基本信息
李博  男  硕导  中国科学院微电子研究所
电子邮件: libo3@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号
邮政编码: 100029

研究领域

半导体器件和集成电路辐照效应和抗辐射加固技术

招生信息

   
招生专业
080903-微电子学与固体电子学
080902-电路与系统
080804-电力电子与电力传动
招生方向
纳米器件及电路的辐射效应
高可靠器件工艺及设计加固新方法
高可靠新型非易失存储器技术

教育背景

2008-08--2012-05   法国里昂国立应用科学院   博士
2005-09--2008-01   北京交通大学   硕士
2001-09--2005-07   北京交通大学   本科

工作经历

   
工作简历
2022-03~现在, 中科院硅器件技术重点实验室, 主任
2020-11~现在, 中国科学院微电子研究所,硅器件中心, 副主任
2020-08~现在, 中国科学院微电子研究所, 研究员
2016-06~2016-09,法国国家科学院, 访问学者
2016-01~2020-08,中国科学院微电子研究所, 副研究员
2012-10~2016-01,中国科学院微电子研究所, 助理研究员
社会兼职
2021-01-01-今,十四五高技术领域, 指南专家
2021-01-01-今,中国科学院青年创新促进会, 优秀会员
2020-12-01-今,微电子研究所研究生培养指导委员会, 委员
2020-12-01-今,中国科学院硅器件技术重点实验室, 副主任
2020-11-01-今,高技术领域, 项目评审专家
2020-01-01-今,《现代应用物理》, 青年编委
2018-10-01-今,中国核学会辐射物理分会, 会员
2016-01-01-2020-01-01,中国科学院青年创新促进会会员, 会员

专利与奖励

   
奖励信息
(1) 中国科学院青年创新促进会优秀会员, 院级, 2020
(2) 十佳先进工作者, 研究所(学校), 2019
(3) 研究生喜爱的导师, 研究所(学校), 2019
(4) 研究生喜爱的导师, 研究所(学校), 2018
(5) 微电子所第二届“科研新星”, 一等奖, 研究所(学校), 2015
专利成果
[1] 高鹤, 宿晓慧, 李博, 罗家俊. 一种多通路供电寄生电源以及通信系统. CN: CN111654076B, 2021-07-13.

[2] 李博, 苏泽鑫, 宿晓慧, 王磊, 卜建辉, 赵发展, 韩郑生. 一种自动校验数据的SRAM安全存储系统及其方法. CN: CN112908394A, 2021-06-04.

[3] 李博, 苏泽鑫, 宿晓慧, 刘凡宇, 黄杨, 罗家俊, 韩郑生. 一种SRAM存储单元、SRAM存储器以及数据存储方法. CN: CN112885391A, 2021-06-01.

[4] 颜刚平, 许高博, 毕津顺, 习凯, 李博, 殷华湘, 王文武. 一种绝缘体上半导体结构及其抗总剂量辐照加固方法. CN: CN112086516A, 2020-12-15.

[5] 卜建辉, 王可为, 李多力, 李博, 李彬鸿, 刘海南, 罗家俊, 韩郑生. 基于BSIMSOI的FDSOI MOSFET器件建模方法及装置. CN: CN112052636A, 2020-12-08.

[6] 卜建辉, 王可为, 李多力, 李博, 李彬鸿, 刘海南, 罗家俊, 韩郑生. 基于BSIMIMG的FDSOI MOSFET模型生成方法及装置. CN: CN112052637A, 2020-12-08.

[7] 杨雪琴, 毕津顺, 李博, 习凯, 季兰龙, 刘明. 一种基于RRAM的非易失性锁存器及集成电路. CN: CN210956168U, 2020-07-07.

[8] 宿晓慧, 李博, 李彬鸿, 黄杨, 李多力, 卜建辉, 韩郑生, 罗家俊. 一种SOI器件结构及其制备方法. CN: CN109860098A, 2019-06-07.

[9] 郑中山, 朱慧平, 孔延梅, 李多力, 李博, 罗家俊, 韩郑生, 焦斌斌. 一种绝缘体上硅材料及其抗总剂量辐射的加固方法. CN: CN109860097A, 2019-06-07.

[10] 宿晓慧, 李博, 李彬鸿, 黄杨, 李多力, 卜建辉, 韩郑生, 罗家俊. 一种SOI器件结构及其制备方法. CN: CN109841561A, 2019-06-04.

[11] 宿晓慧, 李博, 李彬鸿, 黄杨, 李多力, 卜建辉, 韩郑生, 罗家俊. 一种SOI器件结构及其制备方法. CN: CN109801847A, 2019-05-24.

[12] 卜建辉, 罗家俊, 高见头, 李彬鸿, 李博, 韩郑生. SOI器件及其制作方法. CN: CN109742085A, 2019-05-10.

[13] 王磊, 李博, 赵发展, 韩郑生, 罗家俊, 刘新宇. 一种单光子光源的制备方法及元器件. CN: CN109713094A, 2019-05-03.

[14] 王磊, 孔延梅, 焦斌斌, 李博, 赵发展, 韩郑生, 罗家俊, 刘新宇. 一种可检真空度的真空玻璃及系统. CN: CN109665725A, 2019-04-23.

[15] 戴茜茜, 毕津顺, 李梅, 刘明, 李博, 习凯. 一种闪存存储电路的抗总剂量效应加固方法. CN: CN109119110A, 2019-01-01.

[16] 徐子轩, 李博, 赵博华, 刘海南, 罗家俊. 一种抗辐射带隙基准电路的加固方法. CN: CN108037789A, 2018-05-15.

[17] 徐子轩, 李博, 刘海南, 罗家俊. 带隙基准电压产生装置. CN: CN107870648A, 2018-04-03.

[18] 解冰清, 李博, 毕津顺, 罗家俊, 卜建辉. 一种直流-交流逆变器的控制方法. CN: CN105099254A, 2015-11-25.

[19] 李博, 毕津顺, 刘海南, 韩郑生, 罗家俊, 刘刚. 用于开关电源数字控制器的数字脉冲宽度调制装置. CN: CN104485933A, 2015-04-01.

[20] 李博, 毕津顺, 刘海南, 韩郑生, 罗家俊, 刘刚. 降压直流-直流转换器的控制方法. CN: CN104362850A, 2015-02-18.

[21] 刘焕明, 周静涛, 杨成樾, 李博, 刘新宇. 一种对深盲孔进行电镀的方法. CN: CN102485965A, 2012-06-06.

出版信息

   
发表论文
(1) 一种智能多通路自适应调控寄生供电系统, An Intelligent Multi-channel Adaptive Control Parasitic Power Supply System, 半导体光电, 2021, 第 3 作者
(2) Radiation hardness and abnormal photoresponse dynamics of the CH3NH3PbI3 perovskite photodetector, JOURNAL OF MATERIALS CHEMISTRY C, 2021, 第 3 作者
(3) SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From-200 degrees C to+300 degrees C), IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2021, 第 6 作者
(4) 一种用于TOF激光雷达的多通道时数转换芯片设计, A Design of Multi-channel Time-to-digital Converter for TOF Lidar, 半导体光电, 2021, 第 6 作者
(5) 用于ESD防护的PDSOI NMOS器件高温特性, High-Temperature Characteristics of PDSOI NMOSFETs with ESD Protection, 半导体技术, 2021, 第 5 作者
(6) Optimization of zero-level interlayer dielectric materials for gate-all-around silicon nanowire channel fabrication in a replacement metal gate process, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 第 19 作者
(7) Simulations of single event effects in 6T2C-based ferroelectric non-volatile static random access memory, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 第 6 作者
(8) Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design, SCIENCE CHINA-INFORMATION SCIENCES, 2021, 第 6 作者
(9) 基于TSV转接板的3D SRAM单粒子多位翻转效应, Single Event Multiple Bit Upset Effect of 3D SRAM Based on TSV Interposer, 半导体技术, 2021, 第 3 作者
(10) Numerical simulation of vertical tunnelling field-effect transistors charge-trapping memory with TCAD tools, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 第 6 作者
(11) Fundamental Mechanism Analyses of NBTI-Induced Effects on Single-Event Upset Hardness for SRAM Cells, 2020 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2020, 
(12) X-ray Irradiation Induced Degradation in Hf0.5Zr0.5O2 FDSOI nMOSFETs, Rare Metals, 2020, 通讯作者
(13) Design and Characterizations of the Radiation-Hardened XCR4C ASIC for X-Ray CCDs for Space Astronomical Applications, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 第 2 作者
(14) FinFET器件总剂量效应研究进展, 微电子学, 2020, 第 2 作者
(15) Soft Error Reliability Evaluation of Nanoscale Logic Circuits in the Presence of Multiple Transient Faults, JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 2020, 第 7 作者
(16) FinFET器件总剂量效应研究进展, A Review of Total Ionizing Dose Effects in FinFETs, 微电子学, 2020, 第 2 作者
(17) Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor, IEEE ACCESS, 2020, 第 5 作者
(18) 一种方波调制的TMR磁场探测系统设计与实现, Design and realization of square wave modulated TMR magnetic field detection system, 现代电子技术, 2020, 第 4 作者
(19) Radiation-Resistant CsPbBr3 Nanoplate-Based Lasers, ACS APPLIED NANO MATERIALS, 2020, 第 3 作者
(20) Novel Insulator Isolated Si NW Sensors Fabricated using Bulk Substrate with Low-cost and High-quality, 6TH ANNUAL INTERNATIONAL WORKSHOP ON MATERIALS SCIENCE AND ENGINEERING, 2020, 
(21) Mechanism Analysis of Proton Irradiation-Induced Increase of 3-dB Bandwidth of GaN-Based Microlight-Emitting Diodes for Space Light Communication, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 第 3 作者
(22) Single-event induced failure mode of PWM in DC/DC converter, MICROELECTRONICS RELIABILITY, 2020, 
(23) 考虑背栅偏置的FOI FinFET电流模型研究, 半导体技术, 2020, 第 1 作者
(24) Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations, SENSORS, 2020, 第 5 作者
(25) Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature, MICROELECTRONICS RELIABILITY, 2020, 第 3 作者
(26) 考虑背栅偏置的FOI FinFET电流模型, Current Model of FOI FinFETs with Back-Gate Bias, 半导体技术, 2020, 第 3 作者
(27) A comparison study on electromagnetic susceptibility of current reference circuits with scaling-down technologies and schemes, MICROELECTRONICS RELIABILITY, 2020, 第 5 作者
(28) High Radiation Resistance of CsPbBr3 Nanoscale Lasers for Space Applications, ACS Applied Nano Materials, 2020, 第 1 作者
(29) Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 第 3 作者
(30) Study on Degradation Mechanisms of Thermal Conductivity for Confined Nanochannel in Gate-All-Around Silicon Nanowire Field-Effect Transistors, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 第 5 作者
(31) Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 第 5 作者
(32) X射线和重离子辐射对GaN基发光二极管的影响, Influence of X-Ray and Heavy Ion Radiation on Properties of GaN-Based LEDs, 微处理机, 2019, 第 2 作者
(33) Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms, MATERIALS, 2019, 第 5 作者
(34) Total ionizing dose effects of gamma and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell, ACTA PHYSICA SINICA, 2019, 第 5 作者
(35) Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions, JOURNAL OF APPLIED PHYSICS, 2019, 
(36) Proton and light ions induced SEU effect in a SOI SRAM with gold plated lid, MICROELECTRONICS RELIABILITY, 2019, 
(37) X射线和重离子辐射对GaN基发光二极管光学特性的影响, 微处理机, 2019, 第 1 作者
(38) Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD, JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 第 3 作者
(39) Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique, IEEE ACCESS, 2019, 第 3 作者
(40) 一种基于数字信号控制的CMOS神经元电路, A Digital-Controlled Silicon Neuron Circuit, 微电子学与计算机, 2019, 第 3 作者
(41) An SET Generation Circuit with Tunable Pulse Width, 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019, 
(42) SEL-Oriented Rad-Hard Strategy and Characterization of the XCR4C ASIC for X-ray CCD Applications, 2019 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), 2019, 
(43) Total ionization dose and single event effects of a commercial stand-alone 4 Mb resistive random access memory (ReRAM), MICROELECTRONICS RELIABILITY, 2019, 
(44) 基于MOS技术的神经元电路研究进展, Research Status of Neuron Circuit Based on MOS Technology, 微电子学, 2019, 第 3 作者
(45) A probabilistic analysis technique for single event transient sensitivity evaluation of phase-lock-loops, MICROELECTRONICS RELIABILITY, 2019, 第 6 作者
(46) Total ionizing dose effects on graphene-based charge-trapping memory, Science China Information Sciences,, 2019, 第 4 作者
(47) Comparison of the Total Dose Responses of Fully Depleted SOI nMOSFETs With Different Geometries for the Worst Case Bias Conditions, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 第 7 作者
(48) 55 nm SONOS闪存单元的1/f噪声特性研究, Study on 1/f Noise Characteristics of 55 nm SONOS Flash Memory Cell, 微电子学, 2019, 第 4 作者
(49) Si离子辐照下Al2O3栅介质的漏电机制, Leakage Current Mechanism of Al2O3 Gate Dielectric Under Si Ion Irradiation, 半导体技术, 2019, 第 5 作者
(50) Influence of curvature induced stress on first principle calculation and the reliability of 4H-SiC (0001) thermally grown SiO2 gate oxide, MICROELECTRONICS RELIABILITY, 2019, 第 3 作者
(51) Si离子辐照下Al2O栅3介质的漏电机制, 半导体技术, 2019, 第 1 作者
(52) 55 nm硅-氧化硅-氮化硅-氧化硅-硅闪存单元的γ射线和X射线电离总剂量效应研究, Total ionizing dose effects of γ and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell, 物理学报, 2019, 第 5 作者
(53) Comparison of 10 MeV electron beam radiation effect on InGaN/GaN and GaN/AlGaN multiple quantum wells, JOURNAL OF LUMINESCENCE, 2019, 第 2 作者
(54) Total ionizing dose effects on graphene-based charge-trapping memory, SCIENCE CHINA-INFORMATION SCIENCES, 2019, 第 4 作者
(55) XCR4C: A rad-hard full-function CDS ASIC for X-ray CCD Applications, 2018 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE PROCEEDINGS (NSS/MIC), 2018, 
(56) Studies of radiation effects in Al2O3-based MOS structures induced by Si heavy ions, Journal of Applied Physics, 2018, 通讯作者
(57) A Base Resistance Controlled Thyristor with N-type Buried Layer to Suppress the Snapback Phenomenon, 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, 
(58) Correlation between the Decoupling Capacitor Layouts and Single-Event-Upset Resistances of SRAM cells, 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, 
(59) Single-event burnout hardening of planar power MOSFET with partially widened trench source, Single-event burnout hardening of planar power MOSFET with partially widened trench source, 半导体学报:英文版, 2018, 第 5 作者
(60) Single-event burnout hardening of planar power MOSFET with partially widened trench source, Single-event burnout hardening of planar power MOSFET with partially widened trench source, JOURNAL OF SEMICONDUCTORS, 2018, 第 5 作者
(61) An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 7 作者
(62) Total dose effect of Al2O3-based metal-oxide-semiconductor structures and its mechanism under gamma-ray irradiation, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 
(63) A Novel Super-Junction Structure to Improve SEB Performance, 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, 
(64) Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes, CHINESE PHYSICS LETTERS, 2018, 第 4 作者
(65) A single event upset tolerant latch design, MICROELECTRONICS RELIABILITY, 2018, 第 9 作者
(66) Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 第 6 作者
(67) Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 5 作者
(68) Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory, MICROELECTRONICS RELIABILITY, 2018, 第 4 作者
(69) Total Ionization Dose Effects on Charge Storage Capability of Al2O3/HfO2/Al2O3-Based Charge Trapping Memory Cell, Total Ionization Dose Effects on Charge Storage Capability of Al2O3/HfO2/Al2O3-Based Charge Trapping Memory Cell, CHINESE PHYSICS LETTERS, 2018, 第 4 作者
(70) 体硅nFinFET总剂量效应三维TCAD仿真研究, Three-dimensional TCAD Simulation Study of the Total Ionizing Dose Effect on Bulk nFinFET, 微电子学与计算机, 2018, 第 2 作者
(71) A new type of magnetism-controllable Mn-based single-molecule magnet, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2018, 第 4 作者
(72) Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 4 作者
(73) Process variation dependence of total ionizing dose effects in bulk nFinFETs, MICROELECTRONICS RELIABILITY, 2018, 
(74) Impact of gamma-ray irradiation on graphene nano-disc non-volatile memory, APPLIED PHYSICS LETTERS, 2018, 
(75) Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes, Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes, 中国物理快报:英文版, 2018, 第 4 作者
(76) Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory, Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory, 中国物理B:英文版, 2018, 第 3 作者
(77) A digital dual-modulation control for single-phase UPS inverters, INTERNATIONAL JOURNAL OF ELECTRONICS, 2018, 通讯作者
(78) Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment, MICROELECTRONICS RELIABILITY, 2018, 
(79) Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory, CHINESE PHYSICS B, 2018, 第 3 作者
(80) 应用于Buck电路的滑模算法研究, Research on Sliding Mode Algorithm for Buck Converter, 微电子学, 2017, 第 2 作者
(81) Total ionizing dose effects and annealing behaviors of HfO_2-based MOS capacitor, Total ionizing dose effects and annealing behaviors of HfO_2-based MOS capacitor, 中国科学:信息科学(英文版), 2017, 第 5 作者
(82) Superjunction nanoscale partially narrow mesa IGBT towards superior performance, CHINESE PHYSICS B, 2017, 第 5 作者
(83) 基于PDSOI的锁相环电路单粒子瞬变敏感性研究, Research on Single-Event Transients Sensitivity in Phase-Locked Loops Based on PDSOI Process, 微电子学与计算机, 2017, 第 4 作者
(84) Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices, CHINESE PHYSICS B, 2017, 第 4 作者
(85) 极端低温下SiGe HBT器件研究进展, 微电子学, 2017, 第 2 作者
(86) Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor, SCIENCE CHINA, 2017, 第 4 作者
(87) Radiation Effects on 1 Mb HfO2-based Resistive Memory, 2017 17TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2017, 
(88) A controllable synthesis of uniform MoS2 monolayers on annealed molybdenum foils, MATERIALS LETTERS, 2017, 第11作者
(89) Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices, Chin. Phys. B, 2017, 第 5 作者
(90) Superjunction nanoscale partially narrow mesa IGBT towards superior performance, Chin. Phys. B, 2017, 第 7 作者
(91) Anomalous Total Dose Response and Room-Temperature Annealing Behavior in Bulk nFinFETs, 2017, 第 10 作者
(92) Radiation Effects on 1 Mb HfO2-based Resistive Memory, RADECS 2017, 2017, 第 1 作者
(93) Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering, Optoelectronics Letters, 2017, 
(94) Total ionizing dose effects and annealing behaviors of HfO_2-based MOS capacitor, SCIENCE CHINA-INFORMATION SCIENCES, 2017, 
(95) Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor, SCIENCE CHINA-INFORMATION SCIENCES, 2017, 第 5 作者
(96) Impact of DSOI back-gate biasing on circuit conducted emission, International Workshop on Electromagnetic compatibility of Integrated Circuits, 2017, 第 3 作者
(97) 基于PDSOI的锁相环电路单粒子瞬变敏感性研究, 微电子学与计算机, 2017, 第 6 作者
(98) Numerical simulation and experiments on mono-polar negative corona discharge applied in nanocomposites, IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2017, 通讯作者
(99) An Effective Method to Compensate TID Induced Degradation on DSOI Structure, 2017, 第 1 作者
(100) Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices, Chinese Physics. B, 2016, 第 2 作者
(101) The Current Observer Design for Buck Converter, 2016, 第 2 作者
(102) Comparison Study of Bulk and SOI CMOS Technologies based Rad-hard ADCs in Space, 2016, 第 5 作者
(103) Effect of cryogenic temperature characteristics on 0.18-mu m silicon-on-insulator devices, CHINESE PHYSICS B, 2016, 第 2 作者
(104) Improved Single-Event Hardness of Trench Power MOSFET with a Widened Split Gate, 2016, 第 5 作者
(105) Improved Single-Event Hardness of Trench Power MOSFET with a Widened Split Gate, 2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2016, 
(106) PDSOI工艺下单粒子瞬态脉冲宽度分析, Analysis of Single-Event Transient pulse width in PDSOI, 太赫兹科学与电子信息学报, 2016, 第 3 作者
(107) 一种基于标准CMOS工艺实现的锁相环电路, Implementation of a PLL based on standard CMOS process, 电子设计工程, 2016, 第 3 作者
(108) The Current Observer Design for Buck Converter, 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, 
(109) Effect of Cryogenic Temperature Characteristic on 0.18μm Silicon-on-insulator Devices, Chinese Physics B, 2016, 第 1 作者
(110) 异步TSPC分频器的激光脉冲实验研究, 第十二届全国抗辐射电子学与电磁脉冲学术交流会, 2015, 第 3 作者
(111) 0.13μm PDSOI工艺下单粒子瞬态脉冲的产生和传播, 第十二届全国抗辐射电子学与电磁脉冲学术交流会, 2015, 第 3 作者
(112) 极端低温下硅基器件和电路特性研究进展, The Effect of Cryogenic Temperature Characteristics on Silicon-Based Devices and Circuits, 微电子学, 2015, 第 3 作者
(113) 锁相环敏感模块的单粒子效应与设计加固, 半导体技术, 2015, 第 2 作者
(114) DC/DC变换器稳定性的分析方法, An Analytical Method for the Stability of DC/DC Converters, 电气工程与自动化:中英文版, 2015, 第 4 作者
(115) Digital Controller Candidate for Point-of-load Synchronous Buck Converter in Tri-mode Mechanism, JOURNAL OF POWER ELECTRONICS, 2014, 第 3 作者
(116) A DIGITAL DIRECT CONTROLLER FOR BUCK CONVERTER, 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014, 
(117) Low Power Digital Alternative to Analog Control of Step-Down Converter, Journal of Low Power Electronics, 2012, 第 1 作者
(118) A Digital Dual-State-Variable Predictive Controller for High Switching Frequency Buck Converter With Improved Sigma-Delta DPWM, IEEE TRANSACTIONS ON INDUSTRIAL INFORMATICS, 2012, 通讯作者
发表著作
(1) 非易失自旋集成电路技术, Spin Transfer Torque (STT) Based Devices, Circuits and Memory, 电子工业出版社, 2019-01, 第 3 作者
(2) 抗辐射集成电路设计, Integrated Circuit Design for Radiation Environments, 国防工业出版社, 2020-12, 第 2 作者
(3) 可靠性物理与工程--失效时间模型 第三版, Reliability Physics and Engineering Time-To-Failure Modeling (Third Edition), 国防工业出版社, 2020-12, 第 2 作者

科研活动

   
科研项目
( 1 ) SOI 工艺带隙基准损伤机理及加固方法研究, 主持, 部委级, 2014-10--2017-12
( 2 ) 20M SRAM 项目, 参与, 国家级, 2016-01--2019-01
( 3 ) 堆叠纳米线围栅器件的辐射损伤机理及在线增强自修复机制研究, 主持, 国家级, 2019-01--2022-12
( 4 ) 新一代抗辐射材料与器件, 主持, 市地级, 2019-01--2020-12
( 5 ) XXX材料、器件与集成电路技术研究, 主持, 国家级, 2019-12--2022-12
( 6 ) SOI FinFET新结构器件研究, 主持, 国家级, 2019-06--2020-12
( 7 ) 单总线接口型存储器, 主持, 国家级, 2018-09--2021-09
( 8 ) 纳米级半导体器件的综合辐射效应研究, 主持, 国家级, 2020-01--2021-12
( 9 ) 新型半导体器件的综合辐射效应研究, 主持, 部委级, 2019-12--2021-12
( 10 ) 晶圆级单晶二维层状半导体材料制备及相关高性能异质结构器件集成, 参与, 部委级, 2019-09--2024-08
( 11 ) 中国科学院青年创新促进会优秀会员, 主持, 部委级, 2021-01--2023-12
( 12 ) 新型SOI工艺器件抗辐射加固及评估技术研究, 主持, 研究所(学校), 2020-07--2022-06
( 13 ) 空间复合应力场下碳纳米管器件特性研究, 参与, 国家级, 2020-01--2022-12
( 14 ) 三维单片集成组合电路软错误研究, 参与, 部委级, 2020-01--2021-12
( 15 ) 典型器件辐射损伤协同效应仿真技术, 参与, 院级, 2020-01--2021-12
参与会议
(1)Dependency of Temperature and Back-gate Bias on Single Event Upset Induced by Heavy Ion in a 0.2 μm DSOI CMOS Technology   2021-07-01
(2)Single-event Induced Failure Mode of PWM in DC/DC Converter   2020-10-01
(3) Two-dimensional Electrostatic Potential Model for Total Dose Ionization Effects in FOI FinFETs   2020-07-01
(4)An SEU (Single-event Upset) Mitigation Strategy on Read-Write Separation SRAM Cell for Low Power Consumption   2020-06-24
(5)Radiation Effects on the Static and Dynamic Characteristics of 850 nm 10 GHz GaAs Based Vertical Cavity Surface Emitting Lasers   2020-06-18
(6)Generated Quantum Emitters in Hexagonal Boron Nitride via High Energy Ion Irradiation   2020-06-05
(7)Radiation-induced Degradations in FinFET Devices with Hafnium-based Dielectric using Multiple-scale Characterization   2020-04-01
(8)Double-gate SOI: A promising candidate for high reliable microelectronics   2020-03-01
(9)The soft errors in the microelectronic devices for high reliable applications   2019-12-01
(10)Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events   2019-09-01
(11)Impact of Total Ionizing Dose on the Threshold Voltage of FOI FinFET with a Property of Tunable Interface Defects   2019-07-08
(12)Process variation dependence of total ionizing dose effects in bulk nFinFETs   2018-10-01
(13)堆叠纳米线围栅器件的辐射与自加热协同效应仿真研究   第三届全国辐射物理学术交流会CRPS2018   2018-07-21
(14)The dependence of single event effect on heavy ion angular irradiation by Geant4 simulation   2018-05-17
(15)Anomalous Total Dose Response and Room-Temperature Annealing Behavior in Bulk nFinFETs   2017-10-02
(16)An Effective Method to Compensate TID Induced Degradation on DSOI Structure   2017-10-01
(17)The current observer design for buck converter   2016-09-28
(18)An SEE Prognostic Cell Embedded Rad-hard Digital Controller for Next Generation DC-DC Converter in Space   2015-07-09
(19)A Digital Direct Controller for Buck Converter   2014-10-08
(20)An FPGA Prototype of Current and Voltage Predictive Controller for High Switching Frequency Buck Converter   2012-10-25
(21)MASH Δ-Σ DPWM Based Sliding-mode Controller Dedicating to High Frequency SMPS   2011-08-30
(22)Design and Implementation of the Digital Controller for Boost Converter based on FPGA   2011-06-27

指导学生

已指导学生

高鹤  硕士研究生  085208-电子与通信工程  

郎丰涛  硕士研究生  085208-电子与通信工程  

张悦  硕士研究生  085208-电子与通信工程  

丁皓南  硕士研究生  085209-集成电路工程  

王振伟  硕士研究生  085209-集成电路工程  

王治安  硕士研究生  085209-集成电路工程  

现指导学生

赵天伟  硕士研究生  085209-集成电路工程  

李昱辰  硕士研究生  085209-集成电路工程  

王昱冲  硕士研究生  080903-微电子学与固体电子学  

陈天乐  硕士研究生  080903-微电子学与固体电子学  

张心铭  硕士研究生  085400-电子信息  

罗泽坤  硕士研究生  085400-电子信息