基本信息

魏珂  男  博导  中国科学院微电子研究所
电子邮件: weike@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号
邮政编码: 100029

研究领域

长期从事化合物微波器件与电路研究 

招生信息

   
招生专业
080903-微电子学与固体电子学
085400-电子信息
招生方向
射频、微波器件与电路集成技术
微细加工

教育背景

2012-09--2018-06   中科院微电子所   博士
1992-09--1996-07   南开大学   学士
学历

南开大学 --19960704 本科

中国科学院大学 2012-2016 博士

学位

-- 博士

工作经历

   
社会兼职
2021-06-28-今,《JOURNAL OF SCIENCE advanced materials and devices》, 审稿人
2019-07-31-今,《International journal of Rf and microwave computer-aided engineering》, 审稿人
2019-02-01-今,《MATERIAL SCIENCE IN SEMICONDUCTOR POCRSSING》》, 审稿人
2018-12-31-今,《MICROEKECTRONICS RELIABILITY 》, 审稿人
2017-01-01-今,《中国物理》审稿人,
2017-01-01-今,《半导体学报》审稿人,

专利与奖励

   
奖励信息
(1) 北京市科技进步一等奖, 一等奖, 省级, 2004
专利成果
( 1 ) 一种提高AlGaN/GaN HEMT频率特性的方法 , 发明专利, 2011, 第 2 作者, 专利号: 201010217196.10

( 2 ) 控制背孔剖面形状的方法 , 发明专利, 2010, 第 1 作者, 专利号: 201010520274.50

( 3 ) 一种提高GaN HEMT栅槽刻蚀可重复性的方法 , 发明专利, 2010, 第 2 作者, 专利号: 201010227180.90

( 4 ) 控制背孔剖面形状的方法 , 发明专利, 2010, 第 1 作者, 专利号: 201010520271.10

( 5 ) 一种利用尺寸效应监控栅槽刻蚀的方法 , 发明专利, 2010, 第 1 作者, 专利号: 201010574009.5

出版信息

   
发表论文
[1] Zhang, Sheng, Liu, Xinyu, Wei, Ke, Huang, Sen, Chen, Xiaojuan, Zhang, Yichuan, Zheng, Yingkui, Liu, Guoguo, Yuan, Tingting, Wang, Xinhua, Yin, Haibo, Yao, Yao, Niu, Jiebin. Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(1): 49-52, https://www.webofscience.com/wos/woscc/full-record/WOS:000603033200005.
[2] Zhang, S, Wei, K, Zhang, Y C, Chen, X J, Huang, S, Yin, H B, Liu, G G, Yuan, T T, Zheng, Y K, Wang, X H, Liu, X Y. Well-suppressed interface states and improved transport properties of AlGaN/GaN MIS-HEMTs with PEALD SiN gate dielectric. VACUUM[J]. 2021, 191: http://dx.doi.org/10.1016/j.vacuum.2021.110359.
[3] Zhang, Sheng, Wei, Ke, Zhang, Yichuan, Chen, Xiaojuan, Huang, Sen, Liu, Guoguo, Zheng, Yingkui, Yuan, Tingting, Wang, Xinhua, Li, Yankui, Niu, Jiebin, Liu, Xinyu. 7.05 W/mm Power Density Millimeter-Wave GaN MIS-HEMT With Plasma Enhanced Atomic Layer Deposition SiN Dielectric Layer. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 42(10): 1436-1439, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000701249800010.
[4] Zhang, Sheng, Liu, Xinyu, Wei, Ke, Huang, Sen, Chen, Xiaojuan, Zhang, Yichuan, Zheng, Yingkui, Liu, Guoguo, Yuan, Tingting, Wang, Xinhua, Yin, Haibo, Yao, Yao, Niu, Jiebin. Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(1): 49-52, https://www.webofscience.com/wos/woscc/full-record/WOS:000603033200005.
[5] Zhang, S, Wei, K, Zhang, Y C, Chen, X J, Huang, S, Yin, H B, Liu, G G, Yuan, T T, Zheng, Y K, Wang, X H, Liu, X Y. Well-suppressed interface states and improved transport properties of AlGaN/GaN MIS-HEMTs with PEALD SiN gate dielectric. VACUUM[J]. 2021, 191: http://dx.doi.org/10.1016/j.vacuum.2021.110359.
[6] Zhang, Sheng, Wei, Ke, Zhang, Yichuan, Chen, Xiaojuan, Huang, Sen, Liu, Guoguo, Zheng, Yingkui, Yuan, Tingting, Wang, Xinhua, Li, Yankui, Niu, Jiebin, Liu, Xinyu. 7.05 W/mm Power Density Millimeter-Wave GaN MIS-HEMT With Plasma Enhanced Atomic Layer Deposition SiN Dielectric Layer. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 42(10): 1436-1439, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000701249800010.
[7] Zhang, Yichuan, Huang, Sen, Wei, Ke, Zhang, Sheng, Wang, Xinhua, Zheng, Yingkui, Liu, Guoguo, Chen, Xiaojuan, Li, Yankui, Liu, Xinyu. Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 41(5): 701-704, https://www.webofscience.com/wos/woscc/full-record/WOS:000530387100012.
[8] 张一川, 魏珂. 使用原子层刻蚀GaN 毫米波器件. IEEE ELECTRON DEVICE LETTERS[J]. 2020, [9] Zhang, Yichuan, Huang, Sen, Wei, Ke, Zhang, Sheng, Wang, Xinhua, Zheng, Yingkui, Liu, Guoguo, Chen, Xiaojuan, Li, Yankui, Liu, Xinyu. Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 41(5): 701-704, https://www.webofscience.com/wos/woscc/full-record/WOS:000530387100012.
[10] 张一川, 魏珂. 使用原子层刻蚀GaN 毫米波器件. IEEE ELECTRON DEVICE LETTERS[J]. 2020, [11] Zhang, Sheng, Wei, Ke, Ma, XiaoHua, Hou, Bin, Liu, GuoGuo, Zhang, Yichuan, Wang, XinHua, Zheng, YingKui, Huang, Sen, Li, YanKui, Lei, TianMin, Liu, XinYu. Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer. APPLIED PHYSICS LETTERS[J]. 2019, 114(1): [12] Zhang, Sheng, Wei, Ke, Ma, Xiaohua, Zhang, Yi Chuan, Lei, Tianmin. Millimeter-wave AlGaN/GaN HEMT breakdown voltage enhancement by a recessed float field plate. APPLIED PHYSICS EXPRESS[J]. 2019, 12(5): [13] 张昇, 魏珂. 降低肖特基反向漏电的3nm/40nm SiN 钝化层技术. Appl. Phys. Lett[J]. 2019, [14] Zhang, Sheng, Wei, Ke, Ma, XiaoHua, Hou, Bin, Liu, GuoGuo, Zhang, Yichuan, Wang, XinHua, Zheng, YingKui, Huang, Sen, Li, YanKui, Lei, TianMin, Liu, XinYu. Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer. APPLIED PHYSICS LETTERS[J]. 2019, 114(1): [15] Zhang, Sheng, Wei, Ke, Ma, Xiaohua, Zhang, Yi Chuan, Lei, Tianmin. Millimeter-wave AlGaN/GaN HEMT breakdown voltage enhancement by a recessed float field plate. APPLIED PHYSICS EXPRESS[J]. 2019, 12(5): [16] 张昇, 魏珂. 降低肖特基反向漏电的3nm/40nm SiN 钝化层技术. Appl. Phys. Lett[J]. 2019, [17] 张昇, 魏珂. 钝化层SiN:HX对氮化镓反向栅极漏电流的影响. Chin. Phys. B[J]. 2018, [18] 肖洋, 张一川, 张昇, 郑英奎, 雷天民, 魏珂. AlGaN/GaN HEMT凹栅槽结构器件的频率特性. 半导体技术[J]. 2018, 43(6): 432-436,467, http://lib.cqvip.com/Qikan/Article/Detail?id=675451053.
[19] Zhang Sheng, Wei Ke, Xiao Yang, Ma Xiaohua, Zhang Yichuan, Liu Guoguo, Lei Tianmin, Zheng Yingkui, Huang Sen, Wang Ning, Muhammad, Asif, Liu Xinyu. Effect of SiN:Hx passivation layer on the reverse gate leakage current in GaN HEMTs. 中国物理B:英文版. 2018, 27(9): 540-544, http://lib.cqvip.com/Qikan/Article/Detail?id=676284850.
[20] Liu, Xinyu, Wang, Xinhua, Zhang, Yange, Wei, Ke, Zheng, Yingkui, Kang, Xuanwu, Jiang, Haojie, Li, Junfeng, Wang, Wenwu, Wu, Xuebang, Wang, Xianping, Huang, Sen. Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES[J]. 2018, 10(25): 21721-21729, http://dx.doi.org/10.1021/acsami.8b04694.
[21] Zhang, Yichuan, Wei, Ke, Huang, Sen, Wang, Xinhua, Zheng, Yingkui, Liu, Guoguo, Chen, Xiaojuan, Li, Yankui, Liu, Xinyu. High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(5): 727-730, https://www.webofscience.com/wos/woscc/full-record/WOS:000432990700021.
[22] Zhang, Sheng, Wei, Ke, Xiao, Yang, Ma, XiaoHua, Zhang, Chuan, Liu, GuoGuo, Lei, TianMin, Zheng, YingKui, Huang, Sen, Wang, Ning, Asif, Muhammad, Liu, XinYu. Effect of SiN:H-x passivation layer on the reverse gate leakage current in GaN HEMTs. CHINESE PHYSICS B[J]. 2018, 27(9): http://lib.cqvip.com/Qikan/Article/Detail?id=676284850.
[23] xiaoyang, 魏珂. lGaN/GaN HEMT凹栅槽结构器件频率特性的研究. 半导体技术[J]. 2018, [24] 张昇, 魏珂. 钝化层SiN:HX对氮化镓反向栅极漏电流的影响. Chin. Phys. B[J]. 2018, [25] 肖洋, 张一川, 张昇, 郑英奎, 雷天民, 魏珂. AlGaN/GaN HEMT凹栅槽结构器件的频率特性. 半导体技术[J]. 2018, 43(6): 432-436,467, http://lib.cqvip.com/Qikan/Article/Detail?id=675451053.
[26] Zhang Sheng, Wei Ke, Xiao Yang, Ma Xiaohua, Zhang Yichuan, Liu Guoguo, Lei Tianmin, Zheng Yingkui, Huang Sen, Wang Ning, Muhammad, Asif, Liu Xinyu. Effect of SiN:Hx passivation layer on the reverse gate leakage current in GaN HEMTs. 中国物理B:英文版. 2018, 27(9): 540-544, http://lib.cqvip.com/Qikan/Article/Detail?id=676284850.
[27] Liu, Xinyu, Wang, Xinhua, Zhang, Yange, Wei, Ke, Zheng, Yingkui, Kang, Xuanwu, Jiang, Haojie, Li, Junfeng, Wang, Wenwu, Wu, Xuebang, Wang, Xianping, Huang, Sen. Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES[J]. 2018, 10(25): 21721-21729, http://dx.doi.org/10.1021/acsami.8b04694.
[28] Zhang, Yichuan, Wei, Ke, Huang, Sen, Wang, Xinhua, Zheng, Yingkui, Liu, Guoguo, Chen, Xiaojuan, Li, Yankui, Liu, Xinyu. High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(5): 727-730, https://www.webofscience.com/wos/woscc/full-record/WOS:000432990700021.
[29] Zhang, Sheng, Wei, Ke, Xiao, Yang, Ma, XiaoHua, Zhang, Chuan, Liu, GuoGuo, Lei, TianMin, Zheng, YingKui, Huang, Sen, Wang, Ning, Asif, Muhammad, Liu, XinYu. Effect of SiN:H-x passivation layer on the reverse gate leakage current in GaN HEMTs. CHINESE PHYSICS B[J]. 2018, 27(9): http://lib.cqvip.com/Qikan/Article/Detail?id=676284850.
[30] xiaoyang, 魏珂. lGaN/GaN HEMT凹栅槽结构器件频率特性的研究. 半导体技术[J]. 2018, [31] 陈诗哲, 魏珂, 张一川, 郑英奎, 肖洋, 张宗敬, 王泽卫, 刘新宇. 基于Recess欧姆接触结构的AlGaN/GaN HEMT器件研究. 半导体技术[J]. 2017, http://159.226.55.106/handle/172511/18019.
[32] 陈诗哲, 霍荡荡, 郑英奎, 李培咸, 刘新宇, 魏珂. 基于AlGaN/GaN HEMT的源漏整体刻蚀欧姆接触结构. 半导体技术[J]. 2017, 42(7): 521-525,550, [33] 黄森, 魏珂, 章晋汉, 康玄武, 王鑫华. Investigation of current collapse mechanism of LPCVD Si3N4 passivated AlGaN/GaN HEMTs by fast soft-switched current-DLTS and CC-DLTFS. Power Semiconductor Devices and IC's (ISPSD)null. 2017, http://159.226.55.106/handle/172511/18240.
[34] 魏珂, 郑英奎, 樊捷, 袁婷婷, 刘果果, 陈晓娟, 黄森, 王鑫华. 基于BCl3/Cl2/Ar气体的ICP刻蚀技术对于GaN HEMT器件肖特基性能的改进. 第二届全国宽禁带半导体学术会议null. 2017, http://159.226.55.106/handle/172511/18246.
[35] 魏珂, 刘果果, 陈晓娟, 王鑫华, 黄森. N2 plasma treatment for gate leakage reduction in AlGaN/GaN HEMT. 12th International Conference on Nitride Semiconductorsnull. 2017, http://159.226.55.106/handle/172511/18243.
[36] 张昇, 肖洋, 郑英奎, 魏珂, 张一川. GaN基HEMT钝化前表面处理优化. 第二届全国宽禁带半导体学术会议null. 2017, http://159.226.55.106/handle/172511/18247.
[37] 陈诗哲, 魏珂, 张一川, 郑英奎, 肖洋, 张宗敬, 王泽卫, 刘新宇. 基于Recess欧姆接触结构的AlGaN/GaN HEMT器件研究. 半导体技术[J]. 2017, http://159.226.55.106/handle/172511/18019.
[38] 陈诗哲, 霍荡荡, 郑英奎, 李培咸, 刘新宇, 魏珂. 基于AlGaN/GaN HEMT的源漏整体刻蚀欧姆接触结构. 半导体技术[J]. 2017, 42(7): 521-525,550, [39] 黄森, 魏珂, 章晋汉, 康玄武, 王鑫华. Investigation of current collapse mechanism of LPCVD Si3N4 passivated AlGaN/GaN HEMTs by fast soft-switched current-DLTS and CC-DLTFS. Power Semiconductor Devices and IC's (ISPSD)null. 2017, http://159.226.55.106/handle/172511/18240.
[40] 魏珂, 刘果果, 陈晓娟, 王鑫华, 黄森. N2 plasma treatment for gate leakage reduction in AlGaN/GaN HEMT. 12th International Conference on Nitride Semiconductorsnull. 2017, http://159.226.55.106/handle/172511/18243.
[41] 魏珂, 郑英奎, 樊捷, 袁婷婷, 刘果果, 陈晓娟, 黄森, 王鑫华. 基于BCl3/Cl2/Ar气体的ICP刻蚀技术对于GaN HEMT器件肖特基性能的改进. 第二届全国宽禁带半导体学术会议null. 2017, http://159.226.55.106/handle/172511/18246.
[42] 张昇, 肖洋, 郑英奎, 魏珂, 张一川. GaN基HEMT钝化前表面处理优化. 第二届全国宽禁带半导体学术会议null. 2017, http://159.226.55.106/handle/172511/18247.
[43] 刘新宇, 侯继强, 武锦, 金智, 魏珂. 超高频、大功率化合物半导体器件与集成技术基础研究立项报告. 科技创新导报. 2016, 13(2): 172-172, http://lib.cqvip.com/Qikan/Article/Detail?id=669329066.
[44] 刘新宇, 侯继强, 武锦, 金智, 魏珂. 超高频、大功率化合物半导体器件与集成技术基础研究立项报告. 科技创新导报. 2016, 13(2): 172-172, http://lib.cqvip.com/Qikan/Article/Detail?id=669329066.
[45] Zhang Sheng, Wei Ke, Yu Le, Liu GuoGuo, Huang Sen, Wang XinHua, Pang Lei, Zheng YingKui, Li YanKui, Ma XiaoHua, Sun Bing, Liu XinYu. AlGaN/GaN high electron mobility transistor with Al2O3+BCB passivation. CHINESE PHYSICS B[J]. 2015, 24(11): http://159.226.55.106/handle/172511/16067.
[46] Wang, Xinhua, Huang, Sen, Zheng, Yingkui, Wei, Ke, Chen, Xiaojuan, Liu, Guoguo, Yuan, Tingting, Luo, Weijun, Pang, Lei, Jiang, Haojie, Li, Junfeng, Zhao, Chao, Zhang, Haoxiang, Liu, Xinyu. Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(7): 666-668, http://www.irgrid.ac.cn/handle/1471x/1089137.
[47] Huang, Sen, Liu, Xinyu, Zhang, Jinhan, Wei, Ke, Liu, Guoguo, Wang, Xinhua, Zheng, Yingkui, Liu, Honggang, Jin, Zhi, Zhao, Chao, Liu, Cheng, Liu, Shenghou, Yang, Shu, Zhang, Jincheng, Hao, Yue, Chen, Kevin J. High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(8): 754-756, http://10.10.10.126/handle/311049/14969.
[48] Huang, Sen, Liu, Xinyu, Wei, Ke, Liu, Guoguo, Wang, Xinhua, Sun, Bing, Yang, Xuelin, Shen, Bo, Liu, Cheng, Liu, Shenghou, Hua, Mengyuan, Yang, Shu, Chen, Kevin J. O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors. APPLIED PHYSICS LETTERS[J]. 2015, 106(3): http://www.irgrid.ac.cn/handle/1471x/1089122.
[49] Zhang Sheng, Wei Ke, Yu Le, Liu GuoGuo, Huang Sen, Wang XinHua, Pang Lei, Zheng YingKui, Li YanKui, Ma XiaoHua, Sun Bing, Liu XinYu. AlGaN/GaN high electron mobility transistor with Al2O3+BCB passivation. CHINESE PHYSICS B[J]. 2015, 24(11): http://159.226.55.106/handle/172511/16067.
[50] Wang, Xinhua, Huang, Sen, Zheng, Yingkui, Wei, Ke, Chen, Xiaojuan, Liu, Guoguo, Yuan, Tingting, Luo, Weijun, Pang, Lei, Jiang, Haojie, Li, Junfeng, Zhao, Chao, Zhang, Haoxiang, Liu, Xinyu. Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(7): 666-668, http://www.irgrid.ac.cn/handle/1471x/1089137.
[51] Huang, Sen, Liu, Xinyu, Zhang, Jinhan, Wei, Ke, Liu, Guoguo, Wang, Xinhua, Zheng, Yingkui, Liu, Honggang, Jin, Zhi, Zhao, Chao, Liu, Cheng, Liu, Shenghou, Yang, Shu, Zhang, Jincheng, Hao, Yue, Chen, Kevin J. High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(8): 754-756, http://10.10.10.126/handle/311049/14969.
[52] Huang, Sen, Liu, Xinyu, Wei, Ke, Liu, Guoguo, Wang, Xinhua, Sun, Bing, Yang, Xuelin, Shen, Bo, Liu, Cheng, Liu, Shenghou, Hua, Mengyuan, Yang, Shu, Chen, Kevin J. O-3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors. APPLIED PHYSICS LETTERS[J]. 2015, 106(3): http://www.irgrid.ac.cn/handle/1471x/1089122.
[53] Huang, Sen, Wei, Ke, Liu, Guoguo, Zheng, Yingkui, Wang, Xinhua, Pang, Lei, Kong, Xin, Liu, Xinyu, Tang, Zhikai, Yang, Shu, Jiang, Qimeng, Chen, Kevin J. High-f(MAX) High Johnson's Figure-of-Merit 0.2-mu m Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiNx Passivation. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(3): 315-317, https://www.webofscience.com/wos/woscc/full-record/WOS:000332029200008.
[54] Xu, Weizong, Fu, Lihua, Lu, Hai, Chen, Dunjun, Ren, Fangfang, Zhang, Rong, Zheng, Youdou, Wei, Ke, Liu, Xinyu. Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors. MICROELECTRONICS RELIABILITY[J]. 2014, 54(11): 2406-2409, http://dx.doi.org/10.1016/j.microrel.2014.06.005.
[55] Lin Fang, Shen Bo, Lu LiWu, Xu FuJun, Liu XinYu, Wei Ke. Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures. CHINESE PHYSICS B[J]. 2014, 23(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000335646100070.
[56] Huang, Sen, Wei, Ke, Liu, Guoguo, Zheng, Yingkui, Wang, Xinhua, Pang, Lei, Kong, Xin, Liu, Xinyu, Tang, Zhikai, Yang, Shu, Jiang, Qimeng, Chen, Kevin J. High-f(MAX) High Johnson's Figure-of-Merit 0.2-mu m Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiNx Passivation. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(3): 315-317, https://www.webofscience.com/wos/woscc/full-record/WOS:000332029200008.
[57] Xu, Weizong, Fu, Lihua, Lu, Hai, Chen, Dunjun, Ren, Fangfang, Zhang, Rong, Zheng, Youdou, Wei, Ke, Liu, Xinyu. Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors. MICROELECTRONICS RELIABILITY[J]. 2014, 54(11): 2406-2409, http://dx.doi.org/10.1016/j.microrel.2014.06.005.
[58] Lin Fang, Shen Bo, Lu LiWu, Xu FuJun, Liu XinYu, Wei Ke. Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures. CHINESE PHYSICS B[J]. 2014, 23(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000335646100070.
[59] Huang, Sen, Wei, Ke, Tang, Zhikai, Yang, Shu, Liu, Cheng, Guo, Lei, Shen, Bo, Zhang, Jinhan, Kong, Xin, Liu, Guoguo, Zheng, Yingkui, Liu, Xinyu, Chen, Kevin J. Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AIN passivation. JOURNAL OF APPLIED PHYSICS[J]. 2013, 114(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000325780400062.
[60] Kong, Xin, Wei, Ke, Liu, Guoguo, Liu, Xinyu, Wang, Cuimei, Wang, Xiaoliang. Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier. APPLIED PHYSICS EXPRESS[J]. 2013, 6(5): http://www.irgrid.ac.cn/handle/1471x/1089064.
[61] Huang, Sen, Wei, Ke, Tang, Zhikai, Yang, Shu, Liu, Cheng, Guo, Lei, Shen, Bo, Zhang, Jinhan, Kong, Xin, Liu, Guoguo, Zheng, Yingkui, Liu, Xinyu, Chen, Kevin J. Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AIN passivation. JOURNAL OF APPLIED PHYSICS[J]. 2013, 114(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000325780400062.
[62] Kong, Xin, Wei, Ke, Liu, Guoguo, Liu, Xinyu, Wang, Cuimei, Wang, Xiaoliang. Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier. APPLIED PHYSICS EXPRESS[J]. 2013, 6(5): http://www.irgrid.ac.cn/handle/1471x/1089064.
[63] Fu LiHua, Lu Hai, Chen DunJun, Zhang Rong, Zheng YouDou, Wei Ke, Liu XinYu. High-field-induced electron detrapping in an AlGaN/GaN high electron mobility transistor. CHINESE PHYSICS B[J]. 2012, 21(10): http://lib.cqvip.com/Qikan/Article/Detail?id=43409969.
[64] Kong, Xin, Wei, Ke, Liu, Guoguo, Liu, Xinyu. Role of Ti/Al relative thickness in the formation mechanism of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2012, 45(26): https://www.webofscience.com/wos/woscc/full-record/WOS:000305418900003.
[65] Kong Xin, Wei Ke, Liu GuoGuo, Liu XinYu. Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application. CHINESE PHYSICS B[J]. 2012, 21(12): http://10.10.10.126/handle/311049/11549.
[66] 孔欣, 魏珂, 刘果果, 刘新宇. Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates. CHINESE PHYSICS LETTERS[J]. 2012, 29(7): 280-283, https://www.webofscience.com/wos/woscc/full-record/WOS:000306551200073.
[67] Fu LiHua, Lu Hai, Chen DunJun, Zhang Rong, Zheng YouDou, Wei Ke, Liu XinYu. High-field-induced electron detrapping in an AlGaN/GaN high electron mobility transistor. CHINESE PHYSICS B[J]. 2012, 21(10): http://lib.cqvip.com/Qikan/Article/Detail?id=43409969.
[68] Kong, Xin, Wei, Ke, Liu, Guoguo, Liu, Xinyu. Role of Ti/Al relative thickness in the formation mechanism of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2012, 45(26): https://www.webofscience.com/wos/woscc/full-record/WOS:000305418900003.
[69] Kong Xin, Wei Ke, Liu GuoGuo, Liu XinYu. Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application. CHINESE PHYSICS B[J]. 2012, 21(12): http://10.10.10.126/handle/311049/11549.
[70] 孔欣, 魏珂, 刘果果, 刘新宇. Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates. CHINESE PHYSICS LETTERS[J]. 2012, 29(7): 280-283, https://www.webofscience.com/wos/woscc/full-record/WOS:000306551200073.
[71] Lin Fang, Shen Bo, Lu LiWu, Liu XinYu, Wei Ke, Xu FuJun, Wang Yan, Ma Nan, Huang Jun. Identification and elimination of inductively coupled plasma-induced defects in AlxGa1-xN/GaN heterostructures. CHINESE PHYSICS B[J]. 2011, 20(7): http://lib.cqvip.com/Qikan/Article/Detail?id=38605309.
[72] Liu GuoGuo, Wei Ke, Huang Jun, Liu XinYu, Niu JieBin. AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2011, 30(4): 289-292, https://www.webofscience.com/wos/woscc/full-record/WOS:000294932900001.
[73] Wang DongFang, Yuan TingTing, Wei Ke, Liu XinYu, Liu GuoGuo. Design and implementation of Ka-band AlGaN/GaN HEMTs. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2011, 30(3): 255-259, https://www.webofscience.com/wos/woscc/full-record/WOS:000292578800015.
[74] LiuXinYu, Wei Ke, Xu FuJun, WangYan, Ma Nan, Huang Jun, Lin Fang, Shen Bo, Lu LiWu. Identification and elimination of inductively coupled plasma-induced defects in AlxGal-xN/GaN heterostructures. Chinese Physics. B[J]. 2011, 20(7): 077303-1, [75] 王东方, 袁婷婷, 魏珂, 刘新宇, 刘果果. Ka波段AlGaN/GaN HEMT的研制. 红外与毫米波学报[J]. 2011, 30(3): 255-259, http://lib.cqvip.com/Qikan/Article/Detail?id=38258517.
[76] 魏珂. InGaN背势垒的fmax 达到200GHz GaN HEMT 器件. 微波与红外学报. 2011, [77] Lin Fang, Shen Bo, Lu LiWu, Liu XinYu, Wei Ke, Xu FuJun, Wang Yan, Ma Nan, Huang Jun. Identification and elimination of inductively coupled plasma-induced defects in AlxGa1-xN/GaN heterostructures. CHINESE PHYSICS B[J]. 2011, 20(7): http://lib.cqvip.com/Qikan/Article/Detail?id=38605309.
[78] Liu GuoGuo, Wei Ke, Huang Jun, Liu XinYu, Niu JieBin. AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2011, 30(4): 289-292, https://www.webofscience.com/wos/woscc/full-record/WOS:000294932900001.
[79] Wang DongFang, Yuan TingTing, Wei Ke, Liu XinYu, Liu GuoGuo. Design and implementation of Ka-band AlGaN/GaN HEMTs. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2011, 30(3): 255-259, https://www.webofscience.com/wos/woscc/full-record/WOS:000292578800015.
[80] LiuXinYu, Wei Ke, Xu FuJun, WangYan, Ma Nan, Huang Jun, Lin Fang, Shen Bo, Lu LiWu. Identification and elimination of inductively coupled plasma-induced defects in AlxGal-xN/GaN heterostructures. Chinese Physics. B[J]. 2011, 20(7): 077303-1, [81] 王东方, 袁婷婷, 魏珂, 刘新宇, 刘果果. Ka波段AlGaN/GaN HEMT的研制. 红外与毫米波学报[J]. 2011, 30(3): 255-259, http://lib.cqvip.com/Qikan/Article/Detail?id=38258517.
[82] 魏珂. InGaN背势垒的fmax 达到200GHz GaN HEMT 器件. 微波与红外学报. 2011, [83] 王东方, 魏珂, 袁婷婷, 刘新宇. High performance AIGaN/GaN HEMTs with 2.4 μm source-drain spacing. 半导体学报. 2010, 38-40, http://lib.cqvip.com/Qikan/Article/Detail?id=33148336.
[84] Lin Fang, Shen Bo, Lu LiWu, Ma Nan, Xu FuJun, Miao ZhenLin, Song Jie, Liu XinYu, Wei Ke, Huang Jun. Performance comparison of Pt/Au and Ni/Au Schottky contacts on AlxGa1-x N/GaN heterostructures at high temperatures. CHINESE PHYSICS B[J]. 2010, 19(12): http://lib.cqvip.com/Qikan/Article/Detail?id=36050956.
[85] Wang XinHua, Zhao Miao, Liu XinYu, Pu Yan, Zheng YingKui, Wei Ke. The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors. CHINESE PHYSICS B[J]. 2010, 19(9): http://lib.cqvip.com/Qikan/Article/Detail?id=34966796.
[86] Wang Dongfang, Wei Ke, Yuan Tingting, Liu Xinyu. High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing. Journal of Semiconductors[J]. 2010, 31(3): 38-40, [87] Lin Fang, Shen Bo, Lu Liwu, Ma Nan, Xu Fujun, Miao Zhenlin, Song Jie, Liu Xinyu, Wei Ke, Huang Jun. Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al_xGa_(l-x) N/GaN heterostructures at high temperatures. Chinese Physics. B[J]. 2010, 19(12): 127304-1, [88] Zhao, Miao, Wang, Xinhua, Liu, Xinyu, Huang, Jun, Zheng, Yingkui, Wei, Ke. Thermal Storage of AlGaN/GaN High-Electron-Mobility Transistors. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY[J]. 2010, 10(3): 360-365, https://www.webofscience.com/wos/woscc/full-record/WOS:000283356600008.
[89] 王东方, 魏珂, 袁婷婷, 刘新宇. High performance AIGaN/GaN HEMTs with 2.4 μm source-drain spacing. 半导体学报. 2010, 38-40, http://lib.cqvip.com/Qikan/Article/Detail?id=33148336.
[90] Lin Fang, Shen Bo, Lu LiWu, Ma Nan, Xu FuJun, Miao ZhenLin, Song Jie, Liu XinYu, Wei Ke, Huang Jun. Performance comparison of Pt/Au and Ni/Au Schottky contacts on AlxGa1-x N/GaN heterostructures at high temperatures. CHINESE PHYSICS B[J]. 2010, 19(12): http://lib.cqvip.com/Qikan/Article/Detail?id=36050956.
[91] Wang XinHua, Zhao Miao, Liu XinYu, Pu Yan, Zheng YingKui, Wei Ke. The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors. CHINESE PHYSICS B[J]. 2010, 19(9): http://lib.cqvip.com/Qikan/Article/Detail?id=34966796.
[92] Wang Dongfang, Wei Ke, Yuan Tingting, Liu Xinyu. High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing. Journal of Semiconductors[J]. 2010, 31(3): 38-40, [93] Lin Fang, Shen Bo, Lu Liwu, Ma Nan, Xu Fujun, Miao Zhenlin, Song Jie, Liu Xinyu, Wei Ke, Huang Jun. Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al_xGa_(l-x) N/GaN heterostructures at high temperatures. Chinese Physics. B[J]. 2010, 19(12): 127304-1, [94] Zhao, Miao, Wang, Xinhua, Liu, Xinyu, Huang, Jun, Zheng, Yingkui, Wei, Ke. Thermal Storage of AlGaN/GaN High-Electron-Mobility Transistors. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY[J]. 2010, 10(3): 360-365, https://www.webofscience.com/wos/woscc/full-record/WOS:000283356600008.
[95] 黄俊, 魏珂, 刘新宇. AlGaN/GaN HEMT栅槽低损伤刻蚀技术. 功能材料与器件学报. 2009, 15(2): 193-196, http://lib.cqvip.com/Qikan/Article/Detail?id=30178293.
[96] 黄俊, 魏珂, 刘新宇. AlGaN/GaN HEMT栅槽低损伤刻蚀技术. 功能材料与器件学报. 2009, 15(2): 193-196, http://lib.cqvip.com/Qikan/Article/Detail?id=30178293.
[97] 刘果果, 魏珂, 郑英奎, 刘新宇, 和致经. AlGaN/GaN HEMTs器件布局对器件性能影响分析. 电子器件. 2008, 31(6): 1769-1771, http://lib.cqvip.com/Qikan/Article/Detail?id=29012571.
[98] 刘果果, 魏珂, 郑英奎, 刘新宇, 和致经. AlGaN/GaN HEMTs器件布局对器件性能影响分析. 电子器件. 2008, 31(6): 1769-1771, http://lib.cqvip.com/Qikan/Article/Detail?id=29012571.

科研活动

   
科研项目
( 1 ) GaN 宽禁带微电子材料和器件重大基础问题研究”, 负责人, 国家任务, 2008-01--2012-12
( 2 ) 新型高频、大功率化合物半导体电子器件研究, 参与, 国家任务, 2010-01--2014-12
( 3 ) GaN基毫米波功率器件与材料基础与关键技术研究, 参与, 国家任务, 2009-01--2013-12
( 4 ) GaN 功率器件与电路, 负责人, 国家任务, 2014-01--2018-12
( 5 ) GaN 器件与电路, 负责人, 国家任务, 2017-01--2020-12
( 6 ) GaN 器件与电路, 负责人, 国家任务, 2010-01--2018-06
( 7 ) GaN放大器, 参与, 中国科学院计划, 2019-09--2021-09
( 8 ) GaN 电路, 负责人, 国家任务, 2022-01--2024-12
参与会议
(1)High Power added efficiency AlGaN/GaN HEMT with ALD/PECVD SiN   国际氮化物大会   2019-07-07
(2)An improved gate-trench by varying etching pressure for AlGaN/GaN HEMT   国际等离子大会   魏珂 等   2018-11-03

指导学生

已指导学生

李佳  硕士研究生  085209-集成电路工程  

闫伟  硕士研究生  085209-集成电路工程  

张尚伟  硕士研究生  085209-集成电路工程  

杜泽浩  硕士研究生  085209-集成电路工程  

现指导学生

王建超  硕士研究生  085400-电子信息  

周爱玲  硕士研究生  085400-电子信息