基本信息
李泠  男  博导  中国科学院微电子研究所
电子邮件: lingli@ime.ac.cn
通信地址: 中科院微电子所
邮政编码: 100029

招生信息

   
招生专业
080903-微电子学与固体电子学
085208-电子与通信工程
招生方向
新型纳米存储器件与集成技术
半导体器件模型

教育背景

2004-12--2007-12   维也纳工业大学   博士
2001-09--2004-07   中国科学院微电子研究所   硕士
1997-09--2001-07   电子科技大学   学士

工作经历

   
工作简历
2009-08~2012-03,韩国庆熙大学, 研究教授
2007-10~2009-07,比利时IMEC研究中心, 高级研究员
社会兼职
2015-05-01-今,国家科技专家库, 评审专家
2014-07-01-今,国家国际科技合作专项项目, 评审专家
2014-07-01-今,International Conference on Computer Aided Design for Thin-Film Transistors (IEEE TFT CAD), 委员会委员

专利与奖励

   
专利成果
( 1 ) 三维集成阻变存储器的热效应评估及降低热串扰的方法, 发明, 2015, 第 3 作者, 专利号: 201510983042.6
( 2 ) 改善三维集成阻变存储器耐久性的法, 发明, 2016, 第 3 作者, 专利号: 201511019965.6
( 3 ) 测量半导体材料无序度的方法, 发明, 2015, 第 2 作者, 专利号: 201510227994.5
( 4 ) 测量有机半导体状态密度的方法, 发明, 2015, 第 2 作者, 专利号: 201510228253.9
( 5 ) 赛贝克系数测量结构、测量结构制备方法及测量方法, 发明, 2015, 第 2 作者, 专利号: 201510226906.X
( 6 ) 一种优化氧化物基的阻变存储器性能的方法, 发明, 2017, 第 3 作者, 专利号: 201710376114.X
( 7 ) 赛贝克系数测量结构、测量结构制备方法及测量方法, 发明, 2018, 第 2 作者, 专利号: 201510226906.X
( 8 ) 石墨烯晶体管的小信号模型的截止频率的计算方法, 发明, 2018, 第 4 作者, 专利号: CN201510560088.7
( 9 ) 测量有机半导体状态密度的方法, 发明, 2018, 第 2 作者, 专利号: CN201510228253.9
( 10 ) 测量半导体材料无序度的方法, 发明, 2018, 第 2 作者, 专利号: 201510227994.5
( 11 ) 一种用于获取表面势的方法及装置, 发明, 2018, 第 2 作者, 专利号: PCT/CN2018/099637
( 12 ) 一种阻变存储器的设计方法及装置, 发明, 2018, 第 2 作者, 专利号: PCT/CN2018/099639
( 13 ) 一种阻变存储器, 发明, 2018, 第 3 作者, 专利号: 201811239365.4
( 14 ) 一种阻变存储器的制备方法, 发明, 2018, 第 2 作者, 专利号: 201811239346.1
( 15 ) 基于纳米带的晶体管及其制备方法, 发明, 2018, 第 2 作者, 专利号: 201810957190.4
( 16 ) 基于纳米带的晶体管及其制备方法, 发明, 2018, 第 2 作者, 专利号: 201810953689.8
( 17 ) 一种用于测量二维半导体材料的磁阻的装置及其制作方法, 发明, 2018, 第 2 作者, 专利号: 201810684255.2
( 18 ) 一种测量有机半导体的有机磁阻的方法, 发明, 2018, 第 1 作者, 专利号: 201810684175.7
( 19 ) 像素补偿电路, 发明, 2018, 第 3 作者, 专利号: PCT/CN2018/098339
( 20 ) 无边框显示结构及无边框显示器, 发明, 2018, 第 3 作者, 专利号: 201811320829.4

出版信息

   
发表论文
[1] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[2] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[3] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[4] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[5] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[6] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[7] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[8] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[9] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[10] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[11] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[12] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[13] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[14] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[15] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[16] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[17] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[18] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[19] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[20] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[21] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[22] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[23] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[24] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[25] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[26] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[27] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[28] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[29] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[30] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[31] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[32] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[33] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[34] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[35] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[36] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[37] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[38] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[39] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[40] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[41] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[42] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[43] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[44] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[45] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
[46] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000101.
[47] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[48] Jiawei Wang, Jiebin Niu, Bin Shao, Guanhua Yang, Congyan Lu, Mengmeng Li, Zheng Zhou, Xichen Chuai, Jiezhi Chen, Nianduan Lu, Bing Huang, Yeliang Wang, Ling Li, Ming Liu. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. NATURE COMMUNICATIONS[J]. 2021, 12(1): http://dx.doi.org/10.1038/s41467-020-20238-5.
[49] Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling. Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application. ORGANIC ELECTRONICS[J]. 2021, 96: http://dx.doi.org/10.1016/j.orgel.2021.106186.
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[323] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [324] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[325] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[326] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[327] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[328] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[329] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[330] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[331] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[332] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[333] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [334] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[335] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[336] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[337] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[338] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[339] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[340] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[341] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[342] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[343] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [344] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[345] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[346] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[347] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[348] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[349] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[350] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[351] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[352] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[353] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [354] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[355] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[356] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[357] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[358] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[359] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[360] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[361] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[362] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[363] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [364] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[365] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[366] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[367] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[368] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[369] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[370] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[371] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[372] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[373] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [374] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[375] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[376] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[377] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[378] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[379] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[380] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[381] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[382] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[383] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [384] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[385] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[386] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[387] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[388] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[389] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[390] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[391] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[392] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[393] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[394] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[395] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[396] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[397] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [398] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [399] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[400] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[401] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[402] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[403] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[404] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[405] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[406] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[407] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[408] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[409] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[410] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[411] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[412] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[413] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [414] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[415] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[416] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[417] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[418] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[419] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[420] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[421] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[422] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[423] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [424] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[425] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[426] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[427] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[428] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[429] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[430] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[431] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[432] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[433] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [434] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[435] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[436] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[437] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[438] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[439] Guo, Xiaojun, Xu, Yong, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Li, Ling, Zhao, Jiaqing, Tang, Wei, Sporea, Radu A, Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Yan, Feng. Current Status and Opportunities of Organic Thin-Film Transistor Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 64(5): 1906-1921, https://www.webofscience.com/wos/woscc/full-record/WOS:000399935800004.
[440] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[441] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[442] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[443] Shi, Xuewen, Xu, Guangwei, Duan, Xinlv, Lu, Nianduan, Chen, Jiezhi, Li, Ling, Liu, Ming, IEEE. Analytical model of Energy Level Alignment at Metal-Organic Interface facilitating Hole Injection. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017)null. 2017, 225-228, [444] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[445] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[446] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[447] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[448] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[449] Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming. Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors. ORGANIC ELECTRONICS[J]. 2016, 29: 27-32, http://dx.doi.org/10.1016/j.orgel.2015.11.028.
[450] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[451] Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming. Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors. ORGANIC ELECTRONICS[J]. 2016, 29: 27-32, http://dx.doi.org/10.1016/j.orgel.2015.11.028.
[452] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
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[454] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[455] Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming. Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors. ORGANIC ELECTRONICS[J]. 2016, 29: 27-32, http://dx.doi.org/10.1016/j.orgel.2015.11.028.
[456] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
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[458] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[459] Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming. Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors. ORGANIC ELECTRONICS[J]. 2016, 29: 27-32, http://dx.doi.org/10.1016/j.orgel.2015.11.028.
[460] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[461] Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming. Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors. ORGANIC ELECTRONICS[J]. 2016, 29: 27-32, http://dx.doi.org/10.1016/j.orgel.2015.11.028.
[462] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[463] Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming. Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors. ORGANIC ELECTRONICS[J]. 2016, 29: 27-32, http://dx.doi.org/10.1016/j.orgel.2015.11.028.
[464] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
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[467] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[468] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[469] Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming. Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors. ORGANIC ELECTRONICS[J]. 2016, 29: 27-32, http://dx.doi.org/10.1016/j.orgel.2015.11.028.
[470] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
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[472] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[473] Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming. Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors. ORGANIC ELECTRONICS[J]. 2016, 29: 27-32, http://dx.doi.org/10.1016/j.orgel.2015.11.028.
[474] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[475] Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming. Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors. ORGANIC ELECTRONICS[J]. 2016, 29: 27-32, http://dx.doi.org/10.1016/j.orgel.2015.11.028.
[476] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[477] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[478] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[479] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[480] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [481] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [482] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[483] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[484] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[485] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[486] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[487] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [488] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[489] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[490] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[491] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[492] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[493] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [494] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [495] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[496] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[497] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[498] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[499] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[500] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [501] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[502] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[503] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[504] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[505] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[506] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [507] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [508] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[509] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[510] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[511] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[512] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[513] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [514] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[515] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[516] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[517] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[518] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[519] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [520] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [521] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[522] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[523] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[524] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[525] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[526] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [527] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[528] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[529] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[530] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[531] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[532] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [533] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [534] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[535] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[536] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[537] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[538] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[539] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [540] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[541] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[542] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[543] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[544] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[545] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [546] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [547] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[548] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[549] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[550] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[551] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[552] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [553] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [554] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[555] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[556] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[557] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[558] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[559] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[560] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[561] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[562] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[563] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[564] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [565] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [566] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [567] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [568] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[569] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[570] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[571] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[572] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[573] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[574] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[575] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[576] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [577] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[578] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[579] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[580] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[581] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[582] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [583] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [584] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[585] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[586] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[587] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[588] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[589] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [590] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[591] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[592] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[593] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[594] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[595] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [596] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [597] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[598] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[599] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[600] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[601] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[602] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[603] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[604] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [605] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [606] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[607] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[608] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[609] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[610] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[611] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[612] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[613] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[614] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[615] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[616] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [617] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [618] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [619] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [620] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[621] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[622] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[623] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[624] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[625] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[626] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[627] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[628] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [629] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[630] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[631] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[632] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[633] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[634] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [635] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [636] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[637] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[638] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[639] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[640] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[641] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [642] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[643] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[644] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[645] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[646] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[647] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [648] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [649] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[650] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[651] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[652] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[653] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[654] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [655] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[656] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[657] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000355925600077.
[658] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[659] Wang Lingfei, Peng Songang, Zong Zhiwei, Li Ling, Wang Wei, Xu Guangwei, Lu Nianduan, Ji Guanyu, Jin Zhi, Liu Ming. A New Surface Potential Based Physical Compact Model for GFET in RF Applications. 2015, http://10.10.10.126/handle/311049/15248.
[660] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [661] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [662] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): https://doaj.org/article/f7aea73ef2714a119900ad324a32d852.
[663] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[664] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[665] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[666] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[667] Li Ling. An improved cut-off frequency model with a modified small-signal equivalent circuit in grapheme field-effect transistors. IEEE Electron Device Letters. 2015, [668] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000348842600003.
[669] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[670] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[671] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[672] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[673] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[674] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[675] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [676] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[677] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[678] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[679] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[680] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[681] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[682] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[683] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[684] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [685] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[686] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[687] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[688] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[689] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[690] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[691] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[692] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[693] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [694] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[695] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[696] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[697] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[698] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[699] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[700] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[701] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[702] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [703] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[704] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[705] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[706] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[707] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[708] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[709] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[710] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[711] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [712] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[713] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[714] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[715] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[716] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[717] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[718] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[719] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[720] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [721] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[722] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[723] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[724] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[725] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[726] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[727] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[728] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[729] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[730] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[731] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[732] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[733] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[734] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [735] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [736] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[737] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[738] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[739] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[740] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[741] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[742] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[743] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[744] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[745] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[746] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[747] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [748] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[749] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[750] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[751] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[752] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[753] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[754] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[755] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[756] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [757] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
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[759] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[760] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[761] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[762] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[763] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[764] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[765] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[766] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[767] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[768] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[769] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[770] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [771] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [772] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[773] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[774] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[775] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[776] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[777] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[778] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[779] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[780] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[781] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[782] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[783] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [784] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[785] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[786] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[787] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[788] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[789] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
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[791] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[792] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [793] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[794] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[795] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[796] Sun Pengxiao, Li Ling, Lu Nianduan, Wang Ming, Liu Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J Comput Electron[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092031.
[797] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[798] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[799] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[800] Li Ling, Lu Nianduan, Liu Ming. Limitation of the concept of transport energy in disordered organic semiconductors. Europhysics Letters[J]. 2014, http://www.irgrid.ac.cn/handle/1471x/1092032.
[801] Zong, Zhiwei, Li, Ling, Jang, Jin, Li, Zhigang, Lu, Nianduan, Shang, Liwei, Ji, Zhuoyu, Liu, Ming, IEEE. A New Surface Potential-Based Compact Model for a-IGZO TFTs in RFID Applications. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2014, [802] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[803] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[804] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[805] Li, Ling, Lu, Nianduan, Liu, Ming. Effect of dipole layer on the density-of-states and charge transport in organic thin film transistors. APPLIED PHYSICS LETTERS[J]. 2013, 103(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000329973800085.
[806] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
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[809] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[810] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Charge carrier relaxation model in disordered organic semiconductors. AIP ADVANCES[J]. 2013, 3(11): http://www.irgrid.ac.cn/handle/1471x/1092001.
[811] Li, Ling, Lu, Nianduan, Liu, Ming. Effect of dipole layer on the density-of-states and charge transport in organic thin film transistors. APPLIED PHYSICS LETTERS[J]. 2013, 103(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000329973800085.
[812] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[813] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Charge carrier relaxation model in disordered organic semiconductors. AIP ADVANCES[J]. 2013, 3(11): http://www.irgrid.ac.cn/handle/1471x/1092001.
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[815] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
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[818] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
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[821] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[822] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Charge carrier relaxation model in disordered organic semiconductors. AIP ADVANCES[J]. 2013, 3(11): http://www.irgrid.ac.cn/handle/1471x/1092001.
[823] Li, Ling, Lu, Nianduan, Liu, Ming. Effect of dipole layer on the density-of-states and charge transport in organic thin film transistors. APPLIED PHYSICS LETTERS[J]. 2013, 103(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000329973800085.
[824] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[825] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[826] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Charge carrier relaxation model in disordered organic semiconductors. AIP ADVANCES[J]. 2013, 3(11): http://www.irgrid.ac.cn/handle/1471x/1092001.
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[830] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
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[833] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
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[836] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[837] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[838] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Charge carrier relaxation model in disordered organic semiconductors. AIP ADVANCES[J]. 2013, 3(11): http://www.irgrid.ac.cn/handle/1471x/1092001.
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[842] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[843] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Charge carrier relaxation model in disordered organic semiconductors. AIP ADVANCES[J]. 2013, 3(11): http://www.irgrid.ac.cn/handle/1471x/1092001.
[844] Li, Ling, Lu, Nianduan, Liu, Ming. Effect of dipole layer on the density-of-states and charge transport in organic thin film transistors. APPLIED PHYSICS LETTERS[J]. 2013, 103(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000329973800085.
[845] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[846] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Charge carrier relaxation model in disordered organic semiconductors. AIP ADVANCES[J]. 2013, 3(11): http://www.irgrid.ac.cn/handle/1471x/1092001.
[847] Li, Ling, Lu, Nianduan, Liu, Ming. Effect of dipole layer on the density-of-states and charge transport in organic thin film transistors. APPLIED PHYSICS LETTERS[J]. 2013, 103(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000329973800085.
[848] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[849] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Charge carrier relaxation model in disordered organic semiconductors. AIP ADVANCES[J]. 2013, 3(11): http://www.irgrid.ac.cn/handle/1471x/1092001.
发表著作
(1) 有机电子学, organic electronics, springer, 2008-10, 第 1 作者
(2) Thermoelectric effect and application of organic semiconductors, INTECH,, 2016-12, 第 2 作者
(3) The Polaron Effect on Charge Transport Property for Organic Semiconductors, nova science publishers, 2018-07, 第 2 作者

科研活动

   
科研项目
( 1 ) 高密度存储与磁电子材料关键技术, 主持, 国家级, 2014-01--2017-01
( 2 ) 石墨烯电子与光电子器件研究, 参与, 国家级, 2013-03--2018-12
参与会议
(1)Simulation of doping effect for HfO2-based RRAM based on first-principles calculations   2017-09-07
(2)Temperature-independence Seebeck coefficient induced by energetic disorder in organic semiconductors   Nianduan Lu, Ling Li, and Ming Liu   2016-01-17
(3)A universal mechanism based on the multi-component percolation theory and hopping transport in organic thin film transistors   Ling Li   2015-12-30
(4)Charge Transport in Organic Solar Cells   Ling Li   2015-05-04

指导学生

已指导学生

汪令飞  硕士研究生  080903-微电子学与固体电子学  

韩志恒  硕士研究生  085208-电子与通信工程  

宗旨威  硕士研究生  080903-微电子学与固体电子学  

现指导学生

杨冠华  博士研究生  080903-微电子学与固体电子学  

苏悦  硕士研究生  080903-微电子学与固体电子学  

段新绿  博士研究生  080903-微电子学与固体电子学  

史学文  博士研究生  080903-微电子学与固体电子学  

刘东阳  硕士研究生  080903-微电子学与固体电子学  

黄施捷  博士研究生  080903-微电子学与固体电子学  

周政  博士研究生  080903-微电子学与固体电子学  

郭婧蕊  硕士研究生  080903-微电子学与固体电子学