及其特性表征. 半导体技术[J]. 2013, 38(10): 755-759, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=4962683&detailType=1.
[32] Cao, Duo, Cheng, Xinhong, Jia, Tingting, Zheng, Li, Xu, Dawei, Wang, Zhongjian, Xia, Chao, Yu, Yuehui, Shen, Dashen. Total-Dose Radiation Response of HfLaO Films Prepared by Plasma Enhanced Atomic Layer Deposition. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2013, 60(2): 1373-1378, https://www.webofscience.com/wos/woscc/full-record/WOS:000320856800017.

   

（ 1 ） 针对多层MoS2的低能等离子体可控掺杂机理及原位缺陷修饰研究, 负责人, 国家任务, 2018-01--2020-12
（ 2 ） 大尺寸高性能SOI基GaN晶圆研究及单芯片集成半桥开关验证, 负责人, 地方任务, 2019-09--2021-08
（ 3 ） 青促会, 负责人, 中国科学院计划, 2020-01--2023-12
（ 4 ） 原子层沉积系统自匹配等离子体装置开发, 负责人, 中国科学院计划, 2018-09--2019-09
（ 5 ） 石墨烯/复合高k介质异质结直接形成方法和机理研究, 负责人, 地方任务, 2017-05--2020-04
（ 6 ） ALD等离子体系统原位钝化SiC界面及快慢双能态陷阱共轭抑制机理研究, 负责人, 国家任务, 2021-01--2024-12
（ 7 ） 19-H863-04-ZD-013-001-04, 负责人, 国家任务, 2020-01--2022-12
（ 8 ） SiC 界面原位钝化及快慢双能级陷阱共轭抑制机理研究（上海市启明星）, 负责人, 地方任务, 2021-07--2024-06
（ 9 ） GaN基纵向功率器件终端结构研究, 负责人, 国家任务, 2022-11--2025-10

现指导学生

张峻  硕士研究生  085400-电子信息  

冯文耀  硕士研究生  085400-电子信息